New technologies such as autonomous driving, and machine vision keep pushing the photodetectors to acquire a comprehensive high performance including high responsivity, fast response, low detection limit, polarization sensitivity, and broadband photoresponse. 2D van der Waals (vdW) heterostructures have emerged as promising candidates for next-generation photodetectors due to their tailored band alignments and unique physical properties. In this work, a high-performance photodetector based on the Bi2O2Se/Ta2NiSe5 heterojunction, which simultaneously achieves high responsivity (>103 A W−1) and fast response time (≈5 µs) through the tunneling effect is proposed. The heterojunction device exhibits impressive sensitivity with a low detection limit, achieving ≈2 pW at 633 nm and ≈4 nW at 1550 nm. The specific detectivity can reach 3.75 × 1013 Jones at 633 nm and 1.8 × 1010 Jones at 1550 nm. Furthermore, high-resolution broadband and polarized light imaging are successfully demonstrated. These findings provide more opportunities for developing next-generation photodetectors with comprehensive high performance.
{"title":"Bi2O2Se/Ta2NiSe5 Tunneling Heterojunction for High-Performance, Polarization-Sensitive, and Broadband Infrared Photodetector","authors":"Fang Yang, Yuanfang Yu, Xinglei Zhang, Zhihao Qu, Zhaofu Chen, Shizheng Wang, Yinan Wang, Ting Zheng, Weiwei Zhao, Junpeng Lu, Hongwei Liu","doi":"10.1002/aelm.202500115","DOIUrl":"https://doi.org/10.1002/aelm.202500115","url":null,"abstract":"New technologies such as autonomous driving, and machine vision keep pushing the photodetectors to acquire a comprehensive high performance including high responsivity, fast response, low detection limit, polarization sensitivity, and broadband photoresponse. 2D van der Waals (vdW) heterostructures have emerged as promising candidates for next-generation photodetectors due to their tailored band alignments and unique physical properties. In this work, a high-performance photodetector based on the Bi<sub>2</sub>O<sub>2</sub>Se/Ta<sub>2</sub>NiSe<sub>5</sub> heterojunction, which simultaneously achieves high responsivity (>10<sup>3</sup> A W<sup>−1</sup>) and fast response time (≈5 µs) through the tunneling effect is proposed. The heterojunction device exhibits impressive sensitivity with a low detection limit, achieving ≈2 pW at 633 nm and ≈4 nW at 1550 nm. The specific detectivity can reach 3.75 × 10<sup>13</sup> Jones at 633 nm and 1.8 × 10<sup>10</sup> Jones at 1550 nm. Furthermore, high-resolution broadband and polarized light imaging are successfully demonstrated. These findings provide more opportunities for developing next-generation photodetectors with comprehensive high performance.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"74 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832038","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fatme Jardali, Jenny L. Chong, Yeonju Yu, R. Stanley Williams, Suhas Kumar, Patrick J. Shamberger, Timothy D. Brown
Artificial neurons exhibiting volatile threshold switching and action potential-like oscillations are crucial for brain-inspired computing. While Complimentary Metal-Oxide-Semiconductor (CMOS)-based strategies require hundreds of transistors to simulate each neuron, neuronal oscillations arise spontaneously in individual electro-thermal devices due to nonlinearities like the Mott transition in VO2. Despite improved understanding of the physics, quantitative connections between neuronal performance and material properties remain under-explored, preventing predictive neuron design and rational materials selection. In this work, a physics-aware forward design methodology is developed for interrogating a wide palette of materials with properties varying by orders of magnitude, and their performance (high frequency, high dynamical reconfigurability and low power) under external circuit and device geometry constraints is assessed. The space of viable materials is identified to be much larger than previously recognized, with candidates from a range of materials classes, including Ge, GaP and MoS2. CMOS-compatible performance (such as 100 GHz oscillating frequencies) can be achieved with CMOS-compatible node sizes (≈10 nm). Finally, combinations of material properties yielding desired neuronal performance under uncertain design constraints are considered. This work solidifies forward design principles for electro-thermal neuron devices, a necessary pre-condition for inverse design from desired neuronal performance to required materials properties.
