Soo Min Yoo, Seungwoo Lee, Chaeyeong Hwang, Woojin Jeon
In this study, the molybdenum dioxide (MoO2) as a promising electrode material for next-generation semiconductor memory devices is investigated. A pre-reduction agent is introduced into the MoO2 atomic layer deposition (ALD) process to prevent surface morphology degradation occurring during crystallization. The chemical changes in MoO2 thin films upon the application of the pre-reduction agent are analyzed, thereby elucidating the role of the pre-reduction agent in MoO2 ALD. With the use of the pre-reduction agent, the Mo6+ corresponding to molybdenum trioxide (MoO3) decreased, while that of Mo5+ corresponding to MoOx (2 < x < 3) increases in the as-deposited state. Accordingly, the MoOx thin film is partially reduced in the as-deposited state, suppressing surface morphology degradation during the annealing process. The improved surface morphology of MoO2, MoO2/TiO2 thin film, enhances the electrical performance of MoO2/TiO2-based metal-insulator-metal (MIM) capacitors. The insights into the role and mechanism of the pre-reduction agent contribute to the development of optimized MoO2/TiO2-based MIM capacitors, providing significant progress toward addressing the challenges and enhancing the performance of next-generation semiconductor memory devices.
本文研究了二氧化钼（MoO2）作为下一代半导体存储器件极材料的应用前景。在MoO2原子层沉积（ALD）过程中引入预还原剂以防止结晶过程中表面形貌的退化。分析了预还原剂应用后MoO2薄膜的化学变化，从而阐明了预还原剂在MoO2 ALD中的作用。随着预还原剂的使用，在沉积态下，三氧化钼（MoO3）对应的Mo6+减少，而MoOx （2 < x < 3）对应的Mo5+增加。因此，MoOx薄膜在沉积状态下部分还原，抑制了退火过程中表面形貌的退化。MoO2/TiO2薄膜表面形貌的改善，提高了MoO2/TiO2基金属-绝缘体-金属（MIM）电容器的电性能。对预还原剂的作用和机制的深入了解有助于优化MoO2/ tio2基MIM电容器的开发，为解决下一代半导体存储器件的挑战和提高性能提供了重大进展。
{"title":"Improved Molybdenum Dioxide Atomic Layer Deposition Process by Introducing Pre-Reduction Agent","authors":"Soo Min Yoo, Seungwoo Lee, Chaeyeong Hwang, Woojin Jeon","doi":"10.1002/aelm.202500637","DOIUrl":"https://doi.org/10.1002/aelm.202500637","url":null,"abstract":"In this study, the molybdenum dioxide (MoO<sub>2</sub>) as a promising electrode material for next-generation semiconductor memory devices is investigated. A pre-reduction agent is introduced into the MoO<sub>2</sub> atomic layer deposition (ALD) process to prevent surface morphology degradation occurring during crystallization. The chemical changes in MoO<sub>2</sub> thin films upon the application of the pre-reduction agent are analyzed, thereby elucidating the role of the pre-reduction agent in MoO<sub>2</sub> ALD. With the use of the pre-reduction agent, the Mo<sup>6+</sup> corresponding to molybdenum trioxide (MoO<sub>3</sub>) decreased, while that of Mo<sup>5+</sup> corresponding to MoO<i><sub>x</sub></i> (2 < <i>x</i> < 3) increases in the as-deposited state. Accordingly, the MoO<i><sub>x</sub></i> thin film is partially reduced in the as-deposited state, suppressing surface morphology degradation during the annealing process. The improved surface morphology of MoO<sub>2</sub>, MoO<sub>2</sub>/TiO<sub>2</sub> thin film, enhances the electrical performance of MoO<sub>2</sub>/TiO<sub>2</sub>-based metal-insulator-metal (MIM) capacitors. The insights into the role and mechanism of the pre-reduction agent contribute to the development of optimized MoO<sub>2</sub>/TiO<sub>2</sub>-based MIM capacitors, providing significant progress toward addressing the challenges and enhancing the performance of next-generation semiconductor memory devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"200 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-03-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147360285","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ferroelectrics exhibit field-tunable non-volatile polarization, making them essential for modern electronic devices, including memories and sensors. Conventional ferroelectric transistors typically suffer from limited memory windows and poor fatigue resistance due to ionic defect migration during polarization switching. In contrast, sliding ferroelectrics utilize interlayer sliding as a polarization-switching mechanism, providing reduced switching barriers and enhanced