Advanced Electronic Materials最新文献_第2页

Analysis of Magnetic Switching in Magnetically Coupled Dual Free Layers Within Magnetic Tunnel Junctions (MTJ) for STT MRAM STT MRAM磁隧道结（MTJ）内磁耦合双自由层的磁开关分析

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2026-01-30 DOI: 10.1002/aelm.202500692

Shujun Ye, Koichi Nishioka

For large‐scale deployment of spin‐transfer‐torque (STT) Magnetic Random Access memory (MRAM) in integrated circuits (ICs), achieving both a low write current ( I w ) and high thermal stability ( Δ ) in magnetic tunnel junctions (MTJ) is crucial. To address this challenge, theoretically investigated magnetically coupled dual free layers (FL1 and FL2), under the condition that the perpendicular magnetic anisotropy (PMA) of FL1 is smaller than that of FL2. Particular emphasis was placed on the effect of magnetic coupling energy ( J cpl ) on magnetic reversals and thermal stability of free layers. Depending on J cpl and I w , four distinct switching reversals were identified: Phase 1 (only FL1 reverses), Phase 2 (FL1 reverses first, followed by FL2), Phase 3 (simultaneous incoherent reversal of FL1 and FL2), and Phase 4 (coherent reversal of FL1 and FL2). When J cpl is strong, Phase 4 dominates, and the critical write current I crt reaches its maximum ( I crt_max ). In contrast, when J cpl is moderately chosen, Phase 2 emerges, and I crt attains its minimum ( I crt_min ). Notably, the ratio I crt_min / I crt_max consistently approaches 50%, demonstrating that an optimized J cpl can halve the write current requirement. Energy profile analysis revealed that Phase 4 involves a single high‐energy barrier, while Phase 2 exhibits a smaller prebarrier that precedes the main energy barrier. This double‐peak structure in Phase 2 enables a smaller switching barrier, resulting in 50% reduction in write current. Moreover, thermal stability increases with the increase of J cpl , and values exceeding 128 were achieved at the J cpl corresponding to I crt_min in devices with a diameter of 30 nm. These values meet the requirements for reliable data retention for practical STT‐MRAM applications.

为了在集成电路（ic）中大规模部署自旋转移扭矩（STT）磁随机存取存储器（MRAM），在磁隧道结（MTJ）中实现低写入电流（I w）和高热稳定性（Δ）至关重要。为了解决这一挑战，在FL1的垂直磁各向异性（PMA）小于FL2的条件下，从理论上研究了磁耦合双自由层（FL1和FL2）。重点讨论了磁耦合能（jcpl）对自由层磁反转和热稳定性的影响。根据J cpl和I w，确定了四种不同的转换逆转：阶段1（只有FL1逆转），阶段2 (FL1首先逆转，其次是FL2)，阶段3 （FL1和FL2同时非相干逆转）和阶段4 （FL1和FL2的相干逆转）。当jcpl较强时，阶段4占主导地位，临界写电流I crt达到最大值（I crt_max）。相反，当适度选择jcpl时，阶段2出现，并且I crt达到其最小值（I crt_min）。值得注意的是，I crt_min / I crt_max的比率始终接近50%，这表明经过优化的jcpl可以将写电流需求减半。能量分布分析表明，第4阶段包含一个高能量势垒，而第2阶段在主能量势垒之前有一个较小的前势垒。第二阶段的双峰结构使开关势垒更小，从而使写入电流减少50%。此外，热稳定性随jcpl的增加而增加，在直径为30 nm的器件中，I crt_min对应的jcpl值超过128。这些值满足实际STT - MRAM应用对可靠数据保留的要求。

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引用次数: 0

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference 用于硬件加速模型训练和推理的新兴存储器和设备技术

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2026-01-29 DOI: 10.1002/aelm.202500796

Yoonho Cho, Dae‐won Kim, Yujin Kimh, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi

