Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562615
J. Reithmaier, V. Ivanov, V. Sichkovskyi, C. Gilfert, A. Rippien, F. Schnabel, D. Gready, G. Eisenstein
With high modal gain InAs/AlGaInAs/InP quantum dot laser material short cavity ridge waveguide lasers were fabricated with cavity lengths down to 275 μm. These devices show new record values in direct digital signal modulation at 22 GBit/s. In addition also strong improvement are expected from this laser material in the static properties, in particular on the linewidth due to the suppression of the linewidth enhancement factor. First distributed feedback lasers on similar quantum dot laser material were processed and preliminary linewidth measurements indicate a significant linewidth reduction. Quantitative investigations are under way and will be presented at the conference.
{"title":"Static and dynamic characteristics of InAs/AlGaInAs/InP quantum dot lasers operating at 1550 nm","authors":"J. Reithmaier, V. Ivanov, V. Sichkovskyi, C. Gilfert, A. Rippien, F. Schnabel, D. Gready, G. Eisenstein","doi":"10.1109/ICIPRM.2013.6562615","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562615","url":null,"abstract":"With high modal gain InAs/AlGaInAs/InP quantum dot laser material short cavity ridge waveguide lasers were fabricated with cavity lengths down to 275 μm. These devices show new record values in direct digital signal modulation at 22 GBit/s. In addition also strong improvement are expected from this laser material in the static properties, in particular on the linewidth due to the suppression of the linewidth enhancement factor. First distributed feedback lasers on similar quantum dot laser material were processed and preliminary linewidth measurements indicate a significant linewidth reduction. Quantitative investigations are under way and will be presented at the conference.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132661780","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562628
F. Soares, J. Kreissl, M. Theurer, E. Bitincka, T. Goebel, M. Moehrle, N. Grote
A generic InP based monolithic photonic integration platform is introduced that is capable of simultaneously incorporating transmitter, receiver and passive-optical functionalities. On this basis, an integrated transmitter component for THz applications has been implemented.
{"title":"Transmitter PIC for THz applications based on generic integration technology","authors":"F. Soares, J. Kreissl, M. Theurer, E. Bitincka, T. Goebel, M. Moehrle, N. Grote","doi":"10.1109/ICIPRM.2013.6562628","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562628","url":null,"abstract":"A generic InP based monolithic photonic integration platform is introduced that is capable of simultaneously incorporating transmitter, receiver and passive-optical functionalities. On this basis, an integrated transmitter component for THz applications has been implemented.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132818006","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562589
O. Benner, A. Lysov, C. Gutsche, G. Keller, C. Schmidt, W. Prost, F. Tegude
Nanowire FETs with all-around Junction-Gate are demonstrated using GaAs core-shell nanowires. The electrical properties of the n-channel Junction FET were determined by DC measurements. The radial pn-junctions show diode-type I-V characteristics. The output and transfer I-V characteristics exhibit good pinch-off, and hysteresis-free transient behavior. First devices with 190 nm nanowire channel diameter show a drain current of ID = 260 nA and a transconductance of gm = 300 nS.
{"title":"Junction field-effect transistor based on GaAs core-shell nanowires","authors":"O. Benner, A. Lysov, C. Gutsche, G. Keller, C. Schmidt, W. Prost, F. Tegude","doi":"10.1109/ICIPRM.2013.6562589","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562589","url":null,"abstract":"Nanowire FETs with all-around Junction-Gate are demonstrated using GaAs core-shell nanowires. The electrical properties of the n-channel Junction FET were determined by DC measurements. The radial pn-junctions show diode-type I-V characteristics. The output and transfer I-V characteristics exhibit good pinch-off, and hysteresis-free transient behavior. First devices with 190 nm nanowire channel diameter show a drain current of ID = 260 nA and a transconductance of gm = 300 nS.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134239353","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562605
A. Endoh, I. Watanabe, A. Kasamatsu, T. Mimura
We carried out Monte Carlo (MC) simulation of InAlAs/InGaAs high electron mobility transistors (HEMTs) with buried gate. We employed a T-shaped structure as a gate electrode. The maximum transconductance gm_max and gate capacitance Cg increase with increasing the buried depth d. The extent of increase in the gm_max is more than that in Cg. As a result, the cutoff frequency fT increases with increase the buried depth d. These phenomena agree with our previous experimental results.
