Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698893
X. Montagner, R. Briand, P. Fouillat, peixiong zhao, A. Touboui, K. Galloway, M. Calvet, P. Calvel
A method to predict low dose rate degradation of bipolar transistors using high dose-rate, high temperature irradiation is evaluated, based on an analysis of four new rad-parameters that are introduced in the BJT SPICE model. This improved BST model describes the radiation-induced excess base current with great accuracy. The low-level values of the rad-parameters are good tools for evaluating the proposed high-temperature test method because of their high sensitivity to radiation-induced degradation.
{"title":"Dose-rate and irradiation temperature dependence of BJT SPICE model rad-parameters","authors":"X. Montagner, R. Briand, P. Fouillat, peixiong zhao, A. Touboui, K. Galloway, M. Calvet, P. Calvel","doi":"10.1109/RADECS.1997.698893","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698893","url":null,"abstract":"A method to predict low dose rate degradation of bipolar transistors using high dose-rate, high temperature irradiation is evaluated, based on an analysis of four new rad-parameters that are introduced in the BJT SPICE model. This improved BST model describes the radiation-induced excess base current with great accuracy. The low-level values of the rad-parameters are good tools for evaluating the proposed high-temperature test method because of their high sensitivity to radiation-induced degradation.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"82 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124467133","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698965
O. Deparis, M. Noel, M. Decréton
In order to check for the impact of a low fission neutron flux on the ionising radiation sensitivity of silica fibres, and in view of applications in the periphery of reactor cores, an irradiation experiment was carried out on optical fibres involving thermal and fast neutrons in a high gamma background. After this neutron test, the fibres were further irradiated in a pure gamma field. This gamma test was also performed on another set of identical fibres but preirradiated with gamma rays only, approximately up to the same total equivalent dose. The specific neutron induced degradation has been checked by comparing the gamma sensitivity of these two sets of fibres. The sensitivities of neutron preirradiated samples were found to be higher than the sensitivities of gamma preirradiated ones for the three fibres under test, possibly revealing a specific neutron degradation. These preliminary results show that 1) the gamma sensitivity of fibre samples preirradiated separately with gamma rays and low fission neutron flux can change; 2) this change leads to a higher sensitivity of neutron preirradiated samples compared to gamma preirradiated ones; 3) this change depends on the fibre core material and its fabrication process.
{"title":"Radiation-induced attenuation in SiO/sub 2//F-SiO/sub 2/ fibres under low neutron flux","authors":"O. Deparis, M. Noel, M. Decréton","doi":"10.1109/RADECS.1997.698965","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698965","url":null,"abstract":"In order to check for the impact of a low fission neutron flux on the ionising radiation sensitivity of silica fibres, and in view of applications in the periphery of reactor cores, an irradiation experiment was carried out on optical fibres involving thermal and fast neutrons in a high gamma background. After this neutron test, the fibres were further irradiated in a pure gamma field. This gamma test was also performed on another set of identical fibres but preirradiated with gamma rays only, approximately up to the same total equivalent dose. The specific neutron induced degradation has been checked by comparing the gamma sensitivity of these two sets of fibres. The sensitivities of neutron preirradiated samples were found to be higher than the sensitivities of gamma preirradiated ones for the three fibres under test, possibly revealing a specific neutron degradation. These preliminary results show that 1) the gamma sensitivity of fibre samples preirradiated separately with gamma rays and low fission neutron flux can change; 2) this change leads to a higher sensitivity of neutron preirradiated samples compared to gamma preirradiated ones; 3) this change depends on the fibre core material and its fabrication process.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121599947","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698996
A. Akkerman, J. Barak, J. Levinson, Y. Lifshitz
The effect of the angle of incidence on the proton induced single events in devices with finite dimensions is studied using a modified Monte Carlo model. The physical reasons for the existence or the absence of an anisotropy of the single event occurrence (with respect to the proton angle of incidence) are highlighted for the first time. Several different cases are found: (1) A significant anisotropy is predicted for devices with small lateral dimensions, a smaller sensitive layer thickness, and a large critical energy. The origin of this angular dependence is shown to be the contribution of the highly anisotropic medium mass fragments which is dominant for these conditions. (2) Published experimental data indicate only a small anisotropy in practical devices, which are characterized by a small critical deposited energy needed for SEU. It is shown that for these devices, most of the charge is created by the heavy mass fragments, which are isotropic. (3) In surface barrier detectors (SBDs) which have large lateral dimensions the effect of the isotropic light mass fragments takes over and the anisotropy for proton events is small even for large critical energies and a small sensitive layer thickness. The conclusion of the present work is that the single event rate in space can be evaluated by the normal incidence cross sections for all devices which have a significant sensitivity for proton induced events.