fatigue endurance. Here, we demonstrate room-temperature sliding ferroelectricity in γ-InSe and develop a 2D sliding ferroelectric field-effect transistor that achieves a memory window of 6.8 V, conductance modulation exceeding 104, retention times beyond 10 years, and endurance surpassing 103 switching cycles. The device showed an ideality factor (α) as high as 0.97, approaching the theoretical limit. Furthermore, a ferroelectric tunnel junction constructed by an ultrathin (4.8 nm) γ-InSe layer exhibits reversible switching between high-resistance and low-resistance states, achieving a tunnelling electroresistance (TER) ratio of ∼105 at room temperature. The high-resistance state resistance decreases with temperature, while the TER ratio exceeds 106 at low temperatures, suggesting a thermally activated tunnelling mechanism alongside direct tunnelling under positive polarization. These findings highlight the potential of sliding ferroelectrics as robust candidates for next-generation rewritable, fatigue-resistant non-volatile memory technologies.
{"title":"Non-volatile Sliding Ferroelectric Memory Effect in Ultrathin γ-InSe","authors":"Yue Li, Luoyang Ding, Zhixiong Li, Feng Chen, Xiaoyao Weng, Min Zhu, Siyuan Wan, Yangbo Zhou","doi":"10.1002/aelm.70313","DOIUrl":"https://doi.org/10.1002/aelm.70313","url":null,"abstract":"Ferroelectrics exhibit field-tunable non-volatile polarization, making them essential for modern electronic devices, including memories and sensors. Conventional ferroelectric transistors typically suffer from limited memory windows and poor fatigue resistance due to ionic defect migration during polarization switching. In contrast, sliding ferroelectrics utilize interlayer sliding as a polarization-switching mechanism, providing reduced switching barriers and enhanced fatigue endurance. Here, we demonstrate room-temperature sliding ferroelectricity in γ-InSe and develop a 2D sliding ferroelectric field-effect transistor that achieves a memory window of 6.8 V, conductance modulation exceeding 10<sup>4</sup>, retention times beyond 10 years, and endurance surpassing 10<sup>3</sup> switching cycles. The device showed an ideality factor (α) as high as 0.97, approaching the theoretical limit. Furthermore, a ferroelectric tunnel junction constructed by an ultrathin (4.8 nm) γ-InSe layer exhibits reversible switching between high-resistance and low-resistance states, achieving a tunnelling electroresistance (TER) ratio of ∼10<sup>5</sup> at room temperature. The high-resistance state resistance decreases with temperature, while the TER ratio exceeds 10<sup>6</sup> at low temperatures, suggesting a thermally activated tunnelling mechanism alongside direct tunnelling under positive polarization. These findings highlight the potential of sliding ferroelectrics as robust candidates for next-generation rewritable, fatigue-resistant non-volatile memory technologies.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"13 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147278790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle
The topological properties of matter have reached nowadays a broad interest in the scientific and technological communities, mostly because those properties, initially exotic and hard to follow, have now demonstrated exploitability in everyday-life applications. In this light, beyond expanding our knowledge in the condensed matter physics field as well as revisiting some definitions of solid-state physics, the topological properties of materials might provide substantial benefits for challenges involving human society and environment. Here, we review the topological materials like topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals aiming at spotlighting the most recent advancements in fields like spintronics, electronics, photonics, thermoelectrics, and catalysis. Finally, we provide with an outlook on the recent class of topological materials like kagome, Lieb and moiré heterostructures which are expected to further expand the wealth of applications based on topological properties of matter.
