Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562590
M. Steidl, A. Paszuk, Weihong Zhao, S. Bruckner, A. Dobrich, O. Supplie, Johannes Luczak, P. Kleinschmidt, H. Doscher, T. Hannappel
We studied the preparation of the clean Si(111) surface in H2 ambient with in situ reflection anisotropy spectroscopy and UHV-based surface science tools after contamination-free transfer. X-ray photoelectron spectroscopy confirmed complete oxide removal after high-temperature annealing. In situ RAS enabled observation of the oxide removal in dependence of process temperature. Monohydride termination was verified by Fourier transform infrared spectroscopy which agrees with a (1×1) surface reconstruction we observed by scanning tunneling microscopy and low energy electron diffraction. By atomic force microscopy analysis of the morphology, we found that wet-chemical pretreatment has an impact on the different silicon surfaces we have prepared, including homoepitaxy and termination of silicon with arsenic.
{"title":"MOVPE-preparation of Si(111) surfaces for III–V nanowire growth","authors":"M. Steidl, A. Paszuk, Weihong Zhao, S. Bruckner, A. Dobrich, O. Supplie, Johannes Luczak, P. Kleinschmidt, H. Doscher, T. Hannappel","doi":"10.1109/ICIPRM.2013.6562590","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562590","url":null,"abstract":"We studied the preparation of the clean Si(111) surface in H2 ambient with in situ reflection anisotropy spectroscopy and UHV-based surface science tools after contamination-free transfer. X-ray photoelectron spectroscopy confirmed complete oxide removal after high-temperature annealing. In situ RAS enabled observation of the oxide removal in dependence of process temperature. Monohydride termination was verified by Fourier transform infrared spectroscopy which agrees with a (1×1) surface reconstruction we observed by scanning tunneling microscopy and low energy electron diffraction. By atomic force microscopy analysis of the morphology, we found that wet-chemical pretreatment has an impact on the different silicon surfaces we have prepared, including homoepitaxy and termination of silicon with arsenic.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132145818","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562606
V. Drakinskiy, P. Sobis, H. Zhao, T. Bryllert, J. Stake
We present the progress of the technological development of a full e-beam based monolithically integrated Schottky diode process applicable for sub-millimetre wave multipliers and mixers. Evaluation of the process has been done in a number of demonstrators showing state-of-the-art performance, including various multiplier circuits up to 200 GHz with a measured flange efficiency of above 35%, as well as heterodyne receiver front-end modules operating at 340 GHz and 557 GHz with a measured receiver DSB noise temperature of below 700 K and 1300 K respectively.
{"title":"Terahertz GaAs Schottky diode mixer and multiplier MIC's based on e-beam technology","authors":"V. Drakinskiy, P. Sobis, H. Zhao, T. Bryllert, J. Stake","doi":"10.1109/ICIPRM.2013.6562606","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562606","url":null,"abstract":"We present the progress of the technological development of a full e-beam based monolithically integrated Schottky diode process applicable for sub-millimetre wave multipliers and mixers. Evaluation of the process has been done in a number of demonstrators showing state-of-the-art performance, including various multiplier circuits up to 200 GHz with a measured flange efficiency of above 35%, as well as heterodyne receiver front-end modules operating at 340 GHz and 557 GHz with a measured receiver DSB noise temperature of below 700 K and 1300 K respectively.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132484389","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562588
S. Luo, H. Ji, Xiaoguang Yang, Tao Yang
We report the optimization of the double-cap (DC) procedure for InAs/InGaAsP/InP quantum dots (QD) grown by metal-organic chemical vapor deposition. By using a combination of optimized thickness of the first cap layer and elevated growth temperature for the second cap layer, the photoluminescence (PL) linewidth of samples with five QD layers is significantly reduced from 124 meV to 87 meV at room temperature. Furthermore, the uniformity of the PL peak intensity and peak energy on the wafer surface is evidently improved. This distribution improvement is especially beneficial for improving device yield per wafer in device fabrication.
