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Guest Editorial : 26th International Symposium on VLSI Design and Test 2022 客座编辑:2022年第26届超大规模集成电路设计与测试国际研讨会
Pub Date : 2023-10-01 DOI: 10.1016/j.memori.2023.100072
Ambika Prasad Shah , Bhupendra Singh Reniwal
{"title":"Guest Editorial : 26th International Symposium on VLSI Design and Test 2022","authors":"Ambika Prasad Shah , Bhupendra Singh Reniwal","doi":"10.1016/j.memori.2023.100072","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100072","url":null,"abstract":"","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"5 ","pages":"Article 100072"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50193867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
An ultra-thin absorber in microwave range: 50 GHz band-width, absorption over 80 % 微波范围内的超薄吸收体:50 GHz带宽,吸收率超过80%
Pub Date : 2023-10-01 DOI: 10.1016/j.memori.2023.100063
Ilghar Rezaei , Behnaz Rashidi , Amir Ali Mohammad Khani , Toktam Aghaee

An ultra-thin microwave absorber with a 34 GHz bandwidth more than 90% absorption in the frequency range of 33.5 GHz - 67.5 GHz, and 50 GHz bandwidth, more than 80 % absorption is proposed. The functionality of the device was analyzed using an equivalent circuit model (ECM) by exploiting the impedance matching concept in the transmission line theory. By changing the chemical potential of the graphene, following manipulating characteristics of the graphene surface conductivity, can achieve several absorption responses in wideband range frequencies. Additionally, the proposed absorption is stable in a wide range of incident angles. These advantages make the proposed absorption attractive for several applications such as optical sensors and detectors.

提出了一种超薄微波吸收体,其34 GHz带宽在33.5 GHz-67.5 GHz的频率范围内吸收率超过90%,50 GHz带宽吸收率超过80%。利用传输线理论中的阻抗匹配概念,使用等效电路模型(ECM)分析了该设备的功能。通过改变石墨烯的化学势,遵循石墨烯表面导电性的操纵特性,可以在宽带范围内实现几种吸收响应。此外,所提出的吸收在较宽的入射角范围内是稳定的。这些优点使得所提出的吸收对于诸如光学传感器和检测器的若干应用具有吸引力。
{"title":"An ultra-thin absorber in microwave range: 50 GHz band-width, absorption over 80 %","authors":"Ilghar Rezaei ,&nbsp;Behnaz Rashidi ,&nbsp;Amir Ali Mohammad Khani ,&nbsp;Toktam Aghaee","doi":"10.1016/j.memori.2023.100063","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100063","url":null,"abstract":"<div><p>An ultra-thin microwave absorber with a 34 GHz bandwidth more than 90% absorption in the frequency range of 33.5 GHz - 67.5 GHz, and 50 GHz bandwidth, more than 80 % absorption is proposed. The functionality of the device was analyzed using an equivalent circuit model (ECM) by exploiting the impedance matching concept in the transmission line theory. By changing the chemical potential of the graphene, following manipulating characteristics of the graphene surface conductivity, can achieve several absorption responses in wideband range frequencies. Additionally, the proposed absorption is stable in a wide range of incident angles. These advantages make the proposed absorption attractive for several applications such as optical sensors and detectors.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"5 ","pages":"Article 100063"},"PeriodicalIF":0.0,"publicationDate":"2023-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50194255","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Fault-tolerant reversible logic gate-based RO-PUF design 基于容错可逆逻辑门的RO-PUF设计
Pub Date : 2023-07-01 DOI: 10.1016/j.memori.2023.100055
Mridula Karmakar , Syed Farah Naz , Ambika Prasad Shah

Physically Unclonable Function (PUF) is an emerging modern approach to the security concerns of the physical systems which require the protection of sensitive data. PUF generates unique, reliable, and secure responses which can be utilized for cryptographic applications. In this paper, a fault-tolerant reversible logic gate-based RO PUF is proposed. We utilized a fault-tolerant reversible logic Double Feynman Gate in place of conventional inverters to design the ring oscillators (RO). The proposed RO PUF designs implemented and evaluated on the Basys-3 Artix-7 FPGA board. The PUF parameters such as uniqueness, reliability, and uniformity were analyzed based on the experimental results. The empirical results show that the proposed RO PUF has uniqueness and reliability of 0.49 and 85.95%, respectively. The inter-chip and intra-chip uniqueness for the proposed design is 23% and 25.5%, respectively higher than the conventional RO PUF design. This fault-tolerant reversible logic gate-based RO PUF design shows better uniqueness, reliability, and uniformity than other considered PUF designs.