{"title":"Topological Materials and Related Applications","authors":"Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle","doi":"10.1002/aelm.202500832","DOIUrl":"https://doi.org/10.1002/aelm.202500832","url":null,"abstract":"The topological properties of matter have reached nowadays a broad interest in the scientific and technological communities, mostly because those properties, initially exotic and hard to follow, have now demonstrated exploitability in everyday-life applications. In this light, beyond expanding our knowledge in the condensed matter physics field as well as revisiting some definitions of solid-state physics, the topological properties of materials might provide substantial benefits for challenges involving human society and environment. Here, we review the topological materials like topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals aiming at spotlighting the most recent advancements in fields like spintronics, electronics, photonics, thermoelectrics, and catalysis. Finally, we provide with an outlook on the recent class of topological materials like kagome, Lieb and moiré heterostructures which are expected to further expand the wealth of applications based on topological properties of matter.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"18 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146260826","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Katherine Stewart, Ellasia Tan, Jingwan Kim, Yun‐Hi Kim, Ji‐Seon Kim
Understanding polaron formation in conjugated polymers is critical for advancing solid‐state organic electronics. Here, we investigate diketopyrrolopyrrole (DPP)‐based polymers with tailored side chains to elucidate the impact of glycolation on charge transport and polaron formation. We demonstrate that glycol side chains enhance p‐type character and charge carrier density, while backbone elongation improves planarity and mobility. Electrochemical doping using a semicrystalline solid‐state ionic liquid (SSIL) can increase conductivity by four orders of magnitude. In situ field‐dependent Raman spectroscopy probes polaron formation, showing increased π‐electron redistribution in glycolated DPP. Polaron formation of the DPPT‐T conjugated backbone shows a more localised polaron with structural changes to the thiophene donor unit. Backbone elongation results in greater polaron delocalisation with lower reorganisation energy. Finally, ion‐gel gated organic synaptic transistors (IGOSTs) demonstrate significant performance gains for glycolated polymers with gDPPT‐T and gDPPT‐TVT exhibiting strong excitatory post‐synaptic currents. The more facile polaron formation pathway for gDPPT‐TVT offers a significant advantage in the dynamics of ion migration and retention. This work provides molecular‐level insight into the incorporation of glycol side chains to high‐performance conjugated polymers for solid‐state applications.
{"title":"Polarons in DPP Polymers – How Glycol Side Chains and Elongated Conjugated Backbone Influence the Formation and Transport","authors":"Katherine Stewart, Ellasia Tan, Jingwan Kim, Yun‐Hi Kim, Ji‐Seon Kim","doi":"10.1002/aelm.202500731","DOIUrl":"https://doi.org/10.1002/aelm.202500731","url":null,"abstract":"Understanding polaron formation in conjugated polymers is critical for advancing solid‐state organic electronics. Here, we investigate diketopyrrolopyrrole (DPP)‐based polymers with tailored side chains to elucidate the impact of glycolation on charge transport and polaron formation. We demonstrate that glycol side chains enhance p‐type character and charge carrier density, while backbone elongation improves planarity and mobility. Electrochemical doping using a semicrystalline solid‐state ionic liquid (SSIL) can increase conductivity by four orders of magnitude. In situ field‐dependent Raman spectroscopy probes polaron formation, showing increased π‐electron redistribution in glycolated DPP. Polaron formation of the DPPT‐T conjugated backbone shows a more localised polaron with structural changes to the thiophene donor unit. Backbone elongation results in greater polaron delocalisation with lower reorganisation energy. Finally, ion‐gel gated organic synaptic transistors (IGOSTs) demonstrate significant performance gains for glycolated polymers with gDPPT‐T and gDPPT‐TVT exhibiting strong excitatory post‐synaptic currents. The more facile polaron formation pathway for gDPPT‐TVT offers a significant advantage in the dynamics of ion migration and retention. This work provides molecular‐level insight into the incorporation of glycol side chains to high‐performance conjugated polymers for solid‐state applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"68 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146260830","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan
With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with the dual challenges of poor stability and further reduction in power consumption. Here, we fabricated Sm:HfO 2 thin film ferroelectric memristors, which combined the excellent ferroelectric and dielectric properties of hafnium‐based ferroelectric memristors, and the doping of Sm elements further improved their electrical characteristics. The device demonstrated stable switching characteristics, good hold, and durability for 10 8 cycles, as well as an ultra‐low power consumption of 23.82 fJ. Meanwhile, a full‐hardware image edge detection computing system is constructed by building a 3 × 3 memristor array with devices, and a grayscale image is used for hardware image edge detection calculation. The test result structural similarity index measure (SSIM) is 93.04%, and the software similarity reached 98.54%. This work has reduced power consumption and improved device stability by fabricating devices with hafnium‐based ferroelectric materials doped with Sm elements, providing a solution for high efficiency and high accuracy hafnium‐based ferroelectric brain‐like computing systems.
