Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400767
N. Cioateră
Cuspidine-type solid oxides having the compositions La4(Ti2O8)O2 and La4(Ti1.5Al0.5O8-δ)O2 were synthesized using a modified Pechini method at much lower temperature than the one corresponding to the state of the art ceramic method. Their thermal behaviour was evaluated using TG/DSC techniques. Reduction-oxidation processes were evidenced on both heating and cooling stages, their amplitude depending on gas atmosphere and sample composition.
{"title":"Cuspidine-type Solid Oxides for Fuel Cell applications","authors":"N. Cioateră","doi":"10.1109/SMICND.2012.6400767","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400767","url":null,"abstract":"Cuspidine-type solid oxides having the compositions La<sub>4</sub>(Ti<sub>2</sub>O<sub>8</sub>)O<sub>2</sub> and La<sub>4</sub>(Ti<sub>1.5</sub>Al<sub>0.5</sub>O<sub>8-δ</sub>)O<sub>2</sub> were synthesized using a modified Pechini method at much lower temperature than the one corresponding to the state of the art ceramic method. Their thermal behaviour was evaluated using TG/DSC techniques. Reduction-oxidation processes were evidenced on both heating and cooling stages, their amplitude depending on gas atmosphere and sample composition.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"45 2","pages":"341-344"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72604560","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400708
F. Udrea, S. Z. Ali, M. Brezeanu, V. Dumitru, O. Buiu, I. Poenaru, M. F. Chowdhury, A. De Luca, J. Gardner
This paper reviews and addresses certain aspects of Silicon-On-Insulator (SOI) technologies for a harsh environment. The paper first describes the need for specialized sensors in applications such as (i) domestic and other small-scale boilers, (ii) CO2 Capture and Sequestration, (iii) oil & gas storage and transportation, and (iv) automotive. We describe in brief the advantages and special features of SOI technology for sensing applications requiring temperatures in excess of the typical bulk silicon junction temperatures of 150oC. Finally we present the concepts, structures and prototypes of simple and smart micro-hotplate and Infra Red (IR) based emitters for NDIR (Non Dispersive IR) gas sensors in harsh environments.
{"title":"SOI sensing technologies for harsh environment","authors":"F. Udrea, S. Z. Ali, M. Brezeanu, V. Dumitru, O. Buiu, I. Poenaru, M. F. Chowdhury, A. De Luca, J. Gardner","doi":"10.1109/SMICND.2012.6400708","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400708","url":null,"abstract":"This paper reviews and addresses certain aspects of Silicon-On-Insulator (SOI) technologies for a harsh environment. The paper first describes the need for specialized sensors in applications such as (i) domestic and other small-scale boilers, (ii) CO2 Capture and Sequestration, (iii) oil & gas storage and transportation, and (iv) automotive. We describe in brief the advantages and special features of SOI technology for sensing applications requiring temperatures in excess of the typical bulk silicon junction temperatures of 150oC. Finally we present the concepts, structures and prototypes of simple and smart micro-hotplate and Infra Red (IR) based emitters for NDIR (Non Dispersive IR) gas sensors in harsh environments.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"9 1","pages":"3-10"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75908017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400785
M. Koutsoureli, A. Adikimenakis, L. Michalas, E. Papandreou, A. Pantazis, G. Konstantinidis, A. Georgakilas, G. Papaioannou
In the present work the electrical properties of AlN polycrystalline films deposited at low temperatures by plasma-assisted molecular beam epitaxy (PA-MBE) are investigated. The polarization build-up during constant current injection as well as the depolarization process after the current stress have been investigated through monitoring voltage transients in Metal-Insulator-Metal (MIM) capacitors, in temperature range from 300 K to 400 K. Moreover, current-voltage characteristics obtained at different temperatures revealed that charge collection at low fields in these films occurs through variable range hopping.
{"title":"Charging and discharging processes in ALN dielectric films deposited by plasma assisted molecular beam epitaxy","authors":"M. Koutsoureli, A. Adikimenakis, L. Michalas, E. Papandreou, A. Pantazis, G. Konstantinidis, A. Georgakilas, G. Papaioannou","doi":"10.1109/SMICND.2012.6400785","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400785","url":null,"abstract":"In the present work the electrical properties of AlN polycrystalline films deposited at low temperatures by plasma-assisted molecular beam epitaxy (PA-MBE) are investigated. The polarization build-up during constant current injection as well as the depolarization process after the current stress have been investigated through monitoring voltage transients in Metal-Insulator-Metal (MIM) capacitors, in temperature range from 300 K to 400 K. Moreover, current-voltage characteristics obtained at different temperatures revealed that charge collection at low fields in these films occurs through variable range hopping.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"255 1","pages":"281-284"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76187252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400762
L. Di Benedetto, S. Bellone
A model of the potential barrier in the channel of normally-off 4H-SiC JFET's is shown. It allows to evaluate the barrier height and the minority carrier density in the center of the channel for an arbitrary geometry and bias condition. The validity of the model is justified by comparing the model with numerical simulations carried out on various channel topologies.
