Lingxiang Hu, Xia Zhuge, Jingrui Wang, Xianhua Wei, Li Zhang, Yang Chai, Xiaoyong Xue, Zhizhen Ye, Fei Zhuge
Brain-inspired neuromorphic computing is recognized as a promising technology for implementing human intelligence in hardware. Neuromorphic devices, including artificial synapses and neurons, are regarded as essential components for the construction of neuromorphic hardware systems. Recently, optoelectronic neuromorphic devices are increasingly highlighted due to their potential applications in next-generation artificial visual systems, attributed to their integrated sensing, computing, and memory capabilities. In this review, recent advancements in optoelectronic synapses and neurons are examined, with an emphasis on their structural characteristics, operational principles, and the replication of neuromorphic functions. For optoelectronic synaptic devices, such as memristor- and transistor-based ones, attention is given to the two primary weight update modes: the light-electricity synergistic mode and the all-optical mode. Optoelectronic neurons are discussed in terms of different device types, including threshold switch neurons and semiconductor laser neurons. Last, the challenges that impede the progress of optoelectronic neuromorphic devices are identified, and potential future directions are suggested.
{"title":"Emerging Optoelectronic Devices for Brain-Inspired Computing","authors":"Lingxiang Hu, Xia Zhuge, Jingrui Wang, Xianhua Wei, Li Zhang, Yang Chai, Xiaoyong Xue, Zhizhen Ye, Fei Zhuge","doi":"10.1002/aelm.202400482","DOIUrl":"https://doi.org/10.1002/aelm.202400482","url":null,"abstract":"Brain-inspired neuromorphic computing is recognized as a promising technology for implementing human intelligence in hardware. Neuromorphic devices, including artificial synapses and neurons, are regarded as essential components for the construction of neuromorphic hardware systems. Recently, optoelectronic neuromorphic devices are increasingly highlighted due to their potential applications in next-generation artificial visual systems, attributed to their integrated sensing, computing, and memory capabilities. In this review, recent advancements in optoelectronic synapses and neurons are examined, with an emphasis on their structural characteristics, operational principles, and the replication of neuromorphic functions. For optoelectronic synaptic devices, such as memristor- and transistor-based ones, attention is given to the two primary weight update modes: the light-electricity synergistic mode and the all-optical mode. Optoelectronic neurons are discussed in terms of different device types, including threshold switch neurons and semiconductor laser neurons. Last, the challenges that impede the progress of optoelectronic neuromorphic devices are identified, and potential future directions are suggested.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Nawel Meftah, Badreddine Ratni, Mohammed Nabil El Korso, Shah Nawaz Burokur
Due to its growing importance and wide range of applications, direction-of-arrival (DOA) estimation has become a major research topic, particularly in the field of communication systems. While traditional DOA estimation methods rely on antenna arrays and complex algorithms, recent progress achieved in the design and implementation of metasurfaces has proved their effectiveness as promising alternatives. This study presents a distinct approach for DOA estimation that combines the use of a programmable metasurface with deep learning. The programmable metasurface together with a radio-frequency power detector placed at the focal point, acts as a parabolic reflector antenna with an adjustable pointing direction, which scans the azimuth plane in 5° increments to receive the power level of incoming signals. The collected data is then fed into a pre-trained multilayer neural network to enable DOA estimation with a resolution of lower than 1° without requiring fine-tuning of the scanning procedure. This approach ensures accurate and fast estimations, paving the way for advanced solutions in detection and localization for various applications.