{"title":"Materials Selection Principles for Designing Electro-Thermal Neurons","authors":"Fatme Jardali, Jenny L. Chong, Yeonju Yu, R. Stanley Williams, Suhas Kumar, Patrick J. Shamberger, Timothy D. Brown","doi":"10.1002/aelm.202400938","DOIUrl":"https://doi.org/10.1002/aelm.202400938","url":null,"abstract":"Artificial neurons exhibiting volatile threshold switching and action potential-like oscillations are crucial for brain-inspired computing. While Complimentary Metal-Oxide-Semiconductor (CMOS)-based strategies require hundreds of transistors to simulate each neuron, neuronal oscillations arise spontaneously in individual electro-thermal devices due to nonlinearities like the Mott transition in VO<sub>2</sub>. Despite improved understanding of the physics, quantitative connections between neuronal performance and material properties remain under-explored, preventing predictive neuron design and rational materials selection. In this work, a physics-aware forward design methodology is developed for interrogating a wide palette of materials with properties varying by orders of magnitude, and their performance (high frequency, high dynamical reconfigurability and low power) under external circuit and device geometry constraints is assessed. The space of viable materials is identified to be much larger than previously recognized, with candidates from a range of materials classes, including Ge, GaP and MoS<sub>2</sub>. CMOS-compatible performance (such as 100 GHz oscillating frequencies) can be achieved with CMOS-compatible node sizes (≈10 nm). Finally, combinations of material properties yielding desired neuronal performance under uncertain design constraints are considered. This work solidifies forward design principles for electro-thermal neuron devices, a necessary pre-condition for inverse design from desired neuronal performance to required materials properties.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"108 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832035","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
David Neusser, Xiuming Sun, Sushri Soumya Jena, Wen Liang Tan, Lars Thomsen, Christopher R. McNeill, Sarbani Ghosh, Igor Zozoulenko, Sabine Ludwigs
Electrochemical doping of thin films of poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (P(NDI2OD-T2)) is shown as straightforward method to achieve different degrees of doping both during in situ electrochemical experiments as well as in the solid state. Results obtained from cyclic voltammetry and absorption spectroscopy upon reduction can be explained by the presence of the neutral state as well as polaron and bipolaron species, including neutral/polaron and polaron/bipolaron mixed valence states. The UV-vis-NIR spectra are analyzed and explained based on the calculated electronic structure and the corresponding transitions between different states, this includes features such as numbers and positions of the peaks and their evolution during reduction. Most intruingly, doped films are stable after transfer in the solid state, as evidenced by absorption spectroscopy. Conductivity measurements of films with different degrees of doping show a bell-shaped conductivity profile, which underlines the classification of P(NDI2OD-T2) as a conjugated redox polymer with mixed valence transport. Maximum conductivities of up to 2 × 10−4 S cm−1 are obtained at intermediate doping levels under the coexistence of neutral state and polarons. Conductivity measurements of blade-coated films point to anisotropic charge transport with the highest charge transport along the blade /polymer chain direction and an anisotropic conductivity ratio of 4.1.
{"title":"Electrochemical Doping for Absorption and Conductivity Tuning of P(NDI2OD-T2) Films","authors":"David Neusser, Xiuming Sun, Sushri Soumya Jena, Wen Liang Tan, Lars Thomsen, Christopher R. McNeill, Sarbani Ghosh, Igor Zozoulenko, Sabine Ludwigs","doi":"10.1002/aelm.202400956","DOIUrl":"https://doi.org/10.1002/aelm.202400956","url":null,"abstract":"Electrochemical doping of thin films of poly{[N,N′-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5′-(2,2′-bithiophene)} (P(NDI2OD-T2)) is shown as straightforward method to achieve different degrees of doping both during in situ electrochemical experiments as well as in the solid state. Results obtained from cyclic voltammetry and absorption spectroscopy upon reduction can be explained by the presence of the neutral state as well as polaron and bipolaron species, including neutral/polaron and polaron/bipolaron mixed valence states. The UV-vis-NIR spectra are analyzed and explained based on the calculated electronic structure and the corresponding transitions between different states, this includes features such as numbers and positions of the peaks and their evolution during reduction. Most intruingly, doped films are stable after transfer in the solid state, as evidenced by absorption spectroscopy. Conductivity measurements of films with different degrees of doping show a bell-shaped conductivity profile, which underlines the classification of P(NDI2OD-T2) as a conjugated redox polymer with mixed valence transport. Maximum conductivities of up to 2 × 10<sup>−4</sup> S cm<sup>−1</sup> are obtained at intermediate doping levels under the coexistence of neutral state and polarons. Conductivity measurements of blade-coated films point to anisotropic charge transport with the highest charge transport along the blade /polymer chain direction and an anisotropic conductivity ratio of 4.1.