The impact of Al/Ti electrodes on enhancing the performance and operational stability of n-channel organic electrolyte-gated transistors (OEGTs) is investigated. Utilizing Al/Ti electrodes as source and drain electrodes in diketopyrrolopyrrole (DPP)-based polymeric semiconductor OEGTs leads to a significant decrease in the charge injection barrier for electrons, resulting in improvement of all electrical parameters including on-current, mobility, on-off ratio, and threshold voltages. Furthermore, through a comparative analysis of transistors utilizing polymer insulators and solid electrolytes as gate dielectrics, the effect of alterations in the electrodes on the contact resistance of each device is examined. In comparison to OEGTs with Au electrodes, OEGTs with Al/Ti electrodes demonstrate higher operational stability following multiple cycling tests. Finally, the OEGTs produced in this study demonstrate reliable short-term memory characteristics, which are subsequently utilized for reservoir computing, achieving a high recognition accuracy of 94% for spoken digits.
{"title":"Impact of Al/Ti Electrodes on the Performance and Operational Stability of n-Channel Solution-Processed Solid-State Electrolyte-Gated Transistors: Applications in Reservoir Computing","authors":"Quanhua Chen, Xiang Wan, Walid Boukhili, Jie Yan, Hong Zhu, Lijian Chen, Chee Leong Tan, Zhihao Yu, Huabin Sun, Yong Xu, Dongyoon Khim","doi":"10.1002/aelm.202500038","DOIUrl":"https://doi.org/10.1002/aelm.202500038","url":null,"abstract":"The impact of Al/Ti electrodes on enhancing the performance and operational stability of n-channel organic electrolyte-gated transistors (OEGTs) is investigated. Utilizing Al/Ti electrodes as source and drain electrodes in diketopyrrolopyrrole (DPP)-based polymeric semiconductor OEGTs leads to a significant decrease in the charge injection barrier for electrons, resulting in improvement of all electrical parameters including on-current, mobility, on-off ratio, and threshold voltages. Furthermore, through a comparative analysis of transistors utilizing polymer insulators and solid electrolytes as gate dielectrics, the effect of alterations in the electrodes on the contact resistance of each device is examined. In comparison to OEGTs with Au electrodes, OEGTs with Al/Ti electrodes demonstrate higher operational stability following multiple cycling tests. Finally, the OEGTs produced in this study demonstrate reliable short-term memory characteristics, which are subsequently utilized for reservoir computing, achieving a high recognition accuracy of 94% for spoken digits.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"36 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143737042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaoying Zhang, Xiangxiang Li, Weiyu Wang, Hongchen Jiang, Xinran Zheng, Huiqi Yang, Xin Ye, Hui Yang
Stretchable organic field-effect transistors (OFETs) based gas sensors have attracted significant attention due to their inherent merits such as excellent mechanical compatibility, flexibility, and signal amplification capabilities. However, achieving low-voltage operation remains challenging, which limits their practical application. Herein, a tri-layer dielectric design is developed to achieve low-voltage, high-mobility stretchable organic transistors for gas sensors. The tri-layer dielectric, consisting of a high-κ polymer film, a non-polar polymer layer, and a cross-linking layer, allows the transistors to operate at −5 V. The stretchable transistor-based gas sensors exhibit high sensitivity of gas detection capability. Thus, stretchable field-effect transistors based on tri-layer dielectrics offer a promising strategy for advancing wearable gas sensors.
