Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105799
R. Mertens, M. Mauk, S. Jain, G. Borghs, R. van Overstraeten
Bandgap narrowing limits the open-circuit voltage of p-n junction solar cells both at low and high-level injection. The authors develop a method to estimate bandgap narrowing (and the accompanying reduction in built-in potential) using capacitance-voltage measurements. They then apply the method to hyperabrupt heavily doped GaAs diodes grown by molecular-beam epitaxy. The measured results clearly indicate substantial bandgap narrowing in heavily doped GaAs.<>
{"title":"Saturated photovoltage, built-in potential and bandgap-narrowing in homojunction solar cells","authors":"R. Mertens, M. Mauk, S. Jain, G. Borghs, R. van Overstraeten","doi":"10.1109/PVSC.1988.105799","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105799","url":null,"abstract":"Bandgap narrowing limits the open-circuit voltage of p-n junction solar cells both at low and high-level injection. The authors develop a method to estimate bandgap narrowing (and the accompanying reduction in built-in potential) using capacitance-voltage measurements. They then apply the method to hyperabrupt heavily doped GaAs diodes grown by molecular-beam epitaxy. The measured results clearly indicate substantial bandgap narrowing in heavily doped GaAs.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"80 1","pages":"735-737 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84180743","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105867
T. Hoff, J. Iannucci
The author addresses profit from the angle of increasing the value of PV in a utility market. The analysis is applied to Pacific Gas and Electric Company's system. Two basic questions are addressed. First, Which is of greatest value to PG&E: a large PV plant or several small plants distributed throughout the system? Second, Where should the plant or plants be sited? The value calculations use simulated performance data based on data from PG&E's solar insolation monitoring project (SIMP). Fourteen representative sites throughout PG&E's service territory are evaluated in order to select the site or configuration of sites with the highest value. The results lead to the conclusion that, all else being equal, the highest value is provided by one large PV plant rather than a combination of several smaller plants distributed throughout the service territory.<>
{"title":"Siting PV plants: a value based approach","authors":"T. Hoff, J. Iannucci","doi":"10.1109/PVSC.1988.105867","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105867","url":null,"abstract":"The author addresses profit from the angle of increasing the value of PV in a utility market. The analysis is applied to Pacific Gas and Electric Company's system. Two basic questions are addressed. First, Which is of greatest value to PG&E: a large PV plant or several small plants distributed throughout the system? Second, Where should the plant or plants be sited? The value calculations use simulated performance data based on data from PG&E's solar insolation monitoring project (SIMP). Fourteen representative sites throughout PG&E's service territory are evaluated in order to select the site or configuration of sites with the highest value. The results lead to the conclusion that, all else being equal, the highest value is provided by one large PV plant rather than a combination of several smaller plants distributed throughout the service territory.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"65 1","pages":"1056-1061 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84428052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105952
K. Mitchell, H.I. Liu
Analyses are presented of greater than 12% efficient ZnO/thin CdS/CIS devices, focusing on spectral response and light and dark current-voltage (I-V) over a broad range of intensities (0.64-100 mW/cm/sup 2/) and temperatures (100-300 K). Other measurements presented include voltage-dependent spectral response, capacitance-conductance versus voltage, frequency, temperature, and CIS film and contact resistance. It is found that recombination controls device performance above 200 K and tunneling and series resistance dominate low-temperature device behavior. 14.1%, 3.5 cm/sup 2/ active area cell and 11.2%, 938 cm/sup 2/ module aperture area efficiencies are reported.<>
{"title":"Device analysis of CuInSe/sub 2/ solar cells","authors":"K. Mitchell, H.I. Liu","doi":"10.1109/PVSC.1988.105952","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105952","url":null,"abstract":"Analyses are presented of greater than 12% efficient ZnO/thin CdS/CIS devices, focusing on spectral response and light and dark current-voltage (I-V) over a broad range of intensities (0.64-100 mW/cm/sup 2/) and temperatures (100-300 K). Other measurements presented include voltage-dependent spectral response, capacitance-conductance versus voltage, frequency, temperature, and CIS film and contact resistance. It is found that recombination controls device performance above 200 K and tunneling and series resistance dominate low-temperature device behavior. 14.1%, 3.5 cm/sup 2/ active area cell and 11.2%, 938 cm/sup 2/ module aperture area efficiencies are reported.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"26 1","pages":"1461-1468 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"87089718","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105837
D. Marvin, W. Hwang, E. Simburger
The general issue of degradation of optical surfaces on spacecraft is reviewed in order to understand the observed behavior of the Navstar solar cell arrays. The solar arrays on GPS Navstars 1-6 have shown anomalous degradation during the 5-year mission life and beyond. The departure from predicted performance consists of an extra 2.5% per year degradation in excess of the radiation model estimates. Examination of optical solar reflector (OSR) data from a variety of spacecraft reveals variations in OSR degradation rates which correlate with the vehicle design. These data support the idea that contaminants outgassing from the vehicle are photodeposited on the optical surfaces, leading to degradation of their reflectivity. Contamination data taken from an OSR flown on Navstar 5 are used to predict the solar cell array degradation. The predicted effect of contamination on the array output is consistent with the observed behavior of the five Block I vehicles.<>
