首页 > 最新文献

2016 5th International Symposium on Next-Generation Electronics (ISNE)最新文献

英文 中文
A 10-bit 10 MS/s SAR ADC with the reduced capacitance DAC 一个10位10ms /s SAR ADC与减小电容DAC
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543361
Hsuan-Lun Kuo, Chih-Wen Lu, Shuw-Guann Lin, D. Chang
This paper presents a 10-bit 10 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) in 180 nm technology. We propose a new structure of the charge redistribution digital-to-analog converter (DAC) for the SAR ADC to reduce the area cost and power consumption and to promote the bandwidth. This structure does not only reduce the area of capacitors array and the capacitance of the DAC, but also guarantee the process variation of capacitors.
提出了一种采用180纳米技术的10位10 MS/s逐次逼近寄存器(SAR)模数转换器(ADC)。本文提出了一种用于SAR ADC的电荷再分配数模转换器(DAC)的新结构,以降低面积成本和功耗,并提高带宽。这种结构不仅减少了电容器阵列的面积和DAC的电容,而且保证了电容器的工艺变化。
{"title":"A 10-bit 10 MS/s SAR ADC with the reduced capacitance DAC","authors":"Hsuan-Lun Kuo, Chih-Wen Lu, Shuw-Guann Lin, D. Chang","doi":"10.1109/ISNE.2016.7543361","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543361","url":null,"abstract":"This paper presents a 10-bit 10 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) in 180 nm technology. We propose a new structure of the charge redistribution digital-to-analog converter (DAC) for the SAR ADC to reduce the area cost and power consumption and to promote the bandwidth. This structure does not only reduce the area of capacitors array and the capacitance of the DAC, but also guarantee the process variation of capacitors.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122118381","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
A 8.33 GHz microwave voltage-controlled oscillator 8.33 GHz微波压控振荡器
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543379
Yanni Chen, Guangcheng Ding, Shih‐Kun Liu
A low phase noise, low cost microwave voltage-controlled oscillator (VCO) based on Hartley configuration is presented. The proposed oscillator is realized on FR4 substrate and is demonstrated at 8.325 GHz with -111 dBc/Hz phase noise measured at 1-MHz offset frequency.
提出了一种基于哈特利结构的低相位噪声、低成本微波压控振荡器(VCO)。所提出的振荡器在FR4衬底上实现,并在8.325 GHz下进行了演示,在1 mhz偏移频率下测量了-111 dBc/Hz相位噪声。
{"title":"A 8.33 GHz microwave voltage-controlled oscillator","authors":"Yanni Chen, Guangcheng Ding, Shih‐Kun Liu","doi":"10.1109/ISNE.2016.7543379","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543379","url":null,"abstract":"A low phase noise, low cost microwave voltage-controlled oscillator (VCO) based on Hartley configuration is presented. The proposed oscillator is realized on FR4 substrate and is demonstrated at 8.325 GHz with -111 dBc/Hz phase noise measured at 1-MHz offset frequency.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129107433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Optimized signal transmission schemes for high density eDRAM 优化了高密度eDRAM的信号传输方案
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543284
Xinhong Hong, L. Pan, Haozhi Ma, Dong Wu, Jun Xu
In this work, optimized signal transmission schemes are proposed to improve the signal transmission speed and area efficiency of high density embedded DRAM (eDRAM). As in the schemes, overdrive scheme is adopted to enhance the drive capability of read word-line (RWL) inverters and reduce inverters area overhead, optimized signal transmission path scheme is proposed to reduce signal transmission loading, and a Vth loss compensation and signal path pre-charge technology are also adopted to improve the data access speed. The proposed schemes are implemented in 1Mb eDRAM on 65nm CMOS technology node. Calculation and simulation results present 20% area reduction on RWL pull-down inverters and 10% data access speed improvement.
