Pub Date : 2007-07-02DOI: 10.1109/RME.2007.4401820
G. Busonera, P. Meloni, S. Carta, L. Raffo
Classic shared bus structures, traditionally used in MPSoC architectures, show functional and physical scalability issues, when the number of cores integrated on a single die increases. Network on Chip architectures are proposed as a solution to overcome this problems. The Aim of this paper is to discuss the relationship of the performances with respect to the mentioned interconnect parameters, in case of traffic generated by cache operations (block replacements). We paid special attention to investigate the impact of the serialization factor, that was already not clearly assessed in literature for this important case of study. A numerical analysis, referring to an actual implementation of the NoC on a state-of-the-art 65 nm technological process has been performed. The results were used to analyze how the energy and execution time metrics change over the whole design space. This allow the best choice of packet size and serialization factor value in order to optimize one or both metric.
{"title":"Optimizing the serialization factor in Networks-on-Chip: a case of study","authors":"G. Busonera, P. Meloni, S. Carta, L. Raffo","doi":"10.1109/RME.2007.4401820","DOIUrl":"https://doi.org/10.1109/RME.2007.4401820","url":null,"abstract":"Classic shared bus structures, traditionally used in MPSoC architectures, show functional and physical scalability issues, when the number of cores integrated on a single die increases. Network on Chip architectures are proposed as a solution to overcome this problems. The Aim of this paper is to discuss the relationship of the performances with respect to the mentioned interconnect parameters, in case of traffic generated by cache operations (block replacements). We paid special attention to investigate the impact of the serialization factor, that was already not clearly assessed in literature for this important case of study. A numerical analysis, referring to an actual implementation of the NoC on a state-of-the-art 65 nm technological process has been performed. The results were used to analyze how the energy and execution time metrics change over the whole design space. This allow the best choice of packet size and serialization factor value in order to optimize one or both metric.","PeriodicalId":118230,"journal":{"name":"2007 Ph.D Research in Microelectronics and Electronics Conference","volume":" 30","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132188021","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-02DOI: 10.1109/RME.2007.4401851
M. Mathew, K. Hayatleh, B. Hart, F. J. Lidgey
The use of two complementary emitter-followers, in which the collector currents are held effectively constant by feedback action, facilitates the design of a differential voltage- current converter capable of producing lower output signal distortion. The proposed circuit provides an extended linear operating range, and total harmonic distortion (THD) 20 dB better than that compared with an emitter-degenerated long- tailed pair circuit. Simulation results show that the THD is better than -70 dB for differential input signals up to 0.5 V at a test frequency of 1 MHz and supply voltage of plusmn5 V.
{"title":"Linear differential voltage-current converter","authors":"M. Mathew, K. Hayatleh, B. Hart, F. J. Lidgey","doi":"10.1109/RME.2007.4401851","DOIUrl":"https://doi.org/10.1109/RME.2007.4401851","url":null,"abstract":"The use of two complementary emitter-followers, in which the collector currents are held effectively constant by feedback action, facilitates the design of a differential voltage- current converter capable of producing lower output signal distortion. The proposed circuit provides an extended linear operating range, and total harmonic distortion (THD) 20 dB better than that compared with an emitter-degenerated long- tailed pair circuit. Simulation results show that the THD is better than -70 dB for differential input signals up to 0.5 V at a test frequency of 1 MHz and supply voltage of plusmn5 V.","PeriodicalId":118230,"journal":{"name":"2007 Ph.D Research in Microelectronics and Electronics Conference","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122380909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-02DOI: 10.1109/RME.2007.4401808
Wen-Chieh Wang, Chung-Yu Wu
A new high frequency CMOS current-mode up-conversion mixer is proposed to realize the transmitter front-end in the frequency band of 24 GHz. The transmitter integrates with a double-balance current-mode up-conversion mixer, an IF amplifier/repeater, a differential VCO and a differential VCO buffer/repeater. The performance of the transmitter exhibits a conversion gain of 1.3 dB, the input 1-dB compression point (P-1db) is -22 dBm, the input intercept 3rd-order compression point (PIIP3) is -8.75 dBm, and the output intercept 3rd-order compression point (POIP3) is -7.44 dBm. The phase noise of the differential VCO is -117 dBc/Hz at 10-MHz offset from 26 GHz. The proposed mixer consumes only 3.89 mW from a 1-V supply. The total power dissipation of the transmitter is 15.4 mW from 1-V supply. This chip is designed in 0.13-mum 1P8M CMOS technology and under fabrication.
