Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562613
W. Kobayashi, T. Fujisawa, Toshio Ito, T. Yamanaka, Y. Shibata, T. Tadokoro, H. Sanjoh
Recent results are reported for a 1.3-μm InGaAlAs directly modulated laser (DML) with a ridge waveguide structure. We realized a 3-dB-down electrical-to-optical (E/O) response of 34 GHz for a 150-μm DML. Clear eye openings were obtained at 43 Gb/s up to 60°C and at 50 Gb/s at 25°C.
{"title":"High-speed directly modulated laser for applications beyond 100GbE","authors":"W. Kobayashi, T. Fujisawa, Toshio Ito, T. Yamanaka, Y. Shibata, T. Tadokoro, H. Sanjoh","doi":"10.1109/ICIPRM.2013.6562613","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562613","url":null,"abstract":"Recent results are reported for a 1.3-μm InGaAlAs directly modulated laser (DML) with a ridge waveguide structure. We realized a 3-dB-down electrical-to-optical (E/O) response of 34 GHz for a 150-μm DML. Clear eye openings were obtained at 43 Gb/s up to 60°C and at 50 Gb/s at 25°C.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124382022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562562
P. Ye
Recently, III-V MOSFETs with high drain currents (Ids>1mA/μm) and high transconductances (gm>1mS/μm) have been achieved at sub-micron channel lengths (Lch), thanks to the better understanding and significant improvement in high-k/III-V interfaces. However, to realize a III-V FET at beyond 14nm technology node, one major challenge is how to effectively control the short channel effects (SCE). Due to the higher permittivity and lower bandgap of the channel materials, III-V MOSFETs are more susceptible to SCE than its Si counterpart. Therefore, the introduction of 3-dimensonal (3D) structures to the fabrication of deep sub-100nm III-V FETs is necessary. In this talk, we will review the materials and device aspects of III-V MOS technology developed very recently. We will also report some of new progress by demonstration of 20-80 nm channel length III-V gate-all-around nanowire MOSFETs with EOT=1.2nm and lowest SS=63 mV/dec. The total drain current per pitch can be further enhanced by introducing 4D structures.
{"title":"III–V MOS technology: From planar to 3D and 4D","authors":"P. Ye","doi":"10.1109/ICIPRM.2013.6562562","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562562","url":null,"abstract":"Recently, III-V MOSFETs with high drain currents (Ids>1mA/μm) and high transconductances (gm>1mS/μm) have been achieved at sub-micron channel lengths (Lch), thanks to the better understanding and significant improvement in high-k/III-V interfaces. However, to realize a III-V FET at beyond 14nm technology node, one major challenge is how to effectively control the short channel effects (SCE). Due to the higher permittivity and lower bandgap of the channel materials, III-V MOSFETs are more susceptible to SCE than its Si counterpart. Therefore, the introduction of 3-dimensonal (3D) structures to the fabrication of deep sub-100nm III-V FETs is necessary. In this talk, we will review the materials and device aspects of III-V MOS technology developed very recently. We will also report some of new progress by demonstration of 20-80 nm channel length III-V gate-all-around nanowire MOSFETs with EOT=1.2nm and lowest SS=63 mV/dec. The total drain current per pitch can be further enhanced by introducing 4D structures.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124436518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562580
S. Bruckner, O. Supplie, P. Kleinschmidt, A. Dobrich, H. Doscher, T. Hannappel
III-V films grown heteroepitaxially on Si(100) substrates by metal-organic chemical vapor deposition (MOCVD) are desired for the combination of optoelectronics with microelectronic devices. Difficulties regarding device quality are related to the formation of the crucial III-V/Si(100) interface, where single-layer steps on the substrate surface induce antiphase disorder in the epitaxial film. In principle, double-layer steps on the Si(100) substrate prevent the occurrence of antiphase disorder. While the preparation of silicon surfaces is well-established in UHV, preparation in H2 ambient differs considerably. Considered energetically least favorable on both the clean and the monohydride-terminated Si(100) surface, single domain surfaces with double layer steps in the unusual DA configuration were recently prepared in MOCVD ambient. The DA step formation on Si(100) with 2° offcut in CVD ambient is suggested to originate in vacancy generation and diffusion on the terraces accompanied by preferential annihilation at the step edges. Here, we investigate Si removal and vacancy formation on Si(100) substrates with large terraces under CVD preparation conditions. With in situ reflection anisotropy spectroscopy (RAS), we directly observe the domain formation in dependence of the preparation route. Oscillations in transient RA measurements indicate layer by layer Si removal during annealing in hydrogen. Based on scanning tunneling microscopy results, we conclude that vacancy island formation and anisotropic expansion preferentially in parallel to the dimer rows of the terraces explains the layer-by-layer Si removal process.