为了提高高密度嵌入式DRAM (eDRAM)的信号传输速度和面积效率,本文提出了优化的信号传输方案。在方案中,采用了超速方案来提高RWL逆变器的驱动能力,减少逆变器面积开销,提出了优化信号传输路径方案来减少信号传输负载,并采用了Vth损耗补偿和信号路径预充电技术来提高数据访问速度。所提出的方案在65nm CMOS技术节点上的1Mb eDRAM上实现。计算和仿真结果表明,RWL下拉逆变器面积减小20%,数据存取速度提高10%。
{"title":"Optimized signal transmission schemes for high density eDRAM","authors":"Xinhong Hong, L. Pan, Haozhi Ma, Dong Wu, Jun Xu","doi":"10.1109/ISNE.2016.7543284","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543284","url":null,"abstract":"In this work, optimized signal transmission schemes are proposed to improve the signal transmission speed and area efficiency of high density embedded DRAM (eDRAM). As in the schemes, overdrive scheme is adopted to enhance the drive capability of read word-line (RWL) inverters and reduce inverters area overhead, optimized signal transmission path scheme is proposed to reduce signal transmission loading, and a Vth loss compensation and signal path pre-charge technology are also adopted to improve the data access speed. The proposed schemes are implemented in 1Mb eDRAM on 65nm CMOS technology node. Calculation and simulation results present 20% area reduction on RWL pull-down inverters and 10% data access speed improvement.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114401484","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal resistance analysis of micro channel structure with 1D and Q2D methods
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543339
Shao-Wen Chen, Fang-Chin Liu, Feng-Jiun Kuo, Min-Lun Chai, C. Poh, Jin-Der Lee, Jong-Rong Wang, Hao-Tzu Lin, W. Lin, C. Shih
The one dimensional (1D) and quasi-two dimensional (Q2D) methods were applied to estimate and analyze the thermal resistance of the previous boiling experiments with silicon and copper micro channel wick structures. The variations of temperature and thermal resistance with different heat loads were shown, and the 1D and Q2D methods were used for calculation and comparison with experimental data. The results show that the Q2D method can predict the thermal resistance with a higher accuracy because the spreading resistance is unignorable and should be considered. The present results can be a useful reference for future thermal and cooling designs.
采用一维(1D)和准二维(Q2D)方法对硅和铜微通道芯结构的热阻进行了预估和分析。给出了不同热负荷下温度和热阻的变化规律,采用1D和Q2D方法进行了计算,并与实验数据进行了对比。结果表明,由于扩展电阻不可忽略,需要考虑扩展电阻的影响,Q2D方法能够以较高的精度预测热阻。本研究结果可为今后的热、冷设计提供有益的参考。
{"title":"Thermal resistance analysis of micro channel structure with 1D and Q2D methods","authors":"Shao-Wen Chen, Fang-Chin Liu, Feng-Jiun Kuo, Min-Lun Chai, C. Poh, Jin-Der Lee, Jong-Rong Wang, Hao-Tzu Lin, W. Lin, C. Shih","doi":"10.1109/ISNE.2016.7543339","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543339","url":null,"abstract":"The one dimensional (1D) and quasi-two dimensional (Q2D) methods were applied to estimate and analyze the thermal resistance of the previous boiling experiments with silicon and copper micro channel wick structures. The variations of temperature and thermal resistance with different heat loads were shown, and the 1D and Q2D methods were used for calculation and comparison with experimental data. The results show that the Q2D method can predict the thermal resistance with a higher accuracy because the spreading resistance is unignorable and should be considered. The present results can be a useful reference for future thermal and cooling designs.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126737386","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Observation of resistive switching by physical analysis techniques 用物理分析技术观察电阻开关
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543299
K. Pey, S. Mei, A. Ranjan, N. Raghavan, K. Shubhakar, R. Thamankar, M. Bosman, S. O’Shea
High resolution transmission electron microscope (HRTEM) is widely used in the study of various RRAM materials system. HRTEM can provide detailed cross sectional characterization of RRAM devices with compositional and structural information at the same time. Recently, scanning probe microscopy (SPM) techniques have also been explored to study oxygen vacancy based RRAM switching with detailed surface, electron energy and tomography information. This paper will introduce the recent RRAM switching studies enabled by advanced physical analysis techniques.
