Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543361
Hsuan-Lun Kuo, Chih-Wen Lu, Shuw-Guann Lin, D. Chang
This paper presents a 10-bit 10 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) in 180 nm technology. We propose a new structure of the charge redistribution digital-to-analog converter (DAC) for the SAR ADC to reduce the area cost and power consumption and to promote the bandwidth. This structure does not only reduce the area of capacitors array and the capacitance of the DAC, but also guarantee the process variation of capacitors.
{"title":"A 10-bit 10 MS/s SAR ADC with the reduced capacitance DAC","authors":"Hsuan-Lun Kuo, Chih-Wen Lu, Shuw-Guann Lin, D. Chang","doi":"10.1109/ISNE.2016.7543361","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543361","url":null,"abstract":"This paper presents a 10-bit 10 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) in 180 nm technology. We propose a new structure of the charge redistribution digital-to-analog converter (DAC) for the SAR ADC to reduce the area cost and power consumption and to promote the bandwidth. This structure does not only reduce the area of capacitors array and the capacitance of the DAC, but also guarantee the process variation of capacitors.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122118381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543379
Yanni Chen, Guangcheng Ding, Shih‐Kun Liu
A low phase noise, low cost microwave voltage-controlled oscillator (VCO) based on Hartley configuration is presented. The proposed oscillator is realized on FR4 substrate and is demonstrated at 8.325 GHz with -111 dBc/Hz phase noise measured at 1-MHz offset frequency.
{"title":"A 8.33 GHz microwave voltage-controlled oscillator","authors":"Yanni Chen, Guangcheng Ding, Shih‐Kun Liu","doi":"10.1109/ISNE.2016.7543379","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543379","url":null,"abstract":"A low phase noise, low cost microwave voltage-controlled oscillator (VCO) based on Hartley configuration is presented. The proposed oscillator is realized on FR4 substrate and is demonstrated at 8.325 GHz with -111 dBc/Hz phase noise measured at 1-MHz offset frequency.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129107433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543284
Xinhong Hong, L. Pan, Haozhi Ma, Dong Wu, Jun Xu
In this work, optimized signal transmission schemes are proposed to improve the signal transmission speed and area efficiency of high density embedded DRAM (eDRAM). As in the schemes, overdrive scheme is adopted to enhance the drive capability of read word-line (RWL) inverters and reduce inverters area overhead, optimized signal transmission path scheme is proposed to reduce signal transmission loading, and a Vth loss compensation and signal path pre-charge technology are also adopted to improve the data access speed. The proposed schemes are implemented in 1Mb eDRAM on 65nm CMOS technology node. Calculation and simulation results present 20% area reduction on RWL pull-down inverters and 10% data access speed improvement.
{"title":"Optimized signal transmission schemes for high density eDRAM","authors":"Xinhong Hong, L. Pan, Haozhi Ma, Dong Wu, Jun Xu","doi":"10.1109/ISNE.2016.7543284","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543284","url":null,"abstract":"In this work, optimized signal transmission schemes are proposed to improve the signal transmission speed and area efficiency of high density embedded DRAM (eDRAM). As in the schemes, overdrive scheme is adopted to enhance the drive capability of read word-line (RWL) inverters and reduce inverters area overhead, optimized signal transmission path scheme is proposed to reduce signal transmission loading, and a Vth loss compensation and signal path pre-charge technology are also adopted to improve the data access speed. The proposed schemes are implemented in 1Mb eDRAM on 65nm CMOS technology node. Calculation and simulation results present 20% area reduction on RWL pull-down inverters and 10% data access speed improvement.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114401484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543339
Shao-Wen Chen, Fang-Chin Liu, Feng-Jiun Kuo, Min-Lun Chai, C. Poh, Jin-Der Lee, Jong-Rong Wang, Hao-Tzu Lin, W. Lin, C. Shih
The one dimensional (1D) and quasi-two dimensional (Q2D) methods were applied to estimate and analyze the thermal resistance of the previous boiling experiments with silicon and copper micro channel wick structures. The variations of temperature and thermal resistance with different heat loads were shown, and the 1D and Q2D methods were used for calculation and comparison with experimental data. The results show that the Q2D method can predict the thermal resistance with a higher accuracy because the spreading resistance is unignorable and should be considered. The present results can be a useful reference for future thermal and cooling designs.
