Dielectric materials with high relative permittivity, i.e., high-k dielectrics, are in great demand for application as gate dielectric for the development of field-effect transistors operating at low voltages. However, a high-k gate dielectric does not always produce favorable outcomes, particularly in field-effect transistors based on organic semiconductors (OFETs). Contradicting experimental results have been reported, with some studies showing compromised OFET performance, while others demonstrate enhanced performance when using high-k gate dielectrics. Currently, no comprehensive or systematic study has been conducted to compare or integrate these conflicting results. As a result, the relative validity and broader implications of these conflicting findings remain uncertain. Here, the effects of high-k gate dielectrics with systematically varied dielectric constants on OFET performance are systematically investigated and the inconsistencies in the literature are resolved. By employing a highly miscible high-k polymer blend system, it is demonstrated that both positive and negative correlations of dielectric constant and field-effect mobility exist in different semiconductor systems. These results provide a strategy to rationally design organic transistors that incorporate high-k dielectrics, without compromising the field-effect mobility due to the broadening of the density of states.
具有高相对介电常数的介电材料，即高 K 介电材料，在开发低电压下工作的场效应晶体管时被用作栅极介电材料，需求量很大。然而，高 K 栅极电介质并不总能产生有利的结果，尤其是在基于有机半导体（OFET）的场效应晶体管中。有报道称实验结果相互矛盾，一些研究表明 OFET 性能受到影响，而另一些研究则表明使用高 K 栅极电介质后性能得到提高。目前，还没有进行全面或系统的研究来比较或整合这些相互矛盾的结果。因此，这些相互矛盾的研究结果的相对有效性和更广泛的影响仍不确定。在此，我们系统地研究了具有系统变化介电常数的高 k 栅极电介质对 OFET 性能的影响，并解决了文献中的不一致问题。通过采用高度混溶的高 k 聚合物共混体系，证明了在不同的半导体体系中，介电常数和场效应迁移率既存在正相关关系，也存在负相关关系。这些结果为合理设计含有高 k 电介质的有机晶体管提供了一种策略，同时不会因为状态密度的扩大而影响场效应迁移率。
{"title":"Resolving the High-k Paradox in Organic Field-Effect Transistors Through Rational Dielectric Design","authors":"Beomjin Jeong, Kamal Asadi","doi":"10.1002/aelm.202500040","DOIUrl":"https://doi.org/10.1002/aelm.202500040","url":null,"abstract":"Dielectric materials with high relative permittivity, i.e., high-k dielectrics, are in great demand for application as gate dielectric for the development of field-effect transistors operating at low voltages. However, a high-k gate dielectric does not always produce favorable outcomes, particularly in field-effect transistors based on organic semiconductors (OFETs). Contradicting experimental results have been reported, with some studies showing compromised OFET performance, while others demonstrate enhanced performance when using high-k gate dielectrics. Currently, no comprehensive or systematic study has been conducted to compare or integrate these conflicting results. As a result, the relative validity and broader implications of these conflicting findings remain uncertain. Here, the effects of high-k gate dielectrics with systematically varied dielectric constants on OFET performance are systematically investigated and the inconsistencies in the literature are resolved. By employing a highly miscible high-k polymer blend system, it is demonstrated that both positive and negative correlations of dielectric constant and field-effect mobility exist in different semiconductor systems. These results provide a strategy to rationally design organic transistors that incorporate high-k dielectrics, without compromising the field-effect mobility due to the broadening of the density of states.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"56 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143666695","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Swapnodoot Ganguly, Krishna Nama Manjunatha, Shashi Paul
The traditional domination of silicon (Si) in device fabrication is increasingly infiltrated by state-of-the-art wide bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC). However, the performance of these wide bandgap semiconductors has not yet exceeded the optical material limitation, which leaves ample room for further development. Gallium oxide (Ga2O3) has surfaced as the preferred material for next-generation device fabrication, as it has a wider bandgap (≈4.5–5.7 eV), an estimated twofold greater breakdown field strength of 8 MV cm−1, and a higher Baliga's figure of merit(BFOM) (>3000) than SiC and GaN, therefore pushing the limit. In this review, the properties of gallium oxide, several methods for epitaxial growth, its energy band, and its broad spectrum of applications are discussed. Metals for achieving different types of contact and the influence of interfacial reactions are additionally assessed. Furthermore, defects and challenges such as p-type doping, integration with heterostructures, the formation of superlattices, and thermal management associated with the use of this material are also reviewed.
