Advanced Electronic Materials最新文献_第4页

The Evolution of Gas Sensors Into Neuromorphic Systems 气体传感器向神经形态系统的进化

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2025-12-18 DOI: 10.1002/aelm.202500639

Kevin Dominguez, Dhananjay D. Kumbhar, Abdul Momin Syed, Regina C. Martin, Nazek El‐Atab

Gas sensors are essential in applications ranging from environmental monitoring and industrial safety to healthcare diagnostics and consumer devices, where reliable and selective detection is critical. With growing demands for sensitivity, selectivity, and energy efficiency, sensor technology has evolved significantly. Historically, the field advanced from sentinel organisms and gas lamps to a range of sophisticated mechanisms. Yet, conventional sensors remain limited to passive detection, relying on separate units for memory and processing, which leads to higher power consumption, slower response, and reduced adaptability in dynamic environments. Neuromorphic sensing provides a compelling alternative by integrating sensing, memory, and computation in a single device, enabling compact, energy‐efficient, and adaptive gas detection inspired by biological olfactory systems. This review begins with a concise overview of traditional semiconductor metal oxide gas sensors, providing a baseline for introducing memristor‐based gas sensors, or “gasistors.” These devices represent a transformative shift, offering improved efficiency, reliability, and versatility in gas sensing electronics. We then highlight the neuromorphic in‐memory gas sensing paradigm, with examples including electronic noses, bio‐inspired olfactory systems, and spike‐based computational frameworks. Finally, we discuss progress in materials, device architectures, and algorithms, and outline opportunities and challenges for realizing the full potential of neuromorphic gas sensing.

气体传感器在从环境监测和工业安全到医疗诊断和消费设备的各种应用中都是必不可少的，在这些应用中，可靠和有选择性的检测至关重要。随着对灵敏度、选择性和能源效率的需求不断增长，传感器技术已经有了显著的发展。从历史上看，该领域从哨兵生物和煤气灯发展到一系列复杂的机制。然而，传统传感器仍然局限于被动检测，依赖于单独的存储和处理单元，这导致更高的功耗，更慢的响应，以及在动态环境中的适应性降低。神经形态传感通过在单个设备中集成传感、记忆和计算，提供了一种引人注目的替代方案，实现了受生物嗅觉系统启发的紧凑、节能和自适应气体检测。本文首先简要概述了传统半导体金属氧化物气体传感器，为介绍基于忆阻器的气体传感器或“气敏器”提供了基础。这些设备代表了一种革命性的转变，为气体传感电子产品提供了更高的效率、可靠性和多功能性。然后，我们重点介绍了记忆中神经形态的气体传感范例，包括电子鼻、生物激发嗅觉系统和基于峰值的计算框架。最后，我们讨论了材料、器件架构和算法方面的进展，并概述了实现神经形态气体传感全部潜力的机遇和挑战。

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引用次数: 0

Unlocking Ferroelectricity in Scalable AlBN Films via Plasma‐Enhanced Atomic Layer Deposition 通过等离子体增强原子层沉积解锁可扩展AlBN薄膜中的铁电性

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2025-12-17 DOI: 10.1002/aelm.202500643

Jayeong Lee, Jiwon Jeon, Donghwan Jung, Youngjin Lee, Beomkyu Shin, Jae‐Hyeon An, Jong‐Ryul Jeong, Young‐Jun Yu, Hyeyoung Shin, Nari Jeon

