Han Yan, Pingping Zhuang, Bo Li, Tian Ye, Changjie Zhou, Yushan Chen, Tiejun Li, Weiwei Cai, Daquan Yu, Jing Liu, Weiyi Lin
2D semiconductors have demonstrated outstanding switching performance in resistive random-access memory (RRAM). Despite the proposed resistive switching (RS) mechanism involving the penetration of electrode metal atoms, direct observation of metal penetration in these van-der-Waals stacked 2D semiconductors remains absent. This study utilizes 2D molybdenum disulfide (MoS2) as the switching material, employing gold and multilayer graphene as electrodes. Through analysis of the switching characteristics of these RRAM devices, the pivotal role of grain boundaries and metal atoms is identify in achieving RS. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy provide direct evidence of metal penetration into multilayer MoS2. This study offers valuable insights into the RS mechanism in memristors based on multilayer MoS2, providing guidance for designing and optimizing 2D material memristive devices.
{"title":"Metal Penetration and Grain Boundary in MoS2 Memristors","authors":"Han Yan, Pingping Zhuang, Bo Li, Tian Ye, Changjie Zhou, Yushan Chen, Tiejun Li, Weiwei Cai, Daquan Yu, Jing Liu, Weiyi Lin","doi":"10.1002/aelm.202400264","DOIUrl":"https://doi.org/10.1002/aelm.202400264","url":null,"abstract":"2D semiconductors have demonstrated outstanding switching performance in resistive random-access memory (RRAM). Despite the proposed resistive switching (RS) mechanism involving the penetration of electrode metal atoms, direct observation of metal penetration in these van-der-Waals stacked 2D semiconductors remains absent. This study utilizes 2D molybdenum disulfide (MoS<sub>2</sub>) as the switching material, employing gold and multilayer graphene as electrodes. Through analysis of the switching characteristics of these RRAM devices, the pivotal role of grain boundaries and metal atoms is identify in achieving RS. High-resolution transmission electron microscopy and energy-dispersive X-ray spectroscopy provide direct evidence of metal penetration into multilayer MoS<sub>2</sub>. This study offers valuable insights into the RS mechanism in memristors based on multilayer MoS<sub>2</sub>, providing guidance for designing and optimizing 2D material memristive devices.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141251814","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In the last 15 years memristors have been investigated as devices for high-density, low-power, non-volatile, resistive random access memory (ReRAM) beyond Moore's law. They also show potential in neuromorphic logic architectures to overcome the Von–Neumann bottleneck of classical circuitry facilitating better hardware for artificial intelligence (AI) and artificial neural network (ANN) systems. Molybdenum disulfide (MoS2) has emerged as a promising material for memristor devices of monolayer thickness due to its direct bandgap, high carrier mobility and environmental stability. In this review, recent progress in the development of MoS2 memristors the current understanding of the mechanisms behind their function are examined. The remaining obstacles to a commercially viable device principle and how these may be surmounted in light of the rapid progress that has already been made are also discussed.
