Pub Date : 2022-08-12DOI: 10.1109/IWS55252.2022.9977776
Zeqing Du, M. Jiang, Yin Li, Shiyan Wang, S. Wong, Jun Hu
A novel orbital angular momentum(OAM) electromagnetic generator based on Fabry-Perot(FP) resonant cavity is proposed in this work. The proposed OAM waves generator is consisted of a feed antenna, and a partially reflective surface(PRS) loaded with a three-dimensional(3D) spiral phase plate. The 3D spiral phase plate is set on the top side of PRS to provide different phases for plane waves with different directions to generate OAM electromagnetic waves. The most important feature of the proposed OAM waves generator is high gain, smaller divergence angle and simple feeding source, without external complex feed network for array of OAM antenna. Then we analyze and discuss the simulated results to prove the feasibility of generating OAM waves.
{"title":"A Novel Orbital Angular Momentum(OAM) Waves Generator based on Fabry-Perot Resonant Cavity","authors":"Zeqing Du, M. Jiang, Yin Li, Shiyan Wang, S. Wong, Jun Hu","doi":"10.1109/IWS55252.2022.9977776","DOIUrl":"https://doi.org/10.1109/IWS55252.2022.9977776","url":null,"abstract":"A novel orbital angular momentum(OAM) electromagnetic generator based on Fabry-Perot(FP) resonant cavity is proposed in this work. The proposed OAM waves generator is consisted of a feed antenna, and a partially reflective surface(PRS) loaded with a three-dimensional(3D) spiral phase plate. The 3D spiral phase plate is set on the top side of PRS to provide different phases for plane waves with different directions to generate OAM electromagnetic waves. The most important feature of the proposed OAM waves generator is high gain, smaller divergence angle and simple feeding source, without external complex feed network for array of OAM antenna. Then we analyze and discuss the simulated results to prove the feasibility of generating OAM waves.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130704435","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
In this paper, an efficiency improvement method in multistage power amplifier (PA) is proposed. Combined with the power stage transistor operate in continuous class-F and the driver stage transistor operate in continuous class-F-1, the power-added efficiency (PAE) of multistage PA can be further improved. Meanwhile, a large power push ratio is adopted to determine the size of transistors at each stage and a voltage divider circuit is used to maintain the same bias. The proposed method was verified by implementing an MMIC PA utilizing a 0.1 $mu text{mGaAs}$ pHEMT process. The PA is used for the 17–21 GHz satellite communication system with a saturated output power of 1 W and an average PAE higher than 44% while having a small signal gain of 23 dB.
{"title":"Design of a 17-21 GHz Power Amplifier Based on an Extended Resistive Continuous Mode","authors":"Chupeng Yi, Yang Lu, Ziyue Zhao, Hengshuang Zhang, Bochao Zhao, Peixian Li, Xiao-hua Ma, Yue Hao","doi":"10.1109/IWS55252.2022.9977811","DOIUrl":"https://doi.org/10.1109/IWS55252.2022.9977811","url":null,"abstract":"In this paper, an efficiency improvement method in multistage power amplifier (PA) is proposed. Combined with the power stage transistor operate in continuous class-F and the driver stage transistor operate in continuous class-F-1, the power-added efficiency (PAE) of multistage PA can be further improved. Meanwhile, a large power push ratio is adopted to determine the size of transistors at each stage and a voltage divider circuit is used to maintain the same bias. The proposed method was verified by implementing an MMIC PA utilizing a 0.1 $mu text{mGaAs}$ pHEMT process. The PA is used for the 17–21 GHz satellite communication system with a saturated output power of 1 W and an average PAE higher than 44% while having a small signal gain of 23 dB.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114197563","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/IWS55252.2022.9977592
Yan Hu, Jinlong Su, Fei Hu, Hongfei Wu
Passive millimeter-wave (MMW) sensing has been used for several close-range applications such as security checks, military detection, terrain modeling, and so on. By measuring the electromagnetic energy radiated by different materials, it is pos-sible to distinguish them. However, the brightness temperature (TB) can not be directly used for material classification, and those TB-derived material discriminators are not stable charac-terization parameters. In this article, we analyze the multi-polarization brightness temperature model and propose the equivalent permittivity (EP) to characterize the material infor-mation. This parameter, to some extent, is not affected by inci-dent angle and can be derived by multi-polarization measure-ment. The significant advantage of EP is that it reduces the di-mension of parameters in the model. Therefore, it is conducive to extracting object information based on the MMW radiation model. As an application example, we used EP in this article for object classification. Based on EP, we successfully classified four objects with an accuracy of about 99%. Future applications of our method include liquid analysis and scene monitoring.
