Qin Xie, Xinqiang Pan, Wenbo Luo, Yao Shuai, Yi Wang, Junde Tong, Zebin Zhao, Chuangui Wu, Wanli Zhang
Memristors are recognized as crucial devices for the hardware implementation of neuromorphic computing. The conductance training process of memristors has a direct impact on the performance of neuromorphic computing. However, memristor breakdown and conductance decay still hinder the precise training process of neural networks based on passive memristor. Here, AlOx/LiNbO3 (LN) memristors are designed by inserting a AlOx sub‐oxide layer between the single‐crystalline LN thin film with oxygen vacancies (OVs) and Pt layer. Under the same training conditions, lower conductance and self‐compliance current effects are observed in AlOx/LN memristor. Slight spontaneous decay of conductance is achieved after the removal of the external stimulation. To explore the effects of AlOx sub‐oxide layer on the prevention of device breakdown and suppression of conductance decay, the memristive mechanism of devices with and without AlOx layer is revealed via time‐of‐flight secondary ion mass spectrometer (ToF‐SIMS). It is reasonable to believe that the AlOx inserting layer in memristors can serve as a self‐compliance current layer to inhibit device breakdown and provide the OVs reservoir to suppress conductance decay. These results offer new possibilities and theoretical grounds for achieving more reliable and precise conductance training of passive memristors.
忆阻器被认为是神经形态计算硬件实施的关键设备。忆阻器的电导训练过程直接影响着神经形态计算的性能。然而，忆阻器击穿和电导衰减仍然阻碍着基于无源忆阻器的神经网络的精确训练过程。在这里，通过在带有氧空位（OVs）的单晶 LN 薄膜和铂层之间插入 AlOx 亚氧化物层，设计出了 AlOx/LiNbO3 （LN）忆阻器。在相同的训练条件下，AlOx/LN忆阻器的电导和自顺应电流效应较低。移除外部刺激后，电导会出现轻微的自发衰减。为了探索亚氧化铝层对防止器件击穿和抑制电导衰减的影响，我们通过飞行时间二次离子质谱仪（ToF-SIMS）揭示了有亚氧化铝层和无亚氧化铝层器件的忆阻器机理。我们有理由相信，忆阻器中的氧化铝插入层可以作为抑制器件击穿的自顺应电流层，并为抑制电导衰减提供 OV 储存。这些结果为实现更可靠、更精确的被动式忆阻器电导训练提供了新的可能性和理论依据。
{"title":"Effects of AlOx Sub‐Oxide Layer on Conductance Training of Passive Memristor for Neuromorphic Computing","authors":"Qin Xie, Xinqiang Pan, Wenbo Luo, Yao Shuai, Yi Wang, Junde Tong, Zebin Zhao, Chuangui Wu, Wanli Zhang","doi":"10.1002/aelm.202400651","DOIUrl":"https://doi.org/10.1002/aelm.202400651","url":null,"abstract":"Memristors are recognized as crucial devices for the hardware implementation of neuromorphic computing. The conductance training process of memristors has a direct impact on the performance of neuromorphic computing. However, memristor breakdown and conductance decay still hinder the precise training process of neural networks based on passive memristor. Here, AlO<jats:sub>x</jats:sub>/LiNbO<jats:sub>3</jats:sub> (LN) memristors are designed by inserting a AlO<jats:sub>x</jats:sub> sub‐oxide layer between the single‐crystalline LN thin film with oxygen vacancies (OVs) and Pt layer. Under the same training conditions, lower conductance and self‐compliance current effects are observed in AlO<jats:sub>x</jats:sub>/LN memristor. Slight spontaneous decay of conductance is achieved after the removal of the external stimulation. To explore the effects of AlO<jats:sub>x</jats:sub> sub‐oxide layer on the prevention of device breakdown and suppression of conductance decay, the memristive mechanism of devices with and without AlO<jats:sub>x</jats:sub> layer is revealed via time‐of‐flight secondary ion mass spectrometer (ToF‐SIMS). It is reasonable to believe that the AlO<jats:sub>x</jats:sub> inserting layer in memristors can serve as a self‐compliance current layer to inhibit device breakdown and provide the OVs reservoir to suppress conductance decay. These results offer new possibilities and theoretical grounds for achieving more reliable and precise conductance training of passive memristors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"33 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142541324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ke Zhang, Michał Borkowski, Philipp Wucher, Pierre M. Beaujuge, Jasper Michels, Paul. W. M. Blom, Tomasz Marszalek, Wojciech Pisula
Adv. Electron. Mater. 2021, 7, 2100397
DOI: 10.1002/aelm.202100397
We would like to correct the Acknowledgements into:
Acknowledgments
K.Z. thanks the China Scholarship Council (CSC) for financial support. M.B. and T.M. acknowledge the Foundation for Polish Science financed by the European Union under the European Regional Development Fund (POIR.04.04.00-00-3ED8/17). W.P. acknowledges the National Science Centre, Poland through grant UMO-2015/18/E/ST3/00322.
