Advanced Electronic Materials最新文献

Lateral 2D tunnel diodes that reproduce metal-insulator-metal (MIM)-diode-like rectification without using dissimilar contacts are attractive for scalable nanoelectronics. MoS₂ can exist in both the semiconducting 1H phase and the metallic 1T phase, enabling phase-engineered homojunctions within a single material. First-principles electronic structure and quantum transport calculations show that phase-engineered 1T/1H/1T–MoS₂ homojunctions exhibit pronounced MIM-diode-like rectification originating from interfacial charge transfer at asymmetric 1T/1H interfaces. The charge transfer establishes interface dipole steps that impose a built-in potential drop across the 1H barrier, thereby generating a trapezoidal tunnel barrier at zero bias. In contrast, symmetric 1T/1H interfaces do not form an interface dipoles and show no rectification. To clarify the microscopic origin, a lateral graphene/hexagonal-boron-nitride/graphene junction is analyzed as a minimal MIM diode analogue with a simple interface and well-defined barrier, confirming that interface-induced dipoles, rather than work-function difference, enable the effect. The mechanism operates entirely within a single monolayer material system and does not rely on out-of-plane stacking, highlighting compatibility with phase patterning in 2D semiconductors. These results establish lateral 1T/1H/1TMoS₂ as a fully 2D, single-material platform for MIM-diode-like rectification and identify the interface-dipole engineering as a general strategy for designing ultrathin lateral tunnel diodes that can serve as building blocks for high-frequency detectors and energy-harvesting devices.

Organic electrochemical transistors (OECTs) have been of tremendous interest for neuromorphic memories thanks to their excellent device uniformity, facile processibility and biocompatibility. One of the hurdles for precise emulation of synaptic functions is poor long-term plasticity, mainly originated by facile diffusion of mobile ions between a channel and an electrolyte gate dielectric. Herein, we present that a gate dielectric of ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) [P(VDF-TrFE)], blended with an ionic liquid of 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl) imide ([EMIM][TFSI]), is beneficial for enhancing long-term plasticity for OECTs. Comparative studies for P(VDF-TrFE) and nonferroelectric fluorinated polymers indicate that polar ferroelectric β-phase crystals assist regulation of mobile ions in a nonvolatile manner, leading to a large memory window with an ON/OFF drain current ratio of ∼10³. The ferroelectric OECT exhibits long-term potentiation (LTP) and long-term depression (LTD) characteristics, and long-term retention time of >10³ s with distinguishable synaptic weight states. Our strategy provides a simple route for emulation of long-term synaptic behavior, potentially applicable for diverse sort of electrochemical synapses.

Intelligent metasurface (IM), a kind of ultrathin engineered structure composed of real-time controllable elements, has gained intensive attention in the areas of wireless communications and sensing over the past decade, owing to its unique capability of artificial intelligence (AI) empowered electromagnetic (EM) beam manipulation. Yet, it remains an open challenge in developing integrated sensing and communications (ISAC) scheme with the lower consumption of energy and frequency spectrum, the lower hardware cost, the better information security, etc. Here, we propose an IM-assisted concurrent ISAC (C-ISAC in short) scheme in the context of the direct antenna modulation (DAM) by sharing selectively a set of IM coding patterns for the concurrent 16-amplitude-phase-shift-keying (16-APSK) communications and sensing (human gesture recognition here). Moreover, the residual energies associated with low-power DAM symbols, that is traditionally wasted in conventional DAM communications, have been recycled for the purpose of wireless sensing in our approach, leading to the reuse of hardware and energy for ISAC. Thereby, this design is capable of not only addressing the issue of energy inefficiency involved in conventional DAM communications, but also enabling the simultaneous symbol-level signal transmission and sensing. We have implemented a prototype using a 1-bit phase-quantized IM, and experimentally demonstrated its superior ISAC's performance in terms of energy efficiency consistent with theoretical predictions. The presented method shows great potential for applications in smart homes, low-altitude economy, intelligent transportation, smart factories, and robotics.

Personalized health management aims to promote, maintain, and restore the health of individuals. Despite the ever-lasting research efforts involved in personalized healthcare bioelectronics, current healthcare platforms still face barriers such as costly facilities, specialized operations, and resource-limited applications. Therefore, personalized and user-friendly healthcare bioelectronics are urgently needed. Among emerging solutions, the integration of artificial intelligence (AI) and advanced bioelectronics is a pivotal approach that merges intelligent algorithms with multi-functional healthcare design. This review summarizes the latest advances in AI-assisted bioelectronics, aiming to provide a possible strategy for personalized healthcare applications. Initially, a brief survey is provided to discuss the material design, device fabrication, AI-hardware integration, and performance assessment of AI-assisted bioelectronics. The subsequent contents focus on the implementation of AI-assisted healthcare bioelectronics across health monitoring, early diagnosis, therapeutic treatment, and rehabilitation. Finally, we discuss the current challenges and prospective future developments in closed-loop healthcare bioelectronics, ultimately empowering individuals with control over their own health.