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2022 IEEE MTT-S International Wireless Symposium (IWS)最新文献

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Independent phase and amplitude controlled transmitarray antenna with high gain and low sidelobes 具有高增益和低副瓣的独立相位和幅度控制的发射阵列天线
Pub Date : 2022-08-12 DOI: 10.1109/IWS55252.2022.9977551
Liyuan Yin, Z. Xue, Qihao Lv, Binchao Zhang, W. Ren, Weiming Li, Cheng Jin
A novel transmitarray antenna (TA) consisted of the element which is proposed to achieve the capability to control the transmission phase and magnitude independently by simply changing two geometric parameters of it. The structure works as the element of the TA can cover 360°phase range and the desired magnitude distribution. The advantages of this design are more flexibility to adjust the phase and magnitude to enable the TA to get high gain and low SLLs directly and efficiently. The simulated results verify the design concept.
提出了一种由该元件组成的新型发射阵列天线(TA),通过简单地改变其两个几何参数来实现对传输相位和幅度的独立控制。该结构的工作原理是TA元件可以覆盖360°相位范围和所需的幅度分布。该设计的优点是更灵活地调整相位和幅度,使TA能够直接有效地获得高增益和低sll。仿真结果验证了设计理念。
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引用次数: 0
A Neural Network-Based Modeling Method for Terminal Charges in GaN HEMTs 基于神经网络的GaN hemt终端电荷建模方法
Pub Date : 2022-08-12 DOI: 10.1109/IWS55252.2022.9978118
Haorui Luo, Yongxin Guo
In this paper, the detailed description of neural network (NN)-based modeling method for terminal charges in gallium nitride high electron mobility transistor (GaN HEMT) is presented. This method helps to overcome originally high modeling difficulty of terminal charges while their modeling accuracy can be guaranteed. A two-hidden layer ANN is constructed to model the source-end terminal charge (qis) and drain-end terminal charge ($q$id) in the MIT Virtual Source (MVS) theory, respectively. The MVS theory is used to connect the ANN-based terminal charges and drain current. This method is benchmarked with accurate drain current performance.
本文详细介绍了基于神经网络(NN)的氮化镓高电子迁移率晶体管(GaN HEMT)终端电荷建模方法。该方法在保证终端装药建模精度的同时,克服了终端装药原本较高的建模难度。构建了一个两隐层人工神经网络,分别对MIT虚拟源(MVS)理论中的源端终端电荷(qis)和漏端终端电荷(q $id)进行建模。MVS理论用于连接基于人工神经网络的终端电荷和漏极电流。该方法具有精确的漏极电流性能。
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引用次数: 1
A 52.5GHz-66GHz High Conversion Gain Frequency Tripler using $.13mu text{m SiGe}$ HBT process 一种52.5GHz-66GHz高转换增益三倍频器。mu text{m SiGe}$ HBT进程
Pub Date : 2022-08-12 DOI: 10.1109/IWS55252.2022.9977771
Lu Yuxiang, Li Zekun, Yu Jiayang, Li Huanbo, Zhou Peigen, Lu Haiyan, Chen Jixin
A 52.5GHz-66GHz frequency tripler using $0.13mumathrm{m}$ SiGe HBT process is presented, which adopts a single balanced structure, with a high conversion gain up to 14.3dB. A maximum saturated output power $(mathrm{P}_{text{sat}})$ up to 12.3dBm@57GHz is measured, with a 3-dB bandwidth of 13.5GHz (22.7% relative bandwidth). A folded marchand balun is applied to transform single-end signals into differential ones, with an amplitude difference less than 0.5dB and a phase difference within $180pm 6$ degrees. A gain enhancing technique is also adopted. The chip size is $620mumathrm{m}times 200mumathrm{m}$ without pads and $880mumathrm{m}times520mumathrm{m}$ altogether.