The accelerating evolution of artificial intelligence (AI) has underscored the need for energy‐efficient hardware that can overcome the memory bottleneck inherent to von Neumann architectures. To address this challenge, compute‐in‐memory (CIM) architectures based on emerging memory technologies with analog tunability and scalability have emerged as an effective solution for parallel and low‐power computation. This review discusses recent progress in emerging memories—including resistive, phase‐change, ferroelectric, electrochemical, and charge‐based devices—and their implementation in CIM architectures for both training and inference. We highlight material‐ and device‐level strategies to achieve high endurance, analog multilevel switching, and linear weight updates required for training‐centric systems, as well as stable retention and low power crucial for inference‐centric applications. Furthermore, we discuss efforts on system‐level integration that combine device‐level advances with circuit/architecture co‐optimization to construct efficient hardware platforms. By bridging materials science, device physics, and system‐level integration, this review provides a comprehensive perspective on the pathways toward energy‐efficient CIM hardware for next‐generation edge and on‐device AI systems.

人工智能（AI）的加速发展强调了对节能硬件的需求，这些硬件可以克服冯·诺伊曼架构固有的内存瓶颈。为了应对这一挑战，基于具有模拟可调性和可扩展性的新兴内存技术的内存计算（CIM）架构已经成为并行和低功耗计算的有效解决方案。本文讨论了新兴存储器的最新进展，包括电阻式、相变、铁电、电化学和基于电荷的器件，以及它们在CIM架构中用于训练和推理的实现。我们重点介绍了材料级和器件级策略，以实现以训练为中心的系统所需的高耐用性、模拟多电平开关和线性权重更新，以及以推理为中心的应用所需的稳定保持和低功耗。此外，我们讨论了系统级集成的努力，将器件级的进步与电路/架构的协同优化相结合，以构建高效的硬件平台。通过连接材料科学、设备物理和系统级集成，本综述为下一代边缘和设备上人工智能系统的节能CIM硬件提供了一个全面的视角。

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引用次数: 0

Embedded Direct‐Written Organic Micro‐TEGs for High‐Efficiency Skin‐Heat Harvesting 嵌入式直接写入有机微型TEGs，用于高效皮肤热采集

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2026-01-29 DOI: 10.1002/aelm.202500789

Milad Jabri, Saeed Masoumi, Dimitrios Paparas, Mónica Acuautla, Luigi Giuseppe Occhipinti

Flexible thermoelectric generators (TEGs) are transforming wearable electronics by harvesting body heat as a sustainable power source, offering an alternative to conventional energy systems. However, their performance is often constrained by low thermal‐to‐electrical conversion efficiency. This work presents a detailed numerical investigation, based on finite element analysis (FEA), to optimize direct‐written organic micro‐TEGs (µ‐OTEGs) embedded in flexible substrates for enhanced skin‐heat energy harvesting. Organic semiconductors, including p ‐type poly(3,4‐ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and n ‐type poly(benzodifurandione)/benzodipyrandione (PBFDO/BPDO), were selected for their tunable electrical and mechanical properties. Key design parameters were systematically refined to maximize power density and conversion efficiency. The embedded structure effectively minimizes interfacial heat loss, ensuring stable performance across various body locations and thermal conditions. Under optimized conditions, the embedded‐leg µ‐OTEG increases the temperature gradient (ΔT) from 3.58 to 10.4°C, raises the open‐circuit voltage ( V OC ) from 10.41 to 18.4 mV, and boosts the output power from 0.83 to 2.56 µW. Remarkably, the proposed architecture achieves over a 250% enhancement in thermal efficiency compared with conventional wearable TEGs, attributed to the optimized embedded configuration. These findings highlight the potential of direct‐written organic TEGs as scalable, self‐powered platforms for next‐generation wearable and biomedical devices.

柔性热电发电机（teg）正在改变可穿戴电子产品，通过收集人体热量作为可持续能源，为传统能源系统提供替代方案。然而，它们的性能往往受到低热电转换效率的限制。这项工作提出了一个详细的数值研究，基于有限元分析（FEA），以优化直接写入有机微teg（µ- oteg）嵌入柔性基板，以增强皮肤热能收集。有机半导体，包括p型聚（3,4 -乙烯二氧噻吩）：聚苯乙烯磺酸盐（PEDOT:PSS）和n型聚（苯二呋喃二酮）/苯二吡喃二酮（pbdo /BPDO），因其可调的电学和力学性能而被选中。系统地改进了关键设计参数，以最大限度地提高功率密度和转换效率。嵌入式结构有效地减少了界面热损失，确保了在各种身体位置和热条件下的稳定性能。在优化条件下，嵌入式支腿µ‐OTEG将温度梯度（ΔT）从3.58°C提高到10.4°C，将开路电压（V OC）从10.41提高到18.4 mV，并将输出功率从0.83提高到2.56µW。值得注意的是，与传统可穿戴teg相比，该架构的热效率提高了250%以上，这要归功于优化的嵌入式配置。这些发现突出了直接写入有机teg作为下一代可穿戴和生物医学设备的可扩展、自供电平台的潜力。