{"title":"Characterization Parameter of Material Information in Passive Millimeter-wave Sensing","authors":"Yan Hu, Jinlong Su, Fei Hu, Hongfei Wu","doi":"10.1109/IWS55252.2022.9977592","DOIUrl":"https://doi.org/10.1109/IWS55252.2022.9977592","url":null,"abstract":"Passive millimeter-wave (MMW) sensing has been used for several close-range applications such as security checks, military detection, terrain modeling, and so on. By measuring the electromagnetic energy radiated by different materials, it is pos-sible to distinguish them. However, the brightness temperature (TB) can not be directly used for material classification, and those TB-derived material discriminators are not stable charac-terization parameters. In this article, we analyze the multi-polarization brightness temperature model and propose the equivalent permittivity (EP) to characterize the material infor-mation. This parameter, to some extent, is not affected by inci-dent angle and can be derived by multi-polarization measure-ment. The significant advantage of EP is that it reduces the di-mension of parameters in the model. Therefore, it is conducive to extracting object information based on the MMW radiation model. As an application example, we used EP in this article for object classification. Based on EP, we successfully classified four objects with an accuracy of about 99%. Future applications of our method include liquid analysis and scene monitoring.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114552654","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/IWS55252.2022.9977453
Xiangdong Xie, Xuefeng Jiang, Chao Zhang
With the fast development of the internet, the requirements for communication quality continue to increase. Accordingly, spectrum resources become scarce. The Orbital Angular Momentum (OAM) has been widely researched in recent years and can be used for communication. OAM is a physical quantity different from electric field strength. Quantum OAM reflects the new physical dimension of OAM. Using quantum OAM for communication, Ultra Narrow Band (UNB) transmission can be realized on the spectrum. In the UNB system with OAM, phase synchronization is the key part. This paper proposes a method to implement the UNB system with phase synchronization. The simulation results are given to verify the effectiveness.
{"title":"Phase Synchronization in Ultra Narrow Band Transmission With Orbital Angular Momentum Microwave","authors":"Xiangdong Xie, Xuefeng Jiang, Chao Zhang","doi":"10.1109/IWS55252.2022.9977453","DOIUrl":"https://doi.org/10.1109/IWS55252.2022.9977453","url":null,"abstract":"With the fast development of the internet, the requirements for communication quality continue to increase. Accordingly, spectrum resources become scarce. The Orbital Angular Momentum (OAM) has been widely researched in recent years and can be used for communication. OAM is a physical quantity different from electric field strength. Quantum OAM reflects the new physical dimension of OAM. Using quantum OAM for communication, Ultra Narrow Band (UNB) transmission can be realized on the spectrum. In the UNB system with OAM, phase synchronization is the key part. This paper proposes a method to implement the UNB system with phase synchronization. The simulation results are given to verify the effectiveness.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114761391","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/IWS55252.2022.9977515
Xiaocheng Wang, G. Xiao, Hao Cheng
A broadband D-band cavity-backed coupled-feed patch antenna in wafer level package is proposed. Benefiting from the thicker dielectric substrate and the coupled feed method, the patch antenna can achieve a broadband performance with a relative bandwidth of 25.8%. The influence of surface wave caused by the thicker dielectric substrate on the radiation performance of antenna can be partially reduced using metal backed cavity. Therefore, the antenna can obtain a high gain around 7 dBi with low sidelobe. For the D-band long distance high-speed communications, the 2×4 array is formed by the proposed antenna to obtain the higher gain of around 12.7 dBi. In addition, the designed antenna can adopt wafer-level package on Benzocyclobutene (BCB) process, and the BCB material is used as the substrate and interconnection layer to achieve low-loss interconnection with the RF chip through transmission line and vias.