{"title":"Thermal resistance analysis of micro channel structure with 1D and Q2D methods","authors":"Shao-Wen Chen, Fang-Chin Liu, Feng-Jiun Kuo, Min-Lun Chai, C. Poh, Jin-Der Lee, Jong-Rong Wang, Hao-Tzu Lin, W. Lin, C. Shih","doi":"10.1109/ISNE.2016.7543339","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543339","url":null,"abstract":"The one dimensional (1D) and quasi-two dimensional (Q2D) methods were applied to estimate and analyze the thermal resistance of the previous boiling experiments with silicon and copper micro channel wick structures. The variations of temperature and thermal resistance with different heat loads were shown, and the 1D and Q2D methods were used for calculation and comparison with experimental data. The results show that the Q2D method can predict the thermal resistance with a higher accuracy because the spreading resistance is unignorable and should be considered. The present results can be a useful reference for future thermal and cooling designs.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126737386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543299
K. Pey, S. Mei, A. Ranjan, N. Raghavan, K. Shubhakar, R. Thamankar, M. Bosman, S. O’Shea
High resolution transmission electron microscope (HRTEM) is widely used in the study of various RRAM materials system. HRTEM can provide detailed cross sectional characterization of RRAM devices with compositional and structural information at the same time. Recently, scanning probe microscopy (SPM) techniques have also been explored to study oxygen vacancy based RRAM switching with detailed surface, electron energy and tomography information. This paper will introduce the recent RRAM switching studies enabled by advanced physical analysis techniques.
{"title":"Observation of resistive switching by physical analysis techniques","authors":"K. Pey, S. Mei, A. Ranjan, N. Raghavan, K. Shubhakar, R. Thamankar, M. Bosman, S. O’Shea","doi":"10.1109/ISNE.2016.7543299","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543299","url":null,"abstract":"High resolution transmission electron microscope (HRTEM) is widely used in the study of various RRAM materials system. HRTEM can provide detailed cross sectional characterization of RRAM devices with compositional and structural information at the same time. Recently, scanning probe microscopy (SPM) techniques have also been explored to study oxygen vacancy based RRAM switching with detailed surface, electron energy and tomography information. This paper will introduce the recent RRAM switching studies enabled by advanced physical analysis techniques.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133635813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543346
Xuyang Liu, Chunhua Liu, P. Pong
This paper proposes a temperature measurement method using a giant magnetoresistive sensor as a sensing resistor based on Johnson noise thermometry. Experiments were performed to verify this approach. The results demonstrate the reliability of this approach with error less than 2.3% in the temperature range from 303 K to 423 K, which can enable a multifunctional spintronic sensor detecting temperature and magnetic field.
{"title":"A new johnson-noise-based thermometry using giant magnetoresistive sensor","authors":"Xuyang Liu, Chunhua Liu, P. Pong","doi":"10.1109/ISNE.2016.7543346","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543346","url":null,"abstract":"This paper proposes a temperature measurement method using a giant magnetoresistive sensor as a sensing resistor based on Johnson noise thermometry. Experiments were performed to verify this approach. The results demonstrate the reliability of this approach with error less than 2.3% in the temperature range from 303 K to 423 K, which can enable a multifunctional spintronic sensor detecting temperature and magnetic field.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131645964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543337
Hsiao-Wen Yu, Ming-Jye Chen, J. Chen
La0.7Sr0.3MnO3 (LSMO) toroidal inductors sintered at 1300°C for various sintering time have been fabricated for magnetic field sensing. The complex permeability spectra show relaxation character due to domain wall displacement. As the sintering time increases, the permeability increases and the resonance frequency fr decreases. Under applied magnetic field, the permeability decreases and fr increases. Large shift of fr by low fields was observed. The 8 hr sintering sample exhibits a best magnetic field to frequency transfer ratio of 5.13 kHz/G. Our measured results indicate that LSMO is a promising material for the design and fabrication of low-cost magnetic field sensors.
{"title":"La0.7Sr0.3MnO3 toroidal inductor for low magnetic field sensing","authors":"Hsiao-Wen Yu, Ming-Jye Chen, J. Chen","doi":"10.1109/ISNE.2016.7543337","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543337","url":null,"abstract":"La0.7Sr0.3MnO3 (LSMO) toroidal inductors sintered at 1300°C for various sintering time have been fabricated for magnetic field sensing. The complex permeability spectra show relaxation character due to domain wall displacement. As the sintering time increases, the permeability increases and the resonance frequency fr decreases. Under applied magnetic field, the permeability decreases and fr increases. Large shift of fr by low fields was observed. The 8 hr sintering sample exhibits a best magnetic field to frequency transfer ratio of 5.13 kHz/G. Our measured results indicate that LSMO is a promising material for the design and fabrication of low-cost magnetic field sensors.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132927003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543332
Yuan-Jie Yang, Cheng-Ling Lee
This work proposes an air-gap Fiber Fabry-Pérot Interferometer (AG-FFPI) using a hollow core fiber coated with a layer of new polymer, NOA87 for the measurement of relative humidity (RH) and temperature (T). The principle is based on variations of the cavities that are moisture and temperature sensitive to change the interference patterns. Experimental results show that the sensitivities of the RH and T with around 0.3nm/°C and 0.018nm/ %RH can be obtained, respectively.
