Single-molecule junctions exploit the internal structure of molecular orbitals to construct a new class of functional quantum devices. The demonstration of negative differential resistance (NDR) in single-molecule junctions is direct evidence of quantum mechanical tunneling through a molecular orbital. Here, a pronounced NDR effect is reported with a peak-to-valley ratio of 30.1 on a single-molecule junction of π-conjugated quinoidal-fused oligosilole derivatives, Si2 × 2, embedded between the unique electroless gold-plated heteroepitaxial spherical Au/Pt nanogap electrodes. This NDR feature persists in a consecutive endurance test of 180 current traces. the thermally stable NDR effects in the Si2 × 2 single-molecule junctions between 9 and 300 K are demonstrated. The density functional theory calculations under electric fields indicate that the NDR effect can be ascribed to the bias-dependent resonant tunneling transport via the polarized HOMO, which has asymmetrically changed electrode coupling with increased bias voltages. The results confirm a promising electrical platform for constructing functional quantum devices at the single-molecule level.
{"title":"Negative Differential Resistance in Single-Molecule Junctions Based on Heteroepitaxial Spherical Au/Pt Nanogap Electrodes","authors":"Dongbao Yin, Miku Furushima, Eiji Tsuchihata, Seiichiro Izawa, Tomoya Ono, Ryo Shintani, Yutaka Majima","doi":"10.1002/aelm.202400390","DOIUrl":"https://doi.org/10.1002/aelm.202400390","url":null,"abstract":"Single-molecule junctions exploit the internal structure of molecular orbitals to construct a new class of functional quantum devices. The demonstration of negative differential resistance (NDR) in single-molecule junctions is direct evidence of quantum mechanical tunneling through a molecular orbital. Here, a pronounced NDR effect is reported with a peak-to-valley ratio of 30.1 on a single-molecule junction of π-conjugated quinoidal-fused oligosilole derivatives, Si2 × 2, embedded between the unique electroless gold-plated heteroepitaxial spherical Au/Pt nanogap electrodes. This NDR feature persists in a consecutive endurance test of 180 current traces. the thermally stable NDR effects in the Si2 × 2 single-molecule junctions between 9 and 300 K are demonstrated. The density functional theory calculations under electric fields indicate that the NDR effect can be ascribed to the bias-dependent resonant tunneling transport via the polarized HOMO, which has asymmetrically changed electrode coupling with increased bias voltages. The results confirm a promising electrical platform for constructing functional quantum devices at the single-molecule level.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141333918","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Amalie P. Laursen, Jens P. Frandsen, Priyank Shyam, Mathias I. Mørch, Frederik H. Gjørup, Harikrishnan Vijayan, Mads R. V. Jørgensen, Mogens Christensen
The synthesis of a strontium hexaferrite magnet is studied using in situ synchrotron powder X-ray diffraction (PXRD) with a 16-ms time resolution. The precursor material is cold compacted shape-controlled goethite and strontium carbonate. The time evolution of the phases is modeled with sequential Rietveld refinements revealing that strontium hexaferrite forms within seconds at ≈1173 K. Texture analysis is performed on selected PXRD frames throughout the experiment, and the preferred orientation introduced by cold-pressing goethite prevails through the iron oxide phase transitions (goethite → hematite → strontium hexaferrite). Electron backscatter diffraction (EBSD) data on the final pellet confirms the preferred orientation observed with PXRD. The resulting magnet has respectable magnetic properties, considering the simplicity of the preparation method, with an energy product (BHmax) of 18.6(8) kJ m−3.
