Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.699006
P. Mcnulty, M. Savage, D. Roth, C. Foster
Charge collection measurements show that proton-induced elastic interactions can dominate the production of SEUs in certain COTS parts when the value of the critical charge is sufficiently low. In the bulk device used in these measurements, the elastic recoils do not introduce any angular dependence nor are they energetic enough to upset the device. The spallation reactions should not introduce an angular dependence either because of the shape of the sensitive volume. However, an increase in charge-collection events is observed at very large angles of incidence, beginning at 78/spl deg/. This increase appears to be caused by secondary particles generated in the side walls of the chip's packaging, and this contribution would be significant for SEU production in devices with low values of the critical charge but not for those with large values.
{"title":"Proton SEU rate predictions","authors":"P. Mcnulty, M. Savage, D. Roth, C. Foster","doi":"10.1109/RADECS.1997.699006","DOIUrl":"https://doi.org/10.1109/RADECS.1997.699006","url":null,"abstract":"Charge collection measurements show that proton-induced elastic interactions can dominate the production of SEUs in certain COTS parts when the value of the critical charge is sufficiently low. In the bulk device used in these measurements, the elastic recoils do not introduce any angular dependence nor are they energetic enough to upset the device. The spallation reactions should not introduce an angular dependence either because of the shape of the sensitive volume. However, an increase in charge-collection events is observed at very large angles of incidence, beginning at 78/spl deg/. This increase appears to be caused by secondary particles generated in the side walls of the chip's packaging, and this contribution would be significant for SEU production in devices with low values of the critical charge but not for those with large values.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133414497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698910
B. O'Connell, A. Enright, C. Conneely, W. Lane, L. Adams
Recent developments in PMOS dosimetry have concentrated on improving the radiation sensitivity of the RADFET device, with the ultimate aim of RADFET operation in the milli-rad range. This is essential for successful use in the clinical and personnel environments. This paper details the research in to improving radiation sensitivity of RADFET devices by examining a range of dual-gate dielectric RADFETs for a number of key dosimetric parameters. The existing 0.4 /spl mu/m and 1 /spl mu/m thermal gate oxides in the PMOS process at the NMRC have been optimised for RADFET use, and are used as the base of a number of dual dielectrics which use Chemical Vapour Deposition (CVD) oxides and nitrides as the extra layer. Over thirty different dielectric combinations were fabricated and extensive radiation testing has led to results on radiation sensitivity, read-time stability and long-term stability. The use of a 0.6 /spl mu/m layer of TEOS based CVD oxide on a 0.4 /spl mu/m thermal oxide shows an impressive sensitivity of 7.54 mV/rad (Irradiation bias Vir=+5 V, 5 krads) and also performs well in other important dosimetric areas such as the read-time drift and post-irradiation fading.
PMOS剂量学的最新发展集中在提高RADFET器件的辐射灵敏度上，最终目标是RADFET在毫拉德范围内工作。这对于在临床和人员环境中成功使用至关重要。本文通过测试一系列双栅介质RADFET器件的一些关键剂量学参数，详细介绍了提高RADFET器件辐射灵敏度的研究。NMRC PMOS工艺中现有的0.4 /spl μ m和1 /spl μ m的热栅氧化物已经针对RADFET的使用进行了优化，并被用作许多使用化学气相沉积(CVD)氧化物和氮化物作为额外层的双电介质的基础。制作了30多种不同的介质组合，并进行了广泛的辐射测试，得出了辐射灵敏度、读取时间稳定性和长期稳定性的结果。在0.4 /spl μ l /m的热氧化物上使用0.6 /spl μ l /m的TEOS基CVD氧化物层，显示出令人印象深刻的7.54 mV/rad(辐照偏置Vir=+5 V, 5 krads)的灵敏度，并且在其他重要的剂量学领域(如读取时间漂移和辐照后衰减)也表现良好。
{"title":"Improving the sensitivity of PMOS dosimeters using dual dielectrics","authors":"B. O'Connell, A. Enright, C. Conneely, W. Lane, L. Adams","doi":"10.1109/RADECS.1997.698910","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698910","url":null,"abstract":"Recent developments in PMOS dosimetry have concentrated on improving the radiation sensitivity of the RADFET device, with the ultimate aim of RADFET operation in the milli-rad range. This is essential for successful use in the clinical and personnel environments. This paper details the research in to improving radiation sensitivity of RADFET devices by examining a range of dual-gate dielectric RADFETs for a number of key dosimetric parameters. The existing 0.4 /spl mu/m and 1 /spl mu/m thermal gate oxides in the PMOS process at the NMRC have been optimised for RADFET use, and are used as the base of a number of dual dielectrics which use Chemical Vapour Deposition (CVD) oxides and nitrides as the extra layer. Over thirty different dielectric combinations were fabricated and extensive radiation testing has led to results on radiation sensitivity, read-time stability and long-term stability. The use of a 0.6 /spl mu/m layer of TEOS based CVD oxide on a 0.4 /spl mu/m thermal oxide shows an impressive sensitivity of 7.54 mV/rad (Irradiation bias Vir=+5 V, 5 krads) and also performs well in other important dosimetric areas such as the read-time drift and post-irradiation fading.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"102 8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123165591","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698898
B. Azais, D. Lopez, M. Vié
This work deals with the impact of ionizing dose induced damage in linear junction isolated integrated circuits (JIICs) when exposed to neutron irradiations. A very low contribution of ionizing effects is shown for standard neutron test conditions.
