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Slow-light effect via Rayleigh anomaly in high contrast gratings 高对比度光栅中瑞利异常的慢光效应
Pub Date : 2016-03-15 DOI: 10.1117/12.2214041
Kyoung-Youm Kim, Xinyuan Chong, Alan X. Wang
We investigate slow light effect of subwavelength gratings via Rayleigh Anomaly on both infinite and finite size high index contrast gratings. Our results show that the local group velocity of the transmitted light can be significantly reduced due to the optical vortex, which can inspire a new mechanism to enhance light-matter interactions for optical sensing and photo detection. However, the slow light effect will diminish as the transmitted light propagates further away from the grating surface, and the slow-down factor decreases as the grating size shrinks.
我们利用瑞利异常研究了亚波长光栅在无限和有限尺寸高折射率对比度光栅上的慢光效应。我们的研究结果表明,由于光学涡旋的存在,透射光的局部群速度可以显著降低,这可以激发一种新的机制来增强光-物质相互作用,用于光学传感和光检测。然而,随着透射光从光栅表面传播到更远的地方,慢光效应会减弱,并且随着光栅尺寸的缩小,慢光因子也会减小。
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引用次数: 0
Mechanically flexible waveguide arrays for optical chip-to-chip coupling 用于光学片对片耦合的机械柔性波导阵列
Pub Date : 2016-03-15 DOI: 10.1117/12.2205227
T. Peters, M. Tichem
This paper reports on the progress related to a multichannel photonic alignment concept, which aims to achieve submicrometer alignment of the waveguides of two photonic integrated circuits (PICs). The concept consists of two steps: chip-to-chip positioning and fixing provide a coarse alignment after which waveguide-to-waveguide positioning and fixing result in a fine alignment. For the waveguide-to-waveguide alignment, mechanically flexible waveguides are used. Positioning of the waveguides is performed by integrated MEMS actuators. The flexible waveguides and the actuators are both integrated in one of the PICs. This paper reports on the fabrication and the mechanical characterization of the suspended waveguide structures. The flexible waveguide array is created in a PIC which is based on TriPleX technology, i.e. a silicon nitride (Si3N4) core encapsulated in a silicon dioxide (SiO2) cladding. The realized flexible waveguide structures consist of parallel cantilevered waveguide beams and a crossbar that connects the free ends of the waveguide beams. The fabrication of suspended structures consisting of a thick, i.e. 15 µm, TriPleX layer stack is challenged by the compressive mean stress in the SiO2. We have developed a fabrication method for the reliable release of flexible TriPleX structures, resulting in a 96% yield of cantilever beams. The realized suspended waveguide arrays have a natural out-of-plane deformation, which is studied using white light interferometry. Suspended waveguide beams reveal a downward slope at the base of the beams close to 0:5_. In addition to this slope, the beams have a concave upward profile. The constant curvature over the length of the waveguide beams is measured to range from 0:2 µm to 0:8 µm. The profiles measured over the length of the crossbars do not seem to follow a circular curvature. The variation in deflection within crossbars is measured to be smaller than 0:2 µm.
本文报道了一种多通道光子对准概念的研究进展,该概念旨在实现两个光子集成电路波导的亚微米对准。该概念包括两个步骤:芯片对芯片的定位和固定提供粗对准,然后波导对波导的定位和固定导致精细对准。对于波导与波导的对齐,使用机械柔性波导。波导的定位由集成的MEMS致动器执行。柔性波导和致动器都集成在一个pic中。本文报道了悬浮波导结构的制备及其力学特性。柔性波导阵列是在基于TriPleX技术的PIC中创建的,即氮化硅(Si3N4)核心封装在二氧化硅(SiO2)包层中。所实现的柔性波导结构由平行悬臂波导和连接波导自由端的横杆组成。由厚度为15µm的TriPleX层堆叠组成的悬浮结构的制造受到SiO2中的平均压应力的挑战。我们已经开发了一种制造方法,可以可靠地释放柔性TriPleX结构,从而使悬臂梁的产量达到96%。所实现的悬浮波导阵列具有自然的面外变形,利用白光干涉法对其进行了研究。悬浮波导光束在光束的底部呈现一个向下的斜率,接近0:5_。除了这个斜坡,梁有一个凹向上的轮廓。波导光束长度上的恒定曲率测量范围为0:2µm至0:8µm。测量横梁长度的轮廓似乎不遵循圆形曲率。横梁内挠度变化测量值小于0:2µm。
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引用次数: 9
Towards four-dimensional photonics 朝向四维光子学
Pub Date : 2016-03-15 DOI: 10.1117/12.2218539
H. Price, T. Ozawa, N. Goldman, O. Zilberberg, I. Carusotto
Recent advances in silicon ring-resonator arrays have stimulated the development of topological lattices for photons, with potential applications in integrated photonic devices. Taking inspiration from ultracold atoms, we propose how such arrays can be extended into an additional synthetic dimension by coupling together the different modes of each ring resonator.1 In this way, a 1D resonator chain can become an effective 2D system, while a 3D resonator array can be exploited as a 4D photonic lattice. As an example of the power of this approach, we discuss how to experimentally realise an optical analogue of the 4D quantum Hall effect for the first time. This opens up the way towards the exploration of higher-dimensional lattices in integrated photonics.
