Pub Date : 2024-07-08DOI: 10.1149/2162-8777/ad6034
Zhi Gang Lv, wang lishi, Yafei Liu, Xinbin Hu, Z. Bu
Abstract: Dry-type electrochemical polishing (DECP) technology combines the mechanical action of resin particles with the electrochemical action of working solutions to enhance the results of existing treatments. Homogeneous polishing across the entire surface of the piece is the main advantage compared to mechanical polishing. This article utilizes this method to polish the surface of 304 stainless steel, resulting in a metal surface roughness (Ra) in the range of 1.23m to 98nm. This innovation expands the potential applications of 304 stainless steel in the medical and food industries. Energy dispersive X-ray spectroscopy (EDS) analysis cannot detect residual electrolyte components, and resin particles containing liquid electrolytes can effectively avoid the harmful substanc remain on the metal surface. Electrochemical analysis of polished sample shows that the Ecorr was -0.109V for DECP specific sample compared with -0.291V for initial sample, and the polishing process can be seen as the generation and removal of corrosion products.
{"title":"Investigation on the Dry-Type Electrochemical Polishing of 304 Stainless Steel with Ion-Exchange Resin Particles","authors":"Zhi Gang Lv, wang lishi, Yafei Liu, Xinbin Hu, Z. Bu","doi":"10.1149/2162-8777/ad6034","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6034","url":null,"abstract":"\u0000 Abstract: Dry-type electrochemical polishing (DECP) technology combines the mechanical action of resin particles with the electrochemical action of working solutions to enhance the results of existing treatments. Homogeneous polishing across the entire surface of the piece is the main advantage compared to mechanical polishing. This article utilizes this method to polish the surface of 304 stainless steel, resulting in a metal surface roughness (Ra) in the range of 1.23m to 98nm. This innovation expands the potential applications of 304 stainless steel in the medical and food industries. Energy dispersive X-ray spectroscopy (EDS) analysis cannot detect residual electrolyte components, and resin particles containing liquid electrolytes can effectively avoid the harmful substanc remain on the metal surface. Electrochemical analysis of polished sample shows that the Ecorr was -0.109V for DECP specific sample compared with -0.291V for initial sample, and the polishing process can be seen as the generation and removal of corrosion products.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141668911","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-08DOI: 10.1149/2162-8777/ad6036
Ajeet Gupta, Avneesh Kumar, Surbhi Surbhi, Mudit P. Srivastava, D. Rana
Zinc oxysulfide (ZnOS) nano-thin film has been deposited on a p-type silicon and glass substrate via the hydrothermal deposition method at a temperature of 200ºC. The crystallographic information and morphological analysis of zinc oxysulfide (ZnOS) thin film have been obtained using X-ray diffraction (XRD) patterns and field effect scanning electron microscopy (FESEM). The ZnOS thin film chemical composition was examined using energy-dispersive X-ray spectroscopy (EDX). Ultraviolet-visible (UV-Vis) and photoluminescence (PL) spectroscopy have been utilized for optical analysis. The electrical and electro-optical measurements of ZnOS thin film have been carried out by I-V characteristics in the visible light environment with a power density of 30 mW/cm2. Zinc oxysulfide (ZnOS) thin film was found to be an excellent example of simple responsive photodetection in visible light. The ZnOS thin film has a response time of 1.46 s and a recovery time is equal to 1.32 s. The specific detectivity of the deposited thin film was found to be 3.81×108 Jones. The responsivity of the deposited thin film is found 7.08×102 mA/W. Keywords: Zinc oxysulfide, hydrothermal method, heterojunction, photosensor.