{"title":"Low-Voltage and Stretchable Organic Field Effect Transistor Array Based on Tri-Layer Elastomer Dielectric for Gas Sensing","authors":"Xiaoying Zhang, Xiangxiang Li, Weiyu Wang, Hongchen Jiang, Xinran Zheng, Huiqi Yang, Xin Ye, Hui Yang","doi":"10.1002/aelm.202400981","DOIUrl":"https://doi.org/10.1002/aelm.202400981","url":null,"abstract":"Stretchable organic field-effect transistors (OFETs) based gas sensors have attracted significant attention due to their inherent merits such as excellent mechanical compatibility, flexibility, and signal amplification capabilities. However, achieving low-voltage operation remains challenging, which limits their practical application. Herein, a tri-layer dielectric design is developed to achieve low-voltage, high-mobility stretchable organic transistors for gas sensors. The tri-layer dielectric, consisting of a high-κ polymer film, a non-polar polymer layer, and a cross-linking layer, allows the transistors to operate at −5 V. The stretchable transistor-based gas sensors exhibit high sensitivity of gas detection capability. Thus, stretchable field-effect transistors based on tri-layer dielectrics offer a promising strategy for advancing wearable gas sensors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"216 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143737037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Epidermal amplifiers, integral to noninvasive bio-signal monitoring that are in close proximity to the site of interest, have emerged as critical components in the evolution of wearable healthcare and diagnostics. Among various semiconducting materials, carbon nanotubes (CNTs) become one of the most promising candidates due to its great electronic properties. This review provides an overview of the recent developments in flexible amplifiers based on CNTs from the following aspects. The manufacturing strategies for CNT thin-film transistors (TFTs) are first discussed that preserve device integrity and performance from rigid to flexible platforms. The subsequent content concludes the recent development in CNT TFTs, including film deposition processes, high-k dielectric materials, and scaling behaviors, which are pivotal for enhancing the performance of flexible systems. The review further details various circuit topologies, from inverter-based to differential amplifiers, each offering unique advantages in gain, noise rejection, and bandwidth. Successful CNT-based amplifier implementations for physiological signal monitoring are highlighted, emphasizing their impact on wearable electronics. Finally, it discusses the challenges and future prospects of CNT-based flexible amplifiers, charting a course for the next generation of flexible electronics in personal health monitoring.
{"title":"Advances of Carbon Nanotube Based Flexible Amplifiers for Skin-Mounted Physiological Signal Monitoring","authors":"Haitao Zhang, Yulong Yuan, Jian Hu, Li Xiang","doi":"10.1002/aelm.202400991","DOIUrl":"https://doi.org/10.1002/aelm.202400991","url":null,"abstract":"Epidermal amplifiers, integral to noninvasive bio-signal monitoring that are in close proximity to the site of interest, have emerged as critical components in the evolution of wearable healthcare and diagnostics. Among various semiconducting materials, carbon nanotubes (CNTs) become one of the most promising candidates due to its great electronic properties. This review provides an overview of the recent developments in flexible amplifiers based on CNTs from the following aspects. The manufacturing strategies for CNT thin-film transistors (TFTs) are first discussed that preserve device integrity and performance from rigid to flexible platforms. The subsequent content concludes the recent development in CNT TFTs, including film deposition processes, high-k dielectric materials, and scaling behaviors, which are pivotal for enhancing the performance of flexible systems. The review further details various circuit topologies, from inverter-based to differential amplifiers, each offering unique advantages in gain, noise rejection, and bandwidth. Successful CNT-based amplifier implementations for physiological signal monitoring are highlighted, emphasizing their impact on wearable electronics. Finally, it discusses the challenges and future prospects of CNT-based flexible amplifiers, charting a course for the next generation of flexible electronics in personal health monitoring.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"31 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143723528","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study systematically explores the electrical and thermal properties of Cd₃P₂ by alloying it with the Dirac material Cd₃As₂, employing a combined experimental and theoretical approach. The findings demonstrate three distinct characteristics of this solid solution system: i) The continuous solid solution formation between Cd₃P₂ and Cd₃As₂ enables the tuning of the band structure. ii) Increasing As content leads to a reduction in effective mass, decreased deformation potential, and a substantial enhancement in carrier mobility. iii) The system exhibits phosphorus vacancy generation, which creates donor levels within the band gap and consequently impacts thermoelectric performance. Specifically, an ultrahigh mobility exceeding 7 × 103 cm2 V−1 s−1 is achieved in Cd₃PAs. This substantial improvement in mobility across the entire temperature range resulted in a twofold increase in the power factor and a marked enhancement in thermoelectric performance, particularly in the low-temperature region. These results provide foundational insights into the thermoelectric behavior governed by the interplay between the semiconductor Cd₃P₂ and the Dirac material Cd₃As₂, establishing a framework for further research and performance optimization of this solid solution system.
