Pub Date : 2014-09-01DOI: 10.1109/SISPAD.2014.6931634
T. Kato, T. Uemura, H. Matsuyama
Soft error simulations utilizing PHYSERD are presented. The comparison with the experimental data for 28 nm SRAM demonstrates that PHYSERD provides the high-accuracy estimation of soft error rate when combined with circuit simulation, while PHYSERD alone tends to overestimate soft error rate. We also analyze the contributions of transistors constituting SRAM and of secondary ions to soft error rate. We find that circuit simulation has a significant effect on these contributions and is essential to the prediction of soft error rate.
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Pub Date : 2014-07-08DOI: 10.1109/SISPAD.2014.6931613
A. Endoh, I. Watanabe, A. Kasamatsu, T. Mimura
We carried out Monte Carlo (MC) simulation of In0.52Al0.48As/In0.53Ga0.47As high electron mobility transistors (HEMTs) with various shape of buried gate. Especially, we examined the HEMT with a “realistic” buried gate in which the tip of gate foot is “round.” We found that the “effective” gate length is determined by the length of gate foot tip from the electron velocity profiles and electric field in the channel layer. Furthermore, the “round” tip of gate electrode is convenient to prevent breakdown.
{"title":"Monte Carlo simulation of InAlAs/InGaAs HEMTs with various shape of buried gate","authors":"A. Endoh, I. Watanabe, A. Kasamatsu, T. Mimura","doi":"10.1109/SISPAD.2014.6931613","DOIUrl":"https://doi.org/10.1109/SISPAD.2014.6931613","url":null,"abstract":"We carried out Monte Carlo (MC) simulation of In<sub>0.52</sub>Al<sub>0.48</sub>As/In<sub>0.53</sub>Ga<sub>0.47</sub>As high electron mobility transistors (HEMTs) with various shape of buried gate. Especially, we examined the HEMT with a “realistic” buried gate in which the tip of gate foot is “round.” We found that the “effective” gate length is determined by the length of gate foot tip from the electron velocity profiles and electric field in the channel layer. Furthermore, the “round” tip of gate electrode is convenient to prevent breakdown.","PeriodicalId":101858,"journal":{"name":"2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2014-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121857586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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