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"7 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832104","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Bin Geng, Hongli Xin, Xin Cui, Tielei Song, Zhifeng Liu
Using first-principles calculations, an intriguing 2D topological insulator (TI), fluorinated β-BiSb monolayer (BiSbF2 ML) is identified, which not only harbors topologically protected gapless edge states, but also contains spin-split bulk states with opposite Berry curvature and spin moment in inequivalent valleys. Specifically, its topological edge states reside in a sizable bulk gap of up to 252 meV, sufficiently large for realizing room-temperature quantum spin Hall effect. For its bulk states, there exist giant spin-orbit induced spin-splittings in both the uppermost valence band (390 meV) and the lowermost conduction band (478 meV) due to the breaking of inversion symmetry. In particular, both of the spin-splitting and the bulk gap can be linearly tuned by external strains from −5% to 5% in a considerable energy window of about 100 meV. Moreover, the intrinsic electronic structure of BiSbF2 ML near the Fermi level can be well preserved in the substrate-supported BiSbF2 ML. The results establish a new 2D inversion asymmetric TI with distinguished bulk state, which provides an ideal platform for exploring the combined effects among spintronics, valleytronics, and topological physics.
{"title":"BiSbF2 Monolayer: A 2D Inversion-Asymmetric Topological Insulator With Linearly Tunable Giant Spin-Splitting and Bulk Gap","authors":"Bin Geng, Hongli Xin, Xin Cui, Tielei Song, Zhifeng Liu","doi":"10.1002/aelm.202400996","DOIUrl":"https://doi.org/10.1002/aelm.202400996","url":null,"abstract":"Using first-principles calculations, an intriguing 2D topological insulator (TI), fluorinated β-BiSb monolayer (BiSbF<sub>2</sub> ML) is identified, which not only harbors topologically protected gapless edge states, but also contains spin-split bulk states with opposite Berry curvature and spin moment in inequivalent valleys. Specifically, its topological edge states reside in a sizable bulk gap of up to 252 meV, sufficiently large for realizing room-temperature quantum spin Hall effect. For its bulk states, there exist giant spin-orbit induced spin-splittings in both the uppermost valence band (390 meV) and the lowermost conduction band (478 meV) due to the breaking of inversion symmetry. In particular, both of the spin-splitting and the bulk gap can be linearly tuned by external strains from −5% to 5% in a considerable energy window of about 100 meV. Moreover, the intrinsic electronic structure of BiSbF<sub>2</sub> ML near the Fermi level can be well preserved in the substrate-supported BiSbF<sub>2</sub> ML. The results establish a new 2D inversion asymmetric TI with distinguished bulk state, which provides an ideal platform for exploring the combined effects among spintronics, valleytronics, and topological physics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Stefano Ippolito, Francesca Urban, Paolo Samorì, Jonathan E. Spanier, Yury Gogotsi
MXenes represent one-of-a-kind materials to devise radically novel technologies and achieve breakthroughs in optoelectronics. To exploit their full potential, precise control over the influence of stoichiometry on optical and thermal properties, as well as device performance, must be achieved. Here, the characteristics of optoelectronic devices based on Ti3C2Tx and Ti2CTx thin films are uncovered, highlighting the striking difference in their photothermal responses to laser irradiation under different experimental conditions. Even though their absorption coefficients at 450 nm are comparable, the thermal excitation and relaxation phenomena display markedly different kinetics: Ti2CTx devices show a strong asymmetry during the heating-cooling cycle, with the heat dissipation kinetics being three orders of magnitude slower than Ti3C2Tx and strongly influenced by environmental conditions. The findings are expected to stimulate fundamental investigations into the photothermal response of MXenes and open exciting prospects for their use in printed and wearable optoelectronics, including memory devices and neuromorphic computing.
