Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543339
Shao-Wen Chen, Fang-Chin Liu, Feng-Jiun Kuo, Min-Lun Chai, C. Poh, Jin-Der Lee, Jong-Rong Wang, Hao-Tzu Lin, W. Lin, C. Shih
The one dimensional (1D) and quasi-two dimensional (Q2D) methods were applied to estimate and analyze the thermal resistance of the previous boiling experiments with silicon and copper micro channel wick structures. The variations of temperature and thermal resistance with different heat loads were shown, and the 1D and Q2D methods were used for calculation and comparison with experimental data. The results show that the Q2D method can predict the thermal resistance with a higher accuracy because the spreading resistance is unignorable and should be considered. The present results can be a useful reference for future thermal and cooling designs.
{"title":"Thermal resistance analysis of micro channel structure with 1D and Q2D methods","authors":"Shao-Wen Chen, Fang-Chin Liu, Feng-Jiun Kuo, Min-Lun Chai, C. Poh, Jin-Der Lee, Jong-Rong Wang, Hao-Tzu Lin, W. Lin, C. Shih","doi":"10.1109/ISNE.2016.7543339","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543339","url":null,"abstract":"The one dimensional (1D) and quasi-two dimensional (Q2D) methods were applied to estimate and analyze the thermal resistance of the previous boiling experiments with silicon and copper micro channel wick structures. The variations of temperature and thermal resistance with different heat loads were shown, and the 1D and Q2D methods were used for calculation and comparison with experimental data. The results show that the Q2D method can predict the thermal resistance with a higher accuracy because the spreading resistance is unignorable and should be considered. The present results can be a useful reference for future thermal and cooling designs.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126737386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543373
W. Lai, M. Chung
This paper presents the design and experimental results of a continuous-time (CT) sigma-delta (ΣΔ) modulator and low noise amplifier (LNA) with data-weighted average (DWA) technology. A new image-reject low noise amplifier is designed for ECG communication and bio-signal wireless acquisitions. An inter-stage T-structure filter is used in the low noise amplifier design to provide 35-dB image rejection. The DWA technique is used for reducing DAC noise due to component mismatches. Experimental results show the ΣΔ modulator achieves 54-dB dynamic range, 51-dB SNR, and 48-dB SNDR over a 10-MHz signal bandwidth with an oversampling ratio (OSR) of 8, while dissipating 19.8 mW from a 1.2-V supply, which can be used for electroencephalogram (EEG) or electrocardiogram (ECG) signal acquisition systems by wireless sensor and communication. This provided sensor setup CO2 concentration detecting instruments on chip. Oxygen generator will real time to support when sensor monitor and wireless send bio-signal to doctor or health cloud.
{"title":"Integrated continuous-time Sigma-Delta Modulator and low noise amplifier for tracheostomy tube wireless application","authors":"W. Lai, M. Chung","doi":"10.1109/ISNE.2016.7543373","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543373","url":null,"abstract":"This paper presents the design and experimental results of a continuous-time (CT) sigma-delta (ΣΔ) modulator and low noise amplifier (LNA) with data-weighted average (DWA) technology. A new image-reject low noise amplifier is designed for ECG communication and bio-signal wireless acquisitions. An inter-stage T-structure filter is used in the low noise amplifier design to provide 35-dB image rejection. The DWA technique is used for reducing DAC noise due to component mismatches. Experimental results show the ΣΔ modulator achieves 54-dB dynamic range, 51-dB SNR, and 48-dB SNDR over a 10-MHz signal bandwidth with an oversampling ratio (OSR) of 8, while dissipating 19.8 mW from a 1.2-V supply, which can be used for electroencephalogram (EEG) or electrocardiogram (ECG) signal acquisition systems by wireless sensor and communication. This provided sensor setup CO2 concentration detecting instruments on chip. Oxygen generator will real time to support when sensor monitor and wireless send bio-signal to doctor or health cloud.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122681836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543284
Xinhong Hong, L. Pan, Haozhi Ma, Dong Wu, Jun Xu
In this work, optimized signal transmission schemes are proposed to improve the signal transmission speed and area efficiency of high density embedded DRAM (eDRAM). As in the schemes, overdrive scheme is adopted to enhance the drive capability of read word-line (RWL) inverters and reduce inverters area overhead, optimized signal transmission path scheme is proposed to reduce signal transmission loading, and a Vth loss compensation and signal path pre-charge technology are also adopted to improve the data access speed. The proposed schemes are implemented in 1Mb eDRAM on 65nm CMOS technology node. Calculation and simulation results present 20% area reduction on RWL pull-down inverters and 10% data access speed improvement.
