Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105923
L.C. Beavis, J. Panitz, D. J. Sharp
Styrene-acrylate copolymer coatings were deposited onto anodized aluminum substrates and the processing characteristics correlated with coating properties. The aluminum (5005-H34) alloy trough or housing module was anodized in a chilled (0-5 degrees C) 18% aqueous sulfuric acid bath. The entire housing was anodized to 50 V at a current density of 1.4 A/dm/sup 2/. A styrene-acrylate copolymer electrophoretic bath was prepared, and the bottom of the inside of the module was electrocoated at 0.5 mA/cm/sup 2/ for 120 s. Breakdown measurements were obtained by placing a probe on the coating composite and gradually increasing the voltage until a current in excess of 10 mA occurred. The results indicate that thin, relatively high thermal conductivity, high-voltage breakdown dielectrics can be formed using this economical process.<>
在阳极氧化铝基体上沉积了苯乙烯-丙烯酸酯共聚物涂层，其工艺特性与涂层性能有关。铝(5005-H34)合金槽或外壳模块在冷冻(0-5℃)18%硫酸水溶液浴中阳极氧化。整个外壳在1.4 a /dm/sup 2/的电流密度下阳极氧化至50 V。制备苯乙烯-丙烯酸酯共聚物电泳液，模块内部底部以0.5 mA/cm/sup 2/的速度电泳120 s。击穿测量是通过在涂层复合材料上放置探针并逐渐增加电压直到电流超过10ma来获得的。结果表明，使用这种经济的方法可以形成薄的、导热系数相对较高的高压击穿电介质。
{"title":"Thermally conductive alumina/organic composites for photovoltaic concentrator cell isolation","authors":"L.C. Beavis, J. Panitz, D. J. Sharp","doi":"10.1109/PVSC.1988.105923","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105923","url":null,"abstract":"Styrene-acrylate copolymer coatings were deposited onto anodized aluminum substrates and the processing characteristics correlated with coating properties. The aluminum (5005-H34) alloy trough or housing module was anodized in a chilled (0-5 degrees C) 18% aqueous sulfuric acid bath. The entire housing was anodized to 50 V at a current density of 1.4 A/dm/sup 2/. A styrene-acrylate copolymer electrophoretic bath was prepared, and the bottom of the inside of the module was electrocoated at 0.5 mA/cm/sup 2/ for 120 s. Breakdown measurements were obtained by placing a probe on the coating composite and gradually increasing the voltage until a current in excess of 10 mA occurred. The results indicate that thin, relatively high thermal conductivity, high-voltage breakdown dielectrics can be formed using this economical process.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"5 1","pages":"1338-1340 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"75992719","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105835
R. Burgess, W.S. Chen, W. Devaney, D. H. Doyle, N. Kim, B. Stanbery
The effects of proton and electron radiation on the performances of GaAs and CuInSe/sub 2//CdZnS (CIS) thin-film solar cells are evaluated. Bare cells (i.e. with no coverglass) were exposed to several energies of electron and proton radiation, and their performances were monitored by illuminated I-V curves, dark I-V curves, and spectral response measurements at different fluence levels. These experiments reconfirm that no measurable damage occurs to CIS solar cells when exposed to 1 and 2 MeV electrons to a total fluence of 5.0*10/sup 15/ cm/sup -2/. For proton irradiations, the results indicate that CIS cells are more radiation resistant than GaAs cells, by a factor of ten, when compared at the same energy levels. Comparison of the electron and proton irradiation results to those reported in the literature shows that the thin-film GaAs solar cells are as radiation resistant as other GaAs bulk cells at 1.0 MeV protons and are more radiation resistant at both the 1.0 MeV electron and 200 keV proton energies.<>
{"title":"Electron and proton radiation effects on GaAs and CuInSe/sub 2/ thin film solar cells","authors":"R. Burgess, W.S. Chen, W. Devaney, D. H. Doyle, N. Kim, B. Stanbery","doi":"10.1109/PVSC.1988.105835","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105835","url":null,"abstract":"The effects of proton and electron radiation on the performances of GaAs and CuInSe/sub 2//CdZnS (CIS) thin-film solar cells are evaluated. Bare cells (i.e. with no coverglass) were exposed to several energies of electron and proton radiation, and their performances were monitored by illuminated I-V curves, dark I-V curves, and spectral response measurements at different fluence levels. These experiments reconfirm that no measurable damage occurs to CIS solar cells when exposed to 1 and 2 MeV electrons to a total fluence of 5.0*10/sup 15/ cm/sup -2/. For proton irradiations, the results indicate that CIS cells are more radiation resistant than GaAs cells, by a factor of ten, when compared at the same energy levels. Comparison of the electron and proton irradiation results to those reported in the literature shows that the thin-film GaAs solar cells are as radiation resistant as other GaAs bulk cells at 1.0 MeV protons and are more radiation resistant at both the 1.0 MeV electron and 200 keV proton energies.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"6 1","pages":"909-912 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79900969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105889
H. Saha, R. Sathpathy, D. Mukherjee
A generalized design methodology based on a basic need criterion was developed for a hybrid PV power system. Application of this methodology to a nonelectrified Indian village in Orissa yielded acceptable values of the optimum mixing ratio of the PV and wind energies. It is shown how PV and wind complement each other to provide year-long dependable energy economically.<>
