Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698911
C. Conneely, B. O'Connell, P. Hurley, W. Lane, L. Adams
Previous work at this centre has shown enhanced sensitivity for PMOS dosimeters using a design approach. This is being extended presently to longer chains of devices. Prior to this extension, thermal effects have been investigated and a noise analysis has been undertaken. The need for a temperature compensation technique becomes imperative if the signal/noise ratio is to be improved.
{"title":"Strategies for millirad sensitivity in PMOS dosimeters","authors":"C. Conneely, B. O'Connell, P. Hurley, W. Lane, L. Adams","doi":"10.1109/RADECS.1997.698911","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698911","url":null,"abstract":"Previous work at this centre has shown enhanced sensitivity for PMOS dosimeters using a design approach. This is being extended presently to longer chains of devices. Prior to this extension, thermal effects have been investigated and a noise analysis has been undertaken. The need for a temperature compensation technique becomes imperative if the signal/noise ratio is to be improved.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133489585","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698850
A. Scarpa, A. Paccagnella, F. Montera, A. Candelori, G. Ghibaudo, G. Pananakakis, G. Ghidini, P. Fuochi
In this work we have investigated how gamma irradiation affects the tunneling conduction mechanism of a 20 nm thick oxide in MOS capacitors. The radiation induced positive charge is rapidly compensated by the injected electrons, and does not impact the gate current under positive injection after the first current-voltage measurement. Only a transient stress induced leakage current at low gate bias is observed. Instead, a radiation induced negative charge has been observed near the polysilicon gate, which enhances the gate voltage needed for Fowler-Nordheim conduction at negative gate bias. No time decay of this charge has been observed. Such charges slightly modify the trapping kinetics of negative charge during subsequent electrical stresses performed at constant current condition.
{"title":"Modifications of Fowler-Nordheim injection characteristics in /spl gamma/ irradiated MOS devices","authors":"A. Scarpa, A. Paccagnella, F. Montera, A. Candelori, G. Ghibaudo, G. Pananakakis, G. Ghidini, P. Fuochi","doi":"10.1109/RADECS.1997.698850","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698850","url":null,"abstract":"In this work we have investigated how gamma irradiation affects the tunneling conduction mechanism of a 20 nm thick oxide in MOS capacitors. The radiation induced positive charge is rapidly compensated by the injected electrons, and does not impact the gate current under positive injection after the first current-voltage measurement. Only a transient stress induced leakage current at low gate bias is observed. Instead, a radiation induced negative charge has been observed near the polysilicon gate, which enhances the gate voltage needed for Fowler-Nordheim conduction at negative gate bias. No time decay of this charge has been observed. Such charges slightly modify the trapping kinetics of negative charge during subsequent electrical stresses performed at constant current condition.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116151603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698873
D. V. Gromov, P.P. Maltcev, A. Nikiforov, S.A. Polevich, S.A. Startcev
The radiation hard microwave integrated circuits (MIC) design technique is presented. The approach is based on the microstrip lines optimization procedure taking into consideration MESFET S-parameters radiation variation. The technique efficiency is demonstrated for MIC amplifier.
{"title":"Radiation hard GaAs microwave integrated circuits design","authors":"D. V. Gromov, P.P. Maltcev, A. Nikiforov, S.A. Polevich, S.A. Startcev","doi":"10.1109/RADECS.1997.698873","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698873","url":null,"abstract":"The radiation hard microwave integrated circuits (MIC) design technique is presented. The approach is based on the microstrip lines optimization procedure taking into consideration MESFET S-parameters radiation variation. The technique efficiency is demonstrated for MIC amplifier.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"73 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122139670","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698982
G. Mackay, I. Thomson, I. Adams, R. Nickson, A. Ng, N. Sultan
A small, low power instrument has been developed to monitor proton-induced upsets in space-borne electronics. This instrument will act as a monitor for spacecraft in orbits where single event upsets (SEUs) and other single event effects (SEEs) are considered a significant hazard to on-board electronics. A Flight Model has been designed and built which interfaces with the satellite on-board computer. The instrument has been characterized over the proton energy range 20 MeV to 500 MeV and has no energy dependence. The proton SEU cross section of 2.4/spl times//sup -11/ cm/sup 2//bit is orders of magnitude more sensitive to protons than current flight electronics components. The first instrument will be flown on the STRV 1c satellite in a Geosynchronous Transfer Orbit.
