Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105659
S. Guha, J. Yang, A. Pawlikiewicz, T. Glatfelter, R. Ross, S. Ovshinsky
The authors have developed an amorphous silicon alloy-based solar cell with a novel structure. Computer simulation studies show that for a given short-circuit current, it is possible to obtain a higher open-circuit voltage and fill factor than in a conventional cell design. For a nominal 1.5 eV a-SiGe alloy, the fill factor under red illumination can be improved from 0.55 to 0.64 for the same short-circuit current. Experimental cell structures confirm the theoretical prediction. The novel cell design shows a considerable improvement in efficiency. Dynamic internal collection efficiency measurements show reduced recombination in these cells, which gives rise to the observed higher fill factors. Incorporation of this structure in the bottom cell of a triple device has resulted in the achievement of 13.7% efficiency under global AM1.5 illumination.<>
{"title":"A novel design for amorphous silicon alloy solar cells","authors":"S. Guha, J. Yang, A. Pawlikiewicz, T. Glatfelter, R. Ross, S. Ovshinsky","doi":"10.1109/PVSC.1988.105659","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105659","url":null,"abstract":"The authors have developed an amorphous silicon alloy-based solar cell with a novel structure. Computer simulation studies show that for a given short-circuit current, it is possible to obtain a higher open-circuit voltage and fill factor than in a conventional cell design. For a nominal 1.5 eV a-SiGe alloy, the fill factor under red illumination can be improved from 0.55 to 0.64 for the same short-circuit current. Experimental cell structures confirm the theoretical prediction. The novel cell design shows a considerable improvement in efficiency. Dynamic internal collection efficiency measurements show reduced recombination in these cells, which gives rise to the observed higher fill factors. Incorporation of this structure in the bottom cell of a triple device has resulted in the achievement of 13.7% efficiency under global AM1.5 illumination.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"22 4 1","pages":"79-84 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"77124864","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105834
G. Augustine, A.W. Smith, A. Rohatgi, C. Keavney
InP solar cells were modeled before and after proton irradiation using a PC-1D computer model. It was necessary to include bandgap narrowing in the n/sup +/ emitter to match the calculated and measured quantum efficiency, leakage current, and cell data simultaneously. A high-efficiency ( approximately=18.2%, AM0) InP solar cell was fabricated and modeled successfully. Guidelines are provided for achieving greater than 22% efficiency for InP cells. A 10 MeV proton irradiation with a dose of 2*10/sup 13/ cm/sup -2/ reduces the cell performance of a 16.3% cell to 11% by introducing the deep levels at an E/sub v/ of +0.29 eV and an E/sub v/ of +0.52 eV. Modeling showed that this performance degradation is associated with a decrease in bulk lifetime from 0.75 to 0.028 ns with no appreciable change in front surface recombination velocity.<>
{"title":"Characterization and modeling of InP solar cells","authors":"G. Augustine, A.W. Smith, A. Rohatgi, C. Keavney","doi":"10.1109/PVSC.1988.105834","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105834","url":null,"abstract":"InP solar cells were modeled before and after proton irradiation using a PC-1D computer model. It was necessary to include bandgap narrowing in the n/sup +/ emitter to match the calculated and measured quantum efficiency, leakage current, and cell data simultaneously. A high-efficiency ( approximately=18.2%, AM0) InP solar cell was fabricated and modeled successfully. Guidelines are provided for achieving greater than 22% efficiency for InP cells. A 10 MeV proton irradiation with a dose of 2*10/sup 13/ cm/sup -2/ reduces the cell performance of a 16.3% cell to 11% by introducing the deep levels at an E/sub v/ of +0.29 eV and an E/sub v/ of +0.52 eV. Modeling showed that this performance degradation is associated with a decrease in bulk lifetime from 0.75 to 0.028 ns with no appreciable change in front surface recombination velocity.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"903-908 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76815706","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105807
K. Bertness, M. Ristow, H. C. Hamaker
A p/n GaAs solar cell with 24.0% efficiency under 1-sun global illumination (AM1.5, 1000 W/m/sup 2/) has been grown in a multiwafer organometallic vapor-phase epitaxy (OMVPE) reactor. This reactor has demonstrated good uniformity both from run to run and within a single run as part of a pilot line for the batch production of high-efficiency GaAs cells. The 24% efficiency value represents the highest efficiency reported to date for any solar cell under these conditions. The improved performance of these cells is believed to be mostly due to careful control of the emitter doping.<>
