Bin Zhao, Xuan Zhao, Xiaochen Xun, Fangfang Gao, Qi Li, Jiayi Sun, Tian Ouyang, Qingliang Liao, Yue Zhang
Emerging memristor synapses with ion dynamics have the potential to process spatiotemporal information and can accelerate the development of energy-efficient neuromorphic computing. However, conventional ion-migration-type memristors suffer from low switching speed and uncontrollable conductance modulation, hindering energy-efficient neuromorphic hardware implementation. Here, ion intercalation-mediated conductance switching in MoS2 is introduced for a highly energy-efficient memristor synapse (HEMS) to accurately emulate the bio-synaptic function. Li-ion intercalation into the few-layer MoS2 can induce structural evolution, thereby achieving high-speed and controllable conductance modulation in HEMS. Consequently, the HEMS exhibits highly energy efficiency with a fast switching speed of 500 ns and low energy consumption of 2.85 fJ per synaptic event. The stable bidirectional modulation of synaptic plasticity by consecutive voltage pulses of 5000 times can be achieved in the HEMS. Besides, the HEMS is endowed with logic functions and can process multiple sets of inputs in parallel for information integration. This work offers an alternative strategy for fast-speed conductance modulation via ion intercalation to develop energy-efficient memristors in future neuromorphic computing.
{"title":"Ion Intercalation-Mediated MoS2 Conductance Switching for Highly Energy-Efficient Memristor Synapse","authors":"Bin Zhao, Xuan Zhao, Xiaochen Xun, Fangfang Gao, Qi Li, Jiayi Sun, Tian Ouyang, Qingliang Liao, Yue Zhang","doi":"10.1002/aelm.202400633","DOIUrl":"https://doi.org/10.1002/aelm.202400633","url":null,"abstract":"Emerging memristor synapses with ion dynamics have the potential to process spatiotemporal information and can accelerate the development of energy-efficient neuromorphic computing. However, conventional ion-migration-type memristors suffer from low switching speed and uncontrollable conductance modulation, hindering energy-efficient neuromorphic hardware implementation. Here, ion intercalation-mediated conductance switching in MoS<sub>2</sub> is introduced for a highly energy-efficient memristor synapse (HEMS) to accurately emulate the bio-synaptic function. Li-ion intercalation into the few-layer MoS<sub>2</sub> can induce structural evolution, thereby achieving high-speed and controllable conductance modulation in HEMS. Consequently, the HEMS exhibits highly energy efficiency with a fast switching speed of 500 ns and low energy consumption of 2.85 fJ per synaptic event. The stable bidirectional modulation of synaptic plasticity by consecutive voltage pulses of 5000 times can be achieved in the HEMS. Besides, the HEMS is endowed with logic functions and can process multiple sets of inputs in parallel for information integration. This work offers an alternative strategy for fast-speed conductance modulation via ion intercalation to develop energy-efficient memristors in future neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"84 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143077096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Eleonora Macchia, Anna Maria D'Erchia, Mariapia Caputo, Angelica Bianco, Claudia Leoni, Francesca Intranuovo, Cecilia Scandurra, Lucia Sarcina, Cinzia Di Franco, Paolo Bollella, Gaetano Scamarcio, Luisa Torsi, Graziano Pesole
The replication of Coronaviridae viruses depends on the synthesis of structural proteins expressed through the discontinuous transcription of subgenomic RNAs (sgRNAs). Thus, detecting sgRNAs, which reflect active viral replication, provides valuable insights into infection status. Current diagnostic methods, such as PCR-based assays, often involve high costs, complex equipment, and reliance on highly trained personnel. Additionally, their specificity can be compromised by technical limitations in kit design. While viral culture remains highly accurate, it is impractical for routine diagnostics. In this study, the single-molecule-with-a-large-transistor (SiMoT) technology is presented for detecting sgRNA encoding the nucleocapsid (N) protein in clinical samples. SiMoT incorporates a stable layer of complementary DNA strands on the sensing gate electrode, facilitating rapid, sensitive, and specific sgRNA detection. Among 90 tested samples, SiMoT achieved a diagnostic sensitivity of 98.0% and a specificity of 87.8%, delivering results within 30 min. This user-friendly platform requires minimal sample preparation and offers a cost-effective point-of-care (POC) diagnostic solution. With its demonstrated diagnostic accuracy and scalability, SiMoT represents a promising tool for detecting active viral replication in SARS-CoV-2 and other coronaviruses. It addresses the limitations of existing molecular and culture-based methods while enhancing accessibility to reliable diagnostics.