Open access funding enabled and organized by Projekt DEAL.
{"title":"Correction to “Relation between Spherulitic Growth, Molecular Organization and Charge Carrier Transport in Meniscus-Guided Coated Organic Semiconducting Films”","authors":"Ke Zhang, Michał Borkowski, Philipp Wucher, Pierre M. Beaujuge, Jasper Michels, Paul. W. M. Blom, Tomasz Marszalek, Wojciech Pisula","doi":"10.1002/aelm.202400729","DOIUrl":"https://doi.org/10.1002/aelm.202400729","url":null,"abstract":"<p><i>Adv. Electron. Mater</i>. <b>2021</b>, <i>7</i>, 2100397</p>\u0000<p>DOI: 10.1002/aelm.202100397</p>\u0000<p>We would like to correct the Acknowledgements into:</p>\u0000<p>Acknowledgments</p>\u0000<p>K.Z. thanks the China Scholarship Council (CSC) for financial support. M.B. and T.M. acknowledge the Foundation for Polish Science financed by the European Union under the European Regional Development Fund (POIR.04.04.00-00-3ED8/17). W.P. acknowledges the National Science Centre, Poland through grant UMO-2015/18/E/ST3/00322.</p>\u0000<p>Open access funding enabled and organized by Projekt DEAL.</p>\u0000<p>Thank you for your kind consideration.</p>\u0000<p><img alt=\"image\" loading=\"lazy\" src=\"/cms/asset/84c64742-1864-4057-bcbc-c5279b9277f0/aelm968-gra-0001.png\"/></p>\u0000<p>Wojciech Pisula</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"61 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142490962","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Abolfazl Mahmoodpoor, Alexandr Marunchenko, Sergey Makarov
Memristors have gained significant attention in recent years due to their potential applications in computing and memory technology by offering higher performance, lower power consumption, and increased storage capacity. In this paper, a new type of volatile memristor is presented by analyzing the dynamic behavior of charge carriers within a metal–semiconductor–metal (MSM) structure. It is shown that an all-electronic memristor is achieved through the confinement of majority charge carriers within the bulk semiconductor by the favor of high barrier Schottky contacts. The findings reveal a remarkable current offset between forward and backward scans, along with exceptional current pulse consistency with a tunable current level using pulse frequency. These characteristics greatly simplify the process of designing electrical circuits incorporating this memristor variant. Furthermore, this research paves the way for the development of crystalline semiconductor-based memristors. While various semiconductors with controllable doping densities can be considered as potential candidates for this type of memristor, the calculations using silicon demonstrate the integration of this semiconductor with the current technology holds significant promise for two terminal memristors.