{"title":"A model of the voltage barrier in the channel of 4H-SiC normally-off JFET's","authors":"L. Di Benedetto, S. Bellone","doi":"10.1109/SMICND.2012.6400762","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400762","url":null,"abstract":"A model of the potential barrier in the channel of normally-off 4H-SiC JFET's is shown. It allows to evaluate the barrier height and the minority carrier density in the center of the channel for an arbitrary geometry and bias condition. The validity of the model is justified by comparing the model with numerical simulations carried out on various channel topologies.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"1 1","pages":"355-358"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82184909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400682
A. Radu, S. Iftimie, D. Dragoman
Electron beams can be steered or collimated after refraction at an interface between an isotropic medium and an isotropic one. In this situation the refraction can be negative or positive as a function of the incidence angle. The materials' parameters influence the steering angle, whereas the energy of the ballistic electrons determines the degree of collimation.
{"title":"Manipulating ballistic electrons by refraction at an interface between isotropic and anisotropic media","authors":"A. Radu, S. Iftimie, D. Dragoman","doi":"10.1109/SMICND.2012.6400682","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400682","url":null,"abstract":"Electron beams can be steered or collimated after refraction at an interface between an isotropic medium and an isotropic one. In this situation the refraction can be negative or positive as a function of the incidence angle. The materials' parameters influence the steering angle, whereas the energy of the ballistic electrons determines the degree of collimation.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"57 1","pages":"113-116"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80491470","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400779
C. Pachiu
The author deal with a two-dimensional phononic structure (PC) composed by a matrix of nylon with cylindrical holes filled with air. The fabrication process is 3D selective laser sintering where a pulsed laser is used to raise a powder at the temperature of diffusion to a solid state. A piezoelectric transducer emits a longitudinal wave and another transducer acts as a receiver, this basic set-up leads to the experimental spectrum of the transmission coefficient in the PC. The results are compared with the numerical dates and dispersion curves (ω, k), the existences of forbidden frequency bands are experimentally shown. The extension of this experimental study into other phononic crystals could lead to new physical phenomena at different scales and novel design of engineering devices.
{"title":"Experimental observations in 2D phononic structure with granular crystals","authors":"C. Pachiu","doi":"10.1109/SMICND.2012.6400779","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400779","url":null,"abstract":"The author deal with a two-dimensional phononic structure (PC) composed by a matrix of nylon with cylindrical holes filled with air. The fabrication process is 3D selective laser sintering where a pulsed laser is used to raise a powder at the temperature of diffusion to a solid state. A piezoelectric transducer emits a longitudinal wave and another transducer acts as a receiver, this basic set-up leads to the experimental spectrum of the transmission coefficient in the PC. The results are compared with the numerical dates and dispersion curves (ω, k), the existences of forbidden frequency bands are experimentally shown. The extension of this experimental study into other phononic crystals could lead to new physical phenomena at different scales and novel design of engineering devices.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"115 1","pages":"299-302"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89315329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400727
A. Bajenaru, L. Radoias, G. Dilimot, G. Brezeanu
This paper presents a detailed analysis of the influence of parasitic substrate diodes on the load transient response of three-terminal adjustable voltage regulators with the substrate connected to the output. Two simple solutions for improving the transient behaviour are then presented. A 1A voltage regulator was implemented in a single metal layer BCD technology. Using no additional chip area, the undershoot has been reduced from 250mV to less than 30mV, for an output voltage of 5V. The duration of the undershoot is accordingly reduced.
