Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562626
C. Kazmierski, N. Chimot, F. Blache, J. Decobert, F. Alexandre, J. Honecker, C. Leonhardt, A. Steffan, O. Bertran-Pardo, H. Mardoyan, J. Renaudier, G. Charlet
A novel monolithic QPSK-ready transmitter source based on prefixed phase switching by fast EAMs has been realized on InP using a flexible photonic integrating circuit technology. It has been used up to 56Gb/s in DPSK coherent transmission experiments.
{"title":"56Gb/s PDM-BPSK experiment with a novel InP-monolithic source based on prefixed optical phase switching","authors":"C. Kazmierski, N. Chimot, F. Blache, J. Decobert, F. Alexandre, J. Honecker, C. Leonhardt, A. Steffan, O. Bertran-Pardo, H. Mardoyan, J. Renaudier, G. Charlet","doi":"10.1109/ICIPRM.2013.6562626","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562626","url":null,"abstract":"A novel monolithic QPSK-ready transmitter source based on prefixed phase switching by fast EAMs has been realized on InP using a flexible photonic integrating circuit technology. It has been used up to 56Gb/s in DPSK coherent transmission experiments.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125157576","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562638
S. Joshi, N. Chimot, R. Rosales, S. Barbet, A. Accard, A. Ramdane, F. Lelarge
In this paper we present the first demonstration of a InAs/InP Quantum Dash based mode Locked Laser (MLL) compatible with uncooled operation. For integration purpose, we designed a Distributed Bragg Reflector (DBR) mirror in order to close the cavity without disturbing the mode-locking efficiency. As a demonstration of integration, we fabricated such DBR monolithically integrated with a semiconductor optical amplifier. This opens the way to the integration e.g. of frequency comb generators in photonic integrated circuits.
{"title":"Mode locked InAs/InP Quantum dash based DBR Laser monolithically integrated with a semiconductor optical amplifier","authors":"S. Joshi, N. Chimot, R. Rosales, S. Barbet, A. Accard, A. Ramdane, F. Lelarge","doi":"10.1109/ICIPRM.2013.6562638","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562638","url":null,"abstract":"In this paper we present the first demonstration of a InAs/InP Quantum Dash based mode Locked Laser (MLL) compatible with uncooled operation. For integration purpose, we designed a Distributed Bragg Reflector (DBR) mirror in order to close the cavity without disturbing the mode-locking efficiency. As a demonstration of integration, we fabricated such DBR monolithically integrated with a semiconductor optical amplifier. This opens the way to the integration e.g. of frequency comb generators in photonic integrated circuits.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121782253","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562598
H. Inada, K. Miura, Y. Iguchi, Y. Kawamura, J. Murooka, H. Katayama, S. Kanno, T. Takekawa, M. Kimata
Infrared photodetectors with InAs/GaSb type-II quantum wells on InP substrate was fabricated and evaluated. Dark current density was 0.1mA/cm2 at 112K. Quantum efficiency at 5μm was 10%. This results show that InAs/GaSb quantum wells on InP substrate has potential for infrared image sensor.
{"title":"Mid-infrared photodetectors with InAs/GaSb type-II quantum wells grown on InP substrate","authors":"H. Inada, K. Miura, Y. Iguchi, Y. Kawamura, J. Murooka, H. Katayama, S. Kanno, T. Takekawa, M. Kimata","doi":"10.1109/ICIPRM.2013.6562598","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562598","url":null,"abstract":"Infrared photodetectors with InAs/GaSb type-II quantum wells on InP substrate was fabricated and evaluated. Dark current density was 0.1mA/cm2 at 112K. Quantum efficiency at 5μm was 10%. This results show that InAs/GaSb quantum wells on InP substrate has potential for infrared image sensor.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122781271","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562635
B. Mason, M. Larson, Y. Akulova, S. Kalluri
We review and discuss several new advances in InP based photonic integrated circuits and their application to 100Gb/s coherent transmission applications.
本文综述和讨论了基于InP的光子集成电路及其在100Gb/s相干传输中的应用的最新进展。
{"title":"InP based photonic integrated circuits for DWDM optical communication","authors":"B. Mason, M. Larson, Y. Akulova, S. Kalluri","doi":"10.1109/ICIPRM.2013.6562635","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562635","url":null,"abstract":"We review and discuss several new advances in InP based photonic integrated circuits and their application to 100Gb/s coherent transmission applications.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123173716","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562650
N. Kashio, K. Kurishima, M. Ida, H. Matsuzaki
This paper describes 0.25-μm-emitter InP/InGaAs DHBT technology that uses SiN/SiO2 sidewall spacers. The technology enables the fabrication of HBTs with a passivation ledge (0.10-μm width) and narrow base metal (<; 0.25 μm). The fabricated HBT exhibits a high current gain of over 50 and an ft of 491 GHz at a collector current density of 18 mA/μm2.
{"title":"InP/InGaAs DHBT technology using SiN/SiO2 sidewall spacers","authors":"N. Kashio, K. Kurishima, M. Ida, H. Matsuzaki","doi":"10.1109/ICIPRM.2013.6562650","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562650","url":null,"abstract":"This paper describes 0.25-μm-emitter InP/InGaAs DHBT technology that uses SiN/SiO<sup>2</sup> sidewall spacers. The technology enables the fabrication of HBTs with a passivation ledge (0.10-μm width) and narrow base metal (<; 0.25 μm). The fabricated HBT exhibits a high current gain of over 50 and an ft of 491 GHz at a collector current density of 18 mA/μm<sup>2</sup>.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116564505","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562641
G. Keller, A. Tchegho, B. Munstermann, W. Prost, F. Tegude, M. Suhara
InP-based resonant tunneling diodes with symmetrical I/V-characteristics have shown their excellent high frequency performance for THz signal generation. For signal detection we present a device with an additional third barrier to create an unsymmetrical I/V-characteristic. Sensitivity measurements are performed and further improvements by scaling of the active device area are discussed. To allow SPICE based circuit simulation an approach for a large signal model is presented.
