Advanced Electronic Materials最新文献

Personalized health management aims to promote, maintain, and restore the health of individuals. Despite the ever-lasting research efforts involved in personalized healthcare bioelectronics, current healthcare platforms still face barriers such as costly facilities, specialized operations, and resource-limited applications. Therefore, personalized and user-friendly healthcare bioelectronics are urgently needed. Among emerging solutions, the integration of artificial intelligence (AI) and advanced bioelectronics is a pivotal approach that merges intelligent algorithms with multi-functional healthcare design. This review summarizes the latest advances in AI-assisted bioelectronics, aiming to provide a possible strategy for personalized healthcare applications. Initially, a brief survey is provided to discuss the material design, device fabrication, AI-hardware integration, and performance assessment of AI-assisted bioelectronics. The subsequent contents focus on the implementation of AI-assisted healthcare bioelectronics across health monitoring, early diagnosis, therapeutic treatment, and rehabilitation. Finally, we discuss the current challenges and prospective future developments in closed-loop healthcare bioelectronics, ultimately empowering individuals with control over their own health.

A field plate is a grounded metal layer underneath the source electrode in thin-film transistors (TFTs) and was found to significantly reduce pinch-off voltage and enhance intrinsic gain (up to 320) of inkjet-printed organic TFTs. The operating mechanism was investigated through automated fabrication and statistical analysis of over 3000 devices with various channel length (L) and field plate length (L_fp​). Crucially, in the saturation regime, transconductance and drain current were governed by L_fp​ rather than L. We propose and validate a new theoretical model, supported by device simulations, which demonstrates that pinch-off occurs not at the drain or source, but at the edge of the field plate. This novel mechanism explains the observed low pinch-off voltage and suggests that device performance can be improved through miniaturization, offering a key advantage over conventional high-gain architectures like source-gated transistors. In addition, the field plate enables to control pinch-off voltage simply by layout change, providing functional versatility. Finally, a compact model was developed to facilitate the design of high-performance printed analog circuits, highlighting the potential of these devices for future flexible electronics.

Silicon carbide (SiC) power devices possess exceptional electrical and thermal properties, making them strong candidates for deployment in extreme environments such as space. However, displacement damage induced by high-energy particles remains a critical factor that can compromise long-term reliability, underscoring the need for accurate defect characterization. Conventional C–V doping-profile extraction uses numerical differentiation, which amplifies measurement noise and reduces accuracy and reproducibility. We present an analytical model that removes numerical differentiation by using the ratio of C–V characteristics measured before and after irradiation. This approach enables direct, stable, quantitative extraction of net radiation-induced trap density. To validate the method, we irradiate 4H-SiC Schottky barrier diodes with 55 MeV protons at a fluence of 1 × 10¹⁴ cm⁻² and compare the extracted trap densities with those from the conventional differentiation-based technique to assess consistency and robustness. Furthermore, based on the extracted trap-density profiles, we introduce a formula for determining an effective trap energy level parameter, which serves as a diagnostic indicator for identifying the dominant displacement-damage mechanisms under high-energy proton irradiation. The proposed analytical model operates at room temperature, requires standard C–V measurements, and serves as a fast, accurate tool for screening displacement damage effects in SiC power devices.

Transition metal–rare earth compounds are promising synthetic ferrimagnets for next-generation spintronic devices, where magnetic domain structure and thermal evolution are key to performance. We studied ultrathin Fe–Gd ferrimagnets grown epitaxially on W(110) by atomic layer deposition, combining element-resolved magnetic microscopy with structural characterization. Comparing Gd/Fe and Fe/Gd bilayers with homogeneous Fe_{1 − x}Gd_x alloys, we find that Curie temperature (T_c) and domain behavior are governed primarily by crystallinity and interfacial coupling. In crystalline Gd/Fe, the Gd layer remains ferromagnetic up to ∼500 K, far above its bulk T_c, due to strong interfacial coupling. In contrast, poor crystallinity of the Fe layer in Fe/Gd suppresses Fe magnetic order, yielding a reduced common T_c of ∼325 K, similar to the homogeneous alloy (T_c ∼ 345 K). Atomistic spin simulations capture these trends and isolate the role of disorder. Together, these results demonstrate how structural control can be used to tune Curie and compensation temperatures in ultrathin ferrimagnetic heterostructures for ultrafast, energy-efficient spintronic applications.

Ferroelectric Memory

In their Research Article (10.1002/aelm.202500451), Hiroshi Funakubo and co-workers demonstrate that the total thickness of the device stack can be scaled down to 30 nm for the first time while maintaining a remanent polarization exceeding 100 μC cm⁻² using an aluminum scandium nitride ((Al,Sc)N) film sandwiched between Pt electrodes. This next-generation nitride ferroelectric material enables aggressive thickness scaling for integration into ferroelectric memory, representing a significant advance for future electronic devices.

Neuromorphic Devices

This cover image presents a high-fidelity multimodal optoelectronic transistor, highlighting the incorporation of a composite gate to realize reversible and real-time modulation of photogenerated carrier relaxation. Preliminary simulations illustrate the device's proficiency in high-fidelity optical pulse sequence recognition and clock recovery when integrated into optical communication interfaces. More information can be found in the Research Article by Changjian Zhou and co-workers (10.1002/aelm.202500580).

In our original publication, “Magnetic field screening of 2D materials revealed by magnetic force microscopy,” we demonstrated that few-layer graphene (FLG) exhibits a measurable magnetic field screening effect of approximately 0.5% per graphene layer, as revealed by magnetic force microscopy (MFM). Here, we focus on the broader implications of this phenomenon for devices employing FLG as electrodes in van der Waals heterostructures. We highlight that the cumulative diamagnetic screening of FLG can substantially reduce the effective magnetic field experienced by the active region of a device, which must be considered for accurate quantitative interpretation of magnetic field-dependent measurements. This Addendum clarifies how FLG's intrinsic diamagnetism can influence quantitative analyses and theoretical comparisons, while leaving the qualitative conclusions of our original study unaffected.