Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105833
N. Pearsall, C. Goodbody, O. Oparaku, A. Dollery, R. Hill
Results of proton exposure experiments on ITO/InP solar cells, for a range of proton energies between 2 and 50 MeV and for a range of fluences up to 1E12 proton/cm/sup 2/, are presented. The cells are mounted on a rocker during irradiation, to simulate hemispherical isotropic radiation. Data from ITO/InP cells are compared to those for commercially available GaAs and Si cells irradiated under the same conditions. At all proton energies, the ITO/InP cells showed a significantly lower percentage of degradation than the other types of cell. It is concluded that the two types of cell operate in a similar manner. From the data, the ITO/InP structure appears to present the same advantages with respect to radiation resistance as does the homojunction structure.<>
{"title":"Effect of isotropic proton irradiation on the performance of ITO/InP solar cells","authors":"N. Pearsall, C. Goodbody, O. Oparaku, A. Dollery, R. Hill","doi":"10.1109/PVSC.1988.105833","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105833","url":null,"abstract":"Results of proton exposure experiments on ITO/InP solar cells, for a range of proton energies between 2 and 50 MeV and for a range of fluences up to 1E12 proton/cm/sup 2/, are presented. The cells are mounted on a rocker during irradiation, to simulate hemispherical isotropic radiation. Data from ITO/InP cells are compared to those for commercially available GaAs and Si cells irradiated under the same conditions. At all proton energies, the ITO/InP cells showed a significantly lower percentage of degradation than the other types of cell. It is concluded that the two types of cell operate in a similar manner. From the data, the ITO/InP structure appears to present the same advantages with respect to radiation resistance as does the homojunction structure.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"59 1","pages":"898-902 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76482287","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105997
F. Hasoon, A. Al-Douri, A. Al-Foadi, M. Alias, A. Swartzlander, F. Abou-Elfotouh, A. Nelson, R. F. Fisher, R. Dhere, S. Asher, L. Kazmerski
A determination of the properties of two alloy semiconductors, (ZnSiAsd/sub 2/)/sub 1-x/(2GaAs)/sub x/ and (CuInSe/sub 2/)/sub 1-x/(2InAs)/sub x/, is presented for use in potential photovoltaic device applications. The methods of preparation and processing of single-crystals are reported. Compositional, structural, chemical, and electrooptical parameters are documented. Some emphasis is placed on the properties of the x=0.5 materials, which have bandgaps of 1.88 and 0.80 eV for (ZnSiAs/sub 2/)/sub 0.5/(2GaAs)/sub 0.5/ and (CuInSe/sub 2/)/sub 0.5/(2InAs)/sub 0.5/, respectively. Preliminary data on CdS/(ZnSiAs/sub 2/)/sub 0.5/(2GaAs)/sub 0.5/ cell structures are presented to demonstrate the device feasibility of this semiconductor.<>
{"title":"Evaluation and characterization of (ZnSiAs/sub 2/)/sub 1-x/(2GaAs)/sub x/ and (CuInSe/sub 2/)/sub 1-x/(2InAs)/sub x/ for photovoltaic device applications","authors":"F. Hasoon, A. Al-Douri, A. Al-Foadi, M. Alias, A. Swartzlander, F. Abou-Elfotouh, A. Nelson, R. F. Fisher, R. Dhere, S. Asher, L. Kazmerski","doi":"10.1109/PVSC.1988.105997","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105997","url":null,"abstract":"A determination of the properties of two alloy semiconductors, (ZnSiAsd/sub 2/)/sub 1-x/(2GaAs)/sub x/ and (CuInSe/sub 2/)/sub 1-x/(2InAs)/sub x/, is presented for use in potential photovoltaic device applications. The methods of preparation and processing of single-crystals are reported. Compositional, structural, chemical, and electrooptical parameters are documented. Some emphasis is placed on the properties of the x=0.5 materials, which have bandgaps of 1.88 and 0.80 eV for (ZnSiAs/sub 2/)/sub 0.5/(2GaAs)/sub 0.5/ and (CuInSe/sub 2/)/sub 0.5/(2InAs)/sub 0.5/, respectively. Preliminary data on CdS/(ZnSiAs/sub 2/)/sub 0.5/(2GaAs)/sub 0.5/ cell structures are presented to demonstrate the device feasibility of this semiconductor.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"126 1","pages":"1531-1536 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80040322","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105911
W.A. Emslie, C. Dollard
The development of a 10 kW photovoltaic pilot plant to demonstrate the performance of full-scale modules, determine the feasibility of a utility-scale array, determine the reliability and efficiency of different photovoltaic technologies, and determine what combination of cell type and tracking mode is best suited for the climate of northern Colorado is presented. The design and construction of four photovoltaic systems-two-axis concentrating, two-axis flat plate, one-axis flat plate, and one adjustable tilt flat plate-are also presented. Graphs showing array insolation and daily AC power output are given.<>
