In our original publication, “Magnetic field screening of 2D materials revealed by magnetic force microscopy,” we demonstrated that few‐layer graphene (FLG) exhibits a measurable magnetic field screening effect of approximately 0.5% per graphene layer, as revealed by magnetic force microscopy (MFM). Here, we focus on the broader implications of this phenomenon for devices employing FLG as electrodes in van der Waals heterostructures. We highlight that the cumulative diamagnetic screening of FLG can substantially reduce the effective magnetic field experienced by the active region of a device, which must be considered for accurate quantitative interpretation of magnetic field‐dependent measurements. This Addendum clarifies how FLG's intrinsic diamagnetism can influence quantitative analyses and theoretical comparisons, while leaving the qualitative conclusions of our original study unaffected.
{"title":"Addendum to: Magnetic Field Screening of 2D Materials Revealed by Magnetic Force Microscopy","authors":"Guillermo López‐Polín, Miriam Jaafar, Pablo Ares","doi":"10.1002/aelm.202500795","DOIUrl":"https://doi.org/10.1002/aelm.202500795","url":null,"abstract":"In our original publication, “Magnetic field screening of 2D materials revealed by magnetic force microscopy,” we demonstrated that few‐layer graphene (FLG) exhibits a measurable magnetic field screening effect of approximately 0.5% per graphene layer, as revealed by magnetic force microscopy (MFM). Here, we focus on the broader implications of this phenomenon for devices employing FLG as electrodes in van der Waals heterostructures. We highlight that the cumulative diamagnetic screening of FLG can substantially reduce the effective magnetic field experienced by the active region of a device, which must be considered for accurate quantitative interpretation of magnetic field‐dependent measurements. This Addendum clarifies how FLG's intrinsic diamagnetism can influence quantitative analyses and theoretical comparisons, while leaving the qualitative conclusions of our original study unaffected.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"3 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-01-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145908042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study examines gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga 2 O 3 metal‐oxide‐semiconductor field effect transistors on c‐plane sapphire, with emphasis on extending the gate to fully cover the etched recess. All epitaxial layers were grown simultaneously, and devices were fabricated using the same process flow, with gate length as the only design variable. Devices with a 3 µm gate partially cover the recessed region, while those with a 5 µm gate span the entire recess. Electrical measurements show that full recess coverage removes ungated segments, improves electrostatic control, and lowers series resistance. A significant threshold voltage shift, from 7.7 V to 2.4 V, was observed as gate coverage increased from 3 to 5 µm, further validated through TCAD simulations. Consequently, the specific on‐resistance decreases from 1.85 to 1.04 kΩ.mm, and the drain current on/off ratio improves from 1.8 × 10 7 to 1.6 × 10 8 , with normally‐off operation maintained. Capacitance‐voltage analysis further reveals that the field‐effect mobility increases from 2.06 to 5.29 cm 2 /V·s, while the channel electron concentration decreases from 8.2 × 10 16 to 5.4 × 10 16 cm −3 . These results demonstrate that complete recess coverage is an effective approach to enhance device conduction and subthreshold behavior without altering the fabrication process.
