Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105730
P. Basore, D. Rover, A. Smith
PC-1D is a finite-element program for modeling semiconductor devices in one dimension on personal computers. It has the ability to address complex issues associated with heavy doping, high-level injection, and transients. Significant improvements have been made to the program, resulting in a new version. The authors describe the enhancements and their application to modern crystalline cells, including new provisions for heterostructures, antireflection coatings and light trapping, an upgraded user interface, and unattended operation for optimization studies.<>
{"title":"PC-1D version 2: enhanced numerical solar cell modelling","authors":"P. Basore, D. Rover, A. Smith","doi":"10.1109/PVSC.1988.105730","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105730","url":null,"abstract":"PC-1D is a finite-element program for modeling semiconductor devices in one dimension on personal computers. It has the ability to address complex issues associated with heavy doping, high-level injection, and transients. Significant improvements have been made to the program, resulting in a new version. The authors describe the enhancements and their application to modern crystalline cells, including new provisions for heterostructures, antireflection coatings and light trapping, an upgraded user interface, and unattended operation for optimization studies.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"124 1","pages":"389-396 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76199665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105946
Ji-Beom Yoo, A. Fahrenbruch, R. Bube
CuInSe/sub 2/-based solar cells were prepared by thermal evaporation using CdS and In/sub 2/O/sub 3/ as window layers, with a thin ZnSe layer between the window layer and the CuInSe/sub 2/. The effects of ZnSe with thicknesses between 200 AA and 2000 AA and ZnSe deposition temperatures between 100 degrees C and 200 degrees C were investigated. For the CdS:In/CdS/ZnSe/CuInSe/sub 2/ cells, as the ZnSe thickness increases, J/sub 0/ decreases and/or the diode factor A increases. For the In/sub 2/O/sub 3//ZnSe/CuInSe/sub 2/ cells the change of J/sub 0/ is much less and there is an increase in the diode factor for increasing ZnSe thickness. Under illumination, the V/sub oc/ of the cell is the same with and without ZnSe and the cells with ZnSe layers thicker than 400 AA show strong photosuppression.<>
{"title":"Preparation and properties of CuInSe/sub 2/ solar cells with a ZnSe intermediate layer","authors":"Ji-Beom Yoo, A. Fahrenbruch, R. Bube","doi":"10.1109/PVSC.1988.105946","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105946","url":null,"abstract":"CuInSe/sub 2/-based solar cells were prepared by thermal evaporation using CdS and In/sub 2/O/sub 3/ as window layers, with a thin ZnSe layer between the window layer and the CuInSe/sub 2/. The effects of ZnSe with thicknesses between 200 AA and 2000 AA and ZnSe deposition temperatures between 100 degrees C and 200 degrees C were investigated. For the CdS:In/CdS/ZnSe/CuInSe/sub 2/ cells, as the ZnSe thickness increases, J/sub 0/ decreases and/or the diode factor A increases. For the In/sub 2/O/sub 3//ZnSe/CuInSe/sub 2/ cells the change of J/sub 0/ is much less and there is an increase in the diode factor for increasing ZnSe thickness. Under illumination, the V/sub oc/ of the cell is the same with and without ZnSe and the cells with ZnSe layers thicker than 400 AA show strong photosuppression.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"58 1","pages":"1431-1436 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86888373","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105678
G. Schumm, G. H. Bauer
The gap state distribution in a-Si:H for solar cells was investigated by phase shift analysis of modulated photocurrents. Two peaks in the density of states at 0.6 and 0.38 eV below E/sub c/ were detected. Upon light soaking the peaks of shallow states were quenched and the peaks of deep states were enhanced; the original distribution was restored by annealing above 120 degrees C. The formation and annealing kinetics of the deep states were studied. A power law was obtained for the formation. Activation energies for annealing were centered around 1.1 eV, and a correlation of the activation energies with the energetic position of defects in the gap was obtained. To explain the results, a model of the defect structure involving charged and neutral Si defects in different hybridization states is discussed.<>
