Onur Toprak, Florian Maudet, Markus Wollgarten, Charlotte Van Dijck, Roland Thewes, Veeresh Deshpande, Catherine Dubourdieu
A memristive device is presented based on a Ti/GaOx/W stack with an amorphous GaOx layer deposited at a low temperature (250 °C) using plasma-enhanced atomic layer deposition. The device fabrication is compatible with a standard complementary metal oxide semiconductor back-end-of-line technology. The area dependence of the resistance values for both high and low resistance states indicates that switching takes place over the entire device area via a non-filamentary-based mechanism. Evidence is provided that the switching process originates from a field-driven oxygen exchange between the interfacial TiOx layer and the GaOx one as well as from the charging/discharging of interfacial trap states. The devices reveal self-rectifying characteristics with high cycle-to-cycle reproducibility. Multiple states can be programmed with 12 distinct intermediate states during potentiation, and 11 distinct states during depression. This amorphous GaOx-based memristive device with highly reproducible multi-level resistance states shows great potential for enabling artificial synapses in neuromorphic applications.
{"title":"Amorphous Gallium-Oxide-Based Non-Filamentary Memristive Device with Highly Repeatable Multiple Resistance States","authors":"Onur Toprak, Florian Maudet, Markus Wollgarten, Charlotte Van Dijck, Roland Thewes, Veeresh Deshpande, Catherine Dubourdieu","doi":"10.1002/aelm.202400765","DOIUrl":"https://doi.org/10.1002/aelm.202400765","url":null,"abstract":"A memristive device is presented based on a Ti/GaO<sub>x</sub>/W stack with an amorphous GaO<sub>x</sub> layer deposited at a low temperature (250 °C) using plasma-enhanced atomic layer deposition. The device fabrication is compatible with a standard complementary metal oxide semiconductor back-end-of-line technology. The area dependence of the resistance values for both high and low resistance states indicates that switching takes place over the entire device area via a non-filamentary-based mechanism. Evidence is provided that the switching process originates from a field-driven oxygen exchange between the interfacial TiO<sub>x</sub> layer and the GaO<sub>x</sub> one as well as from the charging/discharging of interfacial trap states. The devices reveal self-rectifying characteristics with high cycle-to-cycle reproducibility. Multiple states can be programmed with 12 distinct intermediate states during potentiation, and 11 distinct states during depression. This amorphous GaO<sub>x</sub>-based memristive device with highly reproducible multi-level resistance states shows great potential for enabling artificial synapses in neuromorphic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong-Wook Kim
The integration of silver nanowire (AgNW) networks with MoS2/ZnO heterojunctions leads to a remarkable enhancement in surface photovoltage (SPV) response. In the visible wavelength range, the heterojunctions with AgNWs achieve an SPV signal of ≈200 mV, a fourfold increase compared to the counterparts without AgNWs (≈50 mV). Wavelength-dependent nanoscopic SPV mapping suggests that this enhancement originates from efficient charge transfer between MoS2 and ZnO. Moreover, the embedded AgNWs raise the local electric potential at the MoS2 surface by several tens of mV, thereby facilitating the collection of photogenerated electrons. Optical calculations reveal that AgNWs concentrate incident light in neighboring layers across a broad wavelength range, further boosting photocarrier generation. These results, along with photoluminescence spectra, suggest that photocarrier transfer at the MoS2/ZnO heterointerfaces is significantly enhanced due to the synergistic effects of light concentration, local potential modifications, and improved electric conduction caused by the AgNW networks.
