Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698961
H. Henschel, O. Kohn, H. U. Schmidt, J. Kirchhof, S. Unger
Eighteen single mode fibres doped with different Rare Earth elements are exposed to /sup 60/Co gamma radiation in order to estimate the radiation sensitivity of fibre amplifiers or fibre lasers and to find fibres with extremely high loss increase that are suited for dosimetry of low radiation levels. Induced loss measurements with varying dose rate confirmed the applicability of a simple dose rate transformation method also to Rare Earth doped fibres. Operation of a "distributed" fibre optic radiation sensor is demonstrated at a dose rate of less than 0.1 Gy/d.
{"title":"Radiation-induced loss of rare earth doped silica fibres","authors":"H. Henschel, O. Kohn, H. U. Schmidt, J. Kirchhof, S. Unger","doi":"10.1109/RADECS.1997.698961","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698961","url":null,"abstract":"Eighteen single mode fibres doped with different Rare Earth elements are exposed to /sup 60/Co gamma radiation in order to estimate the radiation sensitivity of fibre amplifiers or fibre lasers and to find fibres with extremely high loss increase that are suited for dosimetry of low radiation levels. Induced loss measurements with varying dose rate confirmed the applicability of a simple dose rate transformation method also to Rare Earth doped fibres. Operation of a \"distributed\" fibre optic radiation sensor is demonstrated at a dose rate of less than 0.1 Gy/d.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126086317","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.699008
R. Ecoffet, S. Duzellier, J. Barak, J. Levinson, Y. Lifshitz, M. Hass, C. Inguimbert, C. Detcheverry
Low energy, low range ions are used for creating various conditions for energy deposition in structures responsible for SEU effects. Sensitive volume thicknesses found using this method for a set of sub-micronic SRAMs and DRAMs range from 1 to 20 /spl mu/m.
{"title":"Estimation of upset sensitive volume thickness and critical energy using low energy heavy-ion beams","authors":"R. Ecoffet, S. Duzellier, J. Barak, J. Levinson, Y. Lifshitz, M. Hass, C. Inguimbert, C. Detcheverry","doi":"10.1109/RADECS.1997.699008","DOIUrl":"https://doi.org/10.1109/RADECS.1997.699008","url":null,"abstract":"Low energy, low range ions are used for creating various conditions for energy deposition in structures responsible for SEU effects. Sensitive volume thicknesses found using this method for a set of sub-micronic SRAMs and DRAMs range from 1 to 20 /spl mu/m.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121781775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698848
A. Sogoyan, S.V. Cherepko, V. Pershenkov, V. Rogov, V.N. Ulimov, V. Emelianov
The interface trap build-up mechanisms during post-irradiation thermal annealing and radiation-induced charge neutralisation (RICN) are experimentally investigated. The role of substrate electrons is shown to be significant in post-irradiation interface trap build-up. The RICN is found to be incapable to replace a standard thermal annealing test in terms of conservative low dose rate response estimation.
{"title":"Thermal- and radiation-induced interface traps in MOS devices","authors":"A. Sogoyan, S.V. Cherepko, V. Pershenkov, V. Rogov, V.N. Ulimov, V. Emelianov","doi":"10.1109/RADECS.1997.698848","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698848","url":null,"abstract":"The interface trap build-up mechanisms during post-irradiation thermal annealing and radiation-induced charge neutralisation (RICN) are experimentally investigated. The role of substrate electrons is shown to be significant in post-irradiation interface trap build-up. The RICN is found to be incapable to replace a standard thermal annealing test in terms of conservative low dose rate response estimation.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"109 12","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114134218","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698896
C. Chabrerie, J. Autran, O. Flament, J. Boudenot
We have developed a prototype test structure (named THERMOS) demonstrating the feasibility and the interest of the on-chip heating in a Silicon-On-Insulator technology. This circuit has been specially designed for the study of post-irradiation effects in a radiation-hardened CMOS technology. Preliminary results are presented here for the on-chip annealing of irradiated n-channel transistors.
