The paper presents the propagation characteristics of several complex laser field distributions. It also outlines the challenges associated with characterizing laser fields based on their M2 parameter. To alleviate the challenges, we introduce a new beam characterization technique for defining the propagation characteristics of arbitrary laser beams. The new technique is based on calculating laser beam propagation characteristics as a function of the field’s lateral coordinates, and provides a quantitative way of accounting for the fractional beam power diffracted outside of the beam central node. The technique, called FM2 (FM-squared), accounts for the spatial evolution of the M2 beam quality parameter. It provides insights into the beam quality of laser beams, including the quality of laser beams affected by diffraction or by wavefront distortions, as well as the complex field distributions resulting from a coherent superposition of the individual beams contained within optical phased arrays.
{"title":"Propagation characteristics and characterization challenges of complex laser field distributions","authors":"Y. Soskind","doi":"10.1117/12.2217526","DOIUrl":"https://doi.org/10.1117/12.2217526","url":null,"abstract":"The paper presents the propagation characteristics of several complex laser field distributions. It also outlines the challenges associated with characterizing laser fields based on their M2 parameter. To alleviate the challenges, we introduce a new beam characterization technique for defining the propagation characteristics of arbitrary laser beams. The new technique is based on calculating laser beam propagation characteristics as a function of the field’s lateral coordinates, and provides a quantitative way of accounting for the fractional beam power diffracted outside of the beam central node. The technique, called FM2 (FM-squared), accounts for the spatial evolution of the M2 beam quality parameter. It provides insights into the beam quality of laser beams, including the quality of laser beams affected by diffraction or by wavefront distortions, as well as the complex field distributions resulting from a coherent superposition of the individual beams contained within optical phased arrays.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127963737","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The optical dispersion can be obtained from the adjacent relative phase between neighbor peaks in the optical frequency comb. Thus, the dispersion measurement becomes possible by measuring the relative phase spectrum. Our group has experimentally confirmed the operation principle by parallel capturing of the dispersion spectrum using an arrayed waveguide grating. We have proposed a dual-heterodyne mixing that obtained relative phases (ΔΦ) by fitting data of beat intensity versus optical path length difference. The path difference was applied by a delay line. In this study, we removed the delay line to realize a fast measurement by measuring simultaneous three relative phases with path length differences corresponding to π⁄2 or π, with which we have measured the dispersion in millisecond speed (250 sec. in previous ). In general, it is effective to measured chromatic dispersion using high-speed signal transmission in the fundamental scientific research, such as the analysis of material properties and telecommunications. It is, however, that limit of cutoff frequency using measurement is the restriction on increasing of the speed. Our proposed method to observe it on a frequency domain is effective for the high-speed signal processing.
{"title":"Optical dispersion spectroscopy using optical frequency comb applied to dual-heterodyne mixing","authors":"K. Kasuga, Takayuki Miyamoto, T. Shioda","doi":"10.1117/12.2212365","DOIUrl":"https://doi.org/10.1117/12.2212365","url":null,"abstract":"The optical dispersion can be obtained from the adjacent relative phase between neighbor peaks in the optical frequency comb. Thus, the dispersion measurement becomes possible by measuring the relative phase spectrum. Our group has experimentally confirmed the operation principle by parallel capturing of the dispersion spectrum using an arrayed waveguide grating. We have proposed a dual-heterodyne mixing that obtained relative phases (ΔΦ) by fitting data of beat intensity versus optical path length difference. The path difference was applied by a delay line. In this study, we removed the delay line to realize a fast measurement by measuring simultaneous three relative phases with path length differences corresponding to π⁄2 or π, with which we have measured the dispersion in millisecond speed (250 sec. in previous ). In general, it is effective to measured chromatic dispersion using high-speed signal transmission in the fundamental scientific research, such as the analysis of material properties and telecommunications. It is, however, that limit of cutoff frequency using measurement is the restriction on increasing of the speed. Our proposed method to observe it on a frequency domain is effective for the high-speed signal processing.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"08 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127302887","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