由于到达方向（DOA）估计的重要性和广泛应用，它已成为一个重要的研究课题，尤其是在通信系统领域。传统的 DOA 估计方法依赖于天线阵列和复杂的算法，而最近在元表面设计和实现方面取得的进展证明了元表面作为有前途的替代方法的有效性。本研究提出了一种独特的 DOA 估算方法，将可编程元面的使用与深度学习相结合。可编程元面与放置在焦点处的射频功率检测器一起，就像一个抛物面反射天线，其指向方向可调，以 5° 为增量扫描方位平面，以接收传入信号的功率水平。然后将收集到的数据输入预先训练好的多层神经网络，以实现分辨率低于 1° 的 DOA 估计，而无需对扫描程序进行微调。这种方法确保了估算的准确性和快速性，为各种应用的探测和定位的先进解决方案铺平了道路。
{"title":"Enhanced-Resolution Learning-Based Direction of Arrival Estimation by Programmable Metasurface","authors":"Nawel Meftah, Badreddine Ratni, Mohammed Nabil El Korso, Shah Nawaz Burokur","doi":"10.1002/aelm.202400476","DOIUrl":"https://doi.org/10.1002/aelm.202400476","url":null,"abstract":"Due to its growing importance and wide range of applications, direction-of-arrival (DOA) estimation has become a major research topic, particularly in the field of communication systems. While traditional DOA estimation methods rely on antenna arrays and complex algorithms, recent progress achieved in the design and implementation of metasurfaces has proved their effectiveness as promising alternatives. This study presents a distinct approach for DOA estimation that combines the use of a programmable metasurface with deep learning. The programmable metasurface together with a radio-frequency power detector placed at the focal point, acts as a parabolic reflector antenna with an adjustable pointing direction, which scans the azimuth plane in 5° increments to receive the power level of incoming signals. The collected data is then fed into a pre-trained multilayer neural network to enable DOA estimation with a resolution of lower than 1° without requiring fine-tuning of the scanning procedure. This approach ensures accurate and fast estimations, paving the way for advanced solutions in detection and localization for various applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159020","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Cs3Bi2I9/ZnO heterostructures are constructed by the growth of Cs3Bi2I9 layer onto the spin-coated ZnO films by a modified antisolvent recrystallization method, a series of Cs3Bi2I9/ZnO heterojunction photodetectors (PDs) with varied growth times of Cs3Bi2I9 layer are fabricated. The construction of Cs3Bi2I9/ZnO heterojunction contributes to their improved photoelectric performance compared to ZnO-based PD, and the Cs3Bi2I9 layer thickness plays an important role in tuning the photoelectric performance of these PDs. At 405 nm and 0 V bias, the optimized 6-Cs3Bi2I9/ZnO PD generates a high photocurrent of −3.03 µA, a medium on/off ratio of 144.3, and a short response time of 16.4 ms/16.8 ms. It also exhibits superior dual-band self-powered photoresponse with two responsivity and detectivity peaks at 380 nm in the UV region and at 430 nm in the visible light region. At 380 nm, this PD presents the highest responsivity of 33.2 mA W−1 and detectivity of 1.07 × 1010 Jones. It is believed that the optimized growth of the Cs3Bi2I9 layer generates a depletion layer with suitable thickness near the interface, and the as-promoted charge-carrier separation and transport result in improved self-powered properties. The rational construction of perovskite-based heterojunction has proved as an efficient way to achieve self-powered photodetection.
{"title":"Self-Powered Cs3Bi2I9/ZnO Heterojunction Photodetector with Dual-Band Photoresponse","authors":"Weixin Ouyang","doi":"10.1002/aelm.202400514","DOIUrl":"https://doi.org/10.1002/aelm.202400514","url":null,"abstract":"Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>/ZnO heterostructures are constructed by the growth of Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> layer onto the spin-coated ZnO films by a modified antisolvent recrystallization method, a series of Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>/ZnO heterojunction photodetectors (PDs) with varied growth times of Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> layer are fabricated. The construction of Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>/ZnO heterojunction contributes to their improved photoelectric performance compared to ZnO-based PD, and the Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> layer thickness plays an important role in tuning the photoelectric performance of these PDs. At 405 nm and 0 V bias, the optimized 6-Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>/ZnO PD generates a high photocurrent of −3.03 µA, a medium on/off ratio of 144.3, and a short response time of 16.4 ms/16.8 ms. It also exhibits superior dual-band self-powered photoresponse with two responsivity and detectivity peaks at 380 nm in the UV region and at 430 nm in the visible light region. At 380 nm, this PD presents the highest responsivity of 33.2 mA W<sup>−1</sup> and detectivity of 1.07 × 10<sup>10</sup> Jones. It is believed that the optimized growth of the Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> layer generates a depletion layer with suitable thickness near the interface, and the as-promoted charge-carrier separation and transport result in improved self-powered properties. The rational construction of perovskite-based heterojunction has proved as an efficient way to achieve self-powered photodetection.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shuxian Lyu, Xiao Long, Yang Yang, Wei Wei, Yuanxiang Chen, Hong Xie, Bowen Nie, Boping Wang, Yuan Wang, Pengfei Jiang, Tiancheng Gong, Yan Wang, Qing Luo
Electro-resistance (ER) plays a crucial role in the application of hafnia-based ferroelectric tunnel junctions (FTJs), pivotal devices widely acknowledge for their potential in non-volatile memory and neuromorphic networks. Leveraging atomic layer deposition (ALD) enhances the flexibility in fabricating bilayer FTJs by combining a ferroelectric layer with another oxide layer. Introducing additional layers is necessary to achieve a sufficient storage window for implementing intriguing functions, albeit at the risk of increased depolarization field strength. Hence, selecting a suitable inserted layer becomes paramount. In this study, a novel strategy to enhance the performance of Ge-based Hf0.5Zr0.5O2 FTJs is presented by incorporating bottom interfacial layers (ILs) with distinct band energy characteristics. The optimized FTJs exhibit significantly improved endurance, lower coercive voltage, and enhanced retention properties. Notably, an intriguing asymmetric retention behavior driven by the imprint field (Eimp) is observed, which can be mitigated by integrating TiO2 ILs. Most importantly, an effective method to manipulate depolarization behavior in hafnia-based devices through ILs is introduced, leading to enhanced non-volatility and synaptic behavior in FTJs.
