Pub Date : 2024-12-01DOI: 10.1016/j.chip.2024.100116
Xiaoshuai An , Sizhe Gui , Yingxin Li , Zhiqin Chu , Kwai Hei Li
A versatile optoelectronic device with ultrasensitive negative-positive pressure sensing capabilities, which is integrated with a wireless monitoring system, was fabricated and demonstrated in the current work. The device comprises a monolithic GaN chip with a polydimethylsiloxane cavity and nanograting, which effectively transduces pressure stimuli into optical changes detected by the GaN chip. The developed device exhibits an ultra-low detection limit for a mass of 0.03 mg, a pressure of 2.94 Pa, and a water depth of 0.3 mm, with a detection range of −100 kPa to 30.5 kPa and high stability. The versatility of the device is demonstrated by its ability to monitor heart pulse, grip strength, and respiration. Its integration with a wireless data transmission system enables real-time monitoring of human activity and heart rate underwater, making it suitable for precise measurements in various practical applications.
{"title":"A versatile optoelectronic device for ultrasensitive negative-positive pressure sensing applications","authors":"Xiaoshuai An , Sizhe Gui , Yingxin Li , Zhiqin Chu , Kwai Hei Li","doi":"10.1016/j.chip.2024.100116","DOIUrl":"10.1016/j.chip.2024.100116","url":null,"abstract":"<div><div>A versatile optoelectronic device with ultrasensitive negative-positive pressure sensing capabilities, which is integrated with a wireless monitoring system, was fabricated and demonstrated in the current work. The device comprises a monolithic GaN chip with a polydimethylsiloxane cavity and nanograting, which effectively transduces pressure stimuli into optical changes detected by the GaN chip. The developed device exhibits an ultra-low detection limit for a mass of 0.03 mg, a pressure of 2.94 Pa, and a water depth of 0.3 mm, with a detection range of −100 kPa to 30.5 kPa and high stability. The versatility of the device is demonstrated by its ability to monitor heart pulse, grip strength, and respiration. Its integration with a wireless data transmission system enables real-time monitoring of human activity and heart rate underwater, making it suitable for precise measurements in various practical applications.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100116"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129329","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Modern computational technologies are gradually encountering significant limitations, driving a shift toward alternative paradigms such as optical computing. In this study, novel all-optical combinational logic units based on diffractive neural networks (D2NNs) were introduced, which were designed to perform high-order logical operations efficiently and swiftly with the adoption of only two modulation layers. This innovative design exhibits increased processing speed, improved energy efficiency, robust environmental stability, and high error tolerance, making it exceptionally well-suited for a broad spectrum of applications in optical computing and communications. By leveraging the transfer learning, we successfully developed a fifth-order cascaded combinational logic circuit for a practical information transmission system. Furthermore, we revealed a pioneering application of the device in optical time division multiplexing (OTDM), demonstrating its capability to manage high-speed data transfer seamlessly without the need for electronic conversion. Extensive simulations and experimental validations demonstrate the potential of the model as a foundational technology for future optical computing architectures, which paves the way toward more sustainable and efficient optical data processing platforms.
