Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105816
R.L. Statler, D. Walker
The preliminary analysis and results are presented of a space experiment to evaluate the performance of a new generation of silicon vertical junction solar cells and three adhesives for attaching coverglass to the solar cells. Two of the adhesives are used for the first time in coverglass applications in the space environment. The Solarex vertical junction solar cells, which are of 10 Omega cm silicon with back surface fields and back surface reflectors, are compared to Solarex planar junction cells of the same silicon. The results for up to 386 days in space indicate that the two types of solar cell show about the same degradation rate in power output. There are no significant differences in the performance of the three adhesives.<>
{"title":"The space performance of silicon vertical junction solar cells on the LIPS III satellite","authors":"R.L. Statler, D. Walker","doi":"10.1109/PVSC.1988.105816","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105816","url":null,"abstract":"The preliminary analysis and results are presented of a space experiment to evaluate the performance of a new generation of silicon vertical junction solar cells and three adhesives for attaching coverglass to the solar cells. Two of the adhesives are used for the first time in coverglass applications in the space environment. The Solarex vertical junction solar cells, which are of 10 Omega cm silicon with back surface fields and back surface reflectors, are compared to Solarex planar junction cells of the same silicon. The results for up to 386 days in space indicate that the two types of solar cell show about the same degradation rate in power output. There are no significant differences in the performance of the three adhesives.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"342 1","pages":"808-812 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79745223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105960
B. Basol, V. Kapur, R. Kullberg, R. Mitchell
A two state process for preparing ZnTe and CdTe layers and Cd/sub 1-x/Zn/sub x/Te (0>
制备ZnTe和CdTe层及Cd/sub 1-x/Zn/sub x/Te (0>
{"title":"Cd/sub 1-x/Zn/sub x/Te thin films prepared by a two-stage process utilizing electrodeposition","authors":"B. Basol, V. Kapur, R. Kullberg, R. Mitchell","doi":"10.1109/PVSC.1988.105960","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105960","url":null,"abstract":"A two state process for preparing ZnTe and CdTe layers and Cd/sub 1-x/Zn/sub x/Te (0<x<1) thin films of various compositions is presented. Extrinsic doping of these films is demonstrated. The two-stage technique involves depositing thin films of the elemental components of the compound (Cd, Zn, and Te) in the form of stacked layers and reaction of these layers in an inert atmosphere. The structural, optical, and electrical characteristics of the films obtained by this technique are presented. Solar cells using these films are demonstrated.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"4 1","pages":"1500-1504 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85371887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Defects in amorphous silicon germanium alloys","authors":"C. Fortmann, J. Tu","doi":"10.1109/PVSC.1988.105675","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105675","url":null,"abstract":"The electrical, optical, and stability properties of the materials in the Si/sub 1-y-x/Ge/sub x/H/sub y/ (0<x<1, 0.05<y<0.13) ternary system were investigated. It is found that the electron mobility lifetime product decreases with increasing x (Ge content) and y (H content). The optical bandgap and the electronic transport properties are found to be a function of both y and x. The stability of the alloys was examined by the characterization of light-induced effects in solar cells. The stability of solar cells appears to be only a function of the hydrogen content. These studies suggest that defects related to both x and y control the electronic transport of annealed materials, while only defects related to y result in light-induced changes. The alloy with the greatest promise for improves solar cell performance and stability is a-Si/sub 0.43/Ge/sub 0.52/H/sub 0.05/ with E/sub g/=1.3 eV.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"27 1","pages":"139-142 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81784980","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105820
P. Iles, K. I. Chang, K. S. Ling, C. Chu, J. Wise, R. Morris
Preorbit and in-orbit test panel results are presented. The test panel contained three types of solar cell: GaAs/Ge, GaAs, and silicon. The test results showed anomalies in tracking the cell performance in ground tests and into orbit. There was also in-orbit degradation greater than that expected from the radiation models used for the LIPS-3 orbit. With these reservations, the GaAs/Ge cell performance confirmed recent advances in explaining the electrical performance of these cells. Both the GaAs/Ge and GaAs cells have deeper p-n junction depths than current cells, and this probably caused some of the in-orbit degradation. For the silicon cells, the in-orbit degradation was greater than expected for their design and may have been affected by mechanical factors in panel assembly or mounting on the satellite.<>
{"title":"ASEC/Air Force LIPS-3 test panel results","authors":"P. Iles, K. I. Chang, K. S. Ling, C. Chu, J. Wise, R. Morris","doi":"10.1109/PVSC.1988.105820","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105820","url":null,"abstract":"Preorbit and in-orbit test panel results are presented. The test panel contained three types of solar cell: GaAs/Ge, GaAs, and silicon. The test results showed anomalies in tracking the cell performance in ground tests and into orbit. There was also in-orbit degradation greater than that expected from the radiation models used for the LIPS-3 orbit. With these reservations, the GaAs/Ge cell performance confirmed recent advances in explaining the electrical performance of these cells. Both the GaAs/Ge and GaAs cells have deeper p-n junction depths than current cells, and this probably caused some of the in-orbit degradation. For the silicon cells, the in-orbit degradation was greater than expected for their design and may have been affected by mechanical factors in panel assembly or mounting on the satellite.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"64 1","pages":"826-830 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80195426","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105682
