Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562632
S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi
Effects of channel-thickness-fluctuation scattering on electron mobility have been analyzed and it was found that channel-thickness-fluctuation scattering is important parameters decide mobility in ETB III-V-OI MOSFETs. Also, we have clarified that the introduction of MOS interface buffer layer is effective to enhance mobility through the increase of μfluctuation.
{"title":"Analysis on channel thickness fluctuation scattering in InGaAs-OI MOSFETs","authors":"S. H. Kim, M. Yokoyama, R. Nakane, O. Ichikawa, T. Osada, M. Hata, M. Takenaka, S. Takagi","doi":"10.1109/ICIPRM.2013.6562632","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562632","url":null,"abstract":"Effects of channel-thickness-fluctuation scattering on electron mobility have been analyzed and it was found that channel-thickness-fluctuation scattering is important parameters decide mobility in ETB III-V-OI MOSFETs. Also, we have clarified that the introduction of MOS interface buffer layer is effective to enhance mobility through the increase of μfluctuation.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125480221","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562643
M. Abe, K. Ang, R. Hofstetter, Hong Wang, G. Ng
Novel thermopile based on modulation doped AlGaAs/InGaAs heterostructures is proposed and developed for uncooled infrared FPA (Focal Plane Array) image sensor application. The high sensitivity performance is designed to be the responsivity R of 33,000 V/W with the response time IJ of 8 ms, and the high speed performance is designed to be R of 4,900 V/W with IJ of 110 μs, under the 2 μm design rule. Based on integrated HEMT-MEMS technology, the 32×32 matrix FPA is fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA application.
{"title":"High performance modulation doped AlGaAs/InGaAs thermopiles (H-PILEs) for uncooled IR FPA utilizing integrated HEMT-MEMS technology","authors":"M. Abe, K. Ang, R. Hofstetter, Hong Wang, G. Ng","doi":"10.1109/ICIPRM.2013.6562643","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562643","url":null,"abstract":"Novel thermopile based on modulation doped AlGaAs/InGaAs heterostructures is proposed and developed for uncooled infrared FPA (Focal Plane Array) image sensor application. The high sensitivity performance is designed to be the responsivity R of 33,000 V/W with the response time IJ of 8 ms, and the high speed performance is designed to be R of 4,900 V/W with IJ of 110 μs, under the 2 μm design rule. Based on integrated HEMT-MEMS technology, the 32×32 matrix FPA is fabricated to demonstrate its enhanced performances by black body measurement. The technology presented here demonstrates the potential of this approach for low-cost uncooled infrared FPA application.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121043781","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562571
E. Rouvalis, P. Muller, D. Trommer, J. Stephan, A. Steffan, G. Unterborsch
We report on the design, packaging and experimental characterization of a waveguide photodetector monolithically integrated with a 1×4 MMI coupler and a vertically-tapered spotsize converter. The total device consists of an array of 4 photodiodes connected in parallel in order to increase the saturation current. A 3-dB bandwidth of up to 30 GHz was measured. High output power was achieved with approximately 10 dBm at 10 GHz and 7.5 dBm at 20 GHz. From 1-dB compression measurements at 10 GHz and 2 0 GHz, a saturation photocurrent as high as 40 mA was found. At 10 GHz and 20 GHz a third order intercept point (OIP3) of over 20 dBm was measured for photocurrent levels up to 35 mA.
{"title":"A 1×4 MMI-integrated high-power waveguide photodetector","authors":"E. Rouvalis, P. Muller, D. Trommer, J. Stephan, A. Steffan, G. Unterborsch","doi":"10.1109/ICIPRM.2013.6562571","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562571","url":null,"abstract":"We report on the design, packaging and experimental characterization of a waveguide photodetector monolithically integrated with a 1×4 MMI coupler and a vertically-tapered spotsize converter. The total device consists of an array of 4 photodiodes connected in parallel in order to increase the saturation current. A 3-dB bandwidth of up to 30 GHz was measured. High output power was achieved with approximately 10 dBm at 10 GHz and 7.5 dBm at 20 GHz. From 1-dB compression measurements at 10 GHz and 2 0 GHz, a saturation photocurrent as high as 40 mA was found. At 10 GHz and 20 GHz a third order intercept point (OIP3) of over 20 dBm was measured for photocurrent levels up to 35 mA.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131560524","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562591
Jieun Lee, Y. Yamahara, M. Futami, T. Shindo, T. Amemiya, N. Nishiyama, S. Arai
As a photonic integration method of semiconductor membrane structure, quantum-well-intermixing (QWI) process using O2-sputtered SiO2 mask was investigated by comparing the photoluminescence peak wavelength shift between two sections with/without the SiO2 mask. As the result, a large bandgap wavelength difference of 80 nm (47 meV) was obtained while quite large transient region (90 μm) was observed. Since this fact was considered to be attributed to the temperature gradient along the masked and window regions during the rapid thermal annealing (RTA) process, we deposited CVD SiO2 (which has smaller vacancies than O2-sputtered SiO2 hence the bandgap wavelength shift is smaller) on the entire surface after forming O2-sputtered SiO2 mask pattern and successfully reduced the transient region length to less than 5 μm.