{"title":"Ag Nanowire-Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer","authors":"Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong-Wook Kim","doi":"10.1002/aelm.202400744","DOIUrl":"https://doi.org/10.1002/aelm.202400744","url":null,"abstract":"The integration of silver nanowire (AgNW) networks with MoS<sub>2</sub>/ZnO heterojunctions leads to a remarkable enhancement in surface photovoltage (SPV) response. In the visible wavelength range, the heterojunctions with AgNWs achieve an SPV signal of ≈200 mV, a fourfold increase compared to the counterparts without AgNWs (≈50 mV). Wavelength-dependent nanoscopic SPV mapping suggests that this enhancement originates from efficient charge transfer between MoS<sub>2</sub> and ZnO. Moreover, the embedded AgNWs raise the local electric potential at the MoS<sub>2</sub> surface by several tens of mV, thereby facilitating the collection of photogenerated electrons. Optical calculations reveal that AgNWs concentrate incident light in neighboring layers across a broad wavelength range, further boosting photocarrier generation. These results, along with photoluminescence spectra, suggest that photocarrier transfer at the MoS<sub>2</sub>/ZnO heterointerfaces is significantly enhanced due to the synergistic effects of light concentration, local potential modifications, and improved electric conduction caused by the AgNW networks.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"183 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jae-Soon Yang, Min-Ho Seo, Min-Seung Jo, Kwang-Wook Choi, Jae-Shin Lee, Myung-Kun Chung, Bon-Jae Koo, Jae-Young Yoo, Jun-Bo Yoon
Flexible pressure sensors have emerged as indispensable components in advancing wearable electronics, healthcare systems, and next-generation human-machine interfaces. To enable these applications, significant progress has been made in improving the sensitivity of flexible pressure sensors. However, achieving bending insensitivity—crucial for reliable pressure detection under dynamic and curved conditions—remains a critical challenge. In this study, a high-performance flexible capacitive pressure sensor is presented that successfully integrates bending insensitivity with enhanced pressure sensitivity. By leveraging the percolation effect within a sub-100 nm nanograting structure, the design of the pressure sensor is optimized through numerical analysis and finite element method (FEM) simulations. Fabricated using a nanoscale wet-chemical digital etching process and nanoimprint lithography, the sensor features a sub-100 nm valley nanograting structure. It exhibits an exceptional sensitivity of 0.05 kPa⁻¹, achieving capacitance changes 4.2 times greater than those of flat substrate designs. Furthermore, the sub-100 nm nanostructured pressure sensor effectively reduces bending strain to 0.175 times that of flat substrates, ensuring stable performance even at a 2.5 mm radius of curvature. This highly reliable flexible pressure sensor array enables real-time pressure mapping and human artery pulse monitoring, making it highly suitable for tactile and wearable sensing applications.
{"title":"Enhanced Percolation Effect in Sub-100 Nm Nanograting Structure for High-Performance Bending Insensitive Flexible Pressure Sensor","authors":"Jae-Soon Yang, Min-Ho Seo, Min-Seung Jo, Kwang-Wook Choi, Jae-Shin Lee, Myung-Kun Chung, Bon-Jae Koo, Jae-Young Yoo, Jun-Bo Yoon","doi":"10.1002/aelm.202400980","DOIUrl":"https://doi.org/10.1002/aelm.202400980","url":null,"abstract":"Flexible pressure sensors have emerged as indispensable components in advancing wearable electronics, healthcare systems, and next-generation human-machine interfaces. To enable these applications, significant progress has been made in improving the sensitivity of flexible pressure sensors. However, achieving bending insensitivity—crucial for reliable pressure detection under dynamic and curved conditions—remains a critical challenge. In this study, a high-performance flexible capacitive pressure sensor is presented that successfully integrates bending insensitivity with enhanced pressure sensitivity. By leveraging the percolation effect within a sub-100 nm nanograting structure, the design of the pressure sensor is optimized through numerical analysis and finite element method (FEM) simulations. Fabricated using a nanoscale wet-chemical digital etching process and nanoimprint lithography, the sensor features a sub-100 nm valley nanograting structure. It exhibits an exceptional sensitivity of 0.05 kPa⁻¹, achieving capacitance changes 4.2 times greater than those of flat substrate designs. Furthermore, the sub-100 nm nanostructured pressure sensor effectively reduces bending strain to 0.175 times that of flat substrates, ensuring stable performance even at a 2.5 mm radius of curvature. This highly reliable flexible pressure sensor array enables real-time pressure mapping and human artery pulse monitoring, making it highly suitable for tactile and wearable sensing applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"91 4 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Md Redwanul Islam, Niklas Wolff, Georg Schönweger, Tom-Niklas Kreutzer, Margaret Brown, Maike Gremmel, Eric S. Ollanescu-Orendi, Patrik Straňák, Lutz Kirste, Geoff L. Brennecka, Simon Fichtner, Lorenz Kienle
This study examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact on the material structure and the polarity of the as-grown films. The O in the bulk Al0.73Sc0.27N was introduced through an external gas source during the reactive sputter process. In comparison to samples without doping, O-doped films showed almost a fourfold reduction of the overall leakage current near the coercive field. In addition, doping resulted in the reduction of the steady-state leakage currents by roughly one order of magnitude at sub-coercive fields. The microstructure analysis through X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) indicated no notable structural degradation in the bulk Al0.73Sc0.27N. The maximum O-doped film exhibited a c-axis out-of-plane texture increase of only 20%, rising from 1.8°, while chemical mapping indicated a consistent distribution of O throughout the bulk. Our results further demonstrate the ability to control the as-deposited polarity of Al0.73Sc0.27N via the O-concentration, changing from nitrogen (N)- to metal (M)-polar orientation. Thus, this article presents a promising approach to mitigate the leakage current in wurtzite-type Al0.73Sc0.27N without incurring any significant structural degradation of the bulk thin film, thereby making ferroelectric nitrides more suitable for microelectronic applications.