{"title":"An instrument for monitoring proton-induced upsets in space electronics","authors":"G. Mackay, I. Thomson, I. Adams, R. Nickson, A. Ng, N. Sultan","doi":"10.1109/RADECS.1997.698982","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698982","url":null,"abstract":"A small, low power instrument has been developed to monitor proton-induced upsets in space-borne electronics. This instrument will act as a monitor for spacecraft in orbits where single event upsets (SEUs) and other single event effects (SEEs) are considered a significant hazard to on-board electronics. A Flight Model has been designed and built which interfaces with the satellite on-board computer. The instrument has been characterized over the proton energy range 20 MeV to 500 MeV and has no energy dependence. The proton SEU cross section of 2.4/spl times//sup -11/ cm/sup 2//bit is orders of magnitude more sensitive to protons than current flight electronics components. The first instrument will be flown on the STRV 1c satellite in a Geosynchronous Transfer Orbit.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121791973","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698885
J. Brasile, N. Samama
This paper presents new behavioral models of electronic components which are stressed by power pulses. The thermal destruction of bipolar transistors as well as disturbance models for both bipolar and MOS gates are discussed. A study of trends in integrated circuit technology is used to extract the parameters required for the models (such as lithography or doping concentration). These basic models appear to fit published experimental results satisfactorily and they prove to be precise enough to estimate the power needed to disturb or destroy the components under consideration. Finally, predictions up to the year 2000 are given. These illustrate how susceptibility levels of some electronic transistors have evolved and should continue to evolve.
{"title":"\"Electronic components breakdown and disturbance models\"","authors":"J. Brasile, N. Samama","doi":"10.1109/RADECS.1997.698885","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698885","url":null,"abstract":"This paper presents new behavioral models of electronic components which are stressed by power pulses. The thermal destruction of bipolar transistors as well as disturbance models for both bipolar and MOS gates are discussed. A study of trends in integrated circuit technology is used to extract the parameters required for the models (such as lithography or doping concentration). These basic models appear to fit published experimental results satisfactorily and they prove to be precise enough to estimate the power needed to disturb or destroy the components under consideration. Finally, predictions up to the year 2000 are given. These illustrate how susceptibility levels of some electronic transistors have evolved and should continue to evolve.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125133497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698994
C. Detcheverry, R. Ecoffet, S. Duzellier, E. Lorfèvre, G. Bruguier, J. Barak, Y. Lifshitz, J. Palau, J. Gasiot
This work determines experimentally and by simulation the SEU sensitive depth in a 0.6 /spl mu/m SRAM technology. A good correlation is obtained between the two studies in the case of heavy ions deposing energy close to the critical energy. Other simulation results complete the first investigation by studying the minimum sensitive depth for ions deposing higher energies (at greater LET).
{"title":"SEU sensitive depth in a submicron SRAM technology","authors":"C. Detcheverry, R. Ecoffet, S. Duzellier, E. Lorfèvre, G. Bruguier, J. Barak, Y. Lifshitz, J. Palau, J. Gasiot","doi":"10.1109/RADECS.1997.698994","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698994","url":null,"abstract":"This work determines experimentally and by simulation the SEU sensitive depth in a 0.6 /spl mu/m SRAM technology. A good correlation is obtained between the two studies in the case of heavy ions deposing energy close to the critical energy. Other simulation results complete the first investigation by studying the minimum sensitive depth for ions deposing higher energies (at greater LET).","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125481355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698892
V. Berland, P. Galy
Within the framework of the collaboration between CERN and the TUM (Technical University of Munich), irradiation experiments have been carried out at liquid helium temperatures on epitaxial diodes for the superconducting magnet protection of the future Large Hadron Collider (LHC). Two sets of 10 mm diameter diode samples were submitted to an irradiation of 30 kGy dose and 6*10/sup 14/ n/cm/sup 2/ neutron fluence at liquid helium temperature. The radiation-induced degradation has been measured by the increase in the forward voltage. Afterwards, one set of diode samples was stepwise warmed up to about 250 K and, at each step, the recovery in forward voltage was monitored to determine the minimum annealing temperature. The second set of diode samples was thermally annealed with different time intervals at about 100 K and 200 K to determine the minimum annealing time.
