David Lehninger, Franz Müller, Yannick Raffel, Shouzhuo Yang, Markus Neuber, Sukhrob Abdulazhanov, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer
The discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies. Ferroelectric memories, such as Ferroelectric Random Access Memories (FeRAM) and the Ferroelectric Field Effect Transistor (FeFET), combine non-volatility with high-speed operation and low power consumption, though they contend with specific challenges, including variability and endurance limitations. Meanwhile, piezoelectric and pyroelectric sensors/actuators exploit the capability of ferroelectric materials to interconvert mechanical or thermal energy with electrical signals. These sensors demonstrate exceptional sensitivity, though factors such as material fatigue and temperature stability can impact their performance. Additionally, radio frequency devices, particularly varactors, utilize ferroelectric materials to enable tunable capacitance, enhancing dynamic control. This review assesses the advantages and current challenges across these technologies, offering insights into prospective solutions.
{"title":"Ferroelectric Hafnium Oxide: A Potential Game-Changer for Nanoelectronic Devices and Systems","authors":"David Lehninger, Franz Müller, Yannick Raffel, Shouzhuo Yang, Markus Neuber, Sukhrob Abdulazhanov, Thomas Kämpfe, Konrad Seidel, Maximilian Lederer","doi":"10.1002/aelm.202400686","DOIUrl":"https://doi.org/10.1002/aelm.202400686","url":null,"abstract":"The discovery of ferroelectricity in hafnium oxide has propelled ferroelectric devices to the forefront of nanoelectronics, offering distinct advantages over alternative technologies. Ferroelectric memories, such as Ferroelectric Random Access Memories (FeRAM) and the Ferroelectric Field Effect Transistor (FeFET), combine non-volatility with high-speed operation and low power consumption, though they contend with specific challenges, including variability and endurance limitations. Meanwhile, piezoelectric and pyroelectric sensors/actuators exploit the capability of ferroelectric materials to interconvert mechanical or thermal energy with electrical signals. These sensors demonstrate exceptional sensitivity, though factors such as material fatigue and temperature stability can impact their performance. Additionally, radio frequency devices, particularly varactors, utilize ferroelectric materials to enable tunable capacitance, enhancing dynamic control. This review assesses the advantages and current challenges across these technologies, offering insights into prospective solutions.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"51 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143517899","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Choong Yeon Kim, Juhyun Lee, Eun Young Jeong, Yeji Jang, Heesoo Kim, Bohyung Choi, Donggi Han, Youngjun Oh, Jae-Woong Jeong
Wireless technologies have profoundly transformed wearable electronics, advancing them from early, wired designs to untethered devices that seamlessly integrate into daily life. The adoption of wireless solutions has unlocked new possibilities, allowing for real-time remote monitoring, enhanced comfort, and greater versatility across diverse settings. These advancements expand the applications of wearable electronics from activity tracking and health monitoring to rehabilitation, human–machine interfaces, and immersive virtual and augmented reality. However, the shift to wireless wearable electronics introduces unique challenges. Unlike traditional tethered systems, wireless wearable electronics must carefully balance power efficiency, communication stability, and user convenience without relying on wired connections. This review examines the recent advancements and challenges in implementing wireless wearable electronics, with a focus on wireless communication and power solutions. It begins by discussing key design considerations for achieving reliable wireless functionality in wearable electronics. Subsequently, it explores wireless communication technologies, ranging from short-range protocols to long-range networks, as well as powering methods, including integrated power sources and energy harvesting technologies. Their diverse applications, particularly in healthcare and interactive systems, are also discussed. Finally, the review highlights major challenges and outlines potential future directions to drive the development of the next generation of wireless wearable electronics.