M. H. Bergen, Daniel Guerrero, Xian Jin, Blago A. Hristovski, Hugo A. L. F. Chaves, R. Klukas, J. Holzman
Optical wireless (OW) technologies are an emerging field utilizing optical sources to replace existing radio wavelength technologies. The vast majority of work in OW focuses on communication; however, one smaller emerging field is indoor OW positioning. This emerging field essentially aims to replace GPS indoors. One of the primary competing methods in indoor OW positioning is angle-of-arrival (AOA). AOA positioning uses the received vectors from several optical beacons to triangulate its position. The reliability of this triangulation is fundamentally based on two aspects: the geometry of the optical receiver’s location compared to the optical beacon locations, and the ability for the optical receiver to resolve the incident vectors correctly. The optical receiver is quantified based on the standard deviation of the azimuthal and polar angles that define the measured vector. The quality of the optical beacon geometry is quantified using dilution of precision (DOP). This proceeding discusses the AOA standard deviation of an ultra-wide field-of-view (FOV) lens along with the DOP characteristics for several optical beacon geometries. The optical beacon geometries used were simple triangle, square, and hexagon optical beacon geometries. To assist the implementation of large optical beacon geometries it is proposed to use both frequency and wavelength division multiplexing. It is found that with an ultra-wide FOV lens, coupled with the appropriately sized optical beacon geometry, allow for high accuracy positioning over a large area. The results of this work will enable reliable OW positioning deployments.
{"title":"Design and optimization of indoor optical wireless positioning systems","authors":"M. H. Bergen, Daniel Guerrero, Xian Jin, Blago A. Hristovski, Hugo A. L. F. Chaves, R. Klukas, J. Holzman","doi":"10.1117/12.2208722","DOIUrl":"https://doi.org/10.1117/12.2208722","url":null,"abstract":"Optical wireless (OW) technologies are an emerging field utilizing optical sources to replace existing radio wavelength technologies. The vast majority of work in OW focuses on communication; however, one smaller emerging field is indoor OW positioning. This emerging field essentially aims to replace GPS indoors. One of the primary competing methods in indoor OW positioning is angle-of-arrival (AOA). AOA positioning uses the received vectors from several optical beacons to triangulate its position. The reliability of this triangulation is fundamentally based on two aspects: the geometry of the optical receiver’s location compared to the optical beacon locations, and the ability for the optical receiver to resolve the incident vectors correctly. The optical receiver is quantified based on the standard deviation of the azimuthal and polar angles that define the measured vector. The quality of the optical beacon geometry is quantified using dilution of precision (DOP). This proceeding discusses the AOA standard deviation of an ultra-wide field-of-view (FOV) lens along with the DOP characteristics for several optical beacon geometries. The optical beacon geometries used were simple triangle, square, and hexagon optical beacon geometries. To assist the implementation of large optical beacon geometries it is proposed to use both frequency and wavelength division multiplexing. It is found that with an ultra-wide FOV lens, coupled with the appropriately sized optical beacon geometry, allow for high accuracy positioning over a large area. The results of this work will enable reliable OW positioning deployments.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"32 34","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132938589","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We propose the adaptive quadrature detection for multicarrier continuous-variable quantum key distribution (CVQKD). A multicarrier CVQKD scheme uses Gaussian subcarrier continuous variables for the information conveying and Gaussian sub-channels for the transmission. The proposed multicarrier detection scheme dynamically adapts to the subchannel conditions using a corresponding statistics which is provided by our sophisticated sub-channel estimation procedure. The sub-channel estimation phase determines the transmittance coefficients of the sub-channels, which information are used further in the adaptive quadrature decoding process. We define a technique to estimate the transmittance conditions of the sub-channels. We introduce the terms of single and collective adaptive quadrature detection. We prove the achievable error probabilities, the signal-to-noise ratios, and quantify the attributes of the framework. The adaptive detection scheme allows to utilize the extra resources of multicarrier CVQKD and to maximize the amount of transmittable valuable information in diverse measurement and transmission conditions. The framework is particularly convenient for experimental CVQKD scenarios.
