In article number 2300677, Zhenhu Jin, Jiamin Chen, and co-workers explore the emerging field of flexible magnetic smart skin, a key element in the realm of wearable electronics. These flexible devices offer biocompatibility, versatility, and a low cost, creating new opportunities for human perception and interaction with magnetic fields. The review discusses magnetoelastomers and flexible magnetic sensors, and addresses the current landscape and challenges in the development of magnetic smart skin for human–machine interfaces.
{"title":"A Review on Magnetic Smart Skin as Human–Machine Interfaces (Adv. Electron. Mater. 5/2024)","authors":"Junjie Zhang, Guangyuan Chen, Zhenhu Jin, Jiamin Chen","doi":"10.1002/aelm.202470018","DOIUrl":"https://doi.org/10.1002/aelm.202470018","url":null,"abstract":"<p><b>Magnetic Smart Skin</b></p><p>In article number 2300677, Zhenhu Jin, Jiamin Chen, and co-workers explore the emerging field of flexible magnetic smart skin, a key element in the realm of wearable electronics. These flexible devices offer biocompatibility, versatility, and a low cost, creating new opportunities for human perception and interaction with magnetic fields. The review discusses magnetoelastomers and flexible magnetic sensors, and addresses the current landscape and challenges in the development of magnetic smart skin for human–machine interfaces.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202470018","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140902672","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Minseung Kang, Ung Cho, Jaehyeon Kang, Narae Han, Hyeong Jun Seo, Jee-Eun Yang, Seokyeon Shin, Taehyun Kim, Sangwook Kim, Changwook Jeong, Sangbum Kim
Charge storage synaptic circuits employing InGaZnO thin-film transistors (IGZO TFTs) and capacitors are a promising candidate for on-chip trainable neural network hardware accelerators. However, IGZO TFTs often exhibit bias instability. For synaptic memory applications, the programming transistors are predominantly exposed to asymmetric off-state biases, and a unique field-dependent on-current reduction under off-scenario is observed which may result in programming current variation. Further examination of the phenomenon is conducted with transmission line-like method and degradation recovery tests, and current reduction can be attributed to contact resistance increase by charge trapping in the source and drain electrode and the channel region. The current decrease is subsequently formulated with a stretched exponential model with bias-dependent parameters for quantitative circuit analysis under off-state degradation. A neural network hardware acceleration simulator is utilized to assess the complicated impact the off-state current degradation could instigate on on-chip trainable IGZO TFT-based synapse arrays. The simulation results generally demonstrate deteriorated training accuracy with aggravated off-state instability, and the accuracy trend is elucidated from the perspective of weight symmetry point.
{"title":"Field Induced Off-State Instability in InGaZnO Thin-Film Transistor and its Impact on Synaptic Circuits","authors":"Minseung Kang, Ung Cho, Jaehyeon Kang, Narae Han, Hyeong Jun Seo, Jee-Eun Yang, Seokyeon Shin, Taehyun Kim, Sangwook Kim, Changwook Jeong, Sangbum Kim","doi":"10.1002/aelm.202300900","DOIUrl":"https://doi.org/10.1002/aelm.202300900","url":null,"abstract":"Charge storage synaptic circuits employing InGaZnO thin-film transistors (IGZO TFTs) and capacitors are a promising candidate for on-chip trainable neural network hardware accelerators. However, IGZO TFTs often exhibit bias instability. For synaptic memory applications, the programming transistors are predominantly exposed to asymmetric off-state biases, and a unique field-dependent on-current reduction under off-scenario is observed which may result in programming current variation. Further examination of the phenomenon is conducted with transmission line-like method and degradation recovery tests, and current reduction can be attributed to contact resistance increase by charge trapping in the source and drain electrode and the channel region. The current decrease is subsequently formulated with a stretched exponential model with bias-dependent parameters for quantitative circuit analysis under off-state degradation. A neural network hardware acceleration simulator is utilized to assess the complicated impact the off-state current degradation could instigate on on-chip trainable IGZO TFT-based synapse arrays. The simulation results generally demonstrate deteriorated training accuracy with aggravated off-state instability, and the accuracy trend is elucidated from the perspective of weight symmetry point.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140890062","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Taehoon Park, Seokho Seo, Yujin Kim, See-On Park, Soobin Choi, Seokman Hong, Hakcheon Jeong, Shinhyun Choi
The emergence of technologies such as Artificial Intelligence (AI) and the Internet of Things (IoT) has ushered in the era of big data. The demand for low-power hardware systems and efficient algorithms has become more imperative. In this study, an ultra-low-power dynamic memtransistor based on the charge storage junction Field-Effect Transistor (FET) with a step-wise potential barrier is developed. A simple yet efficient device structure allows for analog programming and spontaneous relaxation. The device demonstrated fast speed (tens of nanoseconds (ns)) and low current (in picoamperes (pA)), resulting in ultra-low programming power (in attojoules (aJ)). Furthermore, the device exhibited high reliability, with a 0.4% cycle-to-cycle variation and endurance over 107 pulses, owing to its non-structural destructive operation process. An operation scheme is developed that enables read on/off and program/inhibition mode for 2T (1 memtransistor-1 selecting transistor) array. The capability to distinguish temporal data using the device's spontaneous relaxation characteristics is demonstrated. A reservoir computing (RC) system framework is constructed using simulation and verified that the dynamic memtransistor can extract features efficiently from a hand-written digit dataset. It is anticipated that the developed dynamic memtransistor, with its distinctive temporal characteristics, will play a pivotal role in developing a novel low-power computing framework.