{"title":"All-Electronic Memristor Based on Charge Carrier Confinement in Bulk Semiconductor of Metal–Semiconductor–Metal Structure","authors":"Abolfazl Mahmoodpoor, Alexandr Marunchenko, Sergey Makarov","doi":"10.1002/aelm.202400396","DOIUrl":"https://doi.org/10.1002/aelm.202400396","url":null,"abstract":"Memristors have gained significant attention in recent years due to their potential applications in computing and memory technology by offering higher performance, lower power consumption, and increased storage capacity. In this paper, a new type of volatile memristor is presented by analyzing the dynamic behavior of charge carriers within a metal–semiconductor–metal (MSM) structure. It is shown that an all-electronic memristor is achieved through the confinement of majority charge carriers within the bulk semiconductor by the favor of high barrier Schottky contacts. The findings reveal a remarkable current offset between forward and backward scans, along with exceptional current pulse consistency with a tunable current level using pulse frequency. These characteristics greatly simplify the process of designing electrical circuits incorporating this memristor variant. Furthermore, this research paves the way for the development of crystalline semiconductor-based memristors. While various semiconductors with controllable doping densities can be considered as potential candidates for this type of memristor, the calculations using silicon demonstrate the integration of this semiconductor with the current technology holds significant promise for two terminal memristors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"60 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Henrique Frulani de Paula Barbosa, Andreas Schander, Andika Asyuda, Luka Bislich, Sarah Bornemann, Björn Lüssem
Artificial Neural Networks (ANN) require a better platform to reduce their energy consumption and achieve their full potential. Electrochemical devices like the Electrochemical Neuromorphic Organic Device (ENODe) stand out as a potential building block for ANNs, due to their lower energy demand, in addition to their biocompatibility and access to multiple and stable memory levels. However, the non-volatile effect observed in these devices is not yet fully understood. Hence, here we propose a 2D drift-diffusion model that is capable to reproduce the device behavior. The model relies on the assumption of trapping sites for cations, which are increasingly filled or emptied during subsequent pre-synaptic pulses. The model is verified by experiments on devices with varying post-synaptic dimensions. Overall, the results provide a framework to discuss ENODe operation and design strategies for ENODes with well-controlled memory states.
{"title":"Role of Trapping in Non-Volatility of Electrochemical Neuromorphic Organic Devices","authors":"Henrique Frulani de Paula Barbosa, Andreas Schander, Andika Asyuda, Luka Bislich, Sarah Bornemann, Björn Lüssem","doi":"10.1002/aelm.202400481","DOIUrl":"https://doi.org/10.1002/aelm.202400481","url":null,"abstract":"Artificial Neural Networks (ANN) require a better platform to reduce their energy consumption and achieve their full potential. Electrochemical devices like the Electrochemical Neuromorphic Organic Device (ENODe) stand out as a potential building block for ANNs, due to their lower energy demand, in addition to their biocompatibility and access to multiple and stable memory levels. However, the non-volatile effect observed in these devices is not yet fully understood. Hence, here we propose a 2D drift-diffusion model that is capable to reproduce the device behavior. The model relies on the assumption of trapping sites for cations, which are increasingly filled or emptied during subsequent pre-synaptic pulses. The model is verified by experiments on devices with varying post-synaptic dimensions. Overall, the results provide a framework to discuss ENODe operation and design strategies for ENODes with well-controlled memory states.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"67 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486436","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anna N. Morozovska, Eugene A. Eliseev, Yulian M. Vysochanskii, Sergei V. Kalinin, Maksym V. Strikha
Analytical calculations corroborated by the finite element modeling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to the negative capacitance (NC) effect emerging in the thin films. The NC state is conditioned by energy-degenerated poly-domain states of the ferrielectric polarization induced in the films under incomplete screening conditions in the presence of a dielectric layer. Calculations performed for the FET-type heterostructure “ferrielectric CuInP2S6 film—2D-MoS2 single-layer—SiO2 dielectric layer” reveal the pronounced size effect of the multilayer capacitance. Derived analytical expressions for the electric polarization and multilayer capacitance allow to predict the thickness range of the dielectric layer and ferrielectric film for which the NC effect is the most pronounced in various Van der Waals ferrielectrics, and the corresponding subthreshold swing becomes much less than the Boltzmann's limit. Obtained results can be useful for the size and temperature control of the NC effect in the steep-slope ferrielectric FETs.
