Jean-Pierre Glauber, Marco Moors, Dmitry A. Ryndyk, Emad Najafidehaghani, Jonas Lorenz, Rahel-Manuela Maas, Nils Boysen, Harish Parala, Thomas Heine, Anjana Devi, Kirill Monakhov
2D Transition Metal Dichalcogenides
In their Research Article (10.1002/aelm.202500706), Thomas Heine, Anjana Devi, Kirill Monakhov, and co-workers show a lanthanide-phthalocyanine–augmented polyoxovanadate molecule interfacing with a MoS2 layer, with glowing streams representing interfacial charge transfer. This molecular–2D synergy tailors the optical and electronic properties of MoS2, enabling tunable emission and multilevel resistive-memory control, thereby accelerating progress toward molecularly gated ultrathin, low-power neuromorphic device architectures. Art by the team of INMYWORK Studio.
二维过渡金属二硫族化合物研究论文（10.1002/aelm）202500706), Thomas Heine, Anjana Devi， Kirill Monakhov和同事展示了一个镧系-酞菁-增强多钒氧酸盐分子与二硫化钼层的界面，发光流代表界面电荷转移。这种分子- 2d协同作用调整了MoS2的光学和电子特性，实现了可调发射和多电平电阻记忆控制，从而加速了分子门控超薄、低功耗神经形态器件架构的进展。由INMYWORK工作室团队制作。
{"title":"Tunable Electronic and Optoelectronic Properties of MoS2 Through Molecular Coverage-Controlled Polyoxometalate Doping (Adv. Electron. Mater. 4/2026)","authors":"Jean-Pierre Glauber, Marco Moors, Dmitry A. Ryndyk, Emad Najafidehaghani, Jonas Lorenz, Rahel-Manuela Maas, Nils Boysen, Harish Parala, Thomas Heine, Anjana Devi, Kirill Monakhov","doi":"10.1002/aelm.70295","DOIUrl":"10.1002/aelm.70295","url":null,"abstract":"<p><b>2D Transition Metal Dichalcogenides</b></p><p>In their Research Article (10.1002/aelm.202500706), Thomas Heine, Anjana Devi, Kirill Monakhov, and co-workers show a lanthanide-phthalocyanine–augmented polyoxovanadate molecule interfacing with a MoS<sub>2</sub> layer, with glowing streams representing interfacial charge transfer. This molecular–2D synergy tailors the optical and electronic properties of MoS<sub>2</sub>, enabling tunable emission and multilevel resistive-memory control, thereby accelerating progress toward molecularly gated ultrathin, low-power neuromorphic device architectures. Art by the team of INMYWORK Studio.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 4","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.70295","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146215837","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Luke McCarthy, Mohan V. Jacob, Mostafa Rahimi Azghadi
Organic Thin‐Film Transistors (OTFTs), including Organic Field‐Effect Transistors (OFETs) and Organic Electro‐Chemical Transistors (OECTs), offer clear advantages over traditional silicon‐based devices, particularly in power efficiency and biocompatibility. When combined with neuromorphic computing, which mimics the brain's event‐driven processing to improve computational efficiency, OTFTs become a powerful platform for next‐generation electronics. These devices have demonstrated strong potential as artificial synapses and neurons, showing key spike‐based performance metrics such as Excitatory Post‐Synaptic Current (EPSC), Paired‐Pulse Facilitation (PPF), and Long‐Term Potentiation (LTP). This review captures recent progress in OTFT‐based synaptic and neuronal devices, alongside an in‐depth analysis of how fabrication parameters influence neuromorphic performance. Such insights are critical for designing and optimizing organic neuromorphic systems. We examine the transition from single‐transistor synapses to multi‐transistor neuron models, including emerging organic Single Transistor Latch (STL) neurons that mimic Leaky Integrate and Fire (LIF) and related dynamics. This review also explores the development of OTFT‐based neural networks, their performance relative to Metal‐Oxide‐Semiconductor Field‐Effect Transistor (MOSFET)‐based systems, and their potential shift toward fully neuromorphic Spiking Neural Networks (SNNs). Beyond surveying device demonstrations, this review introduces a standardized characterization protocol for OTFT synapses, and maps the physical mechanisms of OTFT architectures onto appropriate learning rules and network models. By linking materials, device physics, and neuromorphic algorithms, we highlight the opportunities for co‐designing flexible, bio‐integrated OTFT‐based neuromorphic systems.
