Advanced Electronic Materials最新文献

{"title":"Getting Under the Sensor's Skin: The Importance of Electrical Contact Characterization for Conductive Composite Elastomers","authors":"Claire C. Onsager, Lev Rovinsky, Can C. Aygen, Shira K. Cohen, Noa Lachman, Matthew A. Grayson","doi":"10.1002/aelm.202400848","DOIUrl":"https://doi.org/10.1002/aelm.202400848","url":null,"abstract":"Conductive elastomer composites can be used as flexible, lightweight, and inexpensive sensors, but they require ohmic electrical contacts to ensure readout consistency, and such contacts can suffer from hysteresis, non-ohmic behavior, and cyclic fatigue. This work investigates a common cause of non-ohmic conduction in such composite contacts, namely the thin insulating layer native to the surface of most silicone rubber composites that have been infused with multi-walled carbon nanotubes for piezoresistive sensing. Voltage sweep dc measurements of individual contacts on this surface layer behave as parallel head-to-tail diodes with asymmetric hysteresis. Frequency sweep ac measurements quantify the insulator thickness with a leaky capacitor model to be ∼1 µm, independent of nanotube concentration, much thicker than the apparent layer thickness as imaged with scanning electron microscopy. This analysis also confirms highly anisotropic bulk conduction, circa 100 times higher in-plane than cross-plane. To remove the surface layer, a simple surface abrasion is shown to achieve deep ohmic electrical contact to the elastomer bulk. A three-terminal method for verifying ohmic contacts is demonstrated and works even when all contacts are non-ohmic. This three-terminal method be easily applied to other conductive polymers for contact quality-testing.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"55 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Moisture Harvesting by the Structure Regulation of Hygroscopic Hydrogel for Energy and Water Sustainability","authors":"Yujie Du, Yongliang Zheng, Hong Liu, Shujing Zhao, Xiaomian Wang, Lin Yang","doi":"10.1002/aelm.202400802","DOIUrl":"https://doi.org/10.1002/aelm.202400802","url":null,"abstract":"Water and energy are the cornerstones of human development, with more than half of the world's population facing water scarcity issues. Atmospheric moisture is widely distributed around the globe, and the rational utilization of moisture can create tremendous value. Here, the sources of hygroscopic materials, methods of manufacturing hydrogels, properties of these hydrogels, and potential energy applications are concluded. To make the hydrogels with high hydrophilicity, ultrasonic oscillation, freeze drying, and spin coating can be used as the synthesis strategies. The main focus is on the characteristic parameters of hydrogels with water uptake, dehydration temperature, conductivity, mechanical stability, swelling behaviors, and heat transfer coefficient. These unique features will affect the performances of assembles, devices, and instruments. Subsequently, the potential applications of hydrogels are summarized, such as moisture harvesting and splitting with fuel production, dehumidification, thermal management in electronic devices, solar water evaporation, and electricity production. Finally, future directions and issues of interest are proposed to promote the diverse development of hydrogels and relational systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"51 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143375580","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"A New Type Microwave Absorption Materials: Metal–Organic‐Frameworks (MOFs) Used as Non‐Conductive Material Combination with P‐C‐800","authors":"Guodong Han, Song Zhao, Sai Sui, Bo Feng, Yudeng Wang, Junxiang Zhou, Zhuolun Li, Xiaoxia Tian, Yuxiang Jia, Jiafu Wang, Shaobo Qu","doi":"10.1002/aelm.202400738","DOIUrl":"https://doi.org/10.1002/aelm.202400738","url":null,"abstract":"Metal–Organic‐Frameworks (MOFs) are commonly used as microwave‐absorbing materials after pyrolysis treatment. Rare researchers treat MOFs as non‐conductive materials and use them as absorbing materials directly. In this paper, MOFs@P‐C‐800 composite materials are prepared adopt to hydrothermal and ultrasonic dispersion methods by regulating the morphological characteristics of MOFs and the content of P‐C‐800. As for the Co‐BDC‐P‐C‐800, the maximum reflection loss reaches −18.4 dB at 14.29 GHz and the effective absorption bandwidth (EAB) achieves 3.87 GHz from 13.5 to 17.37 GHz. After the contents of P‐C‐800 is adjusted, the Co‐BDC‐P‐C‐800 (0.05 g) exhibited excellent microwave absorption performance, the maximum <jats:italic>RL</jats:italic> value of −60 dB at 13 GHz with a thickness of 2.0 mm, and the EAB achieves 5.91 GHz from 12.02 to 17.93 GHz. This paper not only provides new application direction for MOFs, but also offers a promising direction for the research and development of absorbing materials.