While 2D high-κ dielectrics are promising for extending Moore's Law, their adoption is hindered by limited crystallinity, low dielectric constant, and high-temperature processing incompatible with back-end-of-line integration. To overcome these challenges, we developed a low-temperature (170°C) chemical vapor deposition technique to grow single-crystalline 2D bismuth oxychloride (BiOCl), achieving large-area flakes with an average edge length of 31.5 µm. The resulting BiOCl-based metal–insulator–metal devices exhibit a high dielectric constant of 16.9 and a high breakdown field of 11.2 MV cm−1. When integrated as the gate dielectric in a back-gated MoS2 field-effect transistor, BiOCl enables outstanding electrical performance: an on/off current ratio of 108, a near-ideal subthreshold swing of 61 mV dec−1, a low normalized hysteresis of 1.39 × 10−2 V (MV cm−1)−1 at 0.04 V s−1, a field-effect mobility of 17.9 cm2 V−1 s−1, and a low interface trap density of 5.82 × 1010 cm−2 eV−1. The devices also show robust stability, with no degradation in the on/off ratio and only a slight threshold voltage shift after 3 months. This work establishes 2D BiOCl as a leading high-κ dielectric candidate, offering a practical route to overcoming scaling limits and enabling next-generation low-power nanoelectronics.
{"title":"Water-Assisted Growth of High-κ BiOCl Dielectric at Low-Temperature for 2D Transistors","authors":"Banglin Hu, Weiqi Li, Lei Tang, Zhengyang Cai, Caiting Liang, Xiaowei Wang, Lingan Kong, Huihui Han, Zhongchao Wei, Qijie Liang","doi":"10.1002/adfm.74968","DOIUrl":"https://doi.org/10.1002/adfm.74968","url":null,"abstract":"While 2D high-<i>κ</i> dielectrics are promising for extending Moore's Law, their adoption is hindered by limited crystallinity, low dielectric constant, and high-temperature processing incompatible with back-end-of-line integration. To overcome these challenges, we developed a low-temperature (170°C) chemical vapor deposition technique to grow single-crystalline 2D bismuth oxychloride (BiOCl), achieving large-area flakes with an average edge length of 31.5 µm. The resulting BiOCl-based metal–insulator–metal devices exhibit a high dielectric constant of 16.9 and a high breakdown field of 11.2 MV cm<sup>−1</sup>. When integrated as the gate dielectric in a back-gated MoS<sub>2</sub> field-effect transistor, BiOCl enables outstanding electrical performance: an on/off current ratio of 10<sup>8</sup>, a near-ideal subthreshold swing of 61 mV dec<sup>−1</sup>, a low normalized hysteresis of 1.39 × 10<sup>−2</sup> V (MV cm<sup>−1</sup>)<sup>−1</sup> at 0.04 V s<sup>−1</sup>, a field-effect mobility of 17.9 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup>, and a low interface trap density of 5.82 × 10<sup>10</sup> cm<sup>−2</sup> eV<sup>−1</sup>. The devices also show robust stability, with no degradation in the on/off ratio and only a slight threshold voltage shift after 3 months. This work establishes 2D BiOCl as a leading high-<i>κ</i> dielectric candidate, offering a practical route to overcoming scaling limits and enabling next-generation low-power nanoelectronics.","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"51 1","pages":""},"PeriodicalIF":19.0,"publicationDate":"2026-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147478054","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Xiaohan Ma, Zhaohan Li, Masoumeh Amirifard, Quinn Ennis, Haoqing Su, Jianwen Shang, Wentao Zhang, Rito Yanagi, Yeonjoo Lee, Uwe Kortshagen, Shu Hu
Quantum dot (QD) photocatalysts, with tunable bandgaps enabled by quantum confinement, are promising for photocatalytic hydrogen evolution reactions (HER), but developing an efficient, low-cost, and stable porous support with high catalyst loading capacity and high quantum efficiency remains a challenge. We use atomic layer deposition (ALD) to double-coat Si QD films with 2 nm Al2O3 and 5 nm TiO2, inhibiting native oxide formation and suppressing Si-OH formation in water. Si QD films with Al2O3 interlayers show higher HER rates (0.15 µmol cm−2 h−1) than those with only TiO2 coating (0.08 µmol cm−2 h−1) and can maintain their activity for at least 72 h of photocatalytic H2 production. A superior internal quantum efficiency of 14.1 % at 400 ± 10 nm is demonstrated using Al2O3/TiO2 double-layer coated Si QD photocatalysts under optimal operation. This research demonstrates that ALD TiO2 coating of appropriate thickness enables efficient band-like hole charge transport and facilitates electron hopping, while the Al2O3 coating suppresses electron–hole recombination and facilitates charge transfer via tunneling. These findings provide a foundation for developing efficient, stable few-nm particulate photocatalysts for light-driven catalysis.
