Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme
Two-dimensional (2D) materials and their heterostructures offer promising pathways for intercalated ion migration and regulated filament growth in resistive switching (RS) devices, enabled by their van der Waals (vdW) gaps. In vertically aligned 2D materials, this vdW gap-mediated ion transport holds great potential for high-density integration and reliable RS performance for memristor crossbar arrays. However, the fundamental switching mechanisms and their contributions to the RS remain inadequately understood. In this work, we investigate silver (Ag) filament-based threshold switching (TS) in heterostructures comprising vertically aligned 2D molybdenum disulfide (VAMoS2) grown via sulfurization and silicon oxide (SiOx). Compared to SiOx-only devices, the SiOx/VAMoS2 devices exhibit TS with higher on-threshold and hold voltages, each approximately 0.4 V, faster switching times down to 356 ns under a 4 V pulse, and a lower cycle-to-cycle on-current variability of 3.0%. A physics-based, variability-aware model reveals that confined Ag ion migration within the vdW gaps in VAMoS2 forms ultrathin seed filaments, which guide filament growth in the SiOx layer. These findings establish SiOx/VAMoS2 heterostructures as a promising concept for reliable TS in vertical device architectures for emerging memories and neuromorphic computing.
{"title":"Reduced Variability in Threshold Switches Using Heterostructures of SiOx and Vertically Aligned MoS2","authors":"Jimin Lee, Rana Walied Ahmad, Sofía Cruces, Dennis Braun, Lukas Völkel, Ke Ran, Joachim Mayer, Stephan Menzel, Alwin Daus, Max C. Lemme","doi":"10.1002/aelm.202500800","DOIUrl":"https://doi.org/10.1002/aelm.202500800","url":null,"abstract":"Two-dimensional (2D) materials and their heterostructures offer promising pathways for intercalated ion migration and regulated filament growth in resistive switching (RS) devices, enabled by their van der Waals (vdW) gaps. In vertically aligned 2D materials, this vdW gap-mediated ion transport holds great potential for high-density integration and reliable RS performance for memristor crossbar arrays. However, the fundamental switching mechanisms and their contributions to the RS remain inadequately understood. In this work, we investigate silver (Ag) filament-based threshold switching (TS) in heterostructures comprising vertically aligned 2D molybdenum disulfide (VAMoS<sub>2</sub>) grown via sulfurization and silicon oxide (SiO<sub>x</sub>). Compared to SiO<sub>x</sub>-only devices, the SiO<sub>x</sub>/VAMoS<sub>2</sub> devices exhibit TS with higher on-threshold and hold voltages, each approximately 0.4 V, faster switching times down to 356 ns under a 4 V pulse, and a lower cycle-to-cycle on-current variability of 3.0%. A physics-based, variability-aware model reveals that confined Ag ion migration within the vdW gaps in VAMoS<sub>2</sub> forms ultrathin seed filaments, which guide filament growth in the SiO<sub>x</sub> layer. These findings establish SiO<sub>x</sub>/VAMoS<sub>2</sub> heterostructures as a promising concept for reliable TS in vertical device architectures for emerging memories and neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"76 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147393393","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing
Resonant tunneling is a quantum mechanical effect that enables electrons to traverse classically forbidden regions of space. The engineering of this quantum effect in wide-bandgap semiconductors promises important technological benefits as it seamlessly combines ultra-fast electron transport dynamics with superior power-handling capabilities. Here, we report the first realization of highly coherent electronic quantum interference and resonant tunneling injection in wide-bandgap triple-barrier heterostructures. Enabled by the high structural quality of the GaN/AlN triple-barrier active region, we observe multiple resonant tunneling peaks and negative differential conductance at room temperature. The robustness of the inter-well resonant tunneling current is experimentally confirmed via temperature-dependent electronic transport and the generation of electrically tunable microwave oscillations. These results represent a stepping stone in the engineering of intersubband tunneling transport in wide-bandgap III-nitride semiconductors, raising hopes for the realization of intersubband optical amplification and frequency-modulated resonant tunneling oscillators.