{"title":"Ultra‐Low Power Consumption and Highly Durability in Sm:HfO 2 Thin Film Ferroelectric Memristor for Edge Detection","authors":"Tengyu Li, YongRui Wang, Weifeng Zhang, Jikang Xu, Xiaobing Yan","doi":"10.1002/aelm.202500819","DOIUrl":"https://doi.org/10.1002/aelm.202500819","url":null,"abstract":"With the continuous development of computer image processing, developing efficient and low‐power computing devices has become a key challenge. Memristors have integrated in‐situ storage and computing capabilities, making them an ideal choice for low‐power image processing computing architectures. However, current memristors are confronted with the dual challenges of poor stability and further reduction in power consumption. Here, we fabricated Sm:HfO <jats:sub>2</jats:sub> thin film ferroelectric memristors, which combined the excellent ferroelectric and dielectric properties of hafnium‐based ferroelectric memristors, and the doping of Sm elements further improved their electrical characteristics. The device demonstrated stable switching characteristics, good hold, and durability for 10 <jats:sup>8</jats:sup> cycles, as well as an ultra‐low power consumption of 23.82 fJ. Meanwhile, a full‐hardware image edge detection computing system is constructed by building a 3 × 3 memristor array with devices, and a grayscale image is used for hardware image edge detection calculation. The test result structural similarity index measure (SSIM) is 93.04%, and the software similarity reached 98.54%. This work has reduced power consumption and improved device stability by fabricating devices with hafnium‐based ferroelectric materials doped with Sm elements, providing a solution for high efficiency and high accuracy hafnium‐based ferroelectric brain‐like computing systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"49 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146260828","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Douglas H. Vieira, Ana C. de Paula, José D. F. Dias, Maria H. L. O. Fung, Rafael Furlan de Oliveira, Gabriel L. Nogueira, Keli F. Seidel, José P. M. Serbena, Neri Alves
Developing transistors that combine high electrical performance, operational stability, and environmental sustainability remains a challenge. Electrolyte‐gated organic field‐effect transistors (EGOFETs) address this issue by replacing the insulating layer with sustainable electrolytes, enabling low‐voltage operation and biosensing capabilities. In this work, we demonstrate honey‐gated OFETs using natural honey as a sustainable electrolyte and dinaphtho[2,3‐b:2',3'‐f]thieno[3,2‐b]thiophene (DNTT) as the active layer. The devices exhibited an Ion/Ioff ≈ 10 3 , a transconductance of 10.42 µS, and a low threshold voltage of −0.74 V. Stability was assessed through short‐term tests (five days, 40 sweeps/day), revealing minimal parameter shifts, and long‐term tests (five weeks, 15 sweeps/week), showing gradual degradation. The device continued to operate with high performance after the honey droplet was removed and a fresh one was reapplied onto the DNTT. Under pulsed gate operation, the drain current switched by three orders of magnitude within 4 s, confirming fast, reversible gating and the absence of permanent channel doping or chemical reactions. The observed performance decline stems from structural disorder and trap formation induced by aging. Overall, DNTT honey‐gated OFETs exhibit stable operation for at least a short period before gradual degradation, highlighting their potential as a platform for sustainable electronics.
