Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931632
Min-Chul Park, G. Yang, Joon-Sung Yang, Keun-Ho Lee, Young-Kwan Park
Device and circuit lifetime is investigated for poly silicon gated MOSFET. New findings are: (1) More than 1 order lifetime is increased by quantifying the influence of poly depletion effect (PDE) and accumulated trap charge effect (ATCE). (2) We demonstrate that conventional lifetime model produce an incorrect and reverse lifetime result for each degradation data measured by fast and slow method. (3) We evaluate the impact on circuit parameter, propagation delay time (tPD), degradation in the light of new findings.
{"title":"New perspective on lifetime prediction approach for BTI and HCI stressed device and its impact on circuit lifetime","authors":"Min-Chul Park, G. Yang, Joon-Sung Yang, Keun-Ho Lee, Young-Kwan Park","doi":"10.1109/SISPAD.2014.6931632","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931632","url":null,"abstract":"Device and circuit lifetime is investigated for poly silicon gated MOSFET. New findings are: (1) More than 1 order lifetime is increased by quantifying the influence of poly depletion effect (PDE) and accumulated trap charge effect (ATCE). (2) We demonstrate that conventional lifetime model produce an incorrect and reverse lifetime result for each degradation data measured by fast and slow method. (3) We evaluate the impact on circuit parameter, propagation delay time (tPD), degradation in the light of new findings.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"110 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124682538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931639
K. Rupp, M. Bina, Y. Wimmer, A. Jungel, T. Crasser
Although the traditional finite volume scheme based on boxes obtained from the dual Voronoi grid has been employed successfully for classical semiconductor device simulation for decades, certain drawbacks such as the required Delaunay property of the underlying mesh limit its applicability for two-and particularly three-dimensional device simulations on unstructured meshes. We propose a discretization based on mesh cells rather than dual boxes around vertices, which circumvents the Delaunay requirement, yet preserves all the important features of the traditional method such as exact current conservation. The applicability of our method is demonstrated for classical and semiclassical models to tackle current engineering problems: We consider three-dimensional drift-diffusion simulations of geometric variations of the fin in a FinFET and present results from spatially two-dimensional simulations of a high-voltage nLDMOS device based on spherical harmonics expansions for direct solutions of the Boltzmann transport equation.
{"title":"Cell-centered finite volume schemes for semiconductor device simulation","authors":"K. Rupp, M. Bina, Y. Wimmer, A. Jungel, T. Crasser","doi":"10.1109/SISPAD.2014.6931639","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931639","url":null,"abstract":"Although the traditional finite volume scheme based on boxes obtained from the dual Voronoi grid has been employed successfully for classical semiconductor device simulation for decades, certain drawbacks such as the required Delaunay property of the underlying mesh limit its applicability for two-and particularly three-dimensional device simulations on unstructured meshes. We propose a discretization based on mesh cells rather than dual boxes around vertices, which circumvents the Delaunay requirement, yet preserves all the important features of the traditional method such as exact current conservation. The applicability of our method is demonstrated for classical and semiclassical models to tackle current engineering problems: We consider three-dimensional drift-diffusion simulations of geometric variations of the fin in a FinFET and present results from spatially two-dimensional simulations of a high-voltage nLDMOS device based on spherical harmonics expansions for direct solutions of the Boltzmann transport equation.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"377 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124708956","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931604
H. Mutoh
The physical models and algorithms of device simulation for ultra-high speed devices are proposed. The propagation of electromagnetic field induced by electrodes cannot be ignored for analyses of ultra-high speed devices. In order to obtain the consistent basic equations for the both of device and electromagnetic field propagation simulations, we newly introduce Nakanishi-Lautrup (NL) field of quantum electrodynamics (QED) to the electromagnetic field model. The models and algorithms are reported with some calculation results.
{"title":"Modelinig and algorithms of device simulation for ultra-high speed devices","authors":"H. Mutoh","doi":"10.1109/SISPAD.2014.6931604","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931604","url":null,"abstract":"The physical models and algorithms of device simulation for ultra-high speed devices are proposed. The propagation of electromagnetic field induced by electrodes cannot be ignored for analyses of ultra-high speed devices. In order to obtain the consistent basic equations for the both of device and electromagnetic field propagation simulations, we newly introduce Nakanishi-Lautrup (NL) field of quantum electrodynamics (QED) to the electromagnetic field model. The models and algorithms are reported with some calculation results.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125602851","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931569
Yijiao Wang, Peng Huang, Xiaoyan Liu, G. Du, Jinfeng Kang
A comprehensive time dependent three dimensional simulation framework for high-k degradation is developed. In this framework, the models that account for trap generation in high-k, capture/emission dynamic, and statistical variability are incorporated in the simulation. The influence of the trap generation model on distribution of traps, threshold voltage, and the amount of trapped charge is investigated in detail, thereby lay a solid foundation for predicting more accurate design margins at circuit/system level in the future.