{"title":"Enhancing Thermoelectric Performance of Cd₃P₂ by Alloying with Dirac Material Cd₃As₂","authors":"Kunling Peng, Chenjian Fu, Yunzhen Du, Sikang Zheng, Meng Tian, Pengfei Gao, Jianjun Ying, Wenbin Yi, Xu Lu, Sheng Zhang, Guoyu Wang, Xiaoyuan Zhou","doi":"10.1002/aelm.202500034","DOIUrl":"https://doi.org/10.1002/aelm.202500034","url":null,"abstract":"This study systematically explores the electrical and thermal properties of Cd₃P₂ by alloying it with the Dirac material Cd₃As₂, employing a combined experimental and theoretical approach. The findings demonstrate three distinct characteristics of this solid solution system: i) The continuous solid solution formation between Cd₃P₂ and Cd₃As₂ enables the tuning of the band structure. ii) Increasing As content leads to a reduction in effective mass, decreased deformation potential, and a substantial enhancement in carrier mobility. iii) The system exhibits phosphorus vacancy generation, which creates donor levels within the band gap and consequently impacts thermoelectric performance. Specifically, an ultrahigh mobility exceeding 7 × 10<sup>3</sup> cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> is achieved in Cd₃PAs. This substantial improvement in mobility across the entire temperature range resulted in a twofold increase in the power factor and a marked enhancement in thermoelectric performance, particularly in the low-temperature region. These results provide foundational insights into the thermoelectric behavior governed by the interplay between the semiconductor Cd₃P₂ and the Dirac material Cd₃As₂, establishing a framework for further research and performance optimization of this solid solution system.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"152 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143723529","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Adelaide Bradicich, Yeonju Yu, Timothy D. Brown, Fatme Jardali, Suhas Kumar, R. Stanley Williams, Patrick J. Shamberger
Negative differential resistance (NDR) is a key electronic response enabling two-terminal artificial neurons that can be achieved through different physical phenomena, including phase-homogeneous current density and temperature (electro-thermal) localizations and spatially-localized metal-insulator phase transitions (MITs). These two effects have been observed to occur sequentially in select electrically-biased transition metal oxides. However, it is unknown why and under what conditions localizing behaviors precede MITs, particularly as a function of device length scale. To this end, the interplay between phase-homogeneous electro-thermal localizations and MITs is investigated in a 3D multiphysics simulation of a lateral thin film device, using the material properties of the prototype MIT material VO2. These findings demonstrate that the MIT is nucleated through dynamically localizing current density and temperature. A critical device width (≈0.7 µm in this study) is identified, below which both the electrically-induced electro-thermal and phase inhomogeneities cease to appear. It is demonstrated that the formation of spatial inhomogeneities directly relates to device dimensions, and demonstrate the decoupling of NDR from the MIT through device scaling relationships. These results provide insight into the material phenomena underlying the material's electrical responses, clarifying conditions under which spatial inhomogeneities form in electrically-biased MIT materials.