{"title":"Enhanced Photocatalytic Charge Separation in Coating-Protected Porous Silicon Quantum Dot Films With Stability Approaching 100 Hours","authors":"Xiaohan Ma, Zhaohan Li, Masoumeh Amirifard, Quinn Ennis, Haoqing Su, Jianwen Shang, Wentao Zhang, Rito Yanagi, Yeonjoo Lee, Uwe Kortshagen, Shu Hu","doi":"10.1002/adfm.202502774","DOIUrl":"https://doi.org/10.1002/adfm.202502774","url":null,"abstract":"Quantum dot (QD) photocatalysts, with tunable bandgaps enabled by quantum confinement, are promising for photocatalytic hydrogen evolution reactions (HER), but developing an efficient, low-cost, and stable porous support with high catalyst loading capacity and high quantum efficiency remains a challenge. We use atomic layer deposition (ALD) to double-coat Si QD films with 2 nm Al<sub>2</sub>O<sub>3</sub> and 5 nm TiO<sub>2</sub>, inhibiting native oxide formation and suppressing Si-OH formation in water. Si QD films with Al<sub>2</sub>O<sub>3</sub> interlayers show higher HER rates (0.15 µmol cm<sup>−2</sup> h<sup>−1</sup>) than those with only TiO<sub>2</sub> coating (0.08 µmol cm<sup>−2</sup> h<sup>−1</sup>) and can maintain their activity for at least 72 h of photocatalytic H<sub>2</sub> production. A superior internal quantum efficiency of 14.1 % at 400 ± 10 nm is demonstrated using Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub> double-layer coated Si QD photocatalysts under optimal operation. This research demonstrates that ALD TiO<sub>2</sub> coating of appropriate thickness enables efficient band-like hole charge transport and facilitates electron hopping, while the Al<sub>2</sub>O<sub>3</sub> coating suppresses electron–hole recombination and facilitates charge transfer via tunneling. These findings provide a foundation for developing efficient, stable few-nm particulate photocatalysts for light-driven catalysis.","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"12 1","pages":""},"PeriodicalIF":19.0,"publicationDate":"2026-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147478863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Flexible thermoelectric generators (TEGs) capable of conformal contact with curved heat sources, offering a promising approach for efficiently converting body heat into electrical energy to power wearable electronics. However, existing TEG typically suffer from inadequate mechanical flexibility, limited thermal conductivity efficiency, and insufficient conformability to complex geometries. Herein, we present a self-powered wearable TEG for continuous health monitoring and thermal perception. A high thermal conductivity elastic composite (Ecoflex/EGaIn/GNSs) overcomes the flexibility-thermal management trade-off, achieving 1.45 W·m−1·K−1 and 735.5% strain. The optimized device exhibits superior output performance, delivering an output voltage of 494.81 mV and a power density of 12.96 mW/cm2 under a temperature difference of 35 K. The stretchable Ecoflex substrate combined with a serpentine electrode design effectively enhances mechanical reliability and enables intimate contact with complex 3D surfaces. Demonstrated applications encompass self-powered smartwatches, health monitoring devices, and thermal sensing gloves for temperature warning. This work establishes a compelling pathway toward adaptive thermoelectric (TE) electronic skin for next-generation human-machine interactive systems.