{"title":"Oxygen Doping in Ferroelectric Wurtzite-type Al0.73Sc0.27N: Improved Leakage and Polarity Control","authors":"Md Redwanul Islam, Niklas Wolff, Georg Schönweger, Tom-Niklas Kreutzer, Margaret Brown, Maike Gremmel, Eric S. Ollanescu-Orendi, Patrik Straňák, Lutz Kirste, Geoff L. Brennecka, Simon Fichtner, Lorenz Kienle","doi":"10.1002/aelm.202400874","DOIUrl":"https://doi.org/10.1002/aelm.202400874","url":null,"abstract":"This study examines systematic oxygen (<b>O</b>)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al<sub>0.73</sub>Sc<sub>0.27</sub>N thin films, along with its impact on the material structure and the polarity of the as-grown films. The <b>O</b> in the bulk Al<sub>0.73</sub>Sc<sub>0.27</sub>N was introduced through an external gas source during the reactive sputter process. In comparison to samples without doping, <b>O</b>-doped films showed almost a fourfold reduction of the overall leakage current near the coercive field. In addition, doping resulted in the reduction of the steady-state leakage currents by roughly one order of magnitude at sub-coercive fields. The microstructure analysis through X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) indicated no notable structural degradation in the bulk Al<sub>0.73</sub>Sc<sub>0.27</sub>N. The maximum O-doped film exhibited a c-axis out-of-plane texture increase of only 20%, rising from 1.8°, while chemical mapping indicated a consistent distribution of <b>O</b> throughout the bulk. Our results further demonstrate the ability to control the as-deposited polarity of Al<sub>0.73</sub>Sc<sub>0.27</sub>N via the <b>O</b>-concentration, changing from nitrogen (N)- to metal (M)-polar orientation. Thus, this article presents a promising approach to mitigate the leakage current in wurtzite-type Al<sub>0.73</sub>Sc<sub>0.27</sub>N without incurring any significant structural degradation of the bulk thin film, thereby making ferroelectric nitrides more suitable for microelectronic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study investigates the effects of various ion implantation processes on the electrical performance of flexible low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) backplanes. The introduction of BF2 ion implantation induces an additional shallow defect level near the valence band edge within the polycrystalline silicon band gap, as confirmed by deep-level transient spectroscopy (DLTS). Simultaneously, this process reduces deep-level traps within the band gap. Density functional theory (DFT) calculations further reveal that the BF2 clusters in polycrystalline silicon function as donors, effectively passivating defect states within the TFT channel. This effect contributes to the observed reduction in deep-level traps. Consequently, BF2-doped TFT channels exhibit a lower density of deep-level traps, leading to enhanced electrical stability of the TFT devices under continuous electrical stress. As a result, AMOLED displays driven by these stabilized TFT backplanes demonstrate reduced image sticking and improved image quality. The above achievements provide a systematic methodology that combines experimental analysis and theoretical model calculation for the in-depth exploration of the intrinsic mechanisms of device performance in the display industry.
{"title":"TFT Backplanes Doped by BF2 Ion for Improved Stability and AMOLED Display Quality","authors":"Ying Shen, Fa-Hsyang Chen, Dongliang Yu, Xue Liu, Yinghai Ma, Xuyang Zhang, Feiyue Cheng, Xiujian Zhu, Xuecheng Zou","doi":"10.1002/aelm.202400989","DOIUrl":"https://doi.org/10.1002/aelm.202400989","url":null,"abstract":"This study investigates the effects of various ion implantation processes on the electrical performance of flexible low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) backplanes. The introduction of BF<sub>2</sub> ion implantation induces an additional shallow defect level near the valence band edge within the polycrystalline silicon band gap, as confirmed by deep-level transient spectroscopy (DLTS). Simultaneously, this process reduces deep-level traps within the band gap. Density functional theory (DFT) calculations further reveal that the BF<sub>2</sub> clusters in polycrystalline silicon function as donors, effectively passivating defect states within the TFT channel. This effect contributes to the observed reduction in deep-level traps. Consequently, BF<sub>2</sub>-doped TFT channels exhibit a lower density of deep-level traps, leading to enhanced electrical stability of the TFT devices under continuous electrical stress. As a result, AMOLED displays driven by these stabilized TFT backplanes demonstrate reduced image sticking and improved image quality. The above achievements provide a systematic methodology that combines experimental analysis and theoretical model calculation for the in-depth exploration of the intrinsic mechanisms of device performance in the display industry.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"17 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shubham Tyagi, Mohammed Ghadiyali, Udo Schwingenschlögl
Employing first-principles calculations and the non-equilibrium Green's function method, a hexa-peri-hexabenzocoronene nanoflake is investigated on an armchair graphene nanoribbon. It turns out that a current modulation of up to 25% can be achieved by twisting of the nanoflake due to modulated scattering as a consequence of changes in the orbital overlap. The effect of twist gating is reminiscent of current control by electrostatic gating with a large variety of potential applications.