提出了一种采用$0.13mu mathm {m}$ SiGe HBT工艺的52.5GHz-66GHz三倍频器,该三倍频器采用单平衡结构,转换增益高达14.3dB。测量到最大饱和输出功率$( mathm {P}_{text{sat}})$至12.3dBm@57GHz, 3db带宽为13.5GHz(22.7%相对带宽)。采用折叠磁平衡器将单端信号转换为差分信号,其幅值差小于0.5dB,相位差在180°内。还采用了增益增强技术。芯片尺寸为620mu mathm {m}$乘以200mu mathm {m}$,不含焊盘,总共为880mu mathm {m}$乘以520mu mathm {m}$。
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引用次数: 0
Design of Dual-Band Filter on 3D Printable Dual-Mode Cylinder Cavity 可3D打印双模圆柱腔双波段滤波器设计
Pub Date : 2022-08-12 DOI: 10.1109/IWS55252.2022.9978141
MingYue Pan, Gang Zhang, Zhengyu Sun, Hua Yang, Xiu Yin Zhang, Wanchun Tang
In this paper, a new design of dual-band filter is proposed based on 3D printable dual-mode cylinder cavity. By externally loading metal cylinder perturbations to the traditional cylinder cavity, a pair of degenerate TE111modes are separated and exploited for realizing dual-band filtering response. Meanwhile, by elaborately rotating the feeding ports to introduce the bypass coupling and constructing the transversal coupling, multiple transmission zeros can be generated, bringing out high frequency selectivity. In order to verify the design concept, a dual-mode dual-band filter operating at 9.95GHz and 10.25GHz is designed, modeled in a 3D printable configuration and validated on the high frequency structure simulation (HFSS).
本文提出了一种基于可3D打印双模圆柱腔的双带滤波器设计方案。通过在传统圆柱腔外加载金属圆柱扰动,分离并利用一对简并te111模实现双带滤波响应。同时,通过精心旋转馈电口引入旁路耦合,构造横向耦合,可产生多个传输零点,具有较高的频率选择性。为了验证设计理念,设计了一个工作在9.95GHz和10.25GHz的双模双带滤波器,在3D可打印配置中建模,并在高频结构仿真(HFSS)上进行了验证。
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引用次数: 0
Error analysis and verification of fully polarized microwave radiometer based on correlation coefficient 基于相关系数的全极化微波辐射计误差分析与验证
Pub Date : 2022-08-12 DOI: 10.1109/IWS55252.2022.9978023
Pengju Dang, Shangyu Shen, C. Dong, Jidong Chi, Yinan Li, Rongchuan Lv, Hao Li
This paper introduces the basic principle of digital correlation full polarization microwave radiometer, and deduces the calculation method of correlation coefficient standard deviation and system error by sensitivity intermediate parameter, and average the measured data according to the actual application conditions of the microwave radiometer. The 10.7 GHz digital correlation full-polarization microwave radiometer developed by ourselves is verified by using full-polarization calibration source. The experimental results show that the standard deviation of the correlation coefficient and the calculation method of the system error are accurate, the system performance meets the practical application.
介绍了数字相关全极化微波辐射计的基本原理,推导出了利用灵敏度中间参数计算相关系数标准差和系统误差的方法,并根据微波辐射计的实际应用情况对测量数据进行了平均。利用全极化定标源对自行研制的10.7 GHz数字相关全极化微波辐射计进行了验证。实验结果表明,相关系数的标准差和系统误差的计算方法是准确的,系统性能满足实际应用。
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引用次数: 0
Design of Ridged Structural Composite Transmission Line 脊状结构复合输电线路的设计
Pub Date : 2022-08-12 DOI: 10.1109/IWS55252.2022.9977622
Hongbin Zhu, Lei Ji, Xiaochun Li, Junfa Mao
In this paper, a structural composite transmission line composed of the ridged substrate integrated waveguide (RSIW) and the embedded ground coplanar waveguide (GCPW) is proposed for parallel transmission of multi-mode signals. The structure makes full use of the waveguide space to efficiently excite the TE20 mode of the RSIW and the quasi- TEM mode of the GCPW without increasing the number of substrate layers. Simulation results show that the insertion loss $vert S_{21}vert$ of the RSIW is less than 1.3dB, and $vert S_{43}vert$ of the GCPW is less than O.5dB within their respective working bandwidth. The isolation $vert S_{31}vert$ between the two waveguides is greater than 55dB. The proposed structural composite transmission line would be attractive for future multi-frequency and multi-function system.