{"title":"Energy-resolved defect kinetics in a-Si:H investigated by modulated photocurrents","authors":"G. Schumm, G. H. Bauer","doi":"10.1109/PVSC.1988.105678","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105678","url":null,"abstract":"The gap state distribution in a-Si:H for solar cells was investigated by phase shift analysis of modulated photocurrents. Two peaks in the density of states at 0.6 and 0.38 eV below E/sub c/ were detected. Upon light soaking the peaks of shallow states were quenched and the peaks of deep states were enhanced; the original distribution was restored by annealing above 120 degrees C. The formation and annealing kinetics of the deep states were studied. A power law was obtained for the formation. Activation energies for annealing were centered around 1.1 eV, and a correlation of the activation energies with the energetic position of defects in the gap was obtained. To explain the results, a model of the defect structure involving charged and neutral Si defects in different hybridization states is discussed.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"70 1","pages":"154-159 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86256698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105743
N. Kim, R. Burgess, B. Stanbery, R. Mickelsen, J. Avery, R. McClelland, B. King, M. Boden, R. Gale
High-efficiency, mechanically stacked tandem junction solar cells based on a double-heterostructure GaAs single-crystal thin-film top cell and a polycrystalline CuInSe/sub 2/ (CIS) thin-film bottom cell were developed to meet the power needs projected for future spacecraft. The best performance of these tandem cells achieved so far is 21.3% AM0, one sun, for a 1 cm/sup 2/ four-terminal device at 28 degrees C. A GaAs subcell efficiency of 18.8% and a CuInSe/sub 2/ subcell efficiency of 2.5% were measured for this device. Top cell efficiency up to 19.5% and lower cell efficiency up to 2.83% were measured for other tandem cells. A 3.0% CIS cell was achieved using a GaAs filter with a glycerol optical matching medium. This demonstrated efficiency provides for specific powers up to 620 W/kg when 50 mu m thick substrate and cover glasses are incorporated. Favorable results were obtained from thermal cycling experiments conducted to evaluate survivability of thin GaAs films in adhesive/glass sandwich structures.<>
{"title":"High efficiency GaAs/CuInSe/sub 2/ tandem junction solar cells","authors":"N. Kim, R. Burgess, B. Stanbery, R. Mickelsen, J. Avery, R. McClelland, B. King, M. Boden, R. Gale","doi":"10.1109/PVSC.1988.105743","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105743","url":null,"abstract":"High-efficiency, mechanically stacked tandem junction solar cells based on a double-heterostructure GaAs single-crystal thin-film top cell and a polycrystalline CuInSe/sub 2/ (CIS) thin-film bottom cell were developed to meet the power needs projected for future spacecraft. The best performance of these tandem cells achieved so far is 21.3% AM0, one sun, for a 1 cm/sup 2/ four-terminal device at 28 degrees C. A GaAs subcell efficiency of 18.8% and a CuInSe/sub 2/ subcell efficiency of 2.5% were measured for this device. Top cell efficiency up to 19.5% and lower cell efficiency up to 2.83% were measured for other tandem cells. A 3.0% CIS cell was achieved using a GaAs filter with a glycerol optical matching medium. This demonstrated efficiency provides for specific powers up to 620 W/kg when 50 mu m thick substrate and cover glasses are incorporated. Favorable results were obtained from thermal cycling experiments conducted to evaluate survivability of thin GaAs films in adhesive/glass sandwich structures.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"49 1","pages":"457-461 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88883848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105774
Rushikesh M. Patel, S. W. Gersten, D. Perrachione, Y. Yeh, D. K. Wagner, R. Morris
Rugged, thin (<4 mil thick) GaAs-on-germanium 4 cm*4 cm solar cells with an AM0 conversion efficiency of up to 16.9% have been demonstrated. A processing technique suitable for high-volume production of large-area, thin cells has been established. The thinning technique developed here can also be used in the fabrication of high-efficiency lightweight GaAs/Ge and AlGaAs/Ge monolithic tandem cells.<>
坚固，薄(>
{"title":"Lightweight GaAs/Ge solar cells","authors":"Rushikesh M. Patel, S. W. Gersten, D. Perrachione, Y. Yeh, D. K. Wagner, R. Morris","doi":"10.1109/PVSC.1988.105774","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105774","url":null,"abstract":"Rugged, thin (<4 mil thick) GaAs-on-germanium 4 cm*4 cm solar cells with an AM0 conversion efficiency of up to 16.9% have been demonstrated. A processing technique suitable for high-volume production of large-area, thin cells has been established. The thinning technique developed here can also be used in the fabrication of high-efficiency lightweight GaAs/Ge and AlGaAs/Ge monolithic tandem cells.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"6 1","pages":"607-610 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88537314","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105967