{"title":"Size Effect of Negative Capacitance State and Subthreshold Swing in Van der Waals Ferrielectric Field-Effect Transistors","authors":"Anna N. Morozovska, Eugene A. Eliseev, Yulian M. Vysochanskii, Sergei V. Kalinin, Maksym V. Strikha","doi":"10.1002/aelm.202400495","DOIUrl":"https://doi.org/10.1002/aelm.202400495","url":null,"abstract":"Analytical calculations corroborated by the finite element modeling show that thin films of Van der Waals ferrielectrics covered by a 2D-semiconductor are promising candidates for the controllable reduction of the dielectric layer capacitance due to the negative capacitance (NC) effect emerging in the thin films. The NC state is conditioned by energy-degenerated poly-domain states of the ferrielectric polarization induced in the films under incomplete screening conditions in the presence of a dielectric layer. Calculations performed for the FET-type heterostructure “ferrielectric CuInP<sub>2</sub>S<sub>6</sub> film—2D-MoS<sub>2</sub> single-layer—SiO<sub>2</sub> dielectric layer” reveal the pronounced size effect of the multilayer capacitance. Derived analytical expressions for the electric polarization and multilayer capacitance allow to predict the thickness range of the dielectric layer and ferrielectric film for which the NC effect is the most pronounced in various Van der Waals ferrielectrics, and the corresponding subthreshold swing becomes much less than the Boltzmann's limit. Obtained results can be useful for the size and temperature control of the NC effect in the steep-slope ferrielectric FETs.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"66 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486437","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ta-Shun Chou, Thi Thuy Vi Tran, Hartwin Peelaers, Kornelius Tetzner, Oliver Hilt, Jana Rehm, Saud Bin Anooz, Andreas Fiedler, Zbigniew Galazka, Martin Albrecht, Andreas Popp
In this work, the out-diffusion and uphill-diffusion of Mg inside (100) β-Ga2O3 epilayers and substrates are reported. The Mg accumulates toward the (100) surface upon annealing under an oxidizing environment, whereas the concentration profile changes with annealing temperatures and durations. Furthermore, the out-diffusion of Mg from the substrate into the epilayer is observed at temperatures above 800 °C, which continues during the film growth. The substitutional-interstitial-diffusion (SID) mechanism is suggested to be the driving mechanism for the former, and the latter is related to the diffusion of mobile Mg interstitials. The accumulation profile of Mg can be used to identify the interface between the epilayer and the substrate. Furthermore, significant differences in device performance are observed for power transistors fabricated on annealed and non-annealed epitaxial β-Ga2O3 wafers. Increased breakdown voltages of annealed samples are attributed to the Mg diffusion into the first few nanometers of the epitaxial layer close to the interface to the semi-insulating substrate, leading to compensation of residual dopants (donors) in that region.
这项研究报告了镁在（100）β-Ga2O3 外延层和衬底内的外扩散和上坡扩散。在氧化环境下退火时，镁向(100)表面聚集，而浓度分布则随退火温度和持续时间的变化而变化。此外，在温度高于 800 °C 时，镁会从基底向外扩散到外延层，这种现象在薄膜生长过程中一直持续。替代-间隙-扩散（SID）机制被认为是前者的驱动机制，而后者则与移动镁间隙的扩散有关。镁的累积曲线可用于识别外延层与基底之间的界面。此外，在退火和未退火的外延β-Ga2O3 晶圆上制造的功率晶体管在器件性能上也存在显著差异。退火样品击穿电压升高的原因是镁扩散到了外延层靠近半绝缘衬底界面的前几纳米处，从而补偿了该区域的残留掺杂剂（供体）。
{"title":"Out-Diffusion and Uphill-Diffusion of Mg in Czochralski-Grown (100) β-Ga2O3 Under High-Temperature Annealing and Its Influence on Lateral MOSFET Devices","authors":"Ta-Shun Chou, Thi Thuy Vi Tran, Hartwin Peelaers, Kornelius Tetzner, Oliver Hilt, Jana Rehm, Saud Bin Anooz, Andreas Fiedler, Zbigniew Galazka, Martin Albrecht, Andreas Popp","doi":"10.1002/aelm.202400342","DOIUrl":"https://doi.org/10.1002/aelm.202400342","url":null,"abstract":"In this work, the out-diffusion and uphill-diffusion of Mg inside (100) β-Ga<sub>2</sub>O<sub>3</sub> epilayers and substrates are reported. The Mg accumulates toward the (100) surface upon annealing under an oxidizing environment, whereas the concentration profile changes with annealing temperatures and durations. Furthermore, the out-diffusion of Mg from the substrate into the epilayer is observed at temperatures above 800 °C, which continues during the film growth. The substitutional-interstitial-diffusion (SID) mechanism is suggested to be the driving mechanism for the former, and the latter is related to the diffusion of mobile Mg interstitials. The accumulation profile of Mg can be used to identify the interface between the epilayer and the substrate. Furthermore, significant differences in device performance are observed for power transistors fabricated on annealed and non-annealed epitaxial β-Ga<sub>2</sub>O<sub>3</sub> wafers. Increased breakdown voltages of annealed samples are attributed to the Mg diffusion into the first few nanometers of the epitaxial layer close to the interface to the semi-insulating substrate, leading to compensation of residual dopants (donors) in that region.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"37 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486405","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wei Wang, Xiangxiang Gao, Zhenhua Lin, Haoyu Bai, Dongsheng Cui, Jie Su, Jincheng Zhang, Yue Hao, Jingjing Chang