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引用次数: 0

Ion Charge Compensation upon Electrochemical Doping of Redox Polymer Films with Tunable Crosslinking Density 可调交联密度氧化还原聚合物薄膜的电化学掺杂离子电荷补偿

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2026-01-29 DOI: 10.1002/aelm.202500645

Claudia Malacrida, Klaus Dirnberger, El Mahdi Halim, Ozlem Sel, Hubert Perrot, Sabine Ludwigs

The electrochemical doping behavior of thin films of redox-active copolymers of vinyl(triphenylamine, (TPA)) and styrene (S) with differing ratios from 100:0 (PVTPA) to 20-80 (PVTPA-co-PS) is reported. The presence of TPA units in the polymers allows for electrochemical dimerization into tetraphenylbenzidine (TPB) units which act as redox-active π-systems in the crosslinked films. By changing the copolymer ratio, the degree of crosslinking can be tailored which has direct influences on the electrochemical behavior, e.g., visible in the cyclic voltammetry profiles and accompanying in situ conductance measurements. The crosslinked films show reversible oxidation and reduction behavior and are therefore ideal model systems to study mixed conductivity characteristics for mixed conducting polymers. Electrochemical Quartz Crystal Microbalance (EQCM) and ac-electrogravimetry are used to monitor the ion charge compensation process and associated gravimetric changes of the crosslinked films upon electrochemical doping. Our data clearly show that PF₆⁻ anion (hexafluorophosphate) transfer presents the major contribution in the charge compensation process along with concomitant acetonitrile solvent contributions. Crosslinked copolymer films show overall lower anion concentrations, which coincides with lower redox-active moieties, and overall lower swelling ratios due to solvent contributions which we assign to the high amount of non-redox-active styrene units compared to the crosslinked homopolymer films.

报道了乙烯基（三苯胺，（TPA））和苯乙烯(S)的氧化还原活性共聚物（PVTPA）在100:0 （PVTPA）和20-80 （PVTPA-co- ps）之间的电化学掺杂行为。聚合物中TPA单元的存在允许电化学二聚化成四苯基联苯胺（TPB）单元，在交联膜中充当氧化还原活性π体系。通过改变共聚物的比例，可以调整交联的程度，这对电化学行为有直接的影响，例如，在循环伏安曲线和伴随的原位电导测量中可见。交联膜表现出可逆的氧化还原行为，是研究混合导电聚合物混合导电特性的理想模型体系。采用电化学石英晶体微天平（EQCM）和交流电重法监测了电化学掺杂后交联膜的离子电荷补偿过程和相关的重量变化。我们的数据清楚地表明，在电荷补偿过程中，PF6−阴离子（六氟磷酸盐）转移和伴随的乙腈溶剂转移是主要的贡献。交联共聚物薄膜总体阴离子浓度较低，这与较低的氧化还原活性部分相一致，并且由于溶剂的贡献，我们将其归因于与交联均聚聚合物薄膜相比，大量的非氧化还原活性苯乙烯单元。

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引用次数: 0

RRAM Variability Harvesting for CIM‐Integrated TRNG CIM集成TRNG的RRAM变异性采集

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2026-01-27 DOI: 10.1002/aelm.202500635

Ankit Bende, Gokulnath Rajendran, Regina Dittmann, Anupam Chattopadhyay, Vikas Rana