{"title":"The effect of the angle of incidence on proton induced single events in devices-a critical assessment by modeling","authors":"A. Akkerman, J. Barak, J. Levinson, Y. Lifshitz","doi":"10.1109/RADECS.1997.698996","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698996","url":null,"abstract":"The effect of the angle of incidence on the proton induced single events in devices with finite dimensions is studied using a modified Monte Carlo model. The physical reasons for the existence or the absence of an anisotropy of the single event occurrence (with respect to the proton angle of incidence) are highlighted for the first time. Several different cases are found: (1) A significant anisotropy is predicted for devices with small lateral dimensions, a smaller sensitive layer thickness, and a large critical energy. The origin of this angular dependence is shown to be the contribution of the highly anisotropic medium mass fragments which is dominant for these conditions. (2) Published experimental data indicate only a small anisotropy in practical devices, which are characterized by a small critical deposited energy needed for SEU. It is shown that for these devices, most of the charge is created by the heavy mass fragments, which are isotropic. (3) In surface barrier detectors (SBDs) which have large lateral dimensions the effect of the isotropic light mass fragments takes over and the anisotropy for proton events is small even for large critical energies and a small sensitive layer thickness. The conclusion of the present work is that the single event rate in space can be evaluated by the normal incidence cross sections for all devices which have a significant sensitivity for proton induced events.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115436096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698955
G. Williams, E. Friebele
Measurements have been made of the effect of /spl gamma/-irradiation on the performance of active erbium-doped fiber devices. These include the decrease in optical power of an erbium-doped fiber amplifier (EDFA) and a superluminescent source (SLS), and the shift in centroid wavelength of the SLS with exposure. Calculations have been performed to correlate these effects with the radiation-induced absorption measured passively. Excellent agreement was obtained for the radiation-induced power loss in the EDFA, and good agreement was obtained for the SLS. However, the calculation underestimated the centroid wavelength shift in the SLS by a factor of /spl sim/3. A model has been developed to extrapolate the results of passive loss measurements to the low dose rates typical of the natural space environment.
{"title":"Space radiation effects on erbium-doped fiber devices: sources, amplifiers, and passive measurements","authors":"G. Williams, E. Friebele","doi":"10.1109/RADECS.1997.698955","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698955","url":null,"abstract":"Measurements have been made of the effect of /spl gamma/-irradiation on the performance of active erbium-doped fiber devices. These include the decrease in optical power of an erbium-doped fiber amplifier (EDFA) and a superluminescent source (SLS), and the shift in centroid wavelength of the SLS with exposure. Calculations have been performed to correlate these effects with the radiation-induced absorption measured passively. Excellent agreement was obtained for the radiation-induced power loss in the EDFA, and good agreement was obtained for the SLS. However, the calculation underestimated the centroid wavelength shift in the SLS by a factor of /spl sim/3. A model has been developed to extrapolate the results of passive loss measurements to the low dose rates typical of the natural space environment.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132345690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698841
P. Paillet, J. Touron, J. Leray, C. Cirba, A. Michez
Charge trapping on several energy levels and thermally activated detrapping phenomena in SiO/sub 2/ have been determined by finite elements simulation. The results obtained agree well with experimental charge detrapping measurements, and enable the simulation of post-irradiation effects in Si/SiO/sub 2/ structures.