{"title":"Rapid and Ultra-Sensitive SARS-CoV-2 Subgenomic RNA Detection Using Single-Molecule With a Large Transistor-SiMoT Bioelectronic Platform","authors":"Eleonora Macchia, Anna Maria D'Erchia, Mariapia Caputo, Angelica Bianco, Claudia Leoni, Francesca Intranuovo, Cecilia Scandurra, Lucia Sarcina, Cinzia Di Franco, Paolo Bollella, Gaetano Scamarcio, Luisa Torsi, Graziano Pesole","doi":"10.1002/aelm.202400908","DOIUrl":"https://doi.org/10.1002/aelm.202400908","url":null,"abstract":"The replication of Coronaviridae viruses depends on the synthesis of structural proteins expressed through the discontinuous transcription of subgenomic RNAs (sgRNAs). Thus, detecting sgRNAs, which reflect active viral replication, provides valuable insights into infection status. Current diagnostic methods, such as PCR-based assays, often involve high costs, complex equipment, and reliance on highly trained personnel. Additionally, their specificity can be compromised by technical limitations in kit design. While viral culture remains highly accurate, it is impractical for routine diagnostics. In this study, the single-molecule-with-a-large-transistor (SiMoT) technology is presented for detecting sgRNA encoding the nucleocapsid (N) protein in clinical samples. SiMoT incorporates a stable layer of complementary DNA strands on the sensing gate electrode, facilitating rapid, sensitive, and specific sgRNA detection. Among 90 tested samples, SiMoT achieved a diagnostic sensitivity of 98.0% and a specificity of 87.8%, delivering results within 30 min. This user-friendly platform requires minimal sample preparation and offers a cost-effective point-of-care (POC) diagnostic solution. With its demonstrated diagnostic accuracy and scalability, SiMoT represents a promising tool for detecting active viral replication in SARS-CoV-2 and other coronaviruses. It addresses the limitations of existing molecular and culture-based methods while enhancing accessibility to reliable diagnostics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143077094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kristen Minh‐Thu Nguyen, Zhendong Yang, Allen Tsingyuan Wang, Scott Ambros Wicker, Xiuling Li
Self‐rolled‐up membrane (S‐RuM) 3D microtube inductors represent a significant advancement in miniaturization for radio frequency (RF) integrated circuit applications, particularly internet‐of‐things and 5G/6G communications. These inductors have excellent high‐frequency performance due to better confinement of the magnetic field and weak dependence on substrate conductivity. However, previously reported S‐RuM inductor frequencies are limited by the crosstalk capacitance between overlapping metal strips between rolled‐up turns. This work advances S‐RuM inductor design by co‐optimizing inductance, frequency, and footprint, leading to significant reductions in crosstalk capacitance and enhancements in maximum operating frequencies. Design intricacies tailored to the unique structure of S‐RuM inductors are thoroughly addressed, particularly by mapping the angle of the rolled‐up inductor strips with respect to the number of turns. Self‐resonance frequencies as high as 40–53 GHz (instrument testing limit) are reported for 2–5 rolled‐up turns, demonstrating increases of over 15 GHz from previous S‐RuM inductors. These designs, with footprints of 0.02–0.56 mm2 and inductances of <1 nH to >5 nH at GHz frequencies, demonstrated the effectiveness of co‐designing frequency, footprint, and inductance for RF inductors, openning a new paradigm for miniaturizing high‐frequency on‐chip passive electronic components.