硅环谐振器阵列的最新进展刺激了光子拓扑晶格的发展,在集成光子器件中具有潜在的应用前景。从超冷原子中获得灵感,我们提出如何通过将每个环形谐振器的不同模式耦合在一起,将这种阵列扩展到一个额外的合成维度通过这种方式,一维谐振器链可以成为有效的二维系统,而三维谐振器阵列可以被利用为四维光子晶格。作为这种方法的一个例子,我们讨论了如何在实验上首次实现四维量子霍尔效应的光学模拟。这为探索集成光子学中的高维晶格开辟了道路。
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引用次数: 2
High temperature monitoring of an oxy-fuel fluidized bed combustor using femtosecond infrared laser written fiber Bragg gratings 利用飞秒红外激光写入光纤光栅对全氧流化床燃烧室进行高温监测
Pub Date : 2016-03-15 DOI: 10.1117/12.2209399
R. Walker, H. Ding, D. Coulas, D. Grobnic, P. Lu, S. Mihailov, M. Duchesne, R. Hughes, D. McCalden, Ryan Burchat, Robert Yandon
Femtosecond pulse duration infrared laser (fs-IR) written fiber Bragg gratings (FBGs), have demonstrated great potential for extreme environment sensing. Harsh environments are inherent to the advanced power plant technologies under development to reduce greenhouse gas emissions. The performance of new power systems are currently limited by the lack of sensors and controls capable of withstanding the high temperature, pressure and corrosive conditions present. This paper discusses fabrication and deployment of several fs-IR written FBG arrays, for monitoring the temperature distribution within a fluidized bed combustor. Results include: calibration data to ~ 1100 °C, discussion of deployment strategies, contrast with thermocouple data, and comments on reliability.
飞秒脉冲持续红外激光器(fs-IR)写入光纤布拉格光栅(fbg)在极端环境传感方面显示出巨大的潜力。为减少温室气体排放而开发的先进电厂技术所固有的恶劣环境。目前,由于缺乏能够承受高温、压力和腐蚀性条件的传感器和控制装置,新型电力系统的性能受到限制。本文讨论了几种用于监测流化床燃烧室温度分布的fs-IR写入FBG阵列的制作和部署。结果包括:校准数据至~ 1100°C,部署策略的讨论,与热电偶数据的对比,以及对可靠性的评论。
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引用次数: 11
SiN-assisted flip-chip adiabatic coupler between SiPh and Glass OPCBs SiPh与玻璃opcb之间的sinc辅助倒装绝热耦合器
Pub Date : 2016-03-15 DOI: 10.1117/12.2208878
G. Poulopoulos, C. Baskiotis, D. Kalavrouziotis, L. Brusberg, H. Schröder, D. Apostolopoulos, H. Avramopoulos
We demonstrate, for the first time to our knowledge, a SiN-assisted in-plane adiabatic coupler between SiPh and onboard glass waveguides. Our numerical study is founded on an actual graded index glass waveguide developed by Fraunhofer-IZM. The Silicon taper profile and the optimal length are extracted employing the supermode theory and the adiabatic theorem. Fabrication and assembly issues are investigated, resulting to an optimized coupler design that exhibits a theoretical Si-to-glass loss below 0.1dB over the entire C-band. The proposed solution can be realized utilizing standard passive flip-chip assembly equipment and is, therefore, cost-effective, easy to be fabricated, and well-suited for compact packaging.