Hardware integration with biological synaptic function is the key to realizing brain-like computing. Resistive Random Access Memory (RRAM), with a similar structure to biological synapses, are important candidate for the simulation of biological synaptic function. In this work, Ga2O3 film as a functional layer of RRAM is prepared by the solution method, and an RRAM-based photo-synaptic device with an Ag/Ga2O3/Si structure is constructed subsequently. The device exhibits excellent bipolar resistive switching characteristics, with the merits of a large storage window and long retention time. Furthermore, the devices generated excitatory postsynaptic currents (EPSC) and paired-pulse facilitation (PPF) behaviors under light pulse stimulation, enabling the simulation of synaptic plasticity. The transformation of synaptic behavior from short-term memory (STM) to long-term memory (LTM) is achieved by observing the spike-duration dependent plasticity (SDDP), spike-intensity dependent plasticity (SIDP), spike-number dependent plasticity (SNDP) and spike-rate dependent plasticity (SRDP) characteristics of photonic synapses under different conditions. The device also simulates the process of successive “learning-forgotten-remembering”, revealing that RRAM-based photonic synapses have great potential in the fields of artificial visual perception and memory storage.
{"title":"Photo-synaptic Memristor Devices from Solution-processed Ga2O3 Thin Films","authors":"Wei Wang, Xiangxiang Gao, Zhenhua Lin, Haoyu Bai, Dongsheng Cui, Jie Su, Jincheng Zhang, Yue Hao, Jingjing Chang","doi":"10.1002/aelm.202400512","DOIUrl":"https://doi.org/10.1002/aelm.202400512","url":null,"abstract":"Hardware integration with biological synaptic function is the key to realizing brain-like computing. Resistive Random Access Memory (RRAM), with a similar structure to biological synapses, are important candidate for the simulation of biological synaptic function. In this work, Ga<sub>2</sub>O<sub>3</sub> film as a functional layer of RRAM is prepared by the solution method, and an RRAM-based photo-synaptic device with an Ag/Ga<sub>2</sub>O<sub>3</sub>/Si structure is constructed subsequently. The device exhibits excellent bipolar resistive switching characteristics, with the merits of a large storage window and long retention time. Furthermore, the devices generated excitatory postsynaptic currents (EPSC) and paired-pulse facilitation (PPF) behaviors under light pulse stimulation, enabling the simulation of synaptic plasticity. The transformation of synaptic behavior from short-term memory (STM) to long-term memory (LTM) is achieved by observing the spike-duration dependent plasticity (SDDP), spike-intensity dependent plasticity (SIDP), spike-number dependent plasticity (SNDP) and spike-rate dependent plasticity (SRDP) characteristics of photonic synapses under different conditions. The device also simulates the process of successive “learning-forgotten-remembering”, revealing that RRAM-based photonic synapses have great potential in the fields of artificial visual perception and memory storage.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"21 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lorenzo Magnarin, Ben Breitung, Jasmin Aghassi-Hagmann
In this concise review, the recent advancements in fully inkjet-printed (IJP) indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) over the past years are discussed. IGZO has replaced hydrogenated amorphous silicon (a-Si:H) as the primary channel material for liquid-crystal display TFTs and has gained further attention due to the solution processability of IGZO inks. Despite the longstanding practice of printing IGZO for approximately fifteen years, the realization of fully inkjet-printed devices, including both dielectric and electrode components, represents a recent milestone in research, potentially heralding a cost-effective era for IGZO transistors. In this review, following an introductory exposition of IGZO, the focus is on the different ink formulations, currently deployed for solution-processed IGZO devices, the intricacies of the printing procedure involved are delineated, and ongoing research endeavors pertaining to the printing of dielectrics and electrodes for such devices are expounded upon.