{"title":"Effect of Gate Length Relative to Recess Coverage on the Performance of Enhancement‐Mode β‐Ga 2 O 3 MOSFETs","authors":"Ching‐Hsuan Lee, Sheng‐Ti Chung, Siddharth Rana, Chien‐Nan Hsiao, Tejender Singh Rawat, Yi‐Kai Hsiao, Hao‐Chung Kuo, Ray‐Hua Horng","doi":"10.1002/aelm.202500739","DOIUrl":"https://doi.org/10.1002/aelm.202500739","url":null,"abstract":"This study examines gate‐length engineering in recessed‐gate enhancement‐mode β‐Ga <jats:sub>2</jats:sub> O <jats:sub>3</jats:sub> metal‐oxide‐semiconductor field effect transistors on c‐plane sapphire, with emphasis on extending the gate to fully cover the etched recess. All epitaxial layers were grown simultaneously, and devices were fabricated using the same process flow, with gate length as the only design variable. Devices with a 3 µm gate partially cover the recessed region, while those with a 5 µm gate span the entire recess. Electrical measurements show that full recess coverage removes ungated segments, improves electrostatic control, and lowers series resistance. A significant threshold voltage shift, from 7.7 V to 2.4 V, was observed as gate coverage increased from 3 to 5 µm, further validated through TCAD simulations. Consequently, the specific on‐resistance decreases from 1.85 to 1.04 kΩ.mm, and the drain current on/off ratio improves from 1.8 × 10 <jats:sup>7</jats:sup> to 1.6 × 10 <jats:sup>8</jats:sup> , with normally‐off operation maintained. Capacitance‐voltage analysis further reveals that the field‐effect mobility increases from 2.06 to 5.29 cm <jats:sup>2</jats:sup> /V·s, while the channel electron concentration decreases from 8.2 × 10 <jats:sup>16</jats:sup> to 5.4 × 10 <jats:sup>16</jats:sup> cm <jats:sup>−3</jats:sup> . These results demonstrate that complete recess coverage is an effective approach to enhance device conduction and subthreshold behavior without altering the fabrication process.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"38 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145902854","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Md. Ibrahim Kholil, Alexey Lipatov, Saman Bagheri, Hanna Pazniak, Venera Alimova, Alexander Sinitskii
We present a synthetic procedure for large Ti 2 CT x MXene monolayers with the majority of flakes having sizes of 10–15 µm and the largest ones reaching 40 µm, which are used for device fabrication and electrical measurements on a single‐flake level. We demonstrate that if exposed to ambient conditions, Ti 2 CT x monolayers oxidize in an aqueous solution or on a substrate on a time scale of hours, but multilayer flakes are more resistant to environmental degradation. The partially oxidized monolayer Ti 2 CT x flakes exhibit low electrical conductivity and electron mobility, as well as the semiconducting‐like temperature dependence of resistance with d R /d T < 0. However, the more degradation‐resistant multilayer flakes show electrical conductivity of about 3700 S cm −1 and electron mobility of about 1.6 cm 2 V −1 s −1 , which are among the highest values reported for MXene materials, as well as the metallic temperature dependence of resistance with d R /d T > 0, which is expected for Ti 2 CT x with mixed surface terminations (T x = ─F, ─OH, = O) based on prior theoretical calculations. These results correlate with the electrical measurements of Ti 2 CT x films, which showed that the thicker films exhibit better environmental stability. The characteristics of multilayer flakes suggest high intrinsic electrical conductivity of Ti 2 CT x and justify its potential for electronic applications.
我们提出了一种大型Ti 2 CT x MXene单层的合成方法，大多数薄片的尺寸为10-15 μ m，最大的薄片达到40 μ m，用于器件制造和单片水平的电气测量。我们证明，如果暴露在环境条件下，Ti 2 CT x单层在水溶液或衬底上氧化，时间尺度为数小时，但多层薄片更耐环境降解。部分氧化的单层Ti 2 CT x薄片表现出较低的电导率和电子迁移率，以及与d R /d T <； 0相似的半导体温度依赖性。然而,更耐降解量多层片显示电导率约3700厘米−1和电子迁移率约1.6厘米2 V−1−1,这是最高的价值报告MXene材料,金属电阻与温度的依赖关系以及d R / d T祝辞0,这对Ti预计2 x CT混合表面终端(T x = F──哦,= O)基于之前的理论计算。这些结果与Ti 2 CT x薄膜的电测量结果相关联，表明较厚的薄膜具有更好的环境稳定性。多层薄片的特性表明Ti 2 CT x具有高的本征电导率，并证明其在电子应用方面的潜力。
