Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105961
A. Rockett, T. Lommasson, L. Yang, H. Talieh, P. Campos, J. Thornton
The initial results of experiments characterizing CuInSe/sub 2/ deposition by a hybrid sputtering-and-evaporation technique are presented. The method yields films with compositions and structural properties comparable with those commonly accepted for polycrystalline CuInSe/sub 2/ over a large composition range at growth temperatures up to 450 degrees C. Film compositions are uniform to within +or-1 atomic percent, and nonuniformities can be directly related to the deposition geometry. The Se flux is shown to play a major role in determining both the Se and the In contents of the films at elevated temperatures. The substrate properties strongly affect the film composition. Layers deposited on sputtered Mo surfaces exhibit a lower In content than films on glass at all temperatures examined. Cu, In, and Se diffusion into the column boundaries of the Mo substrates is observed at all growth temperatures.<>
{"title":"Deposition of CuInSe/sub 2/ by the hybrid sputtering-and-evaporation method","authors":"A. Rockett, T. Lommasson, L. Yang, H. Talieh, P. Campos, J. Thornton","doi":"10.1109/PVSC.1988.105961","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105961","url":null,"abstract":"The initial results of experiments characterizing CuInSe/sub 2/ deposition by a hybrid sputtering-and-evaporation technique are presented. The method yields films with compositions and structural properties comparable with those commonly accepted for polycrystalline CuInSe/sub 2/ over a large composition range at growth temperatures up to 450 degrees C. Film compositions are uniform to within +or-1 atomic percent, and nonuniformities can be directly related to the deposition geometry. The Se flux is shown to play a major role in determining both the Se and the In contents of the films at elevated temperatures. The substrate properties strongly affect the film composition. Layers deposited on sputtered Mo surfaces exhibit a lower In content than films on glass at all temperatures examined. Cu, In, and Se diffusion into the column boundaries of the Mo substrates is observed at all growth temperatures.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"17 1","pages":"1505-1509 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73777240","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105787
S. Ringel, A. Rohatgi
A methodology is developed to determine minority carrier lifetime and recombination velocity in high-efficiency GaAs p/n heteroface solar cells. A combination of measurements and modeling is used to demonstrate that a base lifetime of 8 ns and a heteroface recombination velocity of 1.25*10/sup 5/ cm/s are necessary to simulate the spectral response, cell data, and leakage current in a 21.2% efficient GaAs cell. Optimization of the p/n heteroface structure shows that AM1.5 one-sun efficiencies of approximately 25% are achievable from a thin base/buffer design with a base lifetime of only 15 ns and a well-passivated back surface. In addition, it is shown that the doping dependence of the Shockley-Read-Hall lifetime is an important consideration in GaAs device modeling, especially if a shallow level ( approximately E/sub t/=0.2 eV) limits the bulk lifetime.<>
{"title":"Material quality and design optimization for high efficiency GaAs solar cells","authors":"S. Ringel, A. Rohatgi","doi":"10.1109/PVSC.1988.105787","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105787","url":null,"abstract":"A methodology is developed to determine minority carrier lifetime and recombination velocity in high-efficiency GaAs p/n heteroface solar cells. A combination of measurements and modeling is used to demonstrate that a base lifetime of 8 ns and a heteroface recombination velocity of 1.25*10/sup 5/ cm/s are necessary to simulate the spectral response, cell data, and leakage current in a 21.2% efficient GaAs cell. Optimization of the p/n heteroface structure shows that AM1.5 one-sun efficiencies of approximately 25% are achievable from a thin base/buffer design with a base lifetime of only 15 ns and a well-passivated back surface. In addition, it is shown that the doping dependence of the Shockley-Read-Hall lifetime is an important consideration in GaAs device modeling, especially if a shallow level ( approximately E/sub t/=0.2 eV) limits the bulk lifetime.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"23 1","pages":"666-671 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"91202317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105813
T. Uematsu, M. Ida, K. Hane, Y. Hayashi, T. Saitoh
A novel cell structure with aligned V-grooves on each side is proposed to realize very thin silicon solar cells. The thickness can be less than 50 mu m without reduction of mechanical strength. This structure provides a very high light-trapping effect. The light-generated current in this structure is calculated as 40.58 mA/cm/sup 2/ under AM1.5 100 mW/cm/sup 2/ sunlight. This structure is expected to realize high efficiency, close to the limiting efficiency of around 29% and to yield fruitful results in concentrator cells.<>
