Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562587
C. Robert, C. Cornet, K. Pereira da Silva, P. Turban, S. Mauger, T. Nguyen Thanh, J. Even, J. Jancu, M. Perrin, H. Folliot, T. Rohel, S. Tricot, A. Balocchi, P. Barate, X. Marie, P. Koenraad, M. Alonso, A. Goi, N. Bertru, O. Durand, A. Le Corre
The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen in QDs is finally shown.
{"title":"Nature of the optical transition in (In,Ga)As(N)/GaP quantum dots (QDs): Effect of QD size, indium composition and nitrogen incorporation","authors":"C. Robert, C. Cornet, K. Pereira da Silva, P. Turban, S. Mauger, T. Nguyen Thanh, J. Even, J. Jancu, M. Perrin, H. Folliot, T. Rohel, S. Tricot, A. Balocchi, P. Barate, X. Marie, P. Koenraad, M. Alonso, A. Goi, N. Bertru, O. Durand, A. Le Corre","doi":"10.1109/ICIPRM.2013.6562587","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562587","url":null,"abstract":"The structural properties of (In,Ga)As/GaP quantum dots (QDs) are studied by plane view and cross scanning tunneling microscopy. Time-resolved and pressure dependent photoluminescence experiments show a ground optical transition of indirect type. Mixed k.p/tight-binding simulations indicate a possible indirect to direct crossover depending on indium content and QD size. The incorporation of nitrogen in QDs is finally shown.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"23 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132025806","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562632
S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
Effects of channel-thickness-fluctuation scattering on electron mobility have been analyzed and it was found that channel-thickness-fluctuation scattering is important parameters decide mobility in ETB III-V-OI MOSFETs. Also, we have clarified that the introduction of MOS interface buffer layer is effective to enhance mobility through the increase of μfluctuation.
{"title":"Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs","authors":"S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi","doi":"10.1109/ICIPRM.2013.6562632","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562632","url":null,"abstract":"Effects of channel-thickness-fluctuation scattering on electron mobility have been analyzed and it was found that channel-thickness-fluctuation scattering is important parameters decide mobility in ETB III-V-OI MOSFETs. Also, we have clarified that the introduction of MOS interface buffer layer is effective to enhance mobility through the increase of μfluctuation.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"79 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125480221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562643
M. Abe, K. Ang, R. Hofstetter, Hong Wang, G. Ng
Novel thermopile based on modulation doped AlGaAs/InGaAs heterostructures is proposed and developed for uncooled infrared FPA (Focal Plane Array) image sensor application. The high sensitivity performance is designed to be the responsivity R of 33,000 V/W with the response time IJ of 8 ms, and the high speed performance is designed to be R of 4,900 V/W with IJ of 110 μs, under the 2 μm design rule. Based on integrated HEMT-MEMS technology, the 32×32 matrix FPA is fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA application.
{"title":"High performance modulation doped AlGaAs/InGaAs thermopiles (H-PILEs) for uncooled IR FPA utilizing integrated HEMT-MEMS technology","authors":"M. Abe, K. Ang, R. Hofstetter, Hong Wang, G. Ng","doi":"10.1109/ICIPRM.2013.6562643","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562643","url":null,"abstract":"Novel thermopile based on modulation doped AlGaAs/InGaAs heterostructures is proposed and developed for uncooled infrared FPA (Focal Plane Array) image sensor application. The high sensitivity performance is designed to be the responsivity R of 33,000 V/W with the response time IJ of 8 ms, and the high speed performance is designed to be R of 4,900 V/W with IJ of 110 μs, under the 2 μm design rule. Based on integrated HEMT-MEMS technology, the 32×32 matrix FPA is fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA application.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121043781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562571
E. Rouvalis, P. Muller, D. Trommer, J. Stephan, A. Steffan, G. Unterborsch
We report on the design, packaging and experimental characterization of a waveguide photodetector monolithically integrated with a 1×4 MMI coupler and a vertically-tapered spotsize converter. The total device consists of an array of 4 photodiodes connected in parallel in order to increase the saturation current. A 3-dB bandwidth of up to 30 GHz was measured. High output power was achieved with approximately 10 dBm at 10 GHz and 7.5 dBm at 20 GHz. From 1-dB compression measurements at 10 GHz and 2 0 GHz, a saturation photocurrent as high as 40 mA was found. At 10 GHz and 20 GHz a third order intercept point (OIP3) of over 20 dBm was measured for photocurrent levels up to 35 mA.