{"title":"All-optical combinational logical units featuring fifth-order cascade","authors":"Haiqi Gao , Yu Shao , Yipeng Chen , Junren Wen , Yuchuan Shao , Yueguang Zhang , Weidong Shen , Chenying Yang","doi":"10.1016/j.chip.2024.100112","DOIUrl":"10.1016/j.chip.2024.100112","url":null,"abstract":"<div><div>Modern computational technologies are gradually encountering significant limitations, driving a shift toward alternative paradigms such as optical computing. In this study, novel all-optical combinational logic units based on diffractive neural networks (D<sup>2</sup>NNs) were introduced, which were designed to perform high-order logical operations efficiently and swiftly with the adoption of only two modulation layers. This innovative design exhibits increased processing speed, improved energy efficiency, robust environmental stability, and high error tolerance, making it exceptionally well-suited for a broad spectrum of applications in optical computing and communications. By leveraging the transfer learning, we successfully developed a fifth-order cascaded combinational logic circuit for a practical information transmission system. Furthermore, we revealed a pioneering application of the device in optical time division multiplexing (OTDM), demonstrating its capability to manage high-speed data transfer seamlessly without the need for electronic conversion. Extensive simulations and experimental validations demonstrate the potential of the model as a foundational technology for future optical computing architectures, which paves the way toward more sustainable and efficient optical data processing platforms.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100112"},"PeriodicalIF":0.0,"publicationDate":"2024-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143129374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-11-08DOI: 10.1016/j.chip.2024.100117
Jiayi Ouyang , Shengping Liu , Ziyue Yang , Wei Wang , Xue Feng , Yongzhuo Li , Yidong Huang
A programmable photonic solver for quadratic unconstrained binary optimization (QUBO) problems is demonstrated with a hybrid optoelectronic scheme, which consists of a photonic chip and an electronic driving board. The photonic chip is employed to perform the optical vector-matrix multiplication (OVMM) to calculate the cost function of the QUBO problem, while the electronic processor runs the heuristic algorithm to search for the optimal solution. Due to the parallel and low-latency propagation of lightwaves, the calculation of the cost function can be accelerated. The photonic chip was fabricated on the silicon on insulator (SOI) substrate and integrated 16 high-speed electro-optic modulators, 88 thermo-optic phase shifters, and 16 balanced photodetectors. The computing speed of the photonic chip is 1.66 TFLOP/s. As a proof of principle, two randomly generated 16-dimensional QUBO problems are solved with high successful probabilities. These results present the potential of fast-solving optimization problems with integrated photonic systems.
{"title":"16-channel photonic solver for optimization problems on a silicon chip","authors":"Jiayi Ouyang , Shengping Liu , Ziyue Yang , Wei Wang , Xue Feng , Yongzhuo Li , Yidong Huang","doi":"10.1016/j.chip.2024.100117","DOIUrl":"10.1016/j.chip.2024.100117","url":null,"abstract":"<div><div>A programmable photonic solver for quadratic unconstrained binary optimization (QUBO) problems is demonstrated with a hybrid optoelectronic scheme, which consists of a photonic chip and an electronic driving board. The photonic chip is employed to perform the optical vector-matrix multiplication (OVMM) to calculate the cost function of the QUBO problem, while the electronic processor runs the heuristic algorithm to search for the optimal solution. Due to the parallel and low-latency propagation of lightwaves, the calculation of the cost function can be accelerated. The photonic chip was fabricated on the silicon on insulator (SOI) substrate and integrated 16 high-speed electro-optic modulators, 88 thermo-optic phase shifters, and 16 balanced photodetectors. The computing speed of the photonic chip is 1.66 TFLOP/s. As a proof of principle, two randomly generated 16-dimensional QUBO problems are solved with high successful probabilities. These results present the potential of fast-solving optimization problems with integrated photonic systems.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"4 1","pages":"Article 100117"},"PeriodicalIF":0.0,"publicationDate":"2024-11-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143403602","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-19DOI: 10.1016/j.chip.2024.100108
Yuhao Xiao , Kewen Zhu , Jinzhao Han , Sheng Liu , Guoqiang Wu
In this article, a two-dimensional (2D) honeycomb lattice phononic crystal (PnC) based micro-oven with large bandgap is introduced to be integrated with piezoelectric microelectromechanical systems (MEMS) resonator to reduce anchor loss for timing applications. Finite element method (FEM) analysis and experimental measurement were performed to verify that the proposed PnC micro-oven design gives advantage in quality factor (Q). The measurement results demonstrate that the resonator with 2D honeycomb lattice PnC micro-oven shows a repeatable 1.7 times improvement of average Q compared with the bare one. The resonator with micro-oven control was further measured for frequency stability. The proposed piezoelectric micro-oven-controlled MEMS resonator achieves a frequency stability of less than ±10 ppb in a stable environment, which indicates promising potential for application in high-end timing field.