{"title":"A new light trapping structure for very-thin, high-efficiency silicon solar cells","authors":"T. Uematsu, M. Ida, K. Hane, Y. Hayashi, T. Saitoh","doi":"10.1109/PVSC.1988.105813","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105813","url":null,"abstract":"A novel cell structure with aligned V-grooves on each side is proposed to realize very thin silicon solar cells. The thickness can be less than 50 mu m without reduction of mechanical strength. This structure provides a very high light-trapping effect. The light-generated current in this structure is calculated as 40.58 mA/cm/sup 2/ under AM1.5 100 mW/cm/sup 2/ sunlight. This structure is expected to realize high efficiency, close to the limiting efficiency of around 29% and to yield fruitful results in concentrator cells.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"53 1","pages":"792-795 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90411872","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105660
R. Arya, J. Newton, B. Fieselmann
The performance of single-junction a-SiGe:H p-i-n solar cells has been optimized by addressing the alloy composition of the n-layer, the importance of the i(a-SiGe:H)/n interface, and the modification of hole transport in the intrinsic layer by low-level boron doping. The dark conductivity of an a-SiGe:H n-layer was about one order of magnitude lower than that of an a-Si:H n-layer, with a difference of 0.092 eV in the activation energy. Devices with an a-Si:H n-layer have superior performance with higher short-circuit current and FF (fill factor). An inverse graded layer at the i/n interface further improves the FF. Low-level boron doping of the i-layer shifts the Fermi level and changes the charge state of the recombination centers, resulting in an improvement in the long-wavelength response of devices. This optimization has led to an a-SiGe:H solar cell with a conversion efficiency of 10.1% for a short-circuit current density of 20.1 mA/cm/sup 2/.<>
{"title":"Phosphorous and boron doping of a-Si-Ge:H alloys and its effect on p-i-n solar cells","authors":"R. Arya, J. Newton, B. Fieselmann","doi":"10.1109/PVSC.1988.105660","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105660","url":null,"abstract":"The performance of single-junction a-SiGe:H p-i-n solar cells has been optimized by addressing the alloy composition of the n-layer, the importance of the i(a-SiGe:H)/n interface, and the modification of hole transport in the intrinsic layer by low-level boron doping. The dark conductivity of an a-SiGe:H n-layer was about one order of magnitude lower than that of an a-Si:H n-layer, with a difference of 0.092 eV in the activation energy. Devices with an a-Si:H n-layer have superior performance with higher short-circuit current and FF (fill factor). An inverse graded layer at the i/n interface further improves the FF. Low-level boron doping of the i-layer shifts the Fermi level and changes the charge state of the recombination centers, resulting in an improvement in the long-wavelength response of devices. This optimization has led to an a-SiGe:H solar cell with a conversion efficiency of 10.1% for a short-circuit current density of 20.1 mA/cm/sup 2/.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"85-90 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83100885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105792
C. Goradia, W. Thesling, M. Ghalla-Goradia, I. Weinberg, C. K. Swartz
The authors calculated the expected performance dependence of near-optimally designed shallow homojunction n/sup +/pp/sup +/ InP solar cells on incident intensities up to 200 AMO and temperatures up to 100 degrees C (373 K). Both circular and rectangular cells were considered, the former for use in a Cassegrainian concentrator array at 100 AM0, 80-100 degrees C and the latter for use in a Slats concentrator array at 20 AM0, 80-100 degrees C. With efficiencies near 22% at 80 degrees C, both the circular and rectangular InP shallow homojunction solar cells compare very favorably to GaAs cells of the same design and may be preferable to the GaAs cells for space applications because of the superior radiation tolerance of the InP cells.<>
{"title":"Predicted performance of near-optimally designed indium phosphide space solar cells at high intensities and temperatures","authors":"C. Goradia, W. Thesling, M. Ghalla-Goradia, I. Weinberg, C. K. Swartz","doi":"10.1109/PVSC.1988.105792","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105792","url":null,"abstract":"The authors calculated the expected performance dependence of near-optimally designed shallow homojunction n/sup +/pp/sup +/ InP solar cells on incident intensities up to 200 AMO and temperatures up to 100 degrees C (373 K). Both circular and rectangular cells were considered, the former for use in a Cassegrainian concentrator array at 100 AM0, 80-100 degrees C and the latter for use in a Slats concentrator array at 20 AM0, 80-100 degrees C. With efficiencies near 22% at 80 degrees C, both the circular and rectangular InP shallow homojunction solar cells compare very favorably to GaAs cells of the same design and may be preferable to the GaAs cells for space applications because of the superior radiation tolerance of the InP cells.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"82 1","pages":"695-701 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"83395977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105885