{"title":"Molybdenum Disulfide Memristors for Next Generation Memory and Neuromorphic Computing: Progress and Prospects","authors":"R. A. Wells, A. W. Robertson","doi":"10.1002/aelm.202400121","DOIUrl":"https://doi.org/10.1002/aelm.202400121","url":null,"abstract":"In the last 15 years memristors have been investigated as devices for high-density, low-power, non-volatile, resistive random access memory (ReRAM) beyond Moore's law. They also show potential in neuromorphic logic architectures to overcome the Von–Neumann bottleneck of classical circuitry facilitating better hardware for artificial intelligence (AI) and artificial neural network (ANN) systems. Molybdenum disulfide (MoS<sub>2</sub>) has emerged as a promising material for memristor devices of monolayer thickness due to its direct bandgap, high carrier mobility and environmental stability. In this review, recent progress in the development of MoS<sub>2</sub> memristors the current understanding of the mechanisms behind their function are examined. The remaining obstacles to a commercially viable device principle and how these may be surmounted in light of the rapid progress that has already been made are also discussed.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141246286","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Kwang Jae Lee, Yeong Jae Kim, Jung-Hong Min, Chun Hong Kang, Ram Chandra Subedi, Huafan Zhang, Latifah Al-Maghrabi, Kwangwook Park, Dante Ahn, Yusin Pak, Tien Khee Ng, Young Min Song, Boon S. Ooi, Osman M. Bakr, Jungwook Min
When implementing optoelectronic devices through the stacking of heterogeneous materials, considering the bandgap offset is crucial for achieving efficient carrier dynamics. In this study, the bandgap offset characteristics are investigated when n-type gallium nitride nanowires (n-GaN NWs) are used as electron transport layers in methylammonium lead iodide (MAPbI3)-based optoelectronic devices. n-GaN NWs are grown on indium-tin-oxide (ITO)-coated glass via the plasma-assisted molecular beam epitaxy (PA-MBE) process to form the “GaN NWs-on-glass” platform. A MAPbI3 thin film is then spin-coated on the GaN NWs-on-glass. X-ray photoelectron spectroscopy (XPS) shows that the valence and conduction band offsets in the MAPbI3/n-GaN heterostructure are 2.19 and 0.40 eV, respectively, indicating a type-II band alignment ideal for optoelectronic applications. Prototype photovoltaic devices stacking perovskite on GaN NWs-on-glass show excellent interfacial charge-transfer ability, photon recycling, and carrier extraction efficiency. As a pioneering step in exploiting the diverse potential of the GaN-on-glass, it is demonstrated that the junction characteristics of MAPbI3/n-GaN NW heterostructures can lead to a variety of optoelectronic device applications.
在通过堆叠异质材料实现光电器件时，考虑带隙偏移对于实现高效载流子动力学至关重要。本研究通过等离子体辅助分子束外延（PA-MBE）工艺，将 n 型氮化镓纳米线（n-GaN NWs）生长在涂有铟锡氧化物（ITO）的玻璃上，形成 "GaN NWs-on-glass "平台。然后在玻璃上的氮化镓氮瓦上旋涂 MAPbI3 薄膜。X 射线光电子能谱（XPS）显示，MAPbI3/n-GaN 异质结构中的价带和导带偏移分别为 2.19 和 0.40 eV，这表明其 II 型带排列非常适合光电应用。在玻璃基氮化镓氮瓦上堆叠过氧化物的光伏器件原型显示出卓越的界面电荷转移能力、光子回收和载流子萃取效率。作为开发玻璃基氮化镓各种潜能的先驱，研究表明 MAPbI3/n-GaN NW 异质结构的结特性可带来各种光电器件应用。
{"title":"Characteristics of MAPbI3 Stacked on the GaN Nanowires-On-Glass","authors":"Kwang Jae Lee, Yeong Jae Kim, Jung-Hong Min, Chun Hong Kang, Ram Chandra Subedi, Huafan Zhang, Latifah Al-Maghrabi, Kwangwook Park, Dante Ahn, Yusin Pak, Tien Khee Ng, Young Min Song, Boon S. Ooi, Osman M. Bakr, Jungwook Min","doi":"10.1002/aelm.202400095","DOIUrl":"https://doi.org/10.1002/aelm.202400095","url":null,"abstract":"When implementing optoelectronic devices through the stacking of heterogeneous materials, considering the bandgap offset is crucial for achieving efficient carrier dynamics. In this study, the bandgap offset characteristics are investigated when <i>n</i>-type gallium nitride nanowires (<i>n</i>-GaN NWs) are used as electron transport layers in methylammonium lead iodide (MAPbI<sub>3</sub>)-based optoelectronic devices. <i>n</i>-GaN NWs are grown on indium-tin-oxide (ITO)-coated glass via the plasma-assisted molecular beam epitaxy (PA-MBE) process to form the “GaN NWs-on-glass” platform. A MAPbI<sub>3</sub> thin film is then spin-coated on the GaN NWs-on-glass. X-ray photoelectron spectroscopy (XPS) shows that the valence and conduction band offsets in the MAPbI<sub>3</sub>/<i>n</i>-GaN heterostructure are 2.19 and 0.40 eV, respectively, indicating a type-II band alignment ideal for optoelectronic applications. Prototype photovoltaic devices stacking perovskite on GaN NWs-on-glass show excellent interfacial charge-transfer ability, photon recycling, and carrier extraction efficiency. As a pioneering step in exploiting the diverse potential of the GaN-on-glass, it is demonstrated that the junction characteristics of MAPbI<sub>3</sub>/<i>n</i>-GaN NW heterostructures can lead to a variety of optoelectronic device applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141177952","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mingyuan Sheng, Xi Chang, Xiaojun Mao, Yang Gao, Xiaoyang Xuan, Haifen Xie, Haichuan Mu, Yueping Niu, Shangqing Gong, Min Qian