{"title":"A 1×4 MMI-integrated high-power waveguide photodetector","authors":"E. Rouvalis, P. Muller, D. Trommer, J. Stephan, A. Steffan, G. Unterborsch","doi":"10.1109/ICIPRM.2013.6562571","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562571","url":null,"abstract":"We report on the design, packaging and experimental characterization of a waveguide photodetector monolithically integrated with a 1×4 MMI coupler and a vertically-tapered spotsize converter. The total device consists of an array of 4 photodiodes connected in parallel in order to increase the saturation current. A 3-dB bandwidth of up to 30 GHz was measured. High output power was achieved with approximately 10 dBm at 10 GHz and 7.5 dBm at 20 GHz. From 1-dB compression measurements at 10 GHz and 2 0 GHz, a saturation photocurrent as high as 40 mA was found. At 10 GHz and 20 GHz a third order intercept point (OIP3) of over 20 dBm was measured for photocurrent levels up to 35 mA.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131560524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562621
Y. Hayashi, K. Fukuda, R. Osabe, Jun-ichi Suzuki, Y. Atsumi, Joonhyun Kang, N. Nishiyama, S. Arai
Novel configuration of multi-functional SOA array by III-V/Si hybrid technique using one-time III-V/Si wafer bonding is proposed. A III-V/Si hybrid structure can realize multi-functional SOA array with different gain characteristics by tuning Si waveguide width.
{"title":"Design of multi-functional GaInAsP/Si hybrid semiconductor optical amplifier array with AlInAs-oxide current confinement layer","authors":"Y. Hayashi, K. Fukuda, R. Osabe, Jun-ichi Suzuki, Y. Atsumi, Joonhyun Kang, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2013.6562621","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562621","url":null,"abstract":"Novel configuration of multi-functional SOA array by III-V/Si hybrid technique using one-time III-V/Si wafer bonding is proposed. A III-V/Si hybrid structure can realize multi-functional SOA array with different gain characteristics by tuning Si waveguide width.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122885042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562625
J. Decobert, P. Lagrée, H. Guerault, C. Kazmierski
We present a generic integration platform based on the SAG of AlGaInAs/InP MQW material. For efficient bandgap engineering of the different areas of the PICs, active and passive function heterostructures are precisely modeled and characterized in the SAG zones. This approach has allowed to design novel high-speed InP-based PIC.
{"title":"AlGaInAs selective area growth for high-speed EAM-based PIC sources","authors":"J. Decobert, P. Lagrée, H. Guerault, C. Kazmierski","doi":"10.1109/ICIPRM.2013.6562625","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562625","url":null,"abstract":"We present a generic integration platform based on the SAG of AlGaInAs/InP MQW material. For efficient bandgap engineering of the different areas of the PICs, active and passive function heterostructures are precisely modeled and characterized in the SAG zones. This approach has allowed to design novel high-speed InP-based PIC.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124449389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562594
C. Paranthoen, C. Levallois, J. Gauthier, F. Taleb, N. Chevalier, M. Perrin, Y. Léger, O. de Sagazan, A. Le Corre
We report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.
{"title":"1540 to 1645 nm continuous VCSEL emission based on quantum dashes","authors":"C. Paranthoen, C. Levallois, J. Gauthier, F. Taleb, N. Chevalier, M. Perrin, Y. Léger, O. de Sagazan, A. Le Corre","doi":"10.1109/ICIPRM.2013.6562594","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562594","url":null,"abstract":"We report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116137090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562627
Y. Ueda, T. Fujisawa, K. Takahata, M. Kohtoku, H. Takahashi, H. Ishii
We developed a reflection-type 4x1 transversal filter (TF) on an InP substrate as a compact and low-loss wavelength multiplexer (MUX) for monolithically integrated light source arrays. The filter has a satisfactory MUX function and is very compact of about 900 Pm x 50 Pm which is one twentieth of a size of a conventional 4x1 TF. It is suitable for a MUX of a monolithically integrated light source array thanks to its compactness and input/output-port arrangement.