氧化锌（ZnOS）纳米薄膜通过水热沉积法沉积在 p 型硅和玻璃衬底上，沉积温度为 200ºC。利用 X 射线衍射（XRD）图和场效应扫描电子显微镜（FESEM）获得了氧化锌（ZnOS）薄膜的晶体学信息和形态分析。利用能量色散 X 射线光谱（EDX）检测了氧化锌（ZnOS）薄膜的化学成分。紫外-可见（UV-Vis）和光致发光（PL）光谱用于光学分析。在功率密度为 30 mW/cm2 的可见光环境下，通过 I-V 特性对 ZnOS 薄膜进行了电学和电光测量。研究发现，氧化锌（ZnOS）薄膜是在可见光下进行简单响应光检测的极佳范例。ZnOS 薄膜的响应时间为 1.46 秒，恢复时间为 1.32 秒。沉积薄膜的响应率为 7.08×102 mA/W。关键词：氧化锌氧化锌 水热法 异质结 光传感器
{"title":"Facile Growth of Zinc Oxysulfide Nano Thin Film-based Visible Light Photosensor by Hydrothermal Method","authors":"Ajeet Gupta, Avneesh Kumar, Surbhi Surbhi, Mudit P. Srivastava, D. Rana","doi":"10.1149/2162-8777/ad6036","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6036","url":null,"abstract":"\u0000 Zinc oxysulfide (ZnOS) nano-thin film has been deposited on a p-type silicon and glass substrate via the hydrothermal deposition method at a temperature of 200ºC. The crystallographic information and morphological analysis of zinc oxysulfide (ZnOS) thin film have been obtained using X-ray diffraction (XRD) patterns and field effect scanning electron microscopy (FESEM). The ZnOS thin film chemical composition was examined using energy-dispersive X-ray spectroscopy (EDX). Ultraviolet-visible (UV-Vis) and photoluminescence (PL) spectroscopy have been utilized for optical analysis. The electrical and electro-optical measurements of ZnOS thin film have been carried out by I-V characteristics in the visible light environment with a power density of 30 mW/cm2. Zinc oxysulfide (ZnOS) thin film was found to be an excellent example of simple responsive photodetection in visible light. The ZnOS thin film has a response time of 1.46 s and a recovery time is equal to 1.32 s. The specific detectivity of the deposited thin film was found to be 3.81×108 Jones. The responsivity of the deposited thin film is found 7.08×102 mA/W. Keywords: Zinc oxysulfide, hydrothermal method, heterojunction, photosensor.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141667648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-08DOI: 10.1149/2162-8777/ad6032
A. Ashery, Samia Gad
We investigated here the electrical properties of the novel structure of PANI-PPy-GO-MWCNTs composite/MnO2/Fe3O4/n-Si. This structure has not been addressed in literature before, the manufacture of this novel structure is carried out using a simple technique. So, we introduce here a novel structure with a simple method of manufacture. The imaginary part of modulus M՝՝ has two behaviors, the first behavior at high and low frequency and the second behavior at mid frequency, so the M՝՝ gives two contrarian behaviors, The M՝՝ is a strong function of frequency and we can change the behavior of M՝՝ by change of frequencies. The Col – Col diagram of modulus has ideal figures at some voltages including two semicircles of grains and grain boundaries. The imaginary part of impedance Z՝՝ versus frequency creates peaks, the peaks shift toward the low frequencies. The novel here the Z՝՝ has positive and negative values, despite the Z՝՝ should have negative values only. The real part of impedance Z՝ keeps on without change at high frequencies and splits for all temperatures at low and mid frequencies. Some electrical properties such as barrier height ɸb,Wd the width of the depletion layer, Nss the density of states,
我们在此研究了 PANI-PPy-GO-MWCNTs 复合材料/MnO2/Fe3O4/n-Si 新型结构的电气性能。这种结构以前从未在文献中出现过，这种新型结构的制造采用了一种简单的技术。因此，我们在此介绍一种制造方法简单的新型结构。模量 M՝՝的虚部有两种行为，第一种行为发生在高频和低频，第二种行为发生在中频，因此 M՝՝有两种相反的行为，M՝՝是频率的强函数，我们可以通过改变频率来改变 M՝՝的行为。模量的 Col - Col 图在某些电压下具有理想的图形，包括晶粒和晶界的两个半圆。阻抗 Z՝՝的虚部与频率的关系产生峰值，峰值向低频移动。尽管 Z՝՝ 应该只有负值，但这里的新颖之处在于 Z՝՝ 有正值和负值。阻抗的实部 Z՝在高频时保持不变，而在中低频时则在所有温度下分裂。一些电气特性，如势垒高度ɸb、耗尽层宽度 Wd 和状态密度 Nss、
{"title":"Investigation of Electrical and Dielectrically Properties of a Novel Structure of PANI-PPy--GO-MWCNTs Composite/MnO2/Fe3O4/n-Si Structure","authors":"A. Ashery, Samia Gad","doi":"10.1149/2162-8777/ad6032","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6032","url":null,"abstract":"\u0000 We investigated here the electrical properties of the novel structure of PANI-PPy-GO-MWCNTs composite/MnO2/Fe3O4/n-Si. This structure has not been addressed in literature before, the manufacture of this novel structure is carried out using a simple technique. So, we introduce here a novel structure with a simple method of manufacture. The imaginary part of modulus M՝՝ has two behaviors, the first behavior at high and low frequency and the second behavior at mid frequency, so