{"title":"Aligned Permanent Magnet Made in Seconds–An In Situ Diffraction Study","authors":"Amalie P. Laursen, Jens P. Frandsen, Priyank Shyam, Mathias I. Mørch, Frederik H. Gjørup, Harikrishnan Vijayan, Mads R. V. Jørgensen, Mogens Christensen","doi":"10.1002/aelm.202400077","DOIUrl":"https://doi.org/10.1002/aelm.202400077","url":null,"abstract":"The synthesis of a strontium hexaferrite magnet is studied using in situ synchrotron powder X-ray diffraction (PXRD) with a 16-ms time resolution. The precursor material is cold compacted shape-controlled goethite and strontium carbonate. The time evolution of the phases is modeled with sequential Rietveld refinements revealing that strontium hexaferrite forms within seconds at ≈1173 K. Texture analysis is performed on selected PXRD frames throughout the experiment, and the preferred orientation introduced by cold-pressing goethite prevails through the iron oxide phase transitions (goethite → hematite → strontium hexaferrite). Electron backscatter diffraction (EBSD) data on the final pellet confirms the preferred orientation observed with PXRD. The resulting magnet has respectable magnetic properties, considering the simplicity of the preparation method, with an energy product (<i>BH</i><sub>max</sub>) of 18.6(8) kJ m<sup>−3</sup>.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141329573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Chen-Chen Er, Cheng-May Fung, Wei-Kean Chong, Yong Jieh Lee, Lling-Lling Tan, Yee Sin Ang, Nikhil V. Medhekar, Siang-Piao Chai
Elemental phosphorus in its various allotropes has received tremendous research attention recently due to its intriguing electronic and structural properties. Notably, the application of nanostructured materials to overcome the inherent flaws in bulk materials is promising. However, many challenges need to be addressed before its widespread implementation. Thus, a specific tenet to design novel and robust nanomaterials is a decisive factor in the desired outcome, and the most daunting task before realizing this is solving the Schrödinger equation. First principle density functional theory (DFT) calculations have emerged as an insightful and accurate design tool to investigate the structural, electronic, and possible synthesis scenarios of yet undiscovered materials at atomic levels. In this review, the basic principles and the importance of DFT are discussed, followed by a summary of recent advances in the first principle study of elemental phosphorus-based nanomaterials. Elemental phosphorus-based nanomaterials and their allotropes have attracted growing interest in the renewable energy community due to their modulable product selectivity. However, the understanding of the physical phenomena of allotropic modification is still lacking. Therefore, the aim is to motivate experimental researchers to conduct DFT studies and experiments to comprehend relevant engineered nanomaterials better. Finally, the challenges and potential future research directions for further theoretical and computational development of phosphorus-based nanomaterials are outlined.
{"title":"Computational Design of 2D Phosphorus Nanostructures for Renewable Energy Applications: A Review","authors":"Chen-Chen Er, Cheng-May Fung, Wei-Kean Chong, Yong Jieh Lee, Lling-Lling Tan, Yee Sin Ang, Nikhil V. Medhekar, Siang-Piao Chai","doi":"10.1002/aelm.202300869","DOIUrl":"https://doi.org/10.1002/aelm.202300869","url":null,"abstract":"Elemental phosphorus in its various allotropes has received tremendous research attention recently due to its intriguing electronic and structural properties. Notably, the application of nanostructured materials to overcome the inherent flaws in bulk materials is promising. However, many challenges need to be addressed before its widespread implementation. Thus, a specific tenet to design novel and robust nanomaterials is a decisive factor in the desired outcome, and the most daunting task before realizing this is solving the Schrödinger equation. First principle density functional theory (DFT) calculations have emerged as an insightful and accurate design tool to investigate the structural, electronic, and possible synthesis scenarios of yet undiscovered materials at atomic levels. In this review, the basic principles and the importance of DFT are discussed, followed by a summary of recent advances in the first principle study of elemental phosphorus-based nanomaterials. Elemental phosphorus-based nanomaterials and their allotropes have attracted growing interest in the renewable energy community due to their modulable product selectivity. However, the understanding of the physical phenomena of allotropic modification is still lacking. Therefore, the aim is to motivate experimental researchers to conduct DFT studies and experiments to comprehend relevant engineered nanomaterials better. Finally, the challenges and potential future research directions for further theoretical and computational development of phosphorus-based nanomaterials are outlined.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141315815","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Musa Hussain, Hijab Zahra, Syed Muzahir Abbas, Yong Zhu