负差分电阻（NDR）是实现双端人工神经元的一种关键电子响应，它可以通过不同的物理现象实现，包括相位均匀的电流密度和温度（电热）定位以及空间定位的金属-绝缘体相变（MIT）。据观察，这两种效应在某些电偏压过渡金属氧化物中会相继出现。然而，人们还不知道为什么以及在什么条件下局部化行为会先于 MITs 出现，特别是作为器件长度尺度的函数。为此，我们利用原型 MIT 材料 VO2 的材料特性，在横向薄膜器件的三维多物理场模拟中研究了相均电热定位与 MIT 之间的相互作用。这些研究结果表明，MIT 是通过动态局部电流密度和温度成核的。临界器件宽度（在本研究中≈0.7 微米）已经确定，在此宽度以下，电引起的电热不均匀性和相位不均匀性都不再出现。研究表明，空间不均匀性的形成与器件尺寸直接相关，并通过器件缩放关系证明了 NDR 与 MIT 的解耦。这些结果让我们深入了解了材料电响应背后的材料现象，明确了电偏压麻省理工材料形成空间不均匀性的条件。
{"title":"Electrically-Driven Metal-Insulator Transitions Emerging from Localizing Current Density and Temperature","authors":"Adelaide Bradicich, Yeonju Yu, Timothy D. Brown, Fatme Jardali, Suhas Kumar, R. Stanley Williams, Patrick J. Shamberger","doi":"10.1002/aelm.202400975","DOIUrl":"https://doi.org/10.1002/aelm.202400975","url":null,"abstract":"Negative differential resistance (NDR) is a key electronic response enabling two-terminal artificial neurons that can be achieved through different physical phenomena, including phase-homogeneous current density and temperature (electro-thermal) localizations and spatially-localized metal-insulator phase transitions (MITs). These two effects have been observed to occur sequentially in select electrically-biased transition metal oxides. However, it is unknown why and under what conditions localizing behaviors precede MITs, particularly as a function of device length scale. To this end, the interplay between phase-homogeneous electro-thermal localizations and MITs is investigated in a 3D multiphysics simulation of a lateral thin film device, using the material properties of the prototype MIT material VO<sub>2</sub>. These findings demonstrate that the MIT is nucleated through dynamically localizing current density and temperature. A critical device width (≈0.7 µm in this study) is identified, below which both the electrically-induced electro-thermal and phase inhomogeneities cease to appear. It is demonstrated that the formation of spatial inhomogeneities directly relates to device dimensions, and demonstrate the decoupling of NDR from the MIT through device scaling relationships. These results provide insight into the material phenomena underlying the material's electrical responses, clarifying conditions under which spatial inhomogeneities form in electrically-biased MIT materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"16 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143713689","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hydrogels face challenges as flexible electronic materials, including complex preparation processes and difficulty in balancing frost resistance, water retention, and mechanical properties. Here, a cost-effective and efficient strategy for in situ rapid synthesis of hydrogels with Mo2C-derived molybdenum polyoxometalates (POM) is developed. The Mo-POM/ammonium persulfate (APS) redox pair enables rapid initiation of in situ free radical polymerization at room temperature, effectively addressing the limitations associated with conventional photo- or thermally-initiated methods. The tunable redox activity of Mo-POM allows precise control of polymerization time. This synthesis strategy utilizes the “freezing effect” achieved through rapid polymerization to achieve a uniform distribution of hydrogel components. Additionally, the incorporation of Mo-POM and sodium alginate (SA) introduces diverse intermolecular interactions within the hydrogel network, significantly enhancing mechanical properties. LiCl incorporation provides exceptional frost resistance, water retention, durability, and stability even under prolonged load cycling. Furthermore, the hydrogel demonstrates outstanding electromechanical properties, reliably and rapidly responding to both large and subtle motions. This tunable synthesis strategy successfully balances mechanical and electromechanical performance, antifreeze capability, water retention, and durability. Consequently, it offers a promising approach for large-scale, cost-effective industrial production of high-performance hydrogels.
{"title":"Highly Transparent, Conductive, and Mechanically Robust Hydrogels via Rapid In Situ Synthesis for Flexible Electronics","authors":"W. Yuan, J. Zhao","doi":"10.1002/aelm.202400987","DOIUrl":"https://doi.org/10.1002/aelm.202400987","url":null,"abstract":"Hydrogels face challenges as flexible electronic materials, including complex preparation processes and difficulty in balancing frost resistance, water retention, and mechanical properties. Here, a cost-effective and efficient strategy for in situ rapid synthesis of hydrogels with Mo<sub>2</sub>C-derived molybdenum polyoxometalates (POM) is developed. The Mo-POM/ammonium persulfate (APS) redox pair enables rapid initiation of in situ free radical polymerization at room temperature, effectively addressing the limitations associated with conventional photo- or thermally-initiated methods. The tunable redox activity of Mo-POM allows precise control of polymerization time. This synthesis strategy utilizes the “freezing effect” achieved through rapid polymerization to achieve a uniform distribution of hydrogel components. Additionally, the incorporation of Mo-POM and sodium alginate (SA) introduces diverse intermolecular interactions within the hydrogel network, significantly enhancing mechanical properties. LiCl incorporation provides exceptional frost resistance, water retention, durability, and stability even under prolonged load cycling. Furthermore, the hydrogel demonstrates outstanding electromechanical properties, reliably and rapidly responding to both large and subtle motions. This tunable synthesis strategy successfully balances mechanical and electromechanical performance, antifreeze capability, water retention, and durability. Consequently, it offers a promising approach for large-scale, cost-effective industrial production of high-performance hydrogels.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"10 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143713690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Farnaz Fahimi Hanzaee, Ivan B. Dimov, Luke W. Gatecliff, Richard H. Bayford, George G. Malliaras, Andreas Demosthenous, Nick de N. Donaldson