{"title":"Aging and Electrical Stability of DNTT Honey‐Gated OFETs","authors":"Douglas H. Vieira, Ana C. de Paula, José D. F. Dias, Maria H. L. O. Fung, Rafael Furlan de Oliveira, Gabriel L. Nogueira, Keli F. Seidel, José P. M. Serbena, Neri Alves","doi":"10.1002/aelm.202500786","DOIUrl":"https://doi.org/10.1002/aelm.202500786","url":null,"abstract":"Developing transistors that combine high electrical performance, operational stability, and environmental sustainability remains a challenge. Electrolyte‐gated organic field‐effect transistors (EGOFETs) address this issue by replacing the insulating layer with sustainable electrolytes, enabling low‐voltage operation and biosensing capabilities. In this work, we demonstrate honey‐gated OFETs using natural honey as a sustainable electrolyte and dinaphtho[2,3‐b:2',3'‐f]thieno[3,2‐b]thiophene (DNTT) as the active layer. The devices exhibited an <jats:italic>I</jats:italic> <jats:sub>on</jats:sub> <jats:italic>/I</jats:italic> <jats:sub>off</jats:sub> ≈ 10 <jats:sup>3</jats:sup> , a transconductance of 10.42 µS, and a low threshold voltage of −0.74 V. Stability was assessed through short‐term tests (five days, 40 sweeps/day), revealing minimal parameter shifts, and long‐term tests (five weeks, 15 sweeps/week), showing gradual degradation. The device continued to operate with high performance after the honey droplet was removed and a fresh one was reapplied onto the DNTT. Under pulsed gate operation, the drain current switched by three orders of magnitude within 4 s, confirming fast, reversible gating and the absence of permanent channel doping or chemical reactions. The observed performance decline stems from structural disorder and trap formation induced by aging. Overall, DNTT honey‐gated OFETs exhibit stable operation for at least a short period before gradual degradation, highlighting their potential as a platform for sustainable electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146215835","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Eugene A. Eliseev, Anna N. Morozovska, Sergei V. Kalinin, Long-Qing Chen, Venkatraman Gopalan
Proximity ferroelectricity is a novel paradigm for inducing ferroelectricity in a non-ferroelectric polar material, such as AlN or ZnO that are typically unswitchable with an external field below their dielectric breakdown field. When placed in direct contact with a thin switchable ferroelectric layer (such as Al1-xScxN or Zn1-xMgxO), they become a practically switchable ferroelectric. Using the thermodynamic Landau-Ginzburg-Devonshire theory, in this work, we perform the finite element modeling of the polarization switching in the compositionally graded AlN-Al1-xScxN, ZnO-Zn1-xMgxO, and MgO-Zn1-xMgxO structures sandwiched in both a parallel-plate capacitor geometry as well as in a sharp probe-planar electrode geometry. We reveal that the compositionally graded structure allows the simultaneous switching of spontaneous polarization in the whole system by a coercive field significantly lower than the electric breakdown field of unswitchable polar materials. The physical mechanism is the depolarization electric field determined by the gradient of chemical composition “x”. The field lowers the steepness of the switching barrier in the otherwise unswitchable parts of the compositionally graded AlN-Al1-xScxN and ZnO-Zn1-xMgxO structures. In the MgO-like regions of the compositionally graded MgO-Zn1-xMgxO structure, a shallow double-well free energy potential emerges. Proximity ferroelectric switching of the compositionally graded structures placed in the probe-electrode geometry occurs due to nanodomain formation under the tip. We predict that a gradient of chemical composition “x” significantly lowers effective coercive fields of the compositionally graded AlN-Al1-xScxN and ZnO-Zn1-xMgxO structures compared to the coercive fields of the corresponding multilayers with a uniform chemical composition in each layer. A tip-induced switching further lowers the coercive field, enabling control of ferroelectric domains in otherwise unswitchable compositionally graded structures, which can provide nanoscale domain control for memory, actuation, sensing, and optical applications.