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"63 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143371535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Ultra-Sensitive Short-Wave Infrared Single-Photon Detection Using a Silicon Single-Electron Transistor","authors":"Pooja Sudha, Shogo Miyagawa, Arup Samanta, Daniel Moraru","doi":"10.1002/aelm.202400714","DOIUrl":"https://doi.org/10.1002/aelm.202400714","url":null,"abstract":"Ultra-sensitive short-wave infrared (SWIR) photon detection is a crucial aspect of ongoing research in quantum technology. However, developing such detectors on a CMOS-compatible silicon technological platform has been challenging due to the low absorption coefficient for silicon in the SWIR range. In this study, a codoped silicon-based single-electron transistor (SET) in a silicon-on-insulator field-effect transistor (SOI-FET) configuration is fabricated, which successfully detects single photons in the SWIR range with ultra-high sensitivity. The detection mechanism is evidenced by the shift in the onset of the SET current peaks and by the occurrence of random telegraph signals (RTS) under light irradiation, as compared to the dark condition. The calculated sensitivity of our device, in terms of noise equivalent power (NEP), is ≈10⁻¹⁹ W Hz^−1/2.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"47 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143258014","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Realization of Non-Equilibrium Wurtzite Structure in Heterovalent Ternary MgSiN2 Film Grown by Reactive Sputtering","authors":"Sotaro Kageyama, Kazuki Okamoto, Shinnosuke Yasuoka, Keisuke Ide, Kota Hanzawa, Yoshiomi Hiranaga, Pochun Hsieh, Sankalpa Harza, Albert Suceava, Akash Saha, Hiroko Yokota, Kei Shigematsu, Masaki Azuma, Venkatraman Gopalan, Hiroshi Uchida, Hidenori Hiramatsu, Hiroshi Funakubo","doi":"10.1002/aelm.202400880","DOIUrl":"https://doi.org/10.1002/aelm.202400880","url":null,"abstract":"The piezoelectric and ferroelectric applications of heterovalent ternary materials are not well explored. Epitaxial MgSiN₂ films are grown at 600 °C on (111)Pt//(001)Al₂O₃ substrates by the reactive sputtering method using metallic Mg and Si under the N₂ atmosphere. Detailed X-ray diffraction measurements and transmission electron microscopy observations revealed that the epitaxially grown films on the substrates have a hexagonal wurtzite structure with <i>c</i>-axis out-of-plane orientation. The random occupation of this structure by Mg and Si differs from that of the previously reported structure in which these two cations periodically occupy the cationic sites. However, the lattice spacings closely approximate those that are previously reported, irrespective of the ordering, and they are almost comparable with those of (Al_0.8Sc_0.2)N. The wide bandgap of &gt;5.0 eV in deposited MgSiN₂ is compatible with that of AlN and suggests durability against the application of strong external electric fields, possibly to induce polarization switching. In addition, MgSiN₂ is shown to have piezoelectric properties with an effective <i>d</i>₃₃ value of 2.3 pm V⁻¹ for the first time. This work demonstrates the compositional expansion of hexagonal wurtzite to heterovalent ternary nitrides for novel piezoelectric materials, whose ferroelectricity is expected.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"64 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143258011","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Contactless Triboelectric Sensing for Real-Time 3D Motion Recognition in Human-Computer Interaction","authors":"Qinghao Xu, Junhao Gong, Jiayi Chen, Yimeng Zhang, Hongfa Zhao, Jiaqi Yin, Runze Zhao, Chuqiao Lyu, Wenbo Ding, Changsheng Wu","doi":"10.1002/aelm.202400950","DOIUrl":"https://doi.org/10.1002/aelm.202400950","url":null,"abstract":"In the rapidly advancing fields of artificial intelligence and the Internet of Things, there is a growing need for human-computer interaction (HCI) solutions that are not only intuitive but also efficient and easy to use. Triboelectric nanogenerators present a promising approach to developing wireless human-machine interfaces, offering advantages such as simple operating principles and flexible, adaptable designs. This study introduces an HCI system that leverages a contactless triboelectric detector (CTD) to classify complex motion patterns in 3D space. The CTD system consists of a contactless sensing panel, a silicone rubber finger