基于铪的铁电隧道结（FTJ）是一种关键器件，因其在非易失性存储器和神经形态网络中的潜力而得到广泛认可。利用原子层沉积（ALD）技术，通过将铁电层与另一层氧化物相结合，提高了制造双层铁电隧道结的灵活性。为了获得足够的存储窗口以实现复杂的功能，有必要引入额外的层，但这有可能增加去极化场强。因此，选择合适的插入层变得至关重要。本研究提出了一种新策略，通过加入具有不同带能特性的底部界面层（IL）来提高 Ge 基 Hf0.5Zr0.5O2 FTJ 的性能。优化后的 FTJs 具有明显改善的耐久性、更低的矫顽力电压和更强的保持特性。值得注意的是，在印记场（Eimp）的驱动下，观察到了一种有趣的非对称保持行为，通过整合 TiO2 IL，这种行为可以得到缓解。最重要的是，该研究引入了一种有效的方法，通过IL操纵基于铪的器件中的去极化行为，从而增强了FTJ的非挥发性和突触行为。
{"title":"Enhanced Electro-Resistance and Tunable Asymmetric Depolarization Behavior in Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction by Bottom Oxide Interfacial Layer","authors":"Shuxian Lyu, Xiao Long, Yang Yang, Wei Wei, Yuanxiang Chen, Hong Xie, Bowen Nie, Boping Wang, Yuan Wang, Pengfei Jiang, Tiancheng Gong, Yan Wang, Qing Luo","doi":"10.1002/aelm.202400466","DOIUrl":"https://doi.org/10.1002/aelm.202400466","url":null,"abstract":"Electro-resistance (<i>ER</i>) plays a crucial role in the application of hafnia-based ferroelectric tunnel junctions (FTJs), pivotal devices widely acknowledge for their potential in non-volatile memory and neuromorphic networks. Leveraging atomic layer deposition (ALD) enhances the flexibility in fabricating bilayer FTJs by combining a ferroelectric layer with another oxide layer. Introducing additional layers is necessary to achieve a sufficient storage window for implementing intriguing functions, albeit at the risk of increased depolarization field strength. Hence, selecting a suitable inserted layer becomes paramount. In this study, a novel strategy to enhance the performance of Ge-based Hf<sub>0.5</sub>Zr<sub>0.5</sub>O<sub>2</sub> FTJs is presented by incorporating bottom interfacial layers (ILs) with distinct band energy characteristics. The optimized FTJs exhibit significantly improved endurance, lower coercive voltage, and enhanced retention properties. Notably, an intriguing asymmetric retention behavior driven by the imprint field (<i>E<sub>imp</sub></i>) is observed, which can be mitigated by integrating TiO<sub>2</sub> ILs. Most importantly, an effective method to manipulate depolarization behavior in hafnia-based devices through ILs is introduced, leading to enhanced non-volatility and synaptic behavior in FTJs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuteng Zhang, Seyed Ehsan Alavi, Ion Soroceanu, Dennis Wanyoike Kamau, Aurelian Rotaru, Isabelle Séguy, Lionel Salmon, Gábor Molnár, Azzedine Bousseksou
An organic semiconductor – spin crossover polymer composite heterostructure is fabricated, and it is integrated into an organic field-effect transistor (OFET) with the aim to achieve electrical sensing of molecular spin state switching events. The OFETs display ≈50–70% increase in drain-source current intensity when going from the low spin (LS) to the high spin (HS) state. This phenomenon is reversible without apparent fatigue and the application of a gate voltage significantly enhances the sensing sensitivity. Capacitance measurements and finite element calculations allow identifying mechanical stress, induced by the spin state switching, at the origin of the transistor response. These results open up appealing perspectives for the integration of spin crossover molecules into technological applications, such as soft robotics .
