Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931612
Hong-hyun Park, Yang Lu, W. Choi, Young-tae Kim, Keun-Ho Lee, Youngkwan Park
This paper presents atomistic simulation results about the performance limits of electron mobility in SiGe-channel nFinFETs, where phonon- and alloy-scattering-limited mobility are calculated based on the empirical tight-binding and the valence force field methods without any mobility fitting parameters. The effect of the changes in the fin thickness and sidewall orientation, SiGe alloy mole fraction, and external stress on the low-field electron mobility is investigated.
{"title":"Atomistic simulations of phonon- and alloy-scattering-limited mobility in SiGe nFinFETs","authors":"Hong-hyun Park, Yang Lu, W. Choi, Young-tae Kim, Keun-Ho Lee, Youngkwan Park","doi":"10.1109/SISPAD.2014.6931612","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931612","url":null,"abstract":"This paper presents atomistic simulation results about the performance limits of electron mobility in SiGe-channel nFinFETs, where phonon- and alloy-scattering-limited mobility are calculated based on the empirical tight-binding and the valence force field methods without any mobility fitting parameters. The effect of the changes in the fin thickness and sidewall orientation, SiGe alloy mole fraction, and external stress on the low-field electron mobility is investigated.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125433368","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931581
T. Maiti, T. Hayashi, L. Chen, M. Miura-Mattausch, H. Mattausch
A physical compact charge carrier mobility model for undoped-body organic thin-film transistors (OTFTs) based on an analysis of the bias-dependent Fermi-energy movement in the band gap is reported. Mobility in localized- and extended-energy states predicts the current transport in week- and strong-inversion regimes, respectively. A hopping mobility model as a function of surface potential is developed to describe the carrier transport through localized trap states located in the band gap. The Poole-Frenkel field effect mechanism is considered to interpret the band-like carrier transport mechanism in extended energy states. Modeled results are compared with the measured DNTT-based high-performance OTFTs data to verify the model.
{"title":"Organic thin-film transistor compact model with accurate charge carrier mobility","authors":"T. Maiti, T. Hayashi, L. Chen, M. Miura-Mattausch, H. Mattausch","doi":"10.1109/SISPAD.2014.6931581","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931581","url":null,"abstract":"A physical compact charge carrier mobility model for undoped-body organic thin-film transistors (OTFTs) based on an analysis of the bias-dependent Fermi-energy movement in the band gap is reported. Mobility in localized- and extended-energy states predicts the current transport in week- and strong-inversion regimes, respectively. A hopping mobility model as a function of surface potential is developed to describe the carrier transport through localized trap states located in the band gap. The Poole-Frenkel field effect mechanism is considered to interpret the band-like carrier transport mechanism in extended energy states. Modeled results are compared with the measured DNTT-based high-performance OTFTs data to verify the model.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"176 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123344447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931561
Tetsuya Yamamoto, T. Sawai, K. Mizutani, N. Otsuka, E. Fujii, N. Horikawa, Y. Kanzawa
This paper presents a novel methodology to design a compact but precise SPICE (Simulation Program with Integrated Circuit Emphasis) model which reproduces complete current-voltage (I-V) characteristics of Silicon Carbide (SiC) power devices. The methodology is based on duality relation between one function for the forward I-V characteristics and its inverse function for the reverse I-V characteristics. The simulated and the measured results of static characteristics of DioMOS (Diode integrated SiC MOSFET) have proved that the reverse I-V characteristics are reproduced by the inverse function of the forward I-V characteristics. Moreover, universal applicability of the proposed methodology is proved by other commercially supplied SiC power devices as well.