the M՝՝ gives two contrarian behaviors, The M՝՝ is a strong function of frequency and we can change the behavior of M՝՝ by change of frequencies. The Col – Col diagram of modulus has ideal figures at some voltages including two semicircles of grains and grain boundaries. The imaginary part of impedance Z՝՝ versus frequency creates peaks, the peaks shift toward the low frequencies. The novel here the Z՝՝ has positive and negative values, despite the Z՝՝ should have negative values only. The real part of impedance Z՝ keeps on without change at high frequencies and splits for all temperatures at low and mid frequencies. Some electrical properties such as barrier height ɸb,Wd the width of the depletion layer, Nss the density of states,","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141666855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
To improve the surface integrity of ZA27 alloy, a method of chemical mechanical polishing (CMP) considering the galvanic corrosion at the Zn/Al interface is proposed to treat the surface of ZA27 alloy. Firstly, the electrochemical experiment is carried out to study the influence of the pH, H2O2 concentration, and glycine concentration on corrosion potential between zinc and aluminum. Then the Taguchi method integrated with grey relation analysis and fuzzy inference are used to optimize the CMP parameters of ZA27 alloy. Finally, the prediction model of the MRR and surface roughness Ra is established using the mathematical regression analysis method. The experimental results showed that the minimum zinc-aluminum corrosion potential difference is 14 mV when the pH is 10, H2O2 concentration is 1 wt%, and glycine concentration is 0.4 wt%. The optimum CMP parameter is the polishing pressure of 34 kPa, the polishing plate's rotational speed of 70 rpm, and the abrasive particle concentration of 15 wt%. After polishing with the optimum CMP parameter, the MRR is 242 nm/min, and the surface roughness Ra is 13.91 nm. This study demonstrates that the CMP considering the galvanic corrosion at the Zn/Al interface is an effective method for treating ZA27 alloy surface.
{"title":"Experimental Investigation on Chemical Mechanical Polishing of ZA27 Alloy Considering Galvanic Corrosion at Zn/Al Interface","authors":"Changjiang Qin, Jian Pan, Zihua Hu, Kechang Zhang, Rundong Shen, Shengqiang Jiang, Xiaogao Chen, Meijiao Mao","doi":"10.1149/2162-8777/ad6033","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6033","url":null,"abstract":"\u0000 To improve the surface integrity of ZA27 alloy, a method of chemical mechanical polishing (CMP) considering the galvanic corrosion at the Zn/Al interface is proposed to treat the surface of ZA27 alloy. Firstly, the electrochemical experiment is carried out to study the influence of the pH, H2O2 concentration, and glycine concentration on corrosion potential between zinc and aluminum. Then the Taguchi method integrated with grey relation analysis and fuzzy inference are used to optimize the CMP parameters of ZA27 alloy. Finally, the prediction model of the MRR and surface roughness Ra is established using the mathematical regression analysis method. The experimental results showed that the minimum zinc-aluminum corrosion potential difference is 14 mV when the pH is 10, H2O2 concentration is 1 wt%, and glycine concentration is 0.4 wt%. The optimum CMP parameter is the polishing pressure of 34 kPa, the polishing plate's rotational speed of 70 rpm, and the abrasive particle concentration of 15 wt%. After polishing with the optimum CMP parameter, the MRR is 242 nm/min, and the surface roughness Ra is 13.91 nm. This study demonstrates that the CMP considering the galvanic corrosion at the Zn/Al interface is an effective method for treating ZA27 alloy surface.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141668366","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-08DOI: 10.1149/2162-8777/ad6035
Ramesh Thotakura, P. Usha, K. Ashok, N. Pavan Kumar, Sadhana K, Praveena K
