While compositional gradient-induced spin-current generation is explored, its microscopic mechanisms remain poorly understood. Here, the contribution of polarity of compositional gradient on spin-current generation is explored. A nanoscale compositional gradient, formed by in situ atomic diffusion of ultrathin Ti and W layers, is introduced between 10-nm-thick W and Ti layers. Spin-torque ferromagnetic resonance in ferromagnetic Ni95Cu5 deposited on this gradient reveals that a moderate compositional gradient suppresses negative spin torque from the spin Hall effect in W. In contrast, reversing the Ti/W stacking order, which inverts the gradient, suppresses positive spin torque from the orbital Hall effect in Ti. These findings suggest that the sign of spin torque is governed by the polarity of compositional gradient, providing a novel strategy for efficient spin-torque generation without relying on materials with strong spin or orbital Hall effect.
虽然对成分梯度诱导的自旋电流产生进行了探索，但对其微观机制仍然知之甚少。本文探讨了成分梯度的极性对自旋电流产生的影响。在 10 纳米厚的 W 层和 Ti 层之间引入了由超薄 Ti 层和 W 层的原位原子扩散形成的纳米级成分梯度。沉积在这一梯度上的铁磁性 Ni95Cu5 中的自旋力矩铁磁共振显示，适度的成分梯度抑制了 W 中自旋霍尔效应产生的负自旋力矩。这些研究结果表明，自旋力矩的符号受成分梯度极性的制约，为高效产生自旋力矩提供了一种新策略，而无需依赖具有强自旋或轨道霍尔效应的材料。
{"title":"Reversal of Spin-Torque Polarity with Inverting Current Vorticity in Composition-Graded Layer at the Ti/W Interface","authors":"Hayato Nakayama, Taisuke Horaguchi, Jun Uzuhashi, Cong He, Hiroaki Sukegawa, Tadakatsu Ohkubo, Seiji Mitani, Kazuto Yamanoi, Yukio Nozaki","doi":"10.1002/aelm.202400797","DOIUrl":"https://doi.org/10.1002/aelm.202400797","url":null,"abstract":"While compositional gradient-induced spin-current generation is explored, its microscopic mechanisms remain poorly understood. Here, the contribution of polarity of compositional gradient on spin-current generation is explored. A nanoscale compositional gradient, formed by in situ atomic diffusion of ultrathin Ti and W layers, is introduced between 10-nm-thick W and Ti layers. Spin-torque ferromagnetic resonance in ferromagnetic Ni<sub>95</sub>Cu<sub>5</sub> deposited on this gradient reveals that a moderate compositional gradient suppresses negative spin torque from the spin Hall effect in W. In contrast, reversing the Ti/W stacking order, which inverts the gradient, suppresses positive spin torque from the orbital Hall effect in Ti. These findings suggest that the sign of spin torque is governed by the polarity of compositional gradient, providing a novel strategy for efficient spin-torque generation without relying on materials with strong spin or orbital Hall effect.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"38 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143798005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yeong Jun Yun, Hyun Jin Kang, Chan Yun Bae, Gyu Heon Bae, Hyun Jin Lee, Ki Hoon Kim, Yeong Jun Jang, Tae Won Nam, Jung Woo Lee
Accurate and continuous temperature monitoring is essential for effective diagnosis and management of health conditions, particularly amid global challenges such as the COVID-19 pandemic and the rising prevalence of age-related diseases and cancer. However, conventional temperature-measuring devices suffer from inherent limitations, including rigidity, bulkiness, and insufficient sensitivity, making them unsuitable for long-term, real-time applications. To overcome these challenges, a highly sensitive and flexible temperature sensor utilizing partially reduced graphene oxide (PrGO) as the sensing material is developed. Graphene oxide (GO), characterized by disrupted sp2 bonds and oxygen-rich functional groups that act as electron traps, undergoes controlled reduction to modulate its electrical and structural properties. In this study, by employing the flash-thermal reduction technique, the reduction degree of the GO with systematic analyses on conductivity and material stability is precisely adjusted. The optimized flash-thermal reduced graphene oxide based sensor exhibits exceptional flexibility, reversibility, high sensitivity (≈1.28% °C−1), excellent linearity (R2 ≈ 0.999), long-term stability, and a rapid response time (≈0.6 s), outperforming conventional metal-based temperature sensors in sensitivity. These advancements highlight the transformative potential of flash-thermal reduction for next-generation wearable sensors, offering a lightweight, adaptable, and highly responsive platform for real-time medical monitoring and healthcare applications.
