Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105923
L.C. Beavis, J. Panitz, D. J. Sharp
Styrene-acrylate copolymer coatings were deposited onto anodized aluminum substrates and the processing characteristics correlated with coating properties. The aluminum (5005-H34) alloy trough or housing module was anodized in a chilled (0-5 degrees C) 18% aqueous sulfuric acid bath. The entire housing was anodized to 50 V at a current density of 1.4 A/dm/sup 2/. A styrene-acrylate copolymer electrophoretic bath was prepared, and the bottom of the inside of the module was electrocoated at 0.5 mA/cm/sup 2/ for 120 s. Breakdown measurements were obtained by placing a probe on the coating composite and gradually increasing the voltage until a current in excess of 10 mA occurred. The results indicate that thin, relatively high thermal conductivity, high-voltage breakdown dielectrics can be formed using this economical process.<>
在阳极氧化铝基体上沉积了苯乙烯-丙烯酸酯共聚物涂层，其工艺特性与涂层性能有关。铝(5005-H34)合金槽或外壳模块在冷冻(0-5℃)18%硫酸水溶液浴中阳极氧化。整个外壳在1.4 a /dm/sup 2/的电流密度下阳极氧化至50 V。制备苯乙烯-丙烯酸酯共聚物电泳液，模块内部底部以0.5 mA/cm/sup 2/的速度电泳120 s。击穿测量是通过在涂层复合材料上放置探针并逐渐增加电压直到电流超过10ma来获得的。结果表明，使用这种经济的方法可以形成薄的、导热系数相对较高的高压击穿电介质。
{"title":"Thermally conductive alumina/organic composites for photovoltaic concentrator cell isolation","authors":"L.C. Beavis, J. Panitz, D. J. Sharp","doi":"10.1109/PVSC.1988.105923","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105923","url":null,"abstract":"Styrene-acrylate copolymer coatings were deposited onto anodized aluminum substrates and the processing characteristics correlated with coating properties. The aluminum (5005-H34) alloy trough or housing module was anodized in a chilled (0-5 degrees C) 18% aqueous sulfuric acid bath. The entire housing was anodized to 50 V at a current density of 1.4 A/dm/sup 2/. A styrene-acrylate copolymer electrophoretic bath was prepared, and the bottom of the inside of the module was electrocoated at 0.5 mA/cm/sup 2/ for 120 s. Breakdown measurements were obtained by placing a probe on the coating composite and gradually increasing the voltage until a current in excess of 10 mA occurred. The results indicate that thin, relatively high thermal conductivity, high-voltage breakdown dielectrics can be formed using this economical process.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"5 1","pages":"1338-1340 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75992719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105835
R. Burgess, W.S. Chen, W. Devaney, D. H. Doyle, N. Kim, B. Stanbery
The effects of proton and electron radiation on the performances of GaAs and CuInSe/sub 2//CdZnS (CIS) thin-film solar cells are evaluated. Bare cells (i.e. with no coverglass) were exposed to several energies of electron and proton radiation, and their performances were monitored by illuminated I-V curves, dark I-V curves, and spectral response measurements at different fluence levels. These experiments reconfirm that no measurable damage occurs to CIS solar cells when exposed to 1 and 2 MeV electrons to a total fluence of 5.0*10/sup 15/ cm/sup -2/. For proton irradiations, the results indicate that CIS cells are more radiation resistant than GaAs cells, by a factor of ten, when compared at the same energy levels. Comparison of the electron and proton irradiation results to those reported in the literature shows that the thin-film GaAs solar cells are as radiation resistant as other GaAs bulk cells at 1.0 MeV protons and are more radiation resistant at both the 1.0 MeV electron and 200 keV proton energies.<>
{"title":"Electron and proton radiation effects on GaAs and CuInSe/sub 2/ thin film solar cells","authors":"R. Burgess, W.S. Chen, W. Devaney, D. H. Doyle, N. Kim, B. Stanbery","doi":"10.1109/PVSC.1988.105835","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105835","url":null,"abstract":"The effects of proton and electron radiation on the performances of GaAs and CuInSe/sub 2//CdZnS (CIS) thin-film solar cells are evaluated. Bare cells (i.e. with no coverglass) were exposed to several energies of electron and proton radiation, and their performances were monitored by illuminated I-V curves, dark I-V curves, and spectral response measurements at different fluence levels. These experiments reconfirm that no measurable damage occurs to CIS solar cells when exposed to 1 and 2 MeV electrons to a total fluence of 5.0*10/sup 15/ cm/sup -2/. For proton irradiations, the results indicate that CIS cells are more radiation resistant than GaAs cells, by a factor of ten, when compared at the same energy levels. Comparison of the electron and proton irradiation results to those reported in the literature shows that the thin-film GaAs solar cells are as radiation resistant as other GaAs bulk cells at 1.0 MeV protons and are more radiation resistant at both the 1.0 MeV electron and 200 keV proton energies.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"6 1","pages":"909-912 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79900969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105889