{"title":"Electrically Tunable Room-Temperature Microwave Oscillations in GaN/AlN Triple-Barrier Resonant Tunneling Diodes","authors":"Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing","doi":"10.1002/aelm.202500419","DOIUrl":"https://doi.org/10.1002/aelm.202500419","url":null,"abstract":"Resonant tunneling is a quantum mechanical effect that enables electrons to traverse classically forbidden regions of space. The engineering of this quantum effect in wide-bandgap semiconductors promises important technological benefits as it seamlessly combines ultra-fast electron transport dynamics with superior power-handling capabilities. Here, we report the first realization of highly coherent electronic quantum interference and resonant tunneling injection in wide-bandgap triple-barrier heterostructures. Enabled by the high structural quality of the GaN/AlN triple-barrier active region, we observe multiple resonant tunneling peaks and negative differential conductance at room temperature. The robustness of the inter-well resonant tunneling current is experimentally confirmed via temperature-dependent electronic transport and the generation of electrically tunable microwave oscillations. These results represent a stepping stone in the engineering of intersubband tunneling transport in wide-bandgap III-nitride semiconductors, raising hopes for the realization of intersubband optical amplification and frequency-modulated resonant tunneling oscillators.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"27 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147393394","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
One-transistor-one-memristor (1T1R) structures are essential for large-scale memristor arrays, as they enable precise read and write operations for individual cells. Currently, most 1T1R designs employ planar field-effect transistors with laterally arranged source, drain, and channel, which limit the achievable array density within a planar layout. Here, we demonstrate a compact, vertically integrated 1T1R cell by stacking a MoS2 vertical field-effect transistor (VFET) with a HfO2 memristor. The VFET channel achieves a footprint of only 10 µm2, which reduces reliance on advanced lithography and enables a reduced 1T1R cell area compared with some reported standard 0.18 µm silicon-based 1T1R implementations. The cell exhibits highly uniform resistive switching, with coefficients of variation (Cv) of only 3.4% in the high-resistance state (HRS) and 6.2% in the low-resistance state (LRS). Furthermore, it achieves quasi-linear conductance modulation across six discrete levels via VFET gate control. This demonstration establishes a scalable, area-efficient platform for 3D in-memory computing and neuromorphic structures.
{"title":"Monolithic Co-Integration of Vertical FET and Memristor for 1T1R Cell","authors":"Fubo Jiao, Weiqi Dang, Gong-Jie Ruan, Jiameng Sun, Xiaoyu Sun, Dehe Kong, Yinzhi Huang, Yuxuan Yuan, Qin Liu, Sicheng Chen, Long Zhao, Cong Wang, Pengfei Wang, Chen Pan, Yajun Fu, Shi-Jun Liang","doi":"10.1002/aelm.202500742","DOIUrl":"https://doi.org/10.1002/aelm.202500742","url":null,"abstract":"One-transistor-one-memristor (1T1R) structures are essential for large-scale memristor arrays, as they enable precise read and write operations for individual cells. Currently, most 1T1R designs employ planar field-effect transistors with laterally arranged source, drain, and channel, which limit the achievable array density within a planar layout. Here, we demonstrate a compact, vertically integrated 1T1R cell by stacking a MoS<sub>2</sub> vertical field-effect transistor (VFET) with a HfO<sub>2</sub> memristor. The VFET channel achieves a footprint of only 10 µm<sup>2</sup>, which reduces reliance on advanced lithography and enables a reduced 1T1R cell area compared with some reported standard 0.18 µm silicon-based 1T1R implementations. The cell exhibits highly uniform resistive switching, with coefficients of variation (<i>C</i><sub>v</sub>) of only 3.4% in the high-resistance state (HRS) and 6.2% in the low-resistance state (LRS). Furthermore, it achieves quasi-linear conductance modulation across six discrete levels via VFET gate control. This demonstration establishes a scalable, area-efficient platform for 3D in-memory computing and neuromorphic structures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"9 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147440149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Oil movement control is crucial for optimizing the optical performance of electrowetting display (EWD) devices. Herein, an open inducing structure (OIS) is introduced, which is directly formed by photoembossing of dielectric layer materials into EWD pixels, aiming to regulate oil dynamics by inducing local electric field inhomogeneity. The OIS is designed with a frustum‐shaped profile, circumventing secondary processing requirements and abrupt aperture ratio changes associated with traditional cylindrical notch structures. Optimal height of OIS is in the range of 10%–30% of the pixel wall height. Utilizing photoembossing combined with predefined mask patterns enables precise control of the structure's position, quantity, and height. Experimental results demonstrate that this OIS effectively reduces the oil aperture voltage, guides directional oil movement, and enhances the device's optoelectronic performance without compromising the aperture ratio. This study provides a versatile and scalable oil control strategy for EWD devices, offering broad device compatibility.