Organic electrochemical transistors (OECTs) are attractive devices, particularly for biomedical applications. The inherent quality of OECTs in amplifying signals, combined with the possibility of directly interfacing with biological tissue, make them unique candidates to replace recording electrodes with the added advantage of providing on-site amplification (and thus allowing them to be counted as active electrodes). While most amplifiers using OECTs are transconductance amplifiers, having voltage-to-voltage amplification is more desirable in many applications to make the output compatible with any downstream conditioning circuit. Differential recording of physiological signals has the benefit of rejecting the common-mode noise sourcing from the environment or the body itself while amplifying the desired signal. Here the considerations for and challenges of designing an OECT-based differential amplifier are discussed and a three-transistor amplifier is proposed that can provide a common-mode rejection ratio of up to ≈20 dB. To demonstrate its advantage, a differential amplifier is used to record ECG signals from a human volunteer, and the collected data is compared with recordings from a Wheatstone bridge OECT amplifier, showing the improved signal-to-noise ratio, gain, and power consumption.
{"title":"A Single-Stage Differential Amplifier Using Organic Electrochemical Transistors","authors":"Farnaz Fahimi Hanzaee, Ivan B. Dimov, Luke W. Gatecliff, Richard H. Bayford, George G. Malliaras, Andreas Demosthenous, Nick de N. Donaldson","doi":"10.1002/aelm.202400755","DOIUrl":"https://doi.org/10.1002/aelm.202400755","url":null,"abstract":"Organic electrochemical transistors (OECTs) are attractive devices, particularly for biomedical applications. The inherent quality of OECTs in amplifying signals, combined with the possibility of directly interfacing with biological tissue, make them unique candidates to replace recording electrodes with the added advantage of providing on-site amplification (and thus allowing them to be counted as active electrodes). While most amplifiers using OECTs are transconductance amplifiers, having voltage-to-voltage amplification is more desirable in many applications to make the output compatible with any downstream conditioning circuit. Differential recording of physiological signals has the benefit of rejecting the common-mode noise sourcing from the environment or the body itself while amplifying the desired signal. Here the considerations for and challenges of designing an OECT-based differential amplifier are discussed and a three-transistor amplifier is proposed that can provide a common-mode rejection ratio of up to ≈20 dB. To demonstrate its advantage, a differential amplifier is used to record ECG signals from a human volunteer, and the collected data is compared with recordings from a Wheatstone bridge OECT amplifier, showing the improved signal-to-noise ratio, gain, and power consumption.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"61 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143713692","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Polymer semiconductors hold great potential as active materials in (opto)electronic, thermoelectric, and biomedical devices. Their charge transport performance has seen tremendous progress, with mobilities exceeding 1 cm2 V−1 s−1 for a variety of donor-acceptor copolymers. Nevertheless, charge injection at the metal/polymer interface is still rather ineffective and poorly understood. In a field-effect transistor, this process is manifested by the contact resistance (Rc) which, for polymers, is several orders of magnitude higher than for their inorganic counterparts. Therefore, an in-depth investigation of the charge injection in metal/donor-acceptor polymer systems is sought-after. Here, the low-temperature dependent Rc and charge transport of a model isoindigo donor-acceptor copolymer-based transistor are studied. The metal/polymer interface is tuned by functionalizing the electrodes with different thiolated self-assembled monolayers (SAMs). Rc in devices with SAM-functionalized electrodes is generally lower and exhibited a weak temperature dependence. Counterintuitively, electrodes functionalized with SAMs expected to lead to an apparently unfavorable energy level alignment displayed the lowest Rc. The Fermi level is found to be pinned at all the encompassed interfaces. An energy-level alignment modeling is employed to understand this behavior. The findings reveal that simply looking at the energy levels alignment of metal/polymer interface does not necessarily lead to reduced Rc.