{"title":"High‐Frequency Inductors by Co‐Design Optimization of Self‐Rolled‐up Membrane Technology","authors":"Kristen Minh‐Thu Nguyen, Zhendong Yang, Allen Tsingyuan Wang, Scott Ambros Wicker, Xiuling Li","doi":"10.1002/aelm.202400639","DOIUrl":"https://doi.org/10.1002/aelm.202400639","url":null,"abstract":"Self‐rolled‐up membrane (S‐RuM) 3D microtube inductors represent a significant advancement in miniaturization for radio frequency (RF) integrated circuit applications, particularly internet‐of‐things and 5G/6G communications. These inductors have excellent high‐frequency performance due to better confinement of the magnetic field and weak dependence on substrate conductivity. However, previously reported S‐RuM inductor frequencies are limited by the crosstalk capacitance between overlapping metal strips between rolled‐up turns. This work advances S‐RuM inductor design by co‐optimizing inductance, frequency, and footprint, leading to significant reductions in crosstalk capacitance and enhancements in maximum operating frequencies. Design intricacies tailored to the unique structure of S‐RuM inductors are thoroughly addressed, particularly by mapping the angle of the rolled‐up inductor strips with respect to the number of turns. Self‐resonance frequencies as high as 40–53 GHz (instrument testing limit) are reported for 2–5 rolled‐up turns, demonstrating increases of over 15 GHz from previous S‐RuM inductors. These designs, with footprints of 0.02–0.56 mm<jats:sup>2</jats:sup> and inductances of <1 nH to >5 nH at GHz frequencies, demonstrated the effectiveness of co‐designing frequency, footprint, and inductance for RF inductors, openning a new paradigm for miniaturizing high‐frequency on‐chip passive electronic components.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"25 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143071708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Accurate, non-invasive, and wearable measurement of arterial pressure pulse waveforms is crucial for cardiovascular healthcare, yet remains challenging due to the lack of effective sensors and mounting methods. This study introduces highly sensitive, flexible PZT piezoelectric sensors and an optimized mounting method for accurate radial pulse waveform measurement in natural wrist positions. The sensors incorporate a PZT thin film directly fabricated on a flexible substrate with easily produced parallel-plate electrodes, requiring no poling treatment. The high-quality PZT films exhibit low charge leakage, enabling measurement even at 1 Hz. To ensure comfort and accuracy, a foam pad is used for optimal sensor mounting and investigate how its stress–strain properties affect pulse detection. The optimized sensor device captures waveforms closely matching those from a high-accuracy capacitive force sensor. Despite smaller size and lower mounting load, the sensors show four times the sensitivity of polyvinylidene fluoride sensors and successfully detect age-related changes in waveforms. Additionally, a deep learning model is developed to enable calibration-free conversion of sensor signals to blood pressure (BP), achieving a mean absolute error of 5.82 and 4.60 mmHg for systolic and diastolic BP. These results highlight the potential of this technology for effective cardiovascular monitoring in daily life.
{"title":"Wearable PZT Piezoelectric Sensor Device for Accurate Arterial Pressure Pulse Waveform Measurement","authors":"Minyu Li, Jun Aoyama, Koya Inayoshi, Hedong Zhang","doi":"10.1002/aelm.202400852","DOIUrl":"https://doi.org/10.1002/aelm.202400852","url":null,"abstract":"Accurate, non-invasive, and wearable measurement of arterial pressure pulse waveforms is crucial for cardiovascular healthcare, yet remains challenging due to the lack of effective sensors and mounting methods. This study introduces highly sensitive, flexible PZT piezoelectric sensors and an optimized mounting method for accurate radial pulse waveform measurement in natural wrist positions. The sensors incorporate a PZT thin film directly fabricated on a flexible substrate with easily produced parallel-plate electrodes, requiring no poling treatment. The high-quality PZT films exhibit low charge leakage, enabling measurement even at 1 Hz. To ensure comfort and accuracy, a foam pad is used for optimal sensor mounting and investigate how its stress–strain properties affect pulse detection. The optimized sensor device captures waveforms closely matching those from a high-accuracy capacitive force sensor. Despite smaller size and lower mounting load, the sensors show four times the sensitivity of polyvinylidene fluoride sensors and successfully detect age-related changes in waveforms. Additionally, a deep learning model is developed to enable calibration-free conversion of sensor signals to blood pressure (BP), achieving a mean absolute error of 5.82 and 4.60 mmHg for systolic and diastolic BP. These results highlight the potential of this technology for effective cardiovascular monitoring in daily life.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143050881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The rapid advancement of neuromorphic computing and machine vision drives the need for optoelectronic memories that mimic neural and visual systems, integrating optical sensing, data storage, and processing. Traditional fabrication methods are often complex, multistep processes that struggle to achieve lightweight, scalable, and flexible designs. This limitation highlights the need for alternative approaches like printing technologies to enable flexible optoelectronic memory development. Here, a novel approach is presented to print optoelectronic memories using graphene (Gr)/WS2 nanostructured composite ink. This composite ink utilizes Gr nanosheets as conductive channels and defect sites in WS2 as charge capture centers, forming local heterojunctions that enable efficient photoelectric storage. Two types of Gr/WS2 composite inks are developed, tested, and compared with pure Gr ink. The findings reveal that the Gr/WS2 nanocomposite ink with enhanced edge states exhibits superior memory performance. Devices print using this ink demonstrated the ability to store visual information in both single-pulse and multi-pulse modes, reflecting potential applications in retina-inspired visual persistence and neuromorphic computing. This work highlights the promise of printed 2D material-based optoelectronic memories for advancing scalable, low-cost, and flexible electronic devices.