{"title":"Achieving Directional Oil Manipulation by Open Inducing Structure for Electrowetting Displays","authors":"Qilu Li, Yuxin You, Tinghong Yang, Simin Ma, Wenzhen Chen, Yuhuai Yang, Guofu Zhou, Jiawei Lai, Dong Yuan","doi":"10.1002/aelm.202500843","DOIUrl":"https://doi.org/10.1002/aelm.202500843","url":null,"abstract":"Oil movement control is crucial for optimizing the optical performance of electrowetting display (EWD) devices. Herein, an open inducing structure (OIS) is introduced, which is directly formed by photoembossing of dielectric layer materials into EWD pixels, aiming to regulate oil dynamics by inducing local electric field inhomogeneity. The OIS is designed with a frustum‐shaped profile, circumventing secondary processing requirements and abrupt aperture ratio changes associated with traditional cylindrical notch structures. Optimal height of OIS is in the range of 10%–30% of the pixel wall height. Utilizing photoembossing combined with predefined mask patterns enables precise control of the structure's position, quantity, and height. Experimental results demonstrate that this OIS effectively reduces the oil aperture voltage, guides directional oil movement, and enhances the device's optoelectronic performance without compromising the aperture ratio. This study provides a versatile and scalable oil control strategy for EWD devices, offering broad device compatibility.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147374234","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"High‐Performance and Energy‐Efficient Sub‐5 nm 2D Double‐Gate MOSFETs Based on Silicon Arsenide Monolayers (Adv. Electron. Mater. 5/2026)","authors":"Dogukan Hazar Ozbey, Engin Durgun","doi":"10.1002/aelm.70300","DOIUrl":"https://doi.org/10.1002/aelm.70300","url":null,"abstract":"","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"16 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147373823","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Thomas Neuner, Jaimin Kang, Jordan Athas, Christian Duffee, Noraica Davila Melendez, Jordan A. Katine, Pedram Khalili Amiri
Physical unclonable functions (PUFs) leverage intrinsic stochastic variations of physical properties to generate secure cryptographic keys. Magnetic random-access memory (MRAM) is a strong candidate for PUF implementations due to its high density, reliability, and complementary-metal-oxide-semiconductor (CMOS) compatibility. However, MRAM-PUFs reported to date remain vulnerable to adversarial attacks such as side-channel analysis, highlighting the need for effective concealment strategies. Here, a concealable PUF based on an array of 384 nanoscale perpendicular voltage-controlled magnetic tunnel junctions (V-MTJs) is demonstrated. The PUF uses a combination of deterministic and stochastic switching mechanisms for its operation. Variations in the spin transfer torque (STT)-assisted switching voltage generate unique PUF responses, which are concealed through voltage-controlled magnetic anisotropy (VCMA)-induced stochastic switching. Once concealed, it is shown that the PUF responses can be reliably recovered by STT-assisted deterministic switching. The proposed PUF is magnetic-field-free, reliable, and CMOS-compatible, while exhibiting near-ideal entropy (0.98) and inter-Hamming distance (0.508). These results establish a pathway toward secure, scalable MRAM-PUFs for future hardware security applications.