{"title":"Optimizing the double-cap procedure for InAs/InGaAsP/InP quantum dots by metal-organic chemical vapor deposition","authors":"S. Luo, H. Ji, Xiaoguang Yang, Tao Yang","doi":"10.1109/ICIPRM.2013.6562588","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562588","url":null,"abstract":"We report the optimization of the double-cap (DC) procedure for InAs/InGaAsP/InP quantum dots (QD) grown by metal-organic chemical vapor deposition. By using a combination of optimized thickness of the first cap layer and elevated growth temperature for the second cap layer, the photoluminescence (PL) linewidth of samples with five QD layers is significantly reduced from 124 meV to 87 meV at room temperature. Furthermore, the uniformity of the PL peak intensity and peak energy on the wafer surface is evidently improved. This distribution improvement is especially beneficial for improving device yield per wafer in device fabrication.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127255581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562619
S. Kanazawa, T. Fujisawa, K. Takahata, A. Ohki, R. Iga, H. Ishii
We developed the first compact 100GbE optical transmitter to use flip-chip interconnects for the first time. The flip-chip interconnects provide low crosstalk and a high modulation bandwidth. Under four-channel simultaneous operation, the 100GBASE-LR4 mask margin of the flip-chip interconnection module was improved by 10% to 27% compared with that of a wire interconnection module.
{"title":"Low crosstalk and high modulation bandwidth 100GbE optical transmitter using flip-chip interconnects","authors":"S. Kanazawa, T. Fujisawa, K. Takahata, A. Ohki, R. Iga, H. Ishii","doi":"10.1109/ICIPRM.2013.6562619","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562619","url":null,"abstract":"We developed the first compact 100GbE optical transmitter to use flip-chip interconnects for the first time. The flip-chip interconnects provide low crosstalk and a high modulation bandwidth. Under four-channel simultaneous operation, the 100GBASE-LR4 mask margin of the flip-chip interconnection module was improved by 10% to 27% compared with that of a wire interconnection module.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125280833","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562629
A. Matsushita, A. Matsumoto, K. Akahane, Y. Matsushima, K. Utaka
We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.
{"title":"Intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrate by SiO2 sputtering and annealing technique","authors":"A. Matsushita, A. Matsumoto, K. Akahane, Y. Matsushima, K. Utaka","doi":"10.1109/ICIPRM.2013.6562629","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562629","url":null,"abstract":"We have studied the intermixing of highly-stacked InAs/InGaAlAs quantum dots grown on InP (311)B substrates by SiO2 sputtering and annealing technique with a low temperature of 650 □ to find a large PL spectral blue-shift by about 60 nm. This result suggests that the low temperature intermixing technique is promising for easy formation of monolithic integrated circuits with the highly-stacked QD structures.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131371126","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-02-13DOI: 10.1109/ICIPRM.2013.6562573
R. Masuyama, H. Yagi, N. Inoue, Y. Onishi, T. Katsuyama, T. Kikuchi, Y. Yoneda, H. Shoji
We have demonstrated monolithic integration of InP-based waveguide photodiodes (WGPDs) with metal-insulator-metal (MIM) capacitors using the 3-inch diameter wafer process. The uniformity of MIM capacitance and the dielectric breakdown voltage of the capacitor obtained within +/-2 % and over 100 V, respectively. The dark current of WGPDs was less than 3 nA at a reverse voltage of 1.6 V, owing to the InP passivation structure formed on WGPD surface. The fabricated integrated chip size was 2.0 mm × 5.1 mm. These results indicate that integrated WGPDs can provide both smaller and easier assembly for the compact coherent receiver.
我们已经展示了使用3英寸直径晶圆工艺的基于inp的波导光电二极管(wgpd)与金属-绝缘体-金属(MIM)电容器的单片集成。MIM电容的均匀性在+/- 2%以内，电容的介电击穿电压在100 V以上。由于在WGPD表面形成了InP钝化结构，在反向电压为1.6 V时，WGPD的暗电流小于3 nA。所制集成芯片尺寸为2.0 mm × 5.1 mm。这些结果表明，集成wgpd可以为紧凑型相干接收机提供更小、更容易的组装。
{"title":"Monolithic integration of InP-based waveguide photodiodes with MIM capacitors for compact coherent receiver","authors":"R. Masuyama, H. Yagi, N. Inoue, Y. Onishi, T. Katsuyama, T. Kikuchi, Y. Yoneda, H. Shoji","doi":"10.1109/ICIPRM.2013.6562573","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562573","url":null,"abstract":"We have demonstrated monolithic integration of InP-based waveguide photodiodes (WGPDs) with metal-insulator-metal (MIM) capacitors using the 3-inch diameter wafer process. The uniformity of MIM capacitance and the dielectric breakdown voltage of the capacitor obtained within +/-2 % and over 100 V, respectively. The dark current of WGPDs was less than 3 nA at a reverse voltage of 1.6 V, owing to the InP passivation structure formed on WGPD surface. The fabricated integrated chip size was 2.0 mm × 5.1 mm. These results indicate that integrated WGPDs can provide both smaller and easier assembly for the compact coherent receiver.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123258361","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-02-13DOI: 10.1109/ICIPRM.2013.6562620
N. Koyama, H. Kouketsu, S. Kawasaki, A. Takei, T. Taniguchi, Y. Matsushima, K. Utaka
We demonstrated the full-interport connection of a non-blocking 4x4 InAlGaAs/InAlAs Mach-Zehnder-type optical switch (MZ-OS) fabric. This switch fabric is consisted of six 2x2 MZ-OS elements in a cascading configuration, and it successfully operated with high-extinction ratios of about 20dB and polarization independence.