The heterostructure of two-dimensional transition metal dichalcogenide (TMDC) has garnered extensive attention, for the junction is the building block of a semiconductor device. However, the controllable synthesis of TMDC heterostructures of different transition metals and different chalcogen elements is still challenging because of the etching by atom substitution during the chemical vapor deposition (CVD) process. Here, a Mo─O transition state with lower energy is introduced to the edge of an as-grown MoSe2 by using ultraviolet ozone treatment, to prevent the fast atom substitution of S for Se, and enable a stable growth of WS2/MoSe2 lateral heterostructure. A polymer-free transfer method is developed based on capillary interaction, and atomic structure characterization confirms the high-quality WS2/MoSe2 lateral heterostructure. The WS2/MoSe2 lateral heterostructure photodetector exhibits superior photoresponse compared to WS2 and MoSe2 devices, with a responsivity of 21.87 A W−1 and a detectivity of 4.2 × 1012 Jones at 350 nm. Kelvin probe force microscopy result reveals that the built-in electric field within the heterojunction facilitates the effective separation of photogenerated electron-hole pairs. This study carries profound implications for the CVD growth and polymer-free transfer of TMDC heterostructures in photodetector applications.
{"title":"Growth and Photoresponse of WS2/MoSe2 Lateral Heterostructure","authors":"Mingyuan Sheng, Xi Chang, Xiaojun Mao, Yang Gao, Xiaoyang Xuan, Haifen Xie, Haichuan Mu, Yueping Niu, Shangqing Gong, Min Qian","doi":"10.1002/aelm.202300842","DOIUrl":"https://doi.org/10.1002/aelm.202300842","url":null,"abstract":"The heterostructure of two-dimensional transition metal dichalcogenide (TMDC) has garnered extensive attention, for the junction is the building block of a semiconductor device. However, the controllable synthesis of TMDC heterostructures of different transition metals and different chalcogen elements is still challenging because of the etching by atom substitution during the chemical vapor deposition (CVD) process. Here, a Mo─O transition state with lower energy is introduced to the edge of an as-grown MoSe<sub>2</sub> by using ultraviolet ozone treatment, to prevent the fast atom substitution of S for Se, and enable a stable growth of WS<sub>2</sub>/MoSe<sub>2</sub> lateral heterostructure. A polymer-free transfer method is developed based on capillary interaction, and atomic structure characterization confirms the high-quality WS<sub>2</sub>/MoSe<sub>2</sub> lateral heterostructure. The WS<sub>2</sub>/MoSe<sub>2</sub> lateral heterostructure photodetector exhibits superior photoresponse compared to WS<sub>2</sub> and MoSe<sub>2</sub> devices, with a responsivity of 21.87 A W<sup>−1</sup> and a detectivity of 4.2 × 10<sup>12</sup> Jones at 350 nm. Kelvin probe force microscopy result reveals that the built-in electric field within the heterojunction facilitates the effective separation of photogenerated electron-hole pairs. This study carries profound implications for the CVD growth and polymer-free transfer of TMDC heterostructures in photodetector applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141177975","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Memristor, with the ability of analog computing, is widely investigated for improving the computing efficiency of deep neural networks (DNNs) deployment. However, how to fully take advantage of the analog computing ability of memristive computing system (MCS) for DNN deployment is still an open question. Here, a new neural network models deployment scheme, that is, an information dimension matching (IDM) scheme, is proposed to fully take advantage of the analog computing ability of MCS. Furthermore, the spatial and temporal DNN, that is convolutional neural network (CNN) and recurrent neural network (RNN) is used to verify the proposed deployment scheme, respectively. The experimental results indicate that, compared to the traditional deployment schemes, the proposed deployment scheme shows obvious inference accuracy and energy efficiency improvement (>4 × in four‐layer DNNs deployment), and the energy efficiency improvement increases dramatically with the layers increment of DNNs. This work paves the path for developing high computing efficiency analog MCS.