{"title":"High-Compliance, Self-Sustained Flexible Thermoelectric Systems for Wearable Biosignal Tracking and Tactile Feedback","authors":"Xingzhong Zhang, Shijie Fang, Sulin Hua, Zhihua Xiong, Rui Xiong","doi":"10.1002/adfm.75016","DOIUrl":"https://doi.org/10.1002/adfm.75016","url":null,"abstract":"Flexible thermoelectric generators (TEGs) capable of conformal contact with curved heat sources, offering a promising approach for efficiently converting body heat into electrical energy to power wearable electronics. However, existing TEG typically suffer from inadequate mechanical flexibility, limited thermal conductivity efficiency, and insufficient conformability to complex geometries. Herein, we present a self-powered wearable TEG for continuous health monitoring and thermal perception. A high thermal conductivity elastic composite (Ecoflex/EGaIn/GNSs) overcomes the flexibility-thermal management trade-off, achieving 1.45 W·m<sup>−1</sup>·K<sup>−1</sup> and 735.5% strain. The optimized device exhibits superior output performance, delivering an output voltage of 494.81 mV and a power density of 12.96 mW/cm<sup>2</sup> under a temperature difference of 35 K. The stretchable Ecoflex substrate combined with a serpentine electrode design effectively enhances mechanical reliability and enables intimate contact with complex 3D surfaces. Demonstrated applications encompass self-powered smartwatches, health monitoring devices, and thermal sensing gloves for temperature warning. This work establishes a compelling pathway toward adaptive thermoelectric (TE) electronic skin for next-generation human-machine interactive systems.","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"6 1","pages":""},"PeriodicalIF":19.0,"publicationDate":"2026-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147478857","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Seongwon Yoon, Kangsik Cho, Sungmin Park, Kyeongmin Kim, Hyungju Ahn, Junhyeong Kim, Ahyeon Jin, Uijoon Lee, Yoon Hee Jang, Yongseok Jun, Hae Jung Son
Self-assembled monolayers (SAMs) have emerged as promising hole-transporting layers (HTLs) for organic photovoltaics (OPVs). However, their practical application is often hindered by inherent aggregation issues and the difficulty of forming uniform thin films over large areas. To overcome these limitations, we developed a novel interfacial modification process using nicotinic hydrazide (NH) designed to eliminate residual SAM aggregates. We demonstrate that NH effectively eliminates the aggregated 2PACz by forming an energetically favorable complex with the phosphonic acid groups, yielding an uniform and aggregate-free SAM layer. Comprehensive characterization confirms that this treatment enhances film quality and surface wettability, thereby improving the HTL/active layer interfacial contact. Integrating this optimized SAM into OPV devices leads to significantly improved efficiency of 15.38% using a blade-coated 1 cm2 active area, primarily due to improved charge extraction and reduced trap-assisted recombination, which enhance both open-circuit voltage and fill factor. Furthermore, the superior uniformity and reproducibility of NH-treated HTL facilitates successful large-area fabrication. As a result, the power conversion efficiency (PCE) of OPV modules are enhanced from 14.07% to 15.02%, and the resulting perovskite-organic tandem module achieves a PCE of 19.89% at 16.41 cm2 active area, demonstrating a robust pathway for high-performance scalable photovoltaics.