S. Lancashire
A summary of results from an extensive study of batteries for PV power systems is presented. The significant characteristics of high-quality lead-acid and nickel-cadmium batteries with respect to their use in PV power systems are compared and the results of a survey of user experiences are presented. For typical PV systems, comparative system sizings and life-cycle costs are presented for several types of battery. The conditions under which different battery types are most appropriate are identified. It is shown that nickel cadmium batteries are often a more cost-effective option than lead-acid batteries for PV systems. This applies in cold, temperature, and hot climates.<>
{"title":"Life-cycle comparison of different battery types for use with photovoltaic systems","authors":"S. Lancashire","doi":"10.1109/PVSC.1988.105885","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105885","url":null,"abstract":"A summary of results from an extensive study of batteries for PV power systems is presented. The significant characteristics of high-quality lead-acid and nickel-cadmium batteries with respect to their use in PV power systems are compared and the results of a survey of user experiences are presented. For typical PV systems, comparative system sizings and life-cycle costs are presented for several types of battery. The conditions under which different battery types are most appropriate are identified. It is shown that nickel cadmium batteries are often a more cost-effective option than lead-acid batteries for PV systems. This applies in cold, temperature, and hot climates.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"23 1","pages":"1157-1163 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73480674","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105890
G. Barlowe, R. Day, D. Kilfoyle, R. Roberts, G. Smith
An overview of the design and testing of a hybrid system consisting of two North Wind 12 kW wind generators, a 5 kW Solarex photovoltaic array, and a 138 kWh GNB battery bank to provide power for an offshore tactical aircrew combat training system is presented. Test data were collected via a data acquisition system which provided data collection and reduction into hourly averages, system operational status information, current data, and a user system control. During the prototype testing, the system compiled a 100% availability record. The installation of eight offshore platform power systems is discussed.<>
{"title":"Hybrid renewable energy systems for off-shore naval installations","authors":"G. Barlowe, R. Day, D. Kilfoyle, R. Roberts, G. Smith","doi":"10.1109/PVSC.1988.105890","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105890","url":null,"abstract":"An overview of the design and testing of a hybrid system consisting of two North Wind 12 kW wind generators, a 5 kW Solarex photovoltaic array, and a 138 kWh GNB battery bank to provide power for an offshore tactical aircrew combat training system is presented. Test data were collected via a data acquisition system which provided data collection and reduction into hourly averages, system operational status information, current data, and a user system control. During the prototype testing, the system compiled a 100% availability record. The installation of eight offshore platform power systems is discussed.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"2 1","pages":"1179-1181 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"73463366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105859
J.D. Scorfield
Updated and reduced data through day 1995 as well as conclusions about the performance and behavior of the GaAs panel are presented. The performance of the GaAs panel, after initial severe degradation, is encouraging. The results support other data indicating that GaAs solar cells are a viable space power system component. Taking into account recent advances such as Ge substrate use, multibandgap efforts, and significant performance gains, the author concludes that GaAs cells are ready to become the next generation of photovoltaic cells supplying space power for military and commercial missions.<>
{"title":"Status of LIPS-II GaAs after five years in orbit","authors":"J.D. Scorfield","doi":"10.1109/PVSC.1988.105859","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105859","url":null,"abstract":"Updated and reduced data through day 1995 as well as conclusions about the performance and behavior of the GaAs panel are presented. The performance of the GaAs panel, after initial severe degradation, is encouraging. The results support other data indicating that GaAs solar cells are a viable space power system component. Taking into account recent advances such as Ge substrate use, multibandgap efforts, and significant performance gains, the author concludes that GaAs cells are ready to become the next generation of photovoltaic cells supplying space power for military and commercial missions.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"34 1","pages":"1024-1026 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76736837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105988