{"title":"Simulation of multi-level radiation-induced charge trapping and thermally activated phenomena in SiO/sub 2/","authors":"P. Paillet, J. Touron, J. Leray, C. Cirba, A. Michez","doi":"10.1109/RADECS.1997.698841","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698841","url":null,"abstract":"Charge trapping on several energy levels and thermally activated detrapping phenomena in SiO/sub 2/ have been determined by finite elements simulation. The results obtained agree well with experimental charge detrapping measurements, and enable the simulation of post-irradiation effects in Si/SiO/sub 2/ structures.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131413633","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698856
M. Martini, F. Meinardi, E. Rosetta, G. Spinolo, A. Vedda, J. Leray, P. Paillet, J. Autran, R. Devine
Thermally Stimulated Luminescence (TSL) properties of SIMOX oxides, induced by x-irradiation, have been studied in the temperature range 100-400 K. For the first time studied in SIMOX, a series of TSL peaks at 110, 150 and 200 K appear clearly. A continuous distribution of trap levels ranging from 0.4 to 1.1 eV has been found to be responsible for the broad and intense peak observed at 200 K; moreover, the wavelength distribution of the emitted light has revealed the presence of an emission centred at 2.7 eV. A comparison with the TSL properties of synthetic silica is presented, and the results are discussed also in the light of previous characterizations of trap levels obtained by electrical techniques. This study gives new insight concerning the electron and hole traps structures in SIMOX compared to bulk silica.
{"title":"Radiation induced trap levels in SIMOX oxides: low temperature thermally stimulated luminescence","authors":"M. Martini, F. Meinardi, E. Rosetta, G. Spinolo, A. Vedda, J. Leray, P. Paillet, J. Autran, R. Devine","doi":"10.1109/RADECS.1997.698856","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698856","url":null,"abstract":"Thermally Stimulated Luminescence (TSL) properties of SIMOX oxides, induced by x-irradiation, have been studied in the temperature range 100-400 K. For the first time studied in SIMOX, a series of TSL peaks at 110, 150 and 200 K appear clearly. A continuous distribution of trap levels ranging from 0.4 to 1.1 eV has been found to be responsible for the broad and intense peak observed at 200 K; moreover, the wavelength distribution of the emitted light has revealed the presence of an emission centred at 2.7 eV. A comparison with the TSL properties of synthetic silica is presented, and the results are discussed also in the light of previous characterizations of trap levels obtained by electrical techniques. This study gives new insight concerning the electron and hole traps structures in SIMOX compared to bulk silica.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131203439","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698977
A. L. Tomashuk, E. Dianov, Konstantin M. Golant, A. Rybaltovskii
/spl gamma/-radiation-induced absorption in the visible spectral region is studied in H/sub 2/-loaded and untreated optical fibers with high-OH low-Cl KU core and low-OH low-Cl KS-4V core. H/sub 2/-loading is found to suppress the low-dosage transient absorption band centered at 670 nm in KS-4V fibers. After irradiation to 1.7 MGy(Si), H/sub 2/-loaded fibers show losses many times lower than the untreated fibers. H/sub 2/-loaded and irradiated fibers are found to retain very high radiation resistance under subsequent irradiations even in the absence of molecular hydrogen. It is concluded that H/sub 2/-loading followed by pre-irradiation can be used as an efficient radiation hardening technique for pure-silica optical fibers.