H. Saha, R. Sathpathy, D. Mukherjee
A generalized design methodology based on a basic need criterion was developed for a hybrid PV power system. Application of this methodology to a nonelectrified Indian village in Orissa yielded acceptable values of the optimum mixing ratio of the PV and wind energies. It is shown how PV and wind complement each other to provide year-long dependable energy economically.<>
{"title":"Design of hybrid PV systems","authors":"H. Saha, R. Sathpathy, D. Mukherjee","doi":"10.1109/PVSC.1988.105889","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105889","url":null,"abstract":"A generalized design methodology based on a basic need criterion was developed for a hybrid PV power system. Application of this methodology to a nonelectrified Indian village in Orissa yielded acceptable values of the optimum mixing ratio of the PV and wind energies. It is shown how PV and wind complement each other to provide year-long dependable energy economically.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"129 1","pages":"1174-1178 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77486011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105690
D. Della Sala, C. Reita, G. Conte, F. Galluzzi, G. Grillo
The application of PDS (photothermal deflection spectroscopy) to the counting of defect states is complicated in a-Ge/sub x/Si/sub 1-x/ by the coexistence of two types of dangling bonds and their unknown energetic position in the forbidden energy gap. Using a model density of states, the authors conclude that it is intrinsically impossible to distinguish between Si and Ge dangling bonds. In addition, despite the fact that the density of bulk defects can be evaluated successfully, it is suggested that there is always a spurious absorption due to surface states. The measured density of dangling bonds keeps increasing from pure a-Si:H (N/sub d/ equivalent to 2*10/sup 16/ cm/sup -3/) to pure a-Ge:H (N/sub d/ equivalent to 5*10/sup 17/ cm/sup -3/), and this is shown to be a material property.<>
{"title":"A critical analysis of the determination of the density of defects in a-Si/sub 1-x/Ge/sub x/ alloys with the PDS technique","authors":"D. Della Sala, C. Reita, G. Conte, F. Galluzzi, G. Grillo","doi":"10.1109/PVSC.1988.105690","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105690","url":null,"abstract":"The application of PDS (photothermal deflection spectroscopy) to the counting of defect states is complicated in a-Ge/sub x/Si/sub 1-x/ by the coexistence of two types of dangling bonds and their unknown energetic position in the forbidden energy gap. Using a model density of states, the authors conclude that it is intrinsically impossible to distinguish between Si and Ge dangling bonds. In addition, despite the fact that the density of bulk defects can be evaluated successfully, it is suggested that there is always a spurious absorption due to surface states. The measured density of dangling bonds keeps increasing from pure a-Si:H (N/sub d/ equivalent to 2*10/sup 16/ cm/sup -3/) to pure a-Ge:H (N/sub d/ equivalent to 5*10/sup 17/ cm/sup -3/), and this is shown to be a material property.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"22 1","pages":"212-217 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87149859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105667
G. Mon, L. Wen, J. Meyer, R. Ross, A. Nelson
The electrochemical and galvanic corrosion properties of thin-film photovoltaic (TF-PV) modules (solar cells) and module subcomponents are determined and interpreted in the light of established corrosion science. Results of a detailed study of thin-film aluminum metallization corrosion are presented. Bar-graph corrosion, observed in fielded modules, has been induced experimentally and found to be electrochemical in nature. Corrosion rates and passivation techniques for TF-PV modules are discussed.<>
{"title":"Electrochemical and galvanic corrosion effects in thin-film photovoltaic modules","authors":"G. Mon, L. Wen, J. Meyer, R. Ross, A. Nelson","doi":"10.1109/PVSC.1988.105667","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105667","url":null,"abstract":"The electrochemical and galvanic corrosion properties of thin-film photovoltaic (TF-PV) modules (solar cells) and module subcomponents are determined and interpreted in the light of established corrosion science. Results of a detailed study of thin-film aluminum metallization corrosion are presented. Bar-graph corrosion, observed in fielded modules, has been induced experimentally and found to be electrochemical in nature. Corrosion rates and passivation techniques for TF-PV modules are discussed.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"9 1","pages":"108-113 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90921580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105868
