Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105979
H. Schweikardt, M. Lux‐Steiner, M. Vogt, E. Bucher
In/p-WSe/sub 2/ and n-ZnO/p-WSe/sub 2/ junctions are investigated by DLTS. In both kinds of diode a dominant trap concentration is observed at 460 meV for unintentionally doped WSe/sub 2/ crystals. Lower trap concentrations are found to be at 200 meV and 300 meV. The devices exhibit temperature-dependent capacities and capture rates. SIMS and laser mass spectrometry analyses reveal that these crystals are mainly contaminated by Mo, Cr, V, Fe, and Cu. DLTS measurements on WSe/sub 2/ crystals that were doped by these elements during the single-crystal growth of ion etching, indicate that the trap at 460 meV may not be due to the detected impurities Mo and Cu.<>
{"title":"DLTS analysis of WSe/sub 2/ solar cells","authors":"H. Schweikardt, M. Lux‐Steiner, M. Vogt, E. Bucher","doi":"10.1109/PVSC.1988.105979","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105979","url":null,"abstract":"In/p-WSe/sub 2/ and n-ZnO/p-WSe/sub 2/ junctions are investigated by DLTS. In both kinds of diode a dominant trap concentration is observed at 460 meV for unintentionally doped WSe/sub 2/ crystals. Lower trap concentrations are found to be at 200 meV and 300 meV. The devices exhibit temperature-dependent capacities and capture rates. SIMS and laser mass spectrometry analyses reveal that these crystals are mainly contaminated by Mo, Cr, V, Fe, and Cu. DLTS measurements on WSe/sub 2/ crystals that were doped by these elements during the single-crystal growth of ion etching, indicate that the trap at 460 meV may not be due to the detected impurities Mo and Cu.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"41 1","pages":"1594-1597 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"85345826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105705
A. Shah, E. Sauvain, N. Wyrsch, H. Curtins, B. Leutz, D. Shen, V. Chu, S. Wagner, H. Schade, H.W.A. Chao
The very-high-frequency glow discharge (VHF-GD) is a high-rate deposition method for amorphous silicon based on the use of plasma excitation frequencies in the range 30-150 MHz. Thereby the high-energy tail of the electron energy density function is enhanced, increasing the deposition rate R, without a corresponding increase in electric field and ion bombardment. An extensive set of optoelectronic properties ( sigma /sub dark/, E/sub a/, sigma p/sub h/, CPM, PDS, TOF, SSPG, steady-state Hecht plot) is presented for samples prepared by VHF-GD for the above frequency range and R approximately=12-15 AA/s. Emphasized are hole transport properties. With values of ( mu /sup D/ tau /sup t/)/sub h/ by TOF (time of flight) around 3*10/sup -10/ but up to approximately=5*10/sup -9/ cm/sup 2//V, VHF-GD is judged to be adequate for solar-cell applications.<>
{"title":"a-Si:H films deposited at high rates in a 'VHF' silane plasma: potential for low-cost solar cells","authors":"A. Shah, E. Sauvain, N. Wyrsch, H. Curtins, B. Leutz, D. Shen, V. Chu, S. Wagner, H. Schade, H.W.A. Chao","doi":"10.1109/PVSC.1988.105705","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105705","url":null,"abstract":"The very-high-frequency glow discharge (VHF-GD) is a high-rate deposition method for amorphous silicon based on the use of plasma excitation frequencies in the range 30-150 MHz. Thereby the high-energy tail of the electron energy density function is enhanced, increasing the deposition rate R, without a corresponding increase in electric field and ion bombardment. An extensive set of optoelectronic properties ( sigma /sub dark/, E/sub a/, sigma p/sub h/, CPM, PDS, TOF, SSPG, steady-state Hecht plot) is presented for samples prepared by VHF-GD for the above frequency range and R approximately=12-15 AA/s. Emphasized are hole transport properties. With values of ( mu /sup D/ tau /sup t/)/sub h/ by TOF (time of flight) around 3*10/sup -10/ but up to approximately=5*10/sup -9/ cm/sup 2//V, VHF-GD is judged to be adequate for solar-cell applications.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"68 1","pages":"282-287 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"90766845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105649
D. Carlson
It is suggested that the timing and magnitude of an explosive growth period in photovoltaics will be strongly influenced by factors related to the use of fossil fuels. Depletion of fossil fuels in some parts of the world is likely to cause significant changes in the energy policies of various governments and to result in higher energy costs to the consumer. Perhaps even more significant is the fact that the growing consumption of fossil fuels is contaminating the global environment at an increasing rate, and this contamination may lead to drastic changes in climate. It is emphasized that photovoltaics represents one of the few clean energy options for a pollution-free future.<>
