Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562646
S. Sarkozy, X. Mei, W. Yoshida, Po-Hsin Liu, L. Lee, Joe X. Zhou, K. Leong, V. Radisic, W. Deal, R. Lai
This paper reports on the process and technology of the sub-50nm InP HEMT MMIC process which has enabled signal amplification up to 670 GHz. In particular, considerations not commonly addressed such as the related processing requirements and uniformity of transistors to establish working chipsets are discussed. Finally, initial burn in data is presented as the technology evolves from a research and development process to production.
{"title":"Sub-50nm indium phosphide high electron mobility transistor technology for terahertz monolithic microwave integrated circuits and systems","authors":"S. Sarkozy, X. Mei, W. Yoshida, Po-Hsin Liu, L. Lee, Joe X. Zhou, K. Leong, V. Radisic, W. Deal, R. Lai","doi":"10.1109/ICIPRM.2013.6562646","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562646","url":null,"abstract":"This paper reports on the process and technology of the sub-50nm InP HEMT MMIC process which has enabled signal amplification up to 670 GHz. In particular, considerations not commonly addressed such as the related processing requirements and uniformity of transistors to establish working chipsets are discussed. Finally, initial burn in data is presented as the technology evolves from a research and development process to production.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125384497","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562568
K. Prosyk, A. Ait-Ouali, Junfu Chen, M. Hamacher, D. Hoffmann, R. Kaiser, R. Millett, A. Pirastu, M. Totolo, K. Velthaus, I. Woods
Travelling wave electrode Mach-Zehnder modulators in InP/InGaAsP are investigated for application to advanced digital optical fibre formats. Single-end 50-Ohm and novel differential 100-Ohm designs are described.
{"title":"Travelling wave Mach-Zehnder modulators","authors":"K. Prosyk, A. Ait-Ouali, Junfu Chen, M. Hamacher, D. Hoffmann, R. Kaiser, R. Millett, A. Pirastu, M. Totolo, K. Velthaus, I. Woods","doi":"10.1109/ICIPRM.2013.6562568","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562568","url":null,"abstract":"Travelling wave electrode Mach-Zehnder modulators in InP/InGaAsP are investigated for application to advanced digital optical fibre formats. Single-end 50-Ohm and novel differential 100-Ohm designs are described.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122442004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562649
Y. Nagai, Shohei Nagai, J. Sato, S. Hara, H. Fujishiro, A. Endoh, I. Watanabe, A. Kasamatsu
The frequency limits in intrinsic fT of the nano-scale HEMTs with various channel materials are investigated by using the quantum-corrected Monte Carlo simulation. The device C with the InSb channel exhibits the higher intrinsic fT from the lower Vds because of the higher electron velocity. Owing to the shorter limit in the Lg scaling at the lower Vds, the device C also exhibits the higher frequency limit in the intrinsic fT, indicating its potential for the low power and THz operation.
{"title":"Comparative study on frequency limits of nanoscale HEMTs with various channel materials","authors":"Y. Nagai, Shohei Nagai, J. Sato, S. Hara, H. Fujishiro, A. Endoh, I. Watanabe, A. Kasamatsu","doi":"10.1109/ICIPRM.2013.6562649","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562649","url":null,"abstract":"The frequency limits in intrinsic fT of the nano-scale HEMTs with various channel materials are investigated by using the quantum-corrected Monte Carlo simulation. The device C with the InSb channel exhibits the higher intrinsic f<sub>T</sub> from the lower V<sub>ds</sub> because of the higher electron velocity. Owing to the shorter limit in the L<sub>g</sub> scaling at the lower V<sub>ds</sub>, the device C also exhibits the higher frequency limit in the intrinsic f<sub>T</sub>, indicating its potential for the low power and THz operation.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122597909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562627
Y. Ueda, T. Fujisawa, K. Takahata, M. Kohtoku, H. Takahashi, H. Ishii
We developed a reflection-type 4x1 transversal filter (TF) on an InP substrate as a compact and low-loss wavelength multiplexer (MUX) for monolithically integrated light source arrays. The filter has a satisfactory MUX function and is very compact of about 900 Pm x 50 Pm which is one twentieth of a size of a conventional 4x1 TF. It is suitable for a MUX of a monolithically integrated light source array thanks to its compactness and input/output-port arrangement.
我们在InP衬底上开发了一种反射型4x1横向滤波器(TF)，作为单片集成光源阵列的紧凑低损耗波长多路复用器(MUX)。该滤波器具有令人满意的MUX功能，并且非常紧凑，约为900 Pm x 50 Pm，是传统4x1 TF尺寸的二十分之一。由于其紧凑性和输入/输出端口的安排，它适用于单片集成光源阵列的MUX。
{"title":"InP-based compact reflection-type transversal filter","authors":"Y. Ueda, T. Fujisawa, K. Takahata, M. Kohtoku, H. Takahashi, H. Ishii","doi":"10.1109/ICIPRM.2013.6562627","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562627","url":null,"abstract":"We developed a reflection-type 4x1 transversal filter (TF) on an InP substrate as a compact and low-loss wavelength multiplexer (MUX) for monolithically integrated light source arrays. The filter has a satisfactory MUX function and is very compact of about 900 Pm x 50 Pm which is one twentieth of a size of a conventional 4x1 TF. It is suitable for a MUX of a monolithically integrated light source array thanks to its compactness and input/output-port arrangement.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116678112","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562640
Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, N. Hara
A high curvature coefficient (γ) of 49.4 V-1 was achieved at zero bias using p-GaAsSb/i-InAlAs/n-InGaAs backward diodes that were lattice-matched to an InP substrate. γ indicates a higher value than that of ideal Schottky diodes (39.6 V-1). Backward diodes with such a high y are applicable in mixers. The doping concentration in the p-GaAsSb layer was optimized to obtain an ideal energy band structure for a backward diode. The impedance-matched voltage sensitivity (βv,opt) at 94 GHz was estimated to be 6,069 V/W using a diode of 3.0 μm diameter.