{"title":"Neutron induced damage in linear integrated circuits: Ionizing effects contribution","authors":"B. Azais, D. Lopez, M. Vié","doi":"10.1109/RADECS.1997.698898","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698898","url":null,"abstract":"This work deals with the impact of ionizing dose induced damage in linear junction isolated integrated circuits (JIICs) when exposed to neutron irradiations. A very low contribution of ionizing effects is shown for standard neutron test conditions.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"28 5","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132869549","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698979
T. Calin, R. Velazco, M. Nicolaidis, S. Moss, S. Lalumondiere, V. Tran, R. Koga, K. Clark
The SEU hardness of a new CMOS storage cell based on latch redundancy has been analyzed using a laser beam simulation. We detected and investigated topology-dependent upset mechanisms due to charge collection at two sensitive nodes using a laser excitation between the nodes. Compact upset-immune device topologies are proposed, using spacing and isolation techniques for simultaneously sensitive node pairs, to achieve high immunity levels required in critical applications.
{"title":"Topology-related upset mechanisms in design hardened storage cells","authors":"T. Calin, R. Velazco, M. Nicolaidis, S. Moss, S. Lalumondiere, V. Tran, R. Koga, K. Clark","doi":"10.1109/RADECS.1997.698979","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698979","url":null,"abstract":"The SEU hardness of a new CMOS storage cell based on latch redundancy has been analyzed using a laser beam simulation. We detected and investigated topology-dependent upset mechanisms due to charge collection at two sensitive nodes using a laser excitation between the nodes. Compact upset-immune device topologies are proposed, using spacing and isolation techniques for simultaneously sensitive node pairs, to achieve high immunity levels required in critical applications.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115706464","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698946
E. Taylor, A. Paxton, H. Schone, R. F. Carson, J. Bristow, J. Lehman, M. Hibbs-Brenner, R. Morgan, T. Marta
Vertical cavity surface emitting lasers (VCSELs) have high potential for space applications, yet little is known of their sensitivity to radiation under vacuum conditions. The first observations of a commercially available proton implanted quantum well AlGaAs VCSEL operating at 850 nm in vacuo and irradiated by 4.5 MeV protons by a scanning ion microbeam is presented. Degradation of L-I-V responses at a proton dose of 1.19 MGy are discussed with particular attention drawn to heating arising from increased nonradiative carrier recombination and that resulting from the vacuum environment.
{"title":"In vacuo responses of an AlGaAs vertical cavity surface emitting laser irradiated by 4.5 MeV protons","authors":"E. Taylor, A. Paxton, H. Schone, R. F. Carson, J. Bristow, J. Lehman, M. Hibbs-Brenner, R. Morgan, T. Marta","doi":"10.1109/RADECS.1997.698946","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698946","url":null,"abstract":"Vertical cavity surface emitting lasers (VCSELs) have high potential for space applications, yet little is known of their sensitivity to radiation under vacuum conditions. The first observations of a commercially available proton implanted quantum well AlGaAs VCSEL operating at 850 nm in vacuo and irradiated by 4.5 MeV protons by a scanning ion microbeam is presented. Degradation of L-I-V responses at a proton dose of 1.19 MGy are discussed with particular attention drawn to heating arising from increased nonradiative carrier recombination and that resulting from the vacuum environment.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"606 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123255579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698981
C. Dyer, P. Truscott, C. Peerless, C. Watson, H. Evans, P. Knight, M. Cosby, C. Underwood, T. Cousins, R. Noulty
Flight data obtained between 1995 and 1997 from the Cosmic Radiation Environment Monitors CREAM and CREDO carried on UoSat-3, Space Shuttle, STRV-1a (Space Technology Research Vehicle) and APEX (Advanced Photovoltaic and Electronics Experiment Spacecraft) have been added to the dataset affording coverage since 1990. The modulation of cosmic rays and evolution of the South Atlantic Anomaly are observed, the former comprising a factor three increase at high latitudes and the latter a general increase accompanied by a westward drift. Comparison of particle fluxes and linear energy transfer spectra is made with improved environment and radiation transport calculations which account for shield distributions and secondary particles. While there is an encouraging convergence between predictions and observations, significant improvements are still required, particularly in the treatment of locally produced secondary particles.