{"title":"Interfacial Modulation for High-Efficiency Large-Area Organic Photovoltaics and Perovskite-Organic Tandem Solar Modules","authors":"Seongwon Yoon, Kangsik Cho, Sungmin Park, Kyeongmin Kim, Hyungju Ahn, Junhyeong Kim, Ahyeon Jin, Uijoon Lee, Yoon Hee Jang, Yongseok Jun, Hae Jung Son","doi":"10.1002/adfm.202532203","DOIUrl":"https://doi.org/10.1002/adfm.202532203","url":null,"abstract":"Self-assembled monolayers (SAMs) have emerged as promising hole-transporting layers (HTLs) for organic photovoltaics (OPVs). However, their practical application is often hindered by inherent aggregation issues and the difficulty of forming uniform thin films over large areas. To overcome these limitations, we developed a novel interfacial modification process using nicotinic hydrazide (NH) designed to eliminate residual SAM aggregates. We demonstrate that NH effectively eliminates the aggregated 2PACz by forming an energetically favorable complex with the phosphonic acid groups, yielding an uniform and aggregate-free SAM layer. Comprehensive characterization confirms that this treatment enhances film quality and surface wettability, thereby improving the HTL/active layer interfacial contact. Integrating this optimized SAM into OPV devices leads to significantly improved efficiency of 15.38% using a blade-coated 1 cm<sup>2</sup> active area, primarily due to improved charge extraction and reduced trap-assisted recombination, which enhance both open-circuit voltage and fill factor. Furthermore, the superior uniformity and reproducibility of NH-treated HTL facilitates successful large-area fabrication. As a result, the power conversion efficiency (PCE) of OPV modules are enhanced from 14.07% to 15.02%, and the resulting perovskite-organic tandem module achieves a PCE of 19.89% at 16.41 cm<sup>2</sup> active area, demonstrating a robust pathway for high-performance scalable photovoltaics.","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"1 1","pages":""},"PeriodicalIF":19.0,"publicationDate":"2026-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147478861","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Dayong Ren, Chuqi Zhang, Teng Ma, Jiaqi Wang, Jing Ju, Xiaofan Cao, Ya Yan, Ye Li, Yin Fan, Fuqiang Huang
Ultra-stretchable conductive elastomers with low-hysteresis recovery and anti-creep capability are indispensable for high-fidelity wearable sensors and human-machine interaction systems. Conventional carbon nanotube (CNTs)-based elastomers rely on weak physical interactions between CNTs and polymer matrices, failing to achieve robust chemical bonding and thus suffering from severe interfacial slippage. Here, we report a novel dechlorination-triggered nano-welding strategy to construct a 3D C─C covalent bonding network between CNTs and silicone polymers. Through thermodynamically favorable dechlorination of polyvinyl chloride (PVC)-derived chlorinated graphene-decorated CNTs (Cl-G/CNTs), a nano-welded interface is in-situ formed via synchronous covalent linkage and nanoscale mechanical interlocking. The resulting conductive elastomer exhibits exceptional stretchability of more than 870%, low-hysteresis recovery of 99.9%@25% strain, remarkable anti-creep performance of <0.14%, and exceptional mechanical durability (>10000 cycles). This high-performance elastomer has been successfully fabricated into high-resolution sensors, including wearable physiological monitors and an underwater piezometer with reliable depth-resolving capability (∼100 Pa). Our innovation breaks the intrinsic trade-off between organic–inorganic interfacial integration and mechanical-electrical synergy, establishes an ultra-stretchable and low-hysteresis conductive elastomer for high-fidelity wearable sensing.
{"title":"Dechlorination-Triggered Nano-Welding: A Universal Strategy for Ultra-Stretchable, Low-Hysteresis Conductive Elastomer","authors":"Dayong Ren, Chuqi Zhang, Teng Ma, Jiaqi Wang, Jing Ju, Xiaofan Cao, Ya Yan, Ye Li, Yin Fan, Fuqiang Huang","doi":"10.1002/adfm.74786","DOIUrl":"https://doi.org/10.1002/adfm.74786","url":null,"abstract":"Ultra-stretchable conductive elastomers with low-hysteresis recovery and anti-creep capability are indispensable for high-fidelity wearable sensors and human-machine interaction systems. Conventional carbon nanotube (CNTs)-based elastomers rely on weak physical interactions between CNTs and polymer matrices, failing to achieve robust chemical bonding and thus suffering from severe interfacial slippage. Here, we report a novel dechlorination-triggered nano-welding strategy to construct a 3D C─C covalent bonding network between CNTs and silicone polymers. Through thermodynamically favorable dechlorination of polyvinyl chloride (PVC)-derived chlorinated graphene-decorated CNTs (Cl-G/CNTs), a nano-welded interface is in-situ formed via synchronous covalent linkage and nanoscale mechanical interlocking. The resulting conductive elastomer exhibits exceptional stretchability of more than 870%, low-hysteresis recovery of 99.9%@25% strain, remarkable anti-creep performance of <0.14%, and exceptional mechanical durability (>10000 cycles). This high-performance elastomer has been successfully fabricated into high-resolution sensors, including wearable physiological monitors and an underwater piezometer with reliable depth-resolving capability (∼100 Pa). Our innovation breaks the intrinsic trade-off between organic–inorganic interfacial integration and mechanical-electrical synergy, establishes an ultra-stretchable and low-hysteresis conductive elastomer for high-fidelity wearable sensing.","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"231 1","pages":""},"PeriodicalIF":19.0,"publicationDate":"2026-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147479022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sebastiano Strangio, Elisabetta Dimaggio, Damiano Marian, Alessandro Catania, Alejandro Toral-Lopez, Francesco Pieri, Giuseppe Iannaccone, Gianluca Fiori