{"title":"Information Dimension Matching in Memristive Computing System for Analog Deployment of Deep Neural Networks","authors":"Zhe Feng, Zuheng Wu, Xu Wang, Xiuquan Fang, Xumeng Zhang, Jianxun Zou, Jian Lu, Wenbin Guo, Xing Li, Tuo Shi, Zuyu Xu, Yunlai Zhu, Fei Yang, Yuehua Dai, Qi Liu","doi":"10.1002/aelm.202400106","DOIUrl":"https://doi.org/10.1002/aelm.202400106","url":null,"abstract":"Memristor, with the ability of analog computing, is widely investigated for improving the computing efficiency of deep neural networks (DNNs) deployment. However, how to fully take advantage of the analog computing ability of memristive computing system (MCS) for DNN deployment is still an open question. Here, a new neural network models deployment scheme, that is, an information dimension matching (IDM) scheme, is proposed to fully take advantage of the analog computing ability of MCS. Furthermore, the spatial and temporal DNN, that is convolutional neural network (CNN) and recurrent neural network (RNN) is used to verify the proposed deployment scheme, respectively. The experimental results indicate that, compared to the traditional deployment schemes, the proposed deployment scheme shows obvious inference accuracy and energy efficiency improvement (>4 × in four‐layer DNNs deployment), and the energy efficiency improvement increases dramatically with the layers increment of DNNs. This work paves the path for developing high computing efficiency analog MCS.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141177422","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yunwoo Shin, Juhee Jeon, Kyoungah Cho, Sangsig Kim
This study presents a binarized neural network (BNN) comprising quasi‐nonvolatile memory (QNVM) devices that operate in a positive feedback loop mechanism and exhibit an extremely low subthreshold swing (≤ 5 mV dec−1) and a high on/off ratio (≥ 107). A pair of QNVM devices are used for a single synaptic cell in a cell array, in which its memory state represents the synaptic weight, and the voltages applied to the pair act as input in a complementary fashion. The array of synaptic cells performs matrix multiply‐accumulate (MAC) operations between the weight matrix and input vector using XNOR and current summation. All the results of the MAC operations and vector‐matrix multiplications are equivalent. Moreover, the BNN features a high accuracy of 93.32% in the MNIST image recognition simulation owing to high device uniformity (1.35%), which demonstrates the feasibility of compact and high‐performance neuromorphic computing.
{"title":"Binarized Neural Network Comprising Quasi‐Nonvolatile Memory Devices for Neuromorphic Computing","authors":"Yunwoo Shin, Juhee Jeon, Kyoungah Cho, Sangsig Kim","doi":"10.1002/aelm.202400061","DOIUrl":"https://doi.org/10.1002/aelm.202400061","url":null,"abstract":"This study presents a binarized neural network (BNN) comprising quasi‐nonvolatile memory (QNVM) devices that operate in a positive feedback loop mechanism and exhibit an extremely low subthreshold swing (≤ 5 mV dec<jats:sup>−1</jats:sup>) and a high on/off ratio (≥ 10<jats:sup>7</jats:sup>). A pair of QNVM devices are used for a single synaptic cell in a cell array, in which its memory state represents the synaptic weight, and the voltages applied to the pair act as input in a complementary fashion. The array of synaptic cells performs matrix multiply‐accumulate (MAC) operations between the weight matrix and input vector using XNOR and current summation. All the results of the MAC operations and vector‐matrix multiplications are equivalent. Moreover, the BNN features a high accuracy of 93.32% in the MNIST image recognition simulation owing to high device uniformity (1.35%), which demonstrates the feasibility of compact and high‐performance neuromorphic computing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141177321","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Andrzej Sławek, Lulu Alluhaibi, Ewelina Kowalewska, Gisya Abdi, Tomasz Mazur, Agnieszka Podborska, Krzysztof Mech, Marianna Marciszko-Wiąckowska, Alexey Maximenko, Konrad Szaciłowski
In this work, a family of Ni-based dibenzotetraaza[14]annulene (dtaa) complexes are investigated for their application in memristors (memory resistors). A series of four Ni(II) complexes with different peripheral substituents of the dtaa ligand are successfully synthesized. Based on these compounds, two-terminal thin-film devices are fabricated in planar architecture. Four metals with different work functions are tested: Mg, Cu, Ni, and Au. It is demonstrated that ITO|[Ni(Me4dtaa)]|Cu devices show hysteretic behavior and offer stable, robust, and reproducible switching between high- and low-resistive states. An in-depth spectroscopic characterization of the Ni complex is performed, using radiation from infrared, through visible and ultraviolet, to tender X-rays. Operando X-ray fluorescence spectroscopy is used to monitor redox and structural changes upon the polarization of the studied memristor with the external electric field. Density functional theory calculations are used to better understand the electronic structure of the studied material, as well as structural rearrangement after electron injection that may be responsible for the modulation of electric conductivity. Finding a unique case of filamentary-type resistive switching involving redox reactions of stationary molecules within a molecular solid is postulated. Yet, the formation of these filaments is not related to any significant configurational changes at the atomic scale.