{"title":"Design of hybrid PV systems","authors":"H. Saha, R. Sathpathy, D. Mukherjee","doi":"10.1109/PVSC.1988.105889","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105889","url":null,"abstract":"A generalized design methodology based on a basic need criterion was developed for a hybrid PV power system. Application of this methodology to a nonelectrified Indian village in Orissa yielded acceptable values of the optimum mixing ratio of the PV and wind energies. It is shown how PV and wind complement each other to provide year-long dependable energy economically.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"129 1","pages":"1174-1178 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77486011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105690
D. Della Sala, C. Reita, G. Conte, F. Galluzzi, G. Grillo
The application of PDS (photothermal deflection spectroscopy) to the counting of defect states is complicated in a-Ge/sub x/Si/sub 1-x/ by the coexistence of two types of dangling bonds and their unknown energetic position in the forbidden energy gap. Using a model density of states, the authors conclude that it is intrinsically impossible to distinguish between Si and Ge dangling bonds. In addition, despite the fact that the density of bulk defects can be evaluated successfully, it is suggested that there is always a spurious absorption due to surface states. The measured density of dangling bonds keeps increasing from pure a-Si:H (N/sub d/ equivalent to 2*10/sup 16/ cm/sup -3/) to pure a-Ge:H (N/sub d/ equivalent to 5*10/sup 17/ cm/sup -3/), and this is shown to be a material property.<>
{"title":"A critical analysis of the determination of the density of defects in a-Si/sub 1-x/Ge/sub x/ alloys with the PDS technique","authors":"D. Della Sala, C. Reita, G. Conte, F. Galluzzi, G. Grillo","doi":"10.1109/PVSC.1988.105690","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105690","url":null,"abstract":"The application of PDS (photothermal deflection spectroscopy) to the counting of defect states is complicated in a-Ge/sub x/Si/sub 1-x/ by the coexistence of two types of dangling bonds and their unknown energetic position in the forbidden energy gap. Using a model density of states, the authors conclude that it is intrinsically impossible to distinguish between Si and Ge dangling bonds. In addition, despite the fact that the density of bulk defects can be evaluated successfully, it is suggested that there is always a spurious absorption due to surface states. The measured density of dangling bonds keeps increasing from pure a-Si:H (N/sub d/ equivalent to 2*10/sup 16/ cm/sup -3/) to pure a-Ge:H (N/sub d/ equivalent to 5*10/sup 17/ cm/sup -3/), and this is shown to be a material property.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"22 1","pages":"212-217 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87149859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105667
G. Mon, L. Wen, J. Meyer, R. Ross, A. Nelson
The electrochemical and galvanic corrosion properties of thin-film photovoltaic (TF-PV) modules (solar cells) and module subcomponents are determined and interpreted in the light of established corrosion science. Results of a detailed study of thin-film aluminum metallization corrosion are presented. Bar-graph corrosion, observed in fielded modules, has been induced experimentally and found to be electrochemical in nature. Corrosion rates and passivation techniques for TF-PV modules are discussed.<>
{"title":"Electrochemical and galvanic corrosion effects in thin-film photovoltaic modules","authors":"G. Mon, L. Wen, J. Meyer, R. Ross, A. Nelson","doi":"10.1109/PVSC.1988.105667","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105667","url":null,"abstract":"The electrochemical and galvanic corrosion properties of thin-film photovoltaic (TF-PV) modules (solar cells) and module subcomponents are determined and interpreted in the light of established corrosion science. Results of a detailed study of thin-film aluminum metallization corrosion are presented. Bar-graph corrosion, observed in fielded modules, has been induced experimentally and found to be electrochemical in nature. Corrosion rates and passivation techniques for TF-PV modules are discussed.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"9 1","pages":"108-113 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90921580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105868
Y. Takeda, K. Takigawa, H. Kobayashi, K. Nakahara, T. Morishita, A. Kitamura, A. Miyoshi, H. Matsuda, S. Komatsu
A 200 kW test facility comprising one hundred 2 kWp PV systems and a simulated utility grid was constructed to establish an adequate utility interface and control technology for small-scale dispersed PV systems. Experimental results are described. Demonstration experiments were performed, and the results show that the harmonic distortion in the distribution line was little influenced, and the problem of harmonics has been almost solved. It is confirmed that appropriate measures must be established for prevention of voltage variation in the low-voltage distribution line and for prevention of islanding during power outages. Solutions to these problems were also investigated using this facility.<>