{"title":"Environmental Stability and Electronic Properties of Individual Flakes of Ti 2 CT x MXene","authors":"Md. Ibrahim Kholil, Alexey Lipatov, Saman Bagheri, Hanna Pazniak, Venera Alimova, Alexander Sinitskii","doi":"10.1002/aelm.202500422","DOIUrl":"https://doi.org/10.1002/aelm.202500422","url":null,"abstract":"We present a synthetic procedure for large Ti <jats:sub>2</jats:sub> CT <jats:italic> <jats:sub>x</jats:sub> </jats:italic> MXene monolayers with the majority of flakes having sizes of 10–15 µm and the largest ones reaching 40 µm, which are used for device fabrication and electrical measurements on a single‐flake level. We demonstrate that if exposed to ambient conditions, Ti <jats:sub>2</jats:sub> CT <jats:italic> <jats:sub>x</jats:sub> </jats:italic> monolayers oxidize in an aqueous solution or on a substrate on a time scale of hours, but multilayer flakes are more resistant to environmental degradation. The partially oxidized monolayer Ti <jats:sub>2</jats:sub> CT <jats:italic> <jats:sub>x</jats:sub> </jats:italic> flakes exhibit low electrical conductivity and electron mobility, as well as the semiconducting‐like temperature dependence of resistance with d <jats:italic>R</jats:italic> /d <jats:italic>T</jats:italic> < 0. However, the more degradation‐resistant multilayer flakes show electrical conductivity of about 3700 S cm <jats:sup>−1</jats:sup> and electron mobility of about 1.6 cm <jats:sup>2</jats:sup> V <jats:sup>−1</jats:sup> s <jats:sup>−1</jats:sup> , which are among the highest values reported for MXene materials, as well as the metallic temperature dependence of resistance with d <jats:italic>R</jats:italic> /d <jats:italic>T</jats:italic> > 0, which is expected for Ti <jats:sub>2</jats:sub> CT <jats:italic> <jats:sub>x</jats:sub> </jats:italic> with mixed surface terminations (T <jats:italic> <jats:sub>x</jats:sub> </jats:italic> = ─F, ─OH, = O) based on prior theoretical calculations. These results correlate with the electrical measurements of Ti <jats:sub>2</jats:sub> CT <jats:italic> <jats:sub>x</jats:sub> </jats:italic> films, which showed that the thicker films exhibit better environmental stability. The characteristics of multilayer flakes suggest high intrinsic electrical conductivity of Ti <jats:sub>2</jats:sub> CT <jats:italic> <jats:sub>x</jats:sub> </jats:italic> and justify its potential for electronic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"18 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145902855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The growing challenge of electronic waste drives demand for sustainable, biocompatible technologies and accelerates interest in edible electronics, systems that are safe for ingestion, biodegradable, and environmentally benign. Yet, the absence of mechanically reliable, healthy, and fully edible substrates compatible with scalable fabrication remains a major bottleneck. Here, we present a mechanically stable, fully edible substrate fabricated from wheat bran and algae via compression moulding, whose surface is further modified with chitosan spray coating to enhance water resistance and provide a uniform, coating‐compatible interface for subsequent deposition of functional inks. The substrate exhibits an ultimate tensile strength of ∼2.44 MPa, providing a stable platform for device integration. Subsequently, we develop a food‐grade conductive ink based on activated carbon and gummy bear binder, enabling uniform spray‐coated films with sheet resistance (7.6 kΩ/sq at 10 layers ∼67 µm) and linear Ohmic I–V characteristics. Moreover, electrochemical impedance spectroscopy reveals near‐ideal capacitive behaviour, with phase angle measurements across the 10 3 –10 6 Hz frequency range and Nyquist plots confirming the suitability of the system for energy storage applications. This scalable approach establishes a versatile route toward fully edible electronic platforms, opening opportunities for safe, low‐cost devices in diagnostics, smart packaging, and sustainable IoT applications.