{"title":"Flash-Thermal Reduction of Graphene Oxide with Flexible Electronics Platform for Highly Sensitive Wearable Temperature Sensor","authors":"Yeong Jun Yun, Hyun Jin Kang, Chan Yun Bae, Gyu Heon Bae, Hyun Jin Lee, Ki Hoon Kim, Yeong Jun Jang, Tae Won Nam, Jung Woo Lee","doi":"10.1002/aelm.202400984","DOIUrl":"https://doi.org/10.1002/aelm.202400984","url":null,"abstract":"Accurate and continuous temperature monitoring is essential for effective diagnosis and management of health conditions, particularly amid global challenges such as the COVID-19 pandemic and the rising prevalence of age-related diseases and cancer. However, conventional temperature-measuring devices suffer from inherent limitations, including rigidity, bulkiness, and insufficient sensitivity, making them unsuitable for long-term, real-time applications. To overcome these challenges, a highly sensitive and flexible temperature sensor utilizing partially reduced graphene oxide (PrGO) as the sensing material is developed. Graphene oxide (GO), characterized by disrupted sp<sup>2</sup> bonds and oxygen-rich functional groups that act as electron traps, undergoes controlled reduction to modulate its electrical and structural properties. In this study, by employing the flash-thermal reduction technique, the reduction degree of the GO with systematic analyses on conductivity and material stability is precisely adjusted. The optimized flash-thermal reduced graphene oxide based sensor exhibits exceptional flexibility, reversibility, high sensitivity (≈1.28% °C<sup>−1</sup>), excellent linearity (R<sup>2</sup> ≈ 0.999), long-term stability, and a rapid response time (≈0.6 s), outperforming conventional metal-based temperature sensors in sensitivity. These advancements highlight the transformative potential of flash-thermal reduction for next-generation wearable sensors, offering a lightweight, adaptable, and highly responsive platform for real-time medical monitoring and healthcare applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"59 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143806296","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Artem Fediai, Franz Symalla, Tobias Neumann, Wolfgang Wenzel
In organic electronics, conductivity doping is used primarily to eliminate charge injection barriers in organic light-emitting diodes, organic photovoltaics and other electronic devices. Therefore, research on conductivity doping is primarily focused on understanding and enhancing the properties of these doped layers. In contrast, this work shifts the focus from optimizing doped layers to leveraging the doping process as a tool for investigating fundamental material properties. Specifically, the dopant is used as an “agent” to enable the measurement of three critical parameters- ionization potential (IP), electron affinity (EA), and Coulomb interaction energy (VC) – that govern dopant ionization and play central roles in organic electronic devices in general. While these parameters can be measured experimentally, conventional approaches often involve intricate or indirect methods, such as spectral deconvolution, which may introduce ambiguities or fail to represent bulk properties. Here it is shown how consolidating the experimental data and simulations on the dopant ionization fraction and doped-induced conductivity can be used to estimate the mean IP or EA of the embedded organic molecule, and VC of the embedded charge-transfer complex. These results illustrate how measuring and simulating doped materials can provide access to the fundamental design parameters of organic electronic devices.