The widespread adoption of interconnected architectures, ranging from cloud systems to energy-limited IoT and edge nodes, is redefining the challenges of hardware security, where trust must be physically anchored in the hardware itself, minimizing reliance on stored digital keys or power-hungry post-processing. True Random Number Generators and Physical Unclonable Functions constitute the fundamental building blocks for secure entropy generation and device authentication. CMOS-based implementations have reached a high level of maturity, achieving remarkable progress in integration, stability, and scalability through sophisticated circuit-level design strategies. However, further improvements are increasingly constrained by the limited physical entropy available within silicon-based technologies. In contrast, emerging materials and device platforms, such as resistive and ferroelectric memories, 2D semiconductors, and electrolyte-gated transistors offer richer stochastic dynamics and intrinsic variability, providing new degrees of freedom for entropy harvesting. This review surveys recent advances in this rapidly evolving field, emphasizing the interplay among material physics, device behavior, and circuit design, and highlights unified architectures that co-generate entropy and identity within a single chip, leading to secure and energy-efficient hardware for future IoT and edge platforms.
{"title":"Advanced Materials-Based Technologies for Security and Cryptographic Applications: Opportunities and Challenges","authors":"Sebastiano Strangio, Elisabetta Dimaggio, Damiano Marian, Alessandro Catania, Alejandro Toral-Lopez, Francesco Pieri, Giuseppe Iannaccone, Gianluca Fiori","doi":"10.1002/adfm.202529572","DOIUrl":"https://doi.org/10.1002/adfm.202529572","url":null,"abstract":"The widespread adoption of interconnected architectures, ranging from cloud systems to energy-limited IoT and edge nodes, is redefining the challenges of hardware security, where trust must be physically anchored in the hardware itself, minimizing reliance on stored digital keys or power-hungry post-processing. True Random Number Generators and Physical Unclonable Functions constitute the fundamental building blocks for secure entropy generation and device authentication. CMOS-based implementations have reached a high level of maturity, achieving remarkable progress in integration, stability, and scalability through sophisticated circuit-level design strategies. However, further improvements are increasingly constrained by the limited physical entropy available within silicon-based technologies. In contrast, emerging materials and device platforms, such as resistive and ferroelectric memories, 2D semiconductors, and electrolyte-gated transistors offer richer stochastic dynamics and intrinsic variability, providing new degrees of freedom for entropy harvesting. This review surveys recent advances in this rapidly evolving field, emphasizing the interplay among material physics, device behavior, and circuit design, and highlights unified architectures that co-generate entropy and identity within a single chip, leading to secure and energy-efficient hardware for future IoT and edge platforms.","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"6 1","pages":""},"PeriodicalIF":19.0,"publicationDate":"2026-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147479024","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
By Tianyu Tai, Ying Guo, Kun Zheng, Heng Zhou, Hongbo Gu
The electromagnetic wave (EMW) absorption at low-frequency range of a material is constrained by the Snock limit due to its low natural resonance frequency (fr). Herein, we develop a nitrogen-doped hollow soft-magnetic alloy coated carbon composites (CoNi@NC) by enhancement of fr and optimization of impedance matching to break through the Snock limit, fulfilling an EMW absorption in n77 (3.3–4.2 GHz), n78 (3.3–3.8 GHz), and n79 (4.4–5.0 GHz) of the whole 5G bands. The multiple heterogeneous interfaces in our composites are constructed to regulate their dielectric loss (ε′′), and defect engineering is designed to control magnetic loss (µ′′) for the formation of a magnetic-dielectric synergistic loss system, which significantly enhances the fr and optimizes the impedance matching. Ultimately, it achieves a superior reflection loss of −47.66 dB and a low-frequency effective absorption bandwidth of 2.21 GHz (2.95–5.16 GHz). Density functional theory calculations reveal that nitrogen atoms could gather electrons at the Fermi level of material and form an asymmetric structure, as well as influence magnetic domains, resulting in a 180% increase in µ′′ of CoNi@NC compared to pure CoNi. This work offers a strategy for preparation of multi-functional materials to realize EMW absorption application in 5G Terminal.