{"title":"Bandgap wavelength shift in quantum well intermixing using different SiO2 masks for photonic integration","authors":"Jieun Lee, Y. Yamahara, M. Futami, T. Shindo, T. Amemiya, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2013.6562591","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562591","url":null,"abstract":"As a photonic integration method of semiconductor membrane structure, quantum-well-intermixing (QWI) process using O<sub>2</sub>-sputtered SiO<sub>2</sub> mask was investigated by comparing the photoluminescence peak wavelength shift between two sections with/without the SiO<sub>2</sub> mask. As the result, a large bandgap wavelength difference of 80 nm (47 meV) was obtained while quite large transient region (90 μm) was observed. Since this fact was considered to be attributed to the temperature gradient along the masked and window regions during the rapid thermal annealing (RTA) process, we deposited CVD SiO<sub>2</sub> (which has smaller vacancies than O<sub>2</sub>-sputtered SiO<sub>2</sub> hence the bandgap wavelength shift is smaller) on the entire surface after forming O<sub>2</sub>-sputtered SiO<sub>2</sub> mask pattern and successfully reduced the transient region length to less than 5 μm.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115359047","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562567
X. Liu, N. Kobayashi, K. Akahane, M. Sasaki, H. Kumano, I. Suemune
We report on the experimental demonstration of single-photon source based on a single InAs quantum dot emitting in the telecommunication band. The low-density quantum dots grown by epitaxial method are embedded in an asetched pillar structure. Photoluminescence spectrum of a single InAs quantum dot exhibits intense and narrow emission lines. Photon antibunching behavior is clearly observed using superconducting single-photon detectors with high sensitivity, which indicates the single-photon emission.
{"title":"Single-photon emission in telecommunication band from an InAs quantum dot in a pillar structure","authors":"X. Liu, N. Kobayashi, K. Akahane, M. Sasaki, H. Kumano, I. Suemune","doi":"10.1109/ICIPRM.2013.6562567","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562567","url":null,"abstract":"We report on the experimental demonstration of single-photon source based on a single InAs quantum dot emitting in the telecommunication band. The low-density quantum dots grown by epitaxial method are embedded in an asetched pillar structure. Photoluminescence spectrum of a single InAs quantum dot exhibits intense and narrow emission lines. Photon antibunching behavior is clearly observed using superconducting single-photon detectors with high sensitivity, which indicates the single-photon emission.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115930173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562594
C. Paranthoen, C. Levallois, J. Gauthier, F. Taleb, N. Chevalier, M. Perrin, Y. Léger, O. de Sagazan, A. Le Corre
We report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.
{"title":"1540 to 1645 nm continuous VCSEL emission based on quantum dashes","authors":"C. Paranthoen, C. Levallois, J. Gauthier, F. Taleb, N. Chevalier, M. Perrin, Y. Léger, O. de Sagazan, A. Le Corre","doi":"10.1109/ICIPRM.2013.6562594","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562594","url":null,"abstract":"We report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116137090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562592
H. Kataria, W. Metaferia, M. Nagarajan, C. Junesand, Y. Sun, S. Lourdudoss
We present the carrier-transport, optical and structural properties of InP deposited on Si by Epitaxial Lateral Overgrowth (ELOG) in a Low Pressure-Hydride Vapor phase epitaxy (LP-HVPE). Hall measurements, micro photoluminescence (μ-PL) and X-ray diffraction (XRD) were used to study the above-mentioned respective properties at room temperature. It is the first time that electrical properties of ELOG InP on Si are studied by Hall measurements. Prior to ELOG, etching of patterned silicon dioxide (SiO2) mask leading to a high aspect ratio, i. e. mask thickness to opening width >2 was optimized to eliminate defect propagation even above the opening. Dense high aspect ratio structures were fabricated in SiO2 to obtain ELOG InP on Si, coalesced over large area, making it feasible to perform Hall measurements. We examine this method and study Hall mobility, strain and optical quality of large area ELOG InP on Si.