K. Misiakos, F.A. Lindholm
Computer simulation of a time-of-flight experiment is used to predict and interpret the terminal response following pulsed excitation in amorphous silicon solar cells. The device under consideration is a 0.62 mu m thick a-Si:H cell under short-circuit conditions. A 6 ps pulse of blue light having an absorption coefficient alpha =10/sup 6/ cm/sup -1/ and a flux density A=5*10/sup 18/ cm/sup -2/ s/sup -1/ shines through the P/sup +/ layer. Numerical solutions and the associated physical interpretation illuminate the transport physics and make it possible to assess the accuracy of the method. The interaction between free carriers and gap states is discussed on the basis of numerical results on the internal variable profiles. The influence on the transient photocurrent of band mobilities, electric field, transient trapping, and transient emission is investigated. Certain analytical approximations are derived based on an interpretation of the computer solutions. It is shown that increasing the fail state density from 10/sup 20/ to 10/sup 21/ cm/sup -3/ eV/sup -1/ changes the transport from nondispersive to dispersive and reduces the drift mobility by a factor of five.<>
{"title":"Computer simulation of transient experiments for determining the transport parameters in amorphous silicon solar cells","authors":"K. Misiakos, F.A. Lindholm","doi":"10.1109/PVSC.1988.105682","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105682","url":null,"abstract":"Computer simulation of a time-of-flight experiment is used to predict and interpret the terminal response following pulsed excitation in amorphous silicon solar cells. The device under consideration is a 0.62 mu m thick a-Si:H cell under short-circuit conditions. A 6 ps pulse of blue light having an absorption coefficient alpha =10/sup 6/ cm/sup -1/ and a flux density A=5*10/sup 18/ cm/sup -2/ s/sup -1/ shines through the P/sup +/ layer. Numerical solutions and the associated physical interpretation illuminate the transport physics and make it possible to assess the accuracy of the method. The interaction between free carriers and gap states is discussed on the basis of numerical results on the internal variable profiles. The influence on the transient photocurrent of band mobilities, electric field, transient trapping, and transient emission is investigated. Certain analytical approximations are derived based on an interpretation of the computer solutions. It is shown that increasing the fail state density from 10/sup 20/ to 10/sup 21/ cm/sup -3/ eV/sup -1/ changes the transport from nondispersive to dispersive and reduces the drift mobility by a factor of five.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"190 1","pages":"171-175 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77722773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105951
G. Turner, R. J. Schwartz, J. Gray
A numerical model which shows the effects of conduction band discontinuity, Delta /sub cb/, in CdS/CuInSe/sub 2/ solar cells is presented. Two scenarios for the dominant mechanism controlling open-circuit voltage, V/sub oc/, are considered: CuInSe/sub 2/ bulk recombination and CdS/CuInSe/sub 2/ interface recombination. The computation shows that the short-circuit current is independent of Delta /sub cb/ for either scenario, while V/sub oc/ is strongly affected only for the interface-dominated case and only for the CuInSe/sub 2/ conduction band positive with respect to the CdS conduction band. The experimental evidence implies that interface domination is not always the case in real devices, if it occurs at all.<>
{"title":"Band discontinuity and bulk vs. interface recombination in CdS/CuInSe/sub 2/ solar cells","authors":"G. Turner, R. J. Schwartz, J. Gray","doi":"10.1109/PVSC.1988.105951","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105951","url":null,"abstract":"A numerical model which shows the effects of conduction band discontinuity, Delta /sub cb/, in CdS/CuInSe/sub 2/ solar cells is presented. Two scenarios for the dominant mechanism controlling open-circuit voltage, V/sub oc/, are considered: CuInSe/sub 2/ bulk recombination and CdS/CuInSe/sub 2/ interface recombination. The computation shows that the short-circuit current is independent of Delta /sub cb/ for either scenario, while V/sub oc/ is strongly affected only for the interface-dominated case and only for the CuInSe/sub 2/ conduction band positive with respect to the CdS conduction band. The experimental evidence implies that interface domination is not always the case in real devices, if it occurs at all.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"7 1","pages":"1457-1460 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81310367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105973
A. Eyer, A. Rauber, N. Schillinger, J. Grabmaier
The design of a machine for semicontinuous production of 100-mm wide silicon ribbons is presented. As the grain selection takes place at the beginning of zone melting, continuous processing instead of single-sheet processing is reasonable and leads to fairly wide grains (on the order of 10-20 mm) extending over the whole length of the ribbon. Grain structure and defects are revealed by etching techniques. Due to the high intragrain defect density there is a significant effect of hydrogen passivation which is demonstrated by EBIC and LBIC measurements. The best solar cells made from silicon sheets from powder (SSP) material showed efficiencies above 13%.<>
{"title":"Silicon ribbons for solar cells grown from powder by the SSP method","authors":"A. Eyer, A. Rauber, N. Schillinger, J. Grabmaier","doi":"10.1109/PVSC.1988.105973","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105973","url":null,"abstract":"The design of a machine for semicontinuous production of 100-mm wide silicon ribbons is presented. As the grain selection takes place at the beginning of zone melting, continuous processing instead of single-sheet processing is reasonable and leads to fairly wide grains (on the order of 10-20 mm) extending over the whole length of the ribbon. Grain structure and defects are revealed by etching techniques. Due to the high intragrain defect density there is a significant effect of hydrogen passivation which is demonstrated by EBIC and LBIC measurements. The best solar cells made from silicon sheets from powder (SSP) material showed efficiencies above 13%.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"125 1","pages":"1565-1568 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90491345","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105887