{"title":"Organic Thin‐Film Transistors for Neuromorphic Computing","authors":"Luke McCarthy, Mohan V. Jacob, Mostafa Rahimi Azghadi","doi":"10.1002/aelm.202500440","DOIUrl":"https://doi.org/10.1002/aelm.202500440","url":null,"abstract":"Organic Thin‐Film Transistors (OTFTs), including Organic Field‐Effect Transistors (OFETs) and Organic Electro‐Chemical Transistors (OECTs), offer clear advantages over traditional silicon‐based devices, particularly in power efficiency and biocompatibility. When combined with neuromorphic computing, which mimics the brain's event‐driven processing to improve computational efficiency, OTFTs become a powerful platform for next‐generation electronics. These devices have demonstrated strong potential as artificial synapses and neurons, showing key spike‐based performance metrics such as Excitatory Post‐Synaptic Current (EPSC), Paired‐Pulse Facilitation (PPF), and Long‐Term Potentiation (LTP). This review captures recent progress in OTFT‐based synaptic and neuronal devices, alongside an in‐depth analysis of how fabrication parameters influence neuromorphic performance. Such insights are critical for designing and optimizing organic neuromorphic systems. We examine the transition from single‐transistor synapses to multi‐transistor neuron models, including emerging organic Single Transistor Latch (STL) neurons that mimic Leaky Integrate and Fire (LIF) and related dynamics. This review also explores the development of OTFT‐based neural networks, their performance relative to Metal‐Oxide‐Semiconductor Field‐Effect Transistor (MOSFET)‐based systems, and their potential shift toward fully neuromorphic Spiking Neural Networks (SNNs). Beyond surveying device demonstrations, this review introduces a standardized characterization protocol for OTFT synapses, and maps the physical mechanisms of OTFT architectures onto appropriate learning rules and network models. By linking materials, device physics, and neuromorphic algorithms, we highlight the opportunities for co‐designing flexible, bio‐integrated OTFT‐based neuromorphic systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"88 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146215846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
As modern data‐driven technologies represented by artificial intelligence (AI) systems increasingly demand energy‐efficient, real‐time data processing, a new computing paradigm that transcends the energy and speed limits of conventional von Neumann architectures has been proposed to emulate brain‐inspired information processing. Neuromorphic computing offers a brain‐inspired alternative that integrates memory and computation within the same device platform enabling energy‐efficient, parallel computing operation. Among emerging device platforms, organic electrochemical transistors (OECTs) have attracted particular attention due to their distinct advantages such as mixed ionic‐electronic conduction, high transconductance, low‐voltage operation, and intrinsic biocompatibility. These features make OECTs potentially suited for artificial synaptic and neuronal devices capable of mimicking characteristic plastic and spiking behaviors of biological nerve. Herein, we provide a comprehensive overview of OECT‐based neuromorphic electronics, covering from fundamental device physics, fabrication techniques, materials, and architectural advances to their realization as artificial synapse and nerve. Furthermore, recent progress in higher‐level integration of those elements and advanced OECT platforms such as reconfigurable and multimodal devices which combine electrical, optical, and biochemical functionalities has been discussed. Finally, we outline the remaining challenges and future directions for achieving stable, practical OECT neuromorphic hardware toward next‐generation intelligent, low‐power, and biohybrid computing.