本文研究了在低压氢化物气相外延(LP-HVPE)中通过外延横向过度生长(ELOG)沉积在Si上的InP的载流子输运、光学和结构性质。采用霍尔测量、微光致发光(μ-PL)和x射线衍射(XRD)等方法研究了上述材料在室温下的性能。这是首次用霍尔测量方法研究了ELOG InP在Si上的电学性质。在ELOG之前，对图案二氧化硅(SiO2)掩模的蚀刻进行了优化，导致高长宽比，即掩模厚度与开口宽度>2，以消除甚至在开口以上的缺陷传播。在SiO2上制备致密的高纵横比结构，得到大面积聚结的ELOG InP on Si，使霍尔测量成为可能。我们检验了这种方法，并研究了大面积ELOG InP的霍尔迁移率、应变和光学质量。
{"title":"Carrier-transport, optical and structural properties of large area ELOG InP on Si using conventional optical lithography","authors":"H. Kataria, W. Metaferia, M. Nagarajan, C. Junesand, Y. Sun, S. Lourdudoss","doi":"10.1109/ICIPRM.2013.6562592","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562592","url":null,"abstract":"We present the carrier-transport, optical and structural properties of InP deposited on Si by Epitaxial Lateral Overgrowth (ELOG) in a Low Pressure-Hydride Vapor phase epitaxy (LP-HVPE). Hall measurements, micro photoluminescence (μ-PL) and X-ray diffraction (XRD) were used to study the above-mentioned respective properties at room temperature. It is the first time that electrical properties of ELOG InP on Si are studied by Hall measurements. Prior to ELOG, etching of patterned silicon dioxide (SiO2) mask leading to a high aspect ratio, i. e. mask thickness to opening width >2 was optimized to eliminate defect propagation even above the opening. Dense high aspect ratio structures were fabricated in SiO2 to obtain ELOG InP on Si, coalesced over large area, making it feasible to perform Hall measurements. We examine this method and study Hall mobility, strain and optical quality of large area ELOG InP on Si.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115320161","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562625
J. Decobert, P. Lagrée, H. Guerault, C. Kazmierski
We present a generic integration platform based on the SAG of AlGaInAs/InP MQW material. For efficient bandgap engineering of the different areas of the PICs, active and passive function heterostructures are precisely modeled and characterized in the SAG zones. This approach has allowed to design novel high-speed InP-based PIC.
{"title":"AlGaInAs selective area growth for high-speed EAM-based PIC sources","authors":"J. Decobert, P. Lagrée, H. Guerault, C. Kazmierski","doi":"10.1109/ICIPRM.2013.6562625","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562625","url":null,"abstract":"We present a generic integration platform based on the SAG of AlGaInAs/InP MQW material. For efficient bandgap engineering of the different areas of the PICs, active and passive function heterostructures are precisely modeled and characterized in the SAG zones. This approach has allowed to design novel high-speed InP-based PIC.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124449389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562576
Y. Shimogaki, M. Sugiyama, Y. Nakano
Numerical simulation on growth rate non-uniformity of selective area growth (SAG) in metal-organic vapor phase epitaxy (MOVPE) is an effective method to examine the surface reaction kinetics, which is normally hindered by mass transport rate of precursors. SAG is also an effective tool to fabricate opto-electronic integrated circuits (OEICs) to reduce the process steps. In the present talk, the kinetic analyses on InGaAsP and InGaN MOVPE processes using SAG will be presented.
{"title":"Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs","authors":"Y. Shimogaki, M. Sugiyama, Y. Nakano","doi":"10.1109/ICIPRM.2013.6562576","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562576","url":null,"abstract":"Numerical simulation on growth rate non-uniformity of selective area growth (SAG) in metal-organic vapor phase epitaxy (MOVPE) is an effective method to examine the surface reaction kinetics, which is normally hindered by mass transport rate of precursors. SAG is also an effective tool to fabricate opto-electronic integrated circuits (OEICs) to reduce the process steps. In the present talk, the kinetic analyses on InGaAsP and InGaN MOVPE processes using SAG will be presented.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123678649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562621
Y. Hayashi, K. Fukuda, R. Osabe, Jun-ichi Suzuki, Y. Atsumi, Joonhyun Kang, N. Nishiyama, S. Arai
Novel configuration of multi-functional SOA array by III-V/Si hybrid technique using one-time III-V/Si wafer bonding is proposed. A III-V/Si hybrid structure can realize multi-functional SOA array with different gain characteristics by tuning Si waveguide width.
{"title":"Design of multi-functional GaInAsP/Si hybrid semiconductor optical amplifier array with AlInAs-oxide current confinement layer","authors":"Y. Hayashi, K. Fukuda, R. Osabe, Jun-ichi Suzuki, Y. Atsumi, Joonhyun Kang, N. Nishiyama, S. Arai","doi":"10.1109/ICIPRM.2013.6562621","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562621","url":null,"abstract":"Novel configuration of multi-functional SOA array by III-V/Si hybrid technique using one-time III-V/Si wafer bonding is proposed. A III-V/Si hybrid structure can realize multi-functional SOA array with different gain characteristics by tuning Si waveguide width.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122885042","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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