This study focuses on the synthesis and characterization of Mg and Al co-doped M-type Barium hexaferrite (BaMg0.4Al0.4Fe11.2O19) powder via the sol-gel method. Structural analysis using X-ray diffraction (XRD) and Fourier transformation infrared spectroscopy (FTIR) confirmed the single-phase structure of the synthesized powder. Morphological properties were examined through field emission scanning electron microscopy (FESEM), revealing hexagonal particle morphology with an average size of approximately 60 nm for BaMg0.4Al0.4Fe11.2O19. To fabricate composites, commercially purchased SiO2 was used to prepare the composites of (1–x) BaMg0.4Al0.4Fe11.2O19+ (x) SiO2 {where x = 0.0, 0.1, 0.3, 0.5 and 0.7). The composites were prepared using the mixing method followed by microwave sintered at 1000°C/90 min. FESEM and energy-dispersive X-ray spectroscopy (EDS) were employed to analyze the morphology and elemental composition of the composites. The composites ' frequency-dependent complex permittivity was measured over 300 kHz to 3 GHz. Magnetic hysteresis (M-H) loops were used to analyze the magnetic properties of composite samples. A reduction in magnetic saturation was observed with increasing SiO2 concentration, while there was a slight increase in coercivity for the composite samples compared to pure hexaferrite. Coercivity remained relatively unchanged with varying SiO2 concentrations in the composites.
本研究的重点是通过溶胶-凝胶法合成和表征镁和铝共掺杂的 M 型六价钡铁氧体（BaMg0.4Al0.4Fe11.2O19）粉末。利用 X 射线衍射 (XRD) 和傅立叶变换红外光谱 (FTIR) 进行的结构分析证实了合成粉末的单相结构。通过场发射扫描电子显微镜（FESEM）检查了形态学特性，发现 BaMg0.4Al0.4Fe11.2O19 的颗粒形态为六角形，平均粒径约为 60 纳米。为了制备复合材料，我们使用从市场上购买的二氧化硅来制备 (1-x) BaMg0.4Al0.4Fe11.2O19+ (x) SiO2 { 其中 x = 0.0、0.1、0.3、0.5 和 0.7) 的复合材料。复合材料采用混合法制备，然后在 1000°C/90 分钟的温度下进行微波烧结。采用 FESEM 和能量色散 X 射线光谱（EDS）分析了复合材料的形态和元素组成。在 300 kHz 至 3 GHz 的频率范围内测量了复合材料随频率变化的复介电常数。磁滞（M-H）环用于分析复合材料样品的磁性能。随着二氧化硅浓度的增加，磁饱和度降低，而与纯六价铁相比，复合样品的矫顽力略有增加。随着复合材料中二氧化硅浓度的变化，矫顽力保持相对不变。
{"title":"Tunable Magnetic and Dielectric properties of BaMg0.4Al0.4Fe11.2O19 and SiO2 Composites for High-Frequency Applications","authors":"Ramesh Thotakura, P. Usha, K. Ashok, N. Pavan Kumar, Sadhana K, Praveena K","doi":"10.1149/2162-8777/ad6035","DOIUrl":"https://doi.org/10.1149/2162-8777/ad6035","url":null,"abstract":"\u0000 This study focuses on the synthesis and characterization of Mg and Al co-doped M-type Barium hexaferrite (BaMg0.4Al0.4Fe11.2O19) powder via the sol-gel method. Structural analysis using X-ray diffraction (XRD) and Fourier transformation infrared spectroscopy (FTIR) confirmed the single-phase structure of the synthesized powder. Morphological properties were examined through field emission scanning electron microscopy (FESEM), revealing hexagonal particle morphology with an average size of approximately 60 nm for BaMg0.4Al0.4Fe11.2O19. To fabricate composites, commercially purchased SiO2 was used to prepare the composites of (1–x) BaMg0.4Al0.4Fe11.2O19+ (x) SiO2 {where x = 0.0, 0.1, 0.3, 0.5 and 0.7). The composites were prepared using the mixing method followed by microwave sintered at 1000°C/90 min. FESEM and energy-dispersive X-ray spectroscopy (EDS) were employed to analyze the morphology and elemental composition of the composites. The composites ' frequency-dependent complex permittivity was measured over 300 kHz to 3 GHz. Magnetic hysteresis (M-H) loops were used to analyze the magnetic properties of composite samples. A reduction in magnetic saturation was observed with increasing SiO2 concentration, while there was a slight increase in coercivity for the composite samples compared to pure hexaferrite. Coercivity remained relatively unchanged with varying SiO2 concentrations in the composites.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141666732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-08DOI: 10.1149/2162-8777/ad5bff
Tejas Chennappa and Sudha D. Kamath
This comprehensive review article discusses the brief history, development, and applications of phosphor-based optical thermometers, which have become increasingly important in various fields due to their ability to measure temperature remotely and with high precision. The article highlights the importance of choosing the suitable phosphor material for a given application, considering factors such as crystal structure and mode of thermometry. It then delves into the structural importance of phosphors, discussing their luminescent properties. The review focuses particularly on fluorescence-based temperature-dependent techniques, including the fluorescence intensity ratio method, which has garnered significant attention due to its straightforward implementation, affordability, and self-referential nature. The article discusses the mathematical formulations underlying this method, including the Boltzmann distribution and the effective lifetime