{"title":"Ultra-Low Power and Reliable Dynamic Memtransistor Based on Charge Storage Junction FET with Step-Wise Potential Barrier for Energy-Efficient Edge Computing Framework","authors":"Taehoon Park, Seokho Seo, Yujin Kim, See-On Park, Soobin Choi, Seokman Hong, Hakcheon Jeong, Shinhyun Choi","doi":"10.1002/aelm.202300904","DOIUrl":"https://doi.org/10.1002/aelm.202300904","url":null,"abstract":"The emergence of technologies such as Artificial Intelligence (AI) and the Internet of Things (IoT) has ushered in the era of big data. The demand for low-power hardware systems and efficient algorithms has become more imperative. In this study, an ultra-low-power dynamic memtransistor based on the charge storage junction Field-Effect Transistor (FET) with a step-wise potential barrier is developed. A simple yet efficient device structure allows for analog programming and spontaneous relaxation. The device demonstrated fast speed (tens of nanoseconds (ns)) and low current (in picoamperes (pA)), resulting in ultra-low programming power (in attojoules (aJ)). Furthermore, the device exhibited high reliability, with a 0.4% cycle-to-cycle variation and endurance over 10<sup>7</sup> pulses, owing to its non-structural destructive operation process. An operation scheme is developed that enables read on/off and program/inhibition mode for 2T (1 memtransistor-1 selecting transistor) array. The capability to distinguish temporal data using the device's spontaneous relaxation characteristics is demonstrated. A reservoir computing (RC) system framework is constructed using simulation and verified that the dynamic memtransistor can extract features efficiently from a hand-written digit dataset. It is anticipated that the developed dynamic memtransistor, with its distinctive temporal characteristics, will play a pivotal role in developing a novel low-power computing framework.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140890117","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Fida Ali, Hyungyu Choi, Nasir Ali, Yasir Hassan, Tien Dat Ngo, Faisal Ahmed, Won-Kyu Park, Zhipei Sun, Won Jong Yoo
The pursuit of near-ideal subthreshold swing (SS) ≈ 60 mV dec−1 is a primary driving force to realize the power-efficient field-effect transistors (FETs). This challenge is particularly pronounced in 2D material-based FETs, where the presence of a large interface trap density (Dit) imposes limitations on electrostatic control, consequently escalating power consumption. In this study, the gate controllability of 2D FETs is systematically analyzed by fabricating pre-patterned van der Waals (vdW)-contacted p-FETs, varying the WSe2 channel thickness from monolayer to ten-layer. As a result, the channel thickness is optimized to achieve efficient gate controllability while minimizing Dit. The findings demonstrate negligible hysteresis and excellent subthreshold swing (SSmin) close to the thermal limit (≈60 mV dec−1), with a corresponding Dit of ≈1010 cm−2 eV−1, comparable to Dit values observed in state-of-the-art Si transistors, when utilizing WSe2 channel thicknesses ≥ five-layer. However, reducing the WSe2 channel thickness below the trilayer, SSmin (≈91 mV dec−1) deviates from the thermal limit, attributed to a comparatively higher Dit (≈1011 cm−2 eV−1), despite the still lower than values reported for surface-contacted 2D transistors. Furthermore, all devices exhibit consistent p-type characteristics, featuring a high ION/IOFF ratio, high mobility, and excellent electrical stability confirmed over several months.