{"title":"Exotic Photothermal Response in Ti-Based MXene Optoelectronic Devices","authors":"Stefano Ippolito, Francesca Urban, Paolo Samorì, Jonathan E. Spanier, Yury Gogotsi","doi":"10.1002/aelm.202500017","DOIUrl":"https://doi.org/10.1002/aelm.202500017","url":null,"abstract":"MXenes represent one-of-a-kind materials to devise radically novel technologies and achieve breakthroughs in optoelectronics. To exploit their full potential, precise control over the influence of stoichiometry on optical and thermal properties, as well as device performance, must be achieved. Here, the characteristics of optoelectronic devices based on Ti<sub>3</sub>C<sub>2</sub>T<i><sub>x</sub></i> and Ti<sub>2</sub>CT<i><sub>x</sub></i> thin films are uncovered, highlighting the striking difference in their photothermal responses to laser irradiation under different experimental conditions. Even though their absorption coefficients at 450 nm are comparable, the thermal excitation and relaxation phenomena display markedly different kinetics: Ti<sub>2</sub>CT<i><sub>x</sub></i> devices show a strong asymmetry during the heating-cooling cycle, with the heat dissipation kinetics being three orders of magnitude slower than Ti<sub>3</sub>C<sub>2</sub>T<i><sub>x</sub></i> and strongly influenced by environmental conditions. The findings are expected to stimulate fundamental investigations into the photothermal response of MXenes and open exciting prospects for their use in printed and wearable optoelectronics, including memory devices and neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"299 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143832063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ciro Allarà, Antonio Orlando, Giuseppe Ciccone, Soufiane Krik, Michele Pompilio, Andrea Pedrielli, Andrea Gaiardo, Paolo Lugli, Luisa Petti, Franco Cacialli, Manuela Ciocca
Biophotonics has gained significant interest in recent years due to its potential in medical theranostic applications, with nano‐materials emerging as key enablers for advancing optical and electronic functionalities in biological environments. In this study, conjugated polymer nanoparticles (CP‐NPs), namely regio‐regular poly(3‐hexylthiophene) (P3HT), [6,6]‐phenyl C61‐butyric acid methyl ester (PCBM), and their blend (P3HT:PCBM), are exploited as nano‐materials for biophotonic applications. The CP‐NPs, obtained via a nanoprecipitation method, showed an average size of ca. 180 nm. Their optoelectrical properties indicate visible absorbance (350–600 nm) and red/near infra‐red (NIR, 650–900 nm) emission, demonstrating their suitability for biophotonic applications, in particular in biohybrid interfaces where effective light absorption and emission in biological environments are crucial. Interestingly, under light stimulation, the photocurrent response of the CP‐NPs in electrolyte solution (phosphate‐buffered saline, PBS) showed a stable and reproducible signal (current density ranging from 0.18 to 7 nA cm−2) thereby enhancing their potential for bio‐sensing/stimulation. Simulations of CP‐NPs interactions with biological fluids (i.e., PBS) under light stimulation showed distinct carrier generation and transport behaviors, with P3HT‐NPs exhibiting consistent charge generation (up to 3 × 1020 nA cm−3). These findings demonstrate that CP‐NPs are promising for biophotonic applications, such as photothermal therapy, due to their efficient charge transport, UV‐vis absorption, NIR emission, and controlled interactions with biological environments.