{"title":"A new integrated test structure for on-chip post-irradiation annealing in MOS devices","authors":"C. Chabrerie, J. Autran, O. Flament, J. Boudenot","doi":"10.1109/RADECS.1997.698896","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698896","url":null,"abstract":"We have developed a prototype test structure (named THERMOS) demonstrating the feasibility and the interest of the on-chip heating in a Silicon-On-Insulator technology. This circuit has been specially designed for the study of post-irradiation effects in a radiation-hardened CMOS technology. Preliminary results are presented here for the on-chip annealing of irradiated n-channel transistors.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131057156","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698963
M. Van Uffelen, P. Jucker, P. Fenaux
The basic components of fiberoptic links, such as light emitting diodes (LED), pin-type photodetectors (PD) and optical fibers are evaluated under (/sup 60/Co) /spl gamma/-ray irradiation, so as to ascertain their qualification for nuclear applications and to develop predictive models for their behavior under well defined environmental conditions, such as those encountered in nuclear power plants. This paper presents some results of irradiation tests, together with a discussion of proposals for optical fibers behavioral models.
{"title":"Radiation resistance of fiberoptic components and predictive models for optical fiber systems in nuclear environments","authors":"M. Van Uffelen, P. Jucker, P. Fenaux","doi":"10.1109/RADECS.1997.698963","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698963","url":null,"abstract":"The basic components of fiberoptic links, such as light emitting diodes (LED), pin-type photodetectors (PD) and optical fibers are evaluated under (/sup 60/Co) /spl gamma/-ray irradiation, so as to ascertain their qualification for nuclear applications and to develop predictive models for their behavior under well defined environmental conditions, such as those encountered in nuclear power plants. This paper presents some results of irradiation tests, together with a discussion of proposals for optical fibers behavioral models.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114246220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698912
S. Kronenberg, G. Brucker, E. Bechtel
This paper describes the design and characterization of a directional Solid State Detector (SSD) that generates images of radiation point sources and scatter patterns from irradiated targets, thus accurately identifying their locations. Previous papers demonstrated that other types of directional radiation sensors, such as Ionization chambers, Geiger-Mueller and Scintillation Counters, can be designed to detect and locate arrays of gamma ray and X-ray point sources and broad scatter patterns.
{"title":"Solid state sensor for locating and imaging sources of gamma and X-radiation","authors":"S. Kronenberg, G. Brucker, E. Bechtel","doi":"10.1109/RADECS.1997.698912","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698912","url":null,"abstract":"This paper describes the design and characterization of a directional Solid State Detector (SSD) that generates images of radiation point sources and scatter patterns from irradiated targets, thus accurately identifying their locations. Previous papers demonstrated that other types of directional radiation sensors, such as Ionization chambers, Geiger-Mueller and Scintillation Counters, can be designed to detect and locate arrays of gamma ray and X-ray point sources and broad scatter patterns.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129009352","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698906
J. V. Osborn, R. Lacoe, D. C. Mayer, G. Yabiku
We have measured the effects of total ionizing dose (TID) on CMOS FETs, ring oscillators and field-oxide transistor test structures fabricated at three different commercial foundries with four different processes. The foundries spanned a range of integration levels and included Hewlett-Packard (HP) 0.5 /spl mu/m and 0.8 /spl mu/m processes, an Orbit 1.2 /spl mu/m process, and an AMI 1.6 /spl mu/m process. We found that the highest tolerance to TID was for the HP 0.5 /spl mu/m process, where the shift in NMOS threshold voltage was less than 40 mV at 300 krad. An examination of the dependence of the threshold voltage shift on gate oxide thickness indicated that oxides of the different commercial processes were of similar quality, and that the improvement in the total dose tolerance of the HP 0.5 /spl mu/m technology is associated with the scaling of the gate oxide. Measurements on field-oxide transistors from the HP 0.5 /spl mu/m process were shown not to invert for signal voltages at 300 krad, maintaining the integrity of the LOCOS isolation. The impact of these results is, discussed in terms of the potential insertion of commercial microelectronics into space systems.