{"title":"Nitrogen Doping Regulated Hollow Soft-Magnetic Alloy/Carbon Composites to Break Through Snoek Limit for Total Absorption of Electromagnetic Waves in n77, n78, and n79 of 5G Bands","authors":"By Tianyu Tai, Ying Guo, Kun Zheng, Heng Zhou, Hongbo Gu","doi":"10.1002/adfm.74997","DOIUrl":"https://doi.org/10.1002/adfm.74997","url":null,"abstract":"The electromagnetic wave (EMW) absorption at low-frequency range of a material is constrained by the Snock limit due to its low natural resonance frequency (<i>f<sub>r</sub></i>). Herein, we develop a nitrogen-doped hollow soft-magnetic alloy coated carbon composites (CoNi@NC) by enhancement of <i>f<sub>r</sub></i> and optimization of impedance matching to break through the Snock limit, fulfilling an EMW absorption in n77 (3.3–4.2 GHz), n78 (3.3–3.8 GHz), and n79 (4.4–5.0 GHz) of the whole 5G bands. The multiple heterogeneous interfaces in our composites are constructed to regulate their dielectric loss (<i>ε′′</i>), and defect engineering is designed to control magnetic loss (<i>µ′′</i>) for the formation of a magnetic-dielectric synergistic loss system, which significantly enhances the <i>f<sub>r</sub></i> and optimizes the impedance matching. Ultimately, it achieves a superior reflection loss of −47.66 dB and a low-frequency effective absorption bandwidth of 2.21 GHz (2.95–5.16 GHz). Density functional theory calculations reveal that nitrogen atoms could gather electrons at the Fermi level of material and form an asymmetric structure, as well as influence magnetic domains, resulting in a 180% increase in <i>µ′′</i> of CoNi@NC compared to pure CoNi. This work offers a strategy for preparation of multi-functional materials to realize EMW absorption application in 5G Terminal.","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"33 1","pages":""},"PeriodicalIF":19.0,"publicationDate":"2026-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147478860","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shufeng Song, Wei Xue, Zhixu Long, Hongyang Shan, Chaohe Xu, Guangsheng Huang, Ning Hu
Solid-state batteries (SSBs) are promising next-generation energy storage devices due to their high energy densities and inherent safety. However, achieving fast charging in energy-dense SSBs remains a significant challenge, primarily limited by poor solid–solid interfacial contact, high interfacial resistances, and sluggish redox kinetics. Here, we address this challenge by reporting a solid-state Li–Se2I2 battery that incorporates a low-melting-point (∼56°C) molecular liquid, Se2I2, to create a unique liquid–solid electrochemical interface. We elucidate the underlying six-electron conversion mechanism and probe its redox dynamics. This engineered interface enables exceptional fast-charging performance. The solid-state Li–Se2I2 battery delivers a high specific capacity of ∼536 mAh g−1 at 0.5C (70°C) and retains 115 mAh g−1 at an ultrahigh rate of 20C. Moreover, it exhibits a stable electrolyte resistance and an ultralow charge transfer resistance, leading to remarkable long-term cycling stability, retaining 79% capacity retention over 1200 cycles at 10C, equivalent to a high current density of 5.974 mA cm−2. This work on Se2I2 electrochemistry establishes a novel pathway for developing fast-charging and energy-dense solid-state batteries.