{"title":"Q-enhancement of piezoelectric micro-oven-controlled MEMS resonators using honeycomb lattice phononic crystals","authors":"Yuhao Xiao , Kewen Zhu , Jinzhao Han , Sheng Liu , Guoqiang Wu","doi":"10.1016/j.chip.2024.100108","DOIUrl":"10.1016/j.chip.2024.100108","url":null,"abstract":"<div><div>In this article, a two-dimensional (2D) honeycomb lattice phononic crystal (PnC) based micro-oven with large bandgap is introduced to be integrated with piezoelectric microelectromechanical systems (MEMS) resonator to reduce anchor loss for timing applications. Finite element method (FEM) analysis and experimental measurement were performed to verify that the proposed PnC micro-oven design gives advantage in quality factor (<em>Q</em>). The measurement results demonstrate that the resonator with 2D honeycomb lattice PnC micro-oven shows a repeatable 1.7 times improvement of average <em>Q</em> compared with the bare one. The resonator with micro-oven control was further measured for frequency stability. The proposed piezoelectric micro-oven-controlled MEMS resonator achieves a frequency stability of less than ±10 ppb in a stable environment, which indicates promising potential for application in high-end timing field.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100108"},"PeriodicalIF":0.0,"publicationDate":"2024-09-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142707270","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-01DOI: 10.1016/j.chip.2024.100104
Rongxiang Guo , Qiyue Lang , Zunyue Zhang , Haofeng Hu , Tiegen Liu , Jiaqi Wang , Zhenzhou Cheng
Leveraging the low linear and nonlinear absorption loss of silicon atmid-infrared(mid-IR) wavelengths, silicon photonic integrated circuits (PICs) have attracted significant attention formid-IRapplications including optical sensing, spectroscopy, and nonlinear optics. However,mid-IRsilicon PICs typically show moderate performance compared tostate-of-the-artsilicon photonic devices operating in the telecommunication band. Here, we proposed and demonstrated suspended nanomembrane silicon (SNS) PICs with light-guiding withindeep-subwavelengthwaveguide thickness for operation in the short-wavelengthmid-IRregion. We demonstrated key building components, namely, grating couplers, waveguide arrays,micro-resonators,etc.,whichexhibitexcellent performances in bandwidths, back reflections, quality factors, and fabrication tolerance. Moreover,the resultsshow that the proposed SNS PICs have high compatibility with themulti-projectwafer foundry services. Our study provides an unprecedented platform formid-IRintegratedphotonics and applications.
{"title":"Suspended nanomembrane silicon photonic integrated circuits","authors":"Rongxiang Guo , Qiyue Lang , Zunyue Zhang , Haofeng Hu , Tiegen Liu , Jiaqi Wang , Zhenzhou Cheng","doi":"10.1016/j.chip.2024.100104","DOIUrl":"10.1016/j.chip.2024.100104","url":null,"abstract":"<div><p><strong>Leveraging the low linear and nonlinear absorption loss of silicon at</strong> <strong>mid-infrared</strong> <strong>(mid-IR) wavelengths, silicon photonic integrated circuits (PICs) have attracted significant attention for</strong> <strong>mid-IR</strong> <strong>applications including optical sensing, spectroscopy, and nonlinear optics. However,</strong> <strong>mid-IR</strong> <strong>silicon PICs typically show moderate performance compared to</strong> <strong>state-of-the-art</strong> <strong>silicon photonic devices operating in the telecommunication band. Here, we proposed and demonstrated suspended nanomembrane silicon (SNS) PICs with light</strong><strong>-</strong><strong>guiding within</strong> <strong>deep-subwavelength</strong> <strong>waveguide thickness for operation in the short</strong><strong>-</strong><strong>wavelength</strong> <strong>mid-IR</strong> <strong>region. We demonstrated key building components, namely, grating couplers, waveguide arrays,</strong> <strong>micro-resonators,</strong> <strong>etc.,</strong> <strong>which</strong> <strong>exhibit</strong> <strong>excellent performances in bandwidths, back reflections, quality factors, and fabrication tolerance. Moreover,</strong> <strong>the results</strong> <strong>show that the proposed SNS PICs have high compatibility with the</strong> <strong>multi-project</strong> <strong>wafer foundry services. Our study provides an unprecedented platform for</strong> <strong>mid-IR</strong> <strong>integrated</strong> <strong>photonics and applications.</strong></p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100104"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000224/pdfft?md5=cd27c1841a4799cf4cf48ad7ef718a52&pid=1-s2.0-S2709472324000224-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141691844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-01DOI: 10.1016/j.chip.2024.100105
Bo Li , Jinpei Lin , Linfei Gao , Zhengweng Ma , Huakai Yang , Zhihao Wu , Hsien-Chin Chiu , Hao-Chung Kuo , Chunfu Zhang , Zhihong Liu , Shuangwu Huang , Wei He , Xinke Liu
In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the breakdown voltage (VBR) of vertical GaN-on-GaN Schottky barrier diodes (SBDs), a dual ion coimplantation of carbon and helium was employed to create the edge termination. The resulting devices exhibited a low turn-on voltage of 0.55 V, a high Ion/Ioff ratio of approximately 109, and a low specific on-resistance of 1.93 mΩ cm2. When the ion implantation edge was terminated, the maximum VBR of the devices reached 1575 V, with an average improvement of 126%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW cm–2 and showed excellent reliability during pulse stress testing.