高分辨率透射电子显微镜(HRTEM)广泛应用于各种RRAM材料体系的研究。HRTEM可以提供RRAM器件的详细截面表征,同时提供成分和结构信息。最近,扫描探针显微镜(SPM)技术也被用于研究基于氧空位的RRAM开关,该开关具有详细的表面、电子能量和断层扫描信息。本文将介绍最新的RRAM开关的研究,使先进的物理分析技术。
{"title":"Observation of resistive switching by physical analysis techniques","authors":"K. Pey, S. Mei, A. Ranjan, N. Raghavan, K. Shubhakar, R. Thamankar, M. Bosman, S. O’Shea","doi":"10.1109/ISNE.2016.7543299","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543299","url":null,"abstract":"High resolution transmission electron microscope (HRTEM) is widely used in the study of various RRAM materials system. HRTEM can provide detailed cross sectional characterization of RRAM devices with compositional and structural information at the same time. Recently, scanning probe microscopy (SPM) techniques have also been explored to study oxygen vacancy based RRAM switching with detailed surface, electron energy and tomography information. This paper will introduce the recent RRAM switching studies enabled by advanced physical analysis techniques.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"86 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133635813","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A new johnson-noise-based thermometry using giant magnetoresistive sensor 一种新的基于约翰逊噪声的巨磁阻传感器测温方法
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543346
Xuyang Liu, Chunhua Liu, P. Pong
This paper proposes a temperature measurement method using a giant magnetoresistive sensor as a sensing resistor based on Johnson noise thermometry. Experiments were performed to verify this approach. The results demonstrate the reliability of this approach with error less than 2.3% in the temperature range from 303 K to 423 K, which can enable a multifunctional spintronic sensor detecting temperature and magnetic field.
提出了一种基于约翰逊噪声测温的巨磁阻传感器作为感测电阻的测温方法。实验验证了这种方法。结果表明,该方法在303 ~ 423 K的温度范围内误差小于2.3%,可以实现多功能自旋电子传感器的温度和磁场检测。
{"title":"A new johnson-noise-based thermometry using giant magnetoresistive sensor","authors":"Xuyang Liu, Chunhua Liu, P. Pong","doi":"10.1109/ISNE.2016.7543346","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543346","url":null,"abstract":"This paper proposes a temperature measurement method using a giant magnetoresistive sensor as a sensing resistor based on Johnson noise thermometry. Experiments were performed to verify this approach. The results demonstrate the reliability of this approach with error less than 2.3% in the temperature range from 303 K to 423 K, which can enable a multifunctional spintronic sensor detecting temperature and magnetic field.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131645964","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
La0.7Sr0.3MnO3 toroidal inductor for low magnetic field sensing 用于低磁场感应的La0.7Sr0.3MnO3环形电感器
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543337
Hsiao-Wen Yu, Ming-Jye Chen, J. Chen
La0.7Sr0.3MnO3 (LSMO) toroidal inductors sintered at 1300°C for various sintering time have been fabricated for magnetic field sensing. The complex permeability spectra show relaxation character due to domain wall displacement. As the sintering time increases, the permeability increases and the resonance frequency fr decreases. Under applied magnetic field, the permeability decreases and fr increases. Large shift of fr by low fields was observed. The 8 hr sintering sample exhibits a best magnetic field to frequency transfer ratio of 5.13 kHz/G. Our measured results indicate that LSMO is a promising material for the design and fabrication of low-cost magnetic field sensors.