{"title":"Preparation of single-domain Si(100) surfaces with in situ control in CVD ambient","authors":"S. Bruckner, O. Supplie, P. Kleinschmidt, A. Dobrich, H. Doscher, T. Hannappel","doi":"10.1109/ICIPRM.2013.6562580","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562580","url":null,"abstract":"III-V films grown heteroepitaxially on Si(100) substrates by metal-organic chemical vapor deposition (MOCVD) are desired for the combination of optoelectronics with microelectronic devices. Difficulties regarding device quality are related to the formation of the crucial III-V/Si(100) interface, where single-layer steps on the substrate surface induce antiphase disorder in the epitaxial film. In principle, double-layer steps on the Si(100) substrate prevent the occurrence of antiphase disorder. While the preparation of silicon surfaces is well-established in UHV, preparation in H2 ambient differs considerably. Considered energetically least favorable on both the clean and the monohydride-terminated Si(100) surface, single domain surfaces with double layer steps in the unusual DA configuration were recently prepared in MOCVD ambient. The DA step formation on Si(100) with 2° offcut in CVD ambient is suggested to originate in vacancy generation and diffusion on the terraces accompanied by preferential annihilation at the step edges. Here, we investigate Si removal and vacancy formation on Si(100) substrates with large terraces under CVD preparation conditions. With in situ reflection anisotropy spectroscopy (RAS), we directly observe the domain formation in dependence of the preparation route. Oscillations in transient RA measurements indicate layer by layer Si removal during annealing in hydrogen. Based on scanning tunneling microscopy results, we conclude that vacancy island formation and anisotropic expansion preferentially in parallel to the dimer rows of the terraces explains the layer-by-layer Si removal process.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114312919","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562608
Jongwon Lee, Jooseok Lee, Jaehong Park, Kyounghoon Yang
A low dc power RTD microwave amplifier utilizing a hybrid-coupled reflection-type topology is presented. The low-power microwave amplifier, which consists of a quadrature hybrid coupler and two RTDs, is implemented using an InP-based MMIC technology. The fabricated RTD amplifier shows low dc power consumption of 470 W with high gain of 11.5 dB at 5 GHz, resulting in high FOM of 24.5 dB/mW. The amplifier IC is the first demonstration of a low-power microwave amplifier based on the RTD device technology.
{"title":"5 GHz low-power RTD-based amplifier MMIC with a high figure-of-merit of 24.5 dB/mW","authors":"Jongwon Lee, Jooseok Lee, Jaehong Park, Kyounghoon Yang","doi":"10.1109/ICIPRM.2013.6562608","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562608","url":null,"abstract":"A low dc power RTD microwave amplifier utilizing a hybrid-coupled reflection-type topology is presented. The low-power microwave amplifier, which consists of a quadrature hybrid coupler and two RTDs, is implemented using an InP-based MMIC technology. The fabricated RTD amplifier shows low dc power consumption of 470 W with high gain of 11.5 dB at 5 GHz, resulting in high FOM of 24.5 dB/mW. The amplifier IC is the first demonstration of a low-power microwave amplifier based on the RTD device technology.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114412094","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562566
U. W. Pohl, A. Strittmatter, J. Schulze, D. Quandt, T. Germann, W. Unrau, T. Heindel, O. Hitzemann, D. Bimberg, S. Reitzenstein
The buried oxide current-aperture in a pin diode-structure is used to create a strain field for the self-aligned nucleation of site-controlled single quantum dots. A single-photon source fabricated applying this approach shows spectrally very narrow emission lines (FWHM ≤ 25 μeV) and spectrally pure single-photon emission with a second-order autocorrelation g(2)(0) = 0.05.
{"title":"Self-aligned quantum-dot growth for single-photon sources","authors":"U. W. Pohl, A. Strittmatter, J. Schulze, D. Quandt, T. Germann, W. Unrau, T. Heindel, O. Hitzemann, D. Bimberg, S. Reitzenstein","doi":"10.1109/ICIPRM.2013.6562566","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562566","url":null,"abstract":"The buried oxide current-aperture in a pin diode-structure is used to create a strain field for the self-aligned nucleation of site-controlled single quantum dots. A single-photon source fabricated applying this approach shows spectrally very narrow emission lines (FWHM ≤ 25 μeV) and spectrally pure single-photon emission with a second-order autocorrelation g(2)(0) = 0.05.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114903459","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562624
M. Lamponi, M. Chtioui, F. Lelarge, G. Kervella, E. Rouvalis, C. Renaud, M. Fice, G. Carpintero, F. van Dijk
We demonstrate a fully integrated tunable continuous-wave (CW) millimeter wave heterodyne synthesizer. DFB lasers, SOA amplifiers, passive waveguides, beam combiners, high speed photodetectors have been integrated on the same InP-based platform. Millimeter wave generation up to 110 GHz has been demonstrated.