{"title":"Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination","authors":"Bo Li , Jinpei Lin , Linfei Gao , Zhengweng Ma , Huakai Yang , Zhihao Wu , Hsien-Chin Chiu , Hao-Chung Kuo , Chunfu Zhang , Zhihong Liu , Shuangwu Huang , Wei He , Xinke Liu","doi":"10.1016/j.chip.2024.100105","DOIUrl":"10.1016/j.chip.2024.100105","url":null,"abstract":"<div><p>In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the breakdown voltage (<em>V</em><sub>BR</sub>) of vertical GaN-on-GaN Schottky barrier diodes (SBDs), a dual ion coimplantation of carbon and helium was employed to create the edge termination. The resulting devices exhibited a low turn-on voltage of 0.55 V, a high <em>I</em><sub>on</sub>/<em>I</em><sub>off</sub> ratio of approximately 10<sup>9</sup>, and a low specific on-resistance of 1.93 mΩ cm<sup>2</sup>. When the ion implantation edge was terminated, the maximum <em>V</em><sub>BR</sub> of the devices reached 1575 V, with an average improvement of 126%. These devices demonstrated a high figure of merit (FOM) of 1.28 GW cm<sup>–2</sup> and showed excellent reliability during pulse stress testing.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100105"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000236/pdfft?md5=39e7a0c9e23864accd3ca2de9e3d77c6&pid=1-s2.0-S2709472324000236-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141844463","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-01DOI: 10.1016/j.chip.2024.100098
Reconfigurable field-effect transistors (R-FETs) that can dynamically reconfigure the transistor polarity, from n-type to p-type channel or vice versa, represent a promising new approach to reduce the logic complexity and granularity of programmable electronics. Although R-FETs have been successfully demonstrated upon silicon nanowire (SiNW) channels, a pair of extra program gates is still needed to control the source/drain (S/D) contacts. In this work, we propose a rather simple single gate R-FET structure with an asymmetric S/D electrode contact, where the FET channel polarity can be altered by changing the sign of channel bias Vds. These R-FETs were fabricated upon an orderly array of planar SiNW channels, grown via in-plane solid-liquid-solid mechanism, and contacted by Ti/Al and Pt/Au at the S/D electrodes, respectively. Remarkably, this channel-bias-controlled R-FET strategy has been successfully testified and implemented upon both p-type-doped (with indium dopants) or n-type-doped (phosphorus) SiNW channels, whereas the R-FET prototypes demonstrate an impressive high Ion/off ratio of > 106 and a steep subthreshold swing of 79 mV/dec. These results indicate a rather simple, compact and generic enough R-FET strategy for the construction of a new generation of SiNW-based programmable and low-power electronics.
