Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698919
P. Layton, D. Czajkowski, J. Marshall, H. Anthony, R. Boss
This paper will report the test results from the development of the single event latchup protection circuitry (referred to as Space Electronics Inc.'s (SEIs) Latchup Protection Technology (LPT/sup TM/)) for several integrated circuits which are known to latchup at unacceptably low LET energies for space applications. Two devices were evaluated with LPT/sup TM/; the ADS7805 16 bit analog to digital converter and the GF10009 FPGA (Gatefield's 9000 gate flash programmable gate array).
{"title":"Single event latchup protection of integrated circuits","authors":"P. Layton, D. Czajkowski, J. Marshall, H. Anthony, R. Boss","doi":"10.1109/RADECS.1997.698919","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698919","url":null,"abstract":"This paper will report the test results from the development of the single event latchup protection circuitry (referred to as Space Electronics Inc.'s (SEIs) Latchup Protection Technology (LPT/sup TM/)) for several integrated circuits which are known to latchup at unacceptably low LET energies for space applications. Two devices were evaluated with LPT/sup TM/; the ADS7805 16 bit analog to digital converter and the GF10009 FPGA (Gatefield's 9000 gate flash programmable gate array).","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127538043","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.699000
E. Lorfèvre, C. Sudre, C. Dachs, C. Detcheverry, J. Palau, J. Gasiot, M. Calvet, J. Garnier, R. Ecoffet
Heavy ion induced burnout is reported, for the first time, in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurrence.
{"title":"SEB occurrence in a VIP: influence of the epi-substrate junction","authors":"E. Lorfèvre, C. Sudre, C. Dachs, C. Detcheverry, J. Palau, J. Gasiot, M. Calvet, J. Garnier, R. Ecoffet","doi":"10.1109/RADECS.1997.699000","DOIUrl":"https://doi.org/10.1109/RADECS.1997.699000","url":null,"abstract":"Heavy ion induced burnout is reported, for the first time, in different parts of a VIP. A 2D-simulation investigation allows a better understanding of this phenomenon and shows the importance of the epi-substrate junction parameters in the SEB occurrence.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129026830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698985
S. Duzellier, D. Falguère, R. Ecoffet, I. Tsourilo
SEE Spaceflight measurements are presented on various SRAM and DRAM in the MIR station orbit. The results permitted the error mapping and the localisation of hazardous regions.
介绍了和平号空间站轨道上各种SRAM和DRAM的航天测量。结果允许错误映射和危险区域的局部化。
{"title":"EXEQ II and III: On-board experiments for the study of single events","authors":"S. Duzellier, D. Falguère, R. Ecoffet, I. Tsourilo","doi":"10.1109/RADECS.1997.698985","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698985","url":null,"abstract":"SEE Spaceflight measurements are presented on various SRAM and DRAM in the MIR station orbit. The results permitted the error mapping and the localisation of hazardous regions.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129160259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698868
Y. Deval, P. Fouillat, X. Montagner, R. Briand, A. Touboul, J. David, L. Bonora, M. Calvet, P. Calvel
This paper presents a design approach in order to deal with total-dose induced degradation with commercial IC processes. Devices behavior limitations are presented, and layout-based techniques are proposed to reduce bipolar transistors radiation sensitivity. The global design procedure combines these layout hardened devices with rad-dedicated design techniques. In addition, a gated lateral PNP has been designed to evaluate the ionizing radiation effects on its electrical characteristics. Its voltage controlled current gain remains sufficiently large once irradiated to expect an effective hardening of the analog function. To illustrate this approach, a commercial BiCMOS integrated circuit has been fabricated in an Austria Mikro Systeme process. The test vehicle revealed a good radiation hardness level.
