Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931564
S. Markov, C. Yam, Guanhua Chen, B. Aradi, G. Penazzi, T. Frauenheim
We report a milestone in device modeling whereby a planar MOSFET with extremely thin silicon on insulator channel is simulated at the atomic level, including significant parts of the gate and buried oxides explicitly in the simulation domain, in ab initio fashion, i.e without material or geometrical parameters. We use the density-functional-based tight-binding formalism for constructing the device Hamiltonian, and non-equilibrium Green's functions formalism for calculating electron current. Simulations of Si/SiO2 super-cells agree very well with experimentally observed band-structure phenomena in SiO2-confined sub-6 nm thick Si films. Device simulations of ETSOI MOSFET with 3 nm channel length and sub-nm channel thickness also agree well with reported measurements of the transfer characteristics of a similar transistor.
{"title":"Towards atomic level simulation of electron devices including the semiconductor-oxide interface","authors":"S. Markov, C. Yam, Guanhua Chen, B. Aradi, G. Penazzi, T. Frauenheim","doi":"10.1109/SISPAD.2014.6931564","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931564","url":null,"abstract":"We report a milestone in device modeling whereby a planar MOSFET with extremely thin silicon on insulator channel is simulated at the atomic level, including significant parts of the gate and buried oxides explicitly in the simulation domain, in ab initio fashion, i.e without material or geometrical parameters. We use the density-functional-based tight-binding formalism for constructing the device Hamiltonian, and non-equilibrium Green's functions formalism for calculating electron current. Simulations of Si/SiO2 super-cells agree very well with experimentally observed band-structure phenomena in SiO2-confined sub-6 nm thick Si films. Device simulations of ETSOI MOSFET with 3 nm channel length and sub-nm channel thickness also agree well with reported measurements of the transfer characteristics of a similar transistor.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133562948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931594
M. Aldegunde, K. Kalna
Particle-mesh coupling in ensemble Monte Carlo simulations of semiconductor devices results in unphysical self-forces when using unstructured meshes to describe the device geometry. We develop a correction to the driving electric field and show that self-forces can be virtually eliminated on a finite element mesh at a small additional computational cost. The developed methodology is included into a self-consistent 3D finite element Monte Carlo device simulator. We simulate an isolated particle and show the kinetic energy conservation down to a magnitude of 10-10 meV. The methodology is applied to a 10.7 nm gate length FinFET simulation and we find that for a large enough ensemble of particles, the impact of self-forces on the final ID-VG is almost negligible.
{"title":"Self-forces in 3D finite element Monte Carlo simulations of a 10.7 nm gate length SOI FinFET","authors":"M. Aldegunde, K. Kalna","doi":"10.1109/SISPAD.2014.6931594","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931594","url":null,"abstract":"Particle-mesh coupling in ensemble Monte Carlo simulations of semiconductor devices results in unphysical self-forces when using unstructured meshes to describe the device geometry. We develop a correction to the driving electric field and show that self-forces can be virtually eliminated on a finite element mesh at a small additional computational cost. The developed methodology is included into a self-consistent 3D finite element Monte Carlo device simulator. We simulate an isolated particle and show the kinetic energy conservation down to a magnitude of 10-10 meV. The methodology is applied to a 10.7 nm gate length FinFET simulation and we find that for a large enough ensemble of particles, the impact of self-forces on the final ID-VG is almost negligible.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128856585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931635
K. Mitsubayashi
A soft contact-lens amperometric glucose sensor as novel non-invasive device of body sensor network was fabricated and tested. Also, the sensor was utilized to tear glucose monitoring. The sensor was constructed by immobilizing GOD onto a flexible oxygen electrode, which was fabricated using “Soft-MEMS” techniques onto a functional polymer membrane. In purpose of bioinstrumentation, adhesive agents were not used for constructing the flexible biosensor. Linear relationship between glucose concentration and output current was obtained in a range of 0.039-0.537 mmol/l. Current dependences on pH and temperature were also evaluated. The current was largest at pH 7.0 and the current increased when temperature increased. This indicates that the output current depends on enzyme activity. Based on the basic characteristics investigation, the glucose sensor was applied to measurement of glucose in tear fluids on an eye site of a Japan white rabbit. The change of tear glucose level induced by oral-administration of glucose was monitored as a current change of the sensor attached on the eye site. In this investigation, the tear glucose level varied from 0.2 mmol/l to 0.5 mmol/l. Although there was a delay of several tens of minutes towards blood sugar level, it is considered to be possible that non-invasive continuous glucose monitoring can be realized using the flexible biosensor.