{"title":"Photovoltaic pilot plant","authors":"W.A. Emslie, C. Dollard","doi":"10.1109/PVSC.1988.105911","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105911","url":null,"abstract":"The development of a 10 kW photovoltaic pilot plant to demonstrate the performance of full-scale modules, determine the feasibility of a utility-scale array, determine the reliability and efficiency of different photovoltaic technologies, and determine what combination of cell type and tracking mode is best suited for the climate of northern Colorado is presented. The design and construction of four photovoltaic systems-two-axis concentrating, two-axis flat plate, one-axis flat plate, and one adjustable tilt flat plate-are also presented. Graphs showing array insolation and daily AC power output are given.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"8 1","pages":"1283-1288 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80293692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105650
Robert W. Francis, W. A. Somerville, CA El Segundo, Dennis J. Flood
Opportunities for US Air Force and NASA space solar photovoltaics are examined. It is noted that there is a growing interest in lightweight concentrator arrays with high levels of radiation resistance for orbital applications, and in a totally new generation of solar array technology for terrestrial-like applications in a nonterrestrial environment. Also considered is the advanced development of photovoltaic power systems for operation on the Lunar and/or Martian surface. This new scenario makes it possible for the terrestrial thin-film technologies to compete effectively with the high-efficiency solar cell technology that traditionally has been pursued in the space program. It is concluded that present and near-future US Air Force and NASA requirements show needs that, if the problems are looked upon as opportunities, can elevate the photovoltaic power source scientist and array structure engineer into the next technological photovoltaic growth curve.<>
{"title":"Issues and opportunities in space photovoltaics","authors":"Robert W. Francis, W. A. Somerville, CA El Segundo, Dennis J. Flood","doi":"10.1109/PVSC.1988.105650","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105650","url":null,"abstract":"Opportunities for US Air Force and NASA space solar photovoltaics are examined. It is noted that there is a growing interest in lightweight concentrator arrays with high levels of radiation resistance for orbital applications, and in a totally new generation of solar array technology for terrestrial-like applications in a nonterrestrial environment. Also considered is the advanced development of photovoltaic power systems for operation on the Lunar and/or Martian surface. This new scenario makes it possible for the terrestrial thin-film technologies to compete effectively with the high-efficiency solar cell technology that traditionally has been pursued in the space program. It is concluded that present and near-future US Air Force and NASA requirements show needs that, if the problems are looked upon as opportunities, can elevate the photovoltaic power source scientist and array structure engineer into the next technological photovoltaic growth curve.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"116 1","pages":"8-20 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85241375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105758
J. Zhao, A. Wang, A. Blakers, M. Green
Improvements in large area, bifacially contacted silicon concentrator solar cells are reported. By combining prismatic covers which steer incoming light away from top contacts with improved low-resistivity cell processing, efficiencies above 25% were achieved for 1.6 cm/sup 2/ cells for concentration levels up to 200 suns. Several hundred cells of this type have been supplied to Sandia National Laboratories for incorporation into the next generation of high-performance silicon concentrator modules, which are expected to reach a module efficiency of 20%.<>
{"title":"High efficiency prismatic cover silicon concentrator solar cells","authors":"J. Zhao, A. Wang, A. Blakers, M. Green","doi":"10.1109/PVSC.1988.105758","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105758","url":null,"abstract":"Improvements in large area, bifacially contacted silicon concentrator solar cells are reported. By combining prismatic covers which steer incoming light away from top contacts with improved low-resistivity cell processing, efficiencies above 25% were achieved for 1.6 cm/sup 2/ cells for concentration levels up to 200 suns. Several hundred cells of this type have been supplied to Sandia National Laboratories for incorporation into the next generation of high-performance silicon concentrator modules, which are expected to reach a module efficiency of 20%.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"52 1","pages":"529-531 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"80949169","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105829
M. Yamaguchi