可重构场效应晶体管（R-FET）能动态重构晶体管极性，从 n 型通道到 p 型通道，反之亦然，是降低逻辑复杂性和可编程电子器件粒度的一种很有前途的新方法。虽然 R 型场效应晶体管已在硅纳米线 (SiNW) 沟道上成功演示，但仍需要一对额外的编程门来控制源极/漏极 (S/D) 触点。在这项工作中，我们提出了一种具有非对称 S/D 电极触点的相当简单的单栅极 R-FET 结构，通过改变沟道偏压 Vds 的符号可以改变 FET 沟道的极性。这些 R-FET 是在平面 SiNW 沟道的有序阵列上制造的，通过平面内固-液-固机制生长，并在 S/D 电极上分别与 Ti/Al 和 Pt/Au 接触。值得注意的是，这种沟道偏压控制的 R-FET 策略已在掺杂 p 型（含铟）或 n 型（磷）的 SiNW 沟道上得到成功验证和实施，而 R-FET 原型则表现出令人印象深刻的 106 的高离子/关断比和 79 mV/dec 的陡峭次阈值摆幅。这些结果表明，对于构建基于 SiNW 的新一代可编程低功耗电子器件而言，R-FET 是一种相当简单、紧凑和通用的策略。
{"title":"Channel-bias-controlled reconfigurable silicon nanowire transistors via an asymmetric electrode contact strategy","authors":"","doi":"10.1016/j.chip.2024.100098","DOIUrl":"10.1016/j.chip.2024.100098","url":null,"abstract":"<div><p>Reconfigurable field-effect transistors (R-FETs) that can dynamically reconfigure the transistor polarity, from n-type to p-type channel or vice versa, represent a promising new approach to reduce the logic complexity and granularity of programmable electronics. Although R-FETs have been successfully demonstrated upon silicon nanowire (SiNW) channels, a pair of extra program gates is still needed to control the source/drain (S/D) contacts. In this work, we propose a rather simple single gate R-FET structure with an asymmetric S/D electrode contact, where the FET channel polarity can be altered by changing the sign of channel bias <em>V</em><sub>ds</sub>. These R-FETs were fabricated upon an orderly array of planar SiNW channels, grown via in-plane solid-liquid-solid mechanism, and contacted by Ti/Al and Pt/Au at the S/D electrodes, respectively. Remarkably, this channel-bias-controlled R-FET strategy has been successfully testified and implemented upon both p-type-doped (with indium dopants) or n-type-doped (phosphorus) SiNW channels, whereas the R-FET prototypes demonstrate an impressive high <em>I</em><sub>on/off</sub> ratio of > 10<sup>6</sup> and a steep subthreshold swing of 79 mV/dec. These results indicate a rather simple, compact and generic enough R-FET strategy for the construction of a new generation of SiNW-based programmable and low-power electronics.</p></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100098"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000169/pdfft?md5=e3070abd5dfb82b3bdcb7e25f29beb8d&pid=1-s2.0-S2709472324000169-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141411691","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-01DOI: 10.1016/j.chip.2024.100106
Wenjie Dou , Chaonan Lin , Wei Fan , Xun Yang , Chao Fang , Huaping Zang , Shaoyi Wang , Congxu Zhu , Zhi Zheng , Weimin Zhou , Chongxin Shan
Diamond is a highly suitable material for X-ray detectors that can function effectively in harsh environments due to its unique properties such as ultrawide bandgap, high radiation resistance, excellent carrier mobility as well as remarkable chemical and thermal stability. However, the sensitivity of diamond X-ray detectors needs further improvement due to the relatively low X-ray absorption efficiency of diamond, and the exploration of single-crystal diamond array imaging still remains unexplored. In the current work, a 10 × 10 X-ray photodetector array was constructed from single-crystal diamond. To improve the sensitivity of the diamond X-ray detector, an asymmetric sandwich electrode structure was utilized. Additionally, trenches were created through laser cutting to prevent crosstalk between adjacent pixels. The diamond X-ray detector array exhibits exceptional performance, including a low detection limit of 4.9 nGy s−1, a sensitivity of 14.3 mC Gy−1 cm−2, and a light-dark current ratio of 18,312, which are among the most favorable values ever reported for diamond X-ray detectors. Furthermore, these diamond X-ray detectors can operate at high temperatures up to 450 °C, making them suitable for development in harsh environments.