据我们所知,我们首次展示了SiPh和板载玻璃波导之间的sin辅助平面内绝热耦合器。我们的数值研究是建立在一个实际的渐变折射率玻璃波导的基础上,由弗劳恩霍夫- izm开发。利用超模理论和绝热定理,得到了硅锥型和最佳长度。研究了制造和组装问题,优化了耦合器设计,在整个c波段内,硅对玻璃的理论损耗低于0.1dB。所提出的解决方案可以利用标准的无源倒装芯片组装设备来实现,因此具有成本效益,易于制造,并且非常适合紧凑封装。
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引用次数: 8
Near infrared plasmonic sensor based on Fano resonance 基于范诺共振的近红外等离子体传感器
Pub Date : 2016-03-15 DOI: 10.1117/12.2214216
S. M. Sherif, L. Shahada, D. Zografopoulos, R. Beccherelli, M. Swillam
We introduce a compact plasmonic resonator that is capable of generating a Fano resonance in the transmission spectrum. The Fano resonance is observed with its unique lineshape. The proposed design is simple, compact, easy to fabricate and can be easily developed for different applications. The device structure is made of a gold layer, a metalinsulator- metal waveguide, and a rectangular cavity. As an application to the proposed plasmonic resonator, we introduce a gas sensor which is operational at the near infrared spectral range. The sensor possesses a high sensitivity of 1500nm/RIU at the telecom wavelength 1.55μm. FDTD simulation tools were conducted for the optimization of the device structure and obtaining the results.
我们介绍了一种紧凑的等离子体谐振器,它能够在透射谱中产生法诺共振。法诺共振具有独特的线形。所提出的设计简单,紧凑,易于制造,并且可以很容易地开发用于不同的应用。该器件结构由金层、金属绝缘体-金属波导和矩形腔构成。作为所提出的等离子体谐振器的应用,我们介绍了一种工作在近红外光谱范围内的气体传感器。该传感器在电信波长1.55μm处具有1500nm/RIU的高灵敏度。利用时域有限差分仿真工具对器件结构进行了优化,得到了优化结果。
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引用次数: 3
Active tunable high contrast meta-structure Si waveguide 有源可调谐高对比度元结构硅波导
Pub Date : 2016-03-15 DOI: 10.1117/12.2216273
Lingjun Jiang, Stephen R. Anderson, H. Taleb, Z. Huang, Weimin Zhou
In this work, we have designed a novel Si based 1-dimensional high contrast meta-structure waveguide that has slow light effect as well as phase tunability using p-n junction. The goal is to use such waveguide to design active optical devices such as high frequency modulators and tunable filters for analog RF-photonics or data communication applications. The Si ridge waveguide has a pair of high contrast grating wings adhered to the waveguide core in the center. Grating bars at two sides of the waveguide are doped P and N-type respectively, while a p-n junction region is formed in the middle of the waveguide core. By applying a voltage to bias the p-n junction, one can sweep the free carriers to change the effective index of the waveguide as well as the dispersion property of the grating. This metastructure Si waveguide is ideal in the design of high frequency optical modulators since the slow light effect can reduce the modulator waveguide length, increase the modulation efficiency as well as compensate other nonlinearity factors of the modulator for analog applications.