{"title":"Fossil fuels, the greenhouse effect and photovoltaics","authors":"D. Carlson","doi":"10.1109/PVSC.1988.105649","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105649","url":null,"abstract":"It is suggested that the timing and magnitude of an explosive growth period in photovoltaics will be strongly influenced by factors related to the use of fossil fuels. Depletion of fossil fuels in some parts of the world is likely to cause significant changes in the energy policies of various governments and to result in higher energy costs to the consumer. Perhaps even more significant is the fact that the growing consumption of fossil fuels is contaminating the global environment at an increasing rate, and this contamination may lead to drastic changes in climate. It is emphasized that photovoltaics represents one of the few clean energy options for a pollution-free future.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"11 1","pages":"1-7 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"89581919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105724
L. Mrig, W. Berry
The authors present an analysis of field-test data for first-/generation a-Si modules under the Solar Energy Research Institute's ongoing field test and performance evaluation program. The program goal is to establish baseline data against which future development can be compared. To that end, models are discussed which represent the data and which begin to correlate basic cell and material studies to module field performance. Two sets of first-generation modules have been placed in the field test. The test configuration for most of the modules is maximum power. Short-circuit and open-circuit configurations are also used. The modules show rapid initial degradation during the first year of field testing. Typical efficiency loss for the test period is over 30%. The data for efficiency degradation are modeled by exponential fit, and the deviance from ideal is discussed. Fill factor data are compared to the model of Z.E. Smith et al. (1985), and in most cases they show a log (t) dependence. Both models are used to predict 30-year performance.<>
{"title":"Useful life prediction for first generation a-Si photovoltaic modules using outdoor test data","authors":"L. Mrig, W. Berry","doi":"10.1109/PVSC.1988.105724","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105724","url":null,"abstract":"The authors present an analysis of field-test data for first-/generation a-Si modules under the Solar Energy Research Institute's ongoing field test and performance evaluation program. The program goal is to establish baseline data against which future development can be compared. To that end, models are discussed which represent the data and which begin to correlate basic cell and material studies to module field performance. Two sets of first-generation modules have been placed in the field test. The test configuration for most of the modules is maximum power. Short-circuit and open-circuit configurations are also used. The modules show rapid initial degradation during the first year of field testing. Typical efficiency loss for the test period is over 30%. The data for efficiency degradation are modeled by exponential fit, and the deviance from ideal is discussed. Fill factor data are compared to the model of Z.E. Smith et al. (1985), and in most cases they show a log (t) dependence. Both models are used to predict 30-year performance.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"1 1","pages":"370-374 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"76234006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105850
G. La Roche
The processability of GaAs solar cells using processes established for space-grade silicon solar cells was tested on a 140-piece sample. The welding parameters were adapted to the requirements of GaAs solar cells by a reduction of the welding time at increased voltage and improved electrode shape. The resulting degradation of the electrical characteristics after welding is comparable to those observed for Si solar cells. The yield of the production sample up to coupon level is comparable to that of Si solar cells. On a coupon consisting of 24 (2*4 cm) cells mounted on a carbon fiber composite substrate, high-resistance capability against deep thermal cycling between +80 degrees C and -170 degrees C was demonstrated.<>
{"title":"Processing of GaAs solar cells","authors":"G. La Roche","doi":"10.1109/PVSC.1988.105850","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105850","url":null,"abstract":"The processability of GaAs solar cells using processes established for space-grade silicon solar cells was tested on a 140-piece sample. The welding parameters were adapted to the requirements of GaAs solar cells by a reduction of the welding time at increased voltage and improved electrode shape. The resulting degradation of the electrical characteristics after welding is comparable to those observed for Si solar cells. The yield of the production sample up to coupon level is comparable to that of Si solar cells. On a coupon consisting of 24 (2*4 cm) cells mounted on a carbon fiber composite substrate, high-resistance capability against deep thermal cycling between +80 degrees C and -170 degrees C was demonstrated.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"7 1","pages":"974-978 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74738841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105864