calculation. The review also explores the concept of dual-mode thermometry, which involves the use of multiple luminescent centers to enhance sensitivity and thermal stability. This approach is particularly useful in applications where single-emitter thermometers are vulnerable to variations in excitation intensity or detector stability. The article highlights the advantages, limitations, and future developments of phosphor-based thermometers, including their ability to measure temperature remotely and with high precision. Highlights Suitability of double perovskite phosphors for optical thermometry applications. Double perovskite structure influence on the sensitivities of temperature sensors. Fluorescence intensity ratio method is effective for the interpretation of thermal sensor sensitivities. Phosphors can be used as optical temperature sensors at higher temperatures.
{"title":"Review—Structural and Optical Interpretations on Phosphor-Based Optical Thermometry","authors":"Tejas Chennappa and Sudha D. Kamath","doi":"10.1149/2162-8777/ad5bff","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5bff","url":null,"abstract":"This comprehensive review article discusses the brief history, development, and applications of phosphor-based optical thermometers, which have become increasingly important in various fields due to their ability to measure temperature remotely and with high precision. The article highlights the importance of choosing the suitable phosphor material for a given application, considering factors such as crystal structure and mode of thermometry. It then delves into the structural importance of phosphors, discussing their luminescent properties. The review focuses particularly on fluorescence-based temperature-dependent techniques, including the fluorescence intensity ratio method, which has garnered significant attention due to its straightforward implementation, affordability, and self-referential nature. The article discusses the mathematical formulations underlying this method, including the Boltzmann distribution and the effective lifetime calculation. The review also explores the concept of dual-mode thermometry, which involves the use of multiple luminescent centers to enhance sensitivity and thermal stability. This approach is particularly useful in applications where single-emitter thermometers are vulnerable to variations in excitation intensity or detector stability. The article highlights the advantages, limitations, and future developments of phosphor-based thermometers, including their ability to measure temperature remotely and with high precision. Highlights Suitability of double perovskite phosphors for optical thermometry applications. Double perovskite structure influence on the sensitivities of temperature sensors. Fluorescence intensity ratio method is effective for the interpretation of thermal sensor sensitivities. Phosphors can be used as optical temperature sensors at higher temperatures.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":2.2,"publicationDate":"2024-07-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141573237","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-06DOI: 10.1149/2162-8777/ad5fe4
Mahadevaiyer Krishnan, Donald Capaneri, Sarukkai K Rangarajan
Abstract In this study, the molecular interactions occurring during Chemical Mechanical planarization of Copper in Ferric nitrate – Alumina – Benzotriazole system is investigated. This system is characterized by sudden and dramatic transitions in removal rates when experimental parameters such as downforce and concentrations of the slurry components (Benzotriazole, abrasive, oxidizer) are varied. This behavior is interpreted in terms of the three surface kinetic processes viz. Cu dissolution, film formation and film removal by abrasion, that determine the overall removal rate. A phenomenological model incorporating Frumkin isotherm for the adsorption of Benzotriazole molecules and Langmuir isotherm for the adsorption of surfactants/ions is proposed. Mathematical equations relating the rates of film formation, film removal and metal dissolution to the over all removal rates are derived. The Model is validated by comparing the model predictions with experimental data. The non-linear equations describing the sudden transitions are shown to exhibit a cusp catastrophe when the interaction parameter exceeds a certain value.