Ferroelectric metal nitride thin films, particularly AlScN, have recently emerged as transformative materials for next‐generation electronics, owing to their high polarization, tunable coercive fields, exceptional endurance, and thermal stability. In pursuit of device miniaturization, atomic layer deposition (ALD) offers unparalleled advantages by delivering angstrom‐level thickness precision and conformality on complex 3D architectures; yet most prior studies have relied on physical vapor deposition of films several hundred nanometers thick. Here, we demonstrate the plasma‐enhanced ALD of B‐doped AlN (AlBN) thin films, where systematic control of the AlN:BN cycle ratio precisely regulates B concentration, enabling direct elucidation of the interplay between composition, crystallinity, and ferroelectric behavior. Density functional theory provided mechanistic insight into B incorporation pathways, while piezoresponse force microscopy confirmed local polarization switching across all compositions, with the optimized AlBN film exhibiting the most pronounced P–E hysteresis loop. This composition further displayed low leakage current and endurance exceeding 10 5 switching cycles. Collectively, these findings establish PEALD‐grown AlBN as a robust ferroelectric nitride and highlight its promise as a CMOS‐compatible, scalable alternative to AlScN for next‐generation non‐volatile memory technologies.

铁电金属氮化薄膜，特别是AlScN薄膜，由于其高极化、可调矫顽场、优异的耐久性和热稳定性，最近成为下一代电子产品的变革性材料。在追求器件小型化的过程中，原子层沉积（ALD）通过在复杂的3D结构上提供埃级厚度精度和一致性提供了无与伦比的优势；然而，大多数先前的研究都依赖于几百纳米厚的薄膜的物理气相沉积。在这里，我们展示了等离子体增强的B掺杂AlN （AlBN）薄膜的ALD，其中系统控制AlN:BN循环比精确调节B浓度，从而直接阐明了成分，结晶度和铁电行为之间的相互作用。密度泛函理论提供了B结合途径的机理，而压电响应力显微镜证实了所有成分的局部极化开关，优化的AlBN薄膜表现出最明显的P-E滞后环。该组合物进一步显示出低泄漏电流和超过10.5个开关循环的耐久性。总的来说，这些发现证明了ald生长的AlBN是一种强大的铁电氮化物，并突出了其作为CMOS兼容、可扩展的AlScN替代品的前景，可用于下一代非易失性存储技术。

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引用次数: 0

Thickness‐Driven Modulation of Electronic Transport in SnSe 2 ‐grown Films by Low‐Temperature Atomic Layer Deposition 低温原子层沉积对snse2生长薄膜中电子输运的厚度驱动调制

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2025-12-17 DOI: 10.1002/aelm.202500560

Alejandra Ruiz‐Clavijo, Amin Bahrami, Jaroslav Charvot, Sebastian Lehmann, Jaakko Julin, Daniel Wolf, Lars Giebeler, Angelika Wrzesińska‐Lashkova, Fabian Pieck, Javier Outon, Ralf Tonner‐Zech, Filip Bureš, Yana Vaynzof, Eduardo Blanco, Kornelius Nielsch

Low‐temperature atomic layer deposition (ALD) is increasingly important for the integration of layered metal dichalcogenides such as tin diselenide (SnSe 2 ) into advanced nanoelectronic devices, where compatibility with temperature‐sensitive substrates and precise thickness control are essential. Using a novel and highly reactive selenium precursor, namely, bis(trimethylstannyl)selenide or Se(SnMe 3 ) 2 , SnSe 2 films are deposited at reduced temperatures. As‐deposited films are initially amorphous, however, post‐deposition annealing at 250°C induces crystallization. Structural analysis reveals a clear evolution in crystallinity: ultrathin films (∼25 nm) exhibit nearly single‐crystalline, defect‐free domains, while thicker films (∼100 nm) transition to a polycrystalline structure. This controlled variation in crystal quality directly influences the electronic transport properties, demonstrating the potential of low‐temperature ALD combined with mild annealing for scalable fabrication of high‐performance, thickness‐engineered SnSe 2 ‐based devices.