True random number generators (TRNGs) are essential for hardware security in edge AI systems, yet conventional designs often incur large analog overhead and limited throughput imposed by standalone macros. We present a Compute‐in‐Memory (CiM)‐compatible TRNG that directly exploits the intrinsic stochasticity of TaO x ‐based 1T1R RRAM arrays, enabling entropy extraction within the memory fabric. Bit‐rate is scaled by parallel column readout circuits consisting of a transimpedance amplifier (TIA) and an ADC. Our design achieves up to ∼270 Mbps throughput with TIA + 16‐bit ADC per column. Furthermore, a lightweight shift‐XOR post‐processing stage permits reduction to 8‐bit ADC resolution, lowering energy consumption to ∼51 pJ bit −1 without degrading randomness quality. Fully compatible with standard CiM read paths, the architecture introduces minimal hardware overhead and provides a scalable and energy‐efficient foundation for secure random number generation in edge‐AI applications.

真正的随机数生成器（trng）对于边缘人工智能系统的硬件安全性至关重要，但传统的设计通常会产生大量的模拟开销和由独立宏施加的有限吞吐量。我们提出了一种计算-内存（CiM）兼容的TRNG，它直接利用了基于TaO x的1T1R RRAM阵列的固有随机性，从而实现了内存结构内的熵提取。比特率由一个跨阻放大器（TIA）和一个ADC组成的并行列读出电路进行缩放。我们的设计通过TIA +每列16位ADC实现高达~ 270 Mbps的吞吐量。此外，轻量级的移异或后处理阶段允许将ADC分辨率降低到8位，在不降低随机性质量的情况下将能耗降低到51 pJ bit - 1。该架构与标准CiM读取路径完全兼容，引入了最小的硬件开销，并为边缘AI应用中的安全随机数生成提供了可扩展和节能的基础。

引用次数: 0

Ultra-Fast, Low-Resistance Nano Gap Electromechanical Switch for Power Gating Applications (Adv. Electron. Mater. 2/2026) 用于电源门控应用的超快速、低电阻纳米间隙机电开关（Adv.电子）。板牙。2/2026)

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2026-01-27 DOI: 10.1002/aelm.70250

Tae-Soo Kim, So-Young Lee, Yu-Hyun Shim, Sung-Ho Kim, Yong-Bok Lee, Jun-Bo Yoon

Low-Power Semiconductor Systems

This cover concept illustrates how a microelectromechanical systems (MEMS) power-gating switch could control power delivery to CMOS logic blocks. In their Research Article (10.1002/aelm.202500668), Yong-Bok Lee, Jun-Bo Yoon, and co-workers develop a nano-gap MEMS switch optimized for power gating, featuring a 20 nm air gap and high-stiffness design that enable 0.95 Ω on-resistance, 30 ns switching time, and <100 fA leakage for future low-power semiconductor systems.

引用次数: 0

Cement-SnSe Thermoelectric Devices With High Seebeck Coefficients 高塞贝克系数水泥- snse热电器件

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2026-01-27 DOI: 10.1002/aelm.202500649

Geraint Howells, Shahin Mehraban, Thomas Dunlop, Nick Lavery, Matthew J. Carnie, Matthew Burton

In this work, we present a cost-effective, scalable approach for fabricating thermoelectric (TE) generators using p-type tin selenide (SnSe) bonded in a cement matrix via a slurry mold casting technique. Traditional methods for manufacturing SnSe-based TE materials are energy-intensive and economically unfeasible. By contrast, our approach employs common Portland cement as a binder, offering a viable alternative that reduces processing time, complexity, and cost. Ball-milled SnSe is mixed with varying concentrations of cement and cast into molds for samples, resulting in dimensions of 1.5 × 1.5 × 0.75 cm³. The best-performing formulations are 0.2 wt.% cement, which exhibited a power factor of 77 µW m⁻¹·K⁻² at 800 K and the 0.3 wt.% cement sample, which has a peak ZT of 0.3 at 850 K, the highest ZT of any cement containing TE to date. A proof-of-concept thermoelectric generator (TEG) comprising six legs of SnSe-cement composite demonstrated a peak power output of ∼73 µW at 850 K. Furthermore, calculations show that using the cement-bonded SnSe to harvest industrial waste heat in a steel-making environment can yield a potential 1521.3 W m⁻² of electrical energy.