{"title":"Novel biosensing devices for medical applications Soft contact-lens sensors for monitoring tear sugar","authors":"K. Mitsubayashi","doi":"10.1109/SISPAD.2014.6931635","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931635","url":null,"abstract":"A soft contact-lens amperometric glucose sensor as novel non-invasive device of body sensor network was fabricated and tested. Also, the sensor was utilized to tear glucose monitoring. The sensor was constructed by immobilizing GOD onto a flexible oxygen electrode, which was fabricated using “Soft-MEMS” techniques onto a functional polymer membrane. In purpose of bioinstrumentation, adhesive agents were not used for constructing the flexible biosensor. Linear relationship between glucose concentration and output current was obtained in a range of 0.039-0.537 mmol/l. Current dependences on pH and temperature were also evaluated. The current was largest at pH 7.0 and the current increased when temperature increased. This indicates that the output current depends on enzyme activity. Based on the basic characteristics investigation, the glucose sensor was applied to measurement of glucose in tear fluids on an eye site of a Japan white rabbit. The change of tear glucose level induced by oral-administration of glucose was monitored as a current change of the sensor attached on the eye site. In this investigation, the tear glucose level varied from 0.2 mmol/l to 0.5 mmol/l. Although there was a delay of several tens of minutes towards blood sugar level, it is considered to be possible that non-invasive continuous glucose monitoring can be realized using the flexible biosensor.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114600350","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931549
A. Benvenuti, A. Ghetti, A. Mauri, Haijun Liu, C. Mouli
We briefly discuss the evolution of Non-Volatile Memory (NVM) technology in term of macro-trends and their implications for modeling activities in an industrial R&D environment. Some examples of difficult modeling issues for different NVM techologies are mentioned, and finally both present needs and future challanges are critically reviewed.
{"title":"Current status and future prospects of non-volatile memory modeling","authors":"A. Benvenuti, A. Ghetti, A. Mauri, Haijun Liu, C. Mouli","doi":"10.1109/SISPAD.2014.6931549","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931549","url":null,"abstract":"We briefly discuss the evolution of Non-Volatile Memory (NVM) technology in term of macro-trends and their implications for modeling activities in an industrial R&D environment. Some examples of difficult modeling issues for different NVM techologies are mentioned, and finally both present needs and future challanges are critically reviewed.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125611718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931601
R. Jain, H. Rucker, N. Mohapatra
We present a TCAD simulation study for Silicon MOSFET terahertz detectors. The impact of transistor doping profile optimization on detector performance is analyzed. Time-domain simulations are used to extract the DC response to THz excitations and to explore the impact of different device parasitics. It is shown that the DC response can be improved by (1) minimizing the source-side parasitic resistance (2) maximizing the drain-side parasitic resistance and (3) minimizing the drain-to-body and channel-to-body capacitances.
{"title":"Optimization of Si MOS transistors for THz detection using TCAD simulation","authors":"R. Jain, H. Rucker, N. Mohapatra","doi":"10.1109/SISPAD.2014.6931601","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931601","url":null,"abstract":"We present a TCAD simulation study for Silicon MOSFET terahertz detectors. The impact of transistor doping profile optimization on detector performance is analyzed. Time-domain simulations are used to extract the DC response to THz excitations and to explore the impact of different device parasitics. It is shown that the DC response can be improved by (1) minimizing the source-side parasitic resistance (2) maximizing the drain-side parasitic resistance and (3) minimizing the drain-to-body and channel-to-body capacitances.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126041789","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931590
H. Hayashi, V. Axelrad, M. Mochizuki, T. Hayashi, T. Maruyama, Kazuya Suzuki, Y. Nagatomo
This paper presents the optimization of the two bit flash memory P-channel cell structure using efficient 2D write and erase model. Our proposed cell structure stores charge at either Source and/or Drain sides of the gate in an SiN film and is based on method of programming by DAHE and erasing by FN tunneling. It is found that expansion of cell window and the improvement of erase characteristic depend on the optimization of the gate-film overlap under gate of the SiN film.
