Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562644
M. Egard, M. Arlelid, L. Ohlsson, B. Borg, E. Lind, L. Wernersson
Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/μm) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.
{"title":"Frequency modulation in mm-wave InGaAs MOSFET/RTD wavelet generators","authors":"M. Egard, M. Arlelid, L. Ohlsson, B. Borg, E. Lind, L. Wernersson","doi":"10.1109/ICIPRM.2013.6562644","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562644","url":null,"abstract":"Co-integration of an InGaAs MOSFET and an RTD is performed to realize a wavelet generator. The large transconductance of the MOSFET (1.9 mS/μm) is used to switch the current in an oscillator circuit and coherent wavelets down to 41 ps are generated in the frequency domain of 50 to 100 GHz. The lowest power consumption measured is 1.9 pJ/pulse. It is found that the supply bias can be used to modulate the center frequency of the wavelets.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124076976","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562577
Keiichi Matsumoto, Xinxin Zhang, Yoshonori Kanaya, K. Shimomura
InP/Si substrate has been fabricated by employing wet-etching and wafer direct bonding technique. The surface of the InP/Si substrate was very smooth and no strain was observed. On top of the substrate, InAs/InP quantum dots (QDs) have been monolithically grown using metal organic vapor phase epitaxy (MOVPE). According to photo-luminescence (PL) measurement, almost the same intensity, peak wavelength and full width half of maximum (FWHM) have been observed compared to QDs on InP substrate.
{"title":"MOVPE growth of InAs/InP QDs on directly-bonded InP/Si substrate","authors":"Keiichi Matsumoto, Xinxin Zhang, Yoshonori Kanaya, K. Shimomura","doi":"10.1109/ICIPRM.2013.6562577","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562577","url":null,"abstract":"InP/Si substrate has been fabricated by employing wet-etching and wafer direct bonding technique. The surface of the InP/Si substrate was very smooth and no strain was observed. On top of the substrate, InAs/InP quantum dots (QDs) have been monolithically grown using metal organic vapor phase epitaxy (MOVPE). According to photo-luminescence (PL) measurement, almost the same intensity, peak wavelength and full width half of maximum (FWHM) have been observed compared to QDs on InP substrate.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131558768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562563
A. Rastelli, R. Trotta, E. Zallo, P. Atkinson, O. Schmidt
We introduce a new class of quantum dot-based devices, in which the semiconductor structures are integrated on top of piezoelectric actuators. This combination allows us on one hand to study in detail the effects produced by variable strains (up to about 0.2%) on the excitonic emission of single quantum dots and on the other to manipulate their electronic- and optical properties to achieve specific requirements for their use in quantum optics experiments and possibly future devices for quantum communication.
{"title":"Reshaping the optical properties of quantum dots via strain and electric fields","authors":"A. Rastelli, R. Trotta, E. Zallo, P. Atkinson, O. Schmidt","doi":"10.1109/ICIPRM.2013.6562563","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562563","url":null,"abstract":"We introduce a new class of quantum dot-based devices, in which the semiconductor structures are integrated on top of piezoelectric actuators. This combination allows us on one hand to study in detail the effects produced by variable strains (up to about 0.2%) on the excitonic emission of single quantum dots and on the other to manipulate their electronic- and optical properties to achieve specific requirements for their use in quantum optics experiments and possibly future devices for quantum communication.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134042324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562582
Qi-jian Huang, Zhiguo Liu, R. Yang, Xiaolan Li, Qiang Wang, Xiuwei Tian, Jianye Yang, Shuai Li
We studied the effect of HCl, H3PO4, HBr etchants, temperature, illumination on the display of dislocation pits on <;100> InP single crystal wafers, and analyzed the effect of illumination, using the wet chemical etching method. The experimental results show that the etching rate is strongly dependent on the proportion of HBr in the mixed etchant and HBr alone can reveal dislocation pits on <;100> InP wafers. Both illumination and higher temperature can increase the etching rate. We also discuss the mechanism of different sizes of dislocation pits.