本文研究了镍基二苯并四氮杂[14]萘（dtaa）配合物家族在忆阻器（记忆电阻器）中的应用。我们成功合成了四种具有不同外围取代基 dtaa 配体的 Ni(II) 复合物系列。在这些化合物的基础上，制造出了平面结构的两端薄膜器件。测试了四种具有不同功函数的金属：镁、铜、镍和金。实验证明，ITO|[Ni(Me4dtaa)]|Cu 器件显示出滞后行为，并能在高阻态和低阻态之间进行稳定、稳健和可重现的切换。利用从红外线、可见光、紫外线到微弱 X 射线的辐射，对 Ni 复合物进行了深入的光谱表征。操作性 X 射线荧光光谱用于监测所研究的忆阻器在外部电场极化时的氧化还原和结构变化。密度泛函理论计算用于更好地理解所研究材料的电子结构，以及电子注入后可能导致电导率调节的结构重排。研究假设找到了一个独特的丝状电阻开关案例，其中涉及分子固体中静止分子的氧化还原反应。然而，这些丝状物的形成与原子尺度上任何显著的构型变化无关。
{"title":"Memristors Based on Ni(II)-tetraaza[14]annulene Complexes: Toward an Unconventional Resistive Switching Mechanism","authors":"Andrzej Sławek, Lulu Alluhaibi, Ewelina Kowalewska, Gisya Abdi, Tomasz Mazur, Agnieszka Podborska, Krzysztof Mech, Marianna Marciszko-Wiąckowska, Alexey Maximenko, Konrad Szaciłowski","doi":"10.1002/aelm.202300818","DOIUrl":"https://doi.org/10.1002/aelm.202300818","url":null,"abstract":"In this work, a family of Ni-based dibenzotetraaza[14]annulene (dtaa) complexes are investigated for their application in memristors (memory resistors). A series of four Ni(II) complexes with different peripheral substituents of the dtaa ligand are successfully synthesized. Based on these compounds, two-terminal thin-film devices are fabricated in planar architecture. Four metals with different work functions are tested: Mg, Cu, Ni, and Au. It is demonstrated that ITO|[Ni(Me<sub>4</sub>dtaa)]|Cu devices show hysteretic behavior and offer stable, robust, and reproducible switching between high- and low-resistive states. An in-depth spectroscopic characterization of the Ni complex is performed, using radiation from infrared, through visible and ultraviolet, to tender X-rays. Operando X-ray fluorescence spectroscopy is used to monitor redox and structural changes upon the polarization of the studied memristor with the external electric field. Density functional theory calculations are used to better understand the electronic structure of the studied material, as well as structural rearrangement after electron injection that may be responsible for the modulation of electric conductivity. Finding a unique case of filamentary-type resistive switching involving redox reactions of stationary molecules within a molecular solid is postulated. Yet, the formation of these filaments is not related to any significant configurational changes at the atomic scale.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141159722","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Memristors are a candidate device for artificial neural systems due to their excellent conductance-regulation ability and potential to simulate the characteristics of biological synapses. This study fabricated a Pt/TaOx/TiOy/Ti analog artificial synapse memristor that exhibits excellent multilevel storage property with a large on/off ratio of ≈660 times. The dynamic resistive switching mechanism is well expounded and validated by the reset stopping voltage dependent Schottky fitting results. Moreover, the essential biological synaptic characteristics such as long-term potentiation/depression (LTP/D) and paired-pulse facilitation (PPF) are successfully mimicked with a low pulse energy consumption of 12.69 nJ. A neuromorphic network constructed on the enhanced symmetry and linearity of conductance for this Pt/TaOx/TiOy/Ti memristive device can achieve 92.45% accuracy in recognizing handwritten pattern. These results demonstrate a significant potential for application Pt/TaOx/TiOy/Ti memristor in non-volatile memory and bioinspired neuromorphic systems.