物理不可控制功能(PUF)是一种新兴的现代方法,用于解决需要保护敏感数据的物理系统的安全问题。PUF生成可用于加密应用程序的唯一、可靠和安全的响应。本文提出了一种基于容错可逆逻辑门的RO PUF。我们使用容错可逆逻辑双费曼门代替传统的反相器来设计环形振荡器(RO)。所提出的RO PUF设计在Basys-3 Artix-7 FPGA板上实现并评估。基于实验结果分析了PUF的唯一性、可靠性和均匀性等参数。实验结果表明,所提出的RO PUF的唯一性和可靠性分别为0.49%和85.95%。所提出的设计的芯片间和芯片内唯一性分别比传统的RO PUF设计高23%和25.5%。这种基于容错可逆逻辑门的RO PUF设计比其他考虑的PUF设计显示出更好的唯一性、可靠性和一致性。
{"title":"Fault-tolerant reversible logic gate-based RO-PUF design","authors":"Mridula Karmakar ,&nbsp;Syed Farah Naz ,&nbsp;Ambika Prasad Shah","doi":"10.1016/j.memori.2023.100055","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100055","url":null,"abstract":"<div><p>Physically Unclonable Function (PUF) is an emerging modern approach to the security concerns of the physical systems which require the protection of sensitive data. PUF generates unique, reliable, and secure responses which can be utilized for cryptographic applications. In this paper, a fault-tolerant reversible logic gate-based RO PUF is proposed. We utilized a fault-tolerant reversible logic Double Feynman Gate in place of conventional inverters to design the ring oscillators (RO). The proposed RO PUF designs implemented and evaluated on the Basys-3 Artix-7 FPGA board. The PUF parameters such as uniqueness, reliability, and uniformity were analyzed based on the experimental results. The empirical results show that the proposed RO PUF has uniqueness and reliability of 0.49 and 85.95%, respectively. The inter-chip and intra-chip uniqueness for the proposed design is 23% and 25.5%, respectively higher than the conventional RO PUF design. This fault-tolerant reversible logic gate-based RO PUF design shows better uniqueness, reliability, and uniformity than other considered PUF designs.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100055"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Combustion synthesis and characterization of dysprosium nano-composite melilite 镝纳米复合蜂蜡石的燃烧合成及表征
Pub Date : 2023-07-01 DOI: 10.1016/j.memori.2023.100042
Cliff Orori Mosiori

Light emitting nano-scale materials have attracted a great interest in recent days. In view of this, a nanocrystal solid luminescent composite material was prepared using combustion processing technique and its identity was analyzed and further investigated. The precursor reagents were measured using the single pan analytical balance. A sample was synthesized and its functional group was identified using the FTIR spectroscopy and XRD studies as having similar properties to those in Batch No. JCPDS No. 77-1149 and in Base Code AMCSD 0008032. Its photoluminescence spectrum identified peaks located at 476 nm, 578 nm and 615 nm that were attributed to electronic transition from 4F9/2 to 6H15/2, from 4F9/2 to 6H13/2 and from 4F9/2 to 6H11/2 respectively as the finger blue-prints of dysprosium [Dy3+] ion. Its crystalline sizes and strains were calculated using the Debay Scherrer’s equation and analyzed using the UDM model. The findings showed that the prepared sample had a superior homogeneity and further that the Dy3+ influenced its formation. The mellite sample was identified to be Ca2MgSi2O7:Dy3+. Further analysis on the sample suggested that was a potential white light emitting luminescent material just like Ca2MgSi2O7:Tb3+ phosphor and Sr2MgSi2O7:Dy3+ phosphor.

