Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698988
E. Lorfèvre, E. Dachs, C. Detcheverry, C. Sudre, F. Roubaud, J. Palau, J. Gasiot, M. Calvet, R. Ecoffets
A 2D-simulation investigation determines the heavy ion failure mode of three different IGBT structures. The sensitivities of a N-channel IGBT, with and without n+ buffer and of a P-channel IGBT are compared in simulation.
{"title":"Failure mode of different irradiated power IGBT structures","authors":"E. Lorfèvre, E. Dachs, C. Detcheverry, C. Sudre, F. Roubaud, J. Palau, J. Gasiot, M. Calvet, R. Ecoffets","doi":"10.1109/RADECS.1997.698988","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698988","url":null,"abstract":"A 2D-simulation investigation determines the heavy ion failure mode of three different IGBT structures. The sensitivities of a N-channel IGBT, with and without n+ buffer and of a P-channel IGBT are compared in simulation.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116889197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698998
A. Chumakov, N. V. Kuznetsov
An approach for an estimation of a proton SEU cross section vs. proton energy is presented. The value of SEU cross section from proton test and another one from Cf/sup 252/ experiment are needed to determine this dependence or parameters of Bendel model.
{"title":"Simplified estimation of proton-induced SEU","authors":"A. Chumakov, N. V. Kuznetsov","doi":"10.1109/RADECS.1997.698998","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698998","url":null,"abstract":"An approach for an estimation of a proton SEU cross section vs. proton energy is presented. The value of SEU cross section from proton test and another one from Cf/sup 252/ experiment are needed to determine this dependence or parameters of Bendel model.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116721736","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698960
H. Henschel, O. Kohn, W. Lennartz, S. Metzger, H. U. Schmidt, J. Rosenkranz, B. Glessner, B. Siebert
A variety of undoped multimode step-index fibres and Ge-doped single mode and graded index fibres is irradiated by 14 MeV neutrons and /sup 60/Co gamma rays up to the same total dose. Radiation-induced loss and breaking stress are measured. The loss induced during gamma irradiation of Ge-doped fibres is about 2.5 times higher than during neutron irradiation with the same dose rate, up to a fluence of about 3/spl times/10/sup 12/ cm/sup -2/ (14 MeV). This loss ratio decreases to /spl les/2.0 after about 10/sup 13/ cm/sup -2/ (14 MeV). Monte Carlo calculations of the dose enhancement as caused by fast recoil protons out of the H-containing acrylate coating are confirmed experimentally. 14 MeV neutron irradiation up to /spl les/10/sup 13/ cm/sup -2/ seems to decrease fibre breaking stress by 3-4%, whereas /sup 60/Co gamma irradiation up to the same total dose has no effect.
{"title":"Comparison between fast neutron and gamma irradiation of optical fibres","authors":"H. Henschel, O. Kohn, W. Lennartz, S. Metzger, H. U. Schmidt, J. Rosenkranz, B. Glessner, B. Siebert","doi":"10.1109/RADECS.1997.698960","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698960","url":null,"abstract":"A variety of undoped multimode step-index fibres and Ge-doped single mode and graded index fibres is irradiated by 14 MeV neutrons and /sup 60/Co gamma rays up to the same total dose. Radiation-induced loss and breaking stress are measured. The loss induced during gamma irradiation of Ge-doped fibres is about 2.5 times higher than during neutron irradiation with the same dose rate, up to a fluence of about 3/spl times/10/sup 12/ cm/sup -2/ (14 MeV). This loss ratio decreases to /spl les/2.0 after about 10/sup 13/ cm/sup -2/ (14 MeV). Monte Carlo calculations of the dose enhancement as caused by fast recoil protons out of the H-containing acrylate coating are confirmed experimentally. 14 MeV neutron irradiation up to /spl les/10/sup 13/ cm/sup -2/ seems to decrease fibre breaking stress by 3-4%, whereas /sup 60/Co gamma irradiation up to the same total dose has no effect.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117176977","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698913
A. Nikiforov, O.B. Mavritsky, A. N. Egorov, A. Chumakov
The original "RADON-5EM" upgrade design versions of portable laser simulator for IC dose rate effects investigation are developed. The additional test resources such as optical waveguide homogenizer, second harmonic wavelength converter etc. as well as qualification tests results are presented.