{"title":"Wireless Technologies for Wearable Electronics: A Review","authors":"Choong Yeon Kim, Juhyun Lee, Eun Young Jeong, Yeji Jang, Heesoo Kim, Bohyung Choi, Donggi Han, Youngjun Oh, Jae-Woong Jeong","doi":"10.1002/aelm.202400884","DOIUrl":"https://doi.org/10.1002/aelm.202400884","url":null,"abstract":"Wireless technologies have profoundly transformed wearable electronics, advancing them from early, wired designs to untethered devices that seamlessly integrate into daily life. The adoption of wireless solutions has unlocked new possibilities, allowing for real-time remote monitoring, enhanced comfort, and greater versatility across diverse settings. These advancements expand the applications of wearable electronics from activity tracking and health monitoring to rehabilitation, human–machine interfaces, and immersive virtual and augmented reality. However, the shift to wireless wearable electronics introduces unique challenges. Unlike traditional tethered systems, wireless wearable electronics must carefully balance power efficiency, communication stability, and user convenience without relying on wired connections. This review examines the recent advancements and challenges in implementing wireless wearable electronics, with a focus on wireless communication and power solutions. It begins by discussing key design considerations for achieving reliable wireless functionality in wearable electronics. Subsequently, it explores wireless communication technologies, ranging from short-range protocols to long-range networks, as well as powering methods, including integrated power sources and energy harvesting technologies. Their diverse applications, particularly in healthcare and interactive systems, are also discussed. Finally, the review highlights major challenges and outlines potential future directions to drive the development of the next generation of wireless wearable electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"7 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143517897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Zijian Feng, Jiyun Kim, Jie Min, Peiyuan Guan, Shuo Zhang, Xinwei Guan, Tingting Mei, Tianxu Huang, Chun-Ho Lin, Long Hu, Fandi Chen, Zhi Li, Jiabao Yi, Tom Wu, Dewei Chu
Non-volatile memories are expected to revolutionize a wide range of information technologies, but their manufacturing cost is one of the top concerns researchers must address. This study presents a 1D lead-free halide perovskite K2CuBr3, as a novel material candidate for the resistive switching (RS) devices, which features only earth-abundant elements, K, Cu, and Br. To the knowledge, this material is the first low-dimensional halide perovskite with exceptionally low production costs and minimal environmental impact. Owing to the unique 1D carrier transport along the Cu─Br networks, the K2CuBr3 RS device exhibits excellent bipolar switching behavior, with an On/Off window of 105 and a retention time of over 1000 s. The K2CuBr3 RS devices can also act as artificial synapses to transmit various forms of synaptic plasticities, and their integration into a perceptron artificial neural network can deliver a high algorithm accuracy of 93% for image recognition. Overall, this study underscores the promising attributes of K2CuBr3 for the future development of memory storage and neuromorphic computing, leveraging its distinct material properties and economic benefits.
{"title":"Harnessing Earth-Abundant Lead-Free Halide Perovskite for Resistive Switching Memory and Neuromorphic Computing","authors":"Zijian Feng, Jiyun Kim, Jie Min, Peiyuan Guan, Shuo Zhang, Xinwei Guan, Tingting Mei, Tianxu Huang, Chun-Ho Lin, Long Hu, Fandi Chen, Zhi Li, Jiabao Yi, Tom Wu, Dewei Chu","doi":"10.1002/aelm.202400804","DOIUrl":"https://doi.org/10.1002/aelm.202400804","url":null,"abstract":"Non-volatile memories are expected to revolutionize a wide range of information technologies, but their manufacturing cost is one of the top concerns researchers must address. This study presents a 1D lead-free halide perovskite K<sub>2</sub>CuBr<sub>3</sub>, as a novel material candidate for the resistive switching (RS) devices, which features only earth-abundant elements, K, Cu, and Br. To the knowledge, this material is the first low-dimensional halide perovskite with exceptionally low production costs and minimal environmental impact. Owing to the unique 1D carrier transport along the Cu─Br networks, the K<sub>2</sub>CuBr<sub>3</sub> RS device exhibits excellent bipolar switching behavior, with an On/Off window of 10<sup>5</sup> and a retention time of over 1000 s. The K<sub>2</sub>CuBr<sub>3</sub> RS devices can also act as artificial synapses to transmit various forms of synaptic plasticities, and their integration into a perceptron artificial neural network can deliver a high algorithm accuracy of 93% for image recognition. Overall, this study underscores the promising attributes of K<sub>2</sub>CuBr<sub>3</sub> for the future development of memory storage and neuromorphic computing, leveraging its distinct material properties and economic benefits.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"29 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143495428","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mohammad Abrar Uddin, Myeongju Lim, Rubiga Kim, Barrett London Burgess, Ken Roberts, Junghyun Kim, Taeil Kim