{"title":"Twist Gating of a Graphene Nanoribbon","authors":"Shubham Tyagi, Mohammed Ghadiyali, Udo Schwingenschlögl","doi":"10.1002/aelm.202400697","DOIUrl":"https://doi.org/10.1002/aelm.202400697","url":null,"abstract":"Employing first-principles calculations and the non-equilibrium Green's function method, a hexa-peri-hexabenzocoronene nanoflake is investigated on an armchair graphene nanoribbon. It turns out that a current modulation of up to 25% can be achieved by twisting of the nanoflake due to modulated scattering as a consequence of changes in the orbital overlap. The effect of twist gating is reminiscent of current control by electrostatic gating with a large variety of potential applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"55 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143635364","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shubhradip Guchait, Diego R. Hinojosa, Nathan James Pataki, Said Oummouch, Laurent Herrmann, Mario Caironi, Michael Sommer, Martin Brinkmann
This study demonstrates the possibility to enhance thermoelectric properties of n-type benzodifuranone-based copolymers using a combination of polymer orientation (using high temperature rubbing) and sequential doping with the dopant N-DMBI-H. It focuses on the impact of the side chain length and the chemical nature of the comonomer (thiophene vs furan) on the efficacy of this methodology that preserves the facile solution-processability of this polymer family and enables effective sequential doping without a thermal activation step. The combination of high temperature rubbing and thermal annealing helps reach a high orientation of the copolymers with the thiophene comonomer regardless of the length of the side chains whereas the furan-based polymer is marginally aligned. The high orientation of thiophene-based copolymers results in a strong improvement of electrical conductivity and power factors reaching up to 9.8 ± 1.6 S cm−1 and 8 ± 3 µW m−1.K2, respectively.
{"title":"Thermoelectric Properties of a Family of Benzodifuranone-Based Conjugated Copolymers in Oriented Thin Films Doped Sequentially With NDMBI-H","authors":"Shubhradip Guchait, Diego R. Hinojosa, Nathan James Pataki, Said Oummouch, Laurent Herrmann, Mario Caironi, Michael Sommer, Martin Brinkmann","doi":"10.1002/aelm.202500047","DOIUrl":"https://doi.org/10.1002/aelm.202500047","url":null,"abstract":"This study demonstrates the possibility to enhance thermoelectric properties of n-type benzodifuranone-based copolymers using a combination of polymer orientation (using high temperature rubbing) and sequential doping with the dopant N-DMBI-H. It focuses on the impact of the side chain length and the chemical nature of the comonomer (thiophene vs furan) on the efficacy of this methodology that preserves the facile solution-processability of this polymer family and enables effective sequential doping without a thermal activation step. The combination of high temperature rubbing and thermal annealing helps reach a high orientation of the copolymers with the thiophene comonomer regardless of the length of the side chains whereas the furan-based polymer is marginally aligned. The high orientation of thiophene-based copolymers results in a strong improvement of electrical conductivity and power factors reaching up to 9.8 ± 1.6 S cm<sup>−1</sup> and 8 ± 3 µW m<sup>−1.</sup>K<sup>2</sup>, respectively.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"214 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143641138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Somi Park, Akeem Raji, So-Young Boo, Eun-Jeong Jang, Akpeko Gasonoo, Jaeyong Park, Sungmin Kwon, Jonghee Lee, Jae-Hyun Lee
Tandem organic light-emitting diodes (OLEDs) are two or more emitting units that are connected in series with charge generation layer(s) (CGLs). Although these devices can achieve higher efficiencies and longer operating lifetimes, the CGL is a key element that determines the lifetime and efficiency of these devices. This study investigates the charge generation and operation mechanisms in pristine and aged organic p–n heterojunction CGLs with and without an interlayer (IL) using impedance spectroscopy (IS) and equivalent circuit simulations. Current density and voltage (J–V) analyses show a nearly three times higher current density of the CGL devices with an IL, requiring lower operating voltage and an unchanged onset voltage after aging, demonstrating device stability. The IS and equivalent circuit simulation results reveal that the charge generation efficiency of CGL devices with an IL can be attributed to the lower energy barrier imposed by the IL at the p–n heterojunction and the stability of its molecules after electrical aging. Further investigations providing a clear understanding of the reason behind the stability and efficient operating mechanism in these devices intuitively demonstrate that IS and equivalent circuit simulations can be effectively employed for electrical stability research on multilayered organic devices.