{"title":"A Broadband D-Band Cavity-Backed Coupled-Feed Patch Antenna in Wafer Level Package","authors":"Xiaocheng Wang, G. Xiao, Hao Cheng","doi":"10.1109/IWS55252.2022.9977515","DOIUrl":"https://doi.org/10.1109/IWS55252.2022.9977515","url":null,"abstract":"A broadband D-band cavity-backed coupled-feed patch antenna in wafer level package is proposed. Benefiting from the thicker dielectric substrate and the coupled feed method, the patch antenna can achieve a broadband performance with a relative bandwidth of 25.8%. The influence of surface wave caused by the thicker dielectric substrate on the radiation performance of antenna can be partially reduced using metal backed cavity. Therefore, the antenna can obtain a high gain around 7 dBi with low sidelobe. For the D-band long distance high-speed communications, the 2×4 array is formed by the proposed antenna to obtain the higher gain of around 12.7 dBi. In addition, the designed antenna can adopt wafer-level package on Benzocyclobutene (BCB) process, and the BCB material is used as the substrate and interconnection layer to achieve low-loss interconnection with the RF chip through transmission line and vias.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"369 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115894276","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/IWS55252.2022.9977846
Fan Zhang, Wen Wang, Hui Xu, Aixin Chen, Donglin Su
With the rapid development of electronic technology in recent years, the application of electronic equipment or electronic system becomes more and more common, and these equipment or system produce a large number of intentional or unintentional electromagnetic emissions when they are working. In order to check the electromagnetic emission to avoid the impact on the surrounding electronic equipment or electronic system, the need of emitter identification arises, especially in the field of electromagnetic compatibility(EMC). This paper proposes a systematic radiation emitter identification approach. This approach divides the radiated emission data of equipment or system into three different kinds of components and the radiated emission data is classified according to the similarity of the three components. Three different kinds of electronic equipment radiation emission data are used to verify the proposed method. The classification accuracy for small samples of radiation emission data is 100%, which confirms the effectiveness of this method.
{"title":"Interference Emission Sources Identification Approach Based on Basic Emission Waveform Theory","authors":"Fan Zhang, Wen Wang, Hui Xu, Aixin Chen, Donglin Su","doi":"10.1109/IWS55252.2022.9977846","DOIUrl":"https://doi.org/10.1109/IWS55252.2022.9977846","url":null,"abstract":"With the rapid development of electronic technology in recent years, the application of electronic equipment or electronic system becomes more and more common, and these equipment or system produce a large number of intentional or unintentional electromagnetic emissions when they are working. In order to check the electromagnetic emission to avoid the impact on the surrounding electronic equipment or electronic system, the need of emitter identification arises, especially in the field of electromagnetic compatibility(EMC). This paper proposes a systematic radiation emitter identification approach. This approach divides the radiated emission data of equipment or system into three different kinds of components and the radiated emission data is classified according to the similarity of the three components. Three different kinds of electronic equipment radiation emission data are used to verify the proposed method. The classification accuracy for small samples of radiation emission data is 100%, which confirms the effectiveness of this method.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"307 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115935682","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/IWS55252.2022.9977451
Chun Yang, Xiaojie Xu, Haiyan Lu, Jixin Chen, Debin Hou
A broadband E-band driver amplifier fabricated in 0.1 μm GaAs pHEMT technology is proposed in this paper. The amplifier is composed of three common-source stages. To realize the wide bandwidth, high order matching networks are utilized, and the center frequency of each stage is separated. Measure-ments show a peak small-signal gain of 18.3 dB at 66 GHz with a relative 3-dB bandwidth of 42.5% (61–94 GHz). The saturated output power is greater than 15 dBm in the 3-dB bandwidth frequency range with a peak of 18.7 dBm at 75 GHz. The amplifier draws a 152 mA current with a supply voltage of 4 V and the size is 1.1x0.8 mm2 including pads. The results show that the pro-posed driver amplifier achieves competitive gain and remarkable bandwidth in E-band.