{"title":"Printed Optoelectronic Memories Using Gr/WS2 Nanostructured Composite Ink for Retina-Inspired Vision Persistent Synapses","authors":"Jiahui Bai, Qiuyan Wang, Qiaoqiao Zheng, Dong Liu, Hongbing Zhan, Renjing Xu, Jiajie Pei","doi":"10.1002/aelm.202400760","DOIUrl":"https://doi.org/10.1002/aelm.202400760","url":null,"abstract":"The rapid advancement of neuromorphic computing and machine vision drives the need for optoelectronic memories that mimic neural and visual systems, integrating optical sensing, data storage, and processing. Traditional fabrication methods are often complex, multistep processes that struggle to achieve lightweight, scalable, and flexible designs. This limitation highlights the need for alternative approaches like printing technologies to enable flexible optoelectronic memory development. Here, a novel approach is presented to print optoelectronic memories using graphene (Gr)/WS<sub>2</sub> nanostructured composite ink. This composite ink utilizes Gr nanosheets as conductive channels and defect sites in WS<sub>2</sub> as charge capture centers, forming local heterojunctions that enable efficient photoelectric storage. Two types of Gr/WS<sub>2</sub> composite inks are developed, tested, and compared with pure Gr ink. The findings reveal that the Gr/WS<sub>2</sub> nanocomposite ink with enhanced edge states exhibits superior memory performance. Devices print using this ink demonstrated the ability to store visual information in both single-pulse and multi-pulse modes, reflecting potential applications in retina-inspired visual persistence and neuromorphic computing. This work highlights the promise of printed 2D material-based optoelectronic memories for advancing scalable, low-cost, and flexible electronic devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"39 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143050882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Longzhu Cai, Jianjing Zhou, Jiaqi Zhou, Lei Zhang, Zhi Hao Jiang, Wei Hong
Optically transparent electromagnetic devices play a crucial role in modern society, yet conventional optically transparent millimeter-wave devices suffer from high return loss, limited phase shift, narrow bandwidth, high profile, and low optical transparency. Current materials, fabrication processes, and design methodologies restrict the development of high-performance optically transparent reflective phase-shifting-surface arrays or reflectarrays. To address this, a design concept for broadband, single-layered, and optically transparent reflectarray antennas is reported, which can be integrated with glass windows for beam manipulation and enhanced indoor signal coverage and wireless communications. The proposed reflectarray element employs a single-layered cyclic olefin copolymer (COC) medium as the dielectric substrate, with fine metal line (FML) patterns under 50 µm width to create multi-resonant structures for phase range broadening. This architecture combines multi-resonant phase-shifting elements with minimal FML structures and low-loss COC substrate, achieving exceptional antenna performance while ensuring high optical transparency. Wireless communication transmission experiments validate the functionality and performance advantages of the fabricated optically transparent reflectarray. These results substantiate the immense potential and broad application prospects of the novel optically transparent COC dielectric material, the FML structure, and the proposed design concepts and methods in advancing high-performance optically transparent reflectarrays and related communication systems.