{"title":"Conjugated Polymer Nanoparticles for Biophotonic Applications: Preparation, Characterization, and Simulation in Biohybrid Interfaces","authors":"Ciro Allarà, Antonio Orlando, Giuseppe Ciccone, Soufiane Krik, Michele Pompilio, Andrea Pedrielli, Andrea Gaiardo, Paolo Lugli, Luisa Petti, Franco Cacialli, Manuela Ciocca","doi":"10.1002/aelm.202500073","DOIUrl":"https://doi.org/10.1002/aelm.202500073","url":null,"abstract":"Biophotonics has gained significant interest in recent years due to its potential in medical theranostic applications, with nano‐materials emerging as key enablers for advancing optical and electronic functionalities in biological environments. In this study, conjugated polymer nanoparticles (CP‐NPs), namely regio‐regular poly(3‐hexylthiophene) (P3HT), [6,6]‐phenyl C61‐butyric acid methyl ester (PCBM), and their blend (P3HT:PCBM), are exploited as nano‐materials for biophotonic applications. The CP‐NPs, obtained via a nanoprecipitation method, showed an average size of ca. 180 nm. Their optoelectrical properties indicate visible absorbance (350–600 nm) and red/near infra‐red (NIR, 650–900 nm) emission, demonstrating their suitability for biophotonic applications, in particular in biohybrid interfaces where effective light absorption and emission in biological environments are crucial. Interestingly, under light stimulation, the photocurrent response of the CP‐NPs in electrolyte solution (phosphate‐buffered saline, PBS) showed a stable and reproducible signal (current density ranging from 0.18 to 7 nA cm<jats:sup>−2</jats:sup>) thereby enhancing their potential for bio‐sensing/stimulation. Simulations of CP‐NPs interactions with biological fluids (i.e., PBS) under light stimulation showed distinct carrier generation and transport behaviors, with P3HT‐NPs exhibiting consistent charge generation (up to 3 × 10<jats:sup>20</jats:sup> nA cm<jats:sup>−3</jats:sup>). These findings demonstrate that CP‐NPs are promising for biophotonic applications, such as photothermal therapy, due to their efficient charge transport, UV‐vis absorption, NIR emission, and controlled interactions with biological environments.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"39 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143813882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Heterojunction-gated (HG) phototransistors have shown exceptional performance in weak-light infrared detection due to their internal gain mechanism and the opto-electric decoupling design. However, huge room is remained on optimizing device structure to further improve the performance, integrated density and yield. In this work, a carbon nanotube (CNT) film-based phototransistor is fabricated with a self-aligned gate consisting of a zinc oxide (ZnO) film/PbS colloidal quantum dot heterojunction. This fabrication process involves a standard lift-off method to form an atomic-layer-deposited dielectric and a self-aligned sputtered ZnO film, which fully covers the CNT network channel to provide the maximum light absorption area. The resulting device demonstrates a high responsivity of 2.9 × 105 A W−1, a specific detectivity of 9.6 × 1013 Jones, and an ultraweak detectable intensity of 0.8 nW cm−2 at 1300 nm illumination, all at room temperature. The self-aligned HG phototransistor presents infrared photodetection performance comparable to non-self-aligned one, which typically require electron-beam lithography or high-precision lithography. This study can be insightful in developing high-performance, easily manufacturable CNT-based infrared detectors and high-resolution imaging applications.
{"title":"Self-Aligned Heterojunction Gate Carbon Nanotube Phototransistors for Highly Sensitive Infrared Detection","authors":"Jingjing Ge, Xiaolu Xia, Maguang Zhu, Shaoyuan Zhou, Yifu Sun, Hangqi Ma, Xinyue Pei, Dijie Zhang, Ying Wang, Zhiyong Zhang","doi":"10.1002/aelm.202400966","DOIUrl":"https://doi.org/10.1002/aelm.202400966","url":null,"abstract":"Heterojunction-gated (HG) phototransistors have shown exceptional performance in weak-light infrared detection due to their internal gain mechanism and the opto-electric decoupling design. However, huge room is remained on optimizing device structure to further improve the performance, integrated density and yield. In this work, a carbon nanotube (CNT) film-based phototransistor is fabricated with a self-aligned gate consisting of a zinc oxide (ZnO) film/PbS colloidal quantum dot heterojunction. This fabrication process involves a standard lift-off method to form an atomic-layer-deposited dielectric and a self-aligned sputtered ZnO film, which fully covers the CNT network channel to provide the maximum light absorption area. The resulting device demonstrates a high responsivity of 2.9 × 10<sup>5</sup> A W<sup>−1</sup>, a specific detectivity of 9.6 × 10<sup>13</sup> Jones, and an ultraweak detectable intensity of 0.8 nW cm<sup>−2</sup> at 1300 nm illumination, all at room temperature. The self-aligned HG phototransistor presents infrared photodetection performance comparable to non-self-aligned one, which typically require electron-beam lithography or high-precision lithography. This study can be insightful in developing high-performance, easily manufacturable CNT-based infrared detectors and high-resolution imaging applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"195 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143814016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The molecular floating-gate transistor memories are fabricated by a simple spinning-coating method using a small-molecule material spiro[fluorene-9,7′-dibenzo[c,h]acridine]-5′-one (SFDBAO) as the trapping element. The molecule with donor–acceptor (D–A) structures contains naphthylamine and quinone-like structures, which can serve as trapping sites for hole and electron integration. Combined with the steric hindrance effect of the molecule itself, the pentacene (PEN)-based transistor memory device with solution-processed SFDBAO shows excellent charge-trapping ability, including high hole trapping efficiency (3.43 × 1013 cm−2 V−1 s−1), fast programming speed (≈1 ms), and ambipolar memory behavior with a large memory window (74.3 V). The optimized device based on the SFDBAO@polystyrene (SFDBAO@PS = 5:1) film exhibits reliable endurance characteristic (>103 cycles) and good charge retention (>2 × 104 s). These results suggest that the high-performance ambipolar OFET memory can be achieved through a small-molecule material by rational molecular design.