{"title":"Advances in Gallium Oxide: Properties, Applications, and Future Prospects","authors":"Swapnodoot Ganguly, Krishna Nama Manjunatha, Shashi Paul","doi":"10.1002/aelm.202400690","DOIUrl":"https://doi.org/10.1002/aelm.202400690","url":null,"abstract":"The traditional domination of silicon (Si) in device fabrication is increasingly infiltrated by state-of-the-art wide bandgap semiconductors such as gallium nitride (GaN) and silicon carbide (SiC). However, the performance of these wide bandgap semiconductors has not yet exceeded the optical material limitation, which leaves ample room for further development. Gallium oxide (Ga<sub>2</sub>O<sub>3</sub>) has surfaced as the preferred material for next-generation device fabrication, as it has a wider bandgap (≈4.5–5.7 eV), an estimated twofold greater breakdown field strength of 8 MV cm<sup>−1</sup>, and a higher Baliga's figure of merit(BFOM) (>3000) than SiC and GaN, therefore pushing the limit. In this review, the properties of gallium oxide, several methods for epitaxial growth, its energy band, and its broad spectrum of applications are discussed. Metals for achieving different types of contact and the influence of interfacial reactions are additionally assessed. Furthermore, defects and challenges such as p-type doping, integration with heterostructures, the formation of superlattices, and thermal management associated with the use of this material are also reviewed.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"12 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143666696","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Ramin Karimi Azari, Luan Pereira Camargo, José Ramón Herrera Garza, Liam Collins, Wan− Yu Tsai, Lariel Chagas da Silva Neres, Patrick Dang, Martin Schwellberger Barbosa, Clara Santato
Neuromorphic systems, inspired by the human brain, promise significant advancements in computational efficiency and power consumption by integrating processing and memory functions, thereby addressing the von Neumann bottleneck. This paper explores the synaptic plasticity of a WO3-based ion-gated transistor () in [EMIM][TFSI] and a 0.1 mol L−1 LiTFSI in [EMIM][TFSI] for neuromorphic computing applications. Cyclic voltammetry (CV), transistor characteristics, and atomic force microscopy (AFM) force–distance (FD) profiling analyses reveal that Li+ brings about ion intercalation, together with higher mobility and conductance, and slower response time (τ). WO3 IGTs exhibit spike amplitude-dependent plasticity (SADP), spike number-dependent plasticity (SNDP), spike duration-dependent plasticity (SDDP), frequency-dependent plasticity (FDP), and paired-pulse facilitation (PPF), which are all crucial for mimicking biological synaptic functions and understanding how to achieve different types of plasticity in the same IGT. The findings underscore the importance of selecting the appropriate ionic medium to optimize the performance of synaptic transistors, enabling the development of neuromorphic systems capable of adaptive learning and real-time processing, which are essential for applications in artificial intelligence (AI).