Triboelectric nanogenerators (TENGs) offer a promising solution for energy harvesting in wearable devices and sensors. However, their energy output is dependent on process parameters and should be optimized to maximize performance. Due to the absence of effective analytical models for TENG systems, the complex relationship among these variables and the effect of these variables cannot be easily boiled down into a conventional theoretical framework. To address this problem, this study takes four process parameters such as thickness, pore ratio, applied force, and frequency into account and leverages advanced design methods (e.g., Design of Experiment) and machine learning‐based regression models to systematically explore the design space. A contact‐separation TENG has been designed that includes a tribonegative porous layer of graphene nanoplatelets (GNP) dispersed into polydimethylsiloxane (PDMS) matrix and aluminum as the tribopositive material. Several experiments are conducted to train a support vector regressor (SVR) model, validate the predicted performance, and refine the design that can be further used to obtain an optimized TENG design.
{"title":"Machine Learning‐Driven Surrogate Modeling for Optimization of Triboelectric Nanogenerator Design Parameters","authors":"Mohammad Abrar Uddin, Myeongju Lim, Rubiga Kim, Barrett London Burgess, Ken Roberts, Junghyun Kim, Taeil Kim","doi":"10.1002/aelm.202400771","DOIUrl":"https://doi.org/10.1002/aelm.202400771","url":null,"abstract":"Triboelectric nanogenerators (TENGs) offer a promising solution for energy harvesting in wearable devices and sensors. However, their energy output is dependent on process parameters and should be optimized to maximize performance. Due to the absence of effective analytical models for TENG systems, the complex relationship among these variables and the effect of these variables cannot be easily boiled down into a conventional theoretical framework. To address this problem, this study takes four process parameters such as thickness, pore ratio, applied force, and frequency into account and leverages advanced design methods (e.g., Design of Experiment) and machine learning‐based regression models to systematically explore the design space. A contact‐separation TENG has been designed that includes a tribonegative porous layer of graphene nanoplatelets (GNP) dispersed into polydimethylsiloxane (PDMS) matrix and aluminum as the tribopositive material. Several experiments are conducted to train a support vector regressor (SVR) model, validate the predicted performance, and refine the design that can be further used to obtain an optimized TENG design.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"49 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143473406","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Along with continuous size shrinking, conventional silicon based transistors face the the challenges of both manufacture complexity and physical limitations. The negative capacitance transistors (NC‐FETs) using 2D ferroelectric materials as dielectric insulators are emerging as reliable solutions owing to their advantages of breaking the Boltzmann limitation and Complementary Metal‐Oxide Semiconductor (CMOS) compatibility. Here, the room temperature ferroelectricity of 2D AgInP2Se6 is discovered which is further integrated with MoS2 channel into ultra‐steep NC‐FETs for low‐power electronic applications. Due to the negative capacitance effect of AgInP2Se6 during the polarization reversal process, the transistor breaks the Boltzmann limitation with a subthreshold swing (SS) of less than 10 mV decade−1. By optimizing the thickness of AgInP2Se6, superior transistor performance with a minimum SS of 7.75 mV dec−1 and a high on/off ratio of up to 5.88 × 104 can be achieved. This work develops a new 2D ferroelectric AgInP2Se6 with room temperature ferroelectricity, providing promising material platforms for small‐size, ultra‐steep, and low‐power electronics.