近年来,发光纳米材料引起了人们的极大兴趣。有鉴于此,利用燃烧加工技术制备了纳米晶体固体发光复合材料,并对其特性进行了分析和进一步研究。使用单盘分析天平测量前体试剂。合成样品,并使用FTIR光谱和XRD研究将其官能团鉴定为具有与批号JCPDS No.77-1149和基本代码AMCSD 0008032中的那些相似的性质。其光致发光光谱确定了位于476nm、578nm和615nm处的峰,这些峰分别归因于从4F9/2到6H15/2、从4F9/2-6H13/2和从4F9/2-6 H11/2的电子跃迁,作为镝[Dy3+]离子的指状蓝图。使用Debay-Scherrer方程计算其晶体尺寸和应变,并使用UDM模型进行分析。研究结果表明,制备的样品具有优异的均匀性,并且Dy3+影响了其形成。经鉴定,醇盐样品为Ca2MgSi2O7:Dy3+。对样品的进一步分析表明,它是一种潜在的白光发光材料,就像Ca2MgSi2O7:Tb3+磷光体和Sr2MgSi2O3 7:Dy3+磷光体一样。
{"title":"Combustion synthesis and characterization of dysprosium nano-composite melilite","authors":"Cliff Orori Mosiori","doi":"10.1016/j.memori.2023.100042","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100042","url":null,"abstract":"<div><p>Light emitting nano-scale materials have attracted a great interest in recent days. In view of this, a nanocrystal solid luminescent composite material was prepared using combustion processing technique and its identity was analyzed and further investigated. The precursor reagents were measured using the single pan analytical balance. A sample was synthesized and its functional group was identified using the FTIR spectroscopy and XRD studies as having similar properties to those in Batch No. JCPDS No. 77-1149 and in Base Code AMCSD 0008032. Its photoluminescence spectrum identified peaks located at 476 nm, 578 nm and 615 nm that were attributed to electronic transition from <sup>4</sup><span><math><msub><mrow><mi>F</mi></mrow><mrow><mi>9/2</mi></mrow></msub></math></span> to <sup>6</sup>H<span><math><msub><mrow></mrow><mrow><mi>15/2</mi></mrow></msub></math></span>, from <sup>4</sup><span><math><msub><mrow><mi>F</mi></mrow><mrow><mi>9/2</mi></mrow></msub></math></span> to <sup>6</sup>H<span><math><msub><mrow></mrow><mrow><mi>13/2</mi></mrow></msub></math></span> and from <sup>4</sup><span><math><msub><mrow><mi>F</mi></mrow><mrow><mi>9/2</mi></mrow></msub></math></span> to <sup>6</sup>H<span><math><msub><mrow></mrow><mrow><mi>11/2</mi></mrow></msub></math></span> respectively as the finger blue-prints of dysprosium [Dy<span><math><msup><mrow></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></math></span>] ion. Its crystalline sizes and strains were calculated using the Debay Scherrer’s equation and analyzed using the UDM model. The findings showed that the prepared sample had a superior homogeneity and further that the Dy<span><math><msup><mrow></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></math></span> influenced its formation. The mellite sample was identified to be Ca<sub>2</sub>MgSi<sub>2</sub>O<sub>7</sub>:Dy<span><math><msup><mrow></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></math></span>. Further analysis on the sample suggested that was a potential white light emitting luminescent material just like Ca<sub>2</sub>MgSi<sub>2</sub>O<sub>7</sub>:Tb<span><math><msup><mrow></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></math></span> phosphor and Sr<sub>2</sub>MgSi<sub>2</sub>O<sub>7</sub>:Dy<span><math><msup><mrow></mrow><mrow><mn>3</mn><mo>+</mo></mrow></msup></math></span> phosphor.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100042"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199626","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A time domain 2D OaA-based convolutional neural networks accelerator 一种基于时域二维OaA的卷积神经网络加速器
Pub Date : 2023-07-01 DOI: 10.1016/j.memori.2023.100041
Rudresh Pratap Singh , Shreyam Kumar , Jugal Gandhi , Diksha Shekhawat , M. Santosh , Jai Gopal Pandey