{"title":"The influence of parasitic substrate diodes on load transient response of three-terminal adjustable voltage regulators","authors":"A. Bajenaru, L. Radoias, G. Dilimot, G. Brezeanu","doi":"10.1109/SMICND.2012.6400727","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400727","url":null,"abstract":"This paper presents a detailed analysis of the influence of parasitic substrate diodes on the load transient response of three-terminal adjustable voltage regulators with the substrate connected to the output. Two simple solutions for improving the transient behaviour are then presented. A 1A voltage regulator was implemented in a single metal layer BCD technology. Using no additional chip area, the undershoot has been reduced from 250mV to less than 30mV, for an output voltage of 5V. The duration of the undershoot is accordingly reduced.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"76 1","pages":"471-474"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88852735","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400695
M. Gologanu, C. Bostan, V. Avramescu, O. Buiu
Damping effects are very important in MEMS-based sensors and actuators. In this paper we use analytical models and finite element (FE) computations to quantify the energy losses due to viscous fluid damping, acoustic radiation and thermo-elastic damping. To treat the case where squeeze/slide film models can not be applied, we have implemented in a commercial FE package a new incompressible flow solver based on a gauge formulation. We are thus able to solve for full flows around complex 3D geometries in the frequency domain and predict viscous damping of resonant MEMS structures. The full methodology is exemplified on the response of a MEMS silicon resonator, including acoustic driving and piezoelectric sensing.
{"title":"Damping effects in MEMS resonators","authors":"M. Gologanu, C. Bostan, V. Avramescu, O. Buiu","doi":"10.1109/SMICND.2012.6400695","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400695","url":null,"abstract":"Damping effects are very important in MEMS-based sensors and actuators. In this paper we use analytical models and finite element (FE) computations to quantify the energy losses due to viscous fluid damping, acoustic radiation and thermo-elastic damping. To treat the case where squeeze/slide film models can not be applied, we have implemented in a commercial FE package a new incompressible flow solver based on a gauge formulation. We are thus able to solve for full flows around complex 3D geometries in the frequency domain and predict viscous damping of resonant MEMS structures. The full methodology is exemplified on the response of a MEMS silicon resonator, including acoustic driving and piezoelectric sensing.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"39 1","pages":"67-76"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90616846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400770
E. Vasile, S. Mihaiu, R. Plugaru
High spatial and analytical resolution HR SEM-EDX and STEM-EDX microscopy techniques were applied for characterization of thin films transistors (TFT) with ZnO: Al active channel layer. The structure and chemical composition of thin films and their interfaces were investigated at the nanometer scale using cross section samples from TFT devices. We evidenced that cross sectional chemical elements spectra and elemental mapping are very powerful tools for analysis of chemical elements distribution in the films and at the interfaces.
{"title":"Nanoscale analysis of the cross-sectional structure and composition of ZnO: Al active channel layer in thin film transistors","authors":"E. Vasile, S. Mihaiu, R. Plugaru","doi":"10.1109/SMICND.2012.6400770","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400770","url":null,"abstract":"High spatial and analytical resolution HR SEM-EDX and STEM-EDX microscopy techniques were applied for characterization of thin films transistors (TFT) with ZnO: Al active channel layer. The structure and chemical composition of thin films and their interfaces were investigated at the nanometer scale using cross section samples from TFT devices. We evidenced that cross sectional chemical elements spectra and elemental mapping are very powerful tools for analysis of chemical elements distribution in the films and at the interfaces.","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"27 1","pages":"329-332"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76799205","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-10-01DOI: 10.1109/SMICND.2012.6400752
L. Radoias, C. Zegheru, G. Brezeanu
This paper presents a study of the influence of the substrate leakage current on the output voltage of a well-known bandgap architecture with second order compensation. In addition, an analytical approach for the output voltage is provided. The bandgap voltage reference has been successfully implemented in a standard BiCMOS technology on an effective area of 0.07mm2. A low quiescent current of 4μA and a very small variation of the output voltage have been achieved over the whole temperature range by eliminating the effect of the leakage current. Therefore, a variation of 3mV has been measured for the whole operating temperature range (-40°C to 170°C).
{"title":"Substrate leakage current influence on bandgap voltage references in automotive applications","authors":"L. Radoias, C. Zegheru, G. Brezeanu","doi":"10.1109/SMICND.2012.6400752","DOIUrl":"https://doi.org/10.1109/SMICND.2012.6400752","url":null,"abstract":"This paper presents a study of the influence of the substrate leakage current on the output voltage of a well-known bandgap architecture with second order compensation. In addition, an analytical approach for the output voltage is provided. The bandgap voltage reference has been successfully implemented in a standard BiCMOS technology on an effective area of 0.07mm2. A low quiescent current of 4μA and a very small variation of the output voltage have been achieved over the whole temperature range by eliminating the effect of the leakage current. Therefore, a variation of 3mV has been measured for the whole operating temperature range (-40°C to 170°C).","PeriodicalId":9628,"journal":{"name":"CAS 2012 (International Semiconductor Conference)","volume":"78 1","pages":"389-392"},"PeriodicalIF":0.0,"publicationDate":"2012-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91098312","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：