Dielectrics are non-conducting substances that are primarily utilized to hold electric charges. These materials are widely employed in the field of chemical mechanical, civil and structural engineering, because of their inherent insulating properties. Besides these domains, dielectric materials are also used in electrical and electronic applications. Dielectric materials have shown an ever-increasing potential in recent years in the fabrication of antennas, sensors, and optical devices that are extensively utilized for on-body, environmental, robotics, and biomedical applications. With inherent electrostatic shielding, insulation, and dielectric relaxations, these materials are used in intelligent electronic devices used for biomedical applications, smart devices, vehicles, and future IoT applications. Numerous applications necessitate multiple kinds of dielectric, classified based on their polarization, flexibility, thickness, dielectric constant, and specific application. In this extensive research review, the characteristics and various aspects of dielectric materials are discussed, followed by a thorough and detailed review of flexible dielectrics and their usage in flexible electronics. Additionally, the practicality and applications of these materials which come from a variety of publications in the literature are also discussed. Moreover, in-depth study of dieletrics in sensors and RF applications are performed.
{"title":"Flexible Dielectric Materials: Potential and Applications in Antennas and RF Sensors","authors":"Musa Hussain, Hijab Zahra, Syed Muzahir Abbas, Yong Zhu","doi":"10.1002/aelm.202400240","DOIUrl":"https://doi.org/10.1002/aelm.202400240","url":null,"abstract":"Dielectrics are non-conducting substances that are primarily utilized to hold electric charges. These materials are widely employed in the field of chemical mechanical, civil and structural engineering, because of their inherent insulating properties. Besides these domains, dielectric materials are also used in electrical and electronic applications. Dielectric materials have shown an ever-increasing potential in recent years in the fabrication of antennas, sensors, and optical devices that are extensively utilized for on-body, environmental, robotics, and biomedical applications. With inherent electrostatic shielding, insulation, and dielectric relaxations, these materials are used in intelligent electronic devices used for biomedical applications, smart devices, vehicles, and future IoT applications. Numerous applications necessitate multiple kinds of dielectric, classified based on their polarization, flexibility, thickness, dielectric constant, and specific application. In this extensive research review, the characteristics and various aspects of dielectric materials are discussed, followed by a thorough and detailed review of flexible dielectrics and their usage in flexible electronics. Additionally, the practicality and applications of these materials which come from a variety of publications in the literature are also discussed. Moreover, in-depth study of dieletrics in sensors and RF applications are performed.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141309259","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Lu Wang and co-workers have fabricated a bioartificial synapse composited with egg albumen and carbon nanotubes (see article number 2300631). The electrical characteristics of the contact interface between carbon nanotubes doped with Fe substitution and Al electrode are analyzed by first principles, and the adsorption, charge distribution, and band structure between them are studied.
光电人工突触Lu Wang 及其合作者制作了一种由鸡蛋白蛋白和碳纳米管组成的生物人工突触（见文章编号 2300631）。通过第一性原理分析了掺杂铁的碳纳米管与铝电极接触界面的电学特性，并研究了它们之间的吸附、电荷分布和带状结构。
{"title":"First-Principles Study of the Electronic Properties of Egg Albumen Optoelectronic Artificial Synapses by Carbon Nanotube Insertion (Adv. Electron. Mater. 6/2024)","authors":"Lu Wang, Tianyu Yang, Yuehang Ju, Dianzhong Wen","doi":"10.1002/aelm.202470024","DOIUrl":"https://doi.org/10.1002/aelm.202470024","url":null,"abstract":"<p><b>Optoelectronic Artificial Synapses</b></p><p>Lu Wang and co-workers have fabricated a bioartificial synapse composited with egg albumen and carbon nanotubes (see article number 2300631). The electrical characteristics of the contact interface between carbon nanotubes doped with Fe substitution and Al electrode are analyzed by first principles, and the adsorption, charge distribution, and band structure between them are studied.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202470024","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141298435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Yuxuan Liu, Mesbah Ahmad, Richard A. Venditti, Orlin D. Velev, Yong Zhu
Sustainable Soft Electronics
This cover, referring to article number 2300792 by Orlin D. Velev, Yong Zhu, and co-workers, illustrates the concept of sustainable soft electronics with biodegradable substrate (agarose/glycerol) and recyclable functional material (silver nanowires). The background represents the molecular structure of the biodegradable substrate with interaction between the agarose polymer helices (blue) and glycerol molecules (red and white). The soft electronic circuit is flexible and stretchable.