{"title":"Improvement in nonlinear characteristics of zero bias GaAsSb-based backward diodes","authors":"Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, N. Hara","doi":"10.1109/ICIPRM.2013.6562640","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562640","url":null,"abstract":"A high curvature coefficient (γ) of 49.4 V-1 was achieved at zero bias using p-GaAsSb/i-InAlAs/n-InGaAs backward diodes that were lattice-matched to an InP substrate. γ indicates a higher value than that of ideal Schottky diodes (39.6 V-1). Backward diodes with such a high y are applicable in mixers. The doping concentration in the p-GaAsSb layer was optimized to obtain an ideal energy band structure for a backward diode. The impedance-matched voltage sensitivity (βv,opt) at 94 GHz was estimated to be 6,069 V/W using a diode of 3.0 μm diameter.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127737690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562599
A. Westlund, G. Moschetti, P. Nilsson, J. Grahn, L. Desplanque, X. Wallart
DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zerobias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.
{"title":"Cryogenic DC characterization of InAs/Al80Ga20Sb self-switching diodes","authors":"A. Westlund, G. Moschetti, P. Nilsson, J. Grahn, L. Desplanque, X. Wallart","doi":"10.1109/ICIPRM.2013.6562599","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562599","url":null,"abstract":"DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zerobias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128845793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562583
S. Seifert, R. Ravash, D. Franke, F. Wenning, D. Zengler, F. Kießling
Optimized extended-InGaAs photodetectors were grown on InP substrate using metamorphic buffer layers to achieve a strain relaxation. The samples were investigated by transmission electron microscopy and X-Ray diffraction. The results show that a number of metamorphic buffer layers and their thickness play an important role in material quality and photodetectors performance.
{"title":"Optimization of metamorphic buffer layers for extended-InGaAs/InP photodetectors","authors":"S. Seifert, R. Ravash, D. Franke, F. Wenning, D. Zengler, F. Kießling","doi":"10.1109/ICIPRM.2013.6562583","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562583","url":null,"abstract":"Optimized extended-InGaAs photodetectors were grown on InP substrate using metamorphic buffer layers to achieve a strain relaxation. The samples were investigated by transmission electron microscopy and X-Ray diffraction. The results show that a number of metamorphic buffer layers and their thickness play an important role in material quality and photodetectors performance.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115365897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562597
O. Parillaud, G. de Naurois, B. Simozrag, V. Trinité, G. Maisons, M. Garcia, B. Gérard, M. Carras, W. Metaferia, C. Junesand, H. Kataria, Y. Sun, S. Lourdudoss
We report on the realization of buried single ridge and μ-stripes quantum cascade lasers using HVPE and MOVPE regrowth steps of semi-insulating InP:Fe and Si doped layers. We present here the preliminary results obtained on these devices. The reduction of the thermal resistance achieved using semiinsulating InP:Fe for regrowth planarization and μ-stripe arrays approaches are shown and performance perspectives are addressed.
{"title":"Multi-regrowth steps for the realization of buried single ridge and μ-stripes quantum cascade lasers","authors":"O. Parillaud, G. de Naurois, B. Simozrag, V. Trinité, G. Maisons, M. Garcia, B. Gérard, M. Carras, W. Metaferia, C. Junesand, H. Kataria, Y. Sun, S. Lourdudoss","doi":"10.1109/ICIPRM.2013.6562597","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562597","url":null,"abstract":"We report on the realization of buried single ridge and μ-stripes quantum cascade lasers using HVPE and MOVPE regrowth steps of semi-insulating InP:Fe and Si doped layers. We present here the preliminary results obtained on these devices. The reduction of the thermal resistance achieved using semiinsulating InP:Fe for regrowth planarization and μ-stripe arrays approaches are shown and performance perspectives are addressed.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114297643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562565
S. Assali, I. Zardo, S. Plissard, M. Verheijen, J. Haverkort, E. Bakkers
Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.
{"title":"Wurtzite Gallium Phosphide has a direct-band gap","authors":"S. Assali, I. Zardo, S. Plissard, M. Verheijen, J. Haverkort, E. Bakkers","doi":"10.1109/ICIPRM.2013.6562565","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562565","url":null,"abstract":"Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126922010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562602
P. Nilsson, H. Rodilla, J. Rodilla, N. Wadefalk, J. Grahn
The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 μA/mm to 7 μA/mm at -1V gate bias.
{"title":"Influence of gate-channel distance in low-noise InP HEMTs","authors":"P. Nilsson, H. Rodilla, J. Rodilla, N. Wadefalk, J. Grahn","doi":"10.1109/ICIPRM.2013.6562602","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562602","url":null,"abstract":"The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 μA/mm to 7 μA/mm at -1V gate bias.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127475734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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