{"title":"Proximity Ferroelectricity in Compositionally Graded Structures","authors":"Eugene A. Eliseev, Anna N. Morozovska, Sergei V. Kalinin, Long-Qing Chen, Venkatraman Gopalan","doi":"10.1002/aelm.202500661","DOIUrl":"https://doi.org/10.1002/aelm.202500661","url":null,"abstract":"Proximity ferroelectricity is a novel paradigm for inducing ferroelectricity in a non-ferroelectric polar material, such as AlN or ZnO that are typically unswitchable with an external field below their dielectric breakdown field. When placed in direct contact with a thin switchable ferroelectric layer (such as Al<sub>1-x</sub>Sc<sub>x</sub>N or Zn<sub>1-x</sub>Mg<sub>x</sub>O), they become a practically switchable ferroelectric. Using the thermodynamic Landau-Ginzburg-Devonshire theory, in this work, we perform the finite element modeling of the polarization switching in the compositionally graded AlN-Al<sub>1-x</sub>Sc<sub>x</sub>N, ZnO-Zn<sub>1-x</sub>Mg<sub>x</sub>O, and MgO-Zn<sub>1-x</sub>Mg<sub>x</sub>O structures sandwiched in both a parallel-plate capacitor geometry as well as in a sharp probe-planar electrode geometry. We reveal that the compositionally graded structure allows the simultaneous switching of spontaneous polarization in the whole system by a coercive field significantly lower than the electric breakdown field of unswitchable polar materials. The physical mechanism is the depolarization electric field determined by the gradient of chemical composition “x”. The field lowers the steepness of the switching barrier in the otherwise unswitchable parts of the compositionally graded AlN-Al<sub>1-x</sub>Sc<sub>x</sub>N and ZnO-Zn<sub>1-x</sub>Mg<sub>x</sub>O structures. In the MgO-like regions of the compositionally graded MgO-Zn<sub>1-x</sub>Mg<sub>x</sub>O structure, a shallow double-well free energy potential emerges. Proximity ferroelectric switching of the compositionally graded structures placed in the probe-electrode geometry occurs due to nanodomain formation under the tip. We predict that a gradient of chemical composition “x” significantly lowers effective coercive fields of the compositionally graded AlN-Al<sub>1-x</sub>Sc<sub>x</sub>N and ZnO-Zn<sub>1-x</sub>Mg<sub>x</sub>O structures compared to the coercive fields of the corresponding multilayers with a uniform chemical composition in each layer. A tip-induced switching further lowers the coercive field, enabling control of ferroelectric domains in otherwise unswitchable compositionally graded structures, which can provide nanoscale domain control for memory, actuation, sensing, and optical applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146260827","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mohadeseh Tabeshfar, Sivagnana Sundaram Anandakrishnan, Yang Bai
EU laws restrict the use of hazardous elements in electrical and electronic equipment and encourage their recycling. However, lead is currently exempted from this restriction due to its indispensable role in essential piezoelectric materials. Here, we tackle this problem by demonstrating the feasibility of recycling lead‐containing piezoelectric ceramics and giving them a second life, so that disposal of lead into the environment can be avoided or postponed. By exploring the use of a high‐permittivity polymer binder in this work, we are able to achieve optimum piezoelectric properties among all known recycled materials by consuming only negligible energy compared to that needed for producing new materials. We also provide insights into the roadmap for further developing the recycling method by mapping the correlations between decisive factors. After recycling, this work achieved 40% and 100% retention of piezoelectric charge and voltage coefficient values, respectively, compared to the pristine products prior to recycling, indicating superior properties of the recycled materials that can be given a second life in sensing and actuating components.