{"title":"The measurement of dislocation on InP wafers","authors":"Qi-jian Huang, Zhiguo Liu, R. Yang, Xiaolan Li, Qiang Wang, Xiuwei Tian, Jianye Yang, Shuai Li","doi":"10.1109/ICIPRM.2013.6562582","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562582","url":null,"abstract":"We studied the effect of HCl, H3PO4, HBr etchants, temperature, illumination on the display of dislocation pits on <;100> InP single crystal wafers, and analyzed the effect of illumination, using the wet chemical etching method. The experimental results show that the etching rate is strongly dependent on the proportion of HBr in the mixed etchant and HBr alone can reveal dislocation pits on <;100> InP wafers. Both illumination and higher temperature can increase the etching rate. We also discuss the mechanism of different sizes of dislocation pits.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133948773","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562634
Karl‐Magnus Persson, M. Berg, E. Lind, L. Wernersson
The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-κ interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, SVg, is improved by one order of magnitude per unit gate area.
{"title":"1/f-noise in vertical InAs nanowire transistors","authors":"Karl‐Magnus Persson, M. Berg, E. Lind, L. Wernersson","doi":"10.1109/ICIPRM.2013.6562634","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562634","url":null,"abstract":"The material quality at high-k interfaces are a major concern for FET devices. We study the effect on two types of InAs nanowire (NW) transistors and compare their characteristics. It is found that by introducing an inner layer of Al2O3 at the high-κ interface, the low frequency noise (LFN) performance regarding gate voltage noise spectral density, SVg, is improved by one order of magnitude per unit gate area.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132225459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562595
K. Klaime, C. Calò, R. Piron, C. Paranthoen, D. Thiam, T. Batte, O. Dehaese, J. Le Pouliquen, S. Loualiche, A. Le Corre, K. Merghem, A. Martinez, A. Ramdane
We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.
{"title":"InAs/InP quantum dot mode-locked lasers grown on (113)B InP substrate","authors":"K. Klaime, C. Calò, R. Piron, C. Paranthoen, D. Thiam, T. Batte, O. Dehaese, J. Le Pouliquen, S. Loualiche, A. Le Corre, K. Merghem, A. Martinez, A. Ramdane","doi":"10.1109/ICIPRM.2013.6562595","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562595","url":null,"abstract":"We report for the first time the passive mode-locking of single section Fabry-Perot (FP) lasers based on InAs quantum dots grown on (113)B InP substrate. Devices under study are a 1 and 2 mm long laser diodes emitting around 1.58 μm. Self-starting pulses with repetition rates around 39 and 23 GHz and pulse widths down to 1.5 ps are observed after propagation through a suitable length of single-mode fiber for intracavity dispersion compensation.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123288551","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562616
C. Calò, H. Schmeckebier, K. Merghem, R. Rosales, F. Lelarge, A. Martinez, D. Bimberg, A. Ramdane
Mode-locking of single-section Fabry-Pérot lasers based on InAs/InP quantum dashes is studied by second-harmonic generation frequency-resolved optical gating (SHG-FROG). The devices take advantage of an optimized epitaxial structure with modal gain of 50 cm-1 showing a broad and flat emission spectrum of width in excess of 14 nm. Self-starting pulses of a width down to 430 fs are observed after intracavity dispersion compensation using single-mode fiber (SMF).
{"title":"Frequency-resolved optical gating measurements of sub-ps pulses from InAs/InP quantum dash based mode-locked lasers","authors":"C. Calò, H. Schmeckebier, K. Merghem, R. Rosales, F. Lelarge, A. Martinez, D. Bimberg, A. Ramdane","doi":"10.1109/ICIPRM.2013.6562616","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562616","url":null,"abstract":"Mode-locking of single-section Fabry-Pérot lasers based on InAs/InP quantum dashes is studied by second-harmonic generation frequency-resolved optical gating (SHG-FROG). The devices take advantage of an optimized epitaxial structure with modal gain of 50 cm-1 showing a broad and flat emission spectrum of width in excess of 14 nm. Self-starting pulses of a width down to 430 fs are observed after intracavity dispersion compensation using single-mode fiber (SMF).","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125760284","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562642
Y. Kurita, Kengo Kobayashi, T. Otsuji, G. Ducournau, Y. Meziani, V. Popov, W. Knap
We report on an extremely-high sensitive terahertz (THz) detector based on our original asymmetric dual-grating gate high electron mobility transistors (A-DGG HEMTs) designed and fabricated using InAlAs/InGaAs/InP material systems. The obtained responsivity is 22.7 kV/W at 200 GHz. To the best of our knowledge, this value is the record responsivity ever reported for this frequency range at room temperature.