Recent progress in the research and development of high-efficiency and superior-radiation-resistance InP solar cells is reviewed. High-efficiency cells with total-area efficiencies greater than 20% at AM 1.5 and 18% at AM0 have been successfully fabricated. It is demonstrated that InP cells have more radiation resistance than Si or GaAs solar cells. The superior radiation tolerance of InP cells is concluded to be due to the lower migration energies of radiation-defects in InP compared to those in GaAs. The results show that InP cells have great potential for space power applications.<>
{"title":"Present status and future prospects of InP solar cells","authors":"M. Yamaguchi","doi":"10.1109/PVSC.1988.105829","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105829","url":null,"abstract":"Recent progress in the research and development of high-efficiency and superior-radiation-resistance InP solar cells is reviewed. High-efficiency cells with total-area efficiencies greater than 20% at AM 1.5 and 18% at AM0 have been successfully fabricated. It is demonstrated that InP cells have more radiation resistance than Si or GaAs solar cells. The superior radiation tolerance of InP cells is concluded to be due to the lower migration energies of radiation-defects in InP compared to those in GaAs. The results show that InP cells have great potential for space power applications.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"26 1","pages":"880-885 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84073895","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105990
P. Sharps, A. Fahrenbruch, A. Lopez‐Otero, R. Bube
CdTe thin films grown by ion-assisted doping are investigated for use as the absorber layer in solar cells. In particular, the sharp reduction in carrier density with increased ion current which occurs after a maximum in the carrier density has been reached is examined. The ability to make carrier density profiles and to grade junctions is demonstrated. Preliminary results from films grown on graphite and alumina substrates are presented. Solar cells prepared using the epitaxial p-CdTe films as the collector material and n-CdS as the window are presented, and V/sub oc/, J/sub sc/, and fill factor are examined for different carrier densities and configurations in the p-CdTe. Carrier density levels in p-CdTe epitaxial films up to 2*10/sup 17/ cm/sup -3/ using ion-assisted doping with P as the dopant were achieved.<>
{"title":"Solar cells made from p-CdTe films grown with ion-assisted doping","authors":"P. Sharps, A. Fahrenbruch, A. Lopez‐Otero, R. Bube","doi":"10.1109/PVSC.1988.105990","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105990","url":null,"abstract":"CdTe thin films grown by ion-assisted doping are investigated for use as the absorber layer in solar cells. In particular, the sharp reduction in carrier density with increased ion current which occurs after a maximum in the carrier density has been reached is examined. The ability to make carrier density profiles and to grade junctions is demonstrated. Preliminary results from films grown on graphite and alumina substrates are presented. Solar cells prepared using the epitaxial p-CdTe films as the collector material and n-CdS as the window are presented, and V/sub oc/, J/sub sc/, and fill factor are examined for different carrier densities and configurations in the p-CdTe. Carrier density levels in p-CdTe epitaxial films up to 2*10/sup 17/ cm/sup -3/ using ion-assisted doping with P as the dopant were achieved.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"12 1","pages":"1641-1645 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"78105621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105718
R. Geyer, M. Gorn, N. Kniffler, P. Lechner, H. Rubel, B. Scheppat
The subband gap optical absorption spectra of amorphous hydrogenated silicon p-i-n solar cells were investigated by photocurrent spectroscopy in the CPM (constant photocurrent method) mode. A comparative study was made of thin (standard) and thick p-i-n junctions as well as junctions with slightly n- and p-doped active layers. Characteristic dependencies on the applied bias voltages (forward and reverse bias and short-circuit case) were observed. A critical discussion of these results in comparison to standard measurements (I-V curves under illumination, spectral response) is given. It is found that Urbach energies (slope of the exponential tail) are not voltage bias dependent and show, in the cases observed, the expected enhancement in p- nu -n and p- pi -n diodes with respect to p-i-n diodes.<>
采用恒光电流法研究了非晶氢化硅p-i-n太阳能电池的亚带隙光学吸收光谱。对薄的(标准的)和厚的p-i-n结以及少量n和p掺杂活性层的结进行了比较研究。特性依赖于施加的偏置电压(正向和反向偏置以及短路情况)被观察到。将这些结果与标准测量结果(照明下的I-V曲线，光谱响应)进行了比较。发现乌尔巴赫能量(指数尾的斜率)不依赖于电压偏置，并且在观察到的情况下显示，p- nu -n和p- pi -n二极管相对于p-i-n二极管的预期增强。
{"title":"CPM measurements on a-Si:H based pin cells-a critical investigation","authors":"R. Geyer, M. Gorn, N. Kniffler, P. Lechner, H. Rubel, B. Scheppat","doi":"10.1109/PVSC.1988.105718","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105718","url":null,"abstract":"The subband gap optical absorption spectra of amorphous hydrogenated silicon p-i-n solar cells were investigated by photocurrent spectroscopy in the CPM (constant photocurrent method) mode. A comparative study was made of thin (standard) and thick p-i-n junctions as well as junctions with slightly n- and p-doped active layers. Characteristic dependencies on the applied bias voltages (forward and reverse bias and short-circuit case) were observed. A critical discussion of these results in comparison to standard measurements (I-V curves under illumination, spectral response) is given. It is found that Urbach energies (slope of the exponential tail) are not voltage bias dependent and show, in the cases observed, the expected enhancement in p- nu -n and p- pi -n diodes with respect to p-i-n diodes.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"259 1","pages":"340-345 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"72905489","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105745