{"title":"Annealing of silicon epitaxial power diodes after irradiation at liquid He temperature","authors":"V. Berland, P. Galy","doi":"10.1109/RADECS.1997.698892","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698892","url":null,"abstract":"Within the framework of the collaboration between CERN and the TUM (Technical University of Munich), irradiation experiments have been carried out at liquid helium temperatures on epitaxial diodes for the superconducting magnet protection of the future Large Hadron Collider (LHC). Two sets of 10 mm diameter diode samples were submitted to an irradiation of 30 kGy dose and 6*10/sup 14/ n/cm/sup 2/ neutron fluence at liquid helium temperature. The radiation-induced degradation has been measured by the increase in the forward voltage. Afterwards, one set of diode samples was stepwise warmed up to about 250 K and, at each step, the recovery in forward voltage was monitored to determine the minimum annealing temperature. The second set of diode samples was thermally annealed with different time intervals at about 100 K and 200 K to determine the minimum annealing time.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"68 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125519252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698846
V. Pershenkov, S. Cherepko, V. Belyakov, V. Abramov, V. I. Rusanovsky, A. Sogoyan, V. Rogov, V. N. Ulimov, V. Emelianov, V. S. Nasibullin
Experimental techniques for bipolar low dose-rate effect investigation and simulation are presented. The techniques utilize the bulk and peripheral recombination current separation and infrared illumination during high dose-rate laboratory test.
{"title":"The simulation of the low dose-rate radiation effect in bipolar devices","authors":"V. Pershenkov, S. Cherepko, V. Belyakov, V. Abramov, V. I. Rusanovsky, A. Sogoyan, V. Rogov, V. N. Ulimov, V. Emelianov, V. S. Nasibullin","doi":"10.1109/RADECS.1997.698846","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698846","url":null,"abstract":"Experimental techniques for bipolar low dose-rate effect investigation and simulation are presented. The techniques utilize the bulk and peripheral recombination current separation and infrared illumination during high dose-rate laboratory test.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130336055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698966
H. Klose, J. Rauchfuss, M. Sprenger, D. Fink, K. Maier, M. Muller, J. Baehr, R. Nahnhauer, F. Niedermeyer
Scintillating organic fibres were irradiated in a short region (1 cm length) with 70 MeV protons or 2.0 MeV electrons under time-compressed conditions. The damage process of scintillating properties was studied in-situ during the irradiation using two spectrometers. It was found that the dyes recover partially during the irradiation and nearly complete within a few days. The in-situ observed data are quite different from long-term radiation effects.
{"title":"Proton and electron induced damage processes in organic scintillating fibres","authors":"H. Klose, J. Rauchfuss, M. Sprenger, D. Fink, K. Maier, M. Muller, J. Baehr, R. Nahnhauer, F. Niedermeyer","doi":"10.1109/RADECS.1997.698966","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698966","url":null,"abstract":"Scintillating organic fibres were irradiated in a short region (1 cm length) with 70 MeV protons or 2.0 MeV electrons under time-compressed conditions. The damage process of scintillating properties was studied in-situ during the irradiation using two spectrometers. It was found that the dyes recover partially during the irradiation and nearly complete within a few days. The in-situ observed data are quite different from long-term radiation effects.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128071038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698843
V. Emelianov, A. Sogoyan, S.V. Cherepko, O.V. Meshurov, V.N. Ulimov, A. Chumakov, V. Rogov, A. Nikiforov
Latent interface trap buildup, latent positive charge annealing, and molecular hydrogen annealing response of irradiated MOSFET were studied. The mechanisms of latent process and latent processes implications for hardness assurance are discussed.
{"title":"Thermal and field dependencies of latent relaxation processes in irradiated MOS devices","authors":"V. Emelianov, A. Sogoyan, S.V. Cherepko, O.V. Meshurov, V.N. Ulimov, A. Chumakov, V. Rogov, A. Nikiforov","doi":"10.1109/RADECS.1997.698843","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698843","url":null,"abstract":"Latent interface trap buildup, latent positive charge annealing, and molecular hydrogen annealing response of irradiated MOSFET were studied. The mechanisms of latent process and latent processes implications for hardness assurance are discussed.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121146770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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