{"title":"The Rise of Organic Electrochemical Transistors for Brain‐Inspired Neuromorphic Computing","authors":"Heejin Kim, Hyunhak Jeong, Gunuk Wang","doi":"10.1002/aelm.202500733","DOIUrl":"https://doi.org/10.1002/aelm.202500733","url":null,"abstract":"As modern data‐driven technologies represented by artificial intelligence (AI) systems increasingly demand energy‐efficient, real‐time data processing, a new computing paradigm that transcends the energy and speed limits of conventional von Neumann architectures has been proposed to emulate brain‐inspired information processing. Neuromorphic computing offers a brain‐inspired alternative that integrates memory and computation within the same device platform enabling energy‐efficient, parallel computing operation. Among emerging device platforms, organic electrochemical transistors (OECTs) have attracted particular attention due to their distinct advantages such as mixed ionic‐electronic conduction, high transconductance, low‐voltage operation, and intrinsic biocompatibility. These features make OECTs potentially suited for artificial synaptic and neuronal devices capable of mimicking characteristic plastic and spiking behaviors of biological nerve. Herein, we provide a comprehensive overview of OECT‐based neuromorphic electronics, covering from fundamental device physics, fabrication techniques, materials, and architectural advances to their realization as artificial synapse and nerve. Furthermore, recent progress in higher‐level integration of those elements and advanced OECT platforms such as reconfigurable and multimodal devices which combine electrical, optical, and biochemical functionalities has been discussed. Finally, we outline the remaining challenges and future directions for achieving stable, practical OECT neuromorphic hardware toward next‐generation intelligent, low‐power, and biohybrid computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"66 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146215836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Valeriy A. Slipko, Alon Ascoli, Fernando Corinto, Yuriy V. Pershin
This study investigates the low‐power control of resistance switching transitions in memristive devices described through a single state variable. A unique yet general approach, enabling to derive the most energy‐efficient protocols for programming their resistances, is proposed. This low‐power control paradigm is applied to a couple of differential algebraic equation sets, capturing the nonlinear dynamics of voltage‐controlled devices. Depending upon intrinsic physical properties of a memristive device, captured in the model formulas and parameter setting, and upon constraints on programming time and operating voltages, the optimal protocol may require the application of either a single square voltage pulse of height set to a certain level within the admissible range across a certain fraction of the programming time or some more involved voltage stimulus of unique polarity, including trains of square voltage pulses of different heights, over the entire programming time. The practical implications of these research findings are significant, as the development of energy‐efficient protocols to program memristive devices is a subject under intensive and extensive studies across the academic community and industry.
{"title":"Low‐Power Control Of Resistance Switching Transitions in First‐Order Memristors","authors":"Valeriy A. Slipko, Alon Ascoli, Fernando Corinto, Yuriy V. Pershin","doi":"10.1002/aelm.202500720","DOIUrl":"https://doi.org/10.1002/aelm.202500720","url":null,"abstract":"This study investigates the low‐power control of resistance switching transitions in memristive devices described through a single state variable. A unique yet general approach, enabling to derive the most energy‐efficient protocols for programming their resistances, is proposed. This low‐power control paradigm is applied to a couple of differential algebraic equation sets, capturing the nonlinear dynamics of voltage‐controlled devices. Depending upon intrinsic physical properties of a memristive device, captured in the model formulas and parameter setting, and upon constraints on programming time and operating voltages, the optimal protocol may require the application of either a single square voltage pulse of height set to a certain level within the admissible range across a certain fraction of the programming time or some more involved voltage stimulus of unique polarity, including trains of square voltage pulses of different heights, over the entire programming time. The practical implications of these research findings are significant, as the development of energy‐efficient protocols to program memristive devices is a subject under intensive and extensive studies across the academic community and industry.