{"title":"High-efficiency GaAs solar cells from a multiwafer OMVPE reactor","authors":"K. Bertness, M. Ristow, H. C. Hamaker","doi":"10.1109/PVSC.1988.105807","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105807","url":null,"abstract":"A p/n GaAs solar cell with 24.0% efficiency under 1-sun global illumination (AM1.5, 1000 W/m/sup 2/) has been grown in a multiwafer organometallic vapor-phase epitaxy (OMVPE) reactor. This reactor has demonstrated good uniformity both from run to run and within a single run as part of a pilot line for the batch production of high-efficiency GaAs cells. The 24% efficiency value represents the highest efficiency reported to date for any solar cell under these conditions. The improved performance of these cells is believed to be mostly due to careful control of the emitter doping.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"144 1","pages":"769-770 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76798267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105932
A. Goetzberger, A. Rauber
The status of techniques for the production of sheets, ribbons, and foils of silicon for solar cells is reviewed. Technical problems and economic constraints are analyzed. The horizontal support web technique relies on a wedge-shaped growth interface which decouples the pulling velocity and the growth velocity which are nearly perpendicular to each other. The growing ribbon floats on a silicon melt that is contained in a long silicon crucible and is withdrawn to one side. In the ramp assistant foil technique, the silicon melt is contained in a relatively flat crucible that is open on one side. A preheated substrate is moved across this opening, and some of the melt solidifies on the surface. The silicon-sheets-from-powder technique starts from Si powder or granular silicon (grain size: 50-500 mu m). Three steps are needed to obtain the final ribbon. It is concluded that although the basic ideas as well as the results of these three methods are very distinct, evaluation of their respective merits is difficult.<>
{"title":"Development in silicon sheet technologies","authors":"A. Goetzberger, A. Rauber","doi":"10.1109/PVSC.1988.105932","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105932","url":null,"abstract":"The status of techniques for the production of sheets, ribbons, and foils of silicon for solar cells is reviewed. Technical problems and economic constraints are analyzed. The horizontal support web technique relies on a wedge-shaped growth interface which decouples the pulling velocity and the growth velocity which are nearly perpendicular to each other. The growing ribbon floats on a silicon melt that is contained in a long silicon crucible and is withdrawn to one side. In the ramp assistant foil technique, the silicon melt is contained in a relatively flat crucible that is open on one side. A preheated substrate is moved across this opening, and some of the melt solidifies on the surface. The silicon-sheets-from-powder technique starts from Si powder or granular silicon (grain size: 50-500 mu m). Three steps are needed to obtain the final ribbon. It is concluded that although the basic ideas as well as the results of these three methods are very distinct, evaluation of their respective merits is difficult.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"96 1","pages":"1371-1374 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79067418","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105660
R. Arya, J. Newton, B. Fieselmann
The performance of single-junction a-SiGe:H p-i-n solar cells has been optimized by addressing the alloy composition of the n-layer, the importance of the i(a-SiGe:H)/n interface, and the modification of hole transport in the intrinsic layer by low-level boron doping. The dark conductivity of an a-SiGe:H n-layer was about one order of magnitude lower than that of an a-Si:H n-layer, with a difference of 0.092 eV in the activation energy. Devices with an a-Si:H n-layer have superior performance with higher short-circuit current and FF (fill factor). An inverse graded layer at the i/n interface further improves the FF. Low-level boron doping of the i-layer shifts the Fermi level and changes the charge state of the recombination centers, resulting in an improvement in the long-wavelength response of devices. This optimization has led to an a-SiGe:H solar cell with a conversion efficiency of 10.1% for a short-circuit current density of 20.1 mA/cm/sup 2/.<>
{"title":"Phosphorous and boron doping of a-Si-Ge:H alloys and its effect on p-i-n solar cells","authors":"R. Arya, J. Newton, B. Fieselmann","doi":"10.1109/PVSC.1988.105660","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105660","url":null,"abstract":"The performance of single-junction a-SiGe:H p-i-n solar cells has been optimized by addressing the alloy composition of the n-layer, the importance of the i(a-SiGe:H)/n interface, and the modification of hole transport in the intrinsic layer by low-level boron doping. The dark conductivity of an a-SiGe:H n-layer was about one order of magnitude lower than that of an a-Si:H n-layer, with a difference of 0.092 eV in the activation energy. Devices with an a-Si:H n-layer have superior performance with higher short-circuit current and FF (fill factor). An inverse graded layer at the i/n interface further improves the FF. Low-level boron doping of the i-layer shifts the Fermi level and changes the charge state of the recombination centers, resulting in an improvement in the long-wavelength response of devices. This optimization has led to an a-SiGe:H solar cell with a conversion efficiency of 10.1% for a short-circuit current density of 20.1 mA/cm/sup 2/.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"85-90 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83100885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105670