{"title":"Electrical Sensing of Molecular Spin State Switching in a Spin Crossover Complex Using an Organic Field-Effect Transistor","authors":"Yuteng Zhang, Seyed Ehsan Alavi, Ion Soroceanu, Dennis Wanyoike Kamau, Aurelian Rotaru, Isabelle Séguy, Lionel Salmon, Gábor Molnár, Azzedine Bousseksou","doi":"10.1002/aelm.202400590","DOIUrl":"https://doi.org/10.1002/aelm.202400590","url":null,"abstract":"An organic semiconductor – spin crossover polymer composite heterostructure is fabricated, and it is integrated into an organic field-effect transistor (OFET) with the aim to achieve electrical sensing of molecular spin state switching events. The OFETs display ≈50–70% increase in drain-source current intensity when going from the low spin (LS) to the high spin (HS) state. This phenomenon is reversible without apparent fatigue and the application of a gate voltage significantly enhances the sensing sensitivity. Capacitance measurements and finite element calculations allow identifying mechanical stress, induced by the spin state switching, at the origin of the transistor response. These results open up appealing perspectives for the integration of spin crossover molecules into technological applications, such as soft robotics\u0000.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sten Gebel, Oumaima Aiboudi, Vladimir Grigorescu, Zhitian Ling, Tomasz Marszalek, Paul W. M. Blom, Charusheela Ramanan, Franziska Lissel, Ulrike Kraft
An innovative possibility to introduce additional functionality to organic field-effect transistors (OFETs) is to employ photochromic molecules, which undergo reversible isomerization under applied stimuli such as irradiation with specific wavelengths. As a result, the transistors not only can be switched on/off by the applied voltages, they can also be programmed by alternate triggers, such as light. Here, reversible switching of OFETs is presented by blending various dihydroazulene/vinylheptafulvene photoswitches into polythiophene-based conjugated polymers. In result, the transfer characteristics of the transistors are altered significantly through UV irradiation. In contrast to current literature on different photoswitches such as spiropyrans or diarylethenes, the backreaction is induced thermally and not via visible light irradiation and reproducibly yields the pristine transistor characteristics. This reversible switching upon alternating UV irradiation and thermal annealing is quantified by figures of merit such as the magnitude of drain current, threshold voltage, and subthreshold swing. Irradiating the devices with different doses of UV light shows that the magnitude of switching directly depends on the respective UV dose, hence enabling a multi-level electronic system. Furthermore, long-term cyclability over 100 steps of repeated UV light exposure and thermal annealing is demonstrated.
{"title":"Reversible Switching of Light-Gated Organic Transistors Employing Dihydroazulene/Vinylheptafulvene Photo-/Thermochromic Molecules","authors":"Sten Gebel, Oumaima Aiboudi, Vladimir Grigorescu, Zhitian Ling, Tomasz Marszalek, Paul W. M. Blom, Charusheela Ramanan, Franziska Lissel, Ulrike Kraft","doi":"10.1002/aelm.202400455","DOIUrl":"https://doi.org/10.1002/aelm.202400455","url":null,"abstract":"An innovative possibility to introduce additional functionality to organic field-effect transistors (OFETs) is to employ photochromic molecules, which undergo reversible isomerization under applied stimuli such as irradiation with specific wavelengths. As a result, the transistors not only can be switched on/off by the applied voltages, they can also be programmed by alternate triggers, such as light. Here, reversible switching of OFETs is presented by blending various dihydroazulene/vinylheptafulvene photoswitches into polythiophene-based conjugated polymers. In result, the transfer characteristics of the transistors are altered significantly through UV irradiation. In contrast to current literature on different photoswitches such as spiropyrans or diarylethenes, the backreaction is induced thermally and not via visible light irradiation and reproducibly yields the pristine transistor characteristics. This reversible switching upon alternating UV irradiation and thermal annealing is quantified by figures of merit such as the magnitude of drain current, threshold voltage, and subthreshold swing. Irradiating the devices with different doses of UV light shows that the magnitude of switching directly depends on the respective UV dose, hence enabling a multi-level electronic system. Furthermore, long-term cyclability over 100 steps of repeated UV light exposure and thermal annealing is demonstrated.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-09-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142159023","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In article number 2300816, Zhihui Wang, Zhengran Yi, and co-workers propose a novel “regional conjugation” strategy to design an intrinsically stretchable high-performance polymer semiconductor. It enables excellent charge transport performance of fully stretchable transistors under large mechanical strain. This strategy provides a promising methodology for developing mechanically robust stretchable polymer thin film electronics.