{"title":"Adaptive Gaussian quadrature detection for continuous-variable quantum key distribution","authors":"L. Gyongyosi, S. Imre","doi":"10.1117/12.2211743","DOIUrl":"https://doi.org/10.1117/12.2211743","url":null,"abstract":"We propose the adaptive quadrature detection for multicarrier continuous-variable quantum key distribution (CVQKD). A multicarrier CVQKD scheme uses Gaussian subcarrier continuous variables for the information conveying and Gaussian sub-channels for the transmission. The proposed multicarrier detection scheme dynamically adapts to the subchannel conditions using a corresponding statistics which is provided by our sophisticated sub-channel estimation procedure. The sub-channel estimation phase determines the transmittance coefficients of the sub-channels, which information are used further in the adaptive quadrature decoding process. We define a technique to estimate the transmittance conditions of the sub-channels. We introduce the terms of single and collective adaptive quadrature detection. We prove the achievable error probabilities, the signal-to-noise ratios, and quantify the attributes of the framework. The adaptive detection scheme allows to utilize the extra resources of multicarrier CVQKD and to maximize the amount of transmittable valuable information in diverse measurement and transmission conditions. The framework is particularly convenient for experimental CVQKD scenarios.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"157 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133247228","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mingze Sun, T. Sun, Youhai Liu, Li Zhu, Fang Liu, Yidong Huang, C. Chang-Hasnain
Optical biosensors with the high sensitivity is an important tool for environment monitoring, disease diagnosis and drug development. Integrating the biosensor could reduce the size and cost and is desirable for home and outdoor use. However, the integrated structure always results in the worsening of sensitivity and narrowing of sensing range, especially for small molecule sensing. In this work, we propose an integrated plasmonic biosensor based on the resonant structure composed of dielectric grating and metal film. With vertically incident light from the grating side, the surface plasmon polariton (SPP) mode could be excited at certain wavelength and the reflected light would vanish. Simulation results indicate that, when varying refractive index (ndet) of detection layer, the energy of reflected light changes dramatically. Assuming the resolution of the power meter is 0.01dB, the sensing resolution could be 4.37×10-6 RIU, which is very close to the bulk lens based SPP biosensor by monitoring the light intensity variation. Since antibody and antigen always have the size of tens of nanometers, it is necessary to check the sensing ability of the sensor in tens of nanometers. Fixing ndet and varying the thickness of detection layer, calculation result demonstrates that the reflected light energy is sensitive to the thickness change with one hundred nanometers. This attributes to the surface mode property of SPP mode.
{"title":"Integrated plasmonic refractive index sensor based on grating/metal film resonant structure","authors":"Mingze Sun, T. Sun, Youhai Liu, Li Zhu, Fang Liu, Yidong Huang, C. Chang-Hasnain","doi":"10.1117/12.2218558","DOIUrl":"https://doi.org/10.1117/12.2218558","url":null,"abstract":"Optical biosensors with the high sensitivity is an important tool for environment monitoring, disease diagnosis and drug development. Integrating the biosensor could reduce the size and cost and is desirable for home and outdoor use. However, the integrated structure always results in the worsening of sensitivity and narrowing of sensing range, especially for small molecule sensing. In this work, we propose an integrated plasmonic biosensor based on the resonant structure composed of dielectric grating and metal film. With vertically incident light from the grating side, the surface plasmon polariton (SPP) mode could be excited at certain wavelength and the reflected light would vanish. Simulation results indicate that, when varying refractive index (ndet) of detection layer, the energy of reflected light changes dramatically. Assuming the resolution of the power meter is 0.01dB, the sensing resolution could be 4.37×10-6 RIU, which is very close to the bulk lens based SPP biosensor by monitoring the light intensity variation. Since antibody and antigen always have the size of tens of nanometers, it is necessary to check the sensing ability of the sensor in tens of nanometers. Fixing ndet and varying the thickness of detection layer, calculation result demonstrates that the reflected light energy is sensitive to the thickness change with one hundred nanometers. This attributes to the surface mode property of SPP mode.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115345855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We studied the microcrystalline and nanocrystalline silicon thin films by means of Raman spectroscopy technique. The applied external electric field causes the changes in the electric dipoles’ orientations to compensate the external field, and migration the atom of impurities, such as hydrogen, and point defects. The Si-O dipoles play the most significant role because of electron affinity for oxygen. Phonon eigen-frequencies 480 cm-1 for amorphous silicon Raman spectra around and 520 cm-1 for crystalline TO and LO modes are varied in their energy positions because of wide spread in bonding variation for Si and O atoms, types of dipoles for different point defects and isotopic variations. It is assumed that the nanocrystals which have grain boundary with oxygen atoms incorporated into silicon were destroyed in their crystal structure by Si-O dipoles reorientations caused by applied field. The initial crystal orientation was (111). The incorporated oxygen atoms are adsorbed in determined places. Their position results the appearance of numerous dangling bonds which are multiplied by the electric field and create the deep cracks in crystals. The crystal order is damaged along the axis that is perpendicular to (111). It is supposed that the microcrystal is a fractal structure on 2D plane.