{"title":"Charge Injection and Transport in an Isoindigo-Based Polymer Transistor","authors":"Zuchong Yang, Daniele Zucchelli, Melissa Berteau-Rainville, Qi Wang, Sydney Mikulin, Ingo Salzmann, Steffen Duhm, Fabrizio Torricelli, Emanuele Orgiu","doi":"10.1002/aelm.202500098","DOIUrl":"https://doi.org/10.1002/aelm.202500098","url":null,"abstract":"Polymer semiconductors hold great potential as active materials in (opto)electronic, thermoelectric, and biomedical devices. Their charge transport performance has seen tremendous progress, with mobilities exceeding 1 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> for a variety of donor-acceptor copolymers. Nevertheless, charge injection at the metal/polymer interface is still rather ineffective and poorly understood. In a field-effect transistor, this process is manifested by the contact resistance (<i>R</i><sub>c</sub>) which, for polymers, is several orders of magnitude higher than for their inorganic counterparts. Therefore, an in-depth investigation of the charge injection in metal/donor-acceptor polymer systems is sought-after. Here, the low-temperature dependent <i>R</i><sub>c</sub> and charge transport of a model isoindigo donor-acceptor copolymer-based transistor are studied. The metal/polymer interface is tuned by functionalizing the electrodes with different thiolated self-assembled monolayers (SAMs). <i>R</i><sub>c</sub> in devices with SAM-functionalized electrodes is generally lower and exhibited a weak temperature dependence. Counterintuitively, electrodes functionalized with SAMs expected to lead to an apparently unfavorable energy level alignment displayed the lowest <i>R</i><sub>c</sub>. The Fermi level is found to be pinned at all the encompassed interfaces. An energy-level alignment modeling is employed to understand this behavior. The findings reveal that simply looking at the energy levels alignment of metal/polymer interface does not necessarily lead to reduced <i>R</i><sub>c</sub>.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"14 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143695080","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chubin Huang, Abhishek Rakshit, Gianluca Janka, Zaher Salman, Andreas Suter, Thomas Prokscha, Benjamin A. Frandsen, Yoav Kalcheim
The coupling between structural, electronic and magnetic degrees of freedom across the metal-insulator transition in V2O3 makes it hard to determine the main driving mechanism behind the transition. Specifically, the role of magnetism is debated and its interplay with the other transitions has not been established. To address this issue, this work uses a combination of muon spin relaxation/rotation, electrical transport and reciprocal space mapping which allows to correlate magnetic, electronic and structural degrees of freedom in strain-engineered V2O3 thin films. Evidence is found for a magnetic instability in the vicinity of the structural transition. This is manifested as a decrease in the antiferromagnetic moment in proximity to the structural and electronic transitions. Moreover, this work finds evidence for an onset of antiferromagnetic (AF) fluctuations in the rhombohedral phase even without a structural transition to the monoclinic phase. In samples where the transition is most strongly suppressed by strain, a depth-dependent magnetic state is observed. These results reveal the importance of an AF instability in the paramagnetic phase in triggering the metal-insulator transition and the crucial role of the structural transition in allowing for the formation of an ordered AF state.