在有机电子学中，导电性掺杂主要用于消除有机发光二极管、有机光伏和其他电子器件中的电荷注入障碍。因此，有关导电性掺杂的研究主要侧重于了解和增强这些掺杂层的特性。相比之下，本研究将重点从优化掺杂层转移到利用掺杂过程作为研究基本材料特性的工具。具体来说，掺杂剂被用作一种 "药剂"，用于测量三个关键参数--电离势（IP）、电子亲和力（EA）和库仑相互作用能（VC）--这些参数控制着掺杂剂的电离，并在有机电子器件中发挥着核心作用。虽然这些参数可以通过实验测量，但传统方法往往涉及复杂或间接的方法，如光谱解卷积，这可能会带来歧义或无法代表体质特性。本文展示了如何综合实验数据和掺杂剂电离分数及掺杂诱导电导率的模拟结果，来估算嵌入有机分子的平均 IP 或 EA 值，以及嵌入电荷转移复合物的 VC 值。这些结果说明了测量和模拟掺杂材料如何能够获得有机电子器件的基本设计参数。
{"title":"Using Dopants as Agents to Probe Key Electronic Properties of Organic Semiconductors","authors":"Artem Fediai, Franz Symalla, Tobias Neumann, Wolfgang Wenzel","doi":"10.1002/aelm.202400988","DOIUrl":"https://doi.org/10.1002/aelm.202400988","url":null,"abstract":"In organic electronics, conductivity doping is used primarily to eliminate charge injection barriers in organic light-emitting diodes, organic photovoltaics and other electronic devices. Therefore, research on conductivity doping is primarily focused on understanding and enhancing the properties of these doped layers. In contrast, this work shifts the focus from optimizing doped layers to leveraging the doping process as a tool for investigating fundamental material properties. Specifically, the dopant is used as an “agent” to enable the measurement of three critical parameters- ionization potential (IP), electron affinity (EA), and Coulomb interaction energy (<i>V</i><sub>C</sub>) – that govern dopant ionization and play central roles in organic electronic devices in general. While these parameters can be measured experimentally, conventional approaches often involve intricate or indirect methods, such as spectral deconvolution, which may introduce ambiguities or fail to represent bulk properties. Here it is shown how consolidating the experimental data and simulations on the dopant ionization fraction and doped-induced conductivity can be used to estimate the mean IP or EA of the embedded organic molecule, and <i>V</i><sub>C</sub> of the embedded charge-transfer complex. These results illustrate how measuring and simulating doped materials can provide access to the fundamental design parameters of organic electronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143789584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The demand for next-generation wide bandgap semiconductors is driven by applications such as solar-blind ultraviolet detection and ultra-high power electronics, and gallium oxide (Ga2O3) has emerged as a highly promising candidate material due to its ultra-wide bandgap, high intrinsic breakdown field strength, and quite significant ultraviolet absorption. However, the lack of doping engineering based on substituting isovalent elements to achieve bandgap tuning has limited the development of Ga2O3 in ultraviolet detection. Here, the trivalent lanthanide elements are used as the homovalent substitution of gallium in Ga2O3 to achieve effective regulation of the optical bandgap. The theoretical calculation shows that the doped lanthanide (Lu) introduces its 6s orbital electrons to the conduction band of Ga2O3, resulting in a significant shift of the conduction band. Furthermore, an ITO/Ga2O3:Ln/Au structure photodetector is prepared by Ga2O3:Lu thin films, which exhibits an ultra-low dark current (−2.09 × 10−¹3 A) and a fast response speed (321/136.8 ms), demonstrating the great prospect of Ga2O3:Ln semiconductors in photoelectronics.