在这项工作中,我们设计了一种新型的基于Si的一维高对比度元结构波导,该波导具有慢光效应以及使用p-n结的相位可调性。目标是使用这种波导来设计有源光学器件,如高频调制器和可调谐滤波器,用于模拟rf光子学或数据通信应用。硅脊波导具有一对高对比度的光栅翼,并粘附在波导核心的中心。波导两侧的光栅条分别掺杂P型和n型,在波导芯的中间形成P -n结区。通过对pn结施加偏置电压,可以扫描自由载流子,从而改变波导的有效折射率和光栅的色散特性。这种元结构硅波导是设计高频光调制器的理想材料,因为慢光效应可以减小调制器波导长度,提高调制效率,并补偿调制器在模拟应用中的其他非线性因素。
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引用次数: 2
High quality factor trapezoidal subwavelength grating waveguide micro-ring resonator 高品质因数梯形亚波长光栅波导微环谐振器
Pub Date : 2016-03-15 DOI: 10.1117/12.2213935
Z. Wang, Xiaochuan Xu, D. Fan, Yaguo Wang, Ray T. Chen
In recent decades, silicon photonics has attracted intensive research interest in optical communications due to its advantageous compact dimensions and high-volume manufacturability. Particularly, micro-ring resonators on silicon-oninsulator (SOI) platform have been widely exploited as a basic building block for a vast range of applications such as switches, modulators, and sensors. A majority of these applications involve light-matter interaction, which can be substantially enhanced by the high quality factor micro-ring resonators. However, conventional strip waveguide based micro-ring resonators suffer from the intrinsic dilemma in achieving high light confinement and strong light-matter interaction simultaneously. Subwavelength grating (SWG) waveguides, comprised of periodically interleaved high and low refractive index materials with a pitch less than one wavelength, have been demonstrated as a promising alternative. For SWG waveguides built on SOI wafers, the ratio of silicon and cladding materials can be engineered microscopically to achieve desired macroscopic properties. The control of these properties could potentially lead to significant performance improvements compared with conventional micro-ring resonators based photonic devices, such as filters and sensors. However, SWG waveguide based micro-ring resonators (SWGMRs) that have been demonstrated so far can only provide a moderate quality factor (~5600) with a large radius (e.g. 15 μm), which greatly jeopardize the wide spread research efforts in this area. In this paper, we propose to use trapezoidal silicon pillars to reduce the bend loss of SWGMRs to improve the quality factor. For the first time, we experimentally demonstrate the smallest SWGMR (the micro-ring radius equals to 5 μm) with an applicable quality factor as high as 11,500. This approach also can be applied to SWGMRs with larger radii for higher quality factors. We also experimentally demonstrated a 10 μm radius SWGMR that can provide a quality factor up to 45,000. Compared to SWGMRs built with conventional rectangular silicon pillars, the quality factors is increased by 4.6 times from a 5 μm radius SWGMR and 3 times from a 10 μm SWGMR radius, respectively.
近几十年来,硅光子学以其紧凑的尺寸和可大批量生产的优势在光通信领域引起了广泛的研究兴趣。特别是,硅绝缘体(SOI)平台上的微环谐振器已被广泛用作开关、调制器和传感器等广泛应用的基本构建块。这些应用大多涉及光-物质相互作用,这可以通过高质量因数微环谐振器大大增强。然而,传统的基于条形波导的微环谐振器在同时实现高光约束和强光-物质相互作用方面存在固有的困境。亚波长光栅(SWG)波导由高、低折射率材料周期性交错组成,其间距小于一个波长,已被证明是一种有前途的替代方案。对于建立在SOI晶圆上的SWG波导,可以在微观上设计硅和包层材料的比例,以获得所需的宏观性能。与传统的基于微环谐振器的光子器件(如滤波器和传感器)相比,这些特性的控制可能会导致显著的性能改进。然而,目前已经证明的基于SWG波导的微环谐振器(SWGMRs)只能提供中等质量因子(~5600)和大半径(例如15 μm),这极大地危及了该领域的广泛研究工作。在本文中,我们提出使用梯形硅柱来降低swgmr的弯曲损耗,以提高质量因子。我们首次通过实验证明了最小的SWGMR(微环半径为5 μm),其适用质量因子高达11,500。该方法也可以应用于具有较大半径的swgmr,以获得更高的质量因子。我们还通过实验证明了半径为10 μm的SWGMR可以提供高达45,000的质量因子。与传统矩形硅柱构建的SWGMR相比,半径为5 μm的SWGMR质量因子提高了4.6倍,半径为10 μm的SWGMR质量因子提高了3倍。
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引用次数: 0
