Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562567
X. Liu, N. Kobayashi, K. Akahane, M. Sasaki, H. Kumano, I. Suemune
We report on the experimental demonstration of single-photon source based on a single InAs quantum dot emitting in the telecommunication band. The low-density quantum dots grown by epitaxial method are embedded in an asetched pillar structure. Photoluminescence spectrum of a single InAs quantum dot exhibits intense and narrow emission lines. Photon antibunching behavior is clearly observed using superconducting single-photon detectors with high sensitivity, which indicates the single-photon emission.
{"title":"Single-photon emission in telecommunication band from an InAs quantum dot in a pillar structure","authors":"X. Liu, N. Kobayashi, K. Akahane, M. Sasaki, H. Kumano, I. Suemune","doi":"10.1109/ICIPRM.2013.6562567","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562567","url":null,"abstract":"We report on the experimental demonstration of single-photon source based on a single InAs quantum dot emitting in the telecommunication band. The low-density quantum dots grown by epitaxial method are embedded in an asetched pillar structure. Photoluminescence spectrum of a single InAs quantum dot exhibits intense and narrow emission lines. Photon antibunching behavior is clearly observed using superconducting single-photon detectors with high sensitivity, which indicates the single-photon emission.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"133 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115930173","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562576
Y. Shimogaki, M. Sugiyama, Y. Nakano
Numerical simulation on growth rate non-uniformity of selective area growth (SAG) in metal-organic vapor phase epitaxy (MOVPE) is an effective method to examine the surface reaction kinetics, which is normally hindered by mass transport rate of precursors. SAG is also an effective tool to fabricate opto-electronic integrated circuits (OEICs) to reduce the process steps. In the present talk, the kinetic analyses on InGaAsP and InGaN MOVPE processes using SAG will be presented.
{"title":"Selective area MOVPE of InGaAsP and InGaN systems as process analytical and design tools for OEICs","authors":"Y. Shimogaki, M. Sugiyama, Y. Nakano","doi":"10.1109/ICIPRM.2013.6562576","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562576","url":null,"abstract":"Numerical simulation on growth rate non-uniformity of selective area growth (SAG) in metal-organic vapor phase epitaxy (MOVPE) is an effective method to examine the surface reaction kinetics, which is normally hindered by mass transport rate of precursors. SAG is also an effective tool to fabricate opto-electronic integrated circuits (OEICs) to reduce the process steps. In the present talk, the kinetic analyses on InGaAsP and InGaN MOVPE processes using SAG will be presented.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123678649","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562568
K. Prosyk, A. Ait-Ouali, Junfu Chen, M. Hamacher, D. Hoffmann, R. Kaiser, R. Millett, A. Pirastu, M. Totolo, K. Velthaus, I. Woods
Travelling wave electrode Mach-Zehnder modulators in InP/InGaAsP are investigated for application to advanced digital optical fibre formats. Single-end 50-Ohm and novel differential 100-Ohm designs are described.
{"title":"Travelling wave Mach-Zehnder modulators","authors":"K. Prosyk, A. Ait-Ouali, Junfu Chen, M. Hamacher, D. Hoffmann, R. Kaiser, R. Millett, A. Pirastu, M. Totolo, K. Velthaus, I. Woods","doi":"10.1109/ICIPRM.2013.6562568","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562568","url":null,"abstract":"Travelling wave electrode Mach-Zehnder modulators in InP/InGaAsP are investigated for application to advanced digital optical fibre formats. Single-end 50-Ohm and novel differential 100-Ohm designs are described.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122442004","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562649
Y. Nagai, Shohei Nagai, J. Sato, S. Hara, H. Fujishiro, A. Endoh, I. Watanabe, A. Kasamatsu
The frequency limits in intrinsic fT of the nano-scale HEMTs with various channel materials are investigated by using the quantum-corrected Monte Carlo simulation. The device C with the InSb channel exhibits the higher intrinsic fT from the lower Vds because of the higher electron velocity. Owing to the shorter limit in the Lg scaling at the lower Vds, the device C also exhibits the higher frequency limit in the intrinsic fT, indicating its potential for the low power and THz operation.
{"title":"Comparative study on frequency limits of nanoscale HEMTs with various channel materials","authors":"Y. Nagai, Shohei Nagai, J. Sato, S. Hara, H. Fujishiro, A. Endoh, I. Watanabe, A. Kasamatsu","doi":"10.1109/ICIPRM.2013.6562649","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562649","url":null,"abstract":"The frequency limits in intrinsic fT of the nano-scale HEMTs with various channel materials are investigated by using the quantum-corrected Monte Carlo simulation. The device C with the InSb channel exhibits the higher intrinsic f<sub>T</sub> from the lower V<sub>ds</sub> because of the higher electron velocity. Owing to the shorter limit in the L<sub>g</sub> scaling at the lower V<sub>ds</sub>, the device C also exhibits the higher frequency limit in the intrinsic f<sub>T</sub>, indicating its potential for the low power and THz operation.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"197 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122597909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562640
Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, N. Hara
A high curvature coefficient (γ) of 49.4 V-1 was achieved at zero bias using p-GaAsSb/i-InAlAs/n-InGaAs backward diodes that were lattice-matched to an InP substrate. γ indicates a higher value than that of ideal Schottky diodes (39.6 V-1). Backward diodes with such a high y are applicable in mixers. The doping concentration in the p-GaAsSb layer was optimized to obtain an ideal energy band structure for a backward diode. The impedance-matched voltage sensitivity (βv,opt) at 94 GHz was estimated to be 6,069 V/W using a diode of 3.0 μm diameter.