{"title":"2D ferroelectric AgInP2Se6 for Ultra‐Steep Slope Transistor with SS Below 10 mV Decade−1","authors":"Yujue Yang, Zihao Liu, Xueting Liu, Huafeng Dong, Xin Zhang, Juehan Yang, Fugen Wu, Jingbo Li, Nengjie Huo","doi":"10.1002/aelm.202400685","DOIUrl":"https://doi.org/10.1002/aelm.202400685","url":null,"abstract":"Along with continuous size shrinking, conventional silicon based transistors face the the challenges of both manufacture complexity and physical limitations. The negative capacitance transistors (NC‐FETs) using 2D ferroelectric materials as dielectric insulators are emerging as reliable solutions owing to their advantages of breaking the Boltzmann limitation and Complementary Metal‐Oxide Semiconductor (CMOS) compatibility. Here, the room temperature ferroelectricity of 2D AgInP<jats:sub>2</jats:sub>Se<jats:sub>6</jats:sub> is discovered which is further integrated with MoS<jats:sub>2</jats:sub> channel into ultra‐steep NC‐FETs for low‐power electronic applications. Due to the negative capacitance effect of AgInP<jats:sub>2</jats:sub>Se<jats:sub>6</jats:sub> during the polarization reversal process, the transistor breaks the Boltzmann limitation with a subthreshold swing (SS) of less than 10 mV decade<jats:sup>−1</jats:sup>. By optimizing the thickness of AgInP<jats:sub>2</jats:sub>Se<jats:sub>6</jats:sub>, superior transistor performance with a minimum SS of 7.75 mV dec<jats:sup>−1</jats:sup> and a high on/off ratio of up to 5.88 × 10<jats:sup>4</jats:sup> can be achieved. This work develops a new 2D ferroelectric AgInP<jats:sub>2</jats:sub>Se<jats:sub>6</jats:sub> with room temperature ferroelectricity, providing promising material platforms for small‐size, ultra‐steep, and low‐power electronics.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"81 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143473407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Rare‐earth iron garnets (RIG, R3Fe5O12) are insulating ferrimagnets with high inversion symmetry because of their centrosymmetric cubic crystal structure. However, this high centrosymmetry can be reduced by introducing a non‐uniform strain, leading to a tetragonally distorted lattice structure. In this study, the strain‐induced lattice distortions and symmetry‐breaking features are investigated in compressively strained Sm3Fe5O12 and tensile‐strained Lu3Fe5O12 thin films around critical thicknesses. Experiments indicate that tensile strain prevents the in‐plane epitaxy from relaxing, whereas compressive strain leads to easy relaxation after reaching a critical threshold triggered by misfit dislocations. A non‐zero orbital moment, a more than tenfold increase in coercivity, and an increase in Gilbert damping near the critical thickness indicate a reduction of spatial inversion symmetry without forming any misfit dislocations. It is speculated that strain energy in uniformly strained epitaxial thin films has been partially released when the thickness reached about the critical thickness. The proposed strain‐mediated reduction of centrosymmetry may pave the way to achieve controllable magneto‐dynamics in dislocation‐free tensile strained RIG thin films.
{"title":"Strain‐Induced Reduction of Centrosymmetry in Rare‐Earth Iron Garnet Thin Films","authors":"EMK Ikball Ahamed, Hiroyasu Yamahara, Md Shamim Sarker, Haining Li, Kazuo Morikawa, Kohei Yamagami, Masaki Kobayashi, Munetoshi Seki, Hitoshi Tabata","doi":"10.1002/aelm.202400735","DOIUrl":"https://doi.org/10.1002/aelm.202400735","url":null,"abstract":"Rare‐earth iron garnets (RIG, R<jats:sub>3</jats:sub>Fe<jats:sub>5</jats:sub>O<jats:sub>12</jats:sub>) are insulating ferrimagnets with high inversion symmetry because of their centrosymmetric cubic crystal structure. However, this high centrosymmetry can be reduced by introducing a non‐uniform strain, leading to a tetragonally distorted lattice structure. In this study, the strain‐induced lattice distortions and symmetry‐breaking features are investigated in compressively strained Sm<jats:sub>3</jats:sub>Fe<jats:sub>5</jats:sub>O<jats:sub>12</jats:sub> and tensile‐strained Lu<jats:sub>3</jats:sub>Fe<jats:sub>5</jats:sub>O<jats:sub>12</jats:sub> thin films around critical thicknesses. Experiments indicate that tensile strain prevents the in‐plane epitaxy from relaxing, whereas compressive strain leads to easy relaxation after reaching a critical threshold triggered by misfit dislocations. A non‐zero orbital moment, a more than tenfold increase in coercivity, and an increase in Gilbert damping near the critical thickness indicate a reduction of spatial inversion symmetry without forming any misfit dislocations. It is speculated that strain energy in uniformly strained epitaxial thin films has been partially released when the thickness reached about the critical thickness. The proposed strain‐mediated reduction of centrosymmetry may pave the way to achieve controllable magneto‐dynamics in dislocation‐free tensile strained RIG thin films.