K. Mitchell, G. Pollock, A. Mason
A 7.3%, 3.3 cm/sup 2/ active area efficient ZnO/thin CdS/CuInS/sub 2/ solar cell is demonstrated with 22.7 mA/cm/sup 2/ J/sub sc/, 592 mV V/sub oc/, and 0.546 fill factor. X-ray diffraction shows that the CuInS/sub 2/ films with are predominantly randomly oriented chalcopyrite CuInS/sub 2/ with additional minor phases such as In/sub 2/S/sub 3/ and Cu/sub 2-x/S present. Optical transmission and reflection data for CuInS/sub 2/ films on glass are also shown. Optical transmission implies a 1.4-eV bandgap, less than the 1.55-eV bandgap for single-crystal CuInS/sub 2/, but consistent with other reported thin-film results. It is concluded that the resolution of several materials, device, and fabrication issues will result in efficiencies of greater than 15%.<>
{"title":"7.3% efficient CuInSe/sub 2/ solar cell","authors":"K. Mitchell, G. Pollock, A. Mason","doi":"10.1109/PVSC.1988.105967","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105967","url":null,"abstract":"A 7.3%, 3.3 cm/sup 2/ active area efficient ZnO/thin CdS/CuInS/sub 2/ solar cell is demonstrated with 22.7 mA/cm/sup 2/ J/sub sc/, 592 mV V/sub oc/, and 0.546 fill factor. X-ray diffraction shows that the CuInS/sub 2/ films with are predominantly randomly oriented chalcopyrite CuInS/sub 2/ with additional minor phases such as In/sub 2/S/sub 3/ and Cu/sub 2-x/S present. Optical transmission and reflection data for CuInS/sub 2/ films on glass are also shown. Optical transmission implies a 1.4-eV bandgap, less than the 1.55-eV bandgap for single-crystal CuInS/sub 2/, but consistent with other reported thin-film results. It is concluded that the resolution of several materials, device, and fabrication issues will result in efficiencies of greater than 15%.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"1542-1544 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88645736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105818
D. Brinker, R. E. Hart, I. Weinberg, B.S. Smith
Performance data are presented for indium phosphide n/sup +/p homojunction solar cell modules on the LIPS III flight experiment. The objective of the experiment is to measure the performance of InP cells in the natural radiation environment of the 1100 km altitude, 60+ degrees inclination orbit. Analysis of flight data indicates that the performance of the four cells throughout the first year is near expected values. No degradation in short-circuit current was seen, as was expected from radiation tolerance studies of similar cells. Details of the cell structure and flight module design are discussed. The results of the temperature dependency and radiation tolerance studies necessary for normalization and analysis of the data are included.<>
{"title":"InP homojunction solar cell performance on the LPS III flight experiment","authors":"D. Brinker, R. E. Hart, I. Weinberg, B.S. Smith","doi":"10.1109/PVSC.1988.105818","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105818","url":null,"abstract":"Performance data are presented for indium phosphide n/sup +/p homojunction solar cell modules on the LIPS III flight experiment. The objective of the experiment is to measure the performance of InP cells in the natural radiation environment of the 1100 km altitude, 60+ degrees inclination orbit. Analysis of flight data indicates that the performance of the four cells throughout the first year is near expected values. No degradation in short-circuit current was seen, as was expected from radiation tolerance studies of similar cells. Details of the cell structure and flight module design are discussed. The results of the temperature dependency and radiation tolerance studies necessary for normalization and analysis of the data are included.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"819-823 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"88673934","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105673
D. Shen, J. Conde, V. Chu, J.Z. Liu, A. Maruyama, S. Aljishi, Z. Smith, S. Wagner
The authors report a novel technique for measuring the density distribution of the D/sup 0/-/ state in a-Si:H before and after light soaking and in a-SiGe:H,F alloys for solar cells. Electron time-of-flight (TOF) measurements as a function of temperature form the basis of this technique. The deep trapping of electrons controls the mobility-lifetime product ( mu tau )/sub n/, which is evaluated from the integrated TOF current. The dominant deep trap is the D/sup 0/-/ level. The authors determine the density of D/sup 0/-/ states in a:SiGe:H,F that peak at SiE/sub c/-(0.40 to 0.45) eV with maxima in the 10/sup 18/ to 10/sup 19/-cm/sup -3/ eV/sup -1/ range. In a-Si:H, the peak lies at E/sub c/-0.45 eV; it is observed to grow with increasing light-soaking time.<>