{"title":"Non-blocking 4×4 InAlGaAs/InAlAs Mach-Zehnder-type optical switch fabric","authors":"N. Koyama, H. Kouketsu, S. Kawasaki, A. Takei, T. Taniguchi, Y. Matsushima, K. Utaka","doi":"10.1109/ICIPRM.2013.6562620","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562620","url":null,"abstract":"We demonstrated the full-interport connection of a non-blocking 4x4 InAlGaAs/InAlAs Mach-Zehnder-type optical switch (MZ-OS) fabric. This switch fabric is consisted of six 2x2 MZ-OS elements in a cascading configuration, and it successfully operated with high-extinction ratios of about 20dB and polarization independence.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115424002","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-02-13DOI: 10.1109/ICIPRM.2013.6562586
R. Sato, M. Nakamura, H. Imai
We measured photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots structures. We examined the PL peak shift changing the polarization of excitation light from p-polarization to s-polarization and the excitation light power. From the results, we estimated that the phonon emission according to the increase in TM component of the p-polarization.
{"title":"Analysis of photoluminescent properties of InAs/InGaAsP/InP quantum dots structure","authors":"R. Sato, M. Nakamura, H. Imai","doi":"10.1109/ICIPRM.2013.6562586","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562586","url":null,"abstract":"We measured photoluminescence (PL) spectra of InAs/InGaAsP/InP quantum dots structures. We examined the PL peak shift changing the polarization of excitation light from p-polarization to s-polarization and the excitation light power. From the results, we estimated that the phonon emission according to the increase in TM component of the p-polarization.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131641280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-02-13DOI: 10.1109/ICIPRM.2013.6562603
R. Sogabe, K. Shizuno, H. Kanaya, S. Suzuki, M. Asada, H. Sugiyama, H. Yokoyama
We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680-770 GHz with the RTD areas of 1-1.5 square microns. Higher frequency will be possible by reducing the RTD area.
{"title":"Terahertz oscillators using resonant tunneling diodes with InAlGaAs/InP composite collector","authors":"R. Sogabe, K. Shizuno, H. Kanaya, S. Suzuki, M. Asada, H. Sugiyama, H. Yokoyama","doi":"10.1109/ICIPRM.2013.6562603","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562603","url":null,"abstract":"We proposed a resonant tunneling diode (RTD) with InAlGaAs/InP composite collector for reduction in transit delay caused by the gamma to L valley transition at the collector depletion region. Terahertz oscillators fabricated with this RTD show room-temperature fundamental oscillations of 680-770 GHz with the RTD areas of 1-1.5 square microns. Higher frequency will be possible by reducing the RTD area.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-02-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126483905","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2012-06-18DOI: 10.1109/DRC.2012.6256927
T. Otsuji, Takayuki Watanabe, S. Boubanga-Tombet, T. Suemitsu, D. Coquillat, W. Knap, D. Fateev, V. Popov
This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/√Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.
{"title":"Asymmetric dual-grating gate InGaAs/InAlAs/InP HEMTs for ultrafast and ultrahigh sensitive terahertz detection","authors":"T. Otsuji, Takayuki Watanabe, S. Boubanga-Tombet, T. Suemitsu, D. Coquillat, W. Knap, D. Fateev, V. Popov","doi":"10.1109/DRC.2012.6256927","DOIUrl":"https://doi.org/10.1109/DRC.2012.6256927","url":null,"abstract":"This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/√Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2012-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133207959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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