{"title":"Emulation of Synaptic Plasticity in WO3-Based Ion-Gated Transistors","authors":"Ramin Karimi Azari, Luan Pereira Camargo, José Ramón Herrera Garza, Liam Collins, Wan− Yu Tsai, Lariel Chagas da Silva Neres, Patrick Dang, Martin Schwellberger Barbosa, Clara Santato","doi":"10.1002/aelm.202400807","DOIUrl":"https://doi.org/10.1002/aelm.202400807","url":null,"abstract":"Neuromorphic systems, inspired by the human brain, promise significant advancements in computational efficiency and power consumption by integrating processing and memory functions, thereby addressing the von Neumann bottleneck. This paper explores the synaptic plasticity of a WO<sub>3</sub>-based ion-gated transistor () in [EMIM][TFSI] and a 0.1 mol L<sup>−1</sup> LiTFSI in [EMIM][TFSI] for neuromorphic computing applications. Cyclic voltammetry (CV), transistor characteristics, and atomic force microscopy (AFM) force–distance (FD) profiling analyses reveal that Li<sup>+</sup> brings about ion intercalation, together with higher mobility and conductance, and slower response time (τ). WO<sub>3</sub> IGTs exhibit spike amplitude-dependent plasticity (SADP), spike number-dependent plasticity (SNDP), spike duration-dependent plasticity (SDDP), frequency-dependent plasticity (FDP), and paired-pulse facilitation (PPF), which are all crucial for mimicking biological synaptic functions and understanding how to achieve different types of plasticity in the same IGT. The findings underscore the importance of selecting the appropriate ionic medium to optimize the performance of synaptic transistors, enabling the development of neuromorphic systems capable of adaptive learning and real-time processing, which are essential for applications in artificial intelligence (AI).","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"91 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143660537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sehyun Park, Seongyeop Kim, Soojin Lee, Vladimir V. Tsukruk, SeungHyun Park, Hyo-Ryoung Lim
Microfluidic-based wearable electrochemical sensors represent a transformative approach to non-invasive, real-time health monitoring through continuous biochemical analysis of body fluids such as sweat, saliva, and interstitial fluid. These systems offer significant potential for personalized healthcare and disease management by enabling real-time detection of key biomarkers. However, challenges remain in optimizing microfluidic channel design, ensuring consistent biofluid collection, balancing high-resolution fabrication with scalability, integrating flexible biocompatible materials, and establishing standardized validation protocols. This review explores advancements in microfluidic design, fabrication techniques, and integrated electrochemical sensors that have improved sensitivity, selectivity, and durability. Conventional photolithography, 3D printing, and laser-based fabrication methods are compared, highlighting their mechanisms, advantages, and trade-offs in microfluidic channel production. The application section summarizes strategies to overcome variability in biofluid composition, sensor drift, and user adaptability through innovative solutions such as hybrid material integration, self-powered systems, and AI-assisted data analysis. By analyzing recent breakthroughs, this paper outlines critical pathways for expanding wearable sensor technologies and achieving seamless operation in diverse real-world settings, paving the way for a new era of digital health.
{"title":"Advanced Microfluidic-Based Wearable Electrochemical Sensors for Continuous Biochemical Monitoring","authors":"Sehyun Park, Seongyeop Kim, Soojin Lee, Vladimir V. Tsukruk, SeungHyun Park, Hyo-Ryoung Lim","doi":"10.1002/aelm.202500010","DOIUrl":"https://doi.org/10.1002/aelm.202500010","url":null,"abstract":"Microfluidic-based wearable electrochemical sensors represent a transformative approach to non-invasive, real-time health monitoring through continuous biochemical analysis of body fluids such as sweat, saliva, and interstitial fluid. These systems offer significant potential for personalized healthcare and disease management by enabling real-time detection of key biomarkers. However, challenges remain in optimizing microfluidic channel design, ensuring consistent biofluid collection, balancing high-resolution fabrication with scalability, integrating flexible biocompatible materials, and establishing standardized validation protocols. This review explores advancements in microfluidic design, fabrication techniques, and integrated electrochemical sensors that have improved sensitivity, selectivity, and durability. Conventional photolithography, 3D printing, and laser-based fabrication methods are compared, highlighting their mechanisms, advantages, and trade-offs in microfluidic channel production. The application section summarizes strategies to overcome variability in biofluid composition, sensor drift, and user adaptability through innovative solutions such as hybrid material integration, self-powered systems, and AI-assisted data analysis. By analyzing recent breakthroughs, this paper outlines critical pathways for expanding wearable sensor technologies and achieving seamless operation in diverse real-world settings, paving the way for a new era of digital health.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"24 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Onur Toprak, Florian Maudet, Markus Wollgarten, Charlotte Van Dijck, Roland Thewes, Veeresh Deshpande, Catherine Dubourdieu
A memristive device is presented based on a Ti/GaOx/W stack with an amorphous GaOx layer deposited at a low temperature (250 °C) using plasma-enhanced atomic layer deposition. The device fabrication is compatible with a standard complementary metal oxide semiconductor back-end-of-line technology. The area dependence of the resistance values for both high and low resistance states indicates that switching takes place over the entire device area via a non-filamentary-based mechanism. Evidence is provided that the switching process originates from a field-driven oxygen exchange between the interfacial TiOx layer and the GaOx one as well as from the charging/discharging of interfacial trap states. The devices reveal self-rectifying characteristics with high cycle-to-cycle reproducibility. Multiple states can be programmed with 12 distinct intermediate states during potentiation, and 11 distinct states during depression. This amorphous GaOx-based memristive device with highly reproducible multi-level resistance states shows great potential for enabling artificial synapses in neuromorphic applications.