低温原子层沉积（ALD）对于将层状金属二硫化物（如二硒化锡（SnSe 2））集成到先进的纳米电子器件中越来越重要，其中与温度敏感衬底的兼容性和精确的厚度控制是必不可少的。采用一种新型的高活性硒前驱体，即双（三甲基锡基）硒化物或Se(snme3) 2，在还原温度下沉积了snse2薄膜。沉积薄膜最初是无定形的，然而，在250°C的沉积后退火诱导结晶。结构分析揭示了结晶度的清晰演变：超薄膜（~ 25 nm）表现出几乎单晶、无缺陷的结构域，而较厚的薄膜（~ 100 nm）则转变为多晶结构。这种控制晶体质量的变化直接影响电子输运性质，证明了低温ALD结合温和退火在高性能、厚度工程的SnSe 2基器件的可扩展制造中的潜力。

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引用次数: 0

Tunable Electronic and Optoelectronic Properties of MoS 2 Through Molecular Coverage‐Controlled Polyoxometalate Doping 通过分子覆盖控制的多金属氧酸盐掺杂制备MoS 2的可调谐电子和光电子特性

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2025-12-17 DOI: 10.1002/aelm.202500706

Jean‐Pierre Glauber, Marco Moors, Dmitry A. Ryndyk, Emad Najafidehaghani, Jonas Lorenz, Rahel‐Manuela Maas, Nils Boysen, Harish Parala, Thomas Heine, Anjana Devi, Kirill Monakhov

We investigated the functionalization of pristine and post‐deposition‐annealed atomic layer deposition (ALD)‐grown MoS 2 films on silicon wafers with the polyoxometalate (POM) ( n Bu 4 N) 3 [HV 12 O 32 Cl(DyPc)] (referred to as V 12 ‐ DyPc ) and its impact on the optical and electronic properties of 2D semiconductor layers. Thin‐film analysis confirms the formation of high‐quality, polycrystalline MoS 2 after annealing. The deposition of V 12 ‐ DyPc induces a concentration‐dependent reduction in A exciton emission and the emergence of negatively charged trion (A – ) photoluminescence (PL), evidencing systematic charge transfer. Studies on thinner MoS 2 layers grown by metal‐organic chemical vapor deposition (MOCVD) corroborate this effect. Short‐range surface ordering of POMs is detected on pristine, amorphous MoS 2 . Notably, V 12 ‐ DyPc exhibits identical multilevel switching behavior on both amorphous and polycrystalline, annealed MoS 2 . On MoS 2 , V 12 ‐ DyPc shows a significantly reduced lateral electronic density distribution (3 nm compared to 7 nm on highly oriented pyrolytic graphite (HOPG)) and a more positive first reduction potential (3.1 V vs. 2.1 V, respectively). These changes are due to the substantially increased surface roughness of MoS 2 relative to the atomically flat HOPG substrate, and to the impact of a modified chemical environment on MoS 2 . Density functional theory (DFT) and molecular mechanics simulations reveal face‐on bonding geometries, altered redox energetics, and substrate‐dependent shifts in electronic states.

我们研究了用多金属氧酸盐（POM）（n Bu 4 n） 3 [HV 12 O 32 Cl(DyPc)]（简称V 12 - DyPc）在硅片上原始和沉积后退火原子层沉积（ALD）生长的MoS 2薄膜的功能化及其对二维半导体层光学和电子性能的影响。薄膜分析证实退火后形成了高质量的多晶MoS 2。v12 - DyPc的沉积诱导了a激子发射的浓度依赖性降低和带负电荷的trion （a -）光致发光（PL）的出现，证明了系统的电荷转移。通过金属有机化学气相沉积（MOCVD）生长的更薄的MoS 2层的研究证实了这一效应。在原始的、非晶的MoS 2上检测到POMs的短程表面有序。值得注意的是，v12‐DyPc在非晶和多晶退火MoS 2上都表现出相同的多电平开关行为。在MoS 2上，V 12‐DyPc显示出显著降低的横向电子密度分布（3 nm，而在高取向热解石墨（HOPG）上为7 nm）和更正的首次还原电位（分别为3.1 V和2.1 V）。这些变化是由于相对于原子平坦的HOPG衬底，MoS 2的表面粗糙度大大增加，以及修饰的化学环境对MoS 2的影响。密度泛函理论（DFT）和分子力学模拟揭示了面朝键的几何形状、氧化还原能量的改变以及电子态的底物依赖位移。