本文提出了一种新颖的方法来设计一个紧凑而精确的SPICE (Simulation Program with Integrated Circuit Emphasis)模型，该模型可以再现碳化硅(SiC)功率器件的完整电流-电压(I-V)特性。该方法基于正向I-V特征的一个函数与反向I-V特征的逆函数之间的对偶关系。DioMOS(二极管集成SiC MOSFET)静态特性的仿真和实测结果证明，反向I-V特性是由正向I-V特性的反函数再现的。此外，所提出的方法的普遍适用性也被其他商业供应的碳化硅功率器件所证明。
{"title":"A novel duality-based modeling methodology for reverse current-voltage characteristics of SiC","authors":"Tetsuya Yamamoto, T. Sawai, K. Mizutani, N. Otsuka, E. Fujii, N. Horikawa, Y. Kanzawa","doi":"10.1109/SISPAD.2014.6931561","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931561","url":null,"abstract":"This paper presents a novel methodology to design a compact but precise SPICE (Simulation Program with Integrated Circuit Emphasis) model which reproduces complete current-voltage (I-V) characteristics of Silicon Carbide (SiC) power devices. The methodology is based on duality relation between one function for the forward I-V characteristics and its inverse function for the reverse I-V characteristics. The simulated and the measured results of static characteristics of DioMOS (Diode integrated SiC MOSFET) have proved that the reverse I-V characteristics are reproduced by the inverse function of the forward I-V characteristics. Moreover, universal applicability of the proposed methodology is proved by other commercially supplied SiC power devices as well.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126029808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931579
S. Sant, Qing-Tai Zhao, D. Buca, S. Mantl, A. Schenk
Among the alloys of Group IV semiconductors the Germanium-Tin (GeSn) alloy is particularly interesting as it exhibits a small and direct band gap for a certain range of Sn content. This feature can be exploited for high-performance tunnel FET (TFET) application. The small direct band gap enhances the band-to-band-tunneling (BTBT) rate which results in a high on-current. In order to reduce the off-state leakage, Silicon-Germanium-Tin (SiGeSn) alloys can be used in the drain region of the TFET. Addition of Si to GeSn increases the band gap of the alloy, thus reducing the ambipolar behavior. Therefore, the GeSn/SiGeSn hetero-structure system is a promising candidate for TFET application. In this work, the performance of GeSn/SiGeSn TFETs is studied by combining the empirical pseudopotential method (EPM) with 2D/3D technology-computer-aided-design (TCAD) simulations of realistic geometries.
{"title":"Analysis of GeSn-SiGeSn hetero-tunnel FETs","authors":"S. Sant, Qing-Tai Zhao, D. Buca, S. Mantl, A. Schenk","doi":"10.1109/SISPAD.2014.6931579","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931579","url":null,"abstract":"Among the alloys of Group IV semiconductors the Germanium-Tin (GeSn) alloy is particularly interesting as it exhibits a small and direct band gap for a certain range of Sn content. This feature can be exploited for high-performance tunnel FET (TFET) application. The small direct band gap enhances the band-to-band-tunneling (BTBT) rate which results in a high on-current. In order to reduce the off-state leakage, Silicon-Germanium-Tin (SiGeSn) alloys can be used in the drain region of the TFET. Addition of Si to GeSn increases the band gap of the alloy, thus reducing the ambipolar behavior. Therefore, the GeSn/SiGeSn hetero-structure system is a promising candidate for TFET application. In this work, the performance of GeSn/SiGeSn TFETs is studied by combining the empirical pseudopotential method (EPM) with 2D/3D technology-computer-aided-design (TCAD) simulations of realistic geometries.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126609309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931563
D. P. Ettisserry, N. Goldsman, A. Akturk, A. Lelis
In this work, we use density functional theory-based calculations to study the hole trapping properties of single carbon-related defects in silicon dioxide. We show that such interstitials are stable in the carboxyl configuration, where the interstitial carbon atom remains three-fold coordinated with chemical bonds to two Si atoms and an oxygen atom (Si-[C=O]-Si). Using formation energy calculations, we observed a +2 to neutral charge transition level for carboxyl defect within the 4H-SiC bandgap. This leads us to propose that carboxyl defects are likely to act as switching oxide border hole traps in the oxide and contribute to threshold voltage instabilities in a 4H-SiC MOSFET. Thus, we provide an additional candidate to the traditional oxygen vacancy hole traps in 4H-SiC MOS systems. The atomic structures of the defect in various charge states are presented. The stability-providing mechanism for the carboxyl defect in the doubly positive state is found to be the puckering of the Si atom, as in the case of positively charged oxygen vacancy hole traps.