追求接近理想的阈下摆幅（SS）≈ 60 mV dec-1是实现高能效场效应晶体管（FET）的主要动力。这一挑战在基于二维材料的场效应晶体管中尤为突出，因为大量界面陷阱密度（Dit）的存在限制了静电控制，从而导致功耗上升。在本研究中，通过制造预图案化的范德华（vdW）接触 p 型场效应晶体管，改变 WSe2 沟道厚度（从单层到十层），系统分析了二维场效应晶体管的栅极可控性。因此，沟道厚度得到了优化，从而实现了高效的栅极可控性，同时将 Dit 降到了最低。研究结果表明，当使用的 WSe2 沟道厚度≥ 5 层时，可忽略的滞后和接近热极限（≈60 mV dec-1）的出色阈下摆幅（SSmin），以及相应的 Dit ≈1010 cm-2 eV-1，与最先进的硅晶体管中观察到的 Dit 值相当。然而，当 WSe2 沟道厚度减小到三层以下时，SSmin（≈91 mV dec-1）偏离了热极限，这归因于相对较高的 Dit（≈1011 cm-2 eV-1），尽管仍低于表面接触式二维晶体管的报告值。此外，所有器件都表现出一致的 p 型特性，具有高 ION/IOFF 比、高迁移率和卓越的电稳定性，并经过数月验证。
{"title":"Achieving Near-Ideal Subthreshold Swing in P-Type WSe2 Field-Effect Transistors","authors":"Fida Ali, Hyungyu Choi, Nasir Ali, Yasir Hassan, Tien Dat Ngo, Faisal Ahmed, Won-Kyu Park, Zhipei Sun, Won Jong Yoo","doi":"10.1002/aelm.202400071","DOIUrl":"https://doi.org/10.1002/aelm.202400071","url":null,"abstract":"The pursuit of near-ideal subthreshold swing (<i>SS</i>) ≈ 60 mV dec<sup>−1</sup> is a primary driving force to realize the power-efficient field-effect transistors (FETs). This challenge is particularly pronounced in 2D material-based FETs, where the presence of a large interface trap density (<i>D<sub>it</sub></i>) imposes limitations on electrostatic control, consequently escalating power consumption. In this study, the gate controllability of 2D FETs is systematically analyzed by fabricating pre-patterned van der Waals (vdW)-contacted p-FETs, varying the WSe<sub>2</sub> channel thickness from monolayer to ten-layer. As a result, the channel thickness is optimized to achieve efficient gate controllability while minimizing <i>D<sub>it</sub></i>. The findings demonstrate negligible hysteresis and excellent subthreshold swing (<i>SS<sub>min</sub></i>) close to the thermal limit (≈60 mV dec<sup>−1</sup>), with a corresponding <i>D<sub>it</sub></i> of ≈10<sup>10</sup> cm<sup>−2</sup> eV<sup>−1</sup>, comparable to <i>D<sub>it</sub></i> values observed in state-of-the-art Si transistors, when utilizing WSe<sub>2</sub> channel thicknesses ≥ five-layer. However, reducing the WSe<sub>2</sub> channel thickness below the trilayer, <i>SS<sub>min</sub></i> (≈91 mV dec<sup>−1</sup>) deviates from the thermal limit, attributed to a comparatively higher <i>D<sub>it</sub></i> (≈10<sup>11</sup> cm<sup>−2</sup> eV<sup>−1</sup>), despite the still lower than values reported for surface-contacted 2D transistors. Furthermore, all devices exhibit consistent p-type characteristics, featuring a high I<sub>ON</sub>/I<sub>OFF</sub> ratio, high mobility, and excellent electrical stability confirmed over several months.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140890155","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sherina Harilal, Sumesh Sadhujan, Kefan Zhang, Awad Shalabny, Francesco Buonocore, Barbara Ferrucci, Simone Giusepponi, Massimo Celino, Muhammad Y. Bashouti
The termination of surface-dangling bonds on silicon through hydrogen atoms, also known as Si–H, can achieve chemical passivation and reduce surface states in the electronic bandgap, thus altering electronic properties. Through a comprehensive study of doping levels (1014–1020 cm−3) and types (n and p), a consistent surface dipole trend induced by Si–H termination is discovered. It is achieved by redistributing surface charges and establishing thermal equilibrium with the chemical bond. To resolve this, the surface work function, surface electron affinity, and the energy difference between the valence band and the Fermi level are measured by employing the Kelvin probe, X-ray photoelectron spectroscopy, and photoelectron yield spectroscopy methods. These findings are further validated through ab initio simulations. This finding has immense implications not only for eliminating electronic defects at semiconductor interfaces, which is crucial in microelectronics but also for developing and engineering hybrid interfaces and heterojunctions with controlled electronic properties.