本文提出了一种由脊状衬底集成波导(RSIW)和嵌入式地共面波导(GCPW)组成的结构复合传输线,用于多模信号的并行传输。该结构充分利用波导空间,在不增加衬底层数的情况下有效激发RSIW的TE20模式和GCPW的准TEM模式。仿真结果表明,在各自的工作带宽内,RSIW的插入损耗$vert S_{21}vert$小于1.3dB, GCPW的插入损耗$vert S_{43}vert$小于0.5 db。两个波导之间的隔离度$vert $ {31}vert$大于55dB。本文提出的结构复合输电线路在未来的多频、多功能系统中具有广阔的应用前景。
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引用次数: 0
A 77 GHz 4-Way Power Amplifier with 20.2 dBm Output Power in 40 nm CMOS 一个输出功率为20.2 dBm的40nm CMOS 77 GHz 4路功率放大器
Pub Date : 2022-08-12 DOI: 10.1109/IWS55252.2022.9977554
Chao Yang, Xiaoming Liu, Wandong Tao, Yuekang Guo, J. Jin
This paper presents a fully integrated 77 GHz power amplifier (PA) in a 40 nm bulk CMOS process for automotive radar. A 4-way series-parallel power combiner using the distributed active transformer (DAT) technique is proposed to increase output power. The DAT technique reduces the loss and improved the phase/gain balance between paths. To achieve the optimal output power and efficiency, load pull matching is performed using the DAT and the connection lines. At 77 GHz, this proposed two-stage PA achieves a saturated output power $(mathbf{P}_{mathbf{sat}})$ of 20.4 dBm and a peak power-added efficiency $(mathbf{PAE}_{max})$ of 18%. It demonstrates a bandwidth of 12 GHz with a peak power gain of 12dB. The core area of the PAis 0.15 mm2 and the working supply is 1.1V.
提出了一种用于车载雷达的40nm体CMOS全集成77ghz功率放大器(PA)。为了提高输出功率,提出了一种采用分布式有源变压器(DAT)技术的四路串并联功率合成器。该技术降低了损耗,改善了路径间的相位/增益平衡。为了达到最佳的输出功率和效率,使用DAT和连接线进行负载拉匹配。在77 GHz时,该两级放大器的饱和输出功率$(mathbf{P}_{mathbf{sat}})$为20.4 dBm,峰值功率附加效率$(mathbf{PAE}_{max})$为18%。它的带宽为12ghz,峰值功率增益为12dB。PAis的核心面积为0.15 mm2,工作电源为1.1V。
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引用次数: 0
Bandwidth extension of continuous class-F power amplifier with phase-shifted voltage waveform 带相移电压波形的连续型f类功率放大器的带宽扩展
Pub Date : 2022-08-12 DOI: 10.1109/IWS55252.2022.9977714
Chaoyi Huang, Yuchuan Zhou, Huadong Wang
This paper presents a method for bandwidth extension in high-efficiency power amplifier (PA) design. With a phase shift in voltage waveform of the continuous class-F mode, real part of harmonic impedance is generated to expand the impedance design space at the expense of little lossy of performance. The simulation and measurement, conducted on a broadband PA covering 1.9-3.1 GHz based on the proposed method, show a good agreement with the theory. Measured results show that the fabricated PA has a drain efficiency of 66.5%-75% when delivering 41-42.3 dBm output power with a gain of 11-12.7 dB. Under a 20-MHz LTE signal excitation at 2.6 GHz, the PA exhibits an adjacent channel leakage ratio of -36.5 dBc at an average output power of 35 dBm without linearization.