我们在InP衬底上开发了一种反射型4x1横向滤波器(TF)，作为单片集成光源阵列的紧凑低损耗波长多路复用器(MUX)。该滤波器具有令人满意的MUX功能，并且非常紧凑，约为900 Pm x 50 Pm，是传统4x1 TF尺寸的二十分之一。由于其紧凑性和输入/输出端口的安排，它适用于单片集成光源阵列的MUX。
{"title":"InP-based compact reflection-type transversal filter","authors":"Y. Ueda, T. Fujisawa, K. Takahata, M. Kohtoku, H. Takahashi, H. Ishii","doi":"10.1109/ICIPRM.2013.6562627","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562627","url":null,"abstract":"We developed a reflection-type 4x1 transversal filter (TF) on an InP substrate as a compact and low-loss wavelength multiplexer (MUX) for monolithically integrated light source arrays. The filter has a satisfactory MUX function and is very compact of about 900 Pm x 50 Pm which is one twentieth of a size of a conventional 4x1 TF. It is suitable for a MUX of a monolithically integrated light source array thanks to its compactness and input/output-port arrangement.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116678112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562592
H. Kataria, W. Metaferia, M. Nagarajan, C. Junesand, Y. Sun, S. Lourdudoss
We present the carrier-transport, optical and structural properties of InP deposited on Si by Epitaxial Lateral Overgrowth (ELOG) in a Low Pressure-Hydride Vapor phase epitaxy (LP-HVPE). Hall measurements, micro photoluminescence (μ-PL) and X-ray diffraction (XRD) were used to study the above-mentioned respective properties at room temperature. It is the first time that electrical properties of ELOG InP on Si are studied by Hall measurements. Prior to ELOG, etching of patterned silicon dioxide (SiO2) mask leading to a high aspect ratio, i. e. mask thickness to opening width >2 was optimized to eliminate defect propagation even above the opening. Dense high aspect ratio structures were fabricated in SiO2 to obtain ELOG InP on Si, coalesced over large area, making it feasible to perform Hall measurements. We examine this method and study Hall mobility, strain and optical quality of large area ELOG InP on Si.
本文研究了在低压氢化物气相外延(LP-HVPE)中通过外延横向过度生长(ELOG)沉积在Si上的InP的载流子输运、光学和结构性质。采用霍尔测量、微光致发光(μ-PL)和x射线衍射(XRD)等方法研究了上述材料在室温下的性能。这是首次用霍尔测量方法研究了ELOG InP在Si上的电学性质。在ELOG之前，对图案二氧化硅(SiO2)掩模的蚀刻进行了优化，导致高长宽比，即掩模厚度与开口宽度>2，以消除甚至在开口以上的缺陷传播。在SiO2上制备致密的高纵横比结构，得到大面积聚结的ELOG InP on Si，使霍尔测量成为可能。我们检验了这种方法，并研究了大面积ELOG InP的霍尔迁移率、应变和光学质量。
{"title":"Carrier-transport, optical and structural properties of large area ELOG InP on Si using conventional optical lithography","authors":"H. Kataria, W. Metaferia, M. Nagarajan, C. Junesand, Y. Sun, S. Lourdudoss","doi":"10.1109/ICIPRM.2013.6562592","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562592","url":null,"abstract":"We present the carrier-transport, optical and structural properties of InP deposited on Si by Epitaxial Lateral Overgrowth (ELOG) in a Low Pressure-Hydride Vapor phase epitaxy (LP-HVPE). Hall measurements, micro photoluminescence (μ-PL) and X-ray diffraction (XRD) were used to study the above-mentioned respective properties at room temperature. It is the first time that electrical properties of ELOG InP on Si are studied by Hall measurements. Prior to ELOG, etching of patterned silicon dioxide (SiO2) mask leading to a high aspect ratio, i. e. mask thickness to opening width >2 was optimized to eliminate defect propagation even above the opening. Dense high aspect ratio structures were fabricated in SiO2 to obtain ELOG InP on Si, coalesced over large area, making it feasible to perform Hall measurements. We examine this method and study Hall mobility, strain and optical quality of large area ELOG InP on Si.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115320161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562646
S. Sarkozy, X. Mei, W. Yoshida, Po-Hsin Liu, L. Lee, Joe X. Zhou, K. Leong, V. Radisic, W. Deal, R. Lai
This paper reports on the process and technology of the sub-50nm InP HEMT MMIC process which has enabled signal amplification up to 670 GHz. In particular, considerations not commonly addressed such as the related processing requirements and uniformity of transistors to establish working chipsets are discussed. Finally, initial burn in data is presented as the technology evolves from a research and development process to production.
{"title":"Sub-50nm indium phosphide high electron mobility transistor technology for terahertz monolithic microwave integrated circuits and systems","authors":"S. Sarkozy, X. Mei, W. Yoshida, Po-Hsin Liu, L. Lee, Joe X. Zhou, K. Leong, V. Radisic, W. Deal, R. Lai","doi":"10.1109/ICIPRM.2013.6562646","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562646","url":null,"abstract":"This paper reports on the process and technology of the sub-50nm InP HEMT MMIC process which has enabled signal amplification up to 670 GHz. In particular, considerations not commonly addressed such as the related processing requirements and uniformity of transistors to establish working chipsets are discussed. Finally, initial burn in data is presented as the technology evolves from a research and development process to production.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125384497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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