{"title":"Upgrade design versions of \"RADON-5EM\" laser simulator","authors":"A. Nikiforov, O.B. Mavritsky, A. N. Egorov, A. Chumakov","doi":"10.1109/RADECS.1997.698913","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698913","url":null,"abstract":"The original \"RADON-5EM\" upgrade design versions of portable laser simulator for IC dose rate effects investigation are developed. The additional test resources such as optical waveguide homogenizer, second harmonic wavelength converter etc. as well as qualification tests results are presented.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115390428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698987
L. Varga, E. Horvath
A 3D study of deep charging in a satellite has been carried out. A complex model. Satellite structure has been assembled via software named "Builder" developed in-house for this purpose, The generated file formed an input file for the code "ACCEPT", a 3D Monte Carlo electron/photon propagation simulator. The code was run on the 500 MHz DEC Alpha RISC platform. Both low and high fluence conditions affecting the internal charging state of the satellite at GEO have been considered. The approach presented allows analysis of realistic charging scenarios.
{"title":"Spacecraft 3-dimensional charge deposition modelling","authors":"L. Varga, E. Horvath","doi":"10.1109/RADECS.1997.698987","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698987","url":null,"abstract":"A 3D study of deep charging in a satellite has been carried out. A complex model. Satellite structure has been assembled via software named \"Builder\" developed in-house for this purpose, The generated file formed an input file for the code \"ACCEPT\", a 3D Monte Carlo electron/photon propagation simulator. The code was run on the 500 MHz DEC Alpha RISC platform. Both low and high fluence conditions affecting the internal charging state of the satellite at GEO have been considered. The approach presented allows analysis of realistic charging scenarios.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114280709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698938
V. Ferlet-Cavrois, E. Dupont-Nivet, J. Vildeuil, O. Musseau, J. Leray
The dose rate hardening of a CMOS/SOI technology is evaluated in this paper. The response of elementary transistors is studied with an original method by using a 2D drift-diffusion code. The photocurrent model is introduced in SPICE simulation to predict the sensitivity of complex circuits. A good agreement is observed between simulation and experiment. Simple rules to harden circuits are deduced from simulation.
{"title":"Transient radiation effects in CMOS/SOI transistors and circuits","authors":"V. Ferlet-Cavrois, E. Dupont-Nivet, J. Vildeuil, O. Musseau, J. Leray","doi":"10.1109/RADECS.1997.698938","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698938","url":null,"abstract":"The dose rate hardening of a CMOS/SOI technology is evaluated in this paper. The response of elementary transistors is studied with an original method by using a 2D drift-diffusion code. The photocurrent model is introduced in SPICE simulation to predict the sensitivity of complex circuits. A good agreement is observed between simulation and experiment. Simple rules to harden circuits are deduced from simulation.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"39 4S 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126991803","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698908
E. Cordes, G. Fehrenbacher, R. Schutz, M. Sprunck, K. Hahn, R. Hofmann, J. Biersack, W. Wahl
An unfolding procedure is proposed which aims at obtaining spectral information of a neutron radiation field by the analysis of the response of a multi-element system consisting of converter type semiconductors. For the unfolding procedure an artificial neural network (feed forward network), trained by the back-propagation method, was used. The response functions of the single elements to neutron radiation were calculated by application of a computational model for an energy range from 10/sup -2/ eV to 10 MeV. The training of the artificial neural network was based on the computation of responses of a six-element system for a set of 300 neutron spectra and the application of the back-propagation method. The validation was performed by the unfolding of 100 computed responses. Two unfolding examples were pointed out for the determination of the neutron spectra. The spectra resulting from the unfolding procedure agree well with the original spectra used for the response computation.