{"title":"Lanthanide-Doped Ga2O3: A Route to Bandgap Engineering for Ultraviolet Detection","authors":"Shunze Huang, Xuefang Lu, Yinlong Cheng, Jianzhong Xu, Xin Qian, Feng Huang, Richeng Lin","doi":"10.1002/aelm.202500030","DOIUrl":"https://doi.org/10.1002/aelm.202500030","url":null,"abstract":"The demand for next-generation wide bandgap semiconductors is driven by applications such as solar-blind ultraviolet detection and ultra-high power electronics, and gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) has emerged as a highly promising candidate material due to its ultra-wide bandgap, high intrinsic breakdown field strength, and quite significant ultraviolet absorption. However, the lack of doping engineering based on substituting isovalent elements to achieve bandgap tuning has limited the development of Ga<sub>2</sub>O<sub>3</sub> in ultraviolet detection. Here, the trivalent lanthanide elements are used as the homovalent substitution of gallium in Ga<sub>2</sub>O<sub>3</sub> to achieve effective regulation of the optical bandgap. The theoretical calculation shows that the doped lanthanide (Lu) introduces its 6s orbital electrons to the conduction band of Ga<sub>2</sub>O<sub>3</sub>, resulting in a significant shift of the conduction band. Furthermore, an ITO/Ga<sub>2</sub>O<sub>3</sub>:Ln/Au structure photodetector is prepared by Ga<sub>2</sub>O<sub>3</sub>:Lu thin films, which exhibits an ultra-low dark current (−2.09 × 10<sup>−</sup>¹<sup>3</sup> A) and a fast response speed (321/136.8 ms), demonstrating the great prospect of Ga<sub>2</sub>O<sub>3</sub>:Ln semiconductors in photoelectronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"73 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143782868","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shuo Wang, Zebin Kong, Jie Zhao, Shukai Guan, Ranran Zhao, Anan Ju, Kunshu Wang, Pengfei Lian
This study identifies a novel failure mode in silicon dioxide/silicon nitride (SiO₂/Si₃N₄) capacitors caused by dopant diffusion in heavily doped polysilicon substrates. Under identical thermal oxidation conditions, the interfacial oxide layer is significantly thinner on p type polysilicon compared to n type polysilicon. N type capacitors exhibit superior performance, with a breakdown voltage of 88 V, whereas p type capacitors demonstrate lower breakdown voltage of 51 V. The time-dependent dielectric breakdown (TDDB) analysis indicates that n type capacitors exhibit lifetimes exceeding 10 years under high-voltage stress at 125 °C. In contrast, p type capacitors demonstrate rapid failure when subjected to a voltage of 30 V. Conduction analysis reveals that Poole–Frenkel conduction dominates the stacked dielectric layers, but thinning of the interfacial oxide layer significantly increases Fowler–Nordheim tunneling, ultimately driving stacked dielectric breakdown. These findings highlight the critical role of dopant diffusion in interfacial oxide reliability and provide insights for improving the performance of high-k stacked dielectrics in heavily doped polysilicon.
{"title":"Dopant Diffusion-Induced Dielectric Breakdown: Stacked Dielectric Reliability on Heavily Doped Polysilicon","authors":"Shuo Wang, Zebin Kong, Jie Zhao, Shukai Guan, Ranran Zhao, Anan Ju, Kunshu Wang, Pengfei Lian","doi":"10.1002/aelm.202500046","DOIUrl":"https://doi.org/10.1002/aelm.202500046","url":null,"abstract":"This study identifies a novel failure mode in silicon dioxide/silicon nitride (SiO₂/Si₃N₄) capacitors caused by dopant diffusion in heavily doped polysilicon substrates. Under identical thermal oxidation conditions, the interfacial oxide layer is significantly thinner on p type polysilicon compared to n type polysilicon. N type capacitors exhibit superior performance, with a breakdown voltage of 88 V, whereas p type capacitors demonstrate lower breakdown voltage of 51 V. The time-dependent dielectric breakdown (TDDB) analysis indicates that n type capacitors exhibit lifetimes exceeding 10 years under high-voltage stress at 125 °C. In contrast, p type capacitors demonstrate rapid failure when subjected to a voltage of 30 V. Conduction analysis reveals that Poole–Frenkel conduction dominates the stacked dielectric layers, but thinning of the interfacial oxide layer significantly increases Fowler–Nordheim tunneling, ultimately driving stacked dielectric breakdown. These findings highlight the critical role of dopant diffusion in interfacial oxide reliability and provide insights for improving the performance of high-k stacked dielectrics in heavily doped polysilicon.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"59 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143782867","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In article number 2400676, Yang Bai and co-workers demonstrate a highly stretchable LED display using liquid metal and molybdenum-barriered multilayer electrodes. This technology enables high reliability as well as high stretchability under repeated deformation of 12,000 times and long-term stability over 300 days.