Convolutional neural networks (CNNs) are widely implemented in modern facial recognition systems for image recognition applications. Runtime speed is a critical parameter for real-time systems. Traditional FPGA-based accelerations require either large on-chip memory or high bandwidth and high memory access time that slow down the network. The proposed work uses an algorithm and its subsequent hardware design for a quick CNN computation using an overlap-and-add-based technique in the time domain. In the algorithm, the input images are broken into tiles that can be processed independently without computing overhead in the frequency domain. This also allows for efficient concurrency of the convolution process, resulting in higher throughput and lower power consumption. At the same time, we maintain low on-chip memory requirements necessary for faster and cheaper processor designs. We implemented CNN VGG-16 and AlexNet models with our design on Xilinx Virtex-7 and Zynq boards. The performance analysis of our design provides 48% better throughput than the state-of-the-art AlexNet and uses 68.85% lesser multipliers and other resources than the state-of-the-art VGG-16.

卷积神经网络(CNNs)在现代人脸识别系统中被广泛应用于图像识别应用。运行时速度是实时系统的一个关键参数。传统的基于FPGA的加速需要大的片上存储器或高带宽和高存储器访问时间,这会减慢网络速度。所提出的工作使用一种算法及其后续硬件设计,在时域中使用基于重叠和加法的技术进行快速CNN计算。在该算法中,输入图像被分解成可以独立处理的瓦片,而无需频域中的计算开销。这也允许卷积过程的高效并发,从而获得更高的吞吐量和更低的功耗。同时,我们保持较低的片上存储器需求,这是更快、更便宜的处理器设计所必需的。我们在Xilinx Virtex-7和Zynq板上实现了CNN VGG-16和AlexNet模型。我们设计的性能分析提供了比最先进的AlexNet高48%的吞吐量,并使用了比最新的VGG-16少68.85%的乘法器和其他资源。
{"title":"A time domain 2D OaA-based convolutional neural networks accelerator","authors":"Rudresh Pratap Singh ,&nbsp;Shreyam Kumar ,&nbsp;Jugal Gandhi ,&nbsp;Diksha Shekhawat ,&nbsp;M. Santosh ,&nbsp;Jai Gopal Pandey","doi":"10.1016/j.memori.2023.100041","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100041","url":null,"abstract":"<div><p>Convolutional neural networks (CNNs) are widely implemented in modern facial recognition systems for image recognition applications. Runtime speed is a critical parameter for real-time systems. Traditional FPGA-based accelerations require either large on-chip memory or high bandwidth and high memory access time that slow down the network. The proposed work uses an algorithm and its subsequent hardware design for a quick CNN computation using an overlap-and-add-based technique in the time domain. In the algorithm, the input images are broken into tiles that can be processed independently without computing overhead in the frequency domain. This also allows for efficient concurrency of the convolution process, resulting in higher throughput and lower power consumption. At the same time, we maintain low on-chip memory requirements necessary for faster and cheaper processor designs. We implemented CNN VGG-16 and AlexNet models with our design on Xilinx Virtex-7 and Zynq boards. The performance analysis of our design provides 48% better throughput than the state-of-the-art AlexNet and uses 68.85% lesser multipliers and other resources than the state-of-the-art VGG-16.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100041"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199627","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hierarchical fuzzy deep learning system for various classes of images 适用于各类图像的层次模糊深度学习系统
Pub Date : 2023-07-01 DOI: 10.1016/j.memori.2022.100023
Shashank Kamthan , Harpreet Singh

There has been an increasing interest in the development of deep-learning models for the large data processing such as images, audio, or video. Image processing has made breakthroughs in addressing important problems such as genome-wide biological networks, map interactions of genes and proteins, network, etc. With the increase in sophistication of the system, and other areas such as internet of things, social media, web development, etc., the need for classification of image data has been felt more than ever before. It is more important to develop intelligent approaches that can take care of the sophistication of systems. Several researchers are working on the real-time images to solve the problems related to the classification of images. The algorithms to be developed will have to meet the large image datasets. In this paper, the generalized hierarchical fuzzy deep learning approach is discussed and developed to meet such demands. The objective is to design the algorithm for image classification so that it results in high accuracy. The approach is for real-life intelligent systems and the classification results have been shared for large image datasets such as the YaleB database. The accuracy of the algorithm has been obtained for various classes of images using image thresholding. The development of learning algorithms has been validated on corrupted and noisy data and results of various classes of images are presented.