{"title":"Concealable and Field-Free Physical Unclonable Function Based on Voltage-Controlled Magnetic Tunnel Junctions","authors":"Thomas Neuner, Jaimin Kang, Jordan Athas, Christian Duffee, Noraica Davila Melendez, Jordan A. Katine, Pedram Khalili Amiri","doi":"10.1002/aelm.202500814","DOIUrl":"https://doi.org/10.1002/aelm.202500814","url":null,"abstract":"Physical unclonable functions (PUFs) leverage intrinsic stochastic variations of physical properties to generate secure cryptographic keys. Magnetic random-access memory (MRAM) is a strong candidate for PUF implementations due to its high density, reliability, and complementary-metal-oxide-semiconductor (CMOS) compatibility. However, MRAM-PUFs reported to date remain vulnerable to adversarial attacks such as side-channel analysis, highlighting the need for effective concealment strategies. Here, a concealable PUF based on an array of 384 nanoscale perpendicular voltage-controlled magnetic tunnel junctions (V-MTJs) is demonstrated. The PUF uses a combination of deterministic and stochastic switching mechanisms for its operation. Variations in the spin transfer torque (STT)-assisted switching voltage generate unique PUF responses, which are concealed through voltage-controlled magnetic anisotropy (VCMA)-induced stochastic switching. Once concealed, it is shown that the PUF responses can be reliably recovered by STT-assisted deterministic switching. The proposed PUF is magnetic-field-free, reliable, and CMOS-compatible, while exhibiting near-ideal entropy (0.98) and inter-Hamming distance (0.508). These results establish a pathway toward secure, scalable MRAM-PUFs for future hardware security applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"6 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147368566","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shouzhuo Yang, David Lehninger, Markus Neuber, Amir Pourjafar, Yannick Raffel, Ayse Sünbül, Anant Rastogi, Peter Reinig, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer
Fluorite structure ferroelectrics, especially hafnium oxide, are widely investigated for their application in non-volatile memories, sensors, actuators, RF devices, and energy harvesters. Due to the metastable nature of the ferroelectric phase in these materials, dopants, and process parameters need to be optimized for its stabilization. Here, we present clear evidence of how dopants affect the properties in this material system and solutions to achieve improved reliability, desired crystallization behavior, and polarization hysteresis shape/position through co-doping. Finally, the benefits of co-doping in a variety of application fields are demonstrated. This study provides a comprehensive ‘co-doping toolkit’ for tailoring fluorite-structure ferroelectrics to meet specific application requirements.
{"title":"Performance Enhancement in Hafnium Oxide Through Homogeneous and Heterogeneous co-Doping Strategies","authors":"Shouzhuo Yang, David Lehninger, Markus Neuber, Amir Pourjafar, Yannick Raffel, Ayse Sünbül, Anant Rastogi, Peter Reinig, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer","doi":"10.1002/aelm.202500764","DOIUrl":"https://doi.org/10.1002/aelm.202500764","url":null,"abstract":"Fluorite structure ferroelectrics, especially hafnium oxide, are widely investigated for their application in non-volatile memories, sensors, actuators, RF devices, and energy harvesters. Due to the metastable nature of the ferroelectric phase in these materials, dopants, and process parameters need to be optimized for its stabilization. Here, we present clear evidence of how dopants affect the properties in this material system and solutions to achieve improved reliability, desired crystallization behavior, and polarization hysteresis shape/position through co-doping. Finally, the benefits of co-doping in a variety of application fields are demonstrated. This study provides a comprehensive ‘co-doping toolkit’ for tailoring fluorite-structure ferroelectrics to meet specific application requirements.