{"title":"Extremely-high sensitive terahertz detector based on dual-grating gate InP-HEMTs","authors":"Y. Kurita, Kengo Kobayashi, T. Otsuji, G. Ducournau, Y. Meziani, V. Popov, W. Knap","doi":"10.1109/ICIPRM.2013.6562642","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562642","url":null,"abstract":"We report on an extremely-high sensitive terahertz (THz) detector based on our original asymmetric dual-grating gate high electron mobility transistors (A-DGG HEMTs) designed and fabricated using InAlAs/InGaAs/InP material systems. The obtained responsivity is 22.7 kV/W at 200 GHz. To the best of our knowledge, this value is the record responsivity ever reported for this frequency range at room temperature.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116741545","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562593
N. Hatori, Takanori Shimizu, M. Okano, M. Ishizaka, Tsuyoshi Yamamoto, Y. Urino, M. Mori, Takahiro Nakamura, Y. Arakawa
In this work, we present a multi-channel configuration for the low power consumption operation of light sources on a silicon substrate in a photonics-electronics convergence system. We simulated the power consumed by the entire system with a focus on the characteristics of a laser diode used as a light source and the total loss of the system. Simulation results showed that lower power consumption per channel can be achieved with a single-LD multi-channel branching configuration. We found that using a hybrid integrated light source on a Si substrate with this branching configuration is suitable for photonics-electronics convergence systems.
{"title":"Low power consumption operation of light sources for inter-chip optical interconnects","authors":"N. Hatori, Takanori Shimizu, M. Okano, M. Ishizaka, Tsuyoshi Yamamoto, Y. Urino, M. Mori, Takahiro Nakamura, Y. Arakawa","doi":"10.1109/ICIPRM.2013.6562593","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562593","url":null,"abstract":"In this work, we present a multi-channel configuration for the low power consumption operation of light sources on a silicon substrate in a photonics-electronics convergence system. We simulated the power consumed by the entire system with a focus on the characteristics of a laser diode used as a light source and the total loss of the system. Simulation results showed that lower power consumption per channel can be achieved with a single-LD multi-channel branching configuration. We found that using a hybrid integrated light source on a Si substrate with this branching configuration is suitable for photonics-electronics convergence systems.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130858846","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562581
H. Yamaguchi, T. Nagira, Z. Kawazu, K. Ono, M. Takemi
Ruthenium (Ru) as the semi-insulated doping material for InP has good characteristics in terms of the capacitance and heat dissipation of the current blocking layer for Laser Diodes. However unintentional Zn diffusion from adjacent p-InP into Ru-InP causes the degradation of Laser characteristics such as the output power. In this paper, we fabricated p-InP/Ru-InP/pInP (p/Ru/p-InP) structure by Metalorganic Vapor Phase Epitaxy (MOVPE) and analyzed the behavior of Zn diffusion from Zn-InP into Ru-InP after annealing by SIMS measurement.
{"title":"Zn diffusion in Ruthenium doped InP with annealing by Metalorganic Vapor Phase Epitaxy","authors":"H. Yamaguchi, T. Nagira, Z. Kawazu, K. Ono, M. Takemi","doi":"10.1109/ICIPRM.2013.6562581","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562581","url":null,"abstract":"Ruthenium (Ru) as the semi-insulated doping material for InP has good characteristics in terms of the capacitance and heat dissipation of the current blocking layer for Laser Diodes. However unintentional Zn diffusion from adjacent p-InP into Ru-InP causes the degradation of Laser characteristics such as the output power. In this paper, we fabricated p-InP/Ru-InP/pInP (p/Ru/p-InP) structure by Metalorganic Vapor Phase Epitaxy (MOVPE) and analyzed the behavior of Zn diffusion from Zn-InP into Ru-InP after annealing by SIMS measurement.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128914318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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