提出了一种通过分析由转换型半导体组成的多元素系统的响应来获取中子辐射场光谱信息的展开方法。在展开过程中，采用了反向传播方法训练的人工神经网络(前馈网络)。应用10/sup -2/ eV ~ 10 MeV能量范围的计算模型，计算了单元素对中子辐射的响应函数。人工神经网络的训练是基于六元系统对300个中子谱的响应计算和反向传播方法的应用。通过对100个计算响应的展开进行验证。给出了测定中子能谱的两个展开例子。展开过程得到的谱与用于响应计算的原始谱吻合较好。
{"title":"An approach to unfold the response of a multi-element system using an artificial neural network","authors":"E. Cordes, G. Fehrenbacher, R. Schutz, M. Sprunck, K. Hahn, R. Hofmann, J. Biersack, W. Wahl","doi":"10.1109/RADECS.1997.698908","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698908","url":null,"abstract":"An unfolding procedure is proposed which aims at obtaining spectral information of a neutron radiation field by the analysis of the response of a multi-element system consisting of converter type semiconductors. For the unfolding procedure an artificial neural network (feed forward network), trained by the back-propagation method, was used. The response functions of the single elements to neutron radiation were calculated by application of a computational model for an energy range from 10/sup -2/ eV to 10 MeV. The training of the artificial neural network was based on the computation of responses of a six-element system for a set of 300 neutron spectra and the application of the back-propagation method. The validation was performed by the unfolding of 100 computed responses. Two unfolding examples were pointed out for the determination of the neutron spectra. The spectra resulting from the unfolding procedure agree well with the original spectra used for the response computation.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124871581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698833
M. Boratav
Over the last 30 years or so, a handful of events observed in ground-based cosmic ray detectors seem to have opened a new window in the field of high-energy astrophysics. These events have energies exceeding 5/spl times/10/sup 19/ eV (the region of the so-called Greisen-Zatsepin-Kuzmin spectral cutoff); they seem to come from no known astrophysical source; their chemical composition is mostly unknown; no conventional accelerating mechanism is considered as being able to explain their production and propagation to Earth. Only a dedicated detector can bring in the high-quality and statistically significant data needed to solve this long-lasting puzzle: this is the aim of the Anger Observatory project around which a world-wide collaboration is being mobilised. A large amount of information and technical documents can be consulted on many Web pages accessible through: http://www-lpnhep.in2p3.fr/auger/.
{"title":"Extremely high energy cosmic rays and the Auger Observatory","authors":"M. Boratav","doi":"10.1109/RADECS.1997.698833","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698833","url":null,"abstract":"Over the last 30 years or so, a handful of events observed in ground-based cosmic ray detectors seem to have opened a new window in the field of high-energy astrophysics. These events have energies exceeding 5/spl times/10/sup 19/ eV (the region of the so-called Greisen-Zatsepin-Kuzmin spectral cutoff); they seem to come from no known astrophysical source; their chemical composition is mostly unknown; no conventional accelerating mechanism is considered as being able to explain their production and propagation to Earth. Only a dedicated detector can bring in the high-quality and statistically significant data needed to solve this long-lasting puzzle: this is the aim of the Anger Observatory project around which a world-wide collaboration is being mobilised. A large amount of information and technical documents can be consulted on many Web pages accessible through: http://www-lpnhep.in2p3.fr/auger/.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"160 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115003510","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698899
A. Fox, W. Abare, A. Ross
This paper provides results of total dose and heavy ion testing of the IBM 0165400 DRAM, and discusses the architectural impacts of using these parts in a solid state digital recorder in a LEO orbit.
{"title":"Suitability of COTS IBM 64M DRAM in space","authors":"A. Fox, W. Abare, A. Ross","doi":"10.1109/RADECS.1997.698899","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698899","url":null,"abstract":"This paper provides results of total dose and heavy ion testing of the IBM 0165400 DRAM, and discusses the architectural impacts of using these parts in a solid state digital recorder in a LEO orbit.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132220591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698835
P. Masson, J. Autran, C. Raynaud, O. Flament, P. Paillet, C. Chabrerie
A method combining charge pumping and current-voltage measurements is presented for determining the surface potential versus gate voltage relationship in irradiated MOS transistors. This technique uses parameter optimization and simple numerical equations. It can be applied even for a high interface state density and for a non-uniform distribution in the silicon bandgap. This makes the method attractive for all studies concerning interface trap characterization or accurate modeling of MOS transistors in subthreshold regime. In this study, this new approach is applied to n-channel transistors irradiated up to 10 Mrad (SiO/sub 2/).
{"title":"Surface potential determination in irradiated MOS transistors combining current-voltage and charge pumping measurements","authors":"P. Masson, J. Autran, C. Raynaud, O. Flament, P. Paillet, C. Chabrerie","doi":"10.1109/RADECS.1997.698835","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698835","url":null,"abstract":"A method combining charge pumping and current-voltage measurements is presented for determining the surface potential versus gate voltage relationship in irradiated MOS transistors. This technique uses parameter optimization and simple numerical equations. It can be applied even for a high interface state density and for a non-uniform distribution in the silicon bandgap. This makes the method attractive for all studies concerning interface trap characterization or accurate modeling of MOS transistors in subthreshold regime. In this study, this new approach is applied to n-channel transistors irradiated up to 10 Mrad (SiO/sub 2/).","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134120552","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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