通过氢原子（也称为 Si-H）终止硅的表面偶极键可以实现化学钝化，减少电子带隙中的表面态，从而改变电子特性。通过对掺杂水平（1014-1020 cm-3）和类型（n 和 p）的全面研究，我们发现了 Si-H 终止诱导的一致的表面偶极趋势。它是通过重新分配表面电荷并与化学键建立热平衡来实现的。为了解决这个问题，我们采用开尔文探针、X 射线光电子能谱和光电子产率光谱等方法测量了表面功函数、表面电子亲和力以及价带和费米级之间的能差。这些发现通过 ab initio 模拟得到了进一步验证。这一发现不仅对消除半导体界面上的电子缺陷（这在微电子学中至关重要）具有重大意义，而且对开发和设计具有可控电子特性的混合界面和异质结也具有重大意义。
{"title":"Uniform Tendency of Surface Dipoles Across Silicon Doping Levels and Types of H-Terminated Surfaces","authors":"Sherina Harilal, Sumesh Sadhujan, Kefan Zhang, Awad Shalabny, Francesco Buonocore, Barbara Ferrucci, Simone Giusepponi, Massimo Celino, Muhammad Y. Bashouti","doi":"10.1002/aelm.202300873","DOIUrl":"https://doi.org/10.1002/aelm.202300873","url":null,"abstract":"The termination of surface-dangling bonds on silicon through hydrogen atoms, also known as Si–H, can achieve chemical passivation and reduce surface states in the electronic bandgap, thus altering electronic properties. Through a comprehensive study of doping levels (10<sup>14</sup>–10<sup>20</sup> cm<sup>−3</sup>) and types (n and p), a consistent surface dipole trend induced by Si–H termination is discovered. It is achieved by redistributing surface charges and establishing thermal equilibrium with the chemical bond. To resolve this, the surface work function, surface electron affinity, and the energy difference between the valence band and the Fermi level are measured by employing the Kelvin probe, X-ray photoelectron spectroscopy, and photoelectron yield spectroscopy methods. These findings are further validated through ab initio simulations. This finding has immense implications not only for eliminating electronic defects at semiconductor interfaces, which is crucial in microelectronics but also for developing and engineering hybrid interfaces and heterojunctions with controlled electronic properties.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140895800","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Heorhii Bohuslavskyi, Kestutis Grigoras, Mário Ribeiro, Mika Prunnila, Sayani Majumdar
Low‐power nonvolatile memories operating down to deep cryogenic temperatures are important for a large spectrum of applications from high‐performance computing, electronics interfacing quantum computing hardware to space‐based electronics. Despite the potential of Hf0.5Zr0.5O2 (HZO), thanks to its compatibility with complementary metal‐oxide‐semiconductor (CMOS) back‐end‐of‐line processing, only few studies of HZO‐based memory devices down to cryogenic operation temperatures exist. Here, analog ferroelectric memory stack fabrication with 10 nm HZO and their detailed characterization under wide range of pulse amplitudes and frequencies down to 4 K are reported. When operated at temperatures below 100 K, HZO devices can support high amplitude voltage pulses, yielding record high Pr of up to 75µC cm−2 at ±7 Vp (14 Vpp) pulse amplitudes accompanied with frequency‐dependent memory window between 6 and 8 V. Devices show excellent endurance exceeding 109 cycles of ±5 Vp (10 Vpp) and Pr of 30 µC cm−2 without significant degradation of coercive voltages or loss of polarization at cryogenic temperatures. At least 20 reproducible analog states for temperatures below 100 K with almost ideal linearity of intermediate polarization states in both pulse directions is observed, demonstrating the high potential of analog cryogenic ferroelectric memories, essential for on‐line training in in‐memory‐computing architecture.