{"title":"Amorphous Gallium-Oxide-Based Non-Filamentary Memristive Device with Highly Repeatable Multiple Resistance States","authors":"Onur Toprak, Florian Maudet, Markus Wollgarten, Charlotte Van Dijck, Roland Thewes, Veeresh Deshpande, Catherine Dubourdieu","doi":"10.1002/aelm.202400765","DOIUrl":"https://doi.org/10.1002/aelm.202400765","url":null,"abstract":"A memristive device is presented based on a Ti/GaO<sub>x</sub>/W stack with an amorphous GaO<sub>x</sub> layer deposited at a low temperature (250 °C) using plasma-enhanced atomic layer deposition. The device fabrication is compatible with a standard complementary metal oxide semiconductor back-end-of-line technology. The area dependence of the resistance values for both high and low resistance states indicates that switching takes place over the entire device area via a non-filamentary-based mechanism. Evidence is provided that the switching process originates from a field-driven oxygen exchange between the interfacial TiO<sub>x</sub> layer and the GaO<sub>x</sub> one as well as from the charging/discharging of interfacial trap states. The devices reveal self-rectifying characteristics with high cycle-to-cycle reproducibility. Multiple states can be programmed with 12 distinct intermediate states during potentiation, and 11 distinct states during depression. This amorphous GaO<sub>x</sub>-based memristive device with highly reproducible multi-level resistance states shows great potential for enabling artificial synapses in neuromorphic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"23 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong-Wook Kim
The integration of silver nanowire (AgNW) networks with MoS2/ZnO heterojunctions leads to a remarkable enhancement in surface photovoltage (SPV) response. In the visible wavelength range, the heterojunctions with AgNWs achieve an SPV signal of ≈200 mV, a fourfold increase compared to the counterparts without AgNWs (≈50 mV). Wavelength-dependent nanoscopic SPV mapping suggests that this enhancement originates from efficient charge transfer between MoS2 and ZnO. Moreover, the embedded AgNWs raise the local electric potential at the MoS2 surface by several tens of mV, thereby facilitating the collection of photogenerated electrons. Optical calculations reveal that AgNWs concentrate incident light in neighboring layers across a broad wavelength range, further boosting photocarrier generation. These results, along with photoluminescence spectra, suggest that photocarrier transfer at the MoS2/ZnO heterointerfaces is significantly enhanced due to the synergistic effects of light concentration, local potential modifications, and improved electric conduction caused by the AgNW networks.