{"title":"Improvement in nonlinear characteristics of zero bias GaAsSb-based backward diodes","authors":"Tsuyoshi Takahashi, Masaru Sato, Y. Nakasha, N. Hara","doi":"10.1109/ICIPRM.2013.6562640","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562640","url":null,"abstract":"A high curvature coefficient (γ) of 49.4 V-1 was achieved at zero bias using p-GaAsSb/i-InAlAs/n-InGaAs backward diodes that were lattice-matched to an InP substrate. γ indicates a higher value than that of ideal Schottky diodes (39.6 V-1). Backward diodes with such a high y are applicable in mixers. The doping concentration in the p-GaAsSb layer was optimized to obtain an ideal energy band structure for a backward diode. The impedance-matched voltage sensitivity (βv,opt) at 94 GHz was estimated to be 6,069 V/W using a diode of 3.0 μm diameter.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127737690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562599
A. Westlund, G. Moschetti, P. Nilsson, J. Grahn, L. Desplanque, X. Wallart
DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zerobias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.
{"title":"Cryogenic DC characterization of InAs/Al80Ga20Sb self-switching diodes","authors":"A. Westlund, G. Moschetti, P. Nilsson, J. Grahn, L. Desplanque, X. Wallart","doi":"10.1109/ICIPRM.2013.6562599","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562599","url":null,"abstract":"DC characterization of an InAs/Al80Ga20Sb self-switching diode for THz detection is presented at 300 K and 6 K. Compared to 300 K, an enhancement of the diode I-V nonlinearity and associated responsivity was observed under zerobias conditions at 6 K. The intrinsic responsivity was estimated to 490 V/W at 300 K and 4400 V/W at 6 K.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128845793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562583
S. Seifert, R. Ravash, D. Franke, F. Wenning, D. Zengler, F. Kießling
Optimized extended-InGaAs photodetectors were grown on InP substrate using metamorphic buffer layers to achieve a strain relaxation. The samples were investigated by transmission electron microscopy and X-Ray diffraction. The results show that a number of metamorphic buffer layers and their thickness play an important role in material quality and photodetectors performance.
{"title":"Optimization of metamorphic buffer layers for extended-InGaAs/InP photodetectors","authors":"S. Seifert, R. Ravash, D. Franke, F. Wenning, D. Zengler, F. Kießling","doi":"10.1109/ICIPRM.2013.6562583","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562583","url":null,"abstract":"Optimized extended-InGaAs photodetectors were grown on InP substrate using metamorphic buffer layers to achieve a strain relaxation. The samples were investigated by transmission electron microscopy and X-Ray diffraction. The results show that a number of metamorphic buffer layers and their thickness play an important role in material quality and photodetectors performance.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115365897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562597
O. Parillaud, G. de Naurois, B. Simozrag, V. Trinité, G. Maisons, M. Garcia, B. Gérard, M. Carras, W. Metaferia, C. Junesand, H. Kataria, Y. Sun, S. Lourdudoss
We report on the realization of buried single ridge and μ-stripes quantum cascade lasers using HVPE and MOVPE regrowth steps of semi-insulating InP:Fe and Si doped layers. We present here the preliminary results obtained on these devices. The reduction of the thermal resistance achieved using semiinsulating InP:Fe for regrowth planarization and μ-stripe arrays approaches are shown and performance perspectives are addressed.
{"title":"Multi-regrowth steps for the realization of buried single ridge and μ-stripes quantum cascade lasers","authors":"O. Parillaud, G. de Naurois, B. Simozrag, V. Trinité, G. Maisons, M. Garcia, B. Gérard, M. Carras, W. Metaferia, C. Junesand, H. Kataria, Y. Sun, S. Lourdudoss","doi":"10.1109/ICIPRM.2013.6562597","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562597","url":null,"abstract":"We report on the realization of buried single ridge and μ-stripes quantum cascade lasers using HVPE and MOVPE regrowth steps of semi-insulating InP:Fe and Si doped layers. We present here the preliminary results obtained on these devices. The reduction of the thermal resistance achieved using semiinsulating InP:Fe for regrowth planarization and μ-stripe arrays approaches are shown and performance perspectives are addressed.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114297643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562565
S. Assali, I. Zardo, S. Plissard, M. Verheijen, J. Haverkort, E. Bakkers
Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.
{"title":"Wurtzite Gallium Phosphide has a direct-band gap","authors":"S. Assali, I. Zardo, S. Plissard, M. Verheijen, J. Haverkort, E. Bakkers","doi":"10.1109/ICIPRM.2013.6562565","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562565","url":null,"abstract":"Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong photoluminescence at a wavelength of 594nm with short lifetime, typical for a direct band gap. Furthermore, by incorporation of aluminum or arsenic in the GaP nanowires, the emitted wavelength can be tuned across an important range of the visible light spectrum (555690nm). This approach of crystal structure engineering enables new pathways for tailoring materials properties enhancing functionality.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"58 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126922010","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2013-05-19DOI: 10.1109/ICIPRM.2013.6562602
P. Nilsson, H. Rodilla, J. Rodilla, N. Wadefalk, J. Grahn
The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 μA/mm to 7 μA/mm at -1V gate bias.
{"title":"Influence of gate-channel distance in low-noise InP HEMTs","authors":"P. Nilsson, H. Rodilla, J. Rodilla, N. Wadefalk, J. Grahn","doi":"10.1109/ICIPRM.2013.6562602","DOIUrl":"https://doi.org/10.1109/ICIPRM.2013.6562602","url":null,"abstract":"The effect on the electrical properties, relevant to noise, from the gate-channel distance (barrier layer thickness) in 130 nm gate-length InP HEMTs was investigated. An increased quality of pinch-off was seen in HEMTs with an 8 nm barrier layer thickness compared to an 11 nm barrier. For the 8 nm barrier material the gate leakage increased from 1 μA/mm to 7 μA/mm at -1V gate bias.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"2351 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127475734","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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