Y. Tsuo, Y. Xu, A. Mascarenhas, S. Deb, A. K. Barua
The ion-beam hydrogenation of undoped amorphous silicon for solar cells obtained by dehydrogenation of glow-discharge-deposited a-Si:H, by glow-discharge deposition at 480 degrees C, and by RF magnetron-sputter deposition was investigated. A Kaufman ion source was used to introduce hydrogen atoms into the a-Si:H. Highly photosensitive a-Si:H films with up to 20 at.% hydrogen bonded predominantly as monohydrides were obtained. The authors report results of Raman Scattering measurements of magnetron-sputtering-deposited amorphous silicon before and after hydrogenation, comparisons of ion-beam and RF posthydrogenation techniques, and a possible application of the ion-beam hydrogenation technique.<>
{"title":"Recent results on ion-beam hydrogenation of amorphous silicon","authors":"Y. Tsuo, Y. Xu, A. Mascarenhas, S. Deb, A. K. Barua","doi":"10.1109/PVSC.1988.105670","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105670","url":null,"abstract":"The ion-beam hydrogenation of undoped amorphous silicon for solar cells obtained by dehydrogenation of glow-discharge-deposited a-Si:H, by glow-discharge deposition at 480 degrees C, and by RF magnetron-sputter deposition was investigated. A Kaufman ion source was used to introduce hydrogen atoms into the a-Si:H. Highly photosensitive a-Si:H films with up to 20 at.% hydrogen bonded predominantly as monohydrides were obtained. The authors report results of Raman Scattering measurements of magnetron-sputtering-deposited amorphous silicon before and after hydrogenation, comparisons of ion-beam and RF posthydrogenation techniques, and a possible application of the ion-beam hydrogenation technique.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"10 1","pages":"119-122 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"81871048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105849
C. Chu
A three-dimensional, time-dependent model is developed for parallel gap welding of GaAs/GaAs and GaAs/Ge solar cells. Both GaAs/GaAs and GaAs/Ge solar cells have been welded successfully. However, variations in welding conditions can lead to defects that affect the electrical performance or the reliability of cells interconnected into arrays. In many cases, the main defects are small cracks. The results of the modeling show that cracks can be caused by insufficient dissipation of the heat generated by the welding current. The model also shows that welding cracks can be reduced by changing the welding parameters (reducing weld energy, decreasing the size of the welded region between the probe contact areas). When the calculated welding procedures were implemented, acceptable welds were obtained.<>
{"title":"Weldability of GaAs solar cells on either GaAs or Ge substrates","authors":"C. Chu","doi":"10.1109/PVSC.1988.105849","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105849","url":null,"abstract":"A three-dimensional, time-dependent model is developed for parallel gap welding of GaAs/GaAs and GaAs/Ge solar cells. Both GaAs/GaAs and GaAs/Ge solar cells have been welded successfully. However, variations in welding conditions can lead to defects that affect the electrical performance or the reliability of cells interconnected into arrays. In many cases, the main defects are small cracks. The results of the modeling show that cracks can be caused by insufficient dissipation of the heat generated by the welding current. The model also shows that welding cracks can be reduced by changing the welding parameters (reducing weld energy, decreasing the size of the welded region between the probe contact areas). When the calculated welding procedures were implemented, acceptable welds were obtained.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"46 1","pages":"968-973 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82660609","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105767
F. Sanii, R. J. Schwartz, R.F. Pierret, W. Au