{"title":"Molecular interactions in Copper chemical mechanical planarization: A Phenomenological study","authors":"Mahadevaiyer Krishnan, Donald Capaneri, Sarukkai K Rangarajan","doi":"10.1149/2162-8777/ad5fe4","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5fe4","url":null,"abstract":"\u0000 Abstract In this study, the molecular interactions occurring during Chemical Mechanical planarization of Copper in Ferric nitrate – Alumina – Benzotriazole system is investigated. This system is characterized by sudden and dramatic transitions in removal rates when experimental parameters such as downforce and concentrations of the slurry components (Benzotriazole, abrasive, oxidizer) are varied. This behavior is interpreted in terms of the three surface kinetic processes viz. Cu dissolution, film formation and film removal by abrasion, that determine the overall removal rate. A phenomenological model incorporating Frumkin isotherm for the adsorption of Benzotriazole molecules and Langmuir isotherm for the adsorption of surfactants/ions is proposed. Mathematical equations relating the rates of film formation, film removal and metal dissolution to the over all removal rates are derived. The Model is validated by comparing the model predictions with experimental data. The non-linear equations describing the sudden transitions are shown to exhibit a cusp catastrophe when the interaction parameter exceeds a certain value.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141672435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-05DOI: 10.1149/2162-8777/ad5fba
Samarendra Nath Saha, Purna Chandra Barman, Rajdip Roy, N. B. Singh, Rajkumar Mondal, Shuvankar Gupta, Rakesh Das, Shivam Shukla, S. K. Srivastava, S. Anirban
This study explores the structural, microstructural, optical, and magnetic characteristics of double perovskite oxide Sm2CuMnO6. The sample is prepared in the monoclinic phase with space group P21/n using the auto-combustion method. The crystal structure exhibits distortion and tilting. First-principles calculations are conducted using the density-functional theory framework, focusing on electronic structures and density of states. The average crystallite size, particle size and grain size of the sintered sample are 34.42 nm, 36.15 nm and 475 nm respectively. The sample exhibits a direct band gap energy of 1.96 eV. Analysis of the X-ray photoelectron spectra indicates the presence of Sm3+, Cu2+, and Mn3+/Mn4+ ions in the sample. The DC magnetization study reveals a Curie temperature (Tc) of 50 K for the sample. A non-metallic state resembling a spin glass is detected below 15 K, arising from the competition between antiferromagnetic and ferromagnetic interactions. The maximum value of isothermal magnetic entropy, the relative cooling power and heat capacity are 1.4 J.kg–1.K–1, 100.2 J.kg–1, and 1.35 J.kg–1.K–1 at a field change of 70 kOe respectively. The value of Temperature Averaged Entropy Change is 1.36 J.kg-1.K-1 and 1.29 J.kg-1.K-1 for a temperature span of 10 K and 40 K at a field change of 70 kOe.