{"title":"Scalable Wheat Bran‐Algae Composites for Edible Electronics with Spray‐Coated Food‐Grade Conductive Inks","authors":"Jaz Johari, Muhua Zhu, Zhiging Wang, Yichen Lang, Georgios Nikiforidis, Mingqing Wang, Mengyan Nie, Shahab Akhavan","doi":"10.1002/aelm.202500708","DOIUrl":"https://doi.org/10.1002/aelm.202500708","url":null,"abstract":"The growing challenge of electronic waste drives demand for sustainable, biocompatible technologies and accelerates interest in edible electronics, systems that are safe for ingestion, biodegradable, and environmentally benign. Yet, the absence of mechanically reliable, healthy, and fully edible substrates compatible with scalable fabrication remains a major bottleneck. Here, we present a mechanically stable, fully edible substrate fabricated from wheat bran and algae via compression moulding, whose surface is further modified with chitosan spray coating to enhance water resistance and provide a uniform, coating‐compatible interface for subsequent deposition of functional inks. The substrate exhibits an ultimate tensile strength of ∼2.44 MPa, providing a stable platform for device integration. Subsequently, we develop a food‐grade conductive ink based on activated carbon and gummy bear binder, enabling uniform spray‐coated films with sheet resistance (7.6 kΩ/sq at 10 layers ∼67 µm) and linear Ohmic I–V characteristics. Moreover, electrochemical impedance spectroscopy reveals near‐ideal capacitive behaviour, with phase angle measurements across the 10 <jats:sup>3</jats:sup> –10 <jats:sup>6</jats:sup> Hz frequency range and Nyquist plots confirming the suitability of the system for energy storage applications. This scalable approach establishes a versatile route toward fully edible electronic platforms, opening opportunities for safe, low‐cost devices in diagnostics, smart packaging, and sustainable IoT applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"268 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-01-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145902852","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anti‐ferroelectrics (AFEs) offer unique properties such as double hysteresis window, high endurance, and low latency, making them appealing for neuromorphic computing architectures. This study introduces a novel, compact, and energy‐efficient neuromorphic circuit for spike‐timing‐dependent plasticity (STDP) synapse using AFE field‐effect transistors (AFeFETs). Although AFeFETs are volatile and unsuitable for storing synaptic weights, carbon nanotube field‐effect transistors (CNTFETs) are employed with multi‐threshold operation to achieve nonvolatility by shifting polarization‐electric field (P‐E) characteristics. By leveraging the tunable hysteresis characteristics and negative differential resistance (NDR) effect of AFeCNTFETs, a nonvolatile ternary weight storage latch is demonstrated to store STDP‐governed synaptic weights. Simulation results show that this synapse improves power efficiency by 30% and saves 93% of energy compared to previous works while remaining immune to power outages. This efficient neuromorphic building block paves the way for enhanced neuromorphic learning architectures.
{"title":"Nanoarchitectonics for Non‐Volatile Ternary STDP Synapse Using Anti‐Ferroelectric Carbon Nanotube Devices","authors":"Mohammad Khaleqi Qaleh Jooq, Fereshteh Behbahani, Amirali Amirsoleimani, Mostafa Rahimi Azghadi, Saeed Afshar","doi":"10.1002/aelm.202500304","DOIUrl":"https://doi.org/10.1002/aelm.202500304","url":null,"abstract":"Anti‐ferroelectrics (AFEs) offer unique properties such as double hysteresis window, high endurance, and low latency, making them appealing for neuromorphic computing architectures. This study introduces a novel, compact, and energy‐efficient neuromorphic circuit for spike‐timing‐dependent plasticity (STDP) synapse using AFE field‐effect transistors (AFeFETs). Although AFeFETs are volatile and unsuitable for storing synaptic weights, carbon nanotube field‐effect transistors (CNTFETs) are employed with multi‐threshold operation to achieve nonvolatility by shifting polarization‐electric field (P‐E) characteristics. By leveraging the tunable hysteresis characteristics and negative differential resistance (NDR) effect of AFeCNTFETs, a nonvolatile ternary weight storage latch is demonstrated to store STDP‐governed synaptic weights. Simulation results show that this synapse improves power efficiency by 30% and saves 93% of energy compared to previous works while remaining immune to power outages. This efficient neuromorphic building block paves the way for enhanced neuromorphic learning architectures.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"381 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145902859","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Aaron Chan, Guoxin Zheng, Dechen Zhang, Yuan Zhu, Kaila Jenkins, Kuan‐Wen Chen, Haozhe Wang, Weiwei Xie, Brianna Billingsley, Tai Kong, Na Hyun Jo, Lu Li
Extreme magnetoresistance (XMR) is a phenomenon characterized by an increase in resistance by factors of 10 4 –10 7 % when a magnetic field is applied. This phenomenon is found in a number of semimetals such as WTe 2 , PtSn 4 , Cd 3 As 2 , and LaSb. The origin of XMR is still hotly debated, possibly with different materials having different (or multiple) explanations. Extreme transverse magnetoresistance of up to 8000% at 14 T and 1.8 K is measured in TiZn 16 , a semimetal with a multitude of bands crossing the Fermi energy, akin to PtSn 4 . The magnetoresistance is suppressed when the magnetic field is rotated to be parallel to the applied current, similar to PtSn 4 and PdSn 4 . The resistance of TiZn 16 follows Kohler's rule, but displays different behavior under an applied transverse field and under a longitudinal magnetic field, suggesting distinct electrical phases. Also present are Shubnikov‐de Haas and de Haas‐van Alphen oscillations with a transverse magnetic field up to 43 T, showing that despite an insulator‐like temperature‐resistance curve, charge carriers are still present. This positions TiZn 16 as an interesting addition to the investigation of XMR materials as a multi‐band metal with complex Fermi surface geometries.