{"title":"Updated measurements from CREAM and CREDO and implications for environment and shielding models","authors":"C. Dyer, P. Truscott, C. Peerless, C. Watson, H. Evans, P. Knight, M. Cosby, C. Underwood, T. Cousins, R. Noulty","doi":"10.1109/RADECS.1997.698981","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698981","url":null,"abstract":"Flight data obtained between 1995 and 1997 from the Cosmic Radiation Environment Monitors CREAM and CREDO carried on UoSat-3, Space Shuttle, STRV-1a (Space Technology Research Vehicle) and APEX (Advanced Photovoltaic and Electronics Experiment Spacecraft) have been added to the dataset affording coverage since 1990. The modulation of cosmic rays and evolution of the South Atlantic Anomaly are observed, the former comprising a factor three increase at high latitudes and the latter a general increase accompanied by a westward drift. Comparison of particle fluxes and linear energy transfer spectra is made with improved environment and radiation transport calculations which account for shield distributions and secondary particles. While there is an encouraging convergence between predictions and observations, significant improvements are still required, particularly in the treatment of locally produced secondary particles.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127577714","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698886
Lars H. Bomholt, Peter Regli, Thomas, 0., Korner, Wolfgang Fichtner
Electromagnetic wave effects play an increasing role in different fields of opto- and microelectronics. We present the combination and integration of two different semiconductor device simulators based on drift-diffusion and Monte Carlo charge carrier transport models with full wave computational electromagnetics software for the simulation of optic and non linear electromagnetic effects.
{"title":"Combination of device simulation with computational electromagnetics","authors":"Lars H. Bomholt, Peter Regli, Thomas, 0., Korner, Wolfgang Fichtner","doi":"10.1109/RADECS.1997.698886","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698886","url":null,"abstract":"Electromagnetic wave effects play an increasing role in different fields of opto- and microelectronics. We present the combination and integration of two different semiconductor device simulators based on drift-diffusion and Monte Carlo charge carrier transport models with full wave computational electromagnetics software for the simulation of optic and non linear electromagnetic effects.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"81 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116977779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RADECS.1997.698916
A. Boden, W. Kruger, T. Muller
Investigations have been carried out in order to assess and to improve the radiation tolerance of a remote controlled, manipulator-equipped vehicle. Operating in radiative environments, these robots have to withstand total dose stresses up to several 10 kGy. The complexity of tasks these vehicles have to perform makes it necessary to supply them with extensive electronic systems on board. Thus, it has to be taken into account, that semiconductor electronic devices are highly sensitive to ionizing radiation. An approach to rise the radiation tolerance level of such a robot is described. It's electronic system has been analyzed and then the whole robot has been exposed to Co/sub 60/ radiation to identify the weakest radiation tolerance of it's different electronic components. This way failures within the onboard electronic systems could be determined, that would have remained unidentified if only isolated electronic subsystems would have been irradiated. Once the sensitive components were identified, measures have been taken to improve their radiation tolerance. To verify the radiation hardening, the modified systems were submitted to further radiation tests and modified again according to the test results. Within this iterative approach it is possible to raise the radiation tolerance level of the vehicle to 15 kGy in the case all power subsystems are modified as demonstrated during this investigation. Even in the case that only two types of power subsystems are modified to radiation hardness, the radiation tolerance of the vehicle can be raised to 2.7 kGy, which is about three times the initial value.