{"title":"Ferroelectric Hf0.5Zr0.5O2 for Analog Memory and In‐Memory Computing Applications Down to Deep Cryogenic Temperatures","authors":"Heorhii Bohuslavskyi, Kestutis Grigoras, Mário Ribeiro, Mika Prunnila, Sayani Majumdar","doi":"10.1002/aelm.202300879","DOIUrl":"https://doi.org/10.1002/aelm.202300879","url":null,"abstract":"Low‐power nonvolatile memories operating down to deep cryogenic temperatures are important for a large spectrum of applications from high‐performance computing, electronics interfacing quantum computing hardware to space‐based electronics. Despite the potential of Hf<jats:sub>0.5</jats:sub>Zr<jats:sub>0.5</jats:sub>O<jats:sub>2</jats:sub> (HZO), thanks to its compatibility with complementary metal‐oxide‐semiconductor (CMOS) back‐end‐of‐line processing, only few studies of HZO‐based memory devices down to cryogenic operation temperatures exist. Here, analog ferroelectric memory stack fabrication with 10 nm HZO and their detailed characterization under wide range of pulse amplitudes and frequencies down to 4 K are reported. When operated at temperatures below 100 K, HZO devices can support high amplitude voltage pulses, yielding record high <jats:italic>P</jats:italic><jats:sub>r</jats:sub> of up to 75µC cm<jats:sup>−2</jats:sup> at ±7 V<jats:sub>p</jats:sub> (14 V<jats:sub>pp</jats:sub>) pulse amplitudes accompanied with frequency‐dependent memory window between 6 and 8 V. Devices show excellent endurance exceeding 10<jats:sup>9</jats:sup> cycles of ±5 V<jats:sub>p</jats:sub> (10 V<jats:sub>pp</jats:sub>) and <jats:italic>P</jats:italic><jats:sub>r</jats:sub> of 30 µC cm<jats:sup>−2</jats:sup> without significant degradation of coercive voltages or loss of polarization at cryogenic temperatures. At least 20 reproducible analog states for temperatures below 100 K with almost ideal linearity of intermediate polarization states in both pulse directions is observed, demonstrating the high potential of analog cryogenic ferroelectric memories, essential for on‐line training in in‐memory‐computing architecture.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140845623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Solution-processed inorganic perovskites cause chemical and structural defects unfavorable for photodetector application. Using a binary solvent, defects in CsPbIxBry (CPIB) perovskite are passivated with poly 4-vinylpyridine (PVP) and Poly methyl methacrylate (PMMA) polymers. X-ray photoelectron spectroscopy and FTIR spectra reveal a Lewis base-acid interaction between Pb2+ and polymer, confirming the passivation of CPIB perovskite. Scanning electron microscopy analysis shows a dual-surface morphology with microribbons and microcrystals in perovskites. After PMMA treatment, CPIB perovskite exhibits a blue shift in the bandgap (1.8 to 1.95 eV), while the PVP induced a redshift, reducing the bandgap to 1.7 eV. Blue shift in PL analysis indicates modification of grain boundaries. A higher lifetime obtained for CPIB/PVP confirms the restraint of non-radiative recombinations. Photodetectors are fabricated with pristine CPIB, CPIB/PVP, and CPIB/PMMA perovskites. The passivated CPIB/PVP-based photodetector exhibits a quick rise time of ≈23 ms and a decay time of ≈17 ms. It also demonstrates a remarkable photoresponsivity of 23 mA W−1, an internal quantum efficiency of 4.9%, and a detectivity of 15.0 × 1010 Jones at 10 mW cm−2 light intensity. This approach shows the potential for environmentally stable polymers to passivate inorganic perovskites for high photodetection performance.