E. Kern, M. Russell
Transient irradiance modeling techniques were developed, and experimental observations which resulted from cloud passages over thirty 2000 W grid-connected residential photovoltaic systems spread over a 50-acre neighborhood are reported. The site is described, and a variety of effects that influence the fluctuations of irradiance at a given point under cloud-passage conditions are discussed. Observations have quantified the degree to which the rates of PV system generation change are higher for a single system than for the aggregate site. These techniques could be applied to larger array fields to study the impact of their transient generation effects on electrical power system operations.<>
{"title":"Spatial and temporal irradiance variations over large array fields","authors":"E. Kern, M. Russell","doi":"10.1109/PVSC.1988.105864","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105864","url":null,"abstract":"Transient irradiance modeling techniques were developed, and experimental observations which resulted from cloud passages over thirty 2000 W grid-connected residential photovoltaic systems spread over a 50-acre neighborhood are reported. The site is described, and a variety of effects that influence the fluctuations of irradiance at a given point under cloud-passage conditions are discussed. Observations have quantified the degree to which the rates of PV system generation change are higher for a single system than for the aggregate site. These techniques could be applied to larger array fields to study the impact of their transient generation effects on electrical power system operations.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"32 1","pages":"1043-1050 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74591276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105779
V. G. Weizer, N. Fatemi
Gold and gold-based alloys, commonly used as solar cell contact materials, are known to react readily with gallium arsenide. Experiments were performed to identify the mechanisms involved in these GaAs-metal interactions. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are explained by invoking this mechanism.<>
{"title":"Contact formation in gallium arsenide solar cells","authors":"V. G. Weizer, N. Fatemi","doi":"10.1109/PVSC.1988.105779","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105779","url":null,"abstract":"Gold and gold-based alloys, commonly used as solar cell contact materials, are known to react readily with gallium arsenide. Experiments were performed to identify the mechanisms involved in these GaAs-metal interactions. It is shown that the reaction of GaAs with gold takes place via a dissociative diffusion process. It is shown further that the GaAs-metal reaction rate is controlled to a very great extent by the condition of the free surface of the contact metal, an interesting example of which is the previously unexplained increase in the reaction rate that has been observed for samples annealed in a vacuum environment as compared to those annealed in a gaseous ambient. A number of other hard-to-explain observations, such as the low-temperature formation of voids in the gold lattice and crystallite growth on the gold surface, are explained by invoking this mechanism.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"71 1","pages":"629-634 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74631303","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105652
T. Ciszek
The author examines the factors that influence the material quality and throughput of silicon produced by various methods. Particular emphasis is placed on the minority-charge carrier lifetime tau as an indicator of material quality. Purity, rate of growth, cooling rate, microdefect, and macrodefect effects on tau are enumerated. The concept of the tau .T (where T is throughput) product as a measure of process viability is qualitatively introduced. Most of the PV (photovoltaic) silicon work in the last decade has focused on trying to improve the quality ( tau ) of perceived low-cost (high-T) material generation processes. Another avenue for increasing tau .T is to relax intrinsically high- tau processes to improve T. The approaches under development for PV silicon in the US are reviewed with respect to quality and throughput characteristics supplied by their practitioners. They span the entire range of quality/throughput combinations, and a number of them show potential for silicon/based PV power generation systems.<>