{"title":"Optimization of program and erase characteristics of two bit flash memory P-channel cell structure using TCAD","authors":"H. Hayashi, V. Axelrad, M. Mochizuki, T. Hayashi, T. Maruyama, Kazuya Suzuki, Y. Nagatomo","doi":"10.1109/SISPAD.2014.6931590","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931590","url":null,"abstract":"This paper presents the optimization of the two bit flash memory P-channel cell structure using efficient 2D write and erase model. Our proposed cell structure stores charge at either Source and/or Drain sides of the gate in an SiN film and is based on method of programming by DAHE and erasing by FN tunneling. It is found that expansion of cell window and the improvement of erase characteristic depend on the optimization of the gate-film overlap under gate of the SiN film.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130466870","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931573
D. Rideau, F. Monsieur, O. Nier, Y. Niquet, J. Lacord, V. Quenette, G. Mugny, G. Hiblot, G. Gouget, M. Quoirin, L. Silvestri, F. Nallet, C. Tavernier, H. Jaouen
This paper investigates the mobility `apparent' channel length dependency in nanometric devices. Based on a series of current and capacitance measurements, we report clear (VG)-1 dependencies of the access resistance in Bulk but also in FDSOI devices. We show that the μeff-Leff degradation observed at small L can be inferred from this gate-bias dependency. By means of numerical simulation, we show that in the near-spacer-region injection velocity saturation occurs and the spreading resistance exhibits a (VG)-1 dependency. A comparison between Bulk and FDSOI devices clearly shows that even in the absence of LDD-counter-doping (pocket), and channel doping, the near-spacer-region resistance is far to be negligible and can contribute up to ~30% of the total resistance (rTOT =VD/IDS) of a ~22nm device.
{"title":"Experimental and theoretical investigation of the ‘apparent’ mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance","authors":"D. Rideau, F. Monsieur, O. Nier, Y. Niquet, J. Lacord, V. Quenette, G. Mugny, G. Hiblot, G. Gouget, M. Quoirin, L. Silvestri, F. Nallet, C. Tavernier, H. Jaouen","doi":"10.1109/SISPAD.2014.6931573","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931573","url":null,"abstract":"This paper investigates the mobility `apparent' channel length dependency in nanometric devices. Based on a series of current and capacitance measurements, we report clear (V<sub>G</sub>)<sup>-1</sup> dependencies of the access resistance in Bulk but also in FDSOI devices. We show that the μ<sub>eff</sub>-L<sub>eff</sub> degradation observed at small L can be inferred from this gate-bias dependency. By means of numerical simulation, we show that in the near-spacer-region injection velocity saturation occurs and the spreading resistance exhibits a (V<sub>G</sub>)<sup>-1</sup> dependency. A comparison between Bulk and FDSOI devices clearly shows that even in the absence of LDD-counter-doping (pocket), and channel doping, the near-spacer-region resistance is far to be negligible and can contribute up to ~30% of the total resistance (r<sub>TOT</sub> =V<sub>D</sub>/I<sub>DS</sub>) of a ~22nm device.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130638156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931615
L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov
A thermal simulation module, based on the solution of the coupled Heat Flow, Poisson, and Current Continuity Equations, has been developed and implemented in the `atomistic' simulator GARAND to investigate the impact of self heating on FinFET DC operation. A progressive study of coupled electro-thermal simulation for FinFETs is presented. A new approximate formula for the reduced thermal conductivity due to phonon-boundary scattering in the fin is presented which considers both the fin height and the fin width, and is both position and temperature dependent. Simulation results for a SOI FinFET and a bulk FinFET example are compared and analysed.