P. Groumpos, K.Y. Khouzam, L. Khouzam
A new mathematical approach to proper load management techniques is presented. Loads are classified into four categories: convenient, essential, critical, and emergency. Priorities are assigned to the loads of each category. The energy requirement and duty cycle for each load are assumed to be known. The problem is to determine, in an optimal way, the actual energy supplied to these loads during a certain period of time. The solution to this problem is based on the maximization of a weighted objective function which depends on the load priorities and is subject to the total available energy. The mathematical problem is formulated as a resource allocation problem and is solved using dynamic programming techniques. Simulation studies illustrating the applicability of the new approach are presented.<>
{"title":"A dynamic programming approach to the energy management problem of photovoltaic power systems","authors":"P. Groumpos, K.Y. Khouzam, L. Khouzam","doi":"10.1109/PVSC.1988.105887","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105887","url":null,"abstract":"A new mathematical approach to proper load management techniques is presented. Loads are classified into four categories: convenient, essential, critical, and emergency. Priorities are assigned to the loads of each category. The energy requirement and duty cycle for each load are assumed to be known. The problem is to determine, in an optimal way, the actual energy supplied to these loads during a certain period of time. The solution to this problem is based on the maximization of a weighted objective function which depends on the load priorities and is subject to the total available energy. The mathematical problem is formulated as a resource allocation problem and is solved using dynamic programming techniques. Simulation studies illustrating the applicability of the new approach are presented.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"1164-1167 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89697686","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105855
L. Bertotti, C. Flores, J. Garner, F. Paletta, J. Wharf
The authors describe the problems faced in designing, manufacturing, and testing flight hardware and, in particular, in fabricating and testing concentrator and 100 mu m thick GaAs solar cells. The Advanced Solar GaAs Array (ASGA) experiment is designed to evaluate gallium arsenide solar cells and concentrator optics in space. It will be flown on the EUropean REtrievable CArrier (EURECA) for six months. The experiment configuration is defined on the basis of the EURECA mission analysis (orbit condition, natural environment) and includes solar cells of different types, with different junction depths and different thicknesses. The experiment also includes a concentrator solar array which is designed to be representative of a section of a full-size spacecraft array.<>
{"title":"The ASGA experiment on EURECA platform: testing of advanced GaAs solar cells in LEO","authors":"L. Bertotti, C. Flores, J. Garner, F. Paletta, J. Wharf","doi":"10.1109/PVSC.1988.105855","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105855","url":null,"abstract":"The authors describe the problems faced in designing, manufacturing, and testing flight hardware and, in particular, in fabricating and testing concentrator and 100 mu m thick GaAs solar cells. The Advanced Solar GaAs Array (ASGA) experiment is designed to evaluate gallium arsenide solar cells and concentrator optics in space. It will be flown on the EUropean REtrievable CArrier (EURECA) for six months. The experiment configuration is defined on the basis of the EURECA mission analysis (orbit condition, natural environment) and includes solar cells of different types, with different junction depths and different thicknesses. The experiment also includes a concentrator solar array which is designed to be representative of a section of a full-size spacecraft array.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"23 1","pages":"1002-1006 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88157237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105989
F.F. Wang, A. Fahrenbruch, R. Bube
The fabrication and characterization of metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) junctions on p- and n-type CdTe single crystals using thermal oxide CdTeO/sub 3/ is presented. It is found that for n-type CdTe, the oxide increases the open-circuit voltage over that of the Schottky barrier, whereas for p-type CdTe the oxide decreases the open-circuit voltage. These and several other junction properties can be understood in terms of proposed energy band diagrams for Cr/CdTeO/sub 3//p-CdTe and Au/CdTeO/sub 3//n-CdTe structures.<>
{"title":"Properties of metal-semiconductor and metal-insulator-semiconductor junctions on CdTe single crystals","authors":"F.F. Wang, A. Fahrenbruch, R. Bube","doi":"10.1109/PVSC.1988.105989","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105989","url":null,"abstract":"The fabrication and characterization of metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) junctions on p- and n-type CdTe single crystals using thermal oxide CdTeO/sub 3/ is presented. It is found that for n-type CdTe, the oxide increases the open-circuit voltage over that of the Schottky barrier, whereas for p-type CdTe the oxide decreases the open-circuit voltage. These and several other junction properties can be understood in terms of proposed energy band diagrams for Cr/CdTeO/sub 3//p-CdTe and Au/CdTeO/sub 3//n-CdTe structures.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"14 1","pages":"1635-1640 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86677286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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