人们对开发用于图像、音频或视频等大数据处理的深度学习模型越来越感兴趣。图像处理在解决全基因组生物网络、基因和蛋白质的图谱交互、网络等重要问题方面取得了突破。随着系统的复杂性以及物联网、社交媒体、网络开发等其他领域的发展,人们比以往任何时候都更需要对图像数据进行分类。更重要的是开发能够处理系统复杂性的智能方法。一些研究人员正在研究实时图像,以解决与图像分类相关的问题。待开发的算法必须满足大型图像数据集的要求。本文讨论并开发了广义层次模糊深度学习方法来满足这些需求。目的是设计用于图像分类的算法,以使其具有高精度。该方法适用于现实生活中的智能系统,分类结果已共享给大型图像数据集,如YaleB数据库。该算法的准确性已经通过使用图像阈值来获得各种图像类别。学习算法的发展已经在损坏和有噪声的数据上得到了验证,并给出了各类图像的结果。
{"title":"Hierarchical fuzzy deep learning system for various classes of images","authors":"Shashank Kamthan ,&nbsp;Harpreet Singh","doi":"10.1016/j.memori.2022.100023","DOIUrl":"https://doi.org/10.1016/j.memori.2022.100023","url":null,"abstract":"<div><p>There has been an increasing interest in the development of deep-learning models for the large data processing such as images, audio, or video. Image processing has made breakthroughs in addressing important problems such as genome-wide biological networks, map interactions of genes and proteins, network, etc. With the increase in sophistication of the system, and other areas such as internet of things, social media, web development, etc., the need for classification of image data has been felt more than ever before. It is more important to develop intelligent approaches that can take care of the sophistication of systems. Several researchers are working on the real-time images to solve the problems related to the classification of images. The algorithms to be developed will have to meet the large image datasets. In this paper, the generalized hierarchical fuzzy deep learning approach is discussed and developed to meet such demands. The objective is to design the algorithm for image classification so that it results in high accuracy. The approach is for real-life intelligent systems and the classification results have been shared for large image datasets such as the YaleB database. The accuracy of the algorithm has been obtained for various classes of images using image thresholding. The development of learning algorithms has been validated on corrupted and noisy data and results of various classes of images are presented.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100023"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50200139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Fatigue behavior of 3D stacked packaging structures under extreme thermal cycling condition 三维堆叠封装结构在极端热循环条件下的疲劳行为
Pub Date : 2023-07-01 DOI: 10.1016/j.memori.2023.100032
Xin Xu , Yang Liu , Yahui Su , Cong Sun , Yuxiong Xue , Lina Ju , Shuye Zhang

In deep space exploration environment, electronic devices face severe tests. C4 solder joints and TSV, as the weak links of the three-dimensional packaging structure, have a significant impact on the reliability of the packaging structure. This work focuses on the typical three-dimensional packaging structure and utilizes finite element software to analyze the influence of extreme thermal cycling on the fatigue life of packaging structure. The results show that under the extreme temperature range of -100120 °C, the maximum stress concentration of a typical 3D packaging structure occurs at the interface between the TSV and Si chip, and the TSV and C4 solder joints remote from the center bear greater stress and strain. The maximum stress of TSV appears at the end edge of TSV at the upper left corner. The maximum stress of the C4 welding spot appears on the second welding spot in the rightmost column. The most dangerous TSV fatigue life is 1.07 × 107 cycles calculated by combining the finite element simulation results with the Coffin Manson model. The life of the most dangerous C4 solder joint is 2892 cycles. C4 solder joint is the failure-sensitive location of the three-dimensional packaging structure under extreme ambient temperature, and optimization design is required in the subsequent work to improve its reliable life.