{"title":"Highly Stretchable LED Display Using Liquid Metal and Molybdenum-Barriered Multilayer Electrodes with Long-Term Reliability (Adv. Electron. Mater. 4/2025)","authors":"Masashi Miyakawa, Hiroshi Tsuji, Tatsuya Takei, Toshihiro Yamamoto, Yoshihide Fujisaki, Mitsuru Nakata","doi":"10.1002/aelm.202570012","DOIUrl":"10.1002/aelm.202570012","url":null,"abstract":"<p><b>Highly Stretchable LED Displays</b></p><p>In article number 2400676, Yang Bai and co-workers demonstrate a highly stretchable LED display using liquid metal and molybdenum-barriered multilayer electrodes. This technology enables high reliability as well as high stretchability under repeated deformation of 12,000 times and long-term stability over 300 days.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 4","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202570012","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143767036","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jian Wang, Zhuowen Zou, Jiajun Zhu, Dandan Gao, Wanbiao Hu
The wealth of complex defects induces attractive functionalities and structural variations in materials. This renders engineering defect states, as well as building up a defect-property relationship, a central subject, but it remains highly challenging because the configurations and charge dynamics of the involved defect systems are hardly explored and thus unclear experimentally. Herein, the defect-dipole-cluster in La-doped CaTiO3 and, more importantly, its dielectric response process is clarified. Through combined HAADF-STEM, DFT calculation, dielectric, and photoluminescence (PL) spectroscopy, the defect configuration is identified to be VCa − O− − LaCa type defect-cluster-dipole. The electron–hole recombination from the Ti3+ and O− states dominates the dielectric relaxation process, as revealed by the similar relaxation frequencies of dielectric response and photoluminescence emission. These findings experimentally demonstrate property tailoring involved in defect-cluster-dipole, providing crucial insights for establishing the defect-property relationship in dielectric materials.
{"title":"Configuration and Charge Dynamics of Defect-Cluster-Dipoles in CaTiO3 for Enhanced Permittivity","authors":"Jian Wang, Zhuowen Zou, Jiajun Zhu, Dandan Gao, Wanbiao Hu","doi":"10.1002/aelm.202500145","DOIUrl":"https://doi.org/10.1002/aelm.202500145","url":null,"abstract":"The wealth of complex defects induces attractive functionalities and structural variations in materials. This renders engineering defect states, as well as building up a defect-property relationship, a central subject, but it remains highly challenging because the configurations and charge dynamics of the involved defect systems are hardly explored and thus unclear experimentally. Herein, the defect-dipole-cluster in La-doped CaTiO<sub>3</sub> and, more importantly, its dielectric response process is clarified. Through combined HAADF-STEM, DFT calculation, dielectric, and photoluminescence (PL) spectroscopy, the defect configuration is identified to be <i>V</i><sub><b>Ca</b></sub> − <b>O</b><sup>−</sup> − <b>La</b><sub><b>Ca</b></sub> type defect-cluster-dipole. The electron–hole recombination from the Ti<sup>3+</sup> and O<sup>−</sup> states dominates the dielectric relaxation process, as revealed by the similar relaxation frequencies of dielectric response and photoluminescence emission. These findings experimentally demonstrate property tailoring involved in defect-cluster-dipole, providing crucial insights for establishing the defect-property relationship in dielectric materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"21 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143767037","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jae Seung Woo, Chae Lin Jung, Jin Ho Chang, Minjeong Ryu, Woo Young Choi
Dual-Layer-Per-Array Operations
In article number 2400606, Woo Young Choi and co-workers propose and implement a novel dual-layer-per-array operation in a FeTFET array for large-scale neural network implementations. Owing to independently controllable two current regions, dual-layer vector-matrix multiplication operations can be performed within a single FeTFET synapse array, enabling identical neural network implementation in half the area of the conventional neuromorphic hardware.