{"title":"Crystalline phase destruction in silicon films by applied external electrical field and detected by using the laser spectroscopy","authors":"D. E. Milovzorov","doi":"10.1117/12.2208270","DOIUrl":"https://doi.org/10.1117/12.2208270","url":null,"abstract":"We studied the microcrystalline and nanocrystalline silicon thin films by means of Raman spectroscopy technique. The applied external electric field causes the changes in the electric dipoles’ orientations to compensate the external field, and migration the atom of impurities, such as hydrogen, and point defects. The Si-O dipoles play the most significant role because of electron affinity for oxygen. Phonon eigen-frequencies 480 cm-1 for amorphous silicon Raman spectra around and 520 cm-1 for crystalline TO and LO modes are varied in their energy positions because of wide spread in bonding variation for Si and O atoms, types of dipoles for different point defects and isotopic variations. It is assumed that the nanocrystals which have grain boundary with oxygen atoms incorporated into silicon were destroyed in their crystal structure by Si-O dipoles reorientations caused by applied field. The initial crystal orientation was (111). The incorporated oxygen atoms are adsorbed in determined places. Their position results the appearance of numerous dangling bonds which are multiplied by the electric field and create the deep cracks in crystals. The crystal order is damaged along the axis that is perpendicular to (111). It is supposed that the microcrystal is a fractal structure on 2D plane.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115712582","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Mohammad Azari, Nasim Habibi, M. Abolbashari, F. Farahi
We have developed a compressive hyperspectral imaging system that is based on single-pixel camera architecture. We have incorporated the developed system in a scanning white-light interferometer (SWLI) and showed that replacing SWLI’s CCD-based camera by the compressive hyperspectral imaging system, we have access to high-resolution multispectral images of interferometer’s fringes. Using these multi-spectral images, the system is capable of simultaneous spectroscopy of the surface, which can be used, for example, to eliminate the effect of surface contamination and providing new spectral information for fringe signal analysis which could be used to reduce the need for vertical scan, therefore making height measurement more tolerant to object’s position.