在深空探测环境中,电子设备面临着严峻的考验。C4焊点和TSV作为三维封装结构的薄弱环节,对封装结构的可靠性有着重大影响。本文以典型的三维封装结构为研究对象,利用有限元软件分析了极端热循环对封装结构疲劳寿命的影响。结果表明,在-100~120°C的极端温度范围内,典型的3D封装结构的最大应力集中发生在TSV和Si芯片之间的界面,远离中心的TSV和C4焊点承受更大的应力和应变。TSV的最大应力出现在TSV左上角的端部边缘。C4焊点的最大应力出现在最右侧列中的第二个焊点上。将有限元模拟结果与Coffin-Manson模型相结合,计算出TSV最危险的疲劳寿命为1.07×107个循环。最危险的C4焊点的寿命为2892个循环。C4焊点是三维封装结构在极端环境温度下的失效敏感部位,需要在后续工作中进行优化设计,以提高其可靠性寿命。
{"title":"Fatigue behavior of 3D stacked packaging structures under extreme thermal cycling condition","authors":"Xin Xu ,&nbsp;Yang Liu ,&nbsp;Yahui Su ,&nbsp;Cong Sun ,&nbsp;Yuxiong Xue ,&nbsp;Lina Ju ,&nbsp;Shuye Zhang","doi":"10.1016/j.memori.2023.100032","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100032","url":null,"abstract":"<div><p>In deep space exploration environment, electronic devices face severe tests. C4 solder joints and TSV, as the weak links of the three-dimensional packaging structure, have a significant impact on the reliability of the packaging structure. This work focuses on the typical three-dimensional packaging structure and utilizes finite element software to analyze the influence of extreme thermal cycling on the fatigue life of packaging structure. The results show that under the extreme temperature range of -100<span><math><mo>∼</mo></math></span>120 °C, the maximum stress concentration of a typical 3D packaging structure occurs at the interface between the TSV and Si chip, and the TSV and C4 solder joints remote from the center bear greater stress and strain. The maximum stress of TSV appears at the end edge of TSV at the upper left corner. The maximum stress of the C4 welding spot appears on the second welding spot in the rightmost column. The most dangerous TSV fatigue life is 1.07 × 10<sup>7</sup> cycles calculated by combining the finite element simulation results with the Coffin Manson model. The life of the most dangerous C4 solder joint is 2892 cycles. C4 solder joint is the failure-sensitive location of the three-dimensional packaging structure under extreme ambient temperature, and optimization design is required in the subsequent work to improve its reliable life.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100032"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199553","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Design impact on three gate Dynamic Flash Memory (3G_DFM) for long hole retention time and robust disturbance shield 三门动态闪存(3G_DFM)设计对长空穴保持时间和鲁棒干扰屏蔽的影响
Pub Date : 2023-07-01 DOI: 10.1016/j.memori.2023.100054
Koji Sakui, Yisuo Li, Masakazu Kakumu, Kenichi Kanazawa, Iwao Kunishima, Yoshihisa Iwata, Nozomu Harada

TCAD simulation using Silvaco software has shown that the 3G_DFM, which has SG1 (Select Gate 1), PL (Plate Line Gate), and SG2 (Select Gate 2) between SL (Source Line) and BL (Bit Line), has a long retention time of 100ms at 85 °C, and a robust disturbance shield which is a thousand times BL stress. The two select gates SG1 and SG2 protect the recombination of holes in the FB (Floating Body) at the SL and BL pn-junctions, and shield the BL stress arising during other page operations, which leads to the GIDL (Gate Induced Drain Leakage) current.