{"title":"Dangling-bond states in a SiGe:H,F measured by temperature-dependent mu tau","authors":"D. Shen, J. Conde, V. Chu, J.Z. Liu, A. Maruyama, S. Aljishi, Z. Smith, S. Wagner","doi":"10.1109/PVSC.1988.105673","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105673","url":null,"abstract":"The authors report a novel technique for measuring the density distribution of the D/sup 0/-/ state in a-Si:H before and after light soaking and in a-SiGe:H,F alloys for solar cells. Electron time-of-flight (TOF) measurements as a function of temperature form the basis of this technique. The deep trapping of electrons controls the mobility-lifetime product ( mu tau )/sub n/, which is evaluated from the integrated TOF current. The dominant deep trap is the D/sup 0/-/ level. The authors determine the density of D/sup 0/-/ states in a:SiGe:H,F that peak at SiE/sub c/-(0.40 to 0.45) eV with maxima in the 10/sup 18/ to 10/sup 19/-cm/sup -3/ eV/sup -1/ range. In a-Si:H, the peak lies at E/sub c/-0.45 eV; it is observed to grow with increasing light-soaking time.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"24 1","pages":"135-138 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89316309","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105895
R. Gosain, P. Kumar, M. Murthy
A very-low power TV transmitter is described, and details of its photovoltaic power supply are given. Design, installation, commissioning, and performance experiences are also presented. The total VLPT system consists of a TV receive-only and a very-low-power (10 W) TV transmitter operated in the VHF frequency range of band 3. Results show that only one power source failed and another tripped.<>
{"title":"Photovoltaic power systems for very low power TV transmitters in India","authors":"R. Gosain, P. Kumar, M. Murthy","doi":"10.1109/PVSC.1988.105895","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105895","url":null,"abstract":"A very-low power TV transmitter is described, and details of its photovoltaic power supply are given. Design, installation, commissioning, and performance experiences are also presented. The total VLPT system consists of a TV receive-only and a very-low-power (10 W) TV transmitter operated in the VHF frequency range of band 3. Results show that only one power source failed and another tripped.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"130 1","pages":"1206-1210 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86668579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105669
T. Ishimura, Y. Okayasu, H. Yamamoto, K. Fukui
The surface reaction in the glow discharge plasma growth of a-Si:H for solar cells was studied by the intermittent deposition method in which two kinds of gases are exchanged at short intervals; one is used for growing silicon film: the other for modifying the growing surface. It was found that the fluorine elimination process has an activation energy of 7 meV and that fluorine in the region of 8 A below the growing surface is removed by hydrogen radicals at 250 degrees C. The Si:H prepared by this method has a high photoconductivity of 4*10/sup -4/ ( Omega -cm)/sup -1/ under AM1 100-mW/cm/sup 2/ light and a high photosensitivity of 10/sup 6/. This film shows smaller photodegradation than conventional a-Si:H.<>
{"title":"A study on the surface reaction in the growth of amorphous silicon by intermittent deposition method","authors":"T. Ishimura, Y. Okayasu, H. Yamamoto, K. Fukui","doi":"10.1109/PVSC.1988.105669","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105669","url":null,"abstract":"The surface reaction in the glow discharge plasma growth of a-Si:H for solar cells was studied by the intermittent deposition method in which two kinds of gases are exchanged at short intervals; one is used for growing silicon film: the other for modifying the growing surface. It was found that the fluorine elimination process has an activation energy of 7 meV and that fluorine in the region of 8 A below the growing surface is removed by hydrogen radicals at 250 degrees C. The Si:H prepared by this method has a high photoconductivity of 4*10/sup -4/ ( Omega -cm)/sup -1/ under AM1 100-mW/cm/sup 2/ light and a high photosensitivity of 10/sup 6/. This film shows smaller photodegradation than conventional a-Si:H.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"3 1","pages":"114-118 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"86965806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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