{"title":"3D coupled electro-thermal FinFET simulations including the fin shape dependence of the thermal conductivity","authors":"L. Wang, A. Brown, M. Nedjalkov, C. Alexander, B. Cheng, C. Millar, A. Asenov","doi":"10.1109/SISPAD.2014.6931615","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931615","url":null,"abstract":"A thermal simulation module, based on the solution of the coupled Heat Flow, Poisson, and Current Continuity Equations, has been developed and implemented in the `atomistic' simulator GARAND to investigate the impact of self heating on FinFET DC operation. A progressive study of coupled electro-thermal simulation for FinFETs is presented. A new approximate formula for the reduced thermal conductivity due to phonon-boundary scattering in the fin is presented which considers both the fin height and the fin width, and is both position and temperature dependent. Simulation results for a SOI FinFET and a bulk FinFET example are compared and analysed.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134269872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931628
H. Carrillo-Nuñez, M. Bescond, E. Dib, N. Cavassilas, M. Lannoo
A three-dimensional self-consistent non-equilibrium Green's function approach is used to investigate the influence of phonon scattering in single dopant nanowire transistors. Phonon interactions are described within the self-consistent Born approximation in which both acoustic and optical phonons are included. Transport properties are then analyzed in the ballistic and scattering regimes. Ballistic results first confirm the current hysteresis due to two different screening mechanisms of the dopant reported by Mil'nikov et-al [1]. The transition between them is smoothed by the interactions with acoustic phonons which suppress the current hysteresis. Interestingly our findings also show a beneficial impact of the optical phonon interactions. They generate a phonon-assisted resonant tunneling from which can result a higher current than in the ballistic regime. Finally a temperature dependance analysis shows that the hysteresis should be restored at lower temperatures.
{"title":"Single dopant nanowire transistors: Influence of phonon scattering and temperature","authors":"H. Carrillo-Nuñez, M. Bescond, E. Dib, N. Cavassilas, M. Lannoo","doi":"10.1109/SISPAD.2014.6931628","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931628","url":null,"abstract":"A three-dimensional self-consistent non-equilibrium Green's function approach is used to investigate the influence of phonon scattering in single dopant nanowire transistors. Phonon interactions are described within the self-consistent Born approximation in which both acoustic and optical phonons are included. Transport properties are then analyzed in the ballistic and scattering regimes. Ballistic results first confirm the current hysteresis due to two different screening mechanisms of the dopant reported by Mil'nikov et-al [1]. The transition between them is smoothed by the interactions with acoustic phonons which suppress the current hysteresis. Interestingly our findings also show a beneficial impact of the optical phonon interactions. They generate a phonon-assisted resonant tunneling from which can result a higher current than in the ballistic regime. Finally a temperature dependance analysis shows that the hysteresis should be restored at lower temperatures.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133116679","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2014-10-23DOI: 10.1109/SISPAD.2014.6931619
F. Adamu-Lema, S. Amoroso, X. Wang, B. Cheng, L. Shifren, R. Aitken, S. Sinha, G. Yeric, A. Asenov
In this paper we discus results from `atomistic' and continuous simulation of decananometer scale bulk MOSFETs and FinFETs. We study the behaviour of important figures of merit including threshold voltage, off current and on current. We provide physical explanation for the origin of the discrepancies between the averaged values obtained from the statistical simulations and the results from the continuous doping simulation. Based on our analysis we clearly demonstrate that there are increasing errors in the doping distributions when device TCAD simulations are calibrated using continuous doping profiles. This questions the use of continuous doping profiles in the routine calibration and TCAD based optimisation of decananometer scale bulk MOSFETs and FinFET.
{"title":"The discrepancy between the uniform and variability aware atomistic TCAD simulations of decananometer bulk MOSFETs and FinFETs","authors":"F. Adamu-Lema, S. Amoroso, X. Wang, B. Cheng, L. Shifren, R. Aitken, S. Sinha, G. Yeric, A. Asenov","doi":"10.1109/SISPAD.2014.6931619","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931619","url":null,"abstract":"In this paper we discus results from `atomistic' and continuous simulation of decananometer scale bulk MOSFETs and FinFETs. We study the behaviour of important figures of merit including threshold voltage, off current and on current. We provide physical explanation for the origin of the discrepancies between the averaged values obtained from the statistical simulations and the results from the continuous doping simulation. Based on our analysis we clearly demonstrate that there are increasing errors in the doping distributions when device TCAD simulations are calibrated using continuous doping profiles. This questions the use of continuous doping profiles in the routine calibration and TCAD based optimisation of decananometer scale bulk MOSFETs and FinFET.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"516 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133236068","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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