Oradee Srikimkaew, Saman Azhari, Deep Banerjee, Yuki Usami, Hirofumi Tanaka
The synaptic plasticity of the Ag-Ag2S nanoparticle-based volatile memristor system is demonstrated. The nanoparticles self-assemble into a network with over 103 interconnected atomic switch interfaces. Short-term plasticity is identified by spontaneous conductance relaxation, attributed to the memristor's volatility. The conductance of the network is enhanced when a subsequent stimulus pulse arrives shortly after the previous one, analogous to the paired-pulse facilitation in biological synapses. Furthermore, repeated pulse stimulation is used to achieve the transition from short-term plasticity to long-term potentiation, a process related to learning and memory formation. Remarkably, the result reveals that the lifetime of long-term potentiation for 100-pulse stimulation is 40 min, indicating that the device can forget newly acquired information after prolonged storage, akin to human memories. The findings provide insight into the the learning and memory abilities of atomic switch network memristors, facilitating the development of hardware-implemented artificial neural networks.
{"title":"Short-Term and Long-Term Memory Functionality of a Brain-Like Device Built from Nanoparticle Atomic Switch Networks","authors":"Oradee Srikimkaew, Saman Azhari, Deep Banerjee, Yuki Usami, Hirofumi Tanaka","doi":"10.1002/aelm.202400360","DOIUrl":"https://doi.org/10.1002/aelm.202400360","url":null,"abstract":"The synaptic plasticity of the Ag-Ag<sub>2</sub>S nanoparticle-based volatile memristor system is demonstrated. The nanoparticles self-assemble into a network with over 10<sup>3</sup> interconnected atomic switch interfaces. Short-term plasticity is identified by spontaneous conductance relaxation, attributed to the memristor's volatility. The conductance of the network is enhanced when a subsequent stimulus pulse arrives shortly after the previous one, analogous to the paired-pulse facilitation in biological synapses. Furthermore, repeated pulse stimulation is used to achieve the transition from short-term plasticity to long-term potentiation, a process related to learning and memory formation. Remarkably, the result reveals that the lifetime of long-term potentiation for 100-pulse stimulation is 40 min, indicating that the device can forget newly acquired information after prolonged storage, akin to human memories. The findings provide insight into the the learning and memory abilities of atomic switch network memristors, facilitating the development of hardware-implemented artificial neural networks.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-09-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142144472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Compensation has been a common while unacknowledged strategy in the design of computing-in-memory (CIM) schemes. It enables efficient CIM designs by intentionally letting the sum of capacitances or conductances of two or more rows or columns in the memory array equal, thus resulting in a concise mathematical formula regarding the memory cell data and the input data, which constitute computing primitives. Here, the capacitance and conductance compensation methods are reviewed that have been used for CIM designs based on static random-access memory (SRAM) in combination with capacitors and nonvolatile resistive memory, respectively, and uncover the underlying principles and their application to CIM. It is hoped this effort will help recognize the compensation methods as a building block for CIM designs, and will be an inspiration to developing more CIM schemes that are more compact in area, more efficient in energy consumption, and capable of solving more complicated problems.
{"title":"Capacitance and Conductance Compensation Methods for Efficient Computing-In-Memory Designs","authors":"Yubiao Luo, Fei Qiao, Zhong Sun","doi":"10.1002/aelm.202400452","DOIUrl":"https://doi.org/10.1002/aelm.202400452","url":null,"abstract":"Compensation has been a common while unacknowledged strategy in the design of computing-in-memory (CIM) schemes. It enables efficient CIM designs by intentionally letting the sum of capacitances or conductances of two or more rows or columns in the memory array equal, thus resulting in a concise mathematical formula regarding the memory cell data and the input data, which constitute computing primitives. Here, the capacitance and conductance compensation methods are reviewed that have been used for CIM designs based on static random-access memory (SRAM) in combination with capacitors and nonvolatile resistive memory, respectively, and uncover the underlying principles and their application to CIM. It is hoped this effort will help recognize the compensation methods as a building block for CIM designs, and will be an inspiration to developing more CIM schemes that are more compact in area, more efficient in energy consumption, and capable of solving more complicated problems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-09-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142142903","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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