极端磁阻（XMR）是一种现象，其特征是当施加磁场时，电阻会增加10.4% - 10.7%。这种现象在许多半金属中都有发现，如WTe 2、ptsn4、cd3as 2和LaSb。XMR的起源仍然存在激烈的争论，可能不同的材料有不同（或多种）的解释。在14t和1.8 K下，TiZn 16的横向磁阻高达8000%，TiZn 16是一种半金属，具有大量穿越费米能量的能带，类似于PtSn 4。当磁场旋转到与施加电流平行时，磁电阻被抑制，类似于ptsn4和pdsn4。TiZn 16的电阻遵循Kohler规则，但在施加横向磁场和纵向磁场下表现出不同的行为，表明不同的电相。在高达43 T的横向磁场下还存在Shubnikov - de Haas和de Haas - van Alphen振荡，这表明尽管存在类似绝缘体的温度-电阻曲线，但载流子仍然存在。这使得TiZn 16成为XMR材料研究中一个有趣的补充，它是一种具有复杂费米表面几何形状的多波段金属。
{"title":"Extreme Transverse Magnetoresistance in TiZn 16","authors":"Aaron Chan, Guoxin Zheng, Dechen Zhang, Yuan Zhu, Kaila Jenkins, Kuan‐Wen Chen, Haozhe Wang, Weiwei Xie, Brianna Billingsley, Tai Kong, Na Hyun Jo, Lu Li","doi":"10.1002/aelm.202500632","DOIUrl":"https://doi.org/10.1002/aelm.202500632","url":null,"abstract":"Extreme magnetoresistance (XMR) is a phenomenon characterized by an increase in resistance by factors of 10 <jats:sup>4</jats:sup> –10 <jats:sup>7</jats:sup> % when a magnetic field is applied. This phenomenon is found in a number of semimetals such as WTe <jats:sub>2</jats:sub> , PtSn <jats:sub>4</jats:sub> , Cd <jats:sub>3</jats:sub> As <jats:sub>2</jats:sub> , and LaSb. The origin of XMR is still hotly debated, possibly with different materials having different (or multiple) explanations. Extreme transverse magnetoresistance of up to 8000% at 14 T and 1.8 K is measured in TiZn <jats:sub>16</jats:sub> , a semimetal with a multitude of bands crossing the Fermi energy, akin to PtSn <jats:sub>4</jats:sub> . The magnetoresistance is suppressed when the magnetic field is rotated to be parallel to the applied current, similar to PtSn <jats:sub>4</jats:sub> and PdSn <jats:sub>4</jats:sub> . The resistance of TiZn <jats:sub>16</jats:sub> follows Kohler's rule, but displays different behavior under an applied transverse field and under a longitudinal magnetic field, suggesting distinct electrical phases. Also present are Shubnikov‐de Haas and de Haas‐van Alphen oscillations with a transverse magnetic field up to 43 T, showing that despite an insulator‐like temperature‐resistance curve, charge carriers are still present. This positions TiZn <jats:sub>16</jats:sub> as an interesting addition to the investigation of XMR materials as a multi‐band metal with complex Fermi surface geometries.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"49 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145897538","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Cuo Wu, Hao Shen, Richard Schroedter, Chong Peng, Hampus Hoffman, Stefan Slesazeck, Ronald Tetzlaff, Thomas Mikolajick, Benjamin Max
Reversible weight tuning is critical for edge AI chips, enabling online learning and local inference. Conventionally, the transition from analog interfacial switching to abrupt filamentary switching in memristors is commonly considered irreversible, as high electric fields induce conductive filaments, locking devices in the filamentary state. Here, we report that TiN/HfO2/Pt memristors exhibit stable interfacial switching and achieve voltage-driven, repeatable interfacial-to-filamentary-to-interfacial (I-F-I) transitions. Systematic electrical characterization demonstrates more than 10 stable I-F-I transition sequences, controllable I-F-I transition yield exceeding 40%, a preserved resistance window, and an ON/OFF ratio of about 30. High bias activates a fast digital filamentary mode, while low bias restores a linearly tunable analog interfacial mode. Two defect migration models—soft filament and Schottky emission—elucidate this phenomenon. This analog-digital switching could in the future, enable single-chip training and inference and support reconfigurable logic-in-memory architectures, advancing low-power artificial neural networks as well as neuromorphic computing for edge AI applications.