H. F. MacMillan, H. C. Hamaker, N. Kaminar, M. Kuryla, M. Ristow, D.D. Liu, G. Virshup, J. Gee
AlGaAs/GaAs heteroface solar concentrator cells which exhibit efficiencies in excess of 27% at high solar concentrations (>400 suns, AM1.5D, 100 mW/cm/sup 2/) have been fabricated with both n/p and p/n configurations. The best n/p cell achieved an efficiency of 28.1% around 400 suns, and the best p/n cell achieved an efficiency of 27.5% around 1000 suns. The high performance of these GaAs concentrator cells compared to earlier high-efficiency cells was due to improved control of the metal-organic chemical vapor deposition growth conditions and improved cell fabrication procedures (gridline definition and edge passivation). The design parameters of the solar cell structures and optimized grid pattern were determined with a realistic computer modeling program. An evaluation of the device characteristics and a discussion of future GaAs concentrator cell development are presented.<>
{"title":"28% efficient GaAs concentrator solar cells","authors":"H. F. MacMillan, H. C. Hamaker, N. Kaminar, M. Kuryla, M. Ristow, D.D. Liu, G. Virshup, J. Gee","doi":"10.1109/PVSC.1988.105745","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105745","url":null,"abstract":"AlGaAs/GaAs heteroface solar concentrator cells which exhibit efficiencies in excess of 27% at high solar concentrations (>400 suns, AM1.5D, 100 mW/cm/sup 2/) have been fabricated with both n/p and p/n configurations. The best n/p cell achieved an efficiency of 28.1% around 400 suns, and the best p/n cell achieved an efficiency of 27.5% around 1000 suns. The high performance of these GaAs concentrator cells compared to earlier high-efficiency cells was due to improved control of the metal-organic chemical vapor deposition growth conditions and improved cell fabrication procedures (gridline definition and edge passivation). The design parameters of the solar cell structures and optimized grid pattern were determined with a realistic computer modeling program. An evaluation of the device characteristics and a discussion of future GaAs concentrator cell development are presented.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"462-468 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"79854166","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105840
M. Spitzer, J. Dingle, R. Gale, P. Zavracky, M. Boden, D. H. Doyle
The development of GaAs/AlGaAs double-heterostructure concentrator solar cells for space operation that are capable of surviving 5 min thermal excursions to temperatures well beyond 500 degrees C without significant degradation is presented. The cells are formed epitaxially using the organometallic chemical vapor deposition growth process. The design utilizes a contact system that yields high stability at elevated temperature, and AM0 efficiency of up to 20% has been obtained with this approach. The efficiency is observed to change by less than 10% after a 5 min excursion to temperatures as high as 700 degrees C. Stability at higher temperatures and for longer times is discussed, and a comparison is made to the stability of conventional concentrator cells characterized by AM0 efficiencies of up to 23%.<>
{"title":"Gallium arsenide concentrator solar cells with highly stable metallization","authors":"M. Spitzer, J. Dingle, R. Gale, P. Zavracky, M. Boden, D. H. Doyle","doi":"10.1109/PVSC.1988.105840","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105840","url":null,"abstract":"The development of GaAs/AlGaAs double-heterostructure concentrator solar cells for space operation that are capable of surviving 5 min thermal excursions to temperatures well beyond 500 degrees C without significant degradation is presented. The cells are formed epitaxially using the organometallic chemical vapor deposition growth process. The design utilizes a contact system that yields high stability at elevated temperature, and AM0 efficiency of up to 20% has been obtained with this approach. The efficiency is observed to change by less than 10% after a 5 min excursion to temperatures as high as 700 degrees C. Stability at higher temperatures and for longer times is discussed, and a comparison is made to the stability of conventional concentrator cells characterized by AM0 efficiencies of up to 23%.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"14 1","pages":"930-933 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"82541611","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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