{"title":"Solution-Processed Sterically Hindered Donor–Acceptor Small Molecules as Molecular Floating-Gates for High-Efficiency Ambipolar Charge Trapping Memory","authors":"Yuyu Liu, Zhen Shao, Yue Li, Jing Liu, Lingzhi Jin, Yiru Wang, Wen Li, Linghai Xie, Haifeng Ling","doi":"10.1002/aelm.202500095","DOIUrl":"https://doi.org/10.1002/aelm.202500095","url":null,"abstract":"The molecular floating-gate transistor memories are fabricated by a simple spinning-coating method using a small-molecule material spiro[fluorene-9,7′-dibenzo[c,h]acridine]-5′-one (SFDBAO) as the trapping element. The molecule with donor–acceptor (D–A) structures contains naphthylamine and quinone-like structures, which can serve as trapping sites for hole and electron integration. Combined with the steric hindrance effect of the molecule itself, the pentacene (PEN)-based transistor memory device with solution-processed SFDBAO shows excellent charge-trapping ability, including high hole trapping efficiency (3.43 × 10<sup>13</sup> cm<sup>−2</sup> V<sup>−1</sup> s<sup>−1</sup>), fast programming speed (≈1 ms), and ambipolar memory behavior with a large memory window (74.3 V). The optimized device based on the SFDBAO@polystyrene (SFDBAO@PS = 5:1) film exhibits reliable endurance characteristic (>10<sup>3</sup> cycles) and good charge retention (>2 × 10<sup>4</sup> s). These results suggest that the high-performance ambipolar OFET memory can be achieved through a small-molecule material by rational molecular design.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"99 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143814018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ji-Eun Yeo, Joo Hwan Ko, Seung Hyeon Lee, Young Min Song
Flexible gas sensing technologies are essential for a wide range of environments and applications, from wearable devices to large-scale industrial systems. Among various approaches, colorimetric sensing stands out for its distinct advantages, including energy-free operation, intuitive visual feedback, and high resistance to environmental disturbances. Leveraging ultrathin resonators, colorimetric sensing achieves enhanced chromaticity and angular stability. In this study, a flexible colorimetric gas sensor is introduced based on a resonator array integrated with polyvinyl alcohol (PVA). This sensor achieves nearly 100% coverage of the standard RGB color gamut, enabling precise and visually distinguishable gas detection. Fabricated on a flexible substrate, it demonstrates remarkable angular robustness, maintaining consistent color under incident light angle variations of up to 60°. This capability, combined with rapid response times of 180 ms for PVA swelling and 210 ms for shrinking, highlights the sensor's adaptability for diverse applications, including wearable devices and industrial-scale monitoring. Furthermore, the sensor is evaluated under various volatile organic compounds (VOCs) and imaging conditions, showcasing its potential for image-based analysis and accurate VOC detection. Notably, it demonstrated the ability to detect VOC concentrations that are indistinguishable using a single sensor by simultaneously analyzing data from four sensor arrays.