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147360284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias-resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton-trion balance while devices operate under electrical stress. Monolayer channels display strong gate control of carrier concentration and low hysteresis. In contrast, bilayer regions exhibit tensile strain with weaker carrier modulation. Twisted bilayers, especially at grain boundaries with monolayer domains, develop compressive strain and a widened excitonic gap that establishes a space-charge region at the <span data-altimg="/cms/asset/638e9868-3a65-403d-bb04-cf2e0920333f/aelm70317-math-0001.png"></span><mjx-container ctxtmenu_counter="605" ctxtmenu_oldtabindex="1" jax="CHTML" role="application" sre-explorer- style="font-size: 103%; position: relative;" tabindex="0"><mjx-math aria-hidden="true" location="graphic/aelm70317-math-0001.png"><mjx-semantics><mjx-msup data-semantic-children="0,1" data-semantic- data-semantic-role="unknown" data-semantic-speech="1 upper L slash 2 upper L Superscript t w i s t" data-semantic-type="superscript"><mjx-mtext data-semantic-annotation="clearspeak:unit" data-semantic-font="normal" data-semantic- data-semantic-parent="2" data-semantic-role="unknown" data-semantic-type="text"><mjx-c></mjx-c><mjx-c></mjx-c><mjx-c></mjx-c><mjx-c></mjx-c><mjx-c></mjx-c></mjx-mtext><mjx-script style="vertical-align: 0.477em;"><mjx-mi data-semantic-font="normal" data-semantic- data-semantic-parent="2" data-semantic-role="unknown" data-semantic-type="identifier" size="s"><mjx-c></mjx-c><mjx-c></mjx-c><mjx-c></mjx-c><mjx-c></mjx-c><mjx-c></mjx-c></mjx-mi></mjx-script></mjx-msup></mjx-semantics></mjx-math><mjx-assistive-mml display="inline" unselectable="on"><math altimg="urn:x-wiley:2199160X:media:aelm70317:aelm70317-math-0001" display="inline" location="graphic/aelm70317-math-0001.png" xmlns="http://www.w3.org/1998/Math/MathML"><semantics><msup data-semantic-="" data-semantic-children="0,1" data-semantic-role="unknown" data-semantic-speech="1 upper L slash 2 upper L Superscript t w i s t" data-semantic-type="superscript"><mtext data-semantic-="" data-semantic-annotation="clearspeak:unit" data-semantic-font="normal" data-semantic-parent="2" data-semantic-role="unknown" data-semantic-type="text">1L/2L</mtext><mi data-semantic-="" data-semantic-font="normal" data-semantic-parent="2" data-semantic-role="unknown" data-semantic-type="identifier">twist</mi></msup>$text{1L/2L}^{mathrm{twist}}$</annotation></semantics></math></mjx-assistive-mml></mjx-container> interface. This interfacial space charge correlates with enhanced electrical hysteresis and with a distinct optoelectronic signature: photocurrent follows <span data-altimg="/cms/asset/475f0f24-babb-4f2c-b52a-aadf6ca5913d/aelm70317-math-0002.png"></span><mjx
{"title":"Twisted MoS2 Bilayers as Functional Elements in Memtransistors: Hysteresis, Optical Signatures, and Photocurrent Kinetics","authors":"Vladislav Kurtash, Ilya Eliseyev, Valery Davydov, Heiko O. Jacobs, Jörg Pezoldt","doi":"10.1002/aelm.202500716","DOIUrl":"https://doi.org/10.1002/aelm.202500716","url":null,"abstract":"Layered 2D materials are considered as promising for memristive applications due to their ultimate vertical scalability compared to conventional semiconductor films and pronounced hysteresis properties. Bias-resolved Raman and Photoluminescence mapping is used to quantify strain from phonon shifts and carrier density from the exciton-trion balance while devices operate under electrical stress. Monolayer channels display strong gate control of carrier concentration and low hysteresis. In contrast, bilayer regions exhibit tensile strain with weaker carrier modulation. Twisted bilayers, especially at grain boundaries with monolayer domains, develop compressive strain and a widened excitonic gap that establishes a space-charge region at the <span data-altimg=\"/cms/asset/638e9868-3a65-403d-bb04-cf2e0920333f/aelm70317-math-0001.png\"></span><mjx-container ctxtmenu_counter=\"605\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"><mjx-math aria-hidden=\"true\" location=\"graphic/aelm70317-math-0001.png\"><mjx-semantics><mjx-msup data-semantic-children=\"0,1\" data-semantic- data-semantic-role=\"unknown\" data-semantic-speech=\"1 upper L slash 2 upper L Superscript t w i s t\" data-semantic-type=\"superscript\"><mjx-mtext data-semantic-annotation=\"clearspeak:unit\" data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"text\"><mjx-c></mjx-c><mjx-c></mjx-c><mjx-c></mjx-c><mjx-c></mjx-c><mjx-c></mjx-c></mjx-mtext><mjx-script