{"title":"Optimized signal transmission schemes for high density eDRAM","authors":"Xinhong Hong, L. Pan, Haozhi Ma, Dong Wu, Jun Xu","doi":"10.1109/ISNE.2016.7543284","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543284","url":null,"abstract":"In this work, optimized signal transmission schemes are proposed to improve the signal transmission speed and area efficiency of high density embedded DRAM (eDRAM). As in the schemes, overdrive scheme is adopted to enhance the drive capability of read word-line (RWL) inverters and reduce inverters area overhead, optimized signal transmission path scheme is proposed to reduce signal transmission loading, and a Vth loss compensation and signal path pre-charge technology are also adopted to improve the data access speed. The proposed schemes are implemented in 1Mb eDRAM on 65nm CMOS technology node. Calculation and simulation results present 20% area reduction on RWL pull-down inverters and 10% data access speed improvement.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114401484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543379
Yanni Chen, Guangcheng Ding, Shih‐Kun Liu
A low phase noise, low cost microwave voltage-controlled oscillator (VCO) based on Hartley configuration is presented. The proposed oscillator is realized on FR4 substrate and is demonstrated at 8.325 GHz with -111 dBc/Hz phase noise measured at 1-MHz offset frequency.
{"title":"A 8.33 GHz microwave voltage-controlled oscillator","authors":"Yanni Chen, Guangcheng Ding, Shih‐Kun Liu","doi":"10.1109/ISNE.2016.7543379","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543379","url":null,"abstract":"A low phase noise, low cost microwave voltage-controlled oscillator (VCO) based on Hartley configuration is presented. The proposed oscillator is realized on FR4 substrate and is demonstrated at 8.325 GHz with -111 dBc/Hz phase noise measured at 1-MHz offset frequency.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129107433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543299
K. Pey, S. Mei, A. Ranjan, N. Raghavan, K. Shubhakar, R. Thamankar, M. Bosman, S. O’Shea
High resolution transmission electron microscope (HRTEM) is widely used in the study of various RRAM materials system. HRTEM can provide detailed cross sectional characterization of RRAM devices with compositional and structural information at the same time. Recently, scanning probe microscopy (SPM) techniques have also been explored to study oxygen vacancy based RRAM switching with detailed surface, electron energy and tomography information. This paper will introduce the recent RRAM switching studies enabled by advanced physical analysis techniques.
{"title":"Observation of resistive switching by physical analysis techniques","authors":"K. Pey, S. Mei, A. Ranjan, N. Raghavan, K. Shubhakar, R. Thamankar, M. Bosman, S. O’Shea","doi":"10.1109/ISNE.2016.7543299","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543299","url":null,"abstract":"High resolution transmission electron microscope (HRTEM) is widely used in the study of various RRAM materials system. HRTEM can provide detailed cross sectional characterization of RRAM devices with compositional and structural information at the same time. Recently, scanning probe microscopy (SPM) techniques have also been explored to study oxygen vacancy based RRAM switching with detailed surface, electron energy and tomography information. This paper will introduce the recent RRAM switching studies enabled by advanced physical analysis techniques.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133635813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543337
Hsiao-Wen Yu, Ming-Jye Chen, J. Chen
La0.7Sr0.3MnO3 (LSMO) toroidal inductors sintered at 1300°C for various sintering time have been fabricated for magnetic field sensing. The complex permeability spectra show relaxation character due to domain wall displacement. As the sintering time increases, the permeability increases and the resonance frequency fr decreases. Under applied magnetic field, the permeability decreases and fr increases. Large shift of fr by low fields was observed. The 8 hr sintering sample exhibits a best magnetic field to frequency transfer ratio of 5.13 kHz/G. Our measured results indicate that LSMO is a promising material for the design and fabrication of low-cost magnetic field sensors.
{"title":"La0.7Sr0.3MnO3 toroidal inductor for low magnetic field sensing","authors":"Hsiao-Wen Yu, Ming-Jye Chen, J. Chen","doi":"10.1109/ISNE.2016.7543337","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543337","url":null,"abstract":"La0.7Sr0.3MnO3 (LSMO) toroidal inductors sintered at 1300°C for various sintering time have been fabricated for magnetic field sensing. The complex permeability spectra show relaxation character due to domain wall displacement. As the sintering time increases, the permeability increases and the resonance frequency fr decreases. Under applied magnetic field, the permeability decreases and fr increases. Large shift of fr by low fields was observed. The 8 hr sintering sample exhibits a best magnetic field to frequency transfer ratio of 5.13 kHz/G. Our measured results indicate that LSMO is a promising material for the design and fabrication of low-cost magnetic field sensors.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132927003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543346
Xuyang Liu, Chunhua Liu, P. Pong
This paper proposes a temperature measurement method using a giant magnetoresistive sensor as a sensing resistor based on Johnson noise thermometry. Experiments were performed to verify this approach. The results demonstrate the reliability of this approach with error less than 2.3% in the temperature range from 303 K to 423 K, which can enable a multifunctional spintronic sensor detecting temperature and magnetic field.