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146198537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We systematically investigate the electronic structures of pristine monolayer WSe 2 and WSe 2 superlattices with periodic nitrogen substitution. Unlike random doping, which often introduces in‐gap impurity states, periodic nitrogen doping primarily modulates the bandgap, thereby facilitating effective bandgap engineering for electronic and optoelectronic applications. The gap narrows monotonically with increasing dopant density (pristine 8‐row 6‐row 4‐row), directly influencing device switching. We also evaluate the FET performance of nanojunctions created by these configurations by examining the contour plot of current density as a function of temperature and gate voltage, which quantifies how bandgap engineering affects switching characteristics. Our calculations clarify the classical‐quantum crossover in sub‐10 nm 2D FETs: as rises, approaches the thermionic current; as falls, quantum tunneling dominates, and the steep energy dependence of may break the classical limit of subthreshold swing imposed by the Boltzmann tyranny. The optimal gating range (, ) is investigated for each temperature, insensitive to temperature in the high‐temperature regime, confirming the good thermal stability of the FET devices. A comparison study demonstrates that the 4‐row structure, with excessively large , severely low ON/OFF ratio, and restricted operation range, is inappropriate for realistic FET applications. The pristine structure has the highest performance across all measures, but its high (1.1 V) makes it less practical, since such a large threshold voltage may promote time‐dependent dielectric breakdown (TDDB) of the oxide layer, reducing device dependability. The 6‐row and 8‐row structures are slightly inferior to the pristine in terms of performance, but exhibit more favorable values (0.75 V), achieving a balance between reasonable threshold voltage and stable operation range, making them more promising candidates for future FET integration.
{"title":"Bandgap Engineering of Nitrogen‐Doped Monolayer WSe 2 Superlattice and its Application to Field Effect Transistor","authors":"Yi‐Cheng Lo, Liao‐Jia Wang, Yu‐Chang Chen","doi":"10.1002/aelm.202500754","DOIUrl":"https://doi.org/10.1002/aelm.202500754","url":null,"abstract":"We systematically investigate the electronic structures of pristine monolayer WSe <jats:sub>2</jats:sub> and WSe <jats:sub>2</jats:sub> superlattices with periodic nitrogen substitution. Unlike random doping, which often introduces in‐gap impurity states, periodic nitrogen doping primarily modulates the bandgap, thereby facilitating effective bandgap engineering for electronic and optoelectronic applications. The gap narrows monotonically with increasing dopant density (pristine 8‐row 6‐row 4‐row), directly influencing device switching. We also evaluate the FET performance of nanojunctions created by these configurations by examining the contour plot of current density as a function of temperature and gate voltage, which quantifies how bandgap engineering affects switching characteristics. Our calculations clarify the classical‐quantum crossover in sub‐10 nm 2D FETs: as rises, approaches the thermionic current; as falls, quantum tunneling dominates, and the steep energy dependence of may break the classical limit of subthreshold swing imposed by the Boltzmann tyranny. The optimal gating range (, ) is investigated for each temperature, insensitive to temperature in the high‐temperature regime, confirming the good thermal stability of the FET devices. A comparison study demonstrates that the 4‐row structure, with excessively large , severely low ON/OFF ratio, and restricted operation range, is inappropriate for realistic FET applications. The pristine structure has the highest performance across all measures, but its high (1.1 V) makes it less practical, since such a large threshold voltage may promote time‐dependent dielectric breakdown (TDDB) of the oxide layer, reducing device dependability. The 6‐row and 8‐row structures are slightly inferior to the pristine in terms of performance, but exhibit more favorable values (0.75 V), achieving a balance between reasonable threshold voltage and stable operation range, making them more promising candidates for future FET integration.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"32 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146198535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig
State‐of‐the‐art memristors based on 2D transition metal dichalcogenide material as an active area formed by vertical or lateral structures are promising devices for emulating artificial synaptic behavior. They owe their switching ability to the defects of said active area. Such layers prepared by chemical vapor deposition are the most employed since they contain vacancies and grain boundaries. However, not much is said about the exfoliated active areas. In this work, we demonstrate vertical memristors based on exfoliated molybdenum disulfide, which reveals a gradual resistive switching mechanism based on Schottky barrier modulation. The devices operate without a forming step and show a gradual resistive switching behavior. The mechanism is attributed to charge trapping/detrapping, which modulates the Schottky barrier at the MoS 2 /metal interface. Furthermore, the device demonstrates key synaptic functions including potentiation, depression, and spike‐amplitude‐dependent plasticity, highlighting its potential as a synaptic building block for analog neuromorphic computing systems.