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"50 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143473408","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This study highlights the potential of Automated Machine Learning (AutoML) to improve and accelerate the optimization and synthesis processes and facilitate the discovery of materials. Using a Density Functional Theory (DFT)‐simulated dataset of monolayer MXene‐based electrodes, AutoML assesses 20 regression models to predict key electrochemical and structural properties, including intercalation voltage, theoretical capacity, and lattice parameters. The CatBoost regressor achieves R2 values of 0.81 for intercalation voltage, 0.995 for theoretical capacity as well as 0.807 and 0.997 for intercalated and non‐intercalated in‐plane lattice constants, respectively. Feature importance analyses reveal essential structure‐property relationships, improving model interpretability. AutoML's classification module also bolsters inverse material design, effectively identifying promising compositions, such as Mg2+‐intercalated and oxygen‐terminated ScC2 MXenes, for high‐capacity and high‐voltage energy storage applications. This approach diminishes reliance on computational expertise by automating model selection, hyperparameter tuning, and performance evaluation. While MXene‐based electrodes serve as a demonstrative system, the methodology and workflow can extend to other material systems, including perovskites and conductive polymers. Future efforts should prioritize integrating AutoML with real‐time experimental feedback and hybrid simulation frameworks to create adaptive systems. These systems can iteratively refine predictions and optimize trade‐offs among critical metrics like capacity, stability, and charge/discharge rates, driving advancements in energy storage and other material applications.
{"title":"Toward High‐Performance Electrochemical Energy Storage Systems: A Case Study on Predicting Electrochemical Properties and Inverse Material Design of MXene‐Based Electrode Materials with Automated Machine Learning (AutoML)","authors":"Berna Alemdag, Görkem Saygili, Matthias Franzreb, Gözde Kabay","doi":"10.1002/aelm.202400818","DOIUrl":"https://doi.org/10.1002/aelm.202400818","url":null,"abstract":"This study highlights the potential of Automated Machine Learning (AutoML) to improve and accelerate the optimization and synthesis processes and facilitate the discovery of materials. Using a Density Functional Theory (DFT)‐simulated dataset of monolayer MXene‐based electrodes, AutoML assesses 20 regression models to predict key electrochemical and structural properties, including intercalation voltage, theoretical capacity, and lattice parameters. The CatBoost regressor achieves R<jats:sup>2</jats:sup> values of 0.81 for intercalation voltage, 0.995 for theoretical capacity as well as 0.807 and 0.997 for intercalated and non‐intercalated in‐plane lattice constants, respectively. Feature importance analyses reveal essential structure‐property relationships, improving model interpretability. AutoML's classification module also bolsters inverse material design, effectively identifying promising compositions, such as Mg<jats:sup>2+</jats:sup>‐intercalated and oxygen‐terminated ScC<jats:sub>2</jats:sub> MXenes, for high‐capacity and high‐voltage energy storage applications. This approach diminishes reliance on computational expertise by automating model selection, hyperparameter tuning, and performance evaluation. While MXene‐based electrodes serve as a demonstrative system, the methodology and workflow can extend to other material systems, including perovskites and conductive polymers. Future efforts should prioritize integrating AutoML with real‐time experimental feedback and hybrid simulation frameworks to create adaptive systems. These systems can iteratively refine predictions and optimize trade‐offs among critical metrics like capacity, stability, and charge/discharge rates, driving advancements in energy storage and other material applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"25 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143473404","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Setareh Kazemzadeh, Tim Stevens, Yoeri van de Burgt
Analog non-volatile memory devices, such as electrochemical random-access memory (ECRAM), have emerged as a promising platform for in-memory computing, facilitating efficient data processing. In this research, a pioneering approach is presented by introducing an all-organic and fully integrated crossbar array comprising 3 × 3 ECRAM devices, notable for its facile fabrication employing photolithography techniques and exclusive utilization of organic materials for the devices and resistors. The crossbar array demonstrates remarkable capabilities, enabling inference and in situ parallel training, leading to high accuracy when classifying linearly separable 2D and 3D tasks. Notably, the biocompatible nature of the materials employed in the array offers promising prospects for the development of smart and adaptable bioelectronics that can directly interface with the biological environment.