{"title":"Magnetic Precursor to the Structural Phase Transition in V2O3","authors":"Chubin Huang, Abhishek Rakshit, Gianluca Janka, Zaher Salman, Andreas Suter, Thomas Prokscha, Benjamin A. Frandsen, Yoav Kalcheim","doi":"10.1002/aelm.202500028","DOIUrl":"https://doi.org/10.1002/aelm.202500028","url":null,"abstract":"The coupling between structural, electronic and magnetic degrees of freedom across the metal-insulator transition in V<sub>2</sub>O<sub>3</sub> makes it hard to determine the main driving mechanism behind the transition. Specifically, the role of magnetism is debated and its interplay with the other transitions has not been established. To address this issue, this work uses a combination of muon spin relaxation/rotation, electrical transport and reciprocal space mapping which allows to correlate magnetic, electronic and structural degrees of freedom in strain-engineered V<sub>2</sub>O<sub>3</sub> thin films. Evidence is found for a magnetic instability in the vicinity of the structural transition. This is manifested as a decrease in the antiferromagnetic moment in proximity to the structural and electronic transitions. Moreover, this work finds evidence for an onset of antiferromagnetic (AF) fluctuations in the rhombohedral phase even without a structural transition to the monoclinic phase. In samples where the transition is most strongly suppressed by strain, a depth-dependent magnetic state is observed. These results reveal the importance of an AF instability in the paramagnetic phase in triggering the metal-insulator transition and the crucial role of the structural transition in allowing for the formation of an ordered AF state.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"97 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143678265","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mathias Polz, Konrad Binter, Kaila M. Yallum, Thomas Rath, Marta Nowakowska‐Desplantes, Christa Schimpel, Gerhard Sommer, Nassim Ghaffari‐Tabrizi‐Wizsy, Natalie Banerji, Gregor Trimmel, Theresa Rienmüller
Organic photovoltaics show great potential for wireless bioelectronics, offering the ability to convert visible‐to‐near‐infrared light into electrical energy. This study investigates the stability and biocompatibility of PM6:Y6 bulk heterojunction layers, chosen for their efficient charge separation and absorption profile compatible with the optical transparency of skin tissue, under simulated physiological conditions. Biocompatibility is validated using the chicken chorioallantoic membrane and cytotoxicity assays with primary neurons, showing no adverse effects on cell viability or morphology. The layers demonstrated stable photoinduced charge separation over 28 days in electrolytic environments with a significant voltage increase of ≈40 mV after one day. The addition of a PM6 overlayer improved voltage responses and reduced swelling, possibly acting as a selective barrier, however, leading to a decrease in the achievable peak current densities over time. Atomic force microscopy and transient absorption spectroscopy confirmed the structural and functional stability of the films, with almost unaffected charge generation and recombination rates in aqueous environments. The PM6 layer slowed charge formation due to increased diffusion lengths. These findings underscore the PM6:Y6 blend‘s potential for use in bioelectronics. Future studies should examine PM6:Y6 performance in vivo conditions and focus on an improved understanding of interaction mechanisms with biological systems.
{"title":"Are PM6:Y6 Bulk Heterojunction Photoactive Films Cytocompatible and Electrically Stable in Biological Environments?","authors":"Mathias Polz, Konrad Binter, Kaila M. Yallum, Thomas Rath, Marta Nowakowska‐Desplantes, Christa Schimpel, Gerhard Sommer, Nassim Ghaffari‐Tabrizi‐Wizsy, Natalie Banerji, Gregor Trimmel, Theresa Rienmüller","doi":"10.1002/aelm.202400899","DOIUrl":"https://doi.org/10.1002/aelm.202400899","url":null,"abstract":"Organic photovoltaics show great potential for wireless bioelectronics, offering the ability to convert visible‐to‐near‐infrared light into electrical energy. This study investigates the stability and biocompatibility of PM6:Y6 bulk heterojunction layers, chosen for their efficient charge separation and absorption profile compatible with the optical transparency of skin tissue, under simulated physiological conditions. Biocompatibility is validated using the chicken chorioallantoic membrane and cytotoxicity assays with primary neurons, showing no adverse effects on cell viability or morphology. The layers demonstrated stable photoinduced charge separation over 28 days in electrolytic environments with a significant voltage increase of ≈40 mV after one day. The addition of a PM6 overlayer improved voltage responses and reduced swelling, possibly acting as a selective barrier, however, leading to a decrease in the achievable peak current densities over time. Atomic force microscopy and transient absorption spectroscopy confirmed the structural and functional stability of the films, with almost unaffected charge generation and recombination rates in aqueous environments. The PM6 layer slowed charge formation due to increased diffusion lengths. These findings underscore the PM6:Y6 blend‘s potential for use in bioelectronics. Future studies should examine PM6:Y6 performance in vivo conditions and focus on an improved understanding of interaction mechanisms with biological systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"183 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143677828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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