{"title":"Exfoliated‐MoS 2 Gradual Resistive Switching Devices as Artificial Synapses","authors":"Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig","doi":"10.1002/aelm.202500691","DOIUrl":"https://doi.org/10.1002/aelm.202500691","url":null,"abstract":"State‐of‐the‐art memristors based on 2D transition metal dichalcogenide material as an active area formed by vertical or lateral structures are promising devices for emulating artificial synaptic behavior. They owe their switching ability to the defects of said active area. Such layers prepared by chemical vapor deposition are the most employed since they contain vacancies and grain boundaries. However, not much is said about the exfoliated active areas. In this work, we demonstrate vertical memristors based on exfoliated molybdenum disulfide, which reveals a gradual resistive switching mechanism based on Schottky barrier modulation. The devices operate without a forming step and show a gradual resistive switching behavior. The mechanism is attributed to charge trapping/detrapping, which modulates the Schottky barrier at the MoS <jats:sub>2</jats:sub> /metal interface. Furthermore, the device demonstrates key synaptic functions including potentiation, depression, and spike‐amplitude‐dependent plasticity, highlighting its potential as a synaptic building block for analog neuromorphic computing systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146198536","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Physical reservoir computing (PRC) is a promising neuromorphic computing framework to significantly reduce the computational resources required for machine learning, although computational performance has plenty of room for improvement compared to simulation‐based machine learning models. In this study, we fabricated a spin wave interference‐based PRC device with ten terminals to systematically investigate the effect of the number of detectors, from one to eight detectors, on computational performance. The 10‐step‐ahead prediction task of chaotic time series data generated by the Mackey‐Glass equation was performed, and the eight‐detector device achieved a significantly improved computational performance with a root mean squared error (RMSE) of 1.63 × 10 −2 . This result represents top‐level performance among currently reported PRCs and demonstrates exceptionally high performance compared to simulation‐based machine learning models. Information processing capacity (IPC) analysis evidenced that the spin wave interference‐based PRC with eight detectors has outstanding linear capacity, which has a strong negative correlation with the RMSE of the chaotic time series prediction. This study confirmed in these systems that multi‐terminalization is an effective technique capable of significantly improving computational performance through the enhancement of high dimensionality.