{"title":"/spl gamma/-radiation-induced absorption in pure-silica-core fibers in the visible spectral region: the effect of H/sub 2/-loading","authors":"A. L. Tomashuk, E. Dianov, Konstantin M. Golant, A. Rybaltovskii","doi":"10.1109/RADECS.1997.698977","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698977","url":null,"abstract":"/spl gamma/-radiation-induced absorption in the visible spectral region is studied in H/sub 2/-loaded and untreated optical fibers with high-OH low-Cl KU core and low-OH low-Cl KS-4V core. H/sub 2/-loading is found to suppress the low-dosage transient absorption band centered at 670 nm in KS-4V fibers. After irradiation to 1.7 MGy(Si), H/sub 2/-loaded fibers show losses many times lower than the untreated fibers. H/sub 2/-loaded and irradiated fibers are found to retain very high radiation resistance under subsequent irradiations even in the absence of molecular hydrogen. It is concluded that H/sub 2/-loading followed by pre-irradiation can be used as an efficient radiation hardening technique for pure-silica optical fibers.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114734339","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698956
K. Gill, V. Arbet-Engels, J. Batten, G. Cervelli, R. Grabit, C. Mommaert, G. Stefanini, J. Troska, F. Vasey
Optical links are being developed to transfer analogue tracking data and digital timing and control signals in the future Compact Muon Solenoid (CMS) experiment at CERN. The radiation environment inside the CMS tracker will be extreme, with hadron fluences up to /spl sim/10/sup 14//cm/sup 2/ and ionising doses of /spl sim/100 kGy over the experimental lifetime. Prototype link elements, consisting of commercially available 1310 nm multi-quantum-well InGaAsP lasers and InGaAs p-i-n photodiodes, have been irradiated in a fully packaged form with /spl sim/6 MeV neutrons to 10/sup 15/ n/cm/sup 2/, 24 GeV protons to 4/spl times/10/sup 14/ p/cm/sup 2/ and /sup 60/Co-gammas to 100 kGy. Three types of single-mode optical fiber, two pure-silica core and one Ge-doped core, were irradiated in several stages with /sup 60/Co-gammas to a total dose of /spl sim/90 kGy. Neutron and proton damage induced large increases in laser threshold and significant decreases in light output efficiency. P-i-n leakage current increased by up to 6-7 orders of magnitude for neutron and proton damage. P-i-n response was relatively unaffected until /spl sim/2/spl times/10/sup 14/ n/cm/sup 2/, or /spl sim/4/spl times/10/sup 13/ p/cm, after which the photocurrent decreased rapidly. Gamma damage after 100 kGy was minor in comparison to hadron damage in both the lasers and p-i-n photodiodes. The radiation induced attenuation at 1300 nm in the optical fibers was dependent upon the fiber type, with losses of 0.08 dB/m for the pure-silica core fiber and 0.12 dB/m in the Ge-doped core fiber, after /spl sim/90 kGy. The annealing in one of the pure-silica core fibers was found to be temporary in nature.
{"title":"Radiation damage studies of optoelectronic components for the CMS tracker optical links","authors":"K. Gill, V. Arbet-Engels, J. Batten, G. Cervelli, R. Grabit, C. Mommaert, G. Stefanini, J. Troska, F. Vasey","doi":"10.1109/RADECS.1997.698956","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698956","url":null,"abstract":"Optical links are being developed to transfer analogue tracking data and digital timing and control signals in the future Compact Muon Solenoid (CMS) experiment at CERN. The radiation environment inside the CMS tracker will be extreme, with hadron fluences up to /spl sim/10/sup 14//cm/sup 2/ and ionising doses of /spl sim/100 kGy over the experimental lifetime. Prototype link elements, consisting of commercially available 1310 nm multi-quantum-well InGaAsP lasers and InGaAs p-i-n photodiodes, have been irradiated in a fully packaged form with /spl sim/6 MeV neutrons to 10/sup 15/ n/cm/sup 2/, 24 GeV protons to 4/spl times/10/sup 14/ p/cm/sup 2/ and /sup 60/Co-gammas to 100 kGy. Three types of single-mode optical fiber, two pure-silica core and one Ge-doped core, were irradiated in several stages with /sup 60/Co-gammas to a total dose of /spl sim/90 kGy. Neutron and proton damage induced large increases in laser threshold and significant decreases in light output efficiency. P-i-n leakage current increased by up to 6-7 orders of magnitude for neutron and proton damage. P-i-n response was relatively unaffected until /spl sim/2/spl times/10/sup 14/ n/cm/sup 2/, or /spl sim/4/spl times/10/sup 13/ p/cm, after which the photocurrent decreased rapidly. Gamma damage after 100 kGy was minor in comparison to hadron damage in both the lasers and p-i-n photodiodes. The radiation induced attenuation at 1300 nm in the optical fibers was dependent upon the fiber type, with losses of 0.08 dB/m for the pure-silica core fiber and 0.12 dB/m in the Ge-doped core fiber, after /spl sim/90 kGy. The annealing in one of the pure-silica core fibers was found to be temporary in nature.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"20 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129153884","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698990
J. Barak, E. Adler, B. Fischer, M. Schlogl, S. Metzger
The first simultaneous microbeam mapping of single event upset (SEU) and latchup (SEL) in the CMOS RAM HR165162 is presented. We found that the shapes of the sensitive areas depend on V/sub DD/, on the ions being used and on the site on the chip being hit by the ion. In particular, we found SEL sensitive sites close to the main power supply lines between the memory-bit-arrays by detecting the accompanying current surge. All these SELs were also accompanied by bit-flips elsewhere in the memory (which we call "indirect" SEUs in contrast to the well known SEUs induced in the hit memory cell only). When identical SEL sensitive sites were hit farther away from the supply lines only indirect SEL sensitive sites could be detected. We interpret these events as "latent" latchups in contrast to the "classical" ones detected by their induced current surge. These latent SELs were probably decoupled from the main supply lines by the high resistivity of the local supply lines.