在这项工作中，我们提出了一种成本效益高、可扩展的方法，通过浆液模铸造技术将p型硒化锡（SnSe）粘合在水泥基体中，制造热电（TE）发电机。传统的制造snse基TE材料的方法是能源密集型的，在经济上是不可行的。相比之下，我们的方法采用普通波特兰水泥作为粘合剂，提供了一种可行的替代方案，减少了处理时间、复杂性和成本。球磨的SnSe与不同浓度的水泥混合，浇铸成样品的模具，尺寸为1.5 × 1.5 × 0.75 cm3。性能最好的配方是0.2 wt.%的水泥，在800 K时的功率因数为77µW m−1·K−2，而0.3 wt.%的水泥样品在850 K时的ZT峰值为0.3，是迄今为止含TE水泥中ZT最高的。概念验证型热电发电机（TEG）由6个SnSe-cement复合材料组成，在850 K时的峰值输出功率为~ 73 μ W。此外，计算表明，在炼钢环境中，使用水泥粘合的SnSe来收集工业废热可以产生1521.3 W m−2的潜在电能。

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引用次数: 0

Conformal Reconfigurable Intelligent Surfaces: A Cylindrical Geometry Perspective 保形可重构智能曲面：圆柱几何视角

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2026-01-27 DOI: 10.1002/aelm.202500550

Filippo Pepe, Ivan Iudice, Giuseppe Castaldi, Marco Di Renzo, Vincenzo Galdi

Curved reconfigurable intelligent surfaces (RISs) represent a promising frontier for next‐generation wireless communications, enabling adaptive wavefront control on nonplanar platforms such as unmanned aerial vehicles and urban infrastructure. This work presents a systematic investigation of cylindrical RISs, progressing from idealized surface‐impedance synthesis to practical implementations based on simple one‐bit meta‐atoms. Exact analytical and geometrical‐optics‐based models are first developed to explore fundamental design limits, followed by a semi‐analytical formulation tailored to discrete, reconfigurable architectures. This model enables efficient beam synthesis using both evolutionary optimization and low‐complexity strategies, including the minimum power distortionless response method, and is validated through full‐wave simulations. Results confirm that one‐bit RISs can achieve directive scattering with manageable sidelobe levels and minimal hardware complexity. These findings establish the viability of cylindrical RISs and open the door to their integration into dual‐use wireless platforms for real‐world communication scenarios.

曲面可重构智能表面（RISs）代表了下一代无线通信的一个有前途的前沿，可以在无人机和城市基础设施等非平面平台上实现自适应波前控制。这项工作提出了圆柱形RISs的系统研究，从理想的表面阻抗合成到基于简单的一位元原子的实际实现。首先开发了精确的分析和基于几何光学的模型来探索基本的设计限制，然后是针对离散的、可重构的架构量身定制的半分析公式。该模型使用进化优化和低复杂度策略（包括最小功率无失真响应方法）实现了高效的波束合成，并通过全波模拟进行了验证。结果证实，1位RISs可以在可控的旁瓣电平和最小的硬件复杂性下实现定向散射。这些发现确立了圆柱形RISs的可行性，并为其集成到现实世界通信场景的两用无线平台打开了大门。

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引用次数: 0

Heterogeneous Integration of Flipped Oxide Heterostructure Membranes for Nanoelectronics 用于纳米电子学的翻转氧化物异质结构膜的非均相集成

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2026-01-27 DOI: 10.1002/aelm.202500633

Ruiqi Sun, Ahmed Omran, Muqing Yu, Kyoungjun Lee, Keeyong Lee, Soli Sung, Sangho Oh, Patrick irvin, Jeremy Levy, Chang‐Beom Eom

Freestanding complex oxide membranes enable the release and transfer of epitaxial films, offering new design freedoms for next‐generation electronics. While the LaAlO 3 /SrTiO 3 (LAO/STO) heterostructure exhibits remarkable tunable conductivity at its interface, the active interface remains buried beneath the substrate, limiting access to this functionality. Here, we demonstrate how the LAO/STO heterostructure, in membrane form, can be flipped and precisely positioned on silicon and other platforms using polymer‐free micromanipulation. The transferred membranes preserve atomically smooth surfaces, high crystallinity, and key electronic properties. Through the 44‐nm insulating STO layer, ultra‐low‐voltage electron‐beam lithography (ULV‐EBL) writes conductive nanostructures at the now‐accessible STO/LAO interface, offering the potential to function as programmable local gates that modulate charge carriers in the underlying silicon. The platform establishes a general strategy for integrating complex oxide heterostructures with semiconductors, quantum materials, and flexible substrates, enabling new architectures for reprogrammable nanoelectronic devices.