{"title":"The 1-V 24-GHz low-voltage low-power current- mode transmitter in 130-nm CMOS technology","authors":"Wen-Chieh Wang, Chung-Yu Wu","doi":"10.1109/RME.2007.4401808","DOIUrl":"https://doi.org/10.1109/RME.2007.4401808","url":null,"abstract":"A new high frequency CMOS current-mode up-conversion mixer is proposed to realize the transmitter front-end in the frequency band of 24 GHz. The transmitter integrates with a double-balance current-mode up-conversion mixer, an IF amplifier/repeater, a differential VCO and a differential VCO buffer/repeater. The performance of the transmitter exhibits a conversion gain of 1.3 dB, the input 1-dB compression point (P-1db) is -22 dBm, the input intercept 3rd-order compression point (PIIP3) is -8.75 dBm, and the output intercept 3rd-order compression point (POIP3) is -7.44 dBm. The phase noise of the differential VCO is -117 dBc/Hz at 10-MHz offset from 26 GHz. The proposed mixer consumes only 3.89 mW from a 1-V supply. The total power dissipation of the transmitter is 15.4 mW from 1-V supply. This chip is designed in 0.13-mum 1P8M CMOS technology and under fabrication.","PeriodicalId":118230,"journal":{"name":"2007 Ph.D Research in Microelectronics and Electronics Conference","volume":"112 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124099209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-02DOI: 10.1109/RME.2007.4401800
R. Wu, J. Long, M. van de Gevel, G. Glassche
This paper presents a single-bit fifth-order continuous-time sigma-delta modulator for UMTS application. To relax the linearity requirement of the first integrator, a low-pass filter is inserted in the negative feedback loop after the summing node. To reduce power consumption, the loop- filter is implemented using a feed-forward topology. Measurement results show that it achieves 62 dB SNDR with an over-sampling ratio of 32 over a 2 MHz bandwidth. The power consumption is 8 mW at a supply voltage of 2.5 V in a 1-poly 5- metal 0.24 mum CMOS technology.
{"title":"A fifth-order continuous-time sigma-delta modulator with 62-dB dynamic range and 2MHz bandwidth","authors":"R. Wu, J. Long, M. van de Gevel, G. Glassche","doi":"10.1109/RME.2007.4401800","DOIUrl":"https://doi.org/10.1109/RME.2007.4401800","url":null,"abstract":"This paper presents a single-bit fifth-order continuous-time sigma-delta modulator for UMTS application. To relax the linearity requirement of the first integrator, a low-pass filter is inserted in the negative feedback loop after the summing node. To reduce power consumption, the loop- filter is implemented using a feed-forward topology. Measurement results show that it achieves 62 dB SNDR with an over-sampling ratio of 32 over a 2 MHz bandwidth. The power consumption is 8 mW at a supply voltage of 2.5 V in a 1-poly 5- metal 0.24 mum CMOS technology.","PeriodicalId":118230,"journal":{"name":"2007 Ph.D Research in Microelectronics and Electronics Conference","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122758987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-02DOI: 10.1109/RME.2007.4401810
K. Minoglou, E. Kyriakis-Bitzaros, G. Katsafouros, A. Arapoyianni, D. Syvridis
The study of high density integrated optoelectronic circuits involves (a) the development of hybrid integration technologies and (b) the generation of models for the optoelectronic devices. To meet the first goal, a methodology for the heterogeneous integration of epitaxial GaAs wafers with fully processed standard bipolar complementary metal-oxide-semiconductor (CMOS) Si wafers, based on spin-on glass (SOG) /SiO2 bonding, is presented. Further investigation on heterogeneous integration is achieved by presenting a second methodology for the integration of a photonic layer above CMOS integrated circuits: a novel metallic bonding technique that utilizes the Au-20Sn eutectic alloy along with the rare earth element (Gd) is developed for the bonding of complete optoelectronic (OE) dies, consisting of optical sources, detectors and waveguides, to CMOS circuits. To meet the second goal, an efficient model scheme that combines the nonlinear behavior of the input parasitics with the intrinsic fundamental device rate equations of the vertical cavity surface emitting lasers (VCSELs) is proposed. A systematic methodology for the model parameter extraction is presented. Simulation results are compared with the experimental measurements while extraction and simulation procedures are implemented in commercial integrated circuit design tools. Finally, using the proposed model, the traditional laser diode driving (LDD) circuits have been evaluated for their suitability to drive VCSELs.