{"title":"Effects of carbon-related oxide defects on the reliability of 4H-SiC MOSFETs","authors":"D. P. Ettisserry, N. Goldsman, A. Akturk, A. Lelis","doi":"10.1109/SISPAD.2014.6931563","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931563","url":null,"abstract":"In this work, we use density functional theory-based calculations to study the hole trapping properties of single carbon-related defects in silicon dioxide. We show that such interstitials are stable in the carboxyl configuration, where the interstitial carbon atom remains three-fold coordinated with chemical bonds to two Si atoms and an oxygen atom (Si-[C=O]-Si). Using formation energy calculations, we observed a +2 to neutral charge transition level for carboxyl defect within the 4H-SiC bandgap. This leads us to propose that carboxyl defects are likely to act as switching oxide border hole traps in the oxide and contribute to threshold voltage instabilities in a 4H-SiC MOSFET. Thus, we provide an additional candidate to the traditional oxygen vacancy hole traps in 4H-SiC MOS systems. The atomic structures of the defect in various charge states are presented. The stability-providing mechanism for the carboxyl defect in the doubly positive state is found to be the puckering of the Si atom, as in the case of positively charged oxygen vacancy hole traps.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114198228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931593
Z. Stanojević, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina
The momentum relaxation time (MRT) is widely used to simplify low-field mobility calculations including anisotropic scattering processes. Although not always fully justified, it has been very practical in simulating transport in bulk and in low-dimensional carrier gases alike. We review the assumptions behind the MRT, quantify the error introduced by its usage for low-dimensional carrier gases, and point out its weakness in accounting for inter-subband interaction, occurring specifically at low inversion densities.
{"title":"On the validity of momentum relaxation time in low-dimensional carrier gases","authors":"Z. Stanojević, O. Baumgartner, M. Karner, L. Filipovic, C. Kernstock, H. Kosina","doi":"10.1109/SISPAD.2014.6931593","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931593","url":null,"abstract":"The momentum relaxation time (MRT) is widely used to simplify low-field mobility calculations including anisotropic scattering processes. Although not always fully justified, it has been very practical in simulating transport in bulk and in low-dimensional carrier gases alike. We review the assumptions behind the MRT, quantify the error introduced by its usage for low-dimensional carrier gases, and point out its weakness in accounting for inter-subband interaction, occurring specifically at low inversion densities.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127665747","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931565
Yen-Tien Tung, E. Chen, T. Shen, Y. Okuno, Chung-Cheng Wu, Jeff Wu, Carlos H. Díaz
In this paper, a realistic atomic model is used to study the atomic ordering effect on electronic structures of Si0.5Ge0.5. The hybrid density functional theory (DFT), HSE06, is chosen as the methodology. The calculated bandgap and effective masses of Si and Ge at various symmetry points are first validated by the reported experimental data and empirical pseudo-potential method (EPM) calculations. The study of two different Si0.5Ge0.5 atomic configurations shows that the SiSi-GeGe case is more stable than SiGe-SiGe (RS2 structure). In addition, the electron effective masses of the former one are larger than those of the latter one, and those calculated by EPM with virtual crystal approximation (VCA). This large electron effective mass is attributed to the localized electron orbital of the lowest anti-bonding state in the SiSi-GeGe case which leads to a flat E-k curve. However, no obvious ordering effect on hole effective mass is found.
{"title":"Atomic ordering effect on SiGe electronic structure","authors":"Yen-Tien Tung, E. Chen, T. Shen, Y. Okuno, Chung-Cheng Wu, Jeff Wu, Carlos H. Díaz","doi":"10.1109/SISPAD.2014.6931565","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931565","url":null,"abstract":"In this paper, a realistic atomic model is used to study the atomic ordering effect on electronic structures of Si0.5Ge0.5. The hybrid density functional theory (DFT), HSE06, is chosen as the methodology. The calculated bandgap and effective masses of Si and Ge at various symmetry points are first validated by the reported experimental data and empirical pseudo-potential method (EPM) calculations. The study of two different Si0.5Ge0.5 atomic configurations shows that the SiSi-GeGe case is more stable than SiGe-SiGe (RS2 structure). In addition, the electron effective masses of the former one are larger than those of the latter one, and those calculated by EPM with virtual crystal approximation (VCA). This large electron effective mass is attributed to the localized electron orbital of the lowest anti-bonding state in the SiSi-GeGe case which leads to a flat E-k curve. However, no obvious ordering effect on hole effective mass is found.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"106 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128136487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931586
R. Ishida, S. Koba, H. Tsuchiya, Y. Kamakura, N. Mori, S. Uno, M. Ogawa
In this study, we have developed an evaluation tool of quasi-ballistic transport parameters in realistic devices, to clarify practical benefits of downscaling MOSFETs into ultimate physical scaling limit. It is found that ballistic transport in double-gate (DG) MOSFETs is enhanced due to the channel length (Lch) scaling until Lch = 10 nm, but when Lch is further scaled to less than 10 nm using TSi = Lch/3 scaling rule, where TSi is the channel thickness, surface roughness scattering intensified by spatial fluctuation of quantized subbands drastically degrades ballistic transport. Furthermore, on-current increase or decrease of ultra-scaled DG MOSFETs is found to be basically determined by a backscattering coefficient R. Gate and drain bias voltage dependencies of ballisticity are also evaluated.