{"title":"A TaOx/TiOy Bilayer Memristor with Enhanced Synaptic Features for Neuromorphic Computing","authors":"Mingmin Zhu, Zhendi Yu, Gao Hu, Kai Yu, Yulong Jiang, Jiawei Wang, Wenjing Dong, Jinming Guo, Yang Qiu, Guoliang Yu, Hao-Miao Zhou","doi":"10.1002/aelm.202400008","DOIUrl":"https://doi.org/10.1002/aelm.202400008","url":null,"abstract":"Memristors are a candidate device for artificial neural systems due to their excellent conductance-regulation ability and potential to simulate the characteristics of biological synapses. This study fabricated a Pt/TaO<sub>x</sub>/TiO<sub>y</sub>/Ti analog artificial synapse memristor that exhibits excellent multilevel storage property with a large on/off ratio of ≈660 times. The dynamic resistive switching mechanism is well expounded and validated by the reset stopping voltage dependent Schottky fitting results. Moreover, the essential biological synaptic characteristics such as long-term potentiation/depression (LTP/D) and paired-pulse facilitation (PPF) are successfully mimicked with a low pulse energy consumption of 12.69 nJ. A neuromorphic network constructed on the enhanced symmetry and linearity of conductance for this Pt/TaO<sub>x</sub>/TiO<sub>y</sub>/Ti memristive device can achieve 92.45% accuracy in recognizing handwritten pattern. These results demonstrate a significant potential for application Pt/TaO<sub>x</sub>/TiO<sub>y</sub>/Ti memristor in non-volatile memory and bioinspired neuromorphic systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141156581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zuzanna Molenda, Sylvain Chambon, Dario M. Bassani, Lionel Hirsch
The popularity of metal halide perovskites is in part the result of their versatility in numerous applications. To date, perovskites are used in their intrinsic, undoped form, as the doping of these materials is not yet adequately mastered. Herein, the recently reported electronic doping of CH3NH3PbI3 is employed to fabricate perovskite solar cells in which the interfacial electron transport layer (ETL) is replaced by n-doping of one side of the perovskite film. The doping involves the incorporation of metastable Sm2+ ions that undergo an in situ oxidation to Sm3+, releasing electrons to the conduction band to render the perovskite n-type. In spite of the lack of an ETL, these solar cells have the same efficiency as the samples with the ETL. The open circuit voltage of the doped solar cells increases proportionally to the doping concentration due to the narrowing of the depletion layer thickness at the interface of the perovskite and the top electrode, reaching the value of ≈1 V for the doped ETL-free device, the same as for the reference sample. These proof-of-concept results represent the first step toward perovskite-based devices incorporating a p-n homojunction.