{"title":"Broadband, Single-Layered, and Optically Transparent Reflective Phase-Shifting-Surface Array for Beam Manipulation and Enhanced Wireless Communications","authors":"Longzhu Cai, Jianjing Zhou, Jiaqi Zhou, Lei Zhang, Zhi Hao Jiang, Wei Hong","doi":"10.1002/aelm.202400827","DOIUrl":"https://doi.org/10.1002/aelm.202400827","url":null,"abstract":"Optically transparent electromagnetic devices play a crucial role in modern society, yet conventional optically transparent millimeter-wave devices suffer from high return loss, limited phase shift, narrow bandwidth, high profile, and low optical transparency. Current materials, fabrication processes, and design methodologies restrict the development of high-performance optically transparent reflective phase-shifting-surface arrays or reflectarrays. To address this, a design concept for broadband, single-layered, and optically transparent reflectarray antennas is reported, which can be integrated with glass windows for beam manipulation and enhanced indoor signal coverage and wireless communications. The proposed reflectarray element employs a single-layered cyclic olefin copolymer (COC) medium as the dielectric substrate, with fine metal line (FML) patterns under 50 µm width to create multi-resonant structures for phase range broadening. This architecture combines multi-resonant phase-shifting elements with minimal FML structures and low-loss COC substrate, achieving exceptional antenna performance while ensuring high optical transparency. Wireless communication transmission experiments validate the functionality and performance advantages of the fabricated optically transparent reflectarray. These results substantiate the immense potential and broad application prospects of the novel optically transparent COC dielectric material, the FML structure, and the proposed design concepts and methods in advancing high-performance optically transparent reflectarrays and related communication systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"26 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143050883","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Joseph Faudou, Mohammed Benwadih, Abdelkader Aliane, Christine Revenant, Daniel Grinberg, Minh‐Quyen Le, Pierre‐Jean Cottinet
Flexible piezoelectric devices have gained considerable interest due to their potential for new applications, particularly in wearable technology. However, a significant challenge remains in measuring low forces on nonplanar and deformable surfaces. Indeed, conformability on complex surfaces induces bending stresses in the piezoelectric sensors, interfering with the measurement of compressive force. Yet such measurements can be valuable, especially in medical applications that involve assessing forces on soft tissues. This study presents an innovative highly sensitive conformable sensor based on a thin film of P(VDF‐TrFE) copolymer. The selection of the substrate is essential for ensuring the device's conformability, but it is also demonstrated that it can provide a substantial improvement in performance if its Young's modulus is lower than that of the active polymer. The effective piezoelectric charge coefficient of a sensor on TPU substrate is measured equal to −340 pC.N−1, representing a tenfold increase in the theoretical compression sensitivity of P(VDF‐TrFE). Additionally, a double‐sided structure to eliminate the contribution of bending in the piezoelectric signal and tackle the challenge of conformability on complex surfaces is developed. Overall, the proposed device shows promising results for measuring low forces applied to soft biological tissues such as skin or heart valve leaflets.
{"title":"Double‐Sided Conformable Piezoelectric Force Sensor with Enhanced Performance and Bending Correction","authors":"Joseph Faudou, Mohammed Benwadih, Abdelkader Aliane, Christine Revenant, Daniel Grinberg, Minh‐Quyen Le, Pierre‐Jean Cottinet","doi":"10.1002/aelm.202400456","DOIUrl":"https://doi.org/10.1002/aelm.202400456","url":null,"abstract":"Flexible piezoelectric devices have gained considerable interest due to their potential for new applications, particularly in wearable technology. However, a significant challenge remains in measuring low forces on nonplanar and deformable surfaces. Indeed, conformability on complex surfaces induces bending stresses in the piezoelectric sensors, interfering with the measurement of compressive force. Yet such measurements can be valuable, especially in medical applications that involve assessing forces on soft tissues. This study presents an innovative highly sensitive conformable sensor based on a thin film of P(VDF‐TrFE) copolymer. The selection of the substrate is essential for ensuring the device's conformability, but it is also demonstrated that it can provide a substantial improvement in performance if its Young's modulus is lower than that of the active polymer. The effective piezoelectric charge coefficient of a sensor on TPU substrate is measured equal to −340 pC.N<jats:sup>−1</jats:sup>, representing a tenfold increase in the theoretical compression sensitivity of P(VDF‐TrFE). Additionally, a double‐sided structure to eliminate the contribution of bending in the piezoelectric signal and tackle the challenge of conformability on complex surfaces is developed. Overall, the proposed device shows promising results for measuring low forces applied to soft biological tissues such as skin or heart valve leaflets.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"34 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026554","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lauren R. Miller, Alejandro Galán‐González, Ben Nicholson, Leon Bowen, Guillaume Monier, Robert J. Borthwick, Freddie White, Mana Saeed, Richard L. Thompson, Christine Robert‐Goumet, Del Atkinson, Dagou A. Zeze, Mujeeb U. Chaudhry
A breakthrough in the fabrication of amorphous Zn‐Sn‐O (ZTO)‐based thin‐film transistors (TFTs) is presented for volatile organic compound (VOC) detection. The incorporation of highly abundant materials offers substantial economic and environmental benefits. However, analyses for the design of a multilayer channel are still limited. This work demonstrates that the chemical environment influences ZTO‐based TFTs' carrier transport properties and can be tailored for detecting specific VOCs, ensuring high specificity in diagnosing life‐threatening conditions through simple breath analysis. A low‐cost, high‐throughput, fully solution‐processed ZTO and ZnO multilayering strategy is adopted. The in‐depth compositional and morphological analyses reveal that low surface roughness, excellent Zn and Sn intermixing, high oxygen vacancy (31.2%), and M‐OH bonding (11.4%) contents may account for the outstanding electrical and sensing performance of ZTO‐ZTO TFTs. Notably, these TFTs achieve near‐zero threshold voltage (2.20 V), excellent switching properties (107), and high mobility (10 cm2V−1s−1). This results in high responsivity to alcohol vapors at low‐voltage operation with peak responsivity for methanol (R = 1.08 × 106) over two orders of magnitude greater than acetone. When miniaturized, these devices serve as easy‐to‐operate sensors, capable of detecting VOCs with high specificity in ambient conditions.