{"title":"Effect of Interlayer on Doped Organic p–n Heterojunction Charge Generation Layers Using Impedance Spectroscopy","authors":"Somi Park, Akeem Raji, So-Young Boo, Eun-Jeong Jang, Akpeko Gasonoo, Jaeyong Park, Sungmin Kwon, Jonghee Lee, Jae-Hyun Lee","doi":"10.1002/aelm.202400609","DOIUrl":"https://doi.org/10.1002/aelm.202400609","url":null,"abstract":"Tandem organic light-emitting diodes (OLEDs) are two or more emitting units that are connected in series with charge generation layer(s) (CGLs). Although these devices can achieve higher efficiencies and longer operating lifetimes, the CGL is a key element that determines the lifetime and efficiency of these devices. This study investigates the charge generation and operation mechanisms in pristine and aged organic p–n heterojunction CGLs with and without an interlayer (IL) using impedance spectroscopy (IS) and equivalent circuit simulations. Current density and voltage (<i>J–V</i>) analyses show a nearly three times higher current density of the CGL devices with an IL, requiring lower operating voltage and an unchanged onset voltage after aging, demonstrating device stability. The IS and equivalent circuit simulation results reveal that the charge generation efficiency of CGL devices with an IL can be attributed to the lower energy barrier imposed by the IL at the p–n heterojunction and the stability of its molecules after electrical aging. Further investigations providing a clear understanding of the reason behind the stability and efficient operating mechanism in these devices intuitively demonstrate that IS and equivalent circuit simulations can be effectively employed for electrical stability research on multilayered organic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143608541","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Vasilii Balanov, Jani Peräntie, Jaakko Palosaari, Suhas Yadav, Yang Bai
Bulk Photovoltaic Effect
In article number 2400471, Yang Bai and co-workers validate the hypothesis of improved bulk photovoltaic effect promoted by a stacked domain structure in bulk ferroelectric crystals. This hypothesis had only been demonstrated in epitaxial thin films and remained as an open question in other materials for over a decade. Artist: Laura Tiitto, Design Inspis Oy.
{"title":"Study on Influence of AC Poling on Bulk Photovoltaic Effect in Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals (Adv. Electron. Mater. 3/2025)","authors":"Vasilii Balanov, Jani Peräntie, Jaakko Palosaari, Suhas Yadav, Yang Bai","doi":"10.1002/aelm.202570009","DOIUrl":"10.1002/aelm.202570009","url":null,"abstract":"<p><b>Bulk Photovoltaic Effect</b></p><p>In article number 2400471, Yang Bai and co-workers validate the hypothesis of improved bulk photovoltaic effect promoted by a stacked domain structure in bulk ferroelectric crystals. This hypothesis had only been demonstrated in epitaxial thin films and remained as an open question in other materials for over a decade. Artist: Laura Tiitto, Design Inspis Oy.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 3","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202570009","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143589976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Alexander Bartenev, Camilo Verbel, Qin Wu, Fernando Camino, Armando Rúa, Sergiy Lysenko
Light Matter Interaction
In article number 2400539, Sergiy Lysenko and co-workers show that the light-induced formation of a nonequilibrium excited state in vanadium oxide triggers an insulator-metal phase transition by melting a correlated electronic state. A free-energy Landau-Ginzburg potential Φ, reconstructed across a broad range of temperatures and excitation energies, reveals its ultrafast modification by light, accompanied by a complex evolution of the order parameter η.
{"title":"Photoinduced Melting of V4O7 Correlated State (Adv. Electron. Mater. 3/2025)","authors":"Alexander Bartenev, Camilo Verbel, Qin Wu, Fernando Camino, Armando Rúa, Sergiy Lysenko","doi":"10.1002/aelm.202570008","DOIUrl":"10.1002/aelm.202570008","url":null,"abstract":"<p><b>Light Matter Interaction</b></p><p>In article number 2400539, Sergiy Lysenko and co-workers show that the light-induced formation of a nonequilibrium excited state in vanadium oxide triggers an insulator-metal phase transition by melting a correlated electronic state. A free-energy Landau-Ginzburg potential Φ, reconstructed across a broad range of temperatures and excitation energies, reveals its ultrafast modification by light, accompanied by a complex evolution of the order parameter η.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 3","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-03-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202570008","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143590256","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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