{"title":"Dual-Layer-Per-Array Operation Using Local Polarization Switching of Ferroelectric Tunnel FETs for Massive Neural Networks (Adv. Electron. Mater. 4/2025)","authors":"Jae Seung Woo, Chae Lin Jung, Jin Ho Chang, Minjeong Ryu, Woo Young Choi","doi":"10.1002/aelm.202570011","DOIUrl":"https://doi.org/10.1002/aelm.202570011","url":null,"abstract":"<p><b>Dual-Layer-Per-Array Operations</b></p><p>In article number 2400606, Woo Young Choi and co-workers propose and implement a novel dual-layer-per-array operation in a FeTFET array for large-scale neural network implementations. Owing to independently controllable two current regions, dual-layer vector-matrix multiplication operations can be performed within a single FeTFET synapse array, enabling identical neural network implementation in half the area of the conventional neuromorphic hardware.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 4","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202570011","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143769951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kiyung Kim, Minjae Kim, Yongsu Lee, Hae-Won Lee, Jae Hyeon Jun, Jun-Hyeok Choi, Seongbeen Yoon, Hyeon-Jun Hwang, Byoung Hun Lee
The complementary field-effect transistor (CFET) structure is a highly area-efficient technology. However, their fabrication entails highly complex integration processes using wafer transfer or recrystallization, which has been limiting further development. In this paper, an alternative method is proposed to realize CFETs using p-type tellurium (Te) (for the lower-level channel) and n-type zinc oxide (ZnO) (for the upper-level channel). Te and ZnO are directly deposited on a 30 × 30 mm2 SiO2/Silicon substrate, using a considerably low-temperature fabrication process (<150 °C). The lower p-type channel exhibits superior mobility exceeding 10 cm2 V−1 s−1 even after the integration of the entire CFET process. The CFET inverter demonstrates a voltage gain >51 at VDD = 4 V and noise margins of 0.36 and 0.45 V at VDD = 1 V. Using the same integration process, functional NAND and NOR logic gates are successfully demonstrated in the vertically integrated CFET structure. The proposed ZnO/Te CFET can be a promising device technology, particularly for 3D and heterojunction integration requiring a low thermal budget.
{"title":"Demonstration of Vertically Stacked ZnO/Te Complementary Field-Effect Transistor","authors":"Kiyung Kim, Minjae Kim, Yongsu Lee, Hae-Won Lee, Jae Hyeon Jun, Jun-Hyeok Choi, Seongbeen Yoon, Hyeon-Jun Hwang, Byoung Hun Lee","doi":"10.1002/aelm.202500031","DOIUrl":"https://doi.org/10.1002/aelm.202500031","url":null,"abstract":"The complementary field-effect transistor (CFET) structure is a highly area-efficient technology. However, their fabrication entails highly complex integration processes using wafer transfer or recrystallization, which has been limiting further development. In this paper, an alternative method is proposed to realize CFETs using p-type tellurium (Te) (for the lower-level channel) and n-type zinc oxide (ZnO) (for the upper-level channel). Te and ZnO are directly deposited on a 30 × 30 mm<sup>2</sup> SiO<sub>2</sub>/Silicon substrate, using a considerably low-temperature fabrication process (<150 °C). The lower p-type channel exhibits superior mobility exceeding 10 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> even after the integration of the entire CFET process. The CFET inverter demonstrates a voltage gain >51 at <i>V</i><sub>DD</sub> = 4 V and noise margins of 0.36 and 0.45 V at <i>V</i><sub>DD</sub> = 1 V. Using the same integration process, functional NAND and NOR logic gates are successfully demonstrated in the vertically integrated CFET structure. The proposed ZnO/Te CFET can be a promising device technology, particularly for 3D and heterojunction integration requiring a low thermal budget.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143767139","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jonathan Perez Andrade, Angelika Wrzesińska-Lashkova, Anupam Prasoon, Felix Talnack, Katherina Haase, Bernd Büchner, Xinliang Feng, Yana Vaynzof, Mike Hambsch, Yulia Krupskaya, Stefan C. B. Mannsfeld