可持续软电子学本封面引用了 Orlin D. Velev、Yong Zhu 及合作者的 2300792 号文章，阐述了可持续软电子学的概念，该概念采用可生物降解的基底（琼脂糖/甘油）和可回收的功能材料（银纳米线）。背景显示了可生物降解基底的分子结构，以及琼脂糖聚合物螺旋（蓝色）和甘油分子（红色和白色）之间的相互作用。软电子电路具有柔性和可拉伸性。
{"title":"Sustainable Soft Electronics Combining Recyclable Metal Nanowire Circuits and Biodegradable Gel Film Substrates (Adv. Electron. Mater. 6/2024)","authors":"Yuxuan Liu, Mesbah Ahmad, Richard A. Venditti, Orlin D. Velev, Yong Zhu","doi":"10.1002/aelm.202470022","DOIUrl":"https://doi.org/10.1002/aelm.202470022","url":null,"abstract":"<p><b>Sustainable Soft Electronics</b></p><p>This cover, referring to article number 2300792 by Orlin D. Velev, Yong Zhu, and co-workers, illustrates the concept of sustainable soft electronics with biodegradable substrate (agarose/glycerol) and recyclable functional material (silver nanowires). The background represents the molecular structure of the biodegradable substrate with interaction between the agarose polymer helices (blue) and glycerol molecules (red and white). The soft electronic circuit is flexible and stretchable.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202470022","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141298810","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Douglas Henrique Vieira, Gabriel Leonardo Nogueira, Leandro Merces, Carlos César Bof Bufon, Neri Alves
Oxide-Based Electrolyte-Gated Transistors
ZnO-based transistors have been fabricated using an innovative configuration that combines vertical architecture with electrolyte usage (see article number 2300562 by Douglas Henrique Vieira, Neri Alves, and co-workers). The diode counterpart unveils a current–voltage relationship arising from space-charge limited current, which undergoes continuous shift due to the field-effect promoted by the charge accumulation in the source's perforation, driven by its capacitor counterpart. Beyond the transport mechanism, the findings showcase excellence in current switching based on irradiance – a phenomenon analogous to the field-effect.