固态电池（SSBs）因其高能量密度和固有的安全性而成为下一代储能设备。然而，在能量密集的固态电池中实现快速充电仍然是一个重大挑战，主要受到固体-固体界面接触差、界面电阻高和氧化还原动力学缓慢的限制。在这里，我们通过报告一种固态Li-Se2I2电池来解决这一挑战，该电池包含低熔点（~ 56°C）分子液体Se2I2，以创建独特的液-固电化学界面。我们阐明了潜在的六电子转化机制，并探讨了其氧化还原动力学。这种设计接口使卓越的快速充电性能。固态Li-Se2I2电池在0.5C（70°C）下可提供高达~ 536 mAh g - 1的高比容量，并在20C的超高倍率下保持115 mAh g - 1。此外，它具有稳定的电解质电阻和超低的电荷转移电阻，具有显著的长期循环稳定性，在10C下1200次循环中保持79%的容量保持率，相当于5.974 mA cm−2的高电流密度。这项关于Se2I2电化学的研究为开发快速充电和能量密集的固态电池开辟了一条新的途径。
{"title":"Liquid–Solid Conversion Chemistry Enables Fast-Charging Solid-State Li–Se2I2 Batteries","authors":"Shufeng Song, Wei Xue, Zhixu Long, Hongyang Shan, Chaohe Xu, Guangsheng Huang, Ning Hu","doi":"10.1002/adfm.74976","DOIUrl":"https://doi.org/10.1002/adfm.74976","url":null,"abstract":"Solid-state batteries (SSBs) are promising next-generation energy storage devices due to their high energy densities and inherent safety. However, achieving fast charging in energy-dense SSBs remains a significant challenge, primarily limited by poor solid–solid interfacial contact, high interfacial resistances, and sluggish redox kinetics. Here, we address this challenge by reporting a solid-state Li–Se<sub>2</sub>I<sub>2</sub> battery that incorporates a low-melting-point (∼56°C) molecular liquid, Se<sub>2</sub>I<sub>2</sub>, to create a unique liquid–solid electrochemical interface. We elucidate the underlying six-electron conversion mechanism and probe its redox dynamics. This engineered interface enables exceptional fast-charging performance. The solid-state Li–Se<sub>2</sub>I<sub>2</sub> battery delivers a high specific capacity of ∼536 mAh g<sup>−1</sup> at 0.5C (70°C) and retains 115 mAh g<sup>−1</sup> at an ultrahigh rate of 20C. Moreover, it exhibits a stable electrolyte resistance and an ultralow charge transfer resistance, leading to remarkable long-term cycling stability, retaining 79% capacity retention over 1200 cycles at 10C, equivalent to a high current density of 5.974 mA cm<sup>−2</sup>. This work on Se<sub>2</sub>I<sub>2</sub> electrochemistry establishes a novel pathway for developing fast-charging and energy-dense solid-state batteries.","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"24 1","pages":""},"PeriodicalIF":19.0,"publicationDate":"2026-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147478856","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mi Ri Nae Lee, Hyowon Jang, Swarup Biswas, Hyeok Kim
Growing concerns about electronic waste underscore the need for materials that combine high performance with environmental sustainability. Here, we report an organic thin-film transistor (OTFT) that incorporates a water-processed gum arabic (GA) dielectric, a natural, biodegradable resin derived from Acacia senegal, to enable eco-friendly device fabrication. The GA dielectric forms defect-free films directly from aqueous solution and exhibits a dielectric constant of approximately 27 at 1 kHz. By optimizing GA concentration, we obtain uniform and stable dielectric layers that substantially enhance charge transport in dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) semiconductors, yielding p-type OTFTs operating at ±3 V with high mobilities up to 20.72 cm2 V−1 s−1 and negligible hysteresis. Comparative analyses show that GA facilitates improved molecular ordering of DNTT and suppresses trap formation, outperforming conventional PMMA dielectrics. Upon immersion in water, the GA layer dissolves rapidly (within 30 s), leaving the substrate pristine and fulfilling key criteria for transient electronics. This combination of outstanding electrical performance and complete aqueous degradability highlights the potential of GA for scalable fabrication of green, high-performance electronic devices designed to disappear on demand, supporting urgent efforts toward sustainable and transient electronic technologies.