{"title":"Tunable InP photonic integrated circuit for millimeter wave generation","authors":"M. Lamponi, M. Chtioui, F. Lelarge, G. Kervella, E. Rouvalis, C. Renaud, M. Fice, G. Carpintero, F. van Dijk","doi":"10.1109/ICIPRM.2013.6562624","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562624","url":null,"abstract":"We demonstrate a fully integrated tunable continuous-wave (CW) millimeter wave heterodyne synthesizer. DFB lasers, SOA amplifiers, passive waveguides, beam combiners, high speed photodetectors have been integrated on the same InP-based platform. Millimeter wave generation up to 110 GHz has been demonstrated.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124258517","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562622
D. Dzibrou, J. V. D. van der Tol, M. Smit
This paper presents a new way to make trapezoidal polarization converters. The fabrication process has four steps, two steps less than the standard fabrication. The fabricated converters have a 97.9% polarization conversion and loss below 0.5 dB at a wavelength of 1.55 μm.
{"title":"New fabrication method of trapezoidal polarization converters for inp-based photonic integrated circuits","authors":"D. Dzibrou, J. V. D. van der Tol, M. Smit","doi":"10.1109/ICIPRM.2013.6562622","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562622","url":null,"abstract":"This paper presents a new way to make trapezoidal polarization converters. The fabrication process has four steps, two steps less than the standard fabrication. The fabricated converters have a 97.9% polarization conversion and loss below 0.5 dB at a wavelength of 1.55 μm.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121527779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562645
D. Wu, Jie Pan, Katsutaro Mizumaki, M. Mori, K. Maezawa
RTD pulse generators were designed and fabricated for improved power performance. 10-ps class pulse width with higher peak power was demonstrated for the circuit having an exponentially tapered transmission line impedance converter.
{"title":"Ultrashort pulse generators using resonant tunneling diodes with improved power performance","authors":"D. Wu, Jie Pan, Katsutaro Mizumaki, M. Mori, K. Maezawa","doi":"10.1109/ICIPRM.2013.6562645","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562645","url":null,"abstract":"RTD pulse generators were designed and fabricated for improved power performance. 10-ps class pulse width with higher peak power was demonstrated for the circuit having an exponentially tapered transmission line impedance converter.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122850025","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562607
V. Papageorgiou, A. Khalid, Chong Li, D. Cumming
This paper describes the simulation and fabrication of the first planar Gunn diode based on InGaAs on InP substrate. Gunn devices were simulated using the Sentaurus Device software. The fabricated planar Gunn diodes are 1.3 μm long and 120 micron wide and the measured and simulated results are in excellent agreement.
{"title":"Simulation and fabrication of InGaAs planar Gunn diode on InP substrate","authors":"V. Papageorgiou, A. Khalid, Chong Li, D. Cumming","doi":"10.1109/ICIPRM.2013.6562607","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562607","url":null,"abstract":"This paper describes the simulation and fabrication of the first planar Gunn diode based on InGaAs on InP substrate. Gunn devices were simulated using the Sentaurus Device software. The fabricated planar Gunn diodes are 1.3 μm long and 120 micron wide and the measured and simulated results are in excellent agreement.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124679581","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562633
M. Yokoyama, Y. Asakura, H. Yokoyama, M. Takenaka, S. Takagi
We have investigated the impact of the Al2O3 atomiclayer-deposition (ALD) temperature on Al2O3/GaSb metal-oxidesemiconductor (MOS) interface properties. We have found that the GaSb MOS interfaces are severely degraded with increasing the ALD temperature. X-ray photoelectron spectroscopy (XPS) measurements clarified that the main cause of the interface deterioration is the reduction of Sb oxides from GaSb surfaces.
{"title":"Impact of Al2O3 ALD temperature on Al2O3/GaSb metal-oxide-semiconductor interface properties","authors":"M. Yokoyama, Y. Asakura, H. Yokoyama, M. Takenaka, S. Takagi","doi":"10.1109/ICIPRM.2013.6562633","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562633","url":null,"abstract":"We have investigated the impact of the Al2O3 atomiclayer-deposition (ALD) temperature on Al2O3/GaSb metal-oxidesemiconductor (MOS) interface properties. We have found that the GaSb MOS interfaces are severely degraded with increasing the ALD temperature. X-ray photoelectron spectroscopy (XPS) measurements clarified that the main cause of the interface deterioration is the reduction of Sb oxides from GaSb surfaces.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126680690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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