{"title":"A new johnson-noise-based thermometry using giant magnetoresistive sensor","authors":"Xuyang Liu, Chunhua Liu, P. Pong","doi":"10.1109/ISNE.2016.7543346","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543346","url":null,"abstract":"This paper proposes a temperature measurement method using a giant magnetoresistive sensor as a sensing resistor based on Johnson noise thermometry. Experiments were performed to verify this approach. The results demonstrate the reliability of this approach with error less than 2.3% in the temperature range from 303 K to 423 K, which can enable a multifunctional spintronic sensor detecting temperature and magnetic field.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131645964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543355
Yen-Long Lee, Soon-Jyh Chang
This paper presents a 6 Gb/s low-power half-rate equalizer. Compared with the current steering summation circuits, the proposed charge-average switched-capacitor equalizer achieves good energy and area efficiency, and thus is suitable for multi-lane applications. The proposed architecture are majorly constructed by switched-capacitor and digital circuitries, it is hence suitable for advanced manufacturing process. The proof-of-concept prototype was fabricated in TSMC 0.18 um CMOS technology. It occupies 0.0034 mm2 area and the figure of merit is 10 fJ/bit/dB while operating at a bit-error-rate <; 10-12 for 6 Gb/s data passed over a 100 cm FR4 PCB channel with 23.2 dB channel loss at 3 GHz.
本文提出了一种6gb /s低功耗半速率均衡器。与现有的转向求和电路相比，所提出的电荷平均开关电容均衡器具有良好的能量效率和面积效率，适合多车道应用。该结构主要由开关电容和数字电路构成，因此适合于先进的制造工艺。概念验证原型采用台积电0.18 um CMOS技术制造。它占地0.0034 mm2，在误码率<;10-12为6gb /s的数据通过100厘米的FR4 PCB通道，在3ghz下通道损耗为23.2 dB。
{"title":"A 10-fJ/bit/dB half-rate equalizer with charge-average switched-capacitor summation technique","authors":"Yen-Long Lee, Soon-Jyh Chang","doi":"10.1109/ISNE.2016.7543355","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543355","url":null,"abstract":"This paper presents a 6 Gb/s low-power half-rate equalizer. Compared with the current steering summation circuits, the proposed charge-average switched-capacitor equalizer achieves good energy and area efficiency, and thus is suitable for multi-lane applications. The proposed architecture are majorly constructed by switched-capacitor and digital circuitries, it is hence suitable for advanced manufacturing process. The proof-of-concept prototype was fabricated in TSMC 0.18 um CMOS technology. It occupies 0.0034 mm2 area and the figure of merit is 10 fJ/bit/dB while operating at a bit-error-rate <; 10-12 for 6 Gb/s data passed over a 100 cm FR4 PCB channel with 23.2 dB channel loss at 3 GHz.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128813708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543309
Wei-Chieh Chen, Li-Hsing Chen, Yan-Ting Lin, Hao-Hsiung Lin
III-V nanowire (NW) integrates with (001) Si substrate is a promising issue due to its potential in developing future IC technology. In this study, we develop a two-step growth method which can effectively control the NW in single growth direction. TEM analysis has been used to study the NW growth mechanism.
{"title":"Structural properties of InAs nanowires on (001) Si","authors":"Wei-Chieh Chen, Li-Hsing Chen, Yan-Ting Lin, Hao-Hsiung Lin","doi":"10.1109/ISNE.2016.7543309","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543309","url":null,"abstract":"III-V nanowire (NW) integrates with (001) Si substrate is a promising issue due to its potential in developing future IC technology. In this study, we develop a two-step growth method which can effectively control the NW in single growth direction. TEM analysis has been used to study the NW growth mechanism.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123372015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543376
Shenmin Zhang, Ning Chen, Min Lin
A sub-GHz broadband RF transceiver for wireless sensor network nodes in Internet of Things was designed and implemented in 130nm CMOS process. Several methods like noise cancellation, inverter-based amplifier, 25% duty cycle LO specially for passive current-mode mixer are adopted and combined in the design process. The receiver presents -85dBm sensitivity at a packet error ratio of 1% and transmitter provides emission power up to 12dBm and error vector magnitude better than -30dBc. High data rate of 54Mbps can be measured, which substantially exceeds the common data rate of 100k-2Mbps of most mainstream wireless sensor network nodes.
{"title":"A sub-GHz high data-rate transceiver for wireless sensor network in IoT","authors":"Shenmin Zhang, Ning Chen, Min Lin","doi":"10.1109/ISNE.2016.7543376","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543376","url":null,"abstract":"A sub-GHz broadband RF transceiver for wireless sensor network nodes in Internet of Things was designed and implemented in 130nm CMOS process. Several methods like noise cancellation, inverter-based amplifier, 25% duty cycle LO specially for passive current-mode mixer are adopted and combined in the design process. The receiver presents -85dBm sensitivity at a packet error ratio of 1% and transmitter provides emission power up to 12dBm and error vector magnitude better than -30dBc. High data rate of 54Mbps can be measured, which substantially exceeds the common data rate of 100k-2Mbps of most mainstream wireless sensor network nodes.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114580026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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