{"title":"All Organic Fully Integrated Neuromorphic Crossbar Array","authors":"Setareh Kazemzadeh, Tim Stevens, Yoeri van de Burgt","doi":"10.1002/aelm.202500054","DOIUrl":"https://doi.org/10.1002/aelm.202500054","url":null,"abstract":"Analog non-volatile memory devices, such as electrochemical random-access memory (ECRAM), have emerged as a promising platform for in-memory computing, facilitating efficient data processing. In this research, a pioneering approach is presented by introducing an all-organic and fully integrated crossbar array comprising 3 × 3 ECRAM devices, notable for its facile fabrication employing photolithography techniques and exclusive utilization of organic materials for the devices and resistors. The crossbar array demonstrates remarkable capabilities, enabling inference and in situ parallel training, leading to high accuracy when classifying linearly separable 2D and 3D tasks. Notably, the biocompatible nature of the materials employed in the array offers promising prospects for the development of smart and adaptable bioelectronics that can directly interface with the biological environment.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"209 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143471087","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Jan L. Rieck, Marcel L. Kolster, Romar A. Avila, Mian Li, Guus Rijnders, Gertjan Koster, Thom Palstra, Roeland Huijink, Beatriz Noheda
Conducting domain walls (DWs) hold promise for novel electronic devices. However, the electrical characterization of DWs is challenging because of their nanoscale dimensions and the large driving fields that are typically required due to the high resistance of the hosting material. Until now, lateral transport measurements of DWs have mainly been realized using lateral nano‐gap electrode structures or conventional conducting atomic force microscopy (cAFM). Here, a non‐destructive and lithography‐free method is reported for lateral transport measurement of DWs, which is applied to BiFeO3 (BFO) thin films utilizing a submicron‐scale multi‐point probe (MPP). Using different sets of individually biased probe tips, two‐ and four‐point measurements can be conducted over various lateral distances with a minimum tip spacing of several hundreds of nanometers. These measurements reveal the ohmic behavior of ferroelastic/ferroelectric 71° DWs in BFO thin films and the first collinear four‐point resistivity value of a single DW (free of lead and contact resistances). These findings contribute to a better understanding of DW conduction, highlighting the capability of MPPs for lateral transport measurements of materials containing conducting or even memristive nanoscale networks.