{"title":"Microbeam mapping of single event latchups and single event upsets in CMOS SRAMs","authors":"J. Barak, E. Adler, B. Fischer, M. Schlogl, S. Metzger","doi":"10.1109/RADECS.1997.698990","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698990","url":null,"abstract":"The first simultaneous microbeam mapping of single event upset (SEU) and latchup (SEL) in the CMOS RAM HR165162 is presented. We found that the shapes of the sensitive areas depend on V/sub DD/, on the ions being used and on the site on the chip being hit by the ion. In particular, we found SEL sensitive sites close to the main power supply lines between the memory-bit-arrays by detecting the accompanying current surge. All these SELs were also accompanied by bit-flips elsewhere in the memory (which we call \"indirect\" SEUs in contrast to the well known SEUs induced in the hit memory cell only). When identical SEL sensitive sites were hit farther away from the supply lines only indirect SEL sensitive sites could be detected. We interpret these events as \"latent\" latchups in contrast to the \"classical\" ones detected by their induced current surge. These latent SELs were probably decoupled from the main supply lines by the high resistivity of the local supply lines.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132494808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1997-09-15DOI: 10.1109/RADECS.1997.698872
S. V. Bytkin
We have investigated the possible application of germanium doped CZ silicon, (n-Si) to the manufacture of rad hard bipolar npn transistors, ICs and low power thyristors. The radiation sensitivity of bipolar npn transistors depends on the Ge concentration in the source silicon wafers. The functional failure level of bipolar TTL IC, manufactured using dielectric isolation technology on initial n-Si wafers, doped by germanium up to a concentration of 7.5/spl times/10/sup 19/ cm/sup -3/, may be theoretically eight times greater, than for those, manufactured by the standard technology. For npnp structures, manufactured on n-Si this work showed the radiation hardness improvement of the thyristor holding current.
{"title":"Use of germanium doped silicon (n-Si) for manufacturing radiation hardened devices and integrated circuits","authors":"S. V. Bytkin","doi":"10.1109/RADECS.1997.698872","DOIUrl":"https://doi.org/10.1109/RADECS.1997.698872","url":null,"abstract":"We have investigated the possible application of germanium doped CZ silicon, (n-Si) to the manufacture of rad hard bipolar npn transistors, ICs and low power thyristors. The radiation sensitivity of bipolar npn transistors depends on the Ge concentration in the source silicon wafers. The functional failure level of bipolar TTL IC, manufactured using dielectric isolation technology on initial n-Si wafers, doped by germanium up to a concentration of 7.5/spl times/10/sup 19/ cm/sup -3/, may be theoretically eight times greater, than for those, manufactured by the standard technology. For npnp structures, manufactured on n-Si this work showed the radiation hardness improvement of the thyristor holding current.","PeriodicalId":106774,"journal":{"name":"RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)","volume":"38 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1997-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133131775","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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