{"title":"WaterProcessed Gum Arabic Dielectric for Low-Voltage, High-Mobility, and Transient Organic Thin-Film Transistors","authors":"Mi Ri Nae Lee, Hyowon Jang, Swarup Biswas, Hyeok Kim","doi":"10.1002/adfm.202532050","DOIUrl":"https://doi.org/10.1002/adfm.202532050","url":null,"abstract":"Growing concerns about electronic waste underscore the need for materials that combine high performance with environmental sustainability. Here, we report an organic thin-film transistor (OTFT) that incorporates a water-processed gum arabic (GA) dielectric, a natural, biodegradable resin derived from <i>Acacia senegal</i>, to enable eco-friendly device fabrication. The GA dielectric forms defect-free films directly from aqueous solution and exhibits a dielectric constant of approximately 27 at 1 kHz. By optimizing GA concentration, we obtain uniform and stable dielectric layers that substantially enhance charge transport in dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) semiconductors, yielding p-type OTFTs operating at ±3 V with high mobilities up to 20.72 cm<sup>2</sup> V<sup>−1</sup> s<sup>−1</sup> and negligible hysteresis. Comparative analyses show that GA facilitates improved molecular ordering of DNTT and suppresses trap formation, outperforming conventional PMMA dielectrics. Upon immersion in water, the GA layer dissolves rapidly (within 30 s), leaving the substrate pristine and fulfilling key criteria for transient electronics. This combination of outstanding electrical performance and complete aqueous degradability highlights the potential of GA for scalable fabrication of green, high-performance electronic devices designed to disappear on demand, supporting urgent efforts toward sustainable and transient electronic technologies.","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"88 1","pages":""},"PeriodicalIF":19.0,"publicationDate":"2026-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147478862","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Anwesha Chatterjee, Stefanie S. M. Meier, Sara Trujillo, Andreas Möglich, Shrikrishnan Sankaran
Impaired angiogenesis is a central barrier in the treatment of chronic and deep tissue wounds, preventing progression through the normal healing cascade. While the combination of near infrared (NIR) photobiomodulation and pro-angiogenic growth factors has shown synergistic therapeutic benefit, the clinical translation of growth factor therapy is hindered by high cost, instability, and the need for localized dosing to avoid aberrant vasculature. Peptidomimetics such as the VEGF-derived QK peptide offer a more stable and predictable alternative, but still require a means for localized, tunable presentation. Here, we establish an engineered living material-based delivery system that responds to clinically relevant NIR light to produce and release a QK-Fusion protein directly at the target site. The probiotic Escherichia coli Nissle 1917 was engineered with an 800 nm-responsive optogenetic circuit and encapsulated within an optimized alginate core–shell hydrogel that ensures biocontainment while allowing controlled outward diffusion of the secreted peptide. The released peptide remains non-cytotoxic, capable of binding extracellular matrix analogs, and promotes angiogenesis in endothelial cultures and the chick chorioallantoic membrane assay. We thus establish a strategy for developing engineered living materials toward remote-controlled angiogenic stimulation.
{"title":"An Engineered Living Material With Pro-Angiogenic Activity Inducible by Near-Infrared Light","authors":"Anwesha Chatterjee, Stefanie S. M. Meier, Sara Trujillo, Andreas Möglich, Shrikrishnan Sankaran","doi":"10.1002/adfm.202530713","DOIUrl":"https://doi.org/10.1002/adfm.202530713","url":null,"abstract":"Impaired angiogenesis is a central barrier in the treatment of chronic and deep tissue wounds, preventing progression through the normal healing cascade. While the combination of near infrared (NIR) photobiomodulation and pro-angiogenic growth factors has shown synergistic therapeutic benefit, the clinical translation of growth factor therapy is hindered by high cost, instability, and the need for localized dosing to avoid aberrant vasculature. Peptidomimetics such as the VEGF-derived QK peptide offer a more stable and predictable alternative, but still require a means for localized, tunable presentation. Here, we establish an engineered living material-based delivery system that responds to clinically relevant NIR light to produce and release a QK-Fusion protein directly at the target site. The probiotic <i>Escherichia coli</i> Nissle 1917 was engineered with an 800 nm-responsive optogenetic circuit and encapsulated within an optimized alginate core–shell hydrogel that ensures biocontainment while allowing controlled outward diffusion of the secreted peptide. The released peptide remains non-cytotoxic, capable of binding extracellular matrix analogs, and promotes angiogenesis in endothelial cultures and the chick chorioallantoic membrane assay. We thus establish a strategy for developing engineered living materials toward remote-controlled angiogenic stimulation.","PeriodicalId":112,"journal":{"name":"Advanced Functional Materials","volume":"10 1","pages":""},"PeriodicalIF":19.0,"publicationDate":"2026-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"147478858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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