A straightforward method is developed to produce ion-gels (IGs) with surface roughness at the nanometer level using a solution-shearing process, enabling the first successful growth of crystalline, small-molecule organic semiconductor (OSC) films directly on the IG layer. The effectiveness of this approach is demonstrated by fabricating top-contact electrolyte-gated organic field-effect transistors (EGOFETs) using thermal vapor deposition and solution-shearing. The gel matrix consists of polymethyl methacrylate (PMMA) or its blend with poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF:HFP), and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMI][TFSI]) serves as ionic liquid. X-ray photoemission spectroscopy (XPS) reveals that the shearing speed controls the polymer phase separation in the blended gels, producing capacitance values of up to 10.1 µF cm−2. The exceptional smoothness of the gel films permits vacuum deposition polycrystalline films of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophen (C8-BTBT), dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophen (DNTT), and 2,9-didecyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT), and solution-shearing of C8-BTBT and 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) on their surfaces. Grazing incidence wide-angle X-ray scattering (GIWAXS) can now be conducted directly on the OSC films without obstruction by the gel. EGOFETs with minimal hysteresis and mobilities up to 1.46 cm2 V−1 s−1 are obtained for C10-DNTT. This study underscores the possibility of producing transistor-grade polycrystalline organic semiconductor films on top of IGs, making them attractive for surface characterization techniques and in situ measurements.
{"title":"Solution-Shearing of Highly Smooth Ion-Gel Thin Films: Facilitating the Deposition of Organic Semiconductors for Ion-Gated Organic Field Effect Transistors","authors":"Jonathan Perez Andrade, Angelika Wrzesińska-Lashkova, Anupam Prasoon, Felix Talnack, Katherina Haase, Bernd Büchner, Xinliang Feng, Yana Vaynzof, Mike Hambsch, Yulia Krupskaya, Stefan C. B. Mannsfeld","doi":"10.1002/aelm.202400312","DOIUrl":"https://doi.org/10.1002/aelm.202400312","url":null,"abstract":"A straightforward method is developed to produce ion-gels (IGs) with surface roughness at the nanometer level using a solution-shearing process, enabling the first successful growth of crystalline, small-molecule organic semiconductor (OSC) films directly on the IG layer. The effectiveness of this approach is demonstrated by fabricating top-contact electrolyte-gated organic field-effect transistors (EGOFETs) using thermal vapor deposition and solution-shearing. The gel matrix consists of polymethyl methacrylate (PMMA) or its blend with poly(vinylidene fluoride-co-hexafluoropropylene) (PVDF:HFP), and 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMI][TFSI]) serves as ionic liquid. X-ray photoemission spectroscopy (XPS) reveals that the shearing speed controls the polymer phase separation in the blended gels, producing capacitance values of up to 10.1 µF cm<sup>−</sup><sup>2</sup>. The exceptional smoothness of the gel films permits vacuum deposition polycrystalline films of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophen (C8-BTBT), dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophen (DNTT), and 2,9-didecyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT), and solution-shearing of C8-BTBT and 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) on their surfaces. Grazing incidence wide-angle X-ray scattering (GIWAXS) can now be conducted directly on the OSC films without obstruction by the gel. EGOFETs with minimal hysteresis and mobilities up to 1.46 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> are obtained for C10-DNTT. This study underscores the possibility of producing transistor-grade polycrystalline organic semiconductor films on top of IGs, making them attractive for surface characterization techniques and in situ measurements.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"108 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-04-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143776052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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