{"title":"Test and study of utility interface and control problems for residential PV systems in Rokko Island 200 kW test facility","authors":"Y. Takeda, K. Takigawa, H. Kobayashi, K. Nakahara, T. Morishita, A. Kitamura, A. Miyoshi, H. Matsuda, S. Komatsu","doi":"10.1109/PVSC.1988.105868","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105868","url":null,"abstract":"A 200 kW test facility comprising one hundred 2 kWp PV systems and a simulated utility grid was constructed to establish an adequate utility interface and control technology for small-scale dispersed PV systems. Experimental results are described. Demonstration experiments were performed, and the results show that the harmonic distortion in the distribution line was little influenced, and the problem of harmonics has been almost solved. It is confirmed that appropriate measures must be established for prevention of voltage variation in the low-voltage distribution line and for prevention of islanding during power outages. Solutions to these problems were also investigated using this facility.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"43 1","pages":"1062-1067 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91225787","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105961
A. Rockett, T. Lommasson, L. Yang, H. Talieh, P. Campos, J. Thornton
The initial results of experiments characterizing CuInSe/sub 2/ deposition by a hybrid sputtering-and-evaporation technique are presented. The method yields films with compositions and structural properties comparable with those commonly accepted for polycrystalline CuInSe/sub 2/ over a large composition range at growth temperatures up to 450 degrees C. Film compositions are uniform to within +or-1 atomic percent, and nonuniformities can be directly related to the deposition geometry. The Se flux is shown to play a major role in determining both the Se and the In contents of the films at elevated temperatures. The substrate properties strongly affect the film composition. Layers deposited on sputtered Mo surfaces exhibit a lower In content than films on glass at all temperatures examined. Cu, In, and Se diffusion into the column boundaries of the Mo substrates is observed at all growth temperatures.<>
{"title":"Deposition of CuInSe/sub 2/ by the hybrid sputtering-and-evaporation method","authors":"A. Rockett, T. Lommasson, L. Yang, H. Talieh, P. Campos, J. Thornton","doi":"10.1109/PVSC.1988.105961","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105961","url":null,"abstract":"The initial results of experiments characterizing CuInSe/sub 2/ deposition by a hybrid sputtering-and-evaporation technique are presented. The method yields films with compositions and structural properties comparable with those commonly accepted for polycrystalline CuInSe/sub 2/ over a large composition range at growth temperatures up to 450 degrees C. Film compositions are uniform to within +or-1 atomic percent, and nonuniformities can be directly related to the deposition geometry. The Se flux is shown to play a major role in determining both the Se and the In contents of the films at elevated temperatures. The substrate properties strongly affect the film composition. Layers deposited on sputtered Mo surfaces exhibit a lower In content than films on glass at all temperatures examined. Cu, In, and Se diffusion into the column boundaries of the Mo substrates is observed at all growth temperatures.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"17 1","pages":"1505-1509 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73777240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105987
H. El Ghitani, S. Martinuzzi
Green's function is used to establish a three-dimensional model to obtain a detailed rigorous analytical expression of the effect of dislocations. The predictions of the model were verified by measuring the photocurrent, the spectral response, and the effective diffusion lengths of minority carriers (L/sub eff/) and by evaluating the dislocation etch pit density. Three materials are considered, POLYX, SILSO, and SEMIX, which differ by the value of the diffusion length (L/sub n/) in the homogeneous regions of the bulk. It is found that the values of J/sub sc/ and L/sub eff/ are dependent on N/sub dis/ and S/sub d/ provided they are greater than 10/sup 4/ cm/sup -2/ and 10/sup 4/ cm-s/sup -1/, respectively. The computed variations also depend on the value of the diffusion length in the homogeneous region of the bulk material. A reasonable agreement is found with experimental results obtained with large-grained polycrystalline materials such as SILSO and POLYX.<>