{"title":"Reversible and Controllable Transition Between Filamentary and Interfacial Resistive Switching in HfO2-Based Memristors","authors":"Cuo Wu, Hao Shen, Richard Schroedter, Chong Peng, Hampus Hoffman, Stefan Slesazeck, Ronald Tetzlaff, Thomas Mikolajick, Benjamin Max","doi":"10.1002/aelm.202500644","DOIUrl":"https://doi.org/10.1002/aelm.202500644","url":null,"abstract":"Reversible weight tuning is critical for edge AI chips, enabling online learning and local inference. Conventionally, the transition from analog interfacial switching to abrupt filamentary switching in memristors is commonly considered irreversible, as high electric fields induce conductive filaments, locking devices in the filamentary state. Here, we report that TiN/HfO<sub>2</sub>/Pt memristors exhibit stable interfacial switching and achieve voltage-driven, repeatable interfacial-to-filamentary-to-interfacial (I-F-I) transitions. Systematic electrical characterization demonstrates more than 10 stable I-F-I transition sequences, controllable I-F-I transition yield exceeding 40%, a preserved resistance window, and an ON/OFF ratio of about 30. High bias activates a fast digital filamentary mode, while low bias restores a linearly tunable analog interfacial mode. Two defect migration models—soft filament and Schottky emission—elucidate this phenomenon. This analog-digital switching could in the future, enable single-chip training and inference and support reconfigurable logic-in-memory architectures, advancing low-power artificial neural networks as well as neuromorphic computing for edge AI applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"259 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2026-01-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145897807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Different from traditional ferroelectrics whose polarization stems from ionic displacements mediated by phonons, electronic ferroelectrics exhibit spontaneous polarization originating from polar electronic ordering. Such electronic mechanisms promise devices with ultrafast switching speeds, lower energy consumption, and enhanced resilience to fatigue and depolarization fields inherent in conventional ferroelectrics. While early candidates are restricted to rare oxides and organic charge‐transfer salts, emerging systems—particularly 2D van der Waals moiré heterostructures—have significantly broadened this materials landscape. This review comprehensively examines ferroelectrics governed by electronic mechanisms, categorizing them according to microscopic origins, including spin correlations, charge ordering, orbital interactions, charge‐transfer instabilities, and excitonic phenomena. Representative materials span multiferroics, molecular crystals, and engineered van der Waals architectures. Crucially, we evaluate whether their ferroelectricity qualifies as purely electronic —defined by the absence of ionic displacements during polarization reversal—synthesizing recent theoretical and experimental advances to establish a unified framework for this evolving paradigm.