{"title":"High density integrated optoelectronic circuits for high speed photonic microsystems","authors":"K. Minoglou, E. Kyriakis-Bitzaros, G. Katsafouros, A. Arapoyianni, D. Syvridis","doi":"10.1109/RME.2007.4401810","DOIUrl":"https://doi.org/10.1109/RME.2007.4401810","url":null,"abstract":"The study of high density integrated optoelectronic circuits involves (a) the development of hybrid integration technologies and (b) the generation of models for the optoelectronic devices. To meet the first goal, a methodology for the heterogeneous integration of epitaxial GaAs wafers with fully processed standard bipolar complementary metal-oxide-semiconductor (CMOS) Si wafers, based on spin-on glass (SOG) /SiO2 bonding, is presented. Further investigation on heterogeneous integration is achieved by presenting a second methodology for the integration of a photonic layer above CMOS integrated circuits: a novel metallic bonding technique that utilizes the Au-20Sn eutectic alloy along with the rare earth element (Gd) is developed for the bonding of complete optoelectronic (OE) dies, consisting of optical sources, detectors and waveguides, to CMOS circuits. To meet the second goal, an efficient model scheme that combines the nonlinear behavior of the input parasitics with the intrinsic fundamental device rate equations of the vertical cavity surface emitting lasers (VCSELs) is proposed. A systematic methodology for the model parameter extraction is presented. Simulation results are compared with the experimental measurements while extraction and simulation procedures are implemented in commercial integrated circuit design tools. Finally, using the proposed model, the traditional laser diode driving (LDD) circuits have been evaluated for their suitability to drive VCSELs.","PeriodicalId":118230,"journal":{"name":"2007 Ph.D Research in Microelectronics and Electronics Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131565221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-02DOI: 10.1109/RME.2007.4401859
N. Joye, A. Schmid, Y. Leblebici, T. Asai, Y. Amemiya
Fault-tolerant design methods for VLSI circuits, which have traditionally been addressed at system level, will not be adequate for future very-deep submicron CMOS devices where serious degradation of reliability is expected. Therefore, a new design approach has been considered at low level of abstraction in order to implement robustness and fault-tolerance into these devices. Moreover, fault tolerant properties of multi-layer feed-forward artificial neural networks have been demonstrated. Thus, we have implemented this concept at circuit-level, using spiking neurons. Using this approach, the NOT, NAND and NOR Boolean gates have been developed in the AMS 0.35 mum CMOS technology. A very straightforward mapping between the value of a neural weight and one physical parameter of the circuit has also been achieved. Furthermore, the logic gates have been simulated using SPICE corners analysis which emulates manufacturing variations which may cause circuit faults. Using this approach, it can be shown that fault-absorbing neural networks that operate as the desired function can be built.