{"title":"A Comprehensive Guide to Fully Inkjet-Printed IGZO Transistors","authors":"Lorenzo Magnarin, Ben Breitung, Jasmin Aghassi-Hagmann","doi":"10.1002/aelm.202400478","DOIUrl":"https://doi.org/10.1002/aelm.202400478","url":null,"abstract":"In this concise review, the recent advancements in fully inkjet-printed (IJP) indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) over the past years are discussed. IGZO has replaced hydrogenated amorphous silicon (a-Si:H) as the primary channel material for liquid-crystal display TFTs and has gained further attention due to the solution processability of IGZO inks. Despite the longstanding practice of printing IGZO for approximately fifteen years, the realization of fully inkjet-printed devices, including both dielectric and electrode components, represents a recent milestone in research, potentially heralding a cost-effective era for IGZO transistors. In this review, following an introductory exposition of IGZO, the focus is on the different ink formulations, currently deployed for solution-processed IGZO devices, the intricacies of the printing procedure involved are delineated, and ongoing research endeavors pertaining to the printing of dielectrics and electrodes for such devices are expounded upon.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"18 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142486438","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The demand for multinarrowband absorber has attracted increasing interest among researchers in recent years. However, integrating multifrequency absorption, tunability, and high optical transparency into an absorber remains a crucial challenge. In this study, a multiband, tunable, and transparent microwave meta-absorber is theoretically proposed and experimentally demonstrated. This meta-absorber is composed of resonant patterns made from graphene and indium tin oxide (ITO), placed on a substrate of lithium niobate (LN). By introducing P-type doping to reduce the resistance of monolayer graphene to around 300 Ω, the impedance matching of the absorber is promoted, consequently manifesting ten absorption points within 40 GHz. The electric field distribution analysis and an equivalent circuit model are employed to elucidate the physical mechanisms of the multiband absorber. Additionally, the lithium niobate dielectric layer possesses a substantial dielectric constant and exhibits phase transition characteristics with temperature changes. When the temperature increases to 250 °C, a comprehensive tuning range of more than 5.49 GHz within 40 GHz range is realized. The maximum tuning range for a single frequency point is 1.33 GHz. With the broadening of the band, the meta-absorber can provide multiple tunable ranges, making it more favorable for practical applications in optical modulator and sensor.
{"title":"A Tunable Transparent Graphene Absorber with Multifrequency Resonance","authors":"Chen Chen, Guang Cui, Jiawei Yang, Feng Zhang, Huihui Wang, Baolu Guan","doi":"10.1002/aelm.202400372","DOIUrl":"https://doi.org/10.1002/aelm.202400372","url":null,"abstract":"The demand for multinarrowband absorber has attracted increasing interest among researchers in recent years. However, integrating multifrequency absorption, tunability, and high optical transparency into an absorber remains a crucial challenge. In this study, a multiband, tunable, and transparent microwave meta-absorber is theoretically proposed and experimentally demonstrated. This meta-absorber is composed of resonant patterns made from graphene and indium tin oxide (ITO), placed on a substrate of lithium niobate (LN). By introducing P-type doping to reduce the resistance of monolayer graphene to around 300 Ω, the impedance matching of the absorber is promoted, consequently manifesting ten absorption points within 40 GHz. The electric field distribution analysis and an equivalent circuit model are employed to elucidate the physical mechanisms of the multiband absorber. Additionally, the lithium niobate dielectric layer possesses a substantial dielectric constant and exhibits phase transition characteristics with temperature changes. When the temperature increases to 250 °C, a comprehensive tuning range of more than 5.49 GHz within 40 GHz range is realized. The maximum tuning range for a single frequency point is 1.33 GHz. With the broadening of the band, the meta-absorber can provide multiple tunable ranges, making it more favorable for practical applications in optical modulator and sensor.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142448640","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ji-Hun Park, Jae-Hyeon Cho, Nyun Jong Lee, Hyun-Jae Lee, Ju-Hyeon Lee, Geon-Ju Lee, Frederick P. Marlton, Motohiro Suzuki, Manuel Hinterstein, Yoon Seok Oh, Ji-Won Choi, Geon-Tae Hwang, Jun Hee Lee, Sanghoon Kim, Kee Hoon Kim, Wook Jo