{"title":"Time dependent 3-D statistical KMC simulation of high-k degradation including trap generation and electron capture/emission dynamic","authors":"Yijiao Wang, Peng Huang, Xiaoyan Liu, G. Du, Jinfeng Kang","doi":"10.1109/SISPAD.2014.6931569","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931569","url":null,"abstract":"A comprehensive time dependent three dimensional simulation framework for high-k degradation is developed. In this framework, the models that account for trap generation in high-k, capture/emission dynamic, and statistical variability are incorporated in the simulation. The influence of the trap generation model on distribution of traps, threshold voltage, and the amount of trapped charge is investigated in detail, thereby lay a solid foundation for predicting more accurate design margins at circuit/system level in the future.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"24 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133241248","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931566
A. Valsaraj, L. F. Register, S. Banerjee, Jiwon Chang
Monolayer transition metal dichalcogenides (TMDs) are novel gapped two-dimensional materials with unique electrical and optical properties. Here, we study the effect of dielectric oxide slabs on the electronic structure of monolayer MoS2 using density functional theory (DFT) calculations. We also have simulated the effects of O-vacancies in the first few layers of the oxide on the band structure of the MoS2-oxide system, showing here results for vacancies in topmost/MoS2-adjacent O layer.
{"title":"Density-functional-theory-based study of monolayer MoS2 on oxide","authors":"A. Valsaraj, L. F. Register, S. Banerjee, Jiwon Chang","doi":"10.1109/SISPAD.2014.6931566","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931566","url":null,"abstract":"Monolayer transition metal dichalcogenides (TMDs) are novel gapped two-dimensional materials with unique electrical and optical properties. Here, we study the effect of dielectric oxide slabs on the electronic structure of monolayer MoS2 using density functional theory (DFT) calculations. We also have simulated the effects of O-vacancies in the first few layers of the oxide on the band structure of the MoS2-oxide system, showing here results for vacancies in topmost/MoS2-adjacent O layer.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131340436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931584
K. Sonoda, E. Tsukuda, M. Tanizawa, K. Ishikawa, Y. Yamaguchi
The effect of hydrogen incorporation into nitrogen vacancies in silicon nitride on electron trap is analyzed using density functional theory method. A hydrogen atom is attached to a dangling bond which is well separated from other dangling bonds, whereas it is not attached to ones which strongly interact because of lattice distortion. An electron trap level caused by nitrogen vacancy becomes shallow by hydrogen incorporation. An electron is trapped in a deep level created by a silicon dangling bond before hydrogen incorporation, whereas it is trapped in a shallow level created by an anti-bonding state of a siliconsilicon bond after hydrogen incorporation. The simulation results qualitatively explain the experiment in which reduced hydrogen content in silicon nitride shows superior retention characteristics of the programmed state.
{"title":"An analysis of the effect of hydrogen incorporation on electron traps in silicon nitride","authors":"K. Sonoda, E. Tsukuda, M. Tanizawa, K. Ishikawa, Y. Yamaguchi","doi":"10.1109/SISPAD.2014.6931584","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931584","url":null,"abstract":"The effect of hydrogen incorporation into nitrogen vacancies in silicon nitride on electron trap is analyzed using density functional theory method. A hydrogen atom is attached to a dangling bond which is well separated from other dangling bonds, whereas it is not attached to ones which strongly interact because of lattice distortion. An electron trap level caused by nitrogen vacancy becomes shallow by hydrogen incorporation. An electron is trapped in a deep level created by a silicon dangling bond before hydrogen incorporation, whereas it is trapped in a shallow level created by an anti-bonding state of a siliconsilicon bond after hydrogen incorporation. The simulation results qualitatively explain the experiment in which reduced hydrogen content in silicon nitride shows superior retention characteristics of the programmed state.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133900903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931570
S. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser
We present and validate a novel physics-based model for hot-carrier degradation. The model incorporates such essential ingredients as a superposition of the multivibrational bond dissociation process and single-carrier mechanism, dispersion of the bond-breakage energy, interaction of the electric field and the dipole moment of the bond, and electron-electron scattering. The main requirement is that the model has to be able to cover HCD observed in a family of MOSFETs of identical architecture but with different gate lengths under diverse stress conditions using a unique set of parameters.