{"title":"Enhanced High Dimensionality and the Information Processing Capacity in Interfered Spin Wave‐Based Reservoir Computing, Achieved With Eight Detectors","authors":"Sota Hikasa, Wataru Namiki, Daiki Nishioka, Maki Nishimura, Ryo Iguchi, Kazuya Terabe, Takashi Tsuchiya","doi":"10.1002/aelm.202500780","DOIUrl":"https://doi.org/10.1002/aelm.202500780","url":null,"abstract":"Physical reservoir computing (PRC) is a promising neuromorphic computing framework to significantly reduce the computational resources required for machine learning, although computational performance has plenty of room for improvement compared to simulation‐based machine learning models. In this study, we fabricated a spin wave interference‐based PRC device with ten terminals to systematically investigate the effect of the number of detectors, from one to eight detectors, on computational performance. The 10‐step‐ahead prediction task of chaotic time series data generated by the Mackey‐Glass equation was performed, and the eight‐detector device achieved a significantly improved computational performance with a root mean squared error (RMSE) of 1.63 × 10 <jats:sup>−</jats:sup> <jats:sup>2</jats:sup> . This result represents top‐level performance among currently reported PRCs and demonstrates exceptionally high performance compared to simulation‐based machine learning models. Information processing capacity (IPC) analysis evidenced that the spin wave interference‐based PRC with eight detectors has outstanding linear capacity, which has a strong negative correlation with the RMSE of the chaotic time series prediction. This study confirmed in these systems that multi‐terminalization is an effective technique capable of significantly improving computational performance through the enhancement of high dimensionality.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"110 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146198543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Transient negative capacitance observed during ferroelectric polarization switching is often interpreted as an intrinsic material property, yet our study shows it can arise as a circuit artifact. We systematically varied the configuration of the measurement circuit used in fast voltage‐pulse experiments to characterise the ferroelectric polarization switching of epitaxial high‐quality thin‐film capacitors. We conclude that even modest resistances, such as the 50 Ω source impedance of a standard pulse generator, serially connected with the ferroelectric capacitor, significantly produced the characteristic voltage “dip” associated with negative capacitance, reducing the effective electric field across the ferroelectric and altering the polarization switching dynamics. Because the applied field is no longer constant, most of the theoretical models, such as conventional Kolmogorov–Avrami–Ishibashi or Landau–Khalatnikov, used to describe the ferroelectric switching, become invalid in the interpretation of the polarization switching in classical PUND (Positive‐Up‐Negative‐Down) measurements. To reveal intrinsic switching dynamics, we implemented a low‐impedance buffer amplifier. This buffered circuit configuration maintained a nearly constant field, eliminating the transient negative‐capacitance artifact, and revealed faster, higher‐current switching. We establish quantitative criteria for circuit design and device geometry to ensure accurate analysis of ferroelectric switching dynamics.
在铁电极化开关过程中观察到的瞬态负电容通常被解释为一种固有的材料特性，然而我们的研究表明它可以作为电路伪影出现。我们系统地改变了用于快速电压脉冲实验的测量电路的配置，以表征外延高质量薄膜电容器的铁电极化开关。我们得出的结论是，即使是最小的电阻，如与铁电电容器串联的标准脉冲发生器的50 Ω源阻抗，也会显着产生与负电容相关的特征电压“dip”，从而降低铁电的有效电场并改变极化开关动力学。由于施加的场不再是恒定的，大多数用于描述铁电开关的理论模型，如传统的Kolmogorov-Avrami-Ishibashi或Landau-Khalatnikov，在解释经典PUND （Positive - Up - Negative - Down）测量中的极化开关时变得无效。为了揭示固有的开关动力学，我们实现了一个低阻抗缓冲放大器。这种缓冲电路结构保持了一个几乎恒定的场，消除了瞬态负电容伪影，并显示出更快、更高电流的开关。我们建立了电路设计和器件几何的定量标准，以确保铁电开关动力学的准确分析。