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引用次数: 0

Quantitative Analysis on the Interaction Between Channel Carrier and Remote Trap in Hf x Zr 1‐x O 2 /SiO 2 Interface in Ferroelectric Field‐Effect‐Transistor 铁电场效应晶体管中Hf × Zr 1‐× o2 / sio2界面沟道载流子与远阱相互作用的定量分析

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2025-12-16 DOI: 10.1002/aelm.202500549

Haneul Lee, Sujong Kim, Changhyeon Han, Haesung Kim, Hyojin Yang, Sejun Park, Sanghyuk Yun, Yoon Jung Lee, Sung‐Jin Choi, Dae Hwan Kim, Dong Myong Kim, Daewoong Kwon, Jong‐Ho Bae

In this work, the polarization‐dependent operating characteristics of TiN/Hf x Zr 1‐x O 2 (HZO)/SiO 2 /Si ferroelectric FETs (FeFETs) are investigated, and remote HZO/SiO 2 interface traps ( D it,FE/DE ) are quantitatively separated from Si/SiO 2 interface traps ( D it0 ). X‐ray photoelectron spectroscopy (XPS) reveals an oxygen‐vacancy ( V O )‐rich HfSiO x layer at the HZO/SiO 2 interface. Based on the transistor operation theory and trap/polarization‐switching charge distribution, the difference in the W1 and W0 states is determined by whether the HZO/SiO 2 interface traps are filled and emptied, respectively. Subthreshold current method (SCM) shows that SS increases from ∼95 mV/dec (W1 state) to 110 mV/dec (W0 state), yielding effective interface trap density ( D it,eff ) values of 4 × 10 12 and 7.8 × 10 12 cm −2 eV −1 , respectively; their difference (3.8 × 10 12 cm −2 eV −1 ) corresponds to D it,FE/DE . Methods that exploit the frequency‐dependent response of the defect states–Multi‐frequency C‐V (MFCV) and Terman method (TM)–yield D it0 and D it,FE/DE values that match the SCM results. Accounting for the capacitive‐projection factor of 2.5, the actual HZO/SiO 2 interface trap density ( D FE/DE ) is ∼1 × 10 13 cm −2 eV −1 , approximately 2.5 times higher than D it0 . The combined SCM‐MFCV‐TM framework thus furnishes a rapid, purely electrical metric for monitoring HZO/SiO 2 quality and guides strategies to suppress remote trap‐carrier interaction (RTCI)‐driven degradation in FeFET performance.

在这项工作中，研究了TiN/Hf × Zr 1 × o2 (HZO)/ sio2 /Si铁电场效应管（fefet）的极化依赖工作特性，并定量地分离了远端HZO/ sio2界面陷阱（dit,FE/DE）和Si/ sio2界面陷阱（dit0）。X射线光电子能谱（XPS）揭示了HZO/ sio2界面上富氧空位（V O）的hfsiox层。基于晶体管工作理论和陷阱/极化开关电荷分布，W1和W0状态的差异取决于HZO/ sio2界面陷阱是否被填充和排空。亚阈值电流法（SCM）显示，SS从~ 95 mV/dec （W1态）增加到110 mV/dec （W0态），有效界面阱密度（dit,eff）分别为4 × 10 12和7.8 × 10 12 cm−2 eV−1；它们的差值（3.8 × 10 12 cm−2 eV−1）对应于dit，FE/DE。利用缺陷状态的频率相关响应的方法-多频率C - V （MFCV）和Terman方法(TM) -产生与SCM结果匹配的dit0和dit0，FE/DE值。考虑到电容投影因子为2.5，实际的HZO/ sio2界面阱密度（dfe /DE）为~ 1 × 10 13 cm−2 eV−1，约为dit0的2.5倍。因此，组合SCM - MFCV - TM框架为监测HZO/ sio2质量提供了快速、纯电度量，并指导抑制远程陷阱-载流子相互作用（RTCI）驱动的ffet性能下降的策略。