{"title":"Implementation of total dose constraints at the design level of full custom bipolar integrated circuits","authors":"Y. Deval, P. Fouillat, X. Montagner, R. Briand, A. Touboul, J. David, L. Bonora, M. Calvet, P. Calvel","doi":"10.1109/RADECS.1997.698868","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698868","url":null,"abstract":"This paper presents a design approach in order to deal with total-dose induced degradation with commercial IC processes. Devices behavior limitations are presented, and layout-based techniques are proposed to reduce bipolar transistors radiation sensitivity. The global design procedure combines these layout hardened devices with rad-dedicated design techniques. In addition, a gated lateral PNP has been designed to evaluate the ionizing radiation effects on its electrical characteristics. Its voltage controlled current gain remains sufficiently large once irradiated to expect an effective hardening of the analog function. To illustrate this approach, a commercial BiCMOS integrated circuit has been fabricated in an Austria Mikro Systeme process. The test vehicle revealed a good radiation hardness level.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130697517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698954
C. D'hose, Eric Cassan, J. Baggie, O. Musseau, J. Leray
Radiation hardness of LiNbO/sub 3/:Ti Mach-Zehnder optomodulators under high energy electron pulses at high dose rate is studied for the first time. Both electrical and optical measurements are performed at various dose rates and electrical bias conditions. Electrical and optical perturbations are observed to be synchronous of the irradiation pulse, below a total dose threshold of 1 krad(Si). The optical behavior of the various optomodulators under test is related to their structure. As a matter of fact, optical perturbations are due either to photocurrent which superposes to electrical bias, or to an alteration of couplers characteristics.
{"title":"Electrical and optical response of a Mach-Zehnder electrooptical modulator to pulsed irradiation","authors":"C. D'hose, Eric Cassan, J. Baggie, O. Musseau, J. Leray","doi":"10.1109/RADECS.1997.698954","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698954","url":null,"abstract":"Radiation hardness of LiNbO/sub 3/:Ti Mach-Zehnder optomodulators under high energy electron pulses at high dose rate is studied for the first time. Both electrical and optical measurements are performed at various dose rates and electrical bias conditions. Electrical and optical perturbations are observed to be synchronous of the irradiation pulse, below a total dose threshold of 1 krad(Si). The optical behavior of the various optomodulators under test is related to their structure. As a matter of fact, optical perturbations are due either to photocurrent which superposes to electrical bias, or to an alteration of couplers characteristics.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126600984","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698953
A. Chugg, G. Hopkinson
The energy depositions reported by Monte Carlo electron-photon radiation transport codes are subject to a random error due to the finite number of particle histories used to generate the results. These statistical variations, normally a nuisance, may also be identified with the real radiation noise effects experienced by CCD pixels in persistent radiation environments. This paper explores the practicability of such radiation noise modelling by applying the ACCEPT code from the ITS suite to the case of a shielded CCD exposed to an electron flux. The results are compared with those obtained in a subsequent electron irradiation of the CCD by a Van de Graaff accelerator.
{"title":"A new approach to modelling radiation noise in CCD's","authors":"A. Chugg, G. Hopkinson","doi":"10.1109/RADECS.1997.698953","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698953","url":null,"abstract":"The energy depositions reported by Monte Carlo electron-photon radiation transport codes are subject to a random error due to the finite number of particle histories used to generate the results. These statistical variations, normally a nuisance, may also be identified with the real radiation noise effects experienced by CCD pixels in persistent radiation environments. This paper explores the practicability of such radiation noise modelling by applying the ACCEPT code from the ITS suite to the case of a shielded CCD exposed to an electron flux. The results are compared with those obtained in a subsequent electron irradiation of the CCD by a Van de Graaff accelerator.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116121717","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.699001
B. Doucin, C. Poivey, C. Carlotti, A. Salminen, K. Ojasalo, R. Ahonen, P. Poirot, L. Baudry, R. Harboe Sorensen
Total Dose, heavy ion and proton irradiation were performed on 6 types of commercial memories (two 1 Mbit SRAMs, two 16 Mbit DRAMs, two 8 Mbit Flash memories), in order to evidence the effect of power supply on the results.