金属卤化物类包晶石之所以广受欢迎，部分原因在于其在众多应用领域的多样性。迄今为止，由于尚未充分掌握这些材料的掺杂技术，因此均以其固有的、未掺杂的形式使用。在本文中，最近报道的 CH3NH3PbI3 电子掺杂被用于制造过氧化物太阳能电池，在这种电池中，过氧化物薄膜的一侧通过 n 掺杂取代了界面电子传输层 (ETL)。这种掺杂涉及掺入可蜕变的 Sm2+ 离子，这些离子在原位氧化成 Sm3+，将电子释放到导带，从而使包晶石成为 n 型。尽管没有 ETL，但这些太阳能电池的效率与带有 ETL 的样品相同。掺杂太阳能电池的开路电压随着掺杂浓度的增加而成正比增加，这是由于包晶和顶部电极界面上的耗尽层厚度变窄所致，无掺杂 ETL 器件的开路电压值≈1 V，与参考样品相同。这些概念验证结果标志着向基于包晶石的 p-n 同结器件迈出了第一步。
{"title":"Electronic Doping in Perovskite Solar Cells","authors":"Zuzanna Molenda, Sylvain Chambon, Dario M. Bassani, Lionel Hirsch","doi":"10.1002/aelm.202400090","DOIUrl":"https://doi.org/10.1002/aelm.202400090","url":null,"abstract":"The popularity of metal halide perovskites is in part the result of their versatility in numerous applications. To date, perovskites are used in their intrinsic, undoped form, as the doping of these materials is not yet adequately mastered. Herein, the recently reported electronic doping of CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> is employed to fabricate perovskite solar cells in which the interfacial electron transport layer (ETL) is replaced by n-doping of one side of the perovskite film. The doping involves the incorporation of metastable Sm<sup>2+</sup> ions that undergo an in situ oxidation to Sm<sup>3+</sup>, releasing electrons to the conduction band to render the perovskite n-type. In spite of the lack of an ETL, these solar cells have the same efficiency as the samples with the ETL. The open circuit voltage of the doped solar cells increases proportionally to the doping concentration due to the narrowing of the depletion layer thickness at the interface of the perovskite and the top electrode, reaching the value of ≈1 V for the doped ETL-free device, the same as for the reference sample. These proof-of-concept results represent the first step toward perovskite-based devices incorporating a p-n homojunction.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141156563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Laixiang Qin, He Tian, Chunlai Li, Ziang Xie, Yiqun Wei, Yi Li, Jin He, Yutao Yue, Tian‐Ling Ren
With field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance degradation originates from short channel effects (SCEs) degradation and power consumption increment attributed to inhibition of supply voltage (VDD) scaling down proportionally caused by thermionic limit subthreshold swing (SS) (60 mV dec−1) pose substantial challenges for today's semiconductor industry. To further sustain the Moore's law life, incorporation of new device concepts or new materials are imperative. 2D materials are predicted to be able to combat SCEs by virtue of high carrier mobility maintainability regardless of thickness thinning down, dangling bonds free surface and atomic thickness, which contributes to super gate electrostatic controllability. To overcome increasing power dissipation problem, new device structures including negative capacitance FET (NCFET), tunnel FET (TFET), dirac source FET (DSFET) and the like, which show superiority in decreasing VDD by lowering SS below thermionic limit of 60 mV dec−1 have been brought out. The combination of 2D materials and ultralow steep slope device structures holds great promise for low power‐dissipation electronics, which encompass both suppressed SCEs and reduced VDD simultaneously, leading to improved device performance and lowered power dissipation.
{"title":"Steep Slope Field Effect Transistors Based on 2D Materials","authors":"Laixiang Qin, He Tian, Chunlai Li, Ziang Xie, Yiqun Wei, Yi Li, Jin He, Yutao Yue, Tian‐Ling Ren","doi":"10.1002/aelm.202300625","DOIUrl":"https://doi.org/10.1002/aelm.202300625","url":null,"abstract":"With field effect transistor (FET) sustained to downscale to sub‐10 nm nodes, performance degradation originates from short channel effects (SCEs) degradation and power consumption increment attributed to inhibition of supply voltage (VDD) scaling down proportionally caused by thermionic limit subthreshold swing (SS) (60 mV dec<jats:sup>−1</jats:sup>) pose substantial challenges for today's semiconductor industry. To further sustain the Moore's law life, incorporation of new device concepts or new materials are imperative. 2D materials are predicted to be able to combat SCEs by virtue of high carrier mobility maintainability regardless of thickness thinning down, dangling bonds free surface and atomic thickness, which contributes to super gate electrostatic controllability. To overcome increasing power dissipation problem, new device structures including negative capacitance FET (NCFET), tunnel FET (TFET), dirac source FET (DSFET) and the like, which show superiority in decreasing VDD by lowering SS below thermionic limit of 60 mV dec<jats:sup>−1</jats:sup> have been brought out. The combination of 2D materials and ultralow steep slope device structures holds great promise for low power‐dissipation electronics, which encompass both suppressed SCEs and reduced VDD simultaneously, leading to improved device performance and lowered power dissipation.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141098025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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