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引用次数: 0

Oxygen Plasma‐Treated Dielectric‐Channel Interface for BEOL‐Compatible IGZO TFTs with High Electrical Stability 具有高电稳定性的BEOL兼容IGZO tft的氧等离子体处理介电通道接口

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2025-12-16 DOI: 10.1002/aelm.202500548

Shaocong Lv, Shuaiying Zheng, Xianglong Li, Tan Zhang, Baoqing Zhang, Huayu Feng, Fei Wang, Qian Xin, Yuxiang Li, Jiawei Zhang, Aimin Song

Indium gallium zinc oxide (IGZO) thin film transistors (TFTs) with high stability are highly desired for future memory devices, which demand high stabilities. However, residual precursors inevitably present in the dielectric layers deposited by atomic layer deposition (ALD) introduce hydrogen contamination to the devices, thereby impairing their electrical stabilities. In this work, an effective approach is proposed: performing oxygen plasma treatment on the dielectric‐channel interface to suppress hydrogen diffusion, thereby enhancing the electrical stability of IGZO TFTs. X‐ray photoelectron spectroscopy (XPS) results confirm the suppression effect of oxygen treatment on hydroxyl groups, while time of flight secondary ion mass spectrometry (TOF‐SIMS) revealed a 16.46% reduction in hydrogen content within the treated Al 2 O 3 layer. The devices after treatment exhibited a field‐effect mobility (µ eff ) of 17.4 cm 2 /V·s, a threshold voltage (V TH ) of −0.04 V, and a subthreshold swing (SS) of 84.7 mV/dec, with an optimized oxygen plasma power of 50 W. The positive bias temperature stability of the device is significantly promoted due to reduced hydrogen content. The V TH shift (ΔV TH ) is merely 3.5 mV under a bias electric field of 2 MV/cm for 10 000 s. Such treatment provides a promising solution for the integration of IGZO TFTs with Si‐based electronics.

具有高稳定性的铟镓锌氧化物（IGZO）薄膜晶体管（TFTs）是未来存储器器件中非常需要的高稳定性器件。然而，通过原子层沉积（ALD）沉积的介电层中不可避免地存在残余前驱体，这会给器件带来氢污染，从而损害其电稳定性。在这项工作中，提出了一种有效的方法：在介质-通道界面上进行氧等离子体处理来抑制氢扩散，从而提高IGZO TFTs的电稳定性。X射线光电子能谱（XPS）结果证实了氧处理对羟基的抑制作用，而飞行时间二次离子质谱（TOF - SIMS）结果显示，处理后的al2o3层内氢含量降低了16.46%。处理后器件的场效应迁移率（µeff）为17.4 cm 2 /V·s，阈值电压（V TH）为- 0.04 V，亚阈值摆幅（SS）为84.7 mV/dec，优化氧等离子体功率为50 W。由于氢含量的降低，器件的正偏置温度稳定性显著提高。在2 mV /cm的偏置电场下，持续10000 s， V - TH位移（ΔV TH）仅为3.5 mV。这种处理为IGZO tft与硅基电子器件的集成提供了一个有前途的解决方案。

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引用次数: 0

Opto-Electronic Tuning of Neuron Emulation in Perovskite Volatile Memristive Transistors 钙钛矿易失性记忆电阻晶体管神经元仿真的光电调谐

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2025-12-15 DOI: 10.1002/aelm.202500488

Konstantinos Rogdakis, Georgios Psaltakis, Konstantinos Chatzimanolis, Konstantinos Blazakis, Leandros Spachis, Emmanuel Kymakis