{"title":"Is There A Pure Electronic Ferroelectric?","authors":"Xudong Wang, Guichen Teng, Xiangjian Meng, Zhenxiang Cheng, Tie Lin, Hao Shen, Xiaodan Wang, Jianlu Wang, Junhao Chu","doi":"10.1002/aelm.202500683","DOIUrl":"https://doi.org/10.1002/aelm.202500683","url":null,"abstract":"Different from traditional ferroelectrics whose polarization stems from ionic displacements mediated by phonons, electronic ferroelectrics exhibit spontaneous polarization originating from polar electronic ordering. Such electronic mechanisms promise devices with ultrafast switching speeds, lower energy consumption, and enhanced resilience to fatigue and depolarization fields inherent in conventional ferroelectrics. While early candidates are restricted to rare oxides and organic charge‐transfer salts, emerging systems—particularly 2D van der Waals moiré heterostructures—have significantly broadened this materials landscape. This review comprehensively examines ferroelectrics governed by electronic mechanisms, categorizing them according to microscopic origins, including spin correlations, charge ordering, orbital interactions, charge‐transfer instabilities, and excitonic phenomena. Representative materials span multiferroics, molecular crystals, and engineered van der Waals architectures. Crucially, we evaluate whether their ferroelectricity qualifies as <jats:italic>purely electronic</jats:italic> —defined by the absence of ionic displacements during polarization reversal—synthesizing recent theoretical and experimental advances to establish a unified framework for this evolving paradigm.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"125 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145894963","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shubham Tyagi, Paresh C. Rout, Shubham Singh, Udo Schwingenschlögl
We investigate the influence of hydrostatic pressure on the physical properties of monolayer for spintronics applications. A phase transition from a ferromagnetic half‐metal to a ferromagnetic semiconductor is unveiled at 4.6 GPa, accompanied by a transition from a non‐polar (1T) to a polar (1H) structure. We demonstrate that hydrostatic pressure elevates the Curie temperature above room temperature (for example, 618 K at 5 GPa) and enhances the magnetic anisotropy energy (for example, 731 per formula unit at 5 GPa). A significant Dzyaloshinskii‐Moriya interaction is present in the 1H structure (due to the broken spatial inversion symmetry) and increases with the hydrostatic pressure. Together with the observation of in‐plane electric polarization (for example, 1.1 pCcm −1 at 5 GPa), this positions the 1H structure as a pioneer in the class of 2D materials. Exploiting the phase transition of monolayer , a single‐material magnetic tunnel junction is proposed and an outstanding tunneling magnetoresistance ratio is demonstrated.
{"title":"Pressure Effects on Monolayer FeCl 2 : Above‐Room‐Temperature Ferromagnetism with In‐Plane Electric Polarization and Interface‐Free Magnetic Tunnel Junctions","authors":"Shubham Tyagi, Paresh C. Rout, Shubham Singh, Udo Schwingenschlögl","doi":"10.1002/aelm.202500230","DOIUrl":"https://doi.org/10.1002/aelm.202500230","url":null,"abstract":"We investigate the influence of hydrostatic pressure on the physical properties of monolayer for spintronics applications. A phase transition from a ferromagnetic half‐metal to a ferromagnetic semiconductor is unveiled at 4.6 GPa, accompanied by a transition from a non‐polar (1T) to a polar (1H) structure. We demonstrate that hydrostatic pressure elevates the Curie temperature above room temperature (for example, 618 K at 5 GPa) and enhances the magnetic anisotropy energy (for example, 731 per formula unit at 5 GPa). A significant Dzyaloshinskii‐Moriya interaction is present in the 1H structure (due to the broken spatial inversion symmetry) and increases with the hydrostatic pressure. Together with the observation of in‐plane electric polarization (for example, 1.1 pCcm <jats:sup>−1</jats:sup> at 5 GPa), this positions the 1H structure as a pioneer in the class of 2D materials. Exploiting the phase transition of monolayer , a single‐material magnetic tunnel junction is proposed and an outstanding tunneling magnetoresistance ratio is demonstrated.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145812993","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yoon‐Seo Kim, Daejung Kim, Ki‐Cheol Song, Yeonhee Lee, Hyeong‐Suk Yoo, Young Jae Kim, Jonghoon Kim, Jin‐Seong Park
Achieving ultrahigh mobility in oxide semiconductors without sacrificing stability has remained a long‐standing challenge owing to their inherent disorder and the tradeoff between mobility and stability. In this study, we demonstrated for the first time that the completeness of atomic layer deposition (ALD) surface reactions is the key factor for the formation of well‐defined vertical heterostructures in amorphous InGaZnO (IGZO) thin films, which in turn trigger quantum confinement effects and 2Delectron gas (2DEG) like interfacial conduction. By comparing high‐reactivity oxygen plasma and low‐reactivity ozone as oxidants, we revealed that only plasma‐assisted ALD achieved complete surface reactions, yielding atomically ordered InO x– (Ga, Zn)O stacks with distinct interfaces. This engineered structure resulted in an exceptional field‐effect mobility (>87 cm 2 V −1 s −1 ) with positive threshold voltage (0.56 V), an apparent two‐step conduction signature, and superior stability of the positive/negative bias temperature stability of 0.35/−0.01 V. Temperature‐dependent transport from room to cryogenic temperature (83K) and high‐temperature annealing (600°C) further confirmed the correlation among reaction completeness, interface quality, and 2DEG‐like interfacial conduction. This study identifies a critical link between ALD surface chemistry and quantum transport in oxides and provides a novel and practical strategy to overcome the mobility–stability tradeoff in next‐generation oxide transistors.