金刚石具有超宽带隙、高抗辐射性、优异的载流子迁移率以及出色的化学和热稳定性等独特性能，是一种非常适合用于 X 射线探测器的材料，可在恶劣环境中有效发挥作用。然而，由于金刚石对 X 射线的吸收效率相对较低，因此金刚石 X 射线探测器的灵敏度有待进一步提高，而单晶金刚石阵列成像的探索仍处于起步阶段。在此，我们用单晶金刚石构建了一个 10 × 10 的 X 射线光电探测器阵列。为了提高金刚石 X 射线探测器的灵敏度，采用了非对称三明治电极结构。此外，还通过激光切割形成沟槽，以防止相邻像素之间发生串扰。金刚石 X 射线探测器阵列显示出卓越的性能，包括 4.9 nGy s 的低检测限、14.3 mC Gy cm 的灵敏度和 18,312 的明暗电流比，这些都是迄今为止所报道的金刚石 X 射线探测器中最理想的数值。此外，这些金刚石 X 射线探测器可在高达 450 °C 的高温下工作，因此适合在恶劣环境中开发。
{"title":"Highly sensitive diamond X-ray detector array for high-temperature applications","authors":"Wenjie Dou , Chaonan Lin , Wei Fan , Xun Yang , Chao Fang , Huaping Zang , Shaoyi Wang , Congxu Zhu , Zhi Zheng , Weimin Zhou , Chongxin Shan","doi":"10.1016/j.chip.2024.100106","DOIUrl":"10.1016/j.chip.2024.100106","url":null,"abstract":"<div><div>Diamond is a highly suitable material for X-ray detectors that can function effectively in harsh environments due to its unique properties such as ultrawide bandgap, high radiation resistance, excellent carrier mobility as well as remarkable chemical and thermal stability. However, the sensitivity of diamond X-ray detectors needs further improvement due to the relatively low X-ray absorption efficiency of diamond, and the exploration of single-crystal diamond array imaging still remains unexplored. In the current work, a 10 × 10 X-ray photodetector array was constructed from single-crystal diamond. To improve the sensitivity of the diamond X-ray detector, an asymmetric sandwich electrode structure was utilized. Additionally, trenches were created through laser cutting to prevent crosstalk between adjacent pixels. The diamond X-ray detector array exhibits exceptional performance, including a low detection limit of 4.9 nGy s<sup>−1</sup>, a sensitivity of 14.3 mC Gy<sup>−1</sup> cm<sup>−2</sup>, and a light-dark current ratio of 18,312, which are among the most favorable values ever reported for diamond X-ray detectors. Furthermore, these diamond X-ray detectors can operate at high temperatures up to 450 °C, making them suitable for development in harsh environments.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100106"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.sciencedirect.com/science/article/pii/S2709472324000248/pdfft?md5=641348a92d64c73eaa83ace8518de946&pid=1-s2.0-S2709472324000248-main.pdf","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206231","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-09-01DOI: 10.1016/j.chip.2024.100101
The emergence of data-centric applications such as artificial intelligence (AI), machine learning, and the Internet of Things (IoT), has promoted surges in demand for storage memories with high operating speed and nonvolatile characteristics. HfO2-based ferroelectric memory technologies, which emerge as a promising alternative, have attracted considerable attention due to their high performance, energy efficiency, and full compatibility with the standard complementary metal-oxide-semiconductors (CMOS) process. These nonvolatile storage elements, such as ferroelectric random access memory (FeRAM), ferroelectric field-effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs), possess different data access mechanisms, individual merits, and specific application boundaries in next-generation memories or even beyond von Neumann architecture. This paper provides an overview of ferroelectric HfO2 memory technologies, addresses the current challenges, and offers insights into future research directions and prospects.