{"title":"Modelling of the influence of dislocations on effective diffusion length and photocurrent of polycrystalline silicon cells","authors":"H. El Ghitani, S. Martinuzzi","doi":"10.1109/PVSC.1988.105987","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105987","url":null,"abstract":"Green's function is used to establish a three-dimensional model to obtain a detailed rigorous analytical expression of the effect of dislocations. The predictions of the model were verified by measuring the photocurrent, the spectral response, and the effective diffusion lengths of minority carriers (L/sub eff/) and by evaluating the dislocation etch pit density. Three materials are considered, POLYX, SILSO, and SEMIX, which differ by the value of the diffusion length (L/sub n/) in the homogeneous regions of the bulk. It is found that the values of J/sub sc/ and L/sub eff/ are dependent on N/sub dis/ and S/sub d/ provided they are greater than 10/sup 4/ cm/sup -2/ and 10/sup 4/ cm-s/sup -1/, respectively. The computed variations also depend on the value of the diffusion length in the homogeneous region of the bulk material. A reasonable agreement is found with experimental results obtained with large-grained polycrystalline materials such as SILSO and POLYX.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"10 1","pages":"1624-1628 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72967522","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105852
B. Anspaugh, R. Kachare, P. Iles
The behavior of GaAs solar cells after photon illumination for a prolonged exposure time is presented. More than 55 OMCVD AlGaAs/GaAs solar cells were exposed for over 400 h to AM0 photons at 29 degrees C in three separate, well-controlled runs. Significant degradation of solar cell efficiency was observed in two out of three runs. Although noticeable losses in the open-circuit voltage, fill factor, and maximum power were observed, no change in the short-circuit current was found. In one of the runs, no change was seen in either the test cells or the control cells. Each cell in this run was protected with a coverglass. The cells in this run had thicker buffer layers and thinner window layers than the cells in the other two runs.<>
{"title":"Photon degradation of AlGaAs/GaAs solar cells","authors":"B. Anspaugh, R. Kachare, P. Iles","doi":"10.1109/PVSC.1988.105852","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105852","url":null,"abstract":"The behavior of GaAs solar cells after photon illumination for a prolonged exposure time is presented. More than 55 OMCVD AlGaAs/GaAs solar cells were exposed for over 400 h to AM0 photons at 29 degrees C in three separate, well-controlled runs. Significant degradation of solar cell efficiency was observed in two out of three runs. Although noticeable losses in the open-circuit voltage, fill factor, and maximum power were observed, no change in the short-circuit current was found. In one of the runs, no change was seen in either the test cells or the control cells. Each cell in this run was protected with a coverglass. The cells in this run had thicker buffer layers and thinner window layers than the cells in the other two runs.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"102 1","pages":"985-989 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74260163","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105686
T. Muschik, R. Schwarz, H. Curtins, M. Favre
The decrease of photoluminescence (PL) intensity at low temperature was measured as a function of external fields (up to 3*10/sup 5/ V/cm) in hydrogenated amorphous silicon (a-Si:H). The results are discussed within the framework of the recombination of geminate pairs together with basic physical phenomena such as carrier separation during thermalization trapping of photoexcited carriers in band tails, and possible subsequent reemission or tunneling out of traps. It is concluded that separation of carriers during relaxation in extended and flat tail states is the dominant process for the field quenching of PL intensity. But other processes such as Poole-Frenkel emission and tunneling out of traps cannot be ruled out totally. The basic idea of carrier separation is supported by consistent values for the average mobility from both the quenching of PL intensity with electric fields and the concomitant energy shift of the maximum in the PL spectra.<>
{"title":"Photoluminescence quenching by electric fields in hydrogenated amorphous silicon","authors":"T. Muschik, R. Schwarz, H. Curtins, M. Favre","doi":"10.1109/PVSC.1988.105686","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105686","url":null,"abstract":"The decrease of photoluminescence (PL) intensity at low temperature was measured as a function of external fields (up to 3*10/sup 5/ V/cm) in hydrogenated amorphous silicon (a-Si:H). The results are discussed within the framework of the recombination of geminate pairs together with basic physical phenomena such as carrier separation during thermalization trapping of photoexcited carriers in band tails, and possible subsequent reemission or tunneling out of traps. It is concluded that separation of carriers during relaxation in extended and flat tail states is the dominant process for the field quenching of PL intensity. But other processes such as Poole-Frenkel emission and tunneling out of traps cannot be ruled out totally. The basic idea of carrier separation is supported by consistent values for the average mobility from both the quenching of PL intensity with electric fields and the concomitant energy shift of the maximum in the PL spectra.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"118 1","pages":"191-195 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77397337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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