A measurement technique is described which makes it possible to monitor the lifetime and surface recombination velocity of the starting wafer as well as a partially or completely processed wafer in the Si solar-cell fabrication process. This technique uses an infrared laser to monitor the carrier concentration via free carrier absorption while periodically exciting free carriers by means of a visible laser. The excited laser is sinusoidally modulated with an electro-optical modulator at frequencies of 100 Hz to 100 kHz. The free carriers generated by the exciter beam attenuate the probe beam, and the resultant output is detected with a phase-sensitive lock-in amplifier. The quantities measured are the amplitude and the phase of the detected signal relative to the exciter beam. The measured data are then fitted to theoretical expressions, and the bulk lifetime and surface recombination velocities are determined. The amplitude and phase are independent quantities, and the computed values from the two sets of data provide a self-consistency test.<>
{"title":"The measurement of bulk and surface recombination by means of modulated free carrier absorption","authors":"F. Sanii, R. J. Schwartz, R.F. Pierret, W. Au","doi":"10.1109/PVSC.1988.105767","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105767","url":null,"abstract":"A measurement technique is described which makes it possible to monitor the lifetime and surface recombination velocity of the starting wafer as well as a partially or completely processed wafer in the Si solar-cell fabrication process. This technique uses an infrared laser to monitor the carrier concentration via free carrier absorption while periodically exciting free carriers by means of a visible laser. The excited laser is sinusoidally modulated with an electro-optical modulator at frequencies of 100 Hz to 100 kHz. The free carriers generated by the exciter beam attenuate the probe beam, and the resultant output is detected with a phase-sensitive lock-in amplifier. The quantities measured are the amplitude and the phase of the detected signal relative to the exciter beam. The measured data are then fitted to theoretical expressions, and the bulk lifetime and surface recombination velocities are determined. The amplitude and phase are independent quantities, and the computed values from the two sets of data provide a self-consistency test.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"11 1","pages":"575-580 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82341668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105907
J. Wohlgemuth, R. Klein
The IEEE Standards Coordinating Committee 21, Photovoltaics (PV) and the International Electrotechnical Commission (IEC) Technical Committee (TC82) on Photovoltaics are developing photovoltaic standards. Documents that have been published, are in press, have been approved for publication, or are in the review process, are described. Work is also continuing on preparation of documents for design qualification of modules, on-site systems measurements, and procedures for various environmental tests.<>
{"title":"IEEE and IEC photovoltaic standards update","authors":"J. Wohlgemuth, R. Klein","doi":"10.1109/PVSC.1988.105907","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105907","url":null,"abstract":"The IEEE Standards Coordinating Committee 21, Photovoltaics (PV) and the International Electrotechnical Commission (IEC) Technical Committee (TC82) on Photovoltaics are developing photovoltaic standards. Documents that have been published, are in press, have been approved for publication, or are in the review process, are described. Work is also continuing on preparation of documents for design qualification of modules, on-site systems measurements, and procedures for various environmental tests.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"30 1","pages":"1262-1266 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82759061","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105839
M. Chung, D. Meier, J.R. Szedon, J. Bartko
A comparison of the radiation tolerances of MOCVD-grown GaAs/GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The electron radiation was delivered in doses of 1*10/sup 16/ cm/sup -2/ up to a total dose of 1*10/sup 17/ cm/sup -2/ for GaAs/GaAs and a total dose of 7*10/sup 16/ cm/sup -2/ for GaAs/Ge. Following each dose, the cells were annealed at either 250 degrees C or 300 degrees C for 1 h in nitrogen. It was found that the radiation tolerance of the GaAs/Ge cells was superior to that of the GaAs/GaAs cells. DLTS and EBIC measurements are presented.<>
{"title":"Electron radiation and annealing of MOCVD GaAs and GaAs/Ge solar cells","authors":"M. Chung, D. Meier, J.R. Szedon, J. Bartko","doi":"10.1109/PVSC.1988.105839","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105839","url":null,"abstract":"A comparison of the radiation tolerances of MOCVD-grown GaAs/GaAs cells and GaAs/Ge cells was undertaken using 1 MeV electrons. The electron radiation was delivered in doses of 1*10/sup 16/ cm/sup -2/ up to a total dose of 1*10/sup 17/ cm/sup -2/ for GaAs/GaAs and a total dose of 7*10/sup 16/ cm/sup -2/ for GaAs/Ge. Following each dose, the cells were annealed at either 250 degrees C or 300 degrees C for 1 h in nitrogen. It was found that the radiation tolerance of the GaAs/Ge cells was superior to that of the GaAs/GaAs cells. DLTS and EBIC measurements are presented.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"96 1","pages":"924-929 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82770471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：