使用Silvaco软件进行的TCAD模拟表明,在SL(源线)和BL(位线)之间具有SG1(选择门1)、PL(板线门)和SG2(选择门2)的3G_DFM在85°C下具有100ms的长保持时间,并且具有高达BL应力千倍的强大干扰屏蔽。两个选择栅极SG1和SG2保护SL和BL pn结处FB(浮体)中的空穴的复合,并屏蔽在其他页面操作期间产生的BL应力,这导致GIDL(栅极感应漏极泄漏)电流。
{"title":"Design impact on three gate Dynamic Flash Memory (3G_DFM) for long hole retention time and robust disturbance shield","authors":"Koji Sakui,&nbsp;Yisuo Li,&nbsp;Masakazu Kakumu,&nbsp;Kenichi Kanazawa,&nbsp;Iwao Kunishima,&nbsp;Yoshihisa Iwata,&nbsp;Nozomu Harada","doi":"10.1016/j.memori.2023.100054","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100054","url":null,"abstract":"<div><p>TCAD simulation using Silvaco software has shown that the 3G_DFM, which has <em>SG1</em> (Select Gate 1), <em>PL</em> (Plate Line Gate), and <em>SG2</em> (Select Gate 2) between <em>SL</em> (Source Line) and <em>BL</em> (Bit Line), has a long retention time of 100ms at 85 °C, and a robust disturbance shield which is a thousand times <em>BL</em> stress. The two select gates <em>SG1</em> and <em>SG2</em> protect the recombination of holes in the <em>FB</em> (Floating Body) at the <em>SL</em> and <em>BL</em> pn-junctions, and shield the <em>BL</em> stress arising during other page operations, which leads to the <em>GIDL (Gate Induced Drain Leakage)</em> current.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100054"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199564","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A subranging nonuniform sampling memristive neural network-based analog-to-digital converter 一种基于子范围非均匀采样忆阻神经网络的模数转换器
Pub Date : 2023-07-01 DOI: 10.1016/j.memori.2023.100038
Hao You , Amirali Amirsoleimani , Jianxiong Xu , Mostafa Rahimi Azghadi , Roman Genov

This work presents a novel 4-bit subranging nonuniform sampling (NUS) memristive neural network-based analog-to-digital converter (ADC) with improved performance trade-off among speed, power, area, and accuracy. The proposed design preserves the memristive neural network calibration and utilizes a trainable memristor weight to adapt to device mismatch and increase accuracy. Rather than conventional binary searching, we adopt quaternary searching in the ADC to realize subranging architecture’s coarse and fine bits determination. A level-crossing nonuniform sampling (NUS) is introduced to the proposed ADC to enhance the ENOB under the same resolutions, power, and area consumption. Area and power consumption are reduced through circuit sharing between different stages of bit determination. The proposed 4-bit ADC achieves a highest ENOB of 5.96 and 5.6 at cut-off frequency (128 MHz) with power consumption of 0.515 mW and a figure of merit (FoM) of 82.95 fJ/conv.

这项工作提出了一种新的4位子范围非均匀采样(NUS)忆阻神经网络模数转换器(ADC),该转换器在速度、功率、面积和精度之间具有改进的性能权衡。所提出的设计保留了忆阻神经网络校准,并利用可训练的忆阻器权重来适应器件失配并提高精度。与传统的二进制搜索不同,我们在ADC中采用了四进制搜索来实现子范围结构的粗、细比特确定。在所提出的ADC中引入了电平交叉非均匀采样(NUS),以在相同的分辨率、功率和面积消耗下增强ENOB。通过比特确定的不同阶段之间的电路共享来减少面积和功耗。所提出的4位ADC在截止频率(128MHz)下实现了5.96和5.6的最高ENOB,功耗为0.515mW,品质因数(FoM)为82.95fJ/conv。
{"title":"A subranging nonuniform sampling memristive neural network-based analog-to-digital converter","authors":"Hao You ,&nbsp;Amirali Amirsoleimani ,&nbsp;Jianxiong Xu ,&nbsp;Mostafa Rahimi Azghadi ,&nbsp;Roman Genov","doi":"10.1016/j.memori.2023.100038","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100038","url":null,"abstract":"<div><p>This work presents a novel 4-bit subranging nonuniform sampling (NUS) memristive neural network-based analog-to-digital converter (ADC) with improved performance trade-off among speed, power, area, and accuracy. The proposed design preserves the memristive neural network calibration and utilizes a trainable memristor weight to adapt to device mismatch and increase accuracy. Rather than conventional binary searching, we adopt quaternary searching in the ADC to realize subranging architecture’s coarse and fine bits determination. A level-crossing nonuniform sampling (NUS) is introduced to the proposed ADC to enhance the ENOB under the same resolutions, power, and area consumption. Area and power consumption are reduced through circuit sharing between different stages of bit determination. The proposed 4-bit ADC achieves a highest ENOB of 5.96 and 5.6 at cut-off frequency (128 <span><math><mi>MHz</mi></math></span>) with power consumption of 0.515 <span><math><mi>mW</mi></math></span> and a figure of merit (FoM) of 82.95 <span><math><mi>fJ/conv</mi></math></span>.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100038"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
Flux-charge analysis and experimental verification of a parallel Memristor–Capacitor circuit 并联忆阻器-电容器电路的通量电荷分析与实验验证
Pub Date : 2023-07-01 DOI: 10.1016/j.memori.2023.100043
M.A. Carrasco-Aguilar, F.E. Morales-López, C. Sánchez-López, Rocio Ochoa-Montiel