{"title":"Polymer Passivated All Inorganic Micro-Structured CsPbIxBry Perovskite Toward Highly Efficient Photodetectors","authors":"Shruti Shah, Ashvini Punde, Dhanashri Kale, Yogesh Hase, Somnath Ladhane, Swati Rahane, Vidya Doiphode, Pratibha Shinde, Ashish Waghmare, Bharat Bade, Sachin Rondiya, Mohit Prasad, Shashikant P. Patole, Sandesh Jadkar","doi":"10.1002/aelm.202400042","DOIUrl":"https://doi.org/10.1002/aelm.202400042","url":null,"abstract":"Solution-processed inorganic perovskites cause chemical and structural defects unfavorable for photodetector application. Using a binary solvent, defects in CsPbI<sub>x</sub>Br<sub>y</sub> (CPIB) perovskite are passivated with poly 4-vinylpyridine (PVP) and Poly methyl methacrylate (PMMA) polymers. X-ray photoelectron spectroscopy and FTIR spectra reveal a Lewis base-acid interaction between Pb<sup>2+</sup> and polymer, confirming the passivation of CPIB perovskite. Scanning electron microscopy analysis shows a dual-surface morphology with microribbons and microcrystals in perovskites. After PMMA treatment, CPIB perovskite exhibits a blue shift in the bandgap (1.8 to 1.95 eV), while the PVP induced a redshift, reducing the bandgap to 1.7 eV. Blue shift in PL analysis indicates modification of grain boundaries. A higher lifetime obtained for CPIB/PVP confirms the restraint of non-radiative recombinations. Photodetectors are fabricated with pristine CPIB, CPIB/PVP, and CPIB/PMMA perovskites. The passivated CPIB/PVP-based photodetector exhibits a quick rise time of ≈23 ms and a decay time of ≈17 ms. It also demonstrates a remarkable photoresponsivity of 23 mA W<sup>−1</sup>, an internal quantum efficiency of 4.9%, and a detectivity of 15.0 × 10<sup>10</sup> Jones at 10 mW cm<sup>−2</sup> light intensity. This approach shows the potential for environmentally stable polymers to passivate inorganic perovskites for high photodetection performance.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140821292","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Piotr Zawal, Gisya Abdi, Marlena Gryl, Dip Das, Andrzej Sławek, Emilie A. Gerouville, Marianna Marciszko-Wiąckowska, Mateusz Marzec, Grzegorz Hess, Dimitra G. Georgiadou, Konrad Szaciłowski
Memristors, being prospective work-horses of future electronics offer various types of memory (volatile and nonvolatile) along with specific computational functionalities. Further development of memristive technologies depends on the availability of suitable materials. These materials should be easily available, stable, and preferably of low toxicity. Commonly used materials are lead halide perovskites, however, they are highly toxic and unstable under ambient conditions. Therefore a novel material is developed on the basis of bismuth iodide. In reaction with butylammonium iodide, it yields a novel compound, butylammonium iodobismuthate (BABI). Here, a diffusive memristor is introduced based on this compound and evaluates its memristive and neuromorphic properties. In contrast to nonvolatile memristors, the BABI memristors exhibit diffusive dynamics, which enable them to store the information only for short periods of time. This property is utilized to mimic the short-term synaptic plasticity described by the leaky integrate-and-fire model of a biological neuron. Combined with high switching uniformity and self-rectifying behavior, these devices show high classification accuracy for MNIST handwritten datasets, paving the way for their application in neuromorphic computing systems.