{"title":"Airgap Fiber Fabry-Pérot Interferometer using a hollow core fiber coated with a layer of photopolymer for measurement of relative humidity and temperature","authors":"Yuan-Jie Yang, Cheng-Ling Lee","doi":"10.1109/ISNE.2016.7543332","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543332","url":null,"abstract":"This work proposes an air-gap Fiber Fabry-Pérot Interferometer (AG-FFPI) using a hollow core fiber coated with a layer of new polymer, NOA87 for the measurement of relative humidity (RH) and temperature (T). The principle is based on variations of the cavities that are moisture and temperature sensitive to change the interference patterns. Experimental results show that the sensitivities of the RH and T with around 0.3nm/°C and 0.018nm/ %RH can be obtained, respectively.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116337880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543376
Shenmin Zhang, Ning Chen, Min Lin
A sub-GHz broadband RF transceiver for wireless sensor network nodes in Internet of Things was designed and implemented in 130nm CMOS process. Several methods like noise cancellation, inverter-based amplifier, 25% duty cycle LO specially for passive current-mode mixer are adopted and combined in the design process. The receiver presents -85dBm sensitivity at a packet error ratio of 1% and transmitter provides emission power up to 12dBm and error vector magnitude better than -30dBc. High data rate of 54Mbps can be measured, which substantially exceeds the common data rate of 100k-2Mbps of most mainstream wireless sensor network nodes.
{"title":"A sub-GHz high data-rate transceiver for wireless sensor network in IoT","authors":"Shenmin Zhang, Ning Chen, Min Lin","doi":"10.1109/ISNE.2016.7543376","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543376","url":null,"abstract":"A sub-GHz broadband RF transceiver for wireless sensor network nodes in Internet of Things was designed and implemented in 130nm CMOS process. Several methods like noise cancellation, inverter-based amplifier, 25% duty cycle LO specially for passive current-mode mixer are adopted and combined in the design process. The receiver presents -85dBm sensitivity at a packet error ratio of 1% and transmitter provides emission power up to 12dBm and error vector magnitude better than -30dBc. High data rate of 54Mbps can be measured, which substantially exceeds the common data rate of 100k-2Mbps of most mainstream wireless sensor network nodes.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114580026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543398
Yu-Sung Liu, Hui-Chi Lin, K. Yang
In this paper, the transmittance of the micro-encapsulated cholesteric liquid crystal was changed by the pump beam. The opto-thermal effect, induced by the PEDOT absorbing layer, results in the variation of the transmittance on the cholesteric liquid crystal thin films. We discussed the possibility of utilizing this material for the application of flexible electronic papers by evaluating the thickness of cholesteric liquid crystal layer and the PEDOT layer, respectively. The results showed that the patterning effect is better for the sample of 12 μm thick cholesteric liquid crystal layer than that of 25 μm at the same excitation conditions and the same thickness of the PEDOT layer. And the patterning effect is better for the sample of 7.5 μm thick PEDOT than that of 5.5 μm at the same excitation conditions and the same thickness of the cholesteric liquid crystal layer. We also successfully achieved a gray-scale pattern on cholesteric liquid crystal using shutter to control the light excitation time. To explore the reason why the cholesteric liquid crystal appeared a transmittance variation when pumped, two experiments were checked: (1) Under the optical field within the pump intensity range of this experiment, the transmittance of cholesteric liquid crystal were irrelevant to the angles between the pump and probe polarizations. (2) As for the opto-thermal effects, a simple heat-conducting model was proposed to fit with the experimental results. The theoretical and experimental results agree well with this model.
{"title":"The opto-thermal effect on the encapsulated cholesteric liquid crystal","authors":"Yu-Sung Liu, Hui-Chi Lin, K. Yang","doi":"10.1109/ISNE.2016.7543398","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543398","url":null,"abstract":"In this paper, the transmittance of the micro-encapsulated cholesteric liquid crystal was changed by the pump beam. The opto-thermal effect, induced by the PEDOT absorbing layer, results in the variation of the transmittance on the cholesteric liquid crystal thin films. We discussed the possibility of utilizing this material for the application of flexible electronic papers by evaluating the thickness of cholesteric liquid crystal layer and the PEDOT layer, respectively. The results showed that the patterning effect is better for the sample of 12 μm thick cholesteric liquid crystal layer than that of 25 μm at the same excitation conditions and the same thickness of the PEDOT layer. And the patterning effect is better for the sample of 7.5 μm thick PEDOT than that of 5.5 μm at the same excitation conditions and the same thickness of the cholesteric liquid crystal layer. We also successfully achieved a gray-scale pattern on cholesteric liquid crystal using shutter to control the light excitation time. To explore the reason why the cholesteric liquid crystal appeared a transmittance variation when pumped, two experiments were checked: (1) Under the optical field within the pump intensity range of this experiment, the transmittance of cholesteric liquid crystal were irrelevant to the angles between the pump and probe polarizations. (2) As for the opto-thermal effects, a simple heat-conducting model was proposed to fit with the experimental results. The theoretical and experimental results agree well with this model.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130654764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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