{"title":"Ohmic Response in BiFeO3 Domain Walls by Submicron‐Scale Four‐Point Probe Resistance Measurements","authors":"Jan L. Rieck, Marcel L. Kolster, Romar A. Avila, Mian Li, Guus Rijnders, Gertjan Koster, Thom Palstra, Roeland Huijink, Beatriz Noheda","doi":"10.1002/aelm.202400794","DOIUrl":"https://doi.org/10.1002/aelm.202400794","url":null,"abstract":"Conducting domain walls (DWs) hold promise for novel electronic devices. However, the electrical characterization of DWs is challenging because of their nanoscale dimensions and the large driving fields that are typically required due to the high resistance of the hosting material. Until now, lateral transport measurements of DWs have mainly been realized using lateral nano‐gap electrode structures or conventional conducting atomic force microscopy (cAFM). Here, a non‐destructive and lithography‐free method is reported for lateral transport measurement of DWs, which is applied to BiFeO<jats:sub>3</jats:sub> (BFO) thin films utilizing a submicron‐scale multi‐point probe (MPP). Using different sets of individually biased probe tips, two‐ and four‐point measurements can be conducted over various lateral distances with a minimum tip spacing of several hundreds of nanometers. These measurements reveal the ohmic behavior of ferroelastic/ferroelectric 71° DWs in BFO thin films and the first collinear four‐point resistivity value of a single DW (free of lead and contact resistances). These findings contribute to a better understanding of DW conduction, highlighting the capability of MPPs for lateral transport measurements of materials containing conducting or even memristive nanoscale networks.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"17 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143470586","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Preetam Dacha, Vaidehi Lapalikar, Anju Kumari Rohitlal, Mike Hambsch, Michael Ruck, Stefan C. B. Mannsfeld
The emerging light absorber material bismuth oxide iodide BiOI, possesses convenient solution processibility and excellent chemical stability under ambient conditions along with a high light absorption coefficient reaching 5·104 cm−1. Classified as “defect‐tolerant,” BiOI is considered a green and low‐cost alternative to lead‐halide perovskites in optoelectronic devices. Its investigation in photoresponsive electronic devices, however, is limited due to its anisotropic carrier mobility and unique morphology in thin films. To utilize the advantageous properties of BiOI, in this work, it is integrated into a phototransistor as a bilayer heterojunction with the organic semiconductor DPPDTT. The smooth interfaces and higher carrier mobility of DPPDTT compared to BiOI and its hydrophobic nature enable their synergistic hybridization in a heterojunction that is optically active from the UV to the NIR region. The unencapsulated heterojunction phototransistors are stable for at least three months under atmospheric conditions. They show a high Ilight/Idark current ratio of over 104 at only 0.7 mW·cm−2 irradiation intensity at all investigated wavelengths, and a specific detectivity up to 5·1012 Jones. Initial synaptic measurements additionally reveal a neuromorphic behavior in the devices. This work charts a course towards the realization of cost‐effective high‐performance photoresponsive electronics for diverse applications.
{"title":"Solution‐Processed Bismuth Oxide Iodide/Organic‐Semiconductor Heterojunction for UV–vis‐NIR Photoresponsive Electronics","authors":"Preetam Dacha, Vaidehi Lapalikar, Anju Kumari Rohitlal, Mike Hambsch, Michael Ruck, Stefan C. B. Mannsfeld","doi":"10.1002/aelm.202400726","DOIUrl":"https://doi.org/10.1002/aelm.202400726","url":null,"abstract":"The emerging light absorber material bismuth oxide iodide BiOI, possesses convenient solution processibility and excellent chemical stability under ambient conditions along with a high light absorption coefficient reaching 5·10<jats:sup>4</jats:sup> cm<jats:sup>−1</jats:sup>. Classified as “defect‐tolerant,” BiOI is considered a green and low‐cost alternative to lead‐halide perovskites in optoelectronic devices. Its investigation in photoresponsive electronic devices, however, is limited due to its anisotropic carrier mobility and unique morphology in thin films. To utilize the advantageous properties of BiOI, in this work, it is integrated into a phototransistor as a bilayer heterojunction with the organic semiconductor DPPDTT. The smooth interfaces and higher carrier mobility of DPPDTT compared to BiOI and its hydrophobic nature enable their synergistic hybridization in a heterojunction that is optically active from the UV to the NIR region. The unencapsulated heterojunction phototransistors are stable for at least three months under atmospheric conditions. They show a high <jats:italic>I</jats:italic><jats:sub>light</jats:sub>/<jats:italic>I</jats:italic><jats:sub>dark</jats:sub> current ratio of over 10<jats:sup>4</jats:sup> at only 0.7 mW·cm<jats:sup>−2</jats:sup> irradiation intensity at all investigated wavelengths, and a specific detectivity up to 5·10<jats:sup>12</jats:sup> Jones. Initial synaptic measurements additionally reveal a neuromorphic behavior in the devices. This work charts a course towards the realization of cost‐effective high‐performance photoresponsive electronics for diverse applications.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"17 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143451862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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