{"title":"Leaky Integrate-and-Fire Model and Short-Term Synaptic Plasticity Emulated in a Novel Bismuth-Based Diffusive Memristor","authors":"Piotr Zawal, Gisya Abdi, Marlena Gryl, Dip Das, Andrzej Sławek, Emilie A. Gerouville, Marianna Marciszko-Wiąckowska, Mateusz Marzec, Grzegorz Hess, Dimitra G. Georgiadou, Konrad Szaciłowski","doi":"10.1002/aelm.202300865","DOIUrl":"https://doi.org/10.1002/aelm.202300865","url":null,"abstract":"Memristors, being prospective work-horses of future electronics offer various types of memory (volatile and nonvolatile) along with specific computational functionalities. Further development of memristive technologies depends on the availability of suitable materials. These materials should be easily available, stable, and preferably of low toxicity. Commonly used materials are lead halide perovskites, however, they are highly toxic and unstable under ambient conditions. Therefore a novel material is developed on the basis of bismuth iodide. In reaction with butylammonium iodide, it yields a novel compound, butylammonium iodobismuthate (BABI). Here, a diffusive memristor is introduced based on this compound and evaluates its memristive and neuromorphic properties. In contrast to nonvolatile memristors, the BABI memristors exhibit diffusive dynamics, which enable them to store the information only for short periods of time. This property is utilized to mimic the short-term synaptic plasticity described by the leaky integrate-and-fire model of a biological neuron. Combined with high switching uniformity and self-rectifying behavior, these devices show high classification accuracy for MNIST handwritten datasets, paving the way for their application in neuromorphic computing systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140819944","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Flexible thermoelectric generators are leading candidates for next-generation energy-harvesting devices. Although SiGe, an environmentally-friendly semiconductor, is the most reliable and widely tested thermoelectric material, it is difficult to form a SiGe layer with high thermoelectric performance at temperatures lower than the heat-proof temperature of flexible plastic films. In this article, the synthesis of SiGe thermoelectric thin films via the metal-induced layer exchange phenomenon is reviewed, from its mechanism to device performance. The selection of metal species allows low-temperature formation (≤500 °C) of p- and n-type SiGe on insulating substrates. Currently, the maximum power factors near room temperature are 850 µW m−1 K−2 for p-type Si0.4Ge0.6 and 1000 µW m−1 K−2 for n-type Si0.85Ge0.15. These values are the highest among those of Group IV semiconductor thin films formed at low temperatures. The flexible thermoelectric generator consisting of these p- and n-type SiGe exhibits cross-sectional and planar power densities of ≈3.0 mW cm−2 and 0.50 µW cm−2, respectively, at a temperature difference of 30 K. Finally, the future challenges of layer exchange for improving the performance of flexible thermoelectric generators based on Group IV semiconductors are discussed.
柔性热电发电机是下一代能量收集设备的主要候选材料。虽然 SiGe（一种环保半导体）是最可靠且经过广泛测试的热电材料，但要在低于柔性塑料薄膜耐热温度的条件下形成具有高热电性能的 SiGe 层却十分困难。本文回顾了通过金属诱导层交换现象合成 SiGe 热电薄膜的机理和器件性能。通过选择金属种类，可以在绝缘基底上低温（≤500 °C）形成 p 型和 n 型 SiGe。目前，p 型 Si0.4Ge0.6 在室温附近的最大功率因数为 850 µW m-1 K-2，n 型 Si0.85Ge0.15 为 1000 µW m-1 K-2。这些数值是在低温条件下形成的第 IV 组半导体薄膜中最高的。由这些 p 型和 n 型 SiGe 组成的柔性热电发生器在 30 K 温差下的横截面和平面功率密度分别为 ≈3.0 mW cm-2 和 0.50 µW cm-2。
{"title":"Layer Exchange Synthesis of SiGe for Flexible Thermoelectric Generators: A Comprehensive Review","authors":"Kaoru Toko, Shintaro Maeda, Takamitsu Ishiyama, Koki Nozawa, Masayuki Murata, Takashi Suemasu","doi":"10.1002/aelm.202400130","DOIUrl":"https://doi.org/10.1002/aelm.202400130","url":null,"abstract":"Flexible thermoelectric generators are leading candidates for next-generation energy-harvesting devices. Although SiGe, an environmentally-friendly semiconductor, is the most reliable and widely tested thermoelectric material, it is difficult to form a SiGe layer with high thermoelectric performance at temperatures lower than the heat-proof temperature of flexible plastic films. In this article, the synthesis of SiGe thermoelectric thin films via the metal-induced layer exchange phenomenon is reviewed, from its mechanism to device performance. The selection of metal species allows low-temperature formation (≤500 °C) of p- and n-type SiGe on insulating substrates. Currently, the maximum power factors near room temperature are 850 µW m<sup>−1</sup> K<sup>−2</sup> for p-type Si<sub>0.4</sub>Ge<sub>0.6</sub> and 1000 µW m<sup>−1</sup> K<sup>−2</sup> for n-type Si<sub>0.85</sub>Ge<sub>0.15</sub>. These values are the highest among those of Group IV semiconductor thin films formed at low temperatures. The flexible thermoelectric generator consisting of these p- and n-type SiGe exhibits cross-sectional and planar power densities of ≈3.0 mW cm<sup>−2</sup> and 0.50 µW cm<sup>−2</sup>, respectively, at a temperature difference of 30 K. Finally, the future challenges of layer exchange for improving the performance of flexible thermoelectric generators based on Group IV semiconductors are discussed.