{"title":"Challenges and recent advances in HfO2-based ferroelectric films for non-volatile memory applications","authors":"","doi":"10.1016/j.chip.2024.100101","DOIUrl":"10.1016/j.chip.2024.100101","url":null,"abstract":"<div><div>The emergence of data-centric applications such as artificial intelligence (AI), machine learning, and the Internet of Things (IoT), has promoted surges in demand for storage memories with high operating speed and nonvolatile characteristics. HfO<sub>2</sub>-based ferroelectric memory technologies, which emerge as a promising alternative, have attracted considerable attention due to their high performance, energy efficiency, and full compatibility with the standard complementary metal-oxide-semiconductors (CMOS) process. These nonvolatile storage elements, such as ferroelectric random access memory (FeRAM), ferroelectric field-effect transistors (FeFETs), and ferroelectric tunnel junctions (FTJs), possess different data access mechanisms, individual merits, and specific application boundaries in next-generation memories or even beyond von Neumann architecture. This paper provides an overview of ferroelectric HfO<sub>2</sub> memory technologies, addresses the current challenges, and offers insights into future research directions and prospects.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 3","pages":"Article 100101"},"PeriodicalIF":0.0,"publicationDate":"2024-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141394538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-08-08DOI: 10.1016/j.chip.2024.100107
Xinyu Wang , Die Wang , Yuchen Tian , Jing Guo , Jinshui Miao , Weida Hu , Hailu Wang , Kang Liu , Lei Shao , Saifei Gou , Xiangqi Dong , Hesheng Su , Chuming Sheng , Yuxuan Zhu , Zhejia Zhang , Jinshu Zhang , Qicheng Sun , Zihan Xu , Peng Zhou , Honglei Chen , Wenzhong Bao
Photodetectors (PDs) are crucial in modern society as they enable the detection of a diverse range of light-based signals. With the exponential increase in their development, materials are being used to create a wide range of PDs that play critical roles in enabling various applications and technologies. Image sensor technology has been hindered due to the lack of a universal system that can integrate all types of PDs with silicon-based readout integrated circuits (ROICs). To address this issue, we conducted experiments adopting two-dimensional materials as an example. High-performance MoS2-/MoTe2-based PDs were fabricated in the current work and the most suitable ROICs were identified to pair with them. This established a solid foundation for further researches in the field of image sensors. We developed and implemented a versatile testing system that uses a printed circuit board to connect the PD and ROIC. After the ROIC generates the sampled signal, it is collected and processed by algorithms, which overcome device uniformity limitations and produce a high-quality image that is visible to the naked eye. This universal system can be used with a wide range of PD and ROIC types made from different materials, making it highly convenient for diverse testing applications and the development of diverse image sensor types. This robust new platform is expected to spur further innovation and advancements in this rapidly developing field.
{"title":"A universal optoelectronic imaging platform with wafer-scale integration of two-dimensional semiconductors","authors":"Xinyu Wang , Die Wang , Yuchen Tian , Jing Guo , Jinshui Miao , Weida Hu , Hailu Wang , Kang Liu , Lei Shao , Saifei Gou , Xiangqi Dong , Hesheng Su , Chuming Sheng , Yuxuan Zhu , Zhejia Zhang , Jinshu Zhang , Qicheng Sun , Zihan Xu , Peng Zhou , Honglei Chen , Wenzhong Bao","doi":"10.1016/j.chip.2024.100107","DOIUrl":"10.1016/j.chip.2024.100107","url":null,"abstract":"<div><div>Photodetectors (PDs) are crucial in modern society as they enable the detection of a diverse range of light-based signals. With the exponential increase in their development, materials are being used to create a wide range of PDs that play critical roles in enabling various applications and technologies. Image sensor technology has been hindered due to the lack of a universal system that can integrate all types of PDs with silicon-based readout integrated circuits (ROICs). To address this issue, we conducted experiments adopting two-dimensional materials as an example. High-performance MoS<sub>2</sub>-/MoTe<sub>2</sub>-based PDs were fabricated in the current work and the most suitable ROICs were identified to pair with them. This established a solid foundation for further researches in the field of image sensors. We developed and implemented a versatile testing system that uses a printed circuit board to connect the PD and ROIC. After the ROIC generates the sampled signal, it is collected and processed by algorithms, which overcome device uniformity limitations and produce a high-quality image that is visible to the naked eye. This universal system can be used with a wide range of PD and ROIC types made from different materials, making it highly convenient for diverse testing applications and the development of diverse image sensor types. This robust new platform is expected to spur further innovation and advancements in this rapidly developing field.</div></div>","PeriodicalId":100244,"journal":{"name":"Chip","volume":"3 4","pages":"Article 100107"},"PeriodicalIF":0.0,"publicationDate":"2024-08-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142206230","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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