{"title":"Recycled Piezoelectric Materials with Competitive Second‐Life Functional Properties","authors":"Mohadeseh Tabeshfar, Sivagnana Sundaram Anandakrishnan, Yang Bai","doi":"10.1002/aelm.202500726","DOIUrl":"https://doi.org/10.1002/aelm.202500726","url":null,"abstract":"EU laws restrict the use of hazardous elements in electrical and electronic equipment and encourage their recycling. However, lead is currently exempted from this restriction due to its indispensable role in essential piezoelectric materials. Here, we tackle this problem by demonstrating the feasibility of recycling lead‐containing piezoelectric ceramics and giving them a second life, so that disposal of lead into the environment can be avoided or postponed. By exploring the use of a high‐permittivity polymer binder in this work, we are able to achieve optimum piezoelectric properties among all known recycled materials by consuming only negligible energy compared to that needed for producing new materials. We also provide insights into the roadmap for further developing the recycling method by mapping the correlations between decisive factors. After recycling, this work achieved 40% and 100% retention of piezoelectric charge and voltage coefficient values, respectively, compared to the pristine products prior to recycling, indicating superior properties of the recycled materials that can be given a second life in sensing and actuating components.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"96 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146215833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Andrea Sessa, Sebastiano De Stefano, Ofelia Durante, Aniello Pelella, Martino Aldrigo, Catalin Parvulescu, Adrian Dinescu, Chia‐Nung Kuo, Chin Shan Lue, Tsotne Dadiani, Gianluca D'Olimpio, Enver Faella, Antonio Politano, Maurizio Passacantando, Antonio Di Bartolomeo
2D semiconductors are attracting considerable interest for neuromorphic electronics for their strong light–matter interaction, defect‐mediated charge dynamics, and suitability for energy‐efficient devices. Among them, tin diselenide (SnSe 2 ) combines Earth abundance, environmental stability, high carrier mobility and persistent photoconductivity that make it a compelling candidate for multifunctional optoelectronic synapses. Here, we investigate multilayer SnSe 2 field‐effect transistors and demonstrate gate‐tunable optoelectronic plasticity. Systematic measurements as a function of temperature, illumination power, and gate bias reveal that the device photoresponse is dominated by trap‐assisted photogating. The interplay between fast and slow recombination channels produces a persistent photocurrent (PPC) that can be finely tuned by the gate voltage. Negative gate bias enhances charge separation and prolongs PPC, enabling long‐term potentiation, while positive gate bias accelerates recombination and suppresses persistence, yielding short‐term memory. Furthermore, short gate voltage pulses enable reversible suppression of persistent photocurrent, allowing controlled switching between short‐ and long‐term memory states. Under repetitive optical stimulation, the devices exhibit cumulative learning and memory retention with high reproducibility. These results highlight SnSe 2 as a robust platform for optoelectronic neuromorphic devices. By exploiting interfacial trap states and gate control, SnSe 2 ‐based transistors emulate essential synaptic functionalities with excellent stability, offering new opportunities for 2D‐material‐enabled scalable neuromorphic hardware.