{"title":"Ag Nanowire-Integrated MoS2/ZnO Heterojunctions for Highly Efficient Photogenerated Charge Transfer","authors":"Anh Thi Nguyen, Jungyoon Cho, Malkeshkumar Patel, Duc Anh Vu, Jungeun Song, Dongseok Suh, Ambrose Seo, Joondong Kim, Dong-Wook Kim","doi":"10.1002/aelm.202400744","DOIUrl":"https://doi.org/10.1002/aelm.202400744","url":null,"abstract":"The integration of silver nanowire (AgNW) networks with MoS<sub>2</sub>/ZnO heterojunctions leads to a remarkable enhancement in surface photovoltage (SPV) response. In the visible wavelength range, the heterojunctions with AgNWs achieve an SPV signal of ≈200 mV, a fourfold increase compared to the counterparts without AgNWs (≈50 mV). Wavelength-dependent nanoscopic SPV mapping suggests that this enhancement originates from efficient charge transfer between MoS<sub>2</sub> and ZnO. Moreover, the embedded AgNWs raise the local electric potential at the MoS<sub>2</sub> surface by several tens of mV, thereby facilitating the collection of photogenerated electrons. Optical calculations reveal that AgNWs concentrate incident light in neighboring layers across a broad wavelength range, further boosting photocarrier generation. These results, along with photoluminescence spectra, suggest that photocarrier transfer at the MoS<sub>2</sub>/ZnO heterointerfaces is significantly enhanced due to the synergistic effects of light concentration, local potential modifications, and improved electric conduction caused by the AgNW networks.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"183 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653809","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jae-Soon Yang, Min-Ho Seo, Min-Seung Jo, Kwang-Wook Choi, Jae-Shin Lee, Myung-Kun Chung, Bon-Jae Koo, Jae-Young Yoo, Jun-Bo Yoon
Flexible pressure sensors have emerged as indispensable components in advancing wearable electronics, healthcare systems, and next-generation human-machine interfaces. To enable these applications, significant progress has been made in improving the sensitivity of flexible pressure sensors. However, achieving bending insensitivity—crucial for reliable pressure detection under dynamic and curved conditions—remains a critical challenge. In this study, a high-performance flexible capacitive pressure sensor is presented that successfully integrates bending insensitivity with enhanced pressure sensitivity. By leveraging the percolation effect within a sub-100 nm nanograting structure, the design of the pressure sensor is optimized through numerical analysis and finite element method (FEM) simulations. Fabricated using a nanoscale wet-chemical digital etching process and nanoimprint lithography, the sensor features a sub-100 nm valley nanograting structure. It exhibits an exceptional sensitivity of 0.05 kPa⁻¹, achieving capacitance changes 4.2 times greater than those of flat substrate designs. Furthermore, the sub-100 nm nanostructured pressure sensor effectively reduces bending strain to 0.175 times that of flat substrates, ensuring stable performance even at a 2.5 mm radius of curvature. This highly reliable flexible pressure sensor array enables real-time pressure mapping and human artery pulse monitoring, making it highly suitable for tactile and wearable sensing applications.
{"title":"Enhanced Percolation Effect in Sub-100 Nm Nanograting Structure for High-Performance Bending Insensitive Flexible Pressure Sensor","authors":"Jae-Soon Yang, Min-Ho Seo, Min-Seung Jo, Kwang-Wook Choi, Jae-Shin Lee, Myung-Kun Chung, Bon-Jae Koo, Jae-Young Yoo, Jun-Bo Yoon","doi":"10.1002/aelm.202400980","DOIUrl":"https://doi.org/10.1002/aelm.202400980","url":null,"abstract":"Flexible pressure sensors have emerged as indispensable components in advancing wearable electronics, healthcare systems, and next-generation human-machine interfaces. To enable these applications, significant progress has been made in improving the sensitivity of flexible pressure sensors. However, achieving bending insensitivity—crucial for reliable pressure detection under dynamic and curved conditions—remains a critical challenge. In this study, a high-performance flexible capacitive pressure sensor is presented that successfully integrates bending insensitivity with enhanced pressure sensitivity. By leveraging the percolation effect within a sub-100 nm nanograting structure, the design of the pressure sensor is optimized through numerical analysis and finite element method (FEM) simulations. Fabricated using a nanoscale wet-chemical digital etching process and nanoimprint lithography, the sensor features a sub-100 nm valley nanograting structure. It exhibits an exceptional sensitivity of 0.05 kPa⁻¹, achieving capacitance changes 4.2 times greater than those of flat substrate designs. Furthermore, the sub-100 nm nanostructured pressure sensor effectively reduces bending strain to 0.175 times that of flat substrates, ensuring stable performance even at a 2.5 mm radius of curvature. This highly reliable flexible pressure sensor array enables real-time pressure mapping and human artery pulse monitoring, making it highly suitable for tactile and wearable sensing applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"91 4 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653807","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Md Redwanul Islam, Niklas Wolff, Georg Schönweger, Tom-Niklas Kreutzer, Margaret Brown, Maike Gremmel, Eric S. Ollanescu-Orendi, Patrik Straňák, Lutz Kirste, Geoff L. Brennecka, Simon Fichtner, Lorenz Kienle
This study examines systematic oxygen (O)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al0.73Sc0.27N thin films, along with its impact on the material structure and the polarity of the as-grown films. The O in the bulk Al0.73Sc0.27N was introduced through an external gas source during the reactive sputter process. In comparison to samples without doping, O-doped films showed almost a fourfold reduction of the overall leakage current near the coercive field. In addition, doping resulted in the reduction of the steady-state leakage currents by roughly one order of magnitude at sub-coercive fields. The microstructure analysis through X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) indicated no notable structural degradation in the bulk Al0.73Sc0.27N. The maximum O-doped film exhibited a c-axis out-of-plane texture increase of only 20%, rising from 1.8°, while chemical mapping indicated a consistent distribution of O throughout the bulk. Our results further demonstrate the ability to control the as-deposited polarity of Al0.73Sc0.27N via the O-concentration, changing from nitrogen (N)- to metal (M)-polar orientation. Thus, this article presents a promising approach to mitigate the leakage current in wurtzite-type Al0.73Sc0.27N without incurring any significant structural degradation of the bulk thin film, thereby making ferroelectric nitrides more suitable for microelectronic applications.