{"title":"Extraction of quasi-ballistic transport parameters in Si double-gate MOSFETs based on Monte Carlo method","authors":"R. Ishida, S. Koba, H. Tsuchiya, Y. Kamakura, N. Mori, S. Uno, M. Ogawa","doi":"10.1109/SISPAD.2014.6931586","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931586","url":null,"abstract":"In this study, we have developed an evaluation tool of quasi-ballistic transport parameters in realistic devices, to clarify practical benefits of downscaling MOSFETs into ultimate physical scaling limit. It is found that ballistic transport in double-gate (DG) MOSFETs is enhanced due to the channel length (Lch) scaling until Lch = 10 nm, but when Lch is further scaled to less than 10 nm using TSi = Lch/3 scaling rule, where TSi is the channel thickness, surface roughness scattering intensified by spatial fluctuation of quantized subbands drastically degrades ballistic transport. Furthermore, on-current increase or decrease of ultra-scaled DG MOSFETs is found to be basically determined by a backscattering coefficient R. Gate and drain bias voltage dependencies of ballisticity are also evaluated.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133992652","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931605
Takahisa Tanaka, K. Itoh
Effects of the diameter on the drain current of uniaxially strained Si nanowire (NW) MOSFETs are investigated. Based on the deterministic solution of the multi-subband Boltzmann transport equation, the drain current is calculated considering the intravalley acoustic phonon scatterings, intervalley phonon scatterings and interface roughness scatterings. We found 3 nm diameter [110] oriented Si NW MOSFETs shows ~2X drain current enhancement by the 1% uniaxial tensile strain.
{"title":"Diameter dependence of scattering limited transport properties of Si nanowire MOSFETs under uniaxial tensile strain","authors":"Takahisa Tanaka, K. Itoh","doi":"10.1109/SISPAD.2014.6931605","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931605","url":null,"abstract":"Effects of the diameter on the drain current of uniaxially strained Si nanowire (NW) MOSFETs are investigated. Based on the deterministic solution of the multi-subband Boltzmann transport equation, the drain current is calculated considering the intravalley acoustic phonon scatterings, intervalley phonon scatterings and interface roughness scatterings. We found 3 nm diameter [110] oriented Si NW MOSFETs shows ~2X drain current enhancement by the 1% uniaxial tensile strain.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"11 1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114548881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931596
D. Osintsev, V. Sverdlov, T. Windbacher, S. Selberherr
Because of an ongoing shift to FinFETs/ultra-thin body SOI based devices for the 22nm node and beyond, mobility enhancement in such structures is an important issue. Stress engineering used by the semiconductor industry to boost mobility was predicted to become less efficient in ultra-thin SOI structures due to the less pronounced dependence of the transport effective mass on strain. Using the k · p Hamiltonian which accurately describes the wave functions of electrons in silicon in the presence of strain and spin-orbit interaction, we show that the wave functions and the matrix elements' dependences on strain compensate the weaker dependence of the effective mass, which results in an almost two-fold mobility increase even in ultra-thin (001) SOI films under tensile [110] stress. In addition, we demonstrate that the spin relaxation rate due to surface roughness and phonon scattering is also efficiently suppressed by an order of magnitude by applying tensile stress, which makes SOI structures attractive for spin-driven applications.
{"title":"Increasing mobility and spin lifetime with shear strain in thin silicon films","authors":"D. Osintsev, V. Sverdlov, T. Windbacher, S. Selberherr","doi":"10.1109/SISPAD.2014.6931596","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931596","url":null,"abstract":"Because of an ongoing shift to FinFETs/ultra-thin body SOI based devices for the 22nm node and beyond, mobility enhancement in such structures is an important issue. Stress engineering used by the semiconductor industry to boost mobility was predicted to become less efficient in ultra-thin SOI structures due to the less pronounced dependence of the transport effective mass on strain. Using the k · p Hamiltonian which accurately describes the wave functions of electrons in silicon in the presence of strain and spin-orbit interaction, we show that the wave functions and the matrix elements' dependences on strain compensate the weaker dependence of the effective mass, which results in an almost two-fold mobility increase even in ultra-thin (001) SOI films under tensile [110] stress. In addition, we demonstrate that the spin relaxation rate due to surface roughness and phonon scattering is also efficiently suppressed by an order of magnitude by applying tensile stress, which makes SOI structures attractive for spin-driven applications.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129965107","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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