独立的复杂氧化物膜使外延膜的释放和转移成为可能，为下一代电子产品提供了新的设计自由。虽然LaAlO 3 /SrTiO 3 （LAO/STO）异质结构在其界面上表现出显著的可调谐导电性，但活性界面仍然埋在衬底下，限制了这种功能的使用。在这里，我们展示了如何使用无聚合物微操作将膜形式的LAO/STO异质结构翻转并精确定位在硅和其他平台上。转移膜保持原子光滑的表面，高结晶度和关键的电子性能。通过44纳米绝缘STO层，超低电压电子束光刻技术（ULV - EBL）在现在可访问的STO/LAO界面上写入导电纳米结构，提供了作为可编程本地门的潜力，可以调制底层硅中的载流子。该平台建立了将复杂氧化物异质结构与半导体、量子材料和柔性衬底集成的通用策略，为可重新编程的纳米电子器件提供了新的架构。

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引用次数: 0

Enhancement of the Photoelectric Performance of (6,5) Carbon Nanotubes via Construction of Type‐I Heterojunctions with Rhodamine B （6,5）碳纳米管与罗丹明B构建I型异质结提高光电性能

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2026-01-27 DOI: 10.1002/aelm.202500790

Shilong Li, Linhai Li, Dehua Yang, Xiaojun Wei, Weiya Zhou, Huaping Liu

Precise structural design and controllable fabrication of single‐wall carbon nanotube (SWCNT) heterojunctions are key to harnessing their optoelectronic performance and advancing high‐performance optoelectronic devices. Here, we integrated Rhodamine B (RhB) molecules into (6,5) SWCNT films via a simple immersion method, thereby forming a Type I heterojunction. A dual enhancement of photoluminescence (PL) and photoelectric conversion efficiency was experimentally observed for the first time in Type I heterojunction films, with external PL efficiency increasing by more than two‐fold and photoelectric conversion efficiency improving by approximately one order of magnitude. These enhancements are attributed to the strong π–π stacking interactions between RhB and (6,5) SWCNTs, as well as the favorable matching of their absorption bands, which facilitates efficient exciton energy transfer from RhB to SWCNTs and substantially increases exciton density in the (6,5) SWCNT films. Additionally, under illumination, the photoinduced electron transfer from RhB to SWCNTs results in the accumulation of positive charges within the RhB layer, triggering the photogating effect and further enhancing the photoconductivity gain. The findings provide new insights into exciton and electron transfer processes in Type‐I heterojunctions for enhancing the photoelectric performance of SWCNT films, offering guidance for the design of high‐performance photoelectric devices.

单壁碳纳米管（SWCNT）异质结的精确结构设计和可控制造是利用其光电性能和推进高性能光电器件的关键。在这里，我们通过简单的浸泡方法将罗丹明B （RhB）分子整合到（6,5）swcnts薄膜中，从而形成I型异质结。首次在I型异质结薄膜中实验观察到光致发光和光转换效率的双重增强，外源光致发光效率提高了2倍以上，光电转换效率提高了约1个数量级。这些增强归因于RhB和（6,5）SWCNTs之间强烈的π -π堆叠相互作用，以及它们的吸收带的良好匹配，这有助于从RhB到SWCNTs的有效激子能量转移，并大大增加（6,5）SWCNTs薄膜中的激子密度。此外，在光照下，从RhB到SWCNTs的光致电子转移导致RhB层内的正电荷积累，触发光控效应，进一步提高光电导率增益。这一发现为研究I型异质结中的激子和电子转移过程提供了新的见解，从而提高了swcnts薄膜的光电性能，为高性能光电器件的设计提供了指导。

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引用次数: 0