{"title":"Oxygen Doping in Ferroelectric Wurtzite-type Al0.73Sc0.27N: Improved Leakage and Polarity Control","authors":"Md Redwanul Islam, Niklas Wolff, Georg Schönweger, Tom-Niklas Kreutzer, Margaret Brown, Maike Gremmel, Eric S. Ollanescu-Orendi, Patrik Straňák, Lutz Kirste, Geoff L. Brennecka, Simon Fichtner, Lorenz Kienle","doi":"10.1002/aelm.202400874","DOIUrl":"https://doi.org/10.1002/aelm.202400874","url":null,"abstract":"This study examines systematic oxygen (<b>O</b>)-incorporation to reduce total leakage currents in sputtered wurtzite-type ferroelectric Al<sub>0.73</sub>Sc<sub>0.27</sub>N thin films, along with its impact on the material structure and the polarity of the as-grown films. The <b>O</b> in the bulk Al<sub>0.73</sub>Sc<sub>0.27</sub>N was introduced through an external gas source during the reactive sputter process. In comparison to samples without doping, <b>O</b>-doped films showed almost a fourfold reduction of the overall leakage current near the coercive field. In addition, doping resulted in the reduction of the steady-state leakage currents by roughly one order of magnitude at sub-coercive fields. The microstructure analysis through X-ray diffraction (XRD) and scanning transmission electron microscopy (STEM) indicated no notable structural degradation in the bulk Al<sub>0.73</sub>Sc<sub>0.27</sub>N. The maximum O-doped film exhibited a c-axis out-of-plane texture increase of only 20%, rising from 1.8°, while chemical mapping indicated a consistent distribution of <b>O</b> throughout the bulk. Our results further demonstrate the ability to control the as-deposited polarity of Al<sub>0.73</sub>Sc<sub>0.27</sub>N via the <b>O</b>-concentration, changing from nitrogen (N)- to metal (M)-polar orientation. Thus, this article presents a promising approach to mitigate the leakage current in wurtzite-type Al<sub>0.73</sub>Sc<sub>0.27</sub>N without incurring any significant structural degradation of the bulk thin film, thereby making ferroelectric nitrides more suitable for microelectronic applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"22 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653811","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study investigates the effects of various ion implantation processes on the electrical performance of flexible low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) backplanes. The introduction of BF2 ion implantation induces an additional shallow defect level near the valence band edge within the polycrystalline silicon band gap, as confirmed by deep-level transient spectroscopy (DLTS). Simultaneously, this process reduces deep-level traps within the band gap. Density functional theory (DFT) calculations further reveal that the BF2 clusters in polycrystalline silicon function as donors, effectively passivating defect states within the TFT channel. This effect contributes to the observed reduction in deep-level traps. Consequently, BF2-doped TFT channels exhibit a lower density of deep-level traps, leading to enhanced electrical stability of the TFT devices under continuous electrical stress. As a result, AMOLED displays driven by these stabilized TFT backplanes demonstrate reduced image sticking and improved image quality. The above achievements provide a systematic methodology that combines experimental analysis and theoretical model calculation for the in-depth exploration of the intrinsic mechanisms of device performance in the display industry.