{"title":"Hyperspectral scanning white light interferometry based on compressive imaging","authors":"Mohammad Azari, Nasim Habibi, M. Abolbashari, F. Farahi","doi":"10.1117/12.2213101","DOIUrl":"https://doi.org/10.1117/12.2213101","url":null,"abstract":"We have developed a compressive hyperspectral imaging system that is based on single-pixel camera architecture. We have incorporated the developed system in a scanning white-light interferometer (SWLI) and showed that replacing SWLI’s CCD-based camera by the compressive hyperspectral imaging system, we have access to high-resolution multispectral images of interferometer’s fringes. Using these multi-spectral images, the system is capable of simultaneous spectroscopy of the surface, which can be used, for example, to eliminate the effect of surface contamination and providing new spectral information for fringe signal analysis which could be used to reduce the need for vertical scan, therefore making height measurement more tolerant to object’s position.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116672316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Tongbram, N. Sehara, J. Singhal, D. Panda, S. Chakrabarti
In this paper, we discuss detailed strain effects on a bilayer InAs quantum dot with varying GaAs barrier thickness. The exploration of the range of GaAs barrier thickness effect on the InAs/GaAs quantum dots and detailed structure were characterized by transmission electron microscopy, atomic force microscopy, high-resolution X-Ray diffraction (HRXRD) and Raman spectroscopy to evaluate the impact of strained layer and also studied the optical properties by photoluminescence (PL) measurements. On varying the thickness of the GaAs barrier layer, the role of strain demonstrates a promising approach to tuning the quantum dot morphologies and structures and hence, optical properties. This can be easily observed from the HRXRD rocking curves which result in a shift of the zero order peak position. Both in-out-plane strain decrease as the thickness is increased. Even the Raman scattering peaks justify the decrease of strain on increasing the GaAs barrier thickness. Therefore, higher strain propagation indicates redshift in the emission wavelength and the dots are much more uniformly spread out. Structure with a range of 5.5nm-8.5nm GaAs barrier thickness interlayer reveals even high-quality crystallinity of the epilayers with the FWHM of 21.6 arcsecs for the (004) reflection. Uncoupled structure responses low crystalline quality with FWHM of 109 arcsecs. Dislocation density increases drastically with a decrease of strain which is an important aspect of lasers and other devices in increasing their efficiency. Activation energy also shows a positive correlation with coupling structure. Therefore, controlling diffusion length may be key to reducing defects in several strained structures.
{"title":"A detailed investigation of strain patterning effect on bilayer InAs/GaAs quantum dot with varying GaAs barrier thickness","authors":"B. Tongbram, N. Sehara, J. Singhal, D. Panda, S. Chakrabarti","doi":"10.1117/12.2212767","DOIUrl":"https://doi.org/10.1117/12.2212767","url":null,"abstract":"In this paper, we discuss detailed strain effects on a bilayer InAs quantum dot with varying GaAs barrier thickness. The exploration of the range of GaAs barrier thickness effect on the InAs/GaAs quantum dots and detailed structure were characterized by transmission electron microscopy, atomic force microscopy, high-resolution X-Ray diffraction (HRXRD) and Raman spectroscopy to evaluate the impact of strained layer and also studied the optical properties by photoluminescence (PL) measurements. On varying the thickness of the GaAs barrier layer, the role of strain demonstrates a promising approach to tuning the quantum dot morphologies and structures and hence, optical properties. This can be easily observed from the HRXRD rocking curves which result in a shift of the zero order peak position. Both in-out-plane strain decrease as the thickness is increased. Even the Raman scattering peaks justify the decrease of strain on increasing the GaAs barrier thickness. Therefore, higher strain propagation indicates redshift in the emission wavelength and the dots are much more uniformly spread out. Structure with a range of 5.5nm-8.5nm GaAs barrier thickness interlayer reveals even high-quality crystallinity of the epilayers with the FWHM of 21.6 arcsecs for the (004) reflection. Uncoupled structure responses low crystalline quality with FWHM of 109 arcsecs. Dislocation density increases drastically with a decrease of strain which is an important aspect of lasers and other devices in increasing their efficiency. Activation energy also shows a positive correlation with coupling structure. Therefore, controlling diffusion length may be key to reducing defects in several strained structures.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122566157","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
V. Zamora, Angelina Bogatzki, Norbert Arndt-Staufenbiel, J. Hofmann, H. Schröder
We propose two low-cost and robust optical fiber systems based on the photonic lantern (PL) technology for operating at 635 nm and 1550 nm. The PL is an emerging technology that couples light from a multi-mode (MM) fiber to several single-mode (SM) fibers via a low-loss adiabatic transition. This bundle of SM fibers is observed as a MM fiber system whose spatial modes are the degenerate supermodes of the bundle. The adiabatic transition allows that those supermodes evolve into the modes of the MM fiber. Simulations of the MM fiber end structure and its taper transition have been performed via functional mode solver tools in order to understand the modal evolution in PLs. The modelled design consists of 7 SM fibers inserted into a low-index capillary. The material and geometry of the PLs are chosen such that the supermodes match to the spatial modes of the desired step-index MM fiber in a moderate loss transmission. The dispersion of materials is also considered. These parameters are studied in two PL systems in order to reach a spectral transmission from 450 nm to 1600 nm. Additionally, an analysis of the geometry and losses due to the mismatching of modes is presented. PLs are typically used in the fields of astrophotonics and space photonics. Recently, they are demonstrated as mode converters in telecommunications, especially focusing on spatial division multiplexing. In this study, we show the use of PLs as a promising interconnecting tool for the development of miniaturized spectrometers operating in a broad wavelength range.