{"title":"Monte Carlo simulation of InAlAs/InGaAs HEMTs with buried gate","authors":"A. Endoh, I. Watanabe, A. Kasamatsu, T. Mimura","doi":"10.1109/ICIPRM.2013.6562605","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562605","url":null,"abstract":"We carried out Monte Carlo (MC) simulation of InAlAs/InGaAs high electron mobility transistors (HEMTs) with buried gate. We employed a T-shaped structure as a gate electrode. The maximum transconductance g<sub>m_max</sub> and gate capacitance C<sub>g</sub> increase with increasing the buried depth d. The extent of increase in the g<sub>m_max</sub> is more than that in C<sub>g</sub>. As a result, the cutoff frequency f<sub>T</sub> increases with increase the buried depth d. These phenomena agree with our previous experimental results.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132597149","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562609
G. Boehm, S. Sprengel, K. Vizbaras, C. Grasse, T. Gruendl, R. Meyer, M. Amann
This work shows different approaches to cover the spectral range from 2 to 4 μm with active regions based on InP and GaSb for devices suitable as light sources for gas-sensing applications. For shorter wavelengths up to 2.3 μm type-I InP-based quantum wells with rectangular and triangular shape are the preferred choice, beyond that GaSb-based type-I active regions were studied to cover the wavelengths up to 4 μm. An alternative method is implementing type-II structures on InP to exploit the advantages of this well-known material system for device fabrication. For the different methods device designs, growth issues and applications will be discussed.
{"title":"Light emission between 2 and 4 µm: Innovative active region designs for InP- and GaSb-based devices","authors":"G. Boehm, S. Sprengel, K. Vizbaras, C. Grasse, T. Gruendl, R. Meyer, M. Amann","doi":"10.1109/ICIPRM.2013.6562609","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562609","url":null,"abstract":"This work shows different approaches to cover the spectral range from 2 to 4 μm with active regions based on InP and GaSb for devices suitable as light sources for gas-sensing applications. For shorter wavelengths up to 2.3 μm type-I InP-based quantum wells with rectangular and triangular shape are the preferred choice, beyond that GaSb-based type-I active regions were studied to cover the wavelengths up to 4 μm. An alternative method is implementing type-II structures on InP to exploit the advantages of this well-known material system for device fabrication. For the different methods device designs, growth issues and applications will be discussed.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133227709","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562612
H. Yokohama, K. Shiojima, G. Araki
Ethyl-base metal organic materials and pulse-doping technique were employed in C-doped p-InGaAs epitaxial growth. By using triethylindium, a linear relationship between In supply ratio and In content was observed with less growth-temperature variation, comparing with trimethylindium. Pulse-doping for C with CBr4 was significantly suppressed metal organic materials consumption. As a result of that, good controllability of C doping by CBr4 flow and a large carrier density of 1.4 × 1019 cm-3 were achieved.
{"title":"MOCVD growth of carbon-doped InGaAs layers using ethyl-base metal organic materials","authors":"H. Yokohama, K. Shiojima, G. Araki","doi":"10.1109/ICIPRM.2013.6562612","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562612","url":null,"abstract":"Ethyl-base metal organic materials and pulse-doping technique were employed in C-doped p-InGaAs epitaxial growth. By using triethylindium, a linear relationship between In supply ratio and In content was observed with less growth-temperature variation, comparing with trimethylindium. Pulse-doping for C with CBr4 was significantly suppressed metal organic materials consumption. As a result of that, good controllability of C doping by CBr4 flow and a large carrier density of 1.4 × 1019 cm-3 were achieved.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115342007","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562584
D. Kanbayashi, T. Hishida, M. Tomita, H. Takakura, T. Maruyama, S. Naritsuka
Liquid-Phase Electroepitaxy of c-plane GaN was tried to perform using NH3 and a mixed solution of Ga and Ge. Consequently, GaN layer was successfully grown at the atmospheric pressure. The thickness of the grown layer was found to monotonously increase with the current. The thickness of the layer grown with the current of 4 A was more than twice of that of the conventional LPE. The growth thickness shows almost no change by the change of the thickness of the solution. This result strongly suggests the growth was driven mainly by the electromigration, which was caused by the current flow through the solution.