{"title":"TFT Backplanes Doped by BF2 Ion for Improved Stability and AMOLED Display Quality","authors":"Ying Shen, Fa-Hsyang Chen, Dongliang Yu, Xue Liu, Yinghai Ma, Xuyang Zhang, Feiyue Cheng, Xiujian Zhu, Xuecheng Zou","doi":"10.1002/aelm.202400989","DOIUrl":"https://doi.org/10.1002/aelm.202400989","url":null,"abstract":"This study investigates the effects of various ion implantation processes on the electrical performance of flexible low-temperature polycrystalline silicon (LTPS) thin-film transistor (TFT) backplanes. The introduction of BF<sub>2</sub> ion implantation induces an additional shallow defect level near the valence band edge within the polycrystalline silicon band gap, as confirmed by deep-level transient spectroscopy (DLTS). Simultaneously, this process reduces deep-level traps within the band gap. Density functional theory (DFT) calculations further reveal that the BF<sub>2</sub> clusters in polycrystalline silicon function as donors, effectively passivating defect states within the TFT channel. This effect contributes to the observed reduction in deep-level traps. Consequently, BF<sub>2</sub>-doped TFT channels exhibit a lower density of deep-level traps, leading to enhanced electrical stability of the TFT devices under continuous electrical stress. As a result, AMOLED displays driven by these stabilized TFT backplanes demonstrate reduced image sticking and improved image quality. The above achievements provide a systematic methodology that combines experimental analysis and theoretical model calculation for the in-depth exploration of the intrinsic mechanisms of device performance in the display industry.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"17 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143653813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shubhradip Guchait, Diego R. Hinojosa, Nathan James Pataki, Said Oummouch, Laurent Herrmann, Mario Caironi, Michael Sommer, Martin Brinkmann
This study demonstrates the possibility to enhance thermoelectric properties of n-type benzodifuranone-based copolymers using a combination of polymer orientation (using high temperature rubbing) and sequential doping with the dopant N-DMBI-H. It focuses on the impact of the side chain length and the chemical nature of the comonomer (thiophene vs furan) on the efficacy of this methodology that preserves the facile solution-processability of this polymer family and enables effective sequential doping without a thermal activation step. The combination of high temperature rubbing and thermal annealing helps reach a high orientation of the copolymers with the thiophene comonomer regardless of the length of the side chains whereas the furan-based polymer is marginally aligned. The high orientation of thiophene-based copolymers results in a strong improvement of electrical conductivity and power factors reaching up to 9.8 ± 1.6 S cm−1 and 8 ± 3 µW m−1.K2, respectively.
{"title":"Thermoelectric Properties of a Family of Benzodifuranone-Based Conjugated Copolymers in Oriented Thin Films Doped Sequentially With NDMBI-H","authors":"Shubhradip Guchait, Diego R. Hinojosa, Nathan James Pataki, Said Oummouch, Laurent Herrmann, Mario Caironi, Michael Sommer, Martin Brinkmann","doi":"10.1002/aelm.202500047","DOIUrl":"https://doi.org/10.1002/aelm.202500047","url":null,"abstract":"This study demonstrates the possibility to enhance thermoelectric properties of n-type benzodifuranone-based copolymers using a combination of polymer orientation (using high temperature rubbing) and sequential doping with the dopant N-DMBI-H. It focuses on the impact of the side chain length and the chemical nature of the comonomer (thiophene vs furan) on the efficacy of this methodology that preserves the facile solution-processability of this polymer family and enables effective sequential doping without a thermal activation step. The combination of high temperature rubbing and thermal annealing helps reach a high orientation of the copolymers with the thiophene comonomer regardless of the length of the side chains whereas the furan-based polymer is marginally aligned. The high orientation of thiophene-based copolymers results in a strong improvement of electrical conductivity and power factors reaching up to 9.8 ± 1.6 S cm<sup>−1</sup> and 8 ± 3 µW m<sup>−1.</sup>K<sup>2</sup>, respectively.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"214 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143641138","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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