{"title":"A Broadband E-band Driver Amplifier in 0.1 μm GaAs pHEMT Technology","authors":"Chun Yang, Xiaojie Xu, Haiyan Lu, Jixin Chen, Debin Hou","doi":"10.1109/IWS55252.2022.9977451","DOIUrl":"https://doi.org/10.1109/IWS55252.2022.9977451","url":null,"abstract":"A broadband E-band driver amplifier fabricated in 0.1 μm GaAs pHEMT technology is proposed in this paper. The amplifier is composed of three common-source stages. To realize the wide bandwidth, high order matching networks are utilized, and the center frequency of each stage is separated. Measure-ments show a peak small-signal gain of 18.3 dB at 66 GHz with a relative 3-dB bandwidth of 42.5% (61–94 GHz). The saturated output power is greater than 15 dBm in the 3-dB bandwidth frequency range with a peak of 18.7 dBm at 75 GHz. The amplifier draws a 152 mA current with a supply voltage of 4 V and the size is 1.1x0.8 mm2 including pads. The results show that the pro-posed driver amplifier achieves competitive gain and remarkable bandwidth in E-band.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121732881","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
This paper presents a design approach for Ka-band low noise amplifier (LNA) with both high gain and wide bandwidth. With a five-stage cascode structure, emitter degeneration is used in the first stage to implement the simultaneous power and noise matching and positive-feedback network is adopted to enhance the gain in the next four stages. By using stagger tuning technique, wide bandwidth can be achieved. For demonstration, a Ka-band LNA is designed and fabricated in a 0.18 $boldsymbol{mu}mathbf{m} mathbf{SiGe}$ BiCMOS process. It achieves a 3-dB bandwidth from 31.6 GHz to 38.2 GHz with a maximum gain of 42.9 dB. The circuit operates from a 2.5 V supply with a DC power consumption of 60 mW.
{"title":"A Ka-band High Gain Wideband Low Noise Amplifier in $.18-mu mathrm{m} text{SiGe}$ BiCMOS","authors":"Zhan Chen, Chun-Xia Zhou, Guoxiao Cheng, Jiankang Li, Wen Wu","doi":"10.1109/IWS55252.2022.9977672","DOIUrl":"https://doi.org/10.1109/IWS55252.2022.9977672","url":null,"abstract":"This paper presents a design approach for Ka-band low noise amplifier (LNA) with both high gain and wide bandwidth. With a five-stage cascode structure, emitter degeneration is used in the first stage to implement the simultaneous power and noise matching and positive-feedback network is adopted to enhance the gain in the next four stages. By using stagger tuning technique, wide bandwidth can be achieved. For demonstration, a Ka-band LNA is designed and fabricated in a 0.18 $boldsymbol{mu}mathbf{m} mathbf{SiGe}$ BiCMOS process. It achieves a 3-dB bandwidth from 31.6 GHz to 38.2 GHz with a maximum gain of 42.9 dB. The circuit operates from a 2.5 V supply with a DC power consumption of 60 mW.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123253909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/IWS55252.2022.9977456
T. Liu, Tingting Wang, Yang Li, Lin-An Yang, J. Ao, Yi Hao
In this paper, a microwave rectifier operating at 905 MHz is proposed based on a patterned GaN Schottky barrier diode (SBD). First, a heavily-doped and patterned GaN SBD demonstrates a low turn-on voltage of 0.38 V at 1mA, low series resistance of 1.5Ω, suitable zero-biased junction capacitance of 0.93 pF, and a breakdown voltage of 52 V, which is specially proposed for mid- and low-power microwave rectification around 905 MHz. Then by combining circuits techniques such as harmonic harvesting and impedance cancelation, a GaN based microwave rectifier that pursuing the highest efficiency is designed. The measurement shows that over 92% RF-DC conversion efficiency is achieved, while the high-efficiency power range(efficiency>80%) is extended to 16.5 dBm - 25 dBm, which indicate a great potential at the sensorial such as long-distance wireless power transmission and the internet of things.