{"title":"Implications of Transient Negative Capacitance Effect in Ferroelectric Polarization Dynamics","authors":"Marin Alexe","doi":"10.1002/aelm.202500757","DOIUrl":"https://doi.org/10.1002/aelm.202500757","url":null,"abstract":"Transient negative capacitance observed during ferroelectric polarization switching is often interpreted as an intrinsic material property, yet our study shows it can arise as a circuit artifact. We systematically varied the configuration of the measurement circuit used in fast voltage‐pulse experiments to characterise the ferroelectric polarization switching of epitaxial high‐quality thin‐film capacitors. We conclude that even modest resistances, such as the 50 Ω source impedance of a standard pulse generator, serially connected with the ferroelectric capacitor, significantly produced the characteristic voltage “dip” associated with negative capacitance, reducing the effective electric field across the ferroelectric and altering the polarization switching dynamics. Because the applied field is no longer constant, most of the theoretical models, such as conventional Kolmogorov–Avrami–Ishibashi or Landau–Khalatnikov, used to describe the ferroelectric switching, become invalid in the interpretation of the polarization switching in classical PUND (Positive‐Up‐Negative‐Down) measurements. To reveal intrinsic switching dynamics, we implemented a low‐impedance buffer amplifier. This buffered circuit configuration maintained a nearly constant field, eliminating the transient negative‐capacitance artifact, and revealed faster, higher‐current switching. We establish quantitative criteria for circuit design and device geometry to ensure accurate analysis of ferroelectric switching dynamics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"119 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146198534","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Salvatore Gambino, Maria Montrone, Piotr Pander, Marco Pugliese, Agostina Lina Capodilupo, Mauro Leoncini, Antonio Maggiore, Umberto Berardi, Giuseppe Gigli, Antonio Cardone, Vincenzo Maiorano
[1]Benzothieno[3,2-b][1]benzothiophene (BTBT) and its tetraoxide derivative [1]benzothieno[3,2-b]benzothiophene-tetraoxide (BTBTOx4) are among the most interesting planar building blocks for constructing p-type and n-type transporting materials for organic optoelectronic devices. Herein, we report a study of six recently synthetized small molecules, namely PTz2-BTBT, PTz2-BTBTOx4, MPA2-BTBT, MPA2-BTBTOx4, POCz2-BTBT, and POCz2-BTBTOx4, designed as donor–acceptor–donor (D–A–D) structures. These compounds combine BTBT and BTBTOx4 as electron-accepting fused-ring cores with phenothiazine, bis(4-methoxyphenyl)amine, and 3,6-bis(4-(octyloxy)phenyl)-9H-carbazole as electron-donating end groups. The differences in electrochemistry, electronic molecular structures, and charge carrier mobilities of the six compounds are systematically studied. BTBTOX4-based compounds exhibit an ambipolar character and can serve as effective electron- and hole-transport materials for organic-based devices, showing also higher conductivity compared to the BTBT counterpart. On the contrary, the BTBT-based compounds show mainly a hole transport behavior but higher mobility.
{"title":"Revealing Ambipolar Charge Transport in BTBT-Based D–A–D Molecules via Photo-MIS-CELIV Measurements","authors":"Salvatore Gambino, Maria Montrone, Piotr Pander, Marco Pugliese, Agostina Lina Capodilupo, Mauro Leoncini, Antonio Maggiore, Umberto Berardi, Giuseppe Gigli, Antonio Cardone, Vincenzo Maiorano","doi":"10.1002/aelm.202500541","DOIUrl":"10.1002/aelm.202500541","url":null,"abstract":"<p>[1]Benzothieno[3,2-b][1]benzothiophene (BTBT) and its tetraoxide derivative [1]benzothieno[3,2-b]benzothiophene-tetraoxide (BTBTOx<sub>4</sub>) are among the most interesting planar building blocks for constructing p-type and n-type transporting materials for organic optoelectronic devices. Herein, we report a study of six recently synthetized small molecules, namely <b>PTz<sub>2</sub>-BTBT</b>, <b>PTz<sub>2</sub>-BTBTOx<sub>4</sub></b>, <b>MPA<sub>2</sub>-BTBT</b>, <b>MPA<sub>2</sub>-BTBTOx<sub>4</sub></b>, <b>POCz<sub>2</sub>-BTBT</b>, and <b>POCz<sub>2</sub>-BTBTOx<sub>4</sub></b>, designed as donor–acceptor–donor (D–A–D) structures. These compounds combine BTBT and BTBTOx<sub>4</sub> as electron-accepting fused-ring cores with phenothiazine, bis(4-methoxyphenyl)amine, and 3,6-bis(4-(octyloxy)phenyl)-9H-carbazole as electron-donating end groups. The differences in electrochemistry, electronic molecular structures, and charge carrier mobilities of the six compounds are systematically studied. BTBTOX<sub>4</sub>-based compounds exhibit an ambipolar character and can serve as effective electron- and hole-transport materials for organic-based devices, showing also higher conductivity compared to the BTBT counterpart. On the contrary, the BTBT-based compounds show mainly a hole transport behavior but higher mobility.</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 4","pages":""},"PeriodicalIF":5.3,"publicationDate":"2026-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://advanced.onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202500541","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146169635","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mingyu Xu, Matt Boswell, Aya Rutherford, Cheng Peng, Ying Zhou, Shuyang Wang, Zhaorong Yang, Antonio M. dos Santos, Haidong Zhou, Weiwei Xie