{"title":"Investigation and improvement of the radiation tolerance of a teleoperated manipulator-equipped vehicle to be used in radioactive environments","authors":"A. Boden, W. Kruger, T. Muller","doi":"10.1109/RADECS.1997.698916","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698916","url":null,"abstract":"Investigations have been carried out in order to assess and to improve the radiation tolerance of a remote controlled, manipulator-equipped vehicle. Operating in radiative environments, these robots have to withstand total dose stresses up to several 10 kGy. The complexity of tasks these vehicles have to perform makes it necessary to supply them with extensive electronic systems on board. Thus, it has to be taken into account, that semiconductor electronic devices are highly sensitive to ionizing radiation. An approach to rise the radiation tolerance level of such a robot is described. It's electronic system has been analyzed and then the whole robot has been exposed to Co/sub 60/ radiation to identify the weakest radiation tolerance of it's different electronic components. This way failures within the onboard electronic systems could be determined, that would have remained unidentified if only isolated electronic subsystems would have been irradiated. Once the sensitive components were identified, measures have been taken to improve their radiation tolerance. To verify the radiation hardening, the modified systems were submitted to further radiation tests and modified again according to the test results. Within this iterative approach it is possible to raise the radiation tolerance level of the vehicle to 15 kGy in the case all power subsystems are modified as demonstrated during this investigation. Even in the case that only two types of power subsystems are modified to radiation hardness, the radiation tolerance of the vehicle can be raised to 2.7 kGy, which is about three times the initial value.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115391534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RADECS.1997.698902
C. Underwood
This paper presents the results of a 10-year study on radiation effects in commercial-off-the-shelf (COTS) memory devices operating within the on-board data handling systems of five low-Earth orbiting micro-satellites, designed and built at the University of Surrey (UoS). The ionising particle environment inside three of these spacecraft has been investigated concurrently using radiation monitoring payloads developed by UoS and the Defence Evaluation and Research Agency (DERA). Through the use of these monitoring instruments, and an allied programme of ground-based testing of the memory devices, the industry-standard computer models of the radiation environment have been verified, and the memory device behaviour has characterised with respect to single-event (SEEs) due to galactic cosmic-rays, geomagnetically trapped particles, and solar particles.
{"title":"The single-event-effect behaviour of commercial-off-the-shelf memory devices. A decade in low-Earth orbit","authors":"C. Underwood","doi":"10.1109/RADECS.1997.698902","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698902","url":null,"abstract":"This paper presents the results of a 10-year study on radiation effects in commercial-off-the-shelf (COTS) memory devices operating within the on-board data handling systems of five low-Earth orbiting micro-satellites, designed and built at the University of Surrey (UoS). The ionising particle environment inside three of these spacecraft has been investigated concurrently using radiation monitoring payloads developed by UoS and the Defence Evaluation and Research Agency (DERA). Through the use of these monitoring instruments, and an allied programme of ground-based testing of the memory devices, the industry-standard computer models of the radiation environment have been verified, and the memory device behaviour has characterised with respect to single-event (SEEs) due to galactic cosmic-rays, geomagnetically trapped particles, and solar particles.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128361448","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1109/RADECS.1997.698845
O. Flament, C. Chabrerie, V. Ferlet-Cavrois, J. Leray, F. Faccio, P. Jarron
This work concerns the development of a methodology specially devoted to lateral parasitic transistors that limit the total dose hardness of CMOS technologies. This methodology is based on i) the irradiation of standard NMOS transistors followed by ii) isochronal annealing measurements to determine energetic spectra of the field oxide trapped charge. Post irradiation effects have been evaluated through additional isothermal annealing experiments at 75/spl deg/C which are consistent with isochronal results. We propose a test procedure which allows to determine physical parameters helpful to improve comparison and qualification of CMOS commercial technologies.
{"title":"A methodology study lateral parasitic transistors in CMOS technologies","authors":"O. Flament, C. Chabrerie, V. Ferlet-Cavrois, J. Leray, F. Faccio, P. Jarron","doi":"10.1109/RADECS.1997.698845","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698845","url":null,"abstract":"This work concerns the development of a methodology specially devoted to lateral parasitic transistors that limit the total dose hardness of CMOS technologies. This methodology is based on i) the irradiation of standard NMOS transistors followed by ii) isochronal annealing measurements to determine energetic spectra of the field oxide trapped charge. Post irradiation effects have been evaluated through additional isothermal annealing experiments at 75/spl deg/C which are consistent with isochronal results. We propose a test procedure which allows to determine physical parameters helpful to improve comparison and qualification of CMOS commercial technologies.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127754257","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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