{"title":"Anomalous solar array performance on GPS","authors":"D. Marvin, W. Hwang, E. Simburger","doi":"10.1109/PVSC.1988.105837","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105837","url":null,"abstract":"The general issue of degradation of optical surfaces on spacecraft is reviewed in order to understand the observed behavior of the Navstar solar cell arrays. The solar arrays on GPS Navstars 1-6 have shown anomalous degradation during the 5-year mission life and beyond. The departure from predicted performance consists of an extra 2.5% per year degradation in excess of the radiation model estimates. Examination of optical solar reflector (OSR) data from a variety of spacecraft reveals variations in OSR degradation rates which correlate with the vehicle design. These data support the idea that contaminants outgassing from the vehicle are photodeposited on the optical surfaces, leading to degradation of their reflectivity. Contamination data taken from an OSR flown on Navstar 5 are used to predict the solar cell array degradation. The predicted effect of contamination on the array output is consistent with the observed behavior of the five Block I vehicles.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"21 1","pages":"913-917"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86191211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105921
C. Chiang
The development of solar cell assemblies with high efficiency, improved reliability, and low cost is described. Specific topics discussed include optimization of cell assemblies, selection and evaluation of adhesives and insulators, fabrication methods, and assembly procedures. Important advances in soldering and reliability are reported, and the cell assembly for the Sandia Baseline Module III is described. It is concluded that soft soldering with Sn62 solder is a practical, reliable, simple, and inexpensive way to bond solar cells to copper heat spreaders.<>
{"title":"Design of cell mounts for photovoltaic concentrator modules","authors":"C. Chiang","doi":"10.1109/PVSC.1988.105921","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105921","url":null,"abstract":"The development of solar cell assemblies with high efficiency, improved reliability, and low cost is described. Specific topics discussed include optimization of cell assemblies, selection and evaluation of adhesives and insulators, fabrication methods, and assembly procedures. Important advances in soldering and reliability are reported, and the cell assembly for the Sandia Baseline Module III is described. It is concluded that soft soldering with Sn62 solder is a practical, reliable, simple, and inexpensive way to bond solar cells to copper heat spreaders.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"304 1","pages":"1327-1332 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82543342","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105929
T. Kobayashi, M. Kimura, Y. Kato, S. Amano, Y. Nakashima, S. Yoshikawa, H. Sugimoto
Achievements and future projects in the fields of polycrystalline and amorphous silicon solar cell manufacturing technologies in Japan are discussed. The target and status of poly-Si solar cell developments in the areas of silicon materials, cast wafers, sheet wafers, and cell fabrication are presented. The target and status of a-Si solar cell development in such areas as high-quality large-area cells, high-productivity low-cost transparent conductive films, and high reliability are also presented.<>
{"title":"Solar cell manufacturing technology in Japan","authors":"T. Kobayashi, M. Kimura, Y. Kato, S. Amano, Y. Nakashima, S. Yoshikawa, H. Sugimoto","doi":"10.1109/PVSC.1988.105929","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105929","url":null,"abstract":"Achievements and future projects in the fields of polycrystalline and amorphous silicon solar cell manufacturing technologies in Japan are discussed. The target and status of poly-Si solar cell developments in the areas of silicon materials, cast wafers, sheet wafers, and cell fabrication are presented. The target and status of a-Si solar cell development in such areas as high-quality large-area cells, high-productivity low-cost transparent conductive films, and high reliability are also presented.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"70 1","pages":"1364-1366 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84120115","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105907
J. Wohlgemuth, R. Klein
The IEEE Standards Coordinating Committee 21, Photovoltaics (PV) and the International Electrotechnical Commission (IEC) Technical Committee (TC82) on Photovoltaics are developing photovoltaic standards. Documents that have been published, are in press, have been approved for publication, or are in the review process, are described. Work is also continuing on preparation of documents for design qualification of modules, on-site systems measurements, and procedures for various environmental tests.<>
{"title":"IEEE and IEC photovoltaic standards update","authors":"J. Wohlgemuth, R. Klein","doi":"10.1109/PVSC.1988.105907","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105907","url":null,"abstract":"The IEEE Standards Coordinating Committee 21, Photovoltaics (PV) and the International Electrotechnical Commission (IEC) Technical Committee (TC82) on Photovoltaics are developing photovoltaic standards. Documents that have been published, are in press, have been approved for publication, or are in the review process, are described. Work is also continuing on preparation of documents for design qualification of modules, on-site systems measurements, and procedures for various environmental tests.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"30 1","pages":"1262-1266 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82759061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105839