sleeve, a signal acquisition circuit, and a mobile terminal, which together enable the seamless acquisition and classification of weak wireless signals. One of the key benefits of the system is its lack of active energy consumption, making it highly energy-efficient. Additionally, its simple structure and ease of deployment make it an attractive option for various applications. Experimental results illustrate that the proposed system has significant potential for interactive perception in industrial environments. With a motion recognition accuracy of 99.33%—including for intricate motions such as spiral curves—this system demonstrates its potential as a next-generation solution for wireless HCI systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"19 2 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143258137","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Copper Paste Printed Paper-Based Dual-Band Antenna for Wearable Wireless Electronics","authors":"Wendong Yang,&nbsp;Xun Zhao,&nbsp;Jingchang Nan,&nbsp;Michael Hengge,&nbsp;J. W. List-Kratochvil","doi":"10.1002/aelm.202400915","DOIUrl":"10.1002/aelm.202400915","url":null,"abstract":"<p><i>Adv. Electron. Mater</i>. <b>2024</b> 2400522</p><p>DOI: 10.1002/aelm.202400522</p><p>The authors regret an error in Figure 4 and Figure 7 of the published article and have provided corrected versions, see below. Accordingly, the related analysis in the text has been updated as follows.</p><p>Corrected Figure 4:</p><p></p><p>Figure 4. a) XRD results of copper films sintered at different plasma power for 30 min, b,c) XPS results of copper film sintered at 300 W for 30 min, d) Resistivity of copper films sintered at different temperatures for 60 min and e) at 300 W for different times.</p><p>Corrected Text:</p><p>A four-point probe system was used to investigate the electrical performance of the sintered copper films against plasma time or temperature. As shown in Figure 4d, e, the resistivity of the film decreases with increasing time or temperature. For plasma sintering, it decreases from (107.88 ± 7.49) × 10⁻⁴ Ω cm to (19.17 ± 0.04) × 10⁻⁴ Ω cm after 30 min, and for thermal sintering, it decreases from (52.15 ± 0.37) × 10⁻⁴ Ω cm at 130 °C to (25.79 ± 0.4) ×10⁻⁴ Ω cm at 170 °C.</p><p>The decrease in resistivity with temperature or time is easily understood since organic matters mostly evaporate or/and decompose, and copper particles are better connected. In comparison with thermal sintering, plasma sintering achieves comparable electrical performance in less time, as proved by resistivities obtained at 150 °C for 60 min (30.11 × 10⁻⁴ Ω cm) and 300 W for 15 min (33.68 × 10⁻⁴ Ω cm).</p><p>Corrected Figure 7:</p><p></p><p>Figure 7. a) The fabricated antenna prototype, b,c) test in an anechoic chamber, d) the measured reflection coefficient and e,f) radiation patterns at 2 and 8.2 GHz, g) the reflection coefficients against bending radii and h) the change in resistivity after bending</p>","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"11 3","pages":""},"PeriodicalIF":5.3,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://onlinelibrary.wiley.com/doi/epdf/10.1002/aelm.202400915","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143084126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Soft and Stretchable Thienopyrroledione-Based Polymers via Direct Arylation","authors":"Angela Lin, Lorenzo Guio, Garrett LeCroy, Stanley Lo, Adnan Sharif, Yunfei Wang, Alberto Salleo, Xiaodan Gu, Christine K. Luscombe, Helen Tran","doi":"10.1002/aelm.202400756","DOIUrl":"https://doi.org/10.1002/aelm.202400756","url":null,"abstract":"<i>π</i>-conjugated polymers (CPs) that are concurrently soft and stretchable are needed for deformable electronics. Molecular-level modification of indacenodithiophene (IDT) copolymers, a class of CPs that exhibit high hole mobilities (<span data-altimg=\"/cms/asset/f3aabf82-75e4-41f3-a261-603f77a3fe6c/aelm1073-math-0001.png\"></span><mjx-container ctxtmenu_counter=\"4\" ctxtmenu_oldtabindex=\"1\" jax=\"CHTML\" role=\"application\" sre-explorer- style=\"font-size: 103%; position: relative;\" tabindex=\"0\"><mjx-math aria-hidden=\"true\" location=\"graphic/aelm1073-math-0001.png\"><mjx-semantics><mjx-mi data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic- data-semantic-role=\"greekletter\" data-semantic-speech=\"mu\" data-semantic-type=\"identifier\"><mjx-c></mjx-c></mjx-mi></mjx-semantics></mjx-math><mjx-assistive-mml display=\"inline\" unselectable=\"on\"><math altimg=\"urn:x-wiley:2199160X:media:aelm1073:aelm1073-math-0001\" display=\"inline\" location=\"graphic/aelm1073-math-0001.png\" xmlns=\"http://www.w3.org/1998/Math/MathML\"><semantics><mi