{"title":"Fault-tolerant logic gates using neuromorphic CMOS Circuits","authors":"N. Joye, A. Schmid, Y. Leblebici, T. Asai, Y. Amemiya","doi":"10.1109/RME.2007.4401859","DOIUrl":"https://doi.org/10.1109/RME.2007.4401859","url":null,"abstract":"Fault-tolerant design methods for VLSI circuits, which have traditionally been addressed at system level, will not be adequate for future very-deep submicron CMOS devices where serious degradation of reliability is expected. Therefore, a new design approach has been considered at low level of abstraction in order to implement robustness and fault-tolerance into these devices. Moreover, fault tolerant properties of multi-layer feed-forward artificial neural networks have been demonstrated. Thus, we have implemented this concept at circuit-level, using spiking neurons. Using this approach, the NOT, NAND and NOR Boolean gates have been developed in the AMS 0.35 mum CMOS technology. A very straightforward mapping between the value of a neural weight and one physical parameter of the circuit has also been achieved. Furthermore, the logic gates have been simulated using SPICE corners analysis which emulates manufacturing variations which may cause circuit faults. Using this approach, it can be shown that fault-absorbing neural networks that operate as the desired function can be built.","PeriodicalId":118230,"journal":{"name":"2007 Ph.D Research in Microelectronics and Electronics Conference","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120959374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-02DOI: 10.1109/RME.2007.4401815
M. Sánchez-Renedo, S. Patón
A cascaded continuous-time SigmaDelta modulator with programmable NTF zero and simple mismatch correction method is proposed. By using interstage feedback the loop filter resonator is not needed to introduce an NTF zero. As a result of the absence of resonators very simple mismatch tuning methods can be applied because the interstage feedback does not have influence in the mismatch properties. Moreover the loop filter stability is improved when the resonator is removed. Analytical expressions to calculate the interstage feedback gain are proposed to place the NTF zero in the desired location in the continuous-time case. To validate the proposed method several Monte Carlo analyses have been carried out showing an improvement in the mean SNR value of 10dB.
{"title":"A cascaded CT ΣΔ modulator with NTF zero and simple mismatch tuning method using interstage feedback","authors":"M. Sánchez-Renedo, S. Patón","doi":"10.1109/RME.2007.4401815","DOIUrl":"https://doi.org/10.1109/RME.2007.4401815","url":null,"abstract":"A cascaded continuous-time SigmaDelta modulator with programmable NTF zero and simple mismatch correction method is proposed. By using interstage feedback the loop filter resonator is not needed to introduce an NTF zero. As a result of the absence of resonators very simple mismatch tuning methods can be applied because the interstage feedback does not have influence in the mismatch properties. Moreover the loop filter stability is improved when the resonator is removed. Analytical expressions to calculate the interstage feedback gain are proposed to place the NTF zero in the desired location in the continuous-time case. To validate the proposed method several Monte Carlo analyses have been carried out showing an improvement in the mean SNR value of 10dB.","PeriodicalId":118230,"journal":{"name":"2007 Ph.D Research in Microelectronics and Electronics Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129374211","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-02DOI: 10.1109/RME.2007.4401839
F. Fons, M. Fons, E. Cantó, M. López
Reconfigurable computing adds to the traditional hardware/software design flow a new degree of freedom in the development of electronic systems. In a system-on-chip platform, the fact that a MCU makes evolve at run-time a hardware coprocessor mapped on a FPGA, to execute thus different compute-intensive tasks in the same silicon-area, results in a clear earned value applied to the system implementation: the low-cost reached through the resources time-multiplexing. Under that approach, this work merges both reconfigurable computing and HW/SW co-design technologies to develop an efficient architecture of an automatic fingerprint authentication system (AFAS) oriented to real-time embedded applications.