{"title":"Wearable Image-Based Colorimetric Sensor for Real-Time Gas Detection with High Chromaticity","authors":"Ji-Eun Yeo, Joo Hwan Ko, Seung Hyeon Lee, Young Min Song","doi":"10.1002/aelm.202400977","DOIUrl":"https://doi.org/10.1002/aelm.202400977","url":null,"abstract":"Flexible gas sensing technologies are essential for a wide range of environments and applications, from wearable devices to large-scale industrial systems. Among various approaches, colorimetric sensing stands out for its distinct advantages, including energy-free operation, intuitive visual feedback, and high resistance to environmental disturbances. Leveraging ultrathin resonators, colorimetric sensing achieves enhanced chromaticity and angular stability. In this study, a flexible colorimetric gas sensor is introduced based on a resonator array integrated with polyvinyl alcohol (PVA). This sensor achieves nearly 100% coverage of the standard RGB color gamut, enabling precise and visually distinguishable gas detection. Fabricated on a flexible substrate, it demonstrates remarkable angular robustness, maintaining consistent color under incident light angle variations of up to 60°. This capability, combined with rapid response times of 180 ms for PVA swelling and 210 ms for shrinking, highlights the sensor's adaptability for diverse applications, including wearable devices and industrial-scale monitoring. Furthermore, the sensor is evaluated under various volatile organic compounds (VOCs) and imaging conditions, showcasing its potential for image-based analysis and accurate VOC detection. Notably, it demonstrated the ability to detect VOC concentrations that are indistinguishable using a single sensor by simultaneously analyzing data from four sensor arrays.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"183 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143814017","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaoxiao Guan, Boxiang Zhang, Yunong Xie, Chuanhong Jin
Semiconducting single-walled carbon nanotube random network thin films (network CNTs) hold promising applications in nanoelectronic devices. However, exposure to electron beam irradiation during characterization and fabrication of network CNTs via tools like scanning electron microscope (SEM) and e-beam lithography (EBL) is often unavoidable and may degrade network CNT field effect transistors (FETs). This study investigates the influences of SEM electron beam irradiation on network CNT FETs, focusing on dose, energy, and dose rate, with the on-state current (Ion) as the primary metric. At lower doses (≤7.2 × 1014 e cm−2), Ion exhibits a temporary reduction, while recovering mostly within 60 min in the ambient environment. At higher doses (>2.9 × 1015 e cm−2), Ion decreases significantly and persistently. The observed phenomena can be attributed to the charging of the SiO2 substrate and defect formation in the SiO2 substrate. The findings provide insights for optimizing electron beam-based techniques in the characterization of network CNT FETs and device fabrication.
半导体单壁碳纳米管随机网络薄膜（网络碳纳米管）在纳米电子器件中具有广阔的应用前景。然而，在通过扫描电子显微镜（SEM）和电子束光刻（EBL）等工具表征和制造网络碳纳米管的过程中，暴露于电子束辐照往往是不可避免的，这可能会降低网络碳纳米管场效应晶体管（FET）的性能。本研究调查了 SEM 电子束辐照对网络 CNT 场效应晶体管的影响，重点关注剂量、能量和剂量率，并以导通电流（离子）为主要指标。在较低剂量（≤7.2 × 1014 e cm-2）下，离子会暂时减少，但在环境中 60 分钟内基本恢复。在较高剂量（2.9 × 1015 e cm-2）下，离子会持续显著减少。观察到的现象可归因于二氧化硅衬底的充电和二氧化硅衬底中缺陷的形成。这些发现为优化基于电子束的网络碳纳米管场效应晶体管表征和器件制造技术提供了启示。
{"title":"Influence of Electron Beam Irradiation on Network Carbon Nanotube Films Based Field Effect Transistors","authors":"Xiaoxiao Guan, Boxiang Zhang, Yunong Xie, Chuanhong Jin","doi":"10.1002/aelm.202500048","DOIUrl":"https://doi.org/10.1002/aelm.202500048","url":null,"abstract":"Semiconducting single-walled carbon nanotube random network thin films (network CNTs) hold promising applications in nanoelectronic devices. However, exposure to electron beam irradiation during characterization and fabrication of network CNTs via tools like scanning electron microscope (SEM) and e-beam lithography (EBL) is often unavoidable and may degrade network CNT field effect transistors (FETs). This study investigates the influences of SEM electron beam irradiation on network CNT FETs, focusing on dose, energy, and dose rate, with the on-state current (<i>I</i><sub>on</sub>) as the primary metric. At lower doses (≤7.2 × 10<sup>14</sup> e cm<sup>−2</sup>), <i>I</i><sub>on</sub> exhibits a temporary reduction, while recovering mostly within 60 min in the ambient environment. At higher doses (>2.9 × 10<sup>15</sup> e cm<sup>−2</sup>), <i>I</i><sub>on</sub> decreases significantly and persistently. The observed phenomena can be attributed to the charging of the SiO<sub>2</sub> substrate and defect formation in the SiO<sub>2</sub> substrate. The findings provide insights for optimizing electron beam-based techniques in the characterization of network CNT FETs and device fabrication.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"66 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143798041","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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