data-semantic-=\"\" data-semantic-annotation=\"clearspeak:simple\" data-semantic-font=\"italic\" data-semantic-role=\"greekletter\" data-semantic-speech=\"mu\" data-semantic-type=\"identifier\">μ</mi>$mu $</annotation></semantics></math></mjx-assistive-mml></mjx-container>_<i>hole</i>), is an approach that can help realize intrinsically soft and stretchable CPs. Numerous examples of design strategies to adjust the stretchability of CPs exist, but imparting softness is comparatively less studied. In this study, a systematic molecular weight (MW) series is constructed on a promising candidate for soft CPs, poly(indacenodithiophene-<i>co</i>-thienopyrroledione) (p(IDT_C16-TPD_C8)), by optimizing direct arylation polymerization conditions in hopes of improving stretchability and <i>μ_hole</i> without significantly impacting softness. We found p(IDT_C16-TPD_C8) at a degree of polymerization of 32 shows high stretchability (crack onset strain, <i>CoS</i> &gt; 100%) without significantly impacting softness (elastic modulus, <i>E</i> = 32 MPa), which to the best of our knowledge outperforms previously reported stretchable and soft CPs. To further study how molecular-level modifications impact polymer properties, a MW series of a new extended donor unit polymer, poly(indacenodithienothiophene-<i>co</i>-thienopyrroledione) (p(IDTT_C16-TPD_C8)), was synthesized. The IDTT_C16 copolymers did not result in a greater average <i>μ_hole</i> when comparing between p(IDTT_C16-TPD_C8) and p(IDT_C16-TPD_C8) despite their higher crystallinity observed by GIWAXS. While these findings warrant further investigation, this study points toward unique charge transport properties of IDT-based polymers.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"1 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143124526","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Micro-Engraving UV-Sensitive Thin-Film Transistor from Metal–Metal Oxide Nanoparticles with Band-Gap Engineering","authors":"U Jeong Yang, Sehyun Park, Woosung Choi, Vladimir V. Tsukruk","doi":"10.1002/aelm.202400798","DOIUrl":"https://doi.org/10.1002/aelm.202400798","url":null,"abstract":"As known, n-type inorganic semiconductor nanoparticles such as zinc oxide nanoparticles have been explored in various sensing applications, which demand high-density electronic elements placement for rapid operation. Herein, high-resolution designs of conductive channels of noble metal-doped zinc oxide nanoparticles is demonstrated using an engraving transfer printing process and silver metal doping approach. Such thin-film transistors with reduced feature size to 2 µm fabricated exhibited significantly enhanced electron mobility up 3.46 × 10⁻² cm² V⁻¹ s⁻¹ and light sensitivity. Furthermore, the integration of this micropatterning technology and metal doping in thin-film transistors is utilized for control of current–voltage characteristics under the ultraviolet radiation with high sensitivity. It is suggested that this approach to design of doped inorganic nanoparticle channels paves the way for high-density thin-film transistors suitable for optoelectronic circuit, UV photodetectors and neuromorphic computing systems.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"61 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143077113","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

{"title":"Mobility-Lifetime Products in Organic Infrared Photodiodes with Peak Absorption at 1550 nm","authors":"Bogyeom Seo, Tyler Bills, Paramasivam Mahalingavelar, Woojo Kim, Hyeong Ju Eun, Jong H. Kim, Jason D. Azoulay, Tse Nga Ng","doi":"10.1002/aelm.202400816","DOIUrl":"https://doi.org/10.1002/aelm.202400816","url":null,"abstract":"Infrared photodiodes based on organic semiconductors are promising for low-cost sensors that operate at room temperature. However, their realization remains hampered by poor device efficiency. Here, performance limitations are analyzed by evaluating the mobility-lifetime products and charge collection efficiency of devices operating in the shortwave infrared with a peak absorption at 1550 nm. Through complementary impedance and current-voltage measurements on devices with different donor-to-acceptor semiconductor ratios, a trade-off between mobility and recombination time and the need to balance between transport and interfacial charge transfer are observed. Thus, this study revisits the mobility-lifetime metric to shed new light on charge collection constraints in organic infrared photodiodes.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"123 1","pages":""},"PeriodicalIF":6.2,"publicationDate":"2025-02-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143077095","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}