{"title":"Analysis of multi-mode to single-mode conversion at 635 nm and 1550 nm","authors":"V. Zamora, Angelina Bogatzki, Norbert Arndt-Staufenbiel, J. Hofmann, H. Schröder","doi":"10.1117/12.2213333","DOIUrl":"https://doi.org/10.1117/12.2213333","url":null,"abstract":"We propose two low-cost and robust optical fiber systems based on the photonic lantern (PL) technology for operating at 635 nm and 1550 nm. The PL is an emerging technology that couples light from a multi-mode (MM) fiber to several single-mode (SM) fibers via a low-loss adiabatic transition. This bundle of SM fibers is observed as a MM fiber system whose spatial modes are the degenerate supermodes of the bundle. The adiabatic transition allows that those supermodes evolve into the modes of the MM fiber. Simulations of the MM fiber end structure and its taper transition have been performed via functional mode solver tools in order to understand the modal evolution in PLs. The modelled design consists of 7 SM fibers inserted into a low-index capillary. The material and geometry of the PLs are chosen such that the supermodes match to the spatial modes of the desired step-index MM fiber in a moderate loss transmission. The dispersion of materials is also considered. These parameters are studied in two PL systems in order to reach a spectral transmission from 450 nm to 1600 nm. Additionally, an analysis of the geometry and losses due to the mismatching of modes is presented. PLs are typically used in the fields of astrophotonics and space photonics. Recently, they are demonstrated as mode converters in telecommunications, especially focusing on spatial division multiplexing. In this study, we show the use of PLs as a promising interconnecting tool for the development of miniaturized spectrometers operating in a broad wavelength range.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128591279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Shuai Sun, Abdel-Hameed A. Badaway, Vikram K. Narayana, T. El-Ghazawi, V. Sorger
In this paper we benchmark various interconnect technologies including electrical, photonic, and plasmonic options. We contrast them with hybridizations where we consider plasmonics for active manipulation devices, and photonics for passive propagation integrated circuit elements, and further propose another novel hybrid link that utilizes an on chip laser for intrinsic modulation thus bypassing electro-optic modulation. Link benchmarking proves that hybridization can overcome the shortcomings of both pure photonic and plasmonic links. We show superiority in a variety of performance parameters such as point-to-point latency, energy efficiency, capacity, ability to support wavelength division multiplexing, crosstalk coupling length, bit flow density and Capability-to-Latency-Energy-Area Ratio.
{"title":"Low latency, area, and energy efficient Hybrid Photonic Plasmonic on-chip Interconnects (HyPPI)","authors":"Shuai Sun, Abdel-Hameed A. Badaway, Vikram K. Narayana, T. El-Ghazawi, V. Sorger","doi":"10.1117/12.2217284","DOIUrl":"https://doi.org/10.1117/12.2217284","url":null,"abstract":"In this paper we benchmark various interconnect technologies including electrical, photonic, and plasmonic options. We contrast them with hybridizations where we consider plasmonics for active manipulation devices, and photonics for passive propagation integrated circuit elements, and further propose another novel hybrid link that utilizes an on chip laser for intrinsic modulation thus bypassing electro-optic modulation. Link benchmarking proves that hybridization can overcome the shortcomings of both pure photonic and plasmonic links. We show superiority in a variety of performance parameters such as point-to-point latency, energy efficiency, capacity, ability to support wavelength division multiplexing, crosstalk coupling length, bit flow density and Capability-to-Latency-Energy-Area Ratio.","PeriodicalId":122702,"journal":{"name":"SPIE OPTO","volume":"42 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123608431","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：