本研究探讨了双过氧化物 Sm2CuMnO6 的结构、微观结构、光学和磁学特性。该样品采用自动燃烧法制备成空间群为 P21/n 的单斜相。晶体结构表现出畸变和倾斜。利用密度泛函理论框架进行了第一原理计算，重点是电子结构和状态密度。烧结样品的平均晶体尺寸、颗粒尺寸和晶粒尺寸分别为 34.42 nm、36.15 nm 和 475 nm。样品的直接带隙能为 1.96 eV。X 射线光电子能谱分析表明，样品中存在 Sm3+、Cu2+ 和 Mn3+/Mn4+ 离子。直流磁化研究表明，样品的居里温度（Tc）为 50 K。在 15 K 以下检测到一种类似自旋玻璃的非金属状态，这是由于反铁磁和铁磁相互作用之间的竞争引起的。在磁场变化为 70 kOe 时，等温磁熵、相对冷却功率和热容量的最大值分别为 1.4 J.kg-1.K-1、100.2 J.kg-1 和 1.35 J.kg-1.K-1。在磁场变化为 70 kOe 时，温度跨度为 10 K 和 40 K 的温度平均熵变值分别为 1.36 J.kg-1.K-1 和 1.29 J.kg-1.K-1。
{"title":"Structure, Electronic, Optical, Magnetic and Magnetocaloric Properties of Sm2CuMnO6 Double Perovskite Nanomaterial","authors":"Samarendra Nath Saha, Purna Chandra Barman, Rajdip Roy, N. B. Singh, Rajkumar Mondal, Shuvankar Gupta, Rakesh Das, Shivam Shukla, S. K. Srivastava, S. Anirban","doi":"10.1149/2162-8777/ad5fba","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5fba","url":null,"abstract":"\u0000 This study explores the structural, microstructural, optical, and magnetic characteristics of double perovskite oxide Sm2CuMnO6. The sample is prepared in the monoclinic phase with space group P21/n using the auto-combustion method. The crystal structure exhibits distortion and tilting. First-principles calculations are conducted using the density-functional theory framework, focusing on electronic structures and density of states. The average crystallite size, particle size and grain size of the sintered sample are 34.42 nm, 36.15 nm and 475 nm respectively. The sample exhibits a direct band gap energy of 1.96 eV. Analysis of the X-ray photoelectron spectra indicates the presence of Sm3+, Cu2+, and Mn3+/Mn4+ ions in the sample. The DC magnetization study reveals a Curie temperature (Tc) of 50 K for the sample. A non-metallic state resembling a spin glass is detected below 15 K, arising from the competition between antiferromagnetic and ferromagnetic interactions. The maximum value of isothermal magnetic entropy, the relative cooling power and heat capacity are 1.4 J.kg–1.K–1, 100.2 J.kg–1, and 1.35 J.kg–1.K–1 at a field change of 70 kOe respectively. The value of Temperature Averaged Entropy Change is 1.36 J.kg-1.K-1 and 1.29 J.kg-1.K-1 for a temperature span of 10 K and 40 K at a field change of 70 kOe.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141676207","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Hybrid bonding has become a promising approach to realizing fine pitch interconnection via bonding for both the wafer level and die level. The morphology and cleanliness of the bonding surface are critical to ensure a high yield. Therefore, surface planarization by chemical mechanical polishing (CMP) is considered a key process. The recess on the Cu pad must be controlled to be less than 5 nm by adjusting the removal rate between the Cu, the barrier layer, and the bonding dielectric layer. Conventionally, SiO2 has served as the bonding dielectric. However, SiCN is considered a promising dielectric because of its high bonding strength, suppression of voids, and ability to function as a Cu diffusion barrier. Here, we investigated simultaneous Cu, barrier, and SiCN CMP for hybrid bonding. Post-CMP processes such as cleaning and activation were also assessed. The results revealed that the removal rate of the three materials could be adjusted by dilution of the slurry and oxidizer. Lower selectivity was achieved at a certain dilution rate in an alkaline barrier slurry. Plasma activation revealed that the Cu passivation layer formed during cleaning was removed. Therefore, residues from CMP and post-CMP processes did not affect Cu prior to the hybrid bonding.