The emulation of neuronal activity requires complex circuits that integrate multiple passive and active components, leading to a high circuit footprint. It is therefore apparent that developing a single device that can be used to emulate both synaptic and neuronal activity would allow less complexity and a much lower circuit footprint having significant impact on practical applications of neuromorphic systems. Herein, mixed halide perovskite-based transistors are demonstrated to exhibit volatile memristive behavior that responds to both light and electric fields, opening the path for optoelectronic control of neuron-like functions. Specifically, it is shown that by applying a low compliance current (I_CC) during drain current–voltage (I_D–V_D) measurements, volatile memristive switching behavior is reported. A set of volatile I_D–V_D curves is presented under various gate biases, indicating a gate-enabled shift of the low-resistance state set voltage to higher values. The volatile nature of the device operated at low I_CC allowed the demonstration of gate-tunable neuronal functions, including amplitude- and frequency-modulated spike firing. Furthermore, linear potentiation protocols and Leaky Integrate-and-Fire behavior is reported, while light pulses are shown to induce both photonic potentiation and graded optical neurons, opening the path for emulating neuron functions tunable by both light and electric fields.

神经元活动的模拟需要复杂的电路，集成多个无源和有源组件，导致高电路占用空间。因此，很明显，开发一种可以用来模拟突触和神经元活动的单一设备将允许更少的复杂性和更低的电路足迹，对神经形态系统的实际应用产生重大影响。本文中，基于混合卤化物钙钛矿的晶体管表现出对光和电场均有响应的易失性忆阻行为，为神经元样功能的光电控制开辟了道路。具体来说，通过在漏极电流-电压（I D -V D）测量期间施加低顺应电流（I CC），报告了挥发性记忆开关行为。在不同的栅极偏置下，一组易失的I - D -V - D曲线显示了栅极使能的低电阻状态设置电压向更高值的移动。该装置在低icc下工作的挥发性特性允许演示门可调神经元功能，包括振幅和频率调制的尖峰放电。此外，线性增强协议和漏积分-和-火行为被报道，而光脉冲被证明可以诱导光子增强和渐变光学神经元，为模拟光和电场可调的神经元功能开辟了道路。

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引用次数: 0

Flicker Noise in Graphene Flake Networks as an Indicator of Their Suitability as Humidity Sensors 石墨烯薄片网络中闪烁噪声作为湿度传感器适用性的指标

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2025-12-15 DOI: 10.1002/aelm.202500522

Jorge Eduardo Adatti Estévez, Hassan Kamel, Annika Weber, David Tumpold, Alexander Zöpfl, Ulrich Krumbein, Max Christian Lemme

Graphene flake dispersions can form conductive thin films via well-established, scalable deposition methods, such as spin-coating. These conductive graphene flake networks constitute sensing layers suitable for chemiresistive CMOS-compatible humidity sensors. Electrical noise is a parameter that affects sensor performance, and minimizing it requires thorough knowledge of the noise and its sources specific to the application. In this work, we present a phenomenological study of noise in resistive graphene sensors made from different graphene flake dispersions. We measured noise as a function of the graphene flake type, thickness of the graphene flake network, and sensor area. We conducted noise and sensitivity measurements to select the most suitable flake type for humidity sensing. We studied the influence of the temperature on the sensitivity and noise, and evaluated the humidity-dependent noise. Finally, a sensor operating mode is defined which enables humidity sensing well beyond the 1 % detection limit and with minimized resistance drift.

石墨烯片分散体可以通过成熟的、可扩展的沉积方法（如自旋镀膜）形成导电薄膜。这些导电石墨烯片网络构成了适合于化学电阻CMOS兼容湿度传感器的传感层。电噪声是影响传感器性能的一个参数，最小化它需要对噪声及其特定应用的来源有透彻的了解。在这项工作中，我们对由不同石墨烯薄片分散体制成的电阻式石墨烯传感器中的噪声进行了现象学研究。我们测量了噪声作为石墨烯薄片类型、石墨烯薄片网络厚度和传感器面积的函数。我们进行了噪声和灵敏度测量，以选择最适合湿度传感的薄片类型。我们研究了温度对灵敏度和噪声的影响，并评估了湿度依赖性噪声。最后，定义了一种传感器工作模式，使湿度传感远远超过1%的检测极限，并具有最小的电阻漂移。