style=\"vertical-align: 0.477em;\"><mjx-mi data-semantic-font=\"normal\" data-semantic- data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"identifier\" size=\"s\"><mjx-c></mjx-c><mjx-c></mjx-c><mjx-c></mjx-c><mjx-c></mjx-c><mjx-c></mjx-c></mjx-mi></mjx-script></mjx-msup></mjx-semantics></mjx-math><mjx-assistive-mml display=\"inline\" unselectable=\"on\"><math altimg=\"urn:x-wiley:2199160X:media:aelm70317:aelm70317-math-0001\" display=\"inline\" location=\"graphic/aelm70317-math-0001.png\" xmlns=\"http://www.w3.org/1998/Math/MathML\"><semantics><msup data-semantic-=\"\" data-semantic-children=\"0,1\" data-semantic-role=\"unknown\" data-semantic-speech=\"1 upper L slash 2 upper L Superscript t w i s t\" data-semantic-type=\"superscript\"><mtext data-semantic-=\"\" data-semantic-annotation=\"clearspeak:unit\" data-semantic-font=\"normal\" data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"text\">1L/2L</mtext><mi data-semantic-=\"\" data-semantic-font=\"normal\" data-semantic-parent=\"2\" data-semantic-role=\"unknown\" data-semantic-type=\"identifier\">twist</mi></msup>$text{1L/2L}^{mathrm{twist}}$</annotation></semantics></math></mjx-assistive-mml></mjx-container> interface. This interfacial space charge correlates with enhanced electrical hysteresis and with a distinct optoelectronic signature: photocurrent follows <span data-altimg=\"/cms/asset/475f0f24-babb-4f2c-b52a-aadf6ca5913d/aelm70317-math-0002.png\"></span><mjx","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"38 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147329780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ao Li, Zhenxiang Xiong, Wenao Ye, Dejin Yan, Xiaoming Chen, Chenglin Yi
The interfacial properties between substrate and ink play a crucial role in the performance of aerosol jet (AJ) printed electronics. This study proposes a simple and effective in situ electrostatic-assisted wetting method, which controls the deposition of negative charges onto the substrate to adjust wettability and optimize interfacial strength. The electrostatic charging-assisted wetting device is integrated into the AJ printing system to achieve in situ negative charge deposition. The results demonstrate significantly improved ink wettability on a negatively charged substrate. The interfacial shear strength (IFSS) of electrostatically treated carbon fiber reinforced polymer and glass fiber reinforced polymer with epoxy acrylate (EA) ink increases by 85.6% and 51.7%. Concurrently, enhancements in IFSS of 19.8% and 15.3% were achieved for the glass/ silver nanoparticle (AgNP) ink and EA ink/AgNP ink, respectively. Molecular dynamics (MD) simulations of EA ink wetting on SiO2 substrate confirm that interfacial enhancement primarily originates from ink penetration into the surface's grooves via electrostatic attraction, establishing a conformal interface. The proposed electrostatic-assisted wetting method is a facile and cost-effective strategy providing effective interfacial enhancement for AJ printed electronics.
{"title":"In Situ Electrostatic Charge-Assisted Wetting for Enhancing Interfacial Strength of Printed Electronics","authors":"Ao Li, Zhenxiang Xiong, Wenao Ye, Dejin Yan, Xiaoming Chen, Chenglin Yi","doi":"10.1002/aelm.202500700","DOIUrl":"https://doi.org/10.1002/aelm.202500700","url":null,"abstract":"The interfacial properties between substrate and ink play a crucial role in the performance of aerosol jet (AJ) printed electronics. This study proposes a simple and effective in situ electrostatic-assisted wetting method, which controls the deposition of negative charges onto the substrate to adjust wettability and optimize interfacial strength. The electrostatic charging-assisted wetting device is integrated into the AJ printing system to achieve in situ negative charge deposition. The results demonstrate significantly improved ink wettability on a negatively charged substrate. The interfacial shear strength (IFSS) of electrostatically treated carbon fiber reinforced polymer and glass fiber reinforced polymer with epoxy acrylate (EA) ink increases by 85.6% and 51.7%. Concurrently, enhancements in IFSS of 19.8% and 15.3% were achieved for the glass/ silver nanoparticle (AgNP) ink and EA ink/AgNP ink, respectively. Molecular dynamics (MD) simulations of EA ink wetting on SiO<sub>2</sub> substrate confirm that interfacial enhancement primarily originates from ink penetration into the surface's grooves via electrostatic attraction, establishing a conformal interface. The proposed electrostatic-assisted wetting method is a facile and cost-effective strategy providing effective interfacial enhancement for AJ printed electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"529 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147329782","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Soo Min Yoo, Seungwoo Lee, Chaeyeong Hwang, Woojin Jeon
In this study, the molybdenum dioxide (MoO2) as a promising electrode material for next-generation semiconductor memory devices is investigated. A pre-reduction agent is introduced into the MoO2 atomic layer deposition (ALD) process to prevent surface morphology degradation occurring during crystallization. The chemical changes in MoO2 thin films upon the application of the pre-reduction agent are analyzed, thereby elucidating the role of the pre-reduction agent in MoO2 ALD. With the use of the pre-reduction agent, the Mo6+ corresponding to molybdenum trioxide (MoO3) decreased, while that of Mo5+ corresponding to MoOx (2 < x < 3) increases in the as-deposited state. Accordingly, the MoOx thin film is partially reduced in the as-deposited state, suppressing surface morphology degradation during the annealing process. The improved surface morphology of MoO2, MoO2/TiO2 thin film, enhances the electrical performance of MoO2/TiO2-based metal-insulator-metal (MIM) capacitors. The insights into the role and mechanism of the pre-reduction agent contribute to the development of optimized MoO2/TiO2-based MIM capacitors, providing significant progress toward addressing the challenges and enhancing the performance of next-generation semiconductor memory devices.
本文研究了二氧化钼（MoO2）作为下一代半导体存储器件极材料的应用前景。在MoO2原子层沉积（ALD）过程中引入预还原剂以防止结晶过程中表面形貌的退化。分析了预还原剂应用后MoO2薄膜的化学变化，从而阐明了预还原剂在MoO2 ALD中的作用。随着预还原剂的使用，在沉积态下，三氧化钼（MoO3）对应的Mo6+减少，而MoOx （2 < x < 3）对应的Mo5+增加。因此，MoOx薄膜在沉积状态下部分还原，抑制了退火过程中表面形貌的退化。MoO2/TiO2薄膜表面形貌的改善，提高了MoO2/TiO2基金属-绝缘体-金属（MIM）电容器的电性能。对预还原剂的作用和机制的深入了解有助于优化MoO2/ tio2基MIM电容器的开发，为解决下一代半导体存储器件的挑战和提高性能提供了重大进展。
{"title":"Improved Molybdenum Dioxide Atomic Layer Deposition Process by Introducing Pre-Reduction Agent","authors":"Soo Min Yoo, Seungwoo Lee, Chaeyeong Hwang, Woojin Jeon","doi":"10.1002/aelm.202500637","DOIUrl":"https://doi.org/10.1002/aelm.202500637","url":null,"abstract":"In this study, the molybdenum dioxide (MoO<sub>2</sub>) as a promising electrode material for next-generation semiconductor memory devices is investigated. A pre-reduction agent is introduced into the MoO<sub>2</sub> atomic layer deposition (ALD) process to prevent surface morphology degradation occurring during crystallization. The chemical changes in MoO<sub>2</sub> thin films upon the application of the pre-reduction agent are analyzed, thereby elucidating the role of the pre-reduction agent in MoO<sub>2</sub> ALD. With the use of the pre-reduction agent, the Mo<sup>6+</sup> corresponding to molybdenum trioxide (MoO<sub>3</sub>) decreased, while that of Mo<sup>5+</sup> corresponding to MoO<i><sub>x</sub></i> (2 < <i>x</i> < 3) increases in the as-deposited state. Accordingly, the MoO<i><sub>x</sub></i> thin film is partially reduced in the as-deposited state, suppressing surface morphology degradation during the annealing process. The improved surface morphology of MoO<sub>2</sub>, MoO<sub>2</sub>/TiO<sub>2</sub> thin film, enhances the electrical performance of MoO<sub>2</sub>/TiO<sub>2</sub>-based metal-insulator-metal (MIM) capacitors. The insights into the role and mechanism of the pre-reduction agent contribute to the development of optimized MoO<sub>2</sub>/TiO<sub>2</sub>-based MIM capacitors, providing significant progress toward addressing the challenges and enhancing the performance of next-generation semiconductor memory devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"200 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147360285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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