{"title":"Ultra-High Efficiency Microwave Rectifier Based on Patterned GaN Schottky Barrier Diode","authors":"T. Liu, Tingting Wang, Yang Li, Lin-An Yang, J. Ao, Yi Hao","doi":"10.1109/IWS55252.2022.9977456","DOIUrl":"https://doi.org/10.1109/IWS55252.2022.9977456","url":null,"abstract":"In this paper, a microwave rectifier operating at 905 MHz is proposed based on a patterned GaN Schottky barrier diode (SBD). First, a heavily-doped and patterned GaN SBD demonstrates a low turn-on voltage of 0.38 V at 1mA, low series resistance of 1.5Ω, suitable zero-biased junction capacitance of 0.93 pF, and a breakdown voltage of 52 V, which is specially proposed for mid- and low-power microwave rectification around 905 MHz. Then by combining circuits techniques such as harmonic harvesting and impedance cancelation, a GaN based microwave rectifier that pursuing the highest efficiency is designed. The measurement shows that over 92% RF-DC conversion efficiency is achieved, while the high-efficiency power range(efficiency>80%) is extended to 16.5 dBm - 25 dBm, which indicate a great potential at the sensorial such as long-distance wireless power transmission and the internet of things.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124485327","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2022-08-12DOI: 10.1109/IWS55252.2022.9977636
Lien-Sheng Wei, Wanchen Yang, W. Che, Q. Xue, Kun Tang
This manuscript presents a millimeter-wave phased array with the merits of high isolation, low active $mathrm{S}$ parameters and wide-angle scanning. Firstly, overlapped metasurface structure is proposed to construct a very miniaturized broadband antenna element with the size of only $0.17lambda_{0}$. Then, the newly designed element is placed with a small distance of about $0.4lambda_{0}$ for implementing $1times 4$ wide-angle scanning phased array. Benefit from the small size of the elements, there are enough space to load decoupling structure for ensuring high isolation. The results show that the array can cover the 5G band from 24.25 to 29.5 GHz with a relative bandwidth of 19.53%, and the isolation between adjacent elements is basically higher than 20dB. Moreover, it can achieve a large scanning range of -61° ~61° in low band and -55°~55° in high band respectively, meanwhile, all the active S parameters can keep lower than -8.4dB for ensuring scanning efficiency. These results reveal that the proposed array would be potentially applied in 5G millimeter-wave communication.
{"title":"High-isolation Millimeter-wave Wide-angle Scanning Phased Array U sing Overlapped Metasurface Structure","authors":"Lien-Sheng Wei, Wanchen Yang, W. Che, Q. Xue, Kun Tang","doi":"10.1109/IWS55252.2022.9977636","DOIUrl":"https://doi.org/10.1109/IWS55252.2022.9977636","url":null,"abstract":"This manuscript presents a millimeter-wave phased array with the merits of high isolation, low active $mathrm{S}$ parameters and wide-angle scanning. Firstly, overlapped metasurface structure is proposed to construct a very miniaturized broadband antenna element with the size of only $0.17lambda_{0}$. Then, the newly designed element is placed with a small distance of about $0.4lambda_{0}$ for implementing $1times 4$ wide-angle scanning phased array. Benefit from the small size of the elements, there are enough space to load decoupling structure for ensuring high isolation. The results show that the array can cover the 5G band from 24.25 to 29.5 GHz with a relative bandwidth of 19.53%, and the isolation between adjacent elements is basically higher than 20dB. Moreover, it can achieve a large scanning range of -61° ~61° in low band and -55°~55° in high band respectively, meanwhile, all the active S parameters can keep lower than -8.4dB for ensuring scanning efficiency. These results reveal that the proposed array would be potentially applied in 5G millimeter-wave communication.","PeriodicalId":126964,"journal":{"name":"2022 IEEE MTT-S International Wireless Symposium (IWS)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2022-08-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121122959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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