{"title":"Total dose hardness of three commercial CMOS microelectronics foundries","authors":"J. V. Osborn, R. Lacoe, D. C. Mayer, G. Yabiku","doi":"10.1109/RADECS.1997.698906","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698906","url":null,"abstract":"We have measured the effects of total ionizing dose (TID) on CMOS FETs, ring oscillators and field-oxide transistor test structures fabricated at three different commercial foundries with four different processes. The foundries spanned a range of integration levels and included Hewlett-Packard (HP) 0.5 /spl mu/m and 0.8 /spl mu/m processes, an Orbit 1.2 /spl mu/m process, and an AMI 1.6 /spl mu/m process. We found that the highest tolerance to TID was for the HP 0.5 /spl mu/m process, where the shift in NMOS threshold voltage was less than 40 mV at 300 krad. An examination of the dependence of the threshold voltage shift on gate oxide thickness indicated that oxides of the different commercial processes were of similar quality, and that the improvement in the total dose tolerance of the HP 0.5 /spl mu/m technology is associated with the scaling of the gate oxide. Measurements on field-oxide transistors from the HP 0.5 /spl mu/m process were shown not to invert for signal voltages at 300 krad, maintaining the integrity of the LOCOS isolation. The impact of these results is, discussed in terms of the potential insertion of commercial microelectronics into space systems.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"128 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132236071","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698995
C. Vial, J. Palau, J. Gasiot, J. Nadai, M. Calvet, S. Fourtine, D. Roth, O. Bersillon
Comparison between HETC and COSMIC codes shows that COSMIC code, although being a protons-silicon interaction code, can be used to calculate the energy deposited by high energy neutrons in silicon.
{"title":"Energy deposited by high energy neutrons and protons in silicon (comparison between HETC and COSMIC codes)","authors":"C. Vial, J. Palau, J. Gasiot, J. Nadai, M. Calvet, S. Fourtine, D. Roth, O. Bersillon","doi":"10.1109/RADECS.1997.698995","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698995","url":null,"abstract":"Comparison between HETC and COSMIC codes shows that COSMIC code, although being a protons-silicon interaction code, can be used to calculate the energy deposited by high energy neutrons in silicon.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129610055","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698941
P. Skorobogatov, A. Nikiforov, B. A. Ahabaev
2D-numerical joint solution of the optical equations and fundamental system of equations was performed to check the adequacy of laser simulation in application to dose rate latch-up. The influence of shadowing and high intensity effects was analysed. The simulation adequacy was verified comparative simulation to radiation tests.
{"title":"Laser simulation adequacy of dose rate latch-up","authors":"P. Skorobogatov, A. Nikiforov, B. A. Ahabaev","doi":"10.1109/RADECS.1997.698941","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698941","url":null,"abstract":"2D-numerical joint solution of the optical equations and fundamental system of equations was performed to check the adequacy of laser simulation in application to dose rate latch-up. The influence of shadowing and high intensity effects was analysed. The simulation adequacy was verified comparative simulation to radiation tests.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130304172","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698881
S. Telliez, J. Brasile, N. Samama
This paper presents a new behavioral model of GaAs MESFETs when subjected to power pulses. This basic model appears to fit published experimental results satisfactorily and is shown to be precise enough for a first estimate of the power needed to disturb or destroy the considered components.
{"title":"MESFET destruction model and experimental validation","authors":"S. Telliez, J. Brasile, N. Samama","doi":"10.1109/RADECS.1997.698881","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698881","url":null,"abstract":"This paper presents a new behavioral model of GaAs MESFETs when subjected to power pulses. This basic model appears to fit published experimental results satisfactorily and is shown to be precise enough for a first estimate of the power needed to disturb or destroy the considered components.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132212528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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