在不牺牲稳定性的情况下实现氧化物半导体的超高迁移率一直是一个长期存在的挑战，因为它们固有的无序性以及迁移率和稳定性之间的权衡。在这项研究中，我们首次证明了原子层沉积（ALD）表面反应的完整性是在非晶InGaZnO （IGZO）薄膜中形成明确的垂直异质结构的关键因素，这反过来又触发量子约束效应和2de电子气体（2DEG）样界面传导。通过比较高反应性氧等离子体和低反应性臭氧作为氧化剂，我们发现只有等离子体辅助ALD才能实现完整的表面反应，生成具有不同界面的原子有序的InO x - (Ga, Zn)O堆叠。这种工程结构在正阈值电压（0.56 V）下具有出色的场效应迁移率（>87 cm 2 V−1 s−1），具有明显的两步传导特征，并且具有优异的正/负偏置温度稳定性（0.35/−0.01 V）。从室温到低温（83K）的温度依赖传输和高温退火（600℃）进一步证实了反应完整性、界面质量和2DEG - like界面传导之间的相关性。本研究确定了ALD表面化学和氧化物中量子输运之间的关键联系，并提供了一种新颖实用的策略来克服下一代氧化物晶体管的迁移率-稳定性权衡。
{"title":"ALD Reactivity‐Driven 2DEG‐Like Interfacial Conduction in Nanolaminate InGaZnO Transistors toward High‐Mobility and Stable Oxide Electronics","authors":"Yoon‐Seo Kim, Daejung Kim, Ki‐Cheol Song, Yeonhee Lee, Hyeong‐Suk Yoo, Young Jae Kim, Jonghoon Kim, Jin‐Seong Park","doi":"10.1002/aelm.202500642","DOIUrl":"https://doi.org/10.1002/aelm.202500642","url":null,"abstract":"Achieving ultrahigh mobility in oxide semiconductors without sacrificing stability has remained a long‐standing challenge owing to their inherent disorder and the tradeoff between mobility and stability. In this study, we demonstrated for the first time that the completeness of atomic layer deposition (ALD) surface reactions is the key factor for the formation of well‐defined vertical heterostructures in amorphous InGaZnO (IGZO) thin films, which in turn trigger quantum confinement effects and 2Delectron gas (2DEG) like interfacial conduction. By comparing high‐reactivity oxygen plasma and low‐reactivity ozone as oxidants, we revealed that only plasma‐assisted ALD achieved complete surface reactions, yielding atomically ordered InO <jats:sub>x–</jats:sub> (Ga, Zn)O stacks with distinct interfaces. This engineered structure resulted in an exceptional field‐effect mobility (>87 cm <jats:sup>2</jats:sup> V <jats:sup>−1</jats:sup> s <jats:sup>−1</jats:sup> ) with positive threshold voltage (0.56 V), an apparent two‐step conduction signature, and superior stability of the positive/negative bias temperature stability of 0.35/−0.01 V. Temperature‐dependent transport from room to cryogenic temperature (83K) and high‐temperature annealing (600°C) further confirmed the correlation among reaction completeness, interface quality, and 2DEG‐like interfacial conduction. This study identifies a critical link between ALD surface chemistry and quantum transport in oxides and provides a novel and practical strategy to overcome the mobility–stability tradeoff in next‐generation oxide transistors.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"28 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-12-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145812992","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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