{"title":"Control Strategies for Solution‐Processed ZTO‐Based Thin‐Film Transistors Tailored Toward Volatile Organic Compound Detection","authors":"Lauren R. Miller, Alejandro Galán‐González, Ben Nicholson, Leon Bowen, Guillaume Monier, Robert J. Borthwick, Freddie White, Mana Saeed, Richard L. Thompson, Christine Robert‐Goumet, Del Atkinson, Dagou A. Zeze, Mujeeb U. Chaudhry","doi":"10.1002/aelm.202400810","DOIUrl":"https://doi.org/10.1002/aelm.202400810","url":null,"abstract":"A breakthrough in the fabrication of amorphous Zn‐Sn‐O (ZTO)‐based thin‐film transistors (TFTs) is presented for volatile organic compound (VOC) detection. The incorporation of highly abundant materials offers substantial economic and environmental benefits. However, analyses for the design of a multilayer channel are still limited. This work demonstrates that the chemical environment influences ZTO‐based TFTs' carrier transport properties and can be tailored for detecting specific VOCs, ensuring high specificity in diagnosing life‐threatening conditions through simple breath analysis. A low‐cost, high‐throughput, fully solution‐processed ZTO and ZnO multilayering strategy is adopted. The in‐depth compositional and morphological analyses reveal that low surface roughness, excellent Zn and Sn intermixing, high oxygen vacancy (31.2%), and M‐OH bonding (11.4%) contents may account for the outstanding electrical and sensing performance of ZTO‐ZTO TFTs. Notably, these TFTs achieve near‐zero threshold voltage (2.20 V), excellent switching properties (10<jats:sup>7</jats:sup>), and high mobility (10 cm<jats:sup>2</jats:sup>V<jats:sup>−1</jats:sup>s<jats:sup>−1</jats:sup>). This results in high responsivity to alcohol vapors at low‐voltage operation with peak responsivity for methanol (<jats:italic>R</jats:italic> = 1.08 × 10<jats:sup>6</jats:sup>) over two orders of magnitude greater than acetone. When miniaturized, these devices serve as easy‐to‐operate sensors, capable of detecting VOCs with high specificity in ambient conditions.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"15 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143026555","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Taiming Ji, Zhixu Wu, Pengfei Xiang, Yu Lu, Sisi Liu, Rongxin Tang, Yuhao Wang, Yong Xia
Low-bandgap lead sulfide quantum dots (PbS QDs) can efficiently harness the infrared (IR) light in the solar spectrum beyond 1100 nm, showing great application potential in the bottom subcells of tandem solar cells. However, achieving further efficiency improvements in PbS QDs IR solar cells still faces many challenges. In this work, the effects of the absorber layer thickness, the carrier mobility in the absorber layer, the defect density in the absorber layer and at the absorber/electron transfer layer (ETL) interface, and the doping density of the ETL and hole transfer layer (HTL) on the performance of PbS QDs (≈0.95 eV) IR solar cells are systematically investigated through SCAPS-1D simulation. A theoretical efficiency of 16.95% and 2.15% is calculated for PbS QDs IR solar cells under AM 1.5 and 1100 nm-filtered illumination, respectively. Based on the simulation results, the corresponding PbS QDs IR solar cells are fabricated with an efficiency of 11.53% under AM 1.5 illumination, a remarkable 1100 nm-filtered efficiency of 1.30%, and a high external quantum efficiency of 70.50% at 1290 nm. Hence, these findings will accelerate the optimization of the performance of PbS QDs IR solar cells approaching their theoretical efficiency limit.