{"title":"Study of radiation effects on low voltage memories","authors":"B. Doucin, C. Poivey, C. Carlotti, A. Salminen, K. Ojasalo, R. Ahonen, P. Poirot, L. Baudry, R. Harboe Sorensen","doi":"10.1109/RADECS.1997.699001","DOIUrl":"https://doi.org/10.1109/RADECS.1997.699001","url":null,"abstract":"Total Dose, heavy ion and proton irradiation were performed on 6 types of commercial memories (two 1 Mbit SRAMs, two 16 Mbit DRAMs, two 8 Mbit Flash memories), in order to evidence the effect of power supply on the results.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"193 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116146337","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698917
J. Keurinck
This paper illustrates through the example of a hardened absolute digital converter, one way to meet the accuracy and hardening requirements of the nuclear robotics field. The method consists in performing iterations until a trade-off is found between architecture choices and devices choices, in order to achieve a given hardening level. The system is found to be still functional after 150 kGy. Such a method can be applied to other equipments used in nuclear robotics.
{"title":"Absolute digital converter system for nuclear robotics","authors":"J. Keurinck","doi":"10.1109/RADECS.1997.698917","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698917","url":null,"abstract":"This paper illustrates through the example of a hardened absolute digital converter, one way to meet the accuracy and hardening requirements of the nuclear robotics field. The method consists in performing iterations until a trade-off is found between architecture choices and devices choices, in order to achieve a given hardening level. The system is found to be still functional after 150 kGy. Such a method can be applied to other equipments used in nuclear robotics.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121221128","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698992
A. Campbell, O. Musseau, V. Ferlet-Cavrois, W. Stapor, P. McDonald
Investigation of single event effects at grazing angle by both charge collection and multiple bit upset measurements evidences modified collection mechanisms with charge transfer between adjacent reverse biased structures.
{"title":"Analysis of single event effects at grazing angle","authors":"A. Campbell, O. Musseau, V. Ferlet-Cavrois, W. Stapor, P. McDonald","doi":"10.1109/RADECS.1997.698992","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698992","url":null,"abstract":"Investigation of single event effects at grazing angle by both charge collection and multiple bit upset measurements evidences modified collection mechanisms with charge transfer between adjacent reverse biased structures.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127584035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698876
N. Jankovic, D. Pantic
A total dose response of pnp Lateral Lambda Bipolar Transistor (L/sup 2/BT) is presented. The fabricated L/sup 2/BT structure is obtained by merging PMOS transistor and PNP lateral bipolar transistor in one device. With 35 nm thin oxide above active channel and base areas, L/sup 2/BT appears as convenient device for simultaneous analysis of radiation induced effects on bipolar and MOS type transistor operation. It was found that near-midgap interface surface recombination velocity affects bipolar operation at much lower total dose before substantial generation of positive trapped oxide charge develops to affect MOS operation. The relative weak sensitivity of L/sup 2/BT current gain on total accumulation dose is identified and explained. Based on this result, a new radiation hardening approach of lateral bipolar transistors is proposed with internal current loop sensing method.
{"title":"The analysis of radiation effects on combined bipolar-MOS structure","authors":"N. Jankovic, D. Pantic","doi":"10.1109/RADECS.1997.698876","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698876","url":null,"abstract":"A total dose response of pnp Lateral Lambda Bipolar Transistor (L/sup 2/BT) is presented. The fabricated L/sup 2/BT structure is obtained by merging PMOS transistor and PNP lateral bipolar transistor in one device. With 35 nm thin oxide above active channel and base areas, L/sup 2/BT appears as convenient device for simultaneous analysis of radiation induced effects on bipolar and MOS type transistor operation. It was found that near-midgap interface surface recombination velocity affects bipolar operation at much lower total dose before substantial generation of positive trapped oxide charge develops to affect MOS operation. The relative weak sensitivity of L/sup 2/BT current gain on total accumulation dose is identified and explained. Based on this result, a new radiation hardening approach of lateral bipolar transistors is proposed with internal current loop sensing method.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"563 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132704080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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