M. Chung, D. Meier, J.R. Szedon, J. Bartko
A comparison of the radiation tolerances of MOCVD-grown GaAs/GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The electron radiation was delivered in doses of 1*10/sup 16/ cm/sup -2/ up to a total dose of 1*10/sup 17/ cm/sup -2/ for GaAs/GaAs and a total dose of 7*10/sup 16/ cm/sup -2/ for GaAs/Ge. Following each dose, the cells were annealed at either 250 degrees C or 300 degrees C for 1 h in nitrogen. It was found that the radiation tolerance of the GaAs/Ge cells was superior to that of the GaAs/GaAs cells. DLTS and EBIC measurements are presented.<>
{"title":"Electron radiation and annealing of MOCVD GaAs and GaAs/Ge solar cells","authors":"M. Chung, D. Meier, J.R. Szedon, J. Bartko","doi":"10.1109/PVSC.1988.105839","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105839","url":null,"abstract":"A comparison of the radiation tolerances of MOCVD-grown GaAs/GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The electron radiation was delivered in doses of 1*10/sup 16/ cm/sup -2/ up to a total dose of 1*10/sup 17/ cm/sup -2/ for GaAs/GaAs and a total dose of 7*10/sup 16/ cm/sup -2/ for GaAs/Ge. Following each dose, the cells were annealed at either 250 degrees C or 300 degrees C for 1 h in nitrogen. It was found that the radiation tolerance of the GaAs/Ge cells was superior to that of the GaAs/GaAs cells. DLTS and EBIC measurements are presented.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"96 1","pages":"924-929 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82770471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105827
H. Nahra
The methodology used to assess the probability of no impact of space debris and meteoroids on a spacecraft structure is applied to the space station solar cell array assembly. Starting with space debris and meteoroid flux models, the: (i) projected surface area of the solar cell string circuit of the solar array panel and the mast longeron; (ii) the design lifetime; and (iii) the probability of no impact on the solar mast and solar cell string circuits are determined as a function of particle size. The probability of no impact on the cell string circuits is used to derive the probability of no open-circuit panel. The probability of meeting a certain power requirement at the end of the design lifetime is then calculated as a function of impacting particle size. Coupled with a penetration and damage model correlation that relates the particle size to penetration depth and damage, the results of this analysis can be used to determine the probability of meeting the power requirements, given a degree of redundancy.<>
{"title":"Assessment of the effects of space debris and meteoroids environment on the space station solar array assembly","authors":"H. Nahra","doi":"10.1109/PVSC.1988.105827","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105827","url":null,"abstract":"The methodology used to assess the probability of no impact of space debris and meteoroids on a spacecraft structure is applied to the space station solar cell array assembly. Starting with space debris and meteoroid flux models, the: (i) projected surface area of the solar cell string circuit of the solar array panel and the mast longeron; (ii) the design lifetime; and (iii) the probability of no impact on the solar mast and solar cell string circuits are determined as a function of particle size. The probability of no impact on the cell string circuits is used to derive the probability of no open-circuit panel. The probability of meeting a certain power requirement at the end of the design lifetime is then calculated as a function of impacting particle size. Coupled with a penetration and damage model correlation that relates the particle size to penetration depth and damage, the results of this analysis can be used to determine the probability of meeting the power requirements, given a degree of redundancy.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"73 1","pages":"868-873 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82878761","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105849
C. Chu
A three-dimensional, time-dependent model is developed for parallel gap welding of GaAs/GaAs and GaAs/Ge solar cells. Both GaAs/GaAs and GaAs/Ge solar cells have been welded successfully. However, variations in welding conditions can lead to defects that affect the electrical performance or the reliability of cells interconnected into arrays. In many cases, the main defects are small cracks. The results of the modeling show that cracks can be caused by insufficient dissipation of the heat generated by the welding current. The model also shows that welding cracks can be reduced by changing the welding parameters (reducing weld energy, decreasing the size of the welded region between the probe contact areas). When the calculated welding procedures were implemented, acceptable welds were obtained.<>
{"title":"Weldability of GaAs solar cells on either GaAs or Ge substrates","authors":"C. Chu","doi":"10.1109/PVSC.1988.105849","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105849","url":null,"abstract":"A three-dimensional, time-dependent model is developed for parallel gap welding of GaAs/GaAs and GaAs/Ge solar cells. Both GaAs/GaAs and GaAs/Ge solar cells have been welded successfully. However, variations in welding conditions can lead to defects that affect the electrical performance or the reliability of cells interconnected into arrays. In many cases, the main defects are small cracks. The results of the modeling show that cracks can be caused by insufficient dissipation of the heat generated by the welding current. The model also shows that welding cracks can be reduced by changing the welding parameters (reducing weld energy, decreasing the size of the welded region between the probe contact areas). When the calculated welding procedures were implemented, acceptable welds were obtained.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"46 1","pages":"968-973 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82660609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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