提出了一种高效功率放大器(PA)设计中带宽扩展的方法。连续f类模式的电压波形发生相移,产生谐波阻抗实部,以性能损失较小为代价扩大了阻抗设计空间。在覆盖1.9 ~ 3.1 GHz的宽带扩频放大器上进行了仿真和测试,结果与理论吻合较好。测量结果表明,当输出功率为41 ~ 42.3 dBm,增益为11 ~ 12.7 dB时,漏极效率为66.5% ~ 75%。在2.6 GHz的20 mhz LTE信号激励下,在没有线性化的情况下,PA在平均输出功率为35 dBm时的相邻通道泄漏比为-36.5 dBc。
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引用次数: 0
A V-band Differential Colpitts Push-Push VCO in 130 nm SiGe BiCMOS 130 nm SiGe BiCMOS的v波段差分柯氏推推压控振荡器
Pub Date : 2022-08-12 DOI: 10.1109/IWS55252.2022.9977958
Jiayang Yu, Jixin Chen, Debin Hou, P. Yan, Zhe Chen
A V-band push-push VCO operating from 68.5 GHz to 73 GHz is presented. This design introduces a capacitor at the common-base node, which enhances odd mode oscillation and maximizes the common-mode impedance of the differential oscillator. At the output end, a transformer is used to decouple both fundamental and 2nd harmonic frequency signals. The desired 2nd harmonic frequency signal is delivered to the output, whereas the fundamental frequency signal can be fed back for phase-detection in a phase-locked loop. The implemented VCO delivers a peak output power of 1.2 dBm at 72.5 GHz, and achieves a phase noise of -103 dBc/Hz at 1-MHz offset, respectively. The circuit is designed on a 130 nm SiGe BiCMOS technology with $f_{T}/f_{max}$ of 200/300 GHz. The total power consumption of the signal source is 50 mW with a supply voltage of 1.8 V.
提出了一种工作频率为68.5 GHz ~ 73 GHz的v波段推推式压控振荡器。本设计在共基节点引入电容,增强了差分振荡器的奇模振荡,使其共模阻抗最大化。在输出端,变压器用于对基频和二次谐波频率信号进行去耦。所需的二谐波频率信号被传递到输出端,而基频信号可以在锁相环中反馈进行相位检测。所实现的VCO在72.5 GHz时的峰值输出功率为1.2 dBm,在1 mhz偏移时的相位噪声分别为-103 dBc/Hz。该电路采用130 nm SiGe BiCMOS技术设计,f_{T}/f_{max}$为200/300 GHz。信号源的总功耗为50mw,电源电压为1.8 V。
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引用次数: 0
Digital Predistortion of RF Power Amplifiers Considering the Group Delay Distortion 考虑群延迟失真的射频功率放大器数字预失真
Pub Date : 2022-08-12 DOI: 10.1109/IWS55252.2022.9978136
Lei Su, W. Qiao, Hongmin Li, Chengye Jiang, Guichen Yang, Falin Liu
In this paper, a novel adaptive time alignment method for digital predistortion (DPD) is proposed to deal with the linearization of power amplifiers (PAs) when severer group delay distortion (GDD) exists in the feedback path. Group delay mismatch significantly influences the precision during the extraction of the DPD model's coefficients. Based on the mathematical analysis of group delay, the proposed method can weaken the effects of GDD. Experiments' results confirm that the DPD model with the proposed method has better performance than the DPD model only with the traditional time alignment method.
针对反馈路径中存在较大群延迟失真(GDD)时功率放大器的线性化问题,提出了一种新的数字预失真(DPD)自适应时间对准方法。群延迟失配严重影响了DPD模型系数提取的精度。在对群延迟进行数学分析的基础上,提出的方法可以减弱GDD的影响。实验结果表明,采用该方法得到的DPD模型比仅采用传统时间对准方法得到的DPD模型具有更好的性能。
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引用次数: 0
期刊
2022 IEEE MTT-S International Wireless Symposium (IWS)
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