{"title":"Liquid-Phase Electroepitaxy of GaN at atmospheric pressure using ammonia and Ga-Ge solution","authors":"D. Kanbayashi, T. Hishida, M. Tomita, H. Takakura, T. Maruyama, S. Naritsuka","doi":"10.1109/ICIPRM.2013.6562584","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562584","url":null,"abstract":"Liquid-Phase Electroepitaxy of c-plane GaN was tried to perform using NH3 and a mixed solution of Ga and Ge. Consequently, GaN layer was successfully grown at the atmospheric pressure. The thickness of the grown layer was found to monotonously increase with the current. The thickness of the layer grown with the current of 4 A was more than twice of that of the conventional LPE. The growth thickness shows almost no change by the change of the thickness of the solution. This result strongly suggests the growth was driven mainly by the electromigration, which was caused by the current flow through the solution.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115761089","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562617
D. Fendler, M. Mohrle, M. Spiegelberg, W. Rehbein, W. Passenberg, N. Grote
1480nm InGaAsP large optical cavity broad-area laser diodes were developed and optimized for pulsed operation showing optical output power of >18W at 20°C. Furthermore the μs pulse duration regime was investigated with respect to power saturation and self-heating at elevated operating currents.
{"title":"1480nm InGaAsP LOC broad-area-lasers with >18W pulsed output power at 20°C","authors":"D. Fendler, M. Mohrle, M. Spiegelberg, W. Rehbein, W. Passenberg, N. Grote","doi":"10.1109/ICIPRM.2013.6562617","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562617","url":null,"abstract":"1480nm InGaAsP large optical cavity broad-area laser diodes were developed and optimized for pulsed operation showing optical output power of >18W at 20°C. Furthermore the μs pulse duration regime was investigated with respect to power saturation and self-heating at elevated operating currents.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123181158","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562636
K. Takeda, Tomonari Sato, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, T. Kakitsuka, M. Notomi, S. Matsuo
We demonstrated the direct modulation of photonic-crystal nanocavity lasers to realize on-chip optical interconnects. A maximum 3-dB bandwidth of 16.2 GHz was obtained. We achieved a 17-Gb/s eye opening with a 35.3-fJ/bit energy cost.
{"title":"17-Gb/s direct modulation of lambda-scale embedded active region photonic crystal lasers","authors":"K. Takeda, Tomonari Sato, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, T. Kakitsuka, M. Notomi, S. Matsuo","doi":"10.1109/ICIPRM.2013.6562636","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562636","url":null,"abstract":"We demonstrated the direct modulation of photonic-crystal nanocavity lasers to realize on-chip optical interconnects. A maximum 3-dB bandwidth of 16.2 GHz was obtained. We achieved a 17-Gb/s eye opening with a 35.3-fJ/bit energy cost.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126165573","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562570
Takeaki Saikai, Takahiro Yamamoto, H. Yasaka, E. Yamada
A nine-channel optical frequency comb block with a low intensity deviation is generated successfully by adopting an asymmetric push-pull drive method for a symmetric dual drive Mach-Zehnder modulator. The flat-top optical frequency comb block with an intensity deviation of less than 1 dB is realized for the first time by using a compact and low-drive voltage InP-based Mach-Zehnder modulator.
{"title":"Flat-top optical frequency comb block generation using InP-based Mach-Zehnder modulator","authors":"Takeaki Saikai, Takahiro Yamamoto, H. Yasaka, E. Yamada","doi":"10.1109/ICIPRM.2013.6562570","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562570","url":null,"abstract":"A nine-channel optical frequency comb block with a low intensity deviation is generated successfully by adopting an asymmetric push-pull drive method for a symmetric dual drive Mach-Zehnder modulator. The flat-top optical frequency comb block with an intensity deviation of less than 1 dB is realized for the first time by using a compact and low-drive voltage InP-based Mach-Zehnder modulator.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121573275","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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