Y. Takeda, K. Takigawa, H. Kobayashi, K. Nakahara, T. Morishita, A. Kitamura, A. Miyoshi, H. Matsuda, S. Komatsu
A 200 kW test facility comprising one hundred 2 kWp PV systems and a simulated utility grid was constructed to establish an adequate utility interface and control technology for small-scale dispersed PV systems. Experimental results are described. Demonstration experiments were performed, and the results show that the harmonic distortion in the distribution line was little influenced, and the problem of harmonics has been almost solved. It is confirmed that appropriate measures must be established for prevention of voltage variation in the low-voltage distribution line and for prevention of islanding during power outages. Solutions to these problems were also investigated using this facility.<>
{"title":"Test and study of utility interface and control problems for residential PV systems in Rokko Island 200 kW test facility","authors":"Y. Takeda, K. Takigawa, H. Kobayashi, K. Nakahara, T. Morishita, A. Kitamura, A. Miyoshi, H. Matsuda, S. Komatsu","doi":"10.1109/PVSC.1988.105868","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105868","url":null,"abstract":"A 200 kW test facility comprising one hundred 2 kWp PV systems and a simulated utility grid was constructed to establish an adequate utility interface and control technology for small-scale dispersed PV systems. Experimental results are described. Demonstration experiments were performed, and the results show that the harmonic distortion in the distribution line was little influenced, and the problem of harmonics has been almost solved. It is confirmed that appropriate measures must be established for prevention of voltage variation in the low-voltage distribution line and for prevention of islanding during power outages. Solutions to these problems were also investigated using this facility.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"43 1","pages":"1062-1067 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91225787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105934
L. Kazmerski
Techniques for chemical, compositional, and structural analysis of grain boundaries and other microfeatures in polycrystalline photovoltaic semiconductors are examined. These analyses cover the spatial resolution regime from several hundred microns to single atoms. Several conventional surface analysis methods used for chemical mapping are introduced for comparison of the limitations and interpretation of data, stressing the limits of spatial resolution. The emphasis is on techniques that provide structural, chemical, and bonding information on atomic dimensions. Specifically, spectroscopic scanning tunneling microscopy (STM) is discussed in terms of providing complementary diagnostic information. Comparative examples are given for the neutralization of shallow impurities at Si grain boundaries by hydrogen, and the incorporation of oxygen at surfaces and internal defects in CuInSe/sub 2/.<>
{"title":"Atomic imaging and microanalysis of photovoltaic semiconductor surfaces and interfaces","authors":"L. Kazmerski","doi":"10.1109/PVSC.1988.105934","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105934","url":null,"abstract":"Techniques for chemical, compositional, and structural analysis of grain boundaries and other microfeatures in polycrystalline photovoltaic semiconductors are examined. These analyses cover the spatial resolution regime from several hundred microns to single atoms. Several conventional surface analysis methods used for chemical mapping are introduced for comparison of the limitations and interpretation of data, stressing the limits of spatial resolution. The emphasis is on techniques that provide structural, chemical, and bonding information on atomic dimensions. Specifically, spectroscopic scanning tunneling microscopy (STM) is discussed in terms of providing complementary diagnostic information. Comparative examples are given for the neutralization of shallow impurities at Si grain boundaries by hydrogen, and the incorporation of oxygen at surfaces and internal defects in CuInSe/sub 2/.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"1375-1383 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90801591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105731
D. Arvizu
The author discusses recent progress in US crystalline silicon photovoltaic cell technology for both one-sun and concentrating applications. The progress in crystalline silicon technology has manifested itself in improved efficiency and in lower costs of processing and production. Experience over the past eight years with large systems representative of utility-scale applications has been good. It is suggested that there now appear to be several choices within the crystalline silicon technology path that have excellent potential to meet the necessary cost for entry into the utility market. The status of the current research efforts and the direction of the US Department of Energy sponsored crystalline silicon research program are discussed.<>