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引用次数: 0

Ethical and Frugal Approaches to Animal Experimentation in Bioelectronics and Neural Engineering—An Invertebrate Renaissance? 生物电子学和神经工程中动物实验的伦理和节俭方法——无脊椎动物的复兴？

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2025-12-13 DOI: 10.1002/aelm.202500450

Eric Daniel Głowacki

The accelerating development of bioelectronic neural interfaces has brought increased attention to ethical considerations surrounding in vivo experimentation, particularly in mammalian models. This commentary advocates for a more frugal, statistically grounded, and ethically mindful approach to animal research in bioelectronics and neural engineering. Emphasizing the principle of the Three Rs—Replace, Reduce, Refine—it argues that many early‐phase device validations do not require mammalian models and can benefit from a revival of invertebrate systems. Historically foundational to the field of electrophysiology, invertebrates offer cost‐effective, ethically advantageous platforms for prototyping and training. These models allow researchers to rigorously test novel materials and device concepts in vivo before transitioning to mammalian studies, improving both experimental design and animal welfare. This article discusses several example model systems and considers the associated advantages and disadvantages of each model. Reframing experimental priorities and reviewing practices around animal use can lead to more scientifically justified and resource‐conscious bioelectronics research.

生物电子神经接口的加速发展引起了人们对体内实验，特别是哺乳动物模型中伦理问题的关注。这篇评论提倡在生物电子学和神经工程中采用一种更节俭、更有统计学基础、更有道德意识的方法来进行动物研究。强调三个r的原则——替换（replace）、减少（Reduce）、改进（refine）——它认为，许多早期设备验证不需要哺乳动物模型，可以从无脊椎动物系统的复兴中受益。无脊椎动物是电生理学领域的历史基础，为原型设计和培训提供了具有成本效益和伦理优势的平台。这些模型允许研究人员在过渡到哺乳动物研究之前在体内严格测试新材料和设备概念，从而改善实验设计和动物福利。本文讨论了几个示例模型系统，并考虑了每个模型的相关优点和缺点。重新制定实验重点和审查动物使用的实践可以使生物电子学研究更加科学合理和具有资源意识。

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引用次数: 0

Variations in Local Oscillatory Dynamics in Strained LSMO Thin Films, Observed in Non Equilibrium Transport Studies, for Brain Networks 脑网络非平衡输运研究中观察到的应变LSMO薄膜局部振荡动力学的变化

IF 6.2 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials

Pub Date : 2025-12-13 DOI: 10.1002/aelm.202500676

Hitesh Chhabra, Isidro Fernandez Garcia, Azminul Jaman, Tamalika Banerjee

Strong correlation effects in transition metal oxides and their sensitivity to external stimuli in driving phase transitions have been widely explored. However, the richness of the metastable and coexisting quantum states beyond the phase transition temperature is less explored. We employ a highly strained manganite film on a twinned substrate of and show that the cumulative effect of such structural disorder leads to temperature‐driven subtleties in the orbital hybridization of the coexisting ground states. This drives the film to electrical instabilities and the associated non linear transport leads to oscillatory dynamics, mimicking neurons with frequencies that are within the range of frequencies associated with brain waves. Our findings open up possibilities for on‐demand tailoring of such devices for applications in brain‐computer interfacing.

过渡金属氧化物的强相关效应及其对外部刺激的敏感性在驱动相变过程中得到了广泛的研究。然而，超越相变温度的亚稳态和共存量子态的丰富度却很少被探索。我们在双晶衬底上采用了高应变的锰酸盐薄膜，并证明了这种结构无序的累积效应导致共存基态轨道杂化的温度驱动的微妙性。这使得薄膜具有电不稳定性，相关的非线性传输导致振荡动力学，以与脑电波相关的频率范围内的频率模仿神经元。我们的发现为按需定制此类设备在脑机接口中的应用开辟了可能性。

引用次数: 0