{"title":"Silicon material quality and throughput: the high and the low, the fast and the slow","authors":"T. Ciszek","doi":"10.1109/PVSC.1988.105652","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105652","url":null,"abstract":"The author examines the factors that influence the material quality and throughput of silicon produced by various methods. Particular emphasis is placed on the minority-charge carrier lifetime tau as an indicator of material quality. Purity, rate of growth, cooling rate, microdefect, and macrodefect effects on tau are enumerated. The concept of the tau .T (where T is throughput) product as a measure of process viability is qualitatively introduced. Most of the PV (photovoltaic) silicon work in the last decade has focused on trying to improve the quality ( tau ) of perceived low-cost (high-T) material generation processes. Another avenue for increasing tau .T is to relax intrinsically high- tau processes to improve T. The approaches under development for PV silicon in the US are reviewed with respect to quality and throughput characteristics supplied by their practitioners. They span the entire range of quality/throughput combinations, and a number of them show potential for silicon/based PV power generation systems.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"40 1","pages":"31-38 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74631817","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105677
F. Karg, K. Dietrich, W. Kusian, H. Kausche
Amorphous p-SiC/Si heterojunctions with carbon or phosphorus buffer layers were investigated by spectral response and delayed field measurements. Both buffer types enhance the carrier lifetime at the interface and the blue response. The compensate for the negative influence of cross-contaminated boron, the primary origin of low blue response. A model of a buffer layer conceived to operate efficiently demonstrated the correlation between the length of the carbon buffer layer and the boron cross contamination. In addition the interface lifetime depends on the deposition sequence. Deposition of undoped SiC onto a-Si:H is associated with shallow electron traps, while the reverse sequence shows a very low interface state density.<>
{"title":"Investigation of variously composed p/i junctions in amorphous silicon solar cells by time of flight and spectral response measurements","authors":"F. Karg, K. Dietrich, W. Kusian, H. Kausche","doi":"10.1109/PVSC.1988.105677","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105677","url":null,"abstract":"Amorphous p-SiC/Si heterojunctions with carbon or phosphorus buffer layers were investigated by spectral response and delayed field measurements. Both buffer types enhance the carrier lifetime at the interface and the blue response. The compensate for the negative influence of cross-contaminated boron, the primary origin of low blue response. A model of a buffer layer conceived to operate efficiently demonstrated the correlation between the length of the carbon buffer layer and the boron cross contamination. In addition the interface lifetime depends on the deposition sequence. Deposition of undoped SiC onto a-Si:H is associated with shallow electron traps, while the reverse sequence shows a very low interface state density.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"30 1","pages":"149-153 vol.1"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"74080513","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1988-01-01DOI: 10.1109/PVSC.1988.105910
T. Kobayashi, K. Chinen, M. Takenouchi, K. Fujioka, S. Ito, Y. Nakashima, S. Yoshikawa, H. Sugimoto
An outline of PV systems developed by the New Energy Development Organization (NEDO) is presented. Support technologies for PV generation were investigated. The implementation of these systems reveals important information about system interconnection and control technology such as reverse power flow protection, instantaneous switching, suppression of voltage fluctuation, and harmonic distortion. The development of components such as solar cell arrays, inverters, batteries, and so on is discussed.<>
{"title":"NEDO's activities on research, development and demonstration for photovoltaic systems","authors":"T. Kobayashi, K. Chinen, M. Takenouchi, K. Fujioka, S. Ito, Y. Nakashima, S. Yoshikawa, H. Sugimoto","doi":"10.1109/PVSC.1988.105910","DOIUrl":"https://doi.org/10.1109/PVSC.1988.105910","url":null,"abstract":"An outline of PV systems developed by the New Energy Development Organization (NEDO) is presented. Support technologies for PV generation were investigated. The implementation of these systems reveals important information about system interconnection and control technology such as reverse power flow protection, instantaneous switching, suppression of voltage fluctuation, and harmonic distortion. The development of components such as solar cell arrays, inverters, batteries, and so on is discussed.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"9 1","pages":"1278-1282 vol.2"},"PeriodicalIF":0.0,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"84612699","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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