{"title":"Crystalline silicon photovoltaic cell technology: meeting the challenge for utility power","authors":"D. Arvizu","doi":"10.1109/PVSC.1988.105731","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105731","url":null,"abstract":"The author discusses recent progress in US crystalline silicon photovoltaic cell technology for both one-sun and concentrating applications. The progress in crystalline silicon technology has manifested itself in improved efficiency and in lower costs of processing and production. Experience over the past eight years with large systems representative of utility-scale applications has been good. It is suggested that there now appear to be several choices within the crystalline silicon technology path that have excellent potential to meet the necessary cost for entry into the utility market. The status of the current research efforts and the direction of the US Department of Energy sponsored crystalline silicon research program are discussed.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"7 1","pages":"397-404 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89208357","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105822
T. Stern
An analysis of four months of data from SLATS concentrator experiments on LIPS-III is presented. The array panel includes three mirrors, each focusing on two different linear solar cell strings. Small changes in current, voltage, and temperature have been observed in all six experiments. The use of unglassed solar cells on four of the six strings does not seem to affect these performance trends, confirming that the surrounding mirror and cell assembly components can be used as cell shielding. Analysis of current output during off-pointed periods allows a determination of concentrator pointing tolerances. Results show the ability of the design to withstand launch and deployment forces and maintain the accuracy needed for optical efficiency.<>
{"title":"Interim results of the SLATS concentrator experiment on LIPS-II (space vehicle power plants)","authors":"T. Stern","doi":"10.1109/PVSC.1988.105822","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105822","url":null,"abstract":"An analysis of four months of data from SLATS concentrator experiments on LIPS-III is presented. The array panel includes three mirrors, each focusing on two different linear solar cell strings. Small changes in current, voltage, and temperature have been observed in all six experiments. The use of unglassed solar cells on four of the six strings does not seem to affect these performance trends, confirming that the surrounding mirror and cell assembly components can be used as cell shielding. Analysis of current output during off-pointed periods allows a determination of concentrator pointing tolerances. Results show the ability of the design to withstand launch and deployment forces and maintain the accuracy needed for optical efficiency.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"35 1","pages":"837-840 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87798117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105713
G. Willeke, R. Martins
Diffraction and other structural measurements on n-type SiC thin films prepared in a TCDDC (two consecutive decomposition and deposition chamber) system indicate the presence of Si microcrystals (without evidence for SiC crystallites). Weakly absorbing, highly conductive layers ( sigma >or=10/sup -1/ ( Omega -cm)/sup -1/) contain up to 20 at.% C and 25 at.% O. The optoelectronic properties of these films can be explained in terms of a sufficient volume fraction (above the percolation threshold) of Si microcrystals surrounded by an a-Si:C,O,H matrix.<>
{"title":"Structural properties of weakly absorbing highly conductive SiC thin films prepared in a TCDDC system","authors":"G. Willeke, R. Martins","doi":"10.1109/PVSC.1988.105713","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105713","url":null,"abstract":"Diffraction and other structural measurements on n-type SiC thin films prepared in a TCDDC (two consecutive decomposition and deposition chamber) system indicate the presence of Si microcrystals (without evidence for SiC crystallites). Weakly absorbing, highly conductive layers ( sigma >or=10/sup -1/ ( Omega -cm)/sup -1/) contain up to 20 at.% C and 25 at.% O. The optoelectronic properties of these films can be explained in terms of a sufficient volume fraction (above the percolation threshold) of Si microcrystals surrounded by an a-Si:C,O,H matrix.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"27 1","pages":"320-323 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84056478","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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