基于氧化物的电解质门控晶体管ZnO 基晶体管的制造采用了一种创新配置，将垂直结构与电解质的使用相结合（参见 Douglas Henrique Vieira、Neri Alves 及合作者的 2300562 号文章）。二极管的对应物揭示了空间电荷限制电流所产生的电流-电压关系，这种关系在电容器对应物的驱动下，由于源穿孔中电荷积累所产生的场效应而不断发生变化。除了传输机制之外，研究结果还展示了基于辐照度的电流开关的卓越性能--这是一种类似于场效应的现象。
{"title":"Electrolyte-Gated Vertical Transistor Charge Transport Enables Photo-Switching (Adv. Electron. Mater. 6/2024)","authors":"Douglas Henrique Vieira, Gabriel Leonardo Nogueira, Leandro Merces, Carlos César Bof Bufon, Neri Alves","doi":"10.1002/aelm.202470021","DOIUrl":"https://doi.org/10.1002/aelm.202470021","url":null,"abstract":"<p><b>Oxide-Based Electrolyte-Gated Transistors</b></p><p>ZnO-based transistors have been fabricated using an innovative configuration that combines vertical architecture with electrolyte usage (see article number 2300562 by Douglas Henrique Vieira, Neri Alves, and co-workers). The diode counterpart unveils a current–voltage relationship arising from space-charge limited current, which undergoes continuous shift due to the field-effect promoted by the charge accumulation in the source's perforation, driven by its capacitor counterpart. Beyond the transport mechanism, the findings showcase excellence in current switching based on irradiance – a phenomenon analogous to the field-effect.\u0000\u0000 <figure>\u0000 <div><picture>\u0000 <source></source></picture><p></p>\u0000 </div>\u0000 </figure></p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202470021","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141298808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sung-Uk Yoon, Yun Hwangbo, Bongkyun Jang, Hyeon-Don Kim, Jae-Hyun Kim
Transparent displays are crucial for various applications, particularly for their potential use as windows in future self-driving cars. These displays require high transparency, low power consumption, and high mechanical reliability. Micro-LEDs have emerged as ideal devices for the transparent displays. Efficient mass-production processes are essential for the commercialization of transparent micro-LED displays. This study presents roll-based mass transfer to enhance the productivity of transparent micro-LED displays. Roll transfer processes traditionally face resolution challenges in alignment repeatability and positional errors in both the transverse direction (TD) and machine direction (MD). This study proposes a roll-to-plate (R2P) transfer process with overlay alignment to improve the repeatability precision of the alignment. Detailed experimental analyses address positional errors in the TD and MD, attributed to initial contact errors and linear velocity asynchrony, respectively. The results demonstrate successful micro-LED transfer onto a transparent circuit board (TCB) with a maximum positional error of 3.2 µm and a 99.75% yield. The resulting micro-LED display achieves a transparency of 72.5% with 68 pixels per inch. This study overcomes the alignment challenges in the R2P process and contributes to the commercialization of transparent micro-LED displays. It is expected to positively impact the manufacturing of transparent applications that involve rolling processes.
透明显示屏对各种应用都至关重要，尤其是在未来的自动驾驶汽车中可能用作车窗。这些显示器要求高透明度、低功耗和高机械可靠性。微型 LED 已成为透明显示器的理想器件。高效的大规模生产工艺对于透明微型 LED 显示屏的商业化至关重要。本研究提出了基于轧辊的大规模转移工艺，以提高透明微型 LED 显示屏的生产率。传统的辊传工艺在横向（TD）和机器方向（MD）的对准重复性和位置误差方面都面临着分辨率的挑战。本研究提出了一种具有叠加对准功能的辊对板（R2P）转移工艺，以提高对准的可重复性精度。详细的实验分析解决了 TD 和 MD 中的位置误差问题，这些误差分别归因于初始接触误差和线性速度不同步。结果表明，微型 LED 成功转移到了透明电路板 (TCB)，最大位置误差为 3.2 µm，成品率为 99.75%。最终微型 LED 显示屏的透明度达到 72.5%，每英寸 68 个像素。这项研究克服了 R2P 工艺中的对准难题，为透明微型 LED 显示器的商业化做出了贡献。预计它将对涉及轧制工艺的透明应用的制造产生积极影响。
{"title":"Transfer of Micro-LEDs with Roll-Based Direct Overlay Alignment for Manufacturing Transparent Displays","authors":"Sung-Uk Yoon, Yun Hwangbo, Bongkyun Jang, Hyeon-Don Kim, Jae-Hyun Kim","doi":"10.1002/aelm.202400236","DOIUrl":"https://doi.org/10.1002/aelm.202400236","url":null,"abstract":"Transparent displays are crucial for various applications, particularly for their potential use as windows in future self-driving cars. These displays require high transparency, low power consumption, and high mechanical reliability. Micro-LEDs have emerged as ideal devices for the transparent displays. Efficient mass-production processes are essential for the commercialization of transparent micro-LED displays. This study presents