{"title":"High-Efficiency PbS Quantum Dots Infrared Solar Cells via Numerical Simulation and Experimental Optimization","authors":"Taiming Ji, Zhixu Wu, Pengfei Xiang, Yu Lu, Sisi Liu, Rongxin Tang, Yuhao Wang, Yong Xia","doi":"10.1002/aelm.202400784","DOIUrl":"https://doi.org/10.1002/aelm.202400784","url":null,"abstract":"Low-bandgap lead sulfide quantum dots (PbS QDs) can efficiently harness the infrared (IR) light in the solar spectrum beyond 1100 nm, showing great application potential in the bottom subcells of tandem solar cells. However, achieving further efficiency improvements in PbS QDs IR solar cells still faces many challenges. In this work, the effects of the absorber layer thickness, the carrier mobility in the absorber layer, the defect density in the absorber layer and at the absorber/electron transfer layer (ETL) interface, and the doping density of the ETL and hole transfer layer (HTL) on the performance of PbS QDs (≈0.95 eV) IR solar cells are systematically investigated through SCAPS-1D simulation. A theoretical efficiency of 16.95% and 2.15% is calculated for PbS QDs IR solar cells under AM 1.5 and 1100 nm-filtered illumination, respectively. Based on the simulation results, the corresponding PbS QDs IR solar cells are fabricated with an efficiency of 11.53% under AM 1.5 illumination, a remarkable 1100 nm-filtered efficiency of 1.30%, and a high external quantum efficiency of 70.50% at 1290 nm. Hence, these findings will accelerate the optimization of the performance of PbS QDs IR solar cells approaching their theoretical efficiency limit.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"74 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142992621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Wojciech Wieczorek, Tomasz Mazur, Weronika Górka-Kumik, Paweł Dąbczyński, Agnieszka Podborska, Andrzej Bernasik, Michał Szuwarzyński
Here, the fabrication method of ultrathin Zener diodes is presented utilizing a novel hybrid system of zinc sulfide (ZnS) nanoparticles embedded within a poly(methacrylic acid) (PMAA) matrix, surface-grafted via ARGET-ATRP polymerization. The controlled polymerization method facilitates precise control over layer thickness, while the in situ synthesis of ZnS nanoparticles ensures uniform coverage throughout the polymer matrix. The obtained hybrid systems with nanometric thickness (<40 nm) are characterized by diode conductivity with a clear breakdown characteristic of the Zener system. The obtained ultra-thin layers on p-doped silicon, in addition to their electrical characteristics, are studied using an atomic force microscope (AFM) and secondary ion mass spectrometry (SIMS) to examine the structure and composition of a hybrid polymer-nanoparticle system.
{"title":"Ultrathin High-Efficiency Zener Diode Fabricated Using Organized ZnS Nanoparticles in Surface-Grafted Poly(methacrylic acid) Matrix","authors":"Wojciech Wieczorek, Tomasz Mazur, Weronika Górka-Kumik, Paweł Dąbczyński, Agnieszka Podborska, Andrzej Bernasik, Michał Szuwarzyński","doi":"10.1002/aelm.202400772","DOIUrl":"https://doi.org/10.1002/aelm.202400772","url":null,"abstract":"Here, the fabrication method of ultrathin Zener diodes is presented utilizing a novel hybrid system of zinc sulfide (ZnS) nanoparticles embedded within a poly(methacrylic acid) (PMAA) matrix, surface-grafted via ARGET-ATRP polymerization. The controlled polymerization method facilitates precise control over layer thickness, while the in situ synthesis of ZnS nanoparticles ensures uniform coverage throughout the polymer matrix. The obtained hybrid systems with nanometric thickness (<40 nm) are characterized by diode conductivity with a clear breakdown characteristic of the Zener system. The obtained ultra-thin layers on p-doped silicon, in addition to their electrical characteristics, are studied using an atomic force microscope (AFM) and secondary ion mass spectrometry (SIMS) to examine the structure and composition of a hybrid polymer-nanoparticle system.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-01-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142987623","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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