In this article, the flux-charge analysis method is applied to obtain the theoretical response of the voltage generated in a parallel Memristor–Capacitor (M–C) circuit excited by an input pulse generator with a 100 kHz frequency, 5 V amplitude and a 50 ohms output impedance. The theoretical solution of the nonlinear ordinary differential equation that results when applying the method is reached by a numerical method. As a memristive circuit, a previously reported floating memristor emulator was used. The response obtained is compared with the experimental response, generating evidence that the applied analysis method yields an acceptable margin of error with regards to the experimental results obtained, contrasting with other similar reports, where the analyzes are based on theoretical memristive models, and show simulation results only. Summary, the paper would contribute to the analysis and experimental verification of the parallel M–C circuit subjected to a real switched exciting source, using a memristance equation established in an emulator that is different from the equations commonly used in the literature.

在本文中,应用通量电荷分析方法来获得由频率为100 kHz、振幅为5 V、输出阻抗为50欧姆的输入脉冲发生器激励的并联忆阻器-电容器(M–C)电路中产生的电压的理论响应。应用该方法得到的非线性常微分方程的理论解是通过数值方法得到的。作为忆阻电路,使用了先前报道的浮动忆阻器模拟器。将所获得的响应与实验响应进行比较,从而证明所应用的分析方法相对于所获得的实验结果产生了可接受的误差范围,与其他类似报告形成对比,在其他类似报告中,分析基于理论忆阻模型,仅显示模拟结果。总之,本文将使用模拟器中建立的与文献中常用的方程不同的忆阻方程,对实际开关激励源下的并联M–C电路进行分析和实验验证。
{"title":"Flux-charge analysis and experimental verification of a parallel Memristor–Capacitor circuit","authors":"M.A. Carrasco-Aguilar,&nbsp;F.E. Morales-López,&nbsp;C. Sánchez-López,&nbsp;Rocio Ochoa-Montiel","doi":"10.1016/j.memori.2023.100043","DOIUrl":"https://doi.org/10.1016/j.memori.2023.100043","url":null,"abstract":"<div><p>In this article, the flux-charge analysis method is applied to obtain the theoretical response of the voltage generated in a parallel Memristor–Capacitor (M–C) circuit excited by an input pulse generator with a 100 kHz frequency, 5 V amplitude and a 50 ohms output impedance. The theoretical solution of the nonlinear ordinary differential equation that results when applying the method is reached by a numerical method. As a memristive circuit, a previously reported floating memristor emulator was used. The response obtained is compared with the experimental response, generating evidence that the applied analysis method yields an acceptable margin of error with regards to the experimental results obtained, contrasting with other similar reports, where the analyzes are based on theoretical memristive models, and show simulation results only. Summary, the paper would contribute to the analysis and experimental verification of the parallel M–C circuit subjected to a real switched exciting source, using a memristance equation established in an emulator that is different from the equations commonly used in the literature.</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100043"},"PeriodicalIF":0.0,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"50199628","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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