{"title":"Characterization and modeling of zero bias rf-detection diodes based on triple barrier resonant tunneling structures","authors":"G. Keller, A. Tchegho, B. Munstermann, W. Prost, F. Tegude, M. Suhara","doi":"10.1109/ICIPRM.2013.6562641","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562641","url":null,"abstract":"InP-based resonant tunneling diodes with symmetrical I/V-characteristics have shown their excellent high frequency performance for THz signal generation. For signal detection we present a device with an additional third barrier to create an unsymmetrical I/V-characteristic. Sensitivity measurements are performed and further improvements by scaling of the active device area are discussed. To allow SPICE based circuit simulation an approach for a large signal model is presented.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132364367","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562596
Q. Meng, C. Liu, H. Wang, K. Ang, K. Manoj, T. Guo, B. Gao
A uni-traveling-carrier photodetector (UTC-PD) with dipole-doped structure at the InGaAs/InP interface has been designed, fabricated and characterized. The device transit time delay and RC time delay was extracted using an equivalent circuit model. A transit time delay time less than 4.5 ps was obtained with a junction reverse bias lager than 4 V. The results suggest that the current-blocking at InGaAs/InP interface can be effectively suppressed by the dipole-doped interface.
{"title":"Analysis of uni-traveling-carrier photodetectors (UTC-PDs) with dipole-doped interface","authors":"Q. Meng, C. Liu, H. Wang, K. Ang, K. Manoj, T. Guo, B. Gao","doi":"10.1109/ICIPRM.2013.6562596","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562596","url":null,"abstract":"A uni-traveling-carrier photodetector (UTC-PD) with dipole-doped structure at the InGaAs/InP interface has been designed, fabricated and characterized. The device transit time delay and RC time delay was extracted using an equivalent circuit model. A transit time delay time less than 4.5 ps was obtained with a junction reverse bias lager than 4 V. The results suggest that the current-blocking at InGaAs/InP interface can be effectively suppressed by the dipole-doped interface.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133140769","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562648
H. Matsumura, S. Shiba, Masaru Sato, Tsuyoshi Takahashi
In this paper, we present the development of J-band amplifier in 75-nm InP HEMT technology. The circuit utilizes a six-stage common-source amplifier. An inverted microstrip line (IMSL) structure is employed for matching networks of the amplifier. The developed amplifier realizes a small signal gain of 17.3 dB and a 3-dB band width of 35 GHz from 254 GHz to 289 GHz.
{"title":"250–290 GHz amplifier in 75-nm InP HEMT technology using inverted microstrip transmission line","authors":"H. Matsumura, S. Shiba, Masaru Sato, Tsuyoshi Takahashi","doi":"10.1109/ICIPRM.2013.6562648","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562648","url":null,"abstract":"In this paper, we present the development of J-band amplifier in 75-nm InP HEMT technology. The circuit utilizes a six-stage common-source amplifier. An inverted microstrip line (IMSL) structure is employed for matching networks of the amplifier. The developed amplifier realizes a small signal gain of 17.3 dB and a 3-dB band width of 35 GHz from 254 GHz to 289 GHz.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125025561","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562614
M. Matsuda, A. Uetake, T. Simoyama, S. Okumura, K. Takabayashi, M. Ekawa, Tsuyoshi Yamamoto
40-Gbps direct modulation of 1.3-μm wavelength AlGaInAs distributed-reflector laser arrays on semi-insulating InP substrate are investigated. Clear eye-opening is demonstrated under simultaneous operation of two lasers.
{"title":"Simultaneous 40-Gbps direct modulation of 1.3-µm wavelength AlGaInAs distributed-reflector laser arrays on semi-insulating InP substrate","authors":"M. Matsuda, A. Uetake, T. Simoyama, S. Okumura, K. Takabayashi, M. Ekawa, Tsuyoshi Yamamoto","doi":"10.1109/ICIPRM.2013.6562614","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562614","url":null,"abstract":"40-Gbps direct modulation of 1.3-μm wavelength AlGaInAs distributed-reflector laser arrays on semi-insulating InP substrate are investigated. Clear eye-opening is demonstrated under simultaneous operation of two lasers.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128828445","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562585
M. Yamauchi, Y. Iwane, S. Yoshikawa, Yuta Yamamoto, K. Shimomura
We have obtained the wide energy level control of InAs QDs structure where the PL peak wavelength were ranged from 1200nm to 1800nm. Stranski-Krastanov InAs QDs were grown by low pressure all metal-organic source MOVPE. We have controlled the InAs QDs energy level by changing the buffer layer composition under the QDs and the height using double-capping procedure and also supply amount of QDs.
{"title":"Wide energy level control of InAs QDs using doublecapping procedure by MOVPE","authors":"M. Yamauchi, Y. Iwane, S. Yoshikawa, Yuta Yamamoto, K. Shimomura","doi":"10.1109/ICIPRM.2013.6562585","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562585","url":null,"abstract":"We have obtained the wide energy level control of InAs QDs structure where the PL peak wavelength were ranged from 1200nm to 1800nm. Stranski-Krastanov InAs QDs were grown by low pressure all metal-organic source MOVPE. We have controlled the InAs QDs energy level by changing the buffer layer composition under the QDs and the height using double-capping procedure and also supply amount of QDs.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126299497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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