Albeit having great potential toward unprecedented type of applications such as magnetoelectric (ME) sensors and memories, practically useful single-phase multiferroics that show large coupling between ferromagnetism and ferroelectricity at ambient temperatures are still lacking. Here, the discovery of a new type of perovskite ferroelectrics (Pb,M)(Fe1/2Nb1/2)O3 (M = Fe, Co, Ni) is reported with a magnetically-active metal ion introduced into a cuboctahedrally-coordinated Pb position, which exhibits enhanced ME coupling owing to the development of simultaneous soft-ferromagnetism and lone-pair ferroelectricity persistent above room temperature. These Pb-site engineered (Pb,M)(Fe1/2Nb1/2)O3 perovskites exhibit a ME coupling coefficient of ≈40–60 ps m−1, a saturated electric polarization of 14–17 µC cm−2 and a saturation magnetization of 0.15–0.3 µB f.u−1. X-ray absorption spectroscopy combined with first-principles calculations demonstrates that the induced ferromagnetism originates from the ferromagnetic superexchange interaction coming from ≈90° bonding between the magnetic ions at the Pb site. The present discovery of the enhanced ME coupling in the Pb-site engineered perovskite ferroelectrics may provide unforeseen opportunities for applying conventional displacive ferroelectricity in the field of spintronics where ferromagnetism is essentially required.
{"title":"Enhanced Coupling Between Soft Ferromagnetism and Displacive Ferroelectricity in the Pb-Site Modified PbFe1/2Nb1/2O3","authors":"Ji-Hun Park, Jae-Hyeon Cho, Nyun Jong Lee, Hyun-Jae Lee, Ju-Hyeon Lee, Geon-Ju Lee, Frederick P. Marlton, Motohiro Suzuki, Manuel Hinterstein, Yoon Seok Oh, Ji-Won Choi, Geon-Tae Hwang, Jun Hee Lee, Sanghoon Kim, Kee Hoon Kim, Wook Jo","doi":"10.1002/aelm.202400370","DOIUrl":"https://doi.org/10.1002/aelm.202400370","url":null,"abstract":"Albeit having great potential toward unprecedented type of applications such as magnetoelectric (ME) sensors and memories, practically useful single-phase multiferroics that show large coupling between ferromagnetism and ferroelectricity at ambient temperatures are still lacking. Here, the discovery of a new type of perovskite ferroelectrics (Pb,M)(Fe<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub> (M = Fe, Co, Ni) is reported with a magnetically-active metal ion introduced into a cuboctahedrally-coordinated Pb position, which exhibits enhanced ME coupling owing to the development of simultaneous soft-ferromagnetism and lone-pair ferroelectricity persistent above room temperature. These Pb-site engineered (Pb,M)(Fe<sub>1/2</sub>Nb<sub>1/2</sub>)O<sub>3</sub> perovskites exhibit a ME coupling coefficient of ≈40–60 ps m<sup>−1</sup>, a saturated electric polarization of 14–17 <i>µ</i>C cm<sup>−2</sup> and a saturation magnetization of 0.15–0.3 <i><span style=\"text-decoration:underline\">µ</span></i><sub>B</sub> f.u<sup>−1</sup>. X-ray absorption spectroscopy combined with first-principles calculations demonstrates that the induced ferromagnetism originates from the ferromagnetic superexchange interaction coming from ≈90° bonding between the magnetic ions at the Pb site. The present discovery of the enhanced ME coupling in the Pb-site engineered perovskite ferroelectrics may provide unforeseen opportunities for applying conventional displacive ferroelectricity in the field of spintronics where ferromagnetism is essentially required.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"43 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2024-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142444361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：