{"title":"Flexible hardware for fingerprint Image Processing","authors":"F. Fons, M. Fons, E. Cantó, M. López","doi":"10.1109/RME.2007.4401839","DOIUrl":"https://doi.org/10.1109/RME.2007.4401839","url":null,"abstract":"Reconfigurable computing adds to the traditional hardware/software design flow a new degree of freedom in the development of electronic systems. In a system-on-chip platform, the fact that a MCU makes evolve at run-time a hardware coprocessor mapped on a FPGA, to execute thus different compute-intensive tasks in the same silicon-area, results in a clear earned value applied to the system implementation: the low-cost reached through the resources time-multiplexing. Under that approach, this work merges both reconfigurable computing and HW/SW co-design technologies to develop an efficient architecture of an automatic fingerprint authentication system (AFAS) oriented to real-time embedded applications.","PeriodicalId":118230,"journal":{"name":"2007 Ph.D Research in Microelectronics and Electronics Conference","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115627260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-02DOI: 10.1109/RME.2007.4401869
F. Maloberti
The decrease of the supply voltage reduces the voltage headroom in analog circuits, the gate leakage current increases, the voltage gain decreases in planar bulk MOS transistors, 1/f noise deteriorate when using new high-k gate dielectrics. The consequences of the above limits are twofold: to remain a little behind the technology front and to push the analog digital interface toward the digital domain. However, a global digital world is impossible because signals of the real world are analog. Therefore, the trend is to focus on the interfaces: A/D and D/A, and minimize the analog preprocessing. Nevertheless, for achieving a suitable resolution it is necessary to design op-amps or OTA with an acceptable gain, and to obtain comparators with good sensitivity and low offset, thus facing in addition to the above the problem of correcting or compensating for the transistor and passive components mismatches.
{"title":"Technology scaling and low-power data converter design","authors":"F. Maloberti","doi":"10.1109/RME.2007.4401869","DOIUrl":"https://doi.org/10.1109/RME.2007.4401869","url":null,"abstract":"The decrease of the supply voltage reduces the voltage headroom in analog circuits, the gate leakage current increases, the voltage gain decreases in planar bulk MOS transistors, 1/f noise deteriorate when using new high-k gate dielectrics. The consequences of the above limits are twofold: to remain a little behind the technology front and to push the analog digital interface toward the digital domain. However, a global digital world is impossible because signals of the real world are analog. Therefore, the trend is to focus on the interfaces: A/D and D/A, and minimize the analog preprocessing. Nevertheless, for achieving a suitable resolution it is necessary to design op-amps or OTA with an acceptable gain, and to obtain comparators with good sensitivity and low offset, thus facing in addition to the above the problem of correcting or compensating for the transistor and passive components mismatches.","PeriodicalId":118230,"journal":{"name":"2007 Ph.D Research in Microelectronics and Electronics Conference","volume":"188 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123271709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2007-07-02DOI: 10.1109/RME.2007.4401846
C. Kharrat, É. Colinet, A. Voda
A closed-loop control approach for the dynamic shaping of a microbeam by electrostatic actuation is described. Starting from a desired displacements reference vector of N small segments of the beam (representing the approximation of the continuous case), n controllers (n is the number of considered modes) output the stresses that must be distributed throughout the beam, on the N actuators. Because this reference may vary with time, the controllers are designed so that they accomplish good response dynamics, as well as performance and robustness specifications. The innovation in this method is that we control the dynamic coefficients associated to the modes of the microbeam and not directly the physical displacements in each small segment, which reduces the number of correctors from N to the number of n modes to control.
{"title":"Microbeam dynamic shaping by closed-loop electrostatic actuation using modal control","authors":"C. Kharrat, É. Colinet, A. Voda","doi":"10.1109/RME.2007.4401846","DOIUrl":"https://doi.org/10.1109/RME.2007.4401846","url":null,"abstract":"A closed-loop control approach for the dynamic shaping of a microbeam by electrostatic actuation is described. Starting from a desired displacements reference vector of N small segments of the beam (representing the approximation of the continuous case), n controllers (n is the number of considered modes) output the stresses that must be distributed throughout the beam, on the N actuators. Because this reference may vary with time, the controllers are designed so that they accomplish good response dynamics, as well as performance and robustness specifications. The innovation in this method is that we control the dynamic coefficients associated to the modes of the microbeam and not directly the physical displacements in each small segment, which reduces the number of correctors from N to the number of n modes to control.","PeriodicalId":118230,"journal":{"name":"2007 Ph.D Research in Microelectronics and Electronics Conference","volume":"372 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2007-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126710901","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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