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140819583","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mingyu Xu, Shuyuan Huyan, Haozhe Wang, Sergey L. Bud'ko, Xinglong Chen, Xianglin Ke, John F. Mitchell, Paul C. Canfield, Jie Li, Weiwei Xie
Recently, superconductivity at high temperatures is observed in bulk La3Ni2O7−δ under high pressure. However, the attainment of high-purity La3Ni2O7−δ single crystals remains a formidable challenge. Here, the crystal structure and physical properties of single crystals of Sr-doped La3Ni2O7 synthesized at high pressure (20 GPa) and high temperature (1400 °C) are reported. Through single crystal X-ray diffraction, it is shown that high-pressure-synthesized paramagnetic Sr-doped La3Ni2O7 crystallizes in an orthorhombic structure with Ni─O─Ni bond angles of 173.4(2)° out-of-plane and 175.0(2)°and 176.7(2)°in plane. The substitution of Sr alters in band filling and the ratio of Ni2+/Ni3+ in Sr-doped La3Ni2O7, aligning them with those of “La3Ni2O7.05”, thereby leading to significant modifications in properties under high pressure relative to the unsubstituted parent phase. At ambient pressure, Sr-doped La3Ni2O7 exhibits insulating properties, and the conductivity increases as pressure goes up to 10 GPa. However, upon further increasing pressure beyond 10.7 GPa, Sr-doped La3Ni2O7 transits back from a metal-like behavior to an insulator. The insulator–metal–insulator trend under high pressure dramatically differs from the behavior of the parent compound La3Ni2O7−δ, despite their similar behavior in the low-pressure regime. These experimental results underscore the considerable challenge in achieving superconductivity in nickelates.
{"title":"Pressure-Dependent “Insulator–Metal–Insulator” Behavior in Sr-Doped La3Ni2O7","authors":"Mingyu Xu, Shuyuan Huyan, Haozhe Wang, Sergey L. Bud'ko, Xinglong Chen, Xianglin Ke, John F. Mitchell, Paul C. Canfield, Jie Li, Weiwei Xie","doi":"10.1002/aelm.202400078","DOIUrl":"https://doi.org/10.1002/aelm.202400078","url":null,"abstract":"Recently, superconductivity at high temperatures is observed in bulk La<sub>3</sub>Ni<sub>2</sub>O<sub>7−δ</sub> under high pressure. However, the attainment of high-purity La<sub>3</sub>Ni<sub>2</sub>O<sub>7−δ</sub> single crystals remains a formidable challenge. Here, the crystal structure and physical properties of single crystals of Sr-doped La<sub>3</sub>Ni<sub>2</sub>O<sub>7</sub> synthesized at high pressure (20 GPa) and high temperature (1400 °C) are reported. Through single crystal X-ray diffraction, it is shown that high-pressure-synthesized paramagnetic Sr-doped La<sub>3</sub>Ni<sub>2</sub>O<sub>7</sub> crystallizes in an orthorhombic structure with Ni─O─Ni bond angles of 173.4(2)° out-of-plane and 175.0(2)°and 176.7(2)°in plane. The substitution of Sr alters in band filling and the ratio of Ni<sup>2+</sup>/Ni<sup>3+</sup> in Sr-doped La<sub>3</sub>Ni<sub>2</sub>O<sub>7</sub>, aligning them with those of “La<sub>3</sub>Ni<sub>2</sub>O<sub>7.05”</sub>, thereby leading to significant modifications in properties under high pressure relative to the unsubstituted parent phase. At ambient pressure, Sr-doped La<sub>3</sub>Ni<sub>2</sub>O<sub>7</sub> exhibits insulating properties, and the conductivity increases as pressure goes up to 10 GPa. However, upon further increasing pressure beyond 10.7 GPa, Sr-doped La<sub>3</sub>Ni<sub>2</sub>O<sub>7</sub> transits back from a metal-like behavior to an insulator. The insulator–metal–insulator trend under high pressure dramatically differs from the behavior of the parent compound La<sub>3</sub>Ni<sub>2</sub>O<sub>7−δ</sub>, despite their similar behavior in the low-pressure regime. These experimental results underscore the considerable challenge in achieving superconductivity in nickelates.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"140819855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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