{"title":"A predictive physical model for hot-carrier degradation in ultra-scaled MOSFETs","authors":"S. Tyaginov, M. Bina, J. Franco, Y. Wimmer, D. Osintsev, B. Kaczer, T. Grasser","doi":"10.1109/SISPAD.2014.6931570","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931570","url":null,"abstract":"We present and validate a novel physics-based model for hot-carrier degradation. The model incorporates such essential ingredients as a superposition of the multivibrational bond dissociation process and single-carrier mechanism, dispersion of the bond-breakage energy, interaction of the electric field and the dipole moment of the bond, and electron-electron scattering. The main requirement is that the model has to be able to cover HCD observed in a family of MOSFETs of identical architecture but with different gate lengths under diverse stress conditions using a unique set of parameters.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123842174","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931625
X. Mou, L. Register, S. Banerjee
It has been proposed that superfluid excitonic condensates may be possible in dielectrically separated graphene layers or other two-dimensional materials. This possibility was the basis for the proposed ultra-low power Bilayer pseudoSpin Field-effect Transistor (BiSFET). Previously, we developed an atomistic tight-binding quantum transport simulator, including the non-local exchange interaction, and used it to demonstrate the essential excitonic superfluid transport physics which underlies the proposed BiSFET in presence of such a condensate. Here we report on extension of that work to analyze dependencies on device scaling and the condensate strength of BiSFET performance and required device parameters including interlayer conductance, and critical current and voltage.
{"title":"Interplay among Bilayer pseudoSpin field-effect transistor (BiSFET) performance, BiSFET scaling and condensate strength","authors":"X. Mou, L. Register, S. Banerjee","doi":"10.1109/SISPAD.2014.6931625","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931625","url":null,"abstract":"It has been proposed that superfluid excitonic condensates may be possible in dielectrically separated graphene layers or other two-dimensional materials. This possibility was the basis for the proposed ultra-low power Bilayer pseudoSpin Field-effect Transistor (BiSFET). Previously, we developed an atomistic tight-binding quantum transport simulator, including the non-local exchange interaction, and used it to demonstrate the essential excitonic superfluid transport physics which underlies the proposed BiSFET in presence of such a condensate. Here we report on extension of that work to analyze dependencies on device scaling and the condensate strength of BiSFET performance and required device parameters including interlayer conductance, and critical current and voltage.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129547349","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931606
A. Tallarico, P. Magnone, E. Sangiorgi, C. Fiegna
In this paper, we present a study of the self-heating effects in GaN-based power devices during static and dynamic operation mode by means of Sentaurus TCAD. A physical model interface (PMI), accounting for the temperature dependence of the thermal boundary resistance (TBR), has been implemented in the simulator in order to realistically model self-heating effects. In particular, we take into account for the TBR associated to the nucleation layer between GaN and SiC substrate. Moreover, the thermal contribution of the mutual heating among adjacent devices has been considered. Finally, we have investigated the influence of the temperature on the surface charges trapping and de-trapping phenomena showing two different traps occupancy transients. While one of the two occurs also in the isothermal condition, the second one is temperature activated.
{"title":"Modeling self-heating effects in AlGaN/GaN electronic devices during static and dynamic operation mode","authors":"A. Tallarico, P. Magnone, E. Sangiorgi, C. Fiegna","doi":"10.1109/SISPAD.2014.6931606","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931606","url":null,"abstract":"In this paper, we present a study of the self-heating effects in GaN-based power devices during static and dynamic operation mode by means of Sentaurus TCAD. A physical model interface (PMI), accounting for the temperature dependence of the thermal boundary resistance (TBR), has been implemented in the simulator in order to realistically model self-heating effects. In particular, we take into account for the TBR associated to the nucleation layer between GaN and SiC substrate. Moreover, the thermal contribution of the mutual heating among adjacent devices has been considered. Finally, we have investigated the influence of the temperature on the surface charges trapping and de-trapping phenomena showing two different traps occupancy transients. While one of the two occurs also in the isothermal condition, the second one is temperature activated.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117282024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931592
He Wang, Wenshen Li, Jinyu Zhang, Yan Wang, Zhiping Yu
Conditions for terahertz (THz) radiation due to the plasma-wave instability in the channel of HEMTs are re-examined by considering the electron viscosity in carrier hydrodynamic transport. Not only the DC output I-V characteristics are affected, but also the window for plasma-wave instability is altered by the term with viscosity in the transport equation. The solution procedure and numerical study are presented. The analysis has been applied to recent experimental work and it is shown that the device parameters required for plasma-wave instability are more stringent than those reported in the up-to-date THz emission experiments.
{"title":"The role of electron viscosity on plasma-wave instability in HEMTs","authors":"He Wang, Wenshen Li, Jinyu Zhang, Yan Wang, Zhiping Yu","doi":"10.1109/SISPAD.2014.6931592","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931592","url":null,"abstract":"Conditions for terahertz (THz) radiation due to the plasma-wave instability in the channel of HEMTs are re-examined by considering the electron viscosity in carrier hydrodynamic transport. Not only the DC output I-V characteristics are affected, but also the window for plasma-wave instability is altered by the term with viscosity in the transport equation. The solution procedure and numerical study are presented. The analysis has been applied to recent experimental work and it is shown that the device parameters required for plasma-wave instability are more stringent than those reported in the up-to-date THz emission experiments.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"396 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124170907","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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