roll-based mass transfer to enhance the productivity of transparent micro-LED displays. Roll transfer processes traditionally face resolution challenges in alignment repeatability and positional errors in both the transverse direction (TD) and machine direction (MD). This study proposes a roll-to-plate (R2P) transfer process with overlay alignment to improve the repeatability precision of the alignment. Detailed experimental analyses address positional errors in the TD and MD, attributed to initial contact errors and linear velocity asynchrony, respectively. The results demonstrate successful micro-LED transfer onto a transparent circuit board (TCB) with a maximum positional error of 3.2 µm and a 99.75% yield. The resulting micro-LED display achieves a transparency of 72.5% with 68 pixels per inch. This study overcomes the alignment challenges in the R2P process and contributes to the commercialization of transparent micro-LED displays. It is expected to positively impact the manufacturing of transparent applications that involve rolling processes.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141287387","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A study on a bias voltage-dependent weight update characteristics in a sub-threshold region of a low power synaptic pass-transistor (SPT) is presented with a Hf-doped zinc oxide active layer. The SPT is a synaptic thin-film transistor (TFT) in series with a load TFT which is used as a resistive load (RL) to be scaled by a bias voltage (VB). Here, when the VB of the load TFT is modulated, the RL can be changed. With the changed RL, it is expected that the weight update characteristics (i.e., dynamic ratio) and electrical characteristics (i.e., power consumption) of the SPT are varied, respectively, suggesting a trade-off relation between the dynamic ratio and power consumption. To check these, the pulsed characteristics of the fabricated SPT is monitored for different VB, respectively. From experimental results, as increasing VB, it is found that the decreased RL leads to the increase of the power consumption while enhancing the dynamic ratio because a full depression (FD) can be relatively easy. On the other hand, when the VB is reduced, the RL is increased resulting in the decrease of both the power dissipation and the dynamic ratio due to a difficulty of FD.
{"title":"A Bias-Dependent Weight Update Characteristics of Low Power Synaptic Pass-Transistors with a Hf-Doped ZnO Channel Layer","authors":"Danyoung Cha, Jeongseok Pi, Gyoungyeop Do, Nayeong Lee, Kunhee Tae, Sungsik Lee","doi":"10.1002/aelm.202400108","DOIUrl":"https://doi.org/10.1002/aelm.202400108","url":null,"abstract":"A study on a bias voltage-dependent weight update characteristics in a sub-threshold region of a low power synaptic pass-transistor (SPT) is presented with a Hf-doped zinc oxide active layer. The SPT is a synaptic thin-film transistor (TFT) in series with a load TFT which is used as a resistive load (<i>R</i><sub>L</sub>) to be scaled by a bias voltage (<i>V</i><sub>B</sub>). Here, when the <i>V</i><sub>B</sub> of the load TFT is modulated, the <i>R</i><sub>L</sub> can be changed. With the changed <i>R</i><sub>L</sub>, it is expected that the weight update characteristics (i.e., dynamic ratio) and electrical characteristics (i.e., power consumption) of the SPT are varied, respectively, suggesting a trade-off relation between the dynamic ratio and power consumption. To check these, the pulsed characteristics of the fabricated SPT is monitored for different <i>V</i><sub>B</sub>, respectively. From experimental results, as increasing <i>V</i><sub>B</sub>, it is found that the decreased <i>R</i><sub>L</sub> leads to the increase of the power consumption while enhancing the dynamic ratio because a full depression (FD) can be relatively easy. On the other hand, when the <i>V</i><sub>B</sub> is reduced, the <i>R</i><sub>L</sub> is increased resulting in the decrease of both the power dissipation and the dynamic ratio due to a difficulty of FD.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":null,"pages":null},"PeriodicalIF":6.2,"publicationDate":"2024-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141246281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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