Effect of varying capping composition and number of strain-coupled stacks on In0.5Ga0.5As quantum dot infrared photodetectors 不同封盖成分和应变耦合层数对In0.5Ga0.5As量子点红外探测器的影响
Pub Date : 2016-03-15 DOI: 10.1117/12.2209308
D. Panda, S. Shetty, A. Balgarkashi, H. Ghadi, N. Sehara, S. Chakrabarti
In this paper, we have reported the optical and electrical properties of strain coupled multi-stack quantum dot infrared photodetectors (QDIPs) of In0.5Ga0.5As dots with different capping compositions. Bilayer, trilayer, pentalayer and heptalayer coupled QDIPs are grown by solid source molecular beam epitaxy with one set of samples containing conventional GaAs capping (12nm) and second set containing a combinational capping of In0.15Ga0.85As (3nm) and GaAs (9nm) layers with same total thickness. The entire set of strain coupled quantum dots (QDs) shows a red shift in ground state photoluminescence peak in comparison to the uncoupled structures. Due to the reduction in indium interdiffusion from In0.5Ga0.5As dots in the combinational capped structures, a higher redshift is observed compared to the GaAs capped structures, which attributes larger dot size in the former ones. Full width half maximum value (FWHM) of In0.15Ga0.85As/GaAs capped QDs are lower, showing uniform distribution of dot size compared to the corresponding GaAs capped QDs. Trilayer sample with In0.15Ga0.85As/GaAs capping shows the best result in terms of the peak emission wavelength of 1177nm, FWHM of 15.67nm and activation energy of 339meV compared to all the structures. Trilayer sample seems to be the optimum stacking having the best confinement resulting lower dark current density of 6.5E-8 A/cm2 measured at 100K. The sample also shows a multicolor response at ~4.89μm and at ~7.08μm in the mid infrared range. Further optimization of the spacer thickness and dot layer deposition can improve the response towards the long infrared range.
本文报道了不同封盖成分的In0.5Ga0.5As点应变耦合多堆叠量子点红外探测器(qdip)的光学和电学性质。采用固体源分子束外延法制备了双层、三层、五层和七层耦合QDIPs,其中一组样品含有常规GaAs层(12nm),另一组样品含有总厚度相同的In0.15Ga0.85As层(3nm)和GaAs层(9nm)的组合盖层。整套应变耦合量子点(QDs)的基态光致发光峰与非耦合结构相比出现了红移。由于组合封顶结构中的In0.5Ga0.5As点的铟相互扩散减少,与GaAs封顶结构相比,观察到更高的红移,这归因于前者的点尺寸更大。与相应的GaAs封顶量子点相比,In0.15Ga0.85As/GaAs封顶量子点的全宽半最大值(FWHM)较低,点尺寸分布均匀。与所有结构相比,In0.15Ga0.85As/GaAs封盖的三层样品的峰值发射波长为1177nm, FWHM为15.67nm,活化能为339meV。三层样品似乎是最佳的堆叠,具有最佳的约束,在100K下测量的暗电流密度较低,为6.5E-8 A/cm2。样品在中红外~4.89μm和~7.08μm处也表现出多色响应。进一步优化间隔层厚度和点层沉积可以提高对长红外范围的响应。
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引用次数: 0
Experimental demonstration of precise holograms using complex light modulation 使用复光调制的精确全息图的实验演示
Pub Date : 2016-03-15 DOI: 10.1117/12.2208316
V. Parthiban, R. Kohn, Jinyang Liang, M. Becker
We generated a fully complex hologram by utilizing a combination of amplitude and phase spatial light modulators. A digital micromirror device (DMD) was used to produce the amplitude profile, and a liquid crystal spatial light modulator (SLM) produced the phase profile. A band-limited 4-f imaging system imaged the DMD onto the SLM to create a fully complex modulated wavefront, which reconstructed a holographic image at the desired location. We utilized backwards diffraction calculations, error-diffusion, and amplitude beam-shaping to design a hologram with small reconstruction error.
我们利用幅度和相位空间光调制器的组合产生了一个完全复杂的全息图。用数字微镜器件(DMD)产生振幅分布,用液晶空间光调制器(SLM)产生相位分布。一个带限4-f成像系统将DMD成像到SLM上,形成一个完全复杂的调制波前,在期望的位置重建全息图像。我们利用反向衍射计算、误差扩散和振幅光束整形来设计具有小重建误差的全息图。
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引用次数: 4
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