{"title":"Minimizing Recess of Cu Pad on Hybrid Bonding with SiCN via Non-selective Chemical Mechanical Polishing and Post-cleaning Steps","authors":"Kohei Nakayama, Kenta Hayama, Fabiana Lie Tanaka, Mai Thi Ngoc La, Fumihiro Inoue","doi":"10.1149/2162-8777/ad5fb7","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5fb7","url":null,"abstract":"\u0000 Hybrid bonding has become a promising approach to realizing fine pitch interconnection via bonding for both the wafer level and die level. The morphology and cleanliness of the bonding surface are critical to ensure a high yield. Therefore, surface planarization by chemical mechanical polishing (CMP) is considered a key process. The recess on the Cu pad must be controlled to be less than 5 nm by adjusting the removal rate between the Cu, the barrier layer, and the bonding dielectric layer. Conventionally, SiO2 has served as the bonding dielectric. However, SiCN is considered a promising dielectric because of its high bonding strength, suppression of voids, and ability to function as a Cu diffusion barrier. Here, we investigated simultaneous Cu, barrier, and SiCN CMP for hybrid bonding. Post-CMP processes such as cleaning and activation were also assessed. The results revealed that the removal rate of the three materials could be adjusted by dilution of the slurry and oxidizer. Lower selectivity was achieved at a certain dilution rate in an alkaline barrier slurry. Plasma activation revealed that the Cu passivation layer formed during cleaning was removed. Therefore, residues from CMP and post-CMP processes did not affect Cu prior to the hybrid bonding.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141674101","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-07-05DOI: 10.1149/2162-8777/ad5fb6
Hitoshi Morinaga
This paper reviews how today's CMP (Chemical Mechanical Polishing) slurries have been innovated and explores ideas for driving further evolution. In early semiconductor polishing, Mechanical Polishing was used, focusing on controlling abrasive particle sizes, leading to the use of alumina abrasives via wet classification. As materials shifted from germanium to silicon and applications transitioned from radios to integrated circuits, research was conducted on the material and size of abrasives to improve polishing accuracy, and silica was finally adopted. Subsequently, in pursuit of higher purity, ultrapure colloidal silica using organic raw materials was introduced in 1985 and became the standard in current semiconductor CMP. The first report on CMP dates back to Schmidt's 1962 paper. Although the report was based on visual inspection, the approach was validated to be reasonable with today's inspection technology. CMP achieved further defect reduction by integrating with Clean Technology. Throughout its history, polishing consistently pursued uniform action on surfaces, driving contaminant reduction, and occasionally achieving significant breakthroughs through the combination of diverse technologies. Innovations are born when disparate technologies, evolving independently until a certain point, interact and combine according to market needs.
{"title":"Origin and Innovations of CMP Slurry","authors":"Hitoshi Morinaga","doi":"10.1149/2162-8777/ad5fb6","DOIUrl":"https://doi.org/10.1149/2162-8777/ad5fb6","url":null,"abstract":"\u0000 This paper reviews how today's CMP (Chemical Mechanical Polishing) slurries have been innovated and explores ideas for driving further evolution. In early semiconductor polishing, Mechanical Polishing was used, focusing on controlling abrasive particle sizes, leading to the use of alumina abrasives via wet classification. As materials shifted from germanium to silicon and applications transitioned from radios to integrated circuits, research was conducted on the material and size of abrasives to improve polishing accuracy, and silica was finally adopted. Subsequently, in pursuit of higher purity, ultrapure colloidal silica using organic raw materials was introduced in 1985 and became the standard in current semiconductor CMP. The first report on CMP dates back to Schmidt's 1962 paper. Although the report was based on visual inspection, the approach was validated to be reasonable with today's inspection technology. CMP achieved further defect reduction by integrating with Clean Technology. Throughout its history, polishing consistently pursued uniform action on surfaces, driving contaminant reduction, and occasionally achieving significant breakthroughs through the combination of diverse technologies. Innovations are born when disparate technologies, evolving independently until a certain point, interact and combine according to market needs.","PeriodicalId":11496,"journal":{"name":"ECS Journal of Solid State Science and Technology","volume":null,"pages":null},"PeriodicalIF":1.8,"publicationDate":"2024-07-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141673758","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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