S.N. Singh, P.K. Singh
An exact theory of spectral response of thin-film epitaxial solar cells is developed, and a new expression for the effective back surface recombination velocity is derived. On the basis of this theory, the spectral response as a function of relevant cell parameters, such as dopings, diffusion lengths, and thicknesses of the substrate and epitaxial layer regions and the dead layer, is calculated. It was found that two effects mainly control the spectral response of epitaxial solar cells: (i) the doping ratio of substrate to epitaxial layer and (ii) the dead layer thickness. The former markedly influences the long wavelength region spectral response, while the latter has a profound effect on the short wavelength response. The theory also predicts a significant contribution from the substrate to the quantum efficiency.<>
{"title":"Exact calculation of back surface recombination velocity and its influence on quantum efficiency of n/sup +/-p-p/sup +/ structure based silicon solar cells","authors":"S.N. Singh, P.K. Singh","doi":"10.1109/PVSC.1988.105988","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105988","url":null,"abstract":"An exact theory of spectral response of thin-film epitaxial solar cells is developed, and a new expression for the effective back surface recombination velocity is derived. On the basis of this theory, the spectral response as a function of relevant cell parameters, such as dopings, diffusion lengths, and thicknesses of the substrate and epitaxial layer regions and the dead layer, is calculated. It was found that two effects mainly control the spectral response of epitaxial solar cells: (i) the doping ratio of substrate to epitaxial layer and (ii) the dead layer thickness. The former markedly influences the long wavelength region spectral response, while the latter has a profound effect on the short wavelength response. The theory also predicts a significant contribution from the substrate to the quantum efficiency.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"176 1","pages":"1629-1634 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76914779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105769
G. Garlick, B.S. Smith
Improved modeling and analysis have been applied to data on Si solar cells made for the Magellan satellite (Venus orbits) at temperatures from -50 to 100 degrees C. Derived saturation currents for the cells have been used to calculate base minority carrier lifetimes. These rise with temperature, showing some saturation near 100 degrees C. Data are quantitatively explained by an energy band model with divacancy levels at 0.25 eV and impurity levels at 0.6 eV above the valance band. Close fits to experimental results are found for concentrations of 6*10/sup 12//cm/sup 3/ and 1.5-2*10/sup 11//cm/sup 3/ for the 0.25 and 0.6 eV levels, respectively. At 100 degrees C the saturation is controlled by the latter, while divacancies affect the lifetimes at lower temperatures. It is concluded that this analysis of quite usual test data for cells, coupled with temperature variation, provides a powerful insight into basic parameters which determine the cell operational performance.<>
{"title":"Improved prediction and analysis of cell performance at elevated temperatures","authors":"G. Garlick, B.S. Smith","doi":"10.1109/PVSC.1988.105769","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105769","url":null,"abstract":"Improved modeling and analysis have been applied to data on Si solar cells made for the Magellan satellite (Venus orbits) at temperatures from -50 to 100 degrees C. Derived saturation currents for the cells have been used to calculate base minority carrier lifetimes. These rise with temperature, showing some saturation near 100 degrees C. Data are quantitatively explained by an energy band model with divacancy levels at 0.25 eV and impurity levels at 0.6 eV above the valance band. Close fits to experimental results are found for concentrations of 6*10/sup 12//cm/sup 3/ and 1.5-2*10/sup 11//cm/sup 3/ for the 0.25 and 0.6 eV levels, respectively. At 100 degrees C the saturation is controlled by the latter, while divacancies affect the lifetimes at lower temperatures. It is concluded that this analysis of quite usual test data for cells, coupled with temperature variation, provides a powerful insight into basic parameters which determine the cell operational performance.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"30 1","pages":"587-590 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85966563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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