{"title":"Synaptic Behavior in SnSe 2 Field‐Effect Transistors Induced by Surface Oxide and Trap Dynamics","authors":"Andrea Sessa, Sebastiano De Stefano, Ofelia Durante, Aniello Pelella, Martino Aldrigo, Catalin Parvulescu, Adrian Dinescu, Chia‐Nung Kuo, Chin Shan Lue, Tsotne Dadiani, Gianluca D'Olimpio, Enver Faella, Antonio Politano, Maurizio Passacantando, Antonio Di Bartolomeo","doi":"10.1002/aelm.202500734","DOIUrl":"https://doi.org/10.1002/aelm.202500734","url":null,"abstract":"2D semiconductors are attracting considerable interest for neuromorphic electronics for their strong light–matter interaction, defect‐mediated charge dynamics, and suitability for energy‐efficient devices. Among them, tin diselenide (SnSe <jats:sub>2</jats:sub> ) combines Earth abundance, environmental stability, high carrier mobility and persistent photoconductivity that make it a compelling candidate for multifunctional optoelectronic synapses. Here, we investigate multilayer SnSe <jats:sub>2</jats:sub> field‐effect transistors and demonstrate gate‐tunable optoelectronic plasticity. Systematic measurements as a function of temperature, illumination power, and gate bias reveal that the device photoresponse is dominated by trap‐assisted photogating. The interplay between fast and slow recombination channels produces a persistent photocurrent (PPC) that can be finely tuned by the gate voltage. Negative gate bias enhances charge separation and prolongs PPC, enabling long‐term potentiation, while positive gate bias accelerates recombination and suppresses persistence, yielding short‐term memory. Furthermore, short gate voltage pulses enable reversible suppression of persistent photocurrent, allowing controlled switching between short‐ and long‐term memory states. Under repetitive optical stimulation, the devices exhibit cumulative learning and memory retention with high reproducibility. These results highlight SnSe <jats:sub>2</jats:sub> as a robust platform for optoelectronic neuromorphic devices. By exploiting interfacial trap states and gate control, SnSe <jats:sub>2</jats:sub> ‐based transistors emulate essential synaptic functionalities with excellent stability, offering new opportunities for 2D‐material‐enabled scalable neuromorphic hardware.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"6 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146215834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jawid Nikan, Kaiwen Guo, Yungui Li, Paul W. M. Blom, Gert-Jan A. H. Wetzelaer
Organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) are an attractive alternative to phosphorescent OLEDs to harvest triplet excitons. However, a quantitative device model is still lacking. Here, we present an optoelectronic device model that fully predicts the performance of single-layer TADF OLEDs without any adjustable parameter. All input parameters have been independently obtained from charge-transport characterization, optical constants, and photoluminescence measurements. The electrical characteristics of the OLED are first simulated with a drift-diffusion solver, followed by the determination of the position- and voltage-dependent exciton densities based on kinetic rates determined from photoluminescence experiments, and finally combined with an optical-outcoupling model. The integrated optoelectronic model is validated with single-layer OLEDs based on the TADF emitter 9,10-bis(4-(9H-carbazol-9-yl)−2,6-dimethylphenyl)−9,10-diboraanthracene (CzDBA), quantitatively describing the external quantum efficiency and its roll-off for different layer thicknesses and temperatures.
{"title":"Integrated Optoelectronic Model to Predict the External Quantum Efficiency of Single-Layer TADF Organic Light-Emitting Diodes","authors":"Jawid Nikan, Kaiwen Guo, Yungui Li, Paul W. M. Blom, Gert-Jan A. H. Wetzelaer","doi":"10.1002/aelm.202500729","DOIUrl":"https://doi.org/10.1002/aelm.202500729","url":null,"abstract":"Organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) are an attractive alternative to phosphorescent OLEDs to harvest triplet excitons. However, a quantitative device model is still lacking. Here, we present an optoelectronic device model that fully predicts the performance of single-layer TADF OLEDs without any adjustable parameter. All input parameters have been independently obtained from charge-transport characterization, optical constants, and photoluminescence measurements. The electrical characteristics of the OLED are first simulated with a drift-diffusion solver, followed by the determination of the position- and voltage-dependent exciton densities based on kinetic rates determined from photoluminescence experiments, and finally combined with an optical-outcoupling model. The integrated optoelectronic model is validated with single-layer OLEDs based on the TADF emitter 9,10-bis(4-(9H-carbazol-9-yl)−2,6-dimethylphenyl)−9,10-diboraanthracene (CzDBA), quantitatively describing the external quantum efficiency and its roll-off for different layer thicknesses and temperatures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"226 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146260829","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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