Electronic states under pressure exhibit unconventional spin and charge dynamics that provide a powerful route to uncover exotic phases in quantum materials. Here, we present the structural, magnetic, and electronic evolution of YbMn 2 Sb 2 under pressure. Single‐crystal X‐ray diffraction reveals a pressure‐induced structural transition from the space group trigonal Pm 1 to the monoclinic P 2 1 / m phase near 3.5 GPa, which remains stable up to 10 GPa. Magnetization measurements display an anomalously weak net magnetic moment and the absence of Curie–Weiss behavior up to 400 K, suggesting the formation of short‐range Mn moment pairs that cancel macroscopically and subsequently evolve into long‐range order upon cooling. Temperature‐dependent resistivity shows semiconducting behavior with a transition at ∼119 K at ambient pressure, while pressure induces a dramatic suppression of resistance and the emergence of metallic‐like temperature dependence, stabilized beyond 5 GPa. This pressure‐driven semiconductor‐metal transition is consistent with our density functional theory calculations, confirming the closing of the band gap under compression. Neutron diffraction under pressure identifies an incommensurate magnetic structure with antiparallel correlations between paired spins. Together, these results demonstrate how pressure‐driven structural tuning and competing exchange interactions stabilize unconventional magnetic states in this low‐dimensional magnetic semiconductor.
{"title":"Pressure‐Induced Structural and Magnetic Evolution in Layered Antiferromagnet YbMn 2 Sb 2","authors":"Mingyu Xu, Matt Boswell, Aya Rutherford, Cheng Peng, Ying Zhou, Shuyang Wang, Zhaorong Yang, Antonio M. dos Santos, Haidong Zhou, Weiwei Xie","doi":"10.1002/aelm.202500820","DOIUrl":"https://doi.org/10.1002/aelm.202500820","url":null,"abstract":"Electronic states under pressure exhibit unconventional spin and charge dynamics that provide a powerful route to uncover exotic phases in quantum materials. Here, we present the structural, magnetic, and electronic evolution of YbMn <jats:sub>2</jats:sub> Sb <jats:sub>2</jats:sub> under pressure. Single‐crystal X‐ray diffraction reveals a pressure‐induced structural transition from the space group trigonal <jats:italic>P</jats:italic> <jats:italic>m</jats:italic> 1 to the monoclinic <jats:italic>P</jats:italic> 2 <jats:sub>1</jats:sub> / <jats:italic>m</jats:italic> phase near 3.5 GPa, which remains stable up to 10 GPa. Magnetization measurements display an anomalously weak net magnetic moment and the absence of Curie–Weiss behavior up to 400 K, suggesting the formation of short‐range Mn moment pairs that cancel macroscopically and subsequently evolve into long‐range order upon cooling. Temperature‐dependent resistivity shows semiconducting behavior with a transition at ∼119 K at ambient pressure, while pressure induces a dramatic suppression of resistance and the emergence of metallic‐like temperature dependence, stabilized beyond 5 GPa. This pressure‐driven semiconductor‐metal transition is consistent with our density functional theory calculations, confirming the closing of the band gap under compression. Neutron diffraction under pressure identifies an incommensurate magnetic structure with antiparallel correlations between paired spins. Together, these results demonstrate how pressure‐driven structural tuning and competing exchange interactions stabilize unconventional magnetic states in this low‐dimensional magnetic semiconductor.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"99 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-02-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"146169821","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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