制备了在1300℃下不同烧结时间烧结的La0.7Sr0.3MnO3 (LSMO)环形电感器。复磁导率谱由于畴壁位移而呈现松弛特征。随着烧结时间的延长,磁导率增大,共振频率fr减小。外加磁场作用下,磁导率减小,磁导率增大。观测到低场的较大位移。8小时烧结样品的最佳磁场/频率传递比为5.13 kHz/G。我们的测量结果表明,LSMO是设计和制造低成本磁场传感器的一种很有前途的材料。
{"title":"La0.7Sr0.3MnO3 toroidal inductor for low magnetic field sensing","authors":"Hsiao-Wen Yu, Ming-Jye Chen, J. Chen","doi":"10.1109/ISNE.2016.7543337","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543337","url":null,"abstract":"La0.7Sr0.3MnO3 (LSMO) toroidal inductors sintered at 1300°C for various sintering time have been fabricated for magnetic field sensing. The complex permeability spectra show relaxation character due to domain wall displacement. As the sintering time increases, the permeability increases and the resonance frequency fr decreases. Under applied magnetic field, the permeability decreases and fr increases. Large shift of fr by low fields was observed. The 8 hr sintering sample exhibits a best magnetic field to frequency transfer ratio of 5.13 kHz/G. Our measured results indicate that LSMO is a promising material for the design and fabrication of low-cost magnetic field sensors.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132927003","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Airgap Fiber Fabry-Pérot Interferometer using a hollow core fiber coated with a layer of photopolymer for measurement of relative humidity and temperature 气隙光纤法布里-普氏干涉仪采用中空芯光纤包覆一层光聚合物,用于测量相对湿度和温度
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543332
Yuan-Jie Yang, Cheng-Ling Lee
This work proposes an air-gap Fiber Fabry-Pérot Interferometer (AG-FFPI) using a hollow core fiber coated with a layer of new polymer, NOA87 for the measurement of relative humidity (RH) and temperature (T). The principle is based on variations of the cavities that are moisture and temperature sensitive to change the interference patterns. Experimental results show that the sensitivities of the RH and T with around 0.3nm/°C and 0.018nm/ %RH can be obtained, respectively.
这项工作提出了一种气隙光纤法布里-帕姆罗干涉仪(AG-FFPI),该干涉仪使用一层新型聚合物NOA87涂层的中空芯光纤,用于测量相对湿度(RH)和温度(T)。其原理是基于对湿度和温度敏感的空腔的变化来改变干涉模式。实验结果表明,RH和T在0.3nm/°C和0.018nm/ %RH左右的灵敏度分别可以得到。
{"title":"Airgap Fiber Fabry-Pérot Interferometer using a hollow core fiber coated with a layer of photopolymer for measurement of relative humidity and temperature","authors":"Yuan-Jie Yang, Cheng-Ling Lee","doi":"10.1109/ISNE.2016.7543332","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543332","url":null,"abstract":"This work proposes an air-gap Fiber Fabry-Pérot Interferometer (AG-FFPI) using a hollow core fiber coated with a layer of new polymer, NOA87 for the measurement of relative humidity (RH) and temperature (T). The principle is based on variations of the cavities that are moisture and temperature sensitive to change the interference patterns. Experimental results show that the sensitivities of the RH and T with around 0.3nm/°C and 0.018nm/ %RH can be obtained, respectively.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"96 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116337880","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A sub-GHz high data-rate transceiver for wireless sensor network in IoT 一种用于物联网无线传感器网络的sub-GHz高数据速率收发器
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543376
Shenmin Zhang, Ning Chen, Min Lin
A sub-GHz broadband RF transceiver for wireless sensor network nodes in Internet of Things was designed and implemented in 130nm CMOS process. Several methods like noise cancellation, inverter-based amplifier, 25% duty cycle LO specially for passive current-mode mixer are adopted and combined in the design process. The receiver presents -85dBm sensitivity at a packet error ratio of 1% and transmitter provides emission power up to 12dBm and error vector magnitude better than -30dBc. High data rate of 54Mbps can be measured, which substantially exceeds the common data rate of 100k-2Mbps of most mainstream wireless sensor network nodes.
设计并实现了一种用于物联网无线传感器网络节点的sub-GHz宽带射频收发器。在设计过程中采用了降噪、基于逆变器的放大器、专用于无源电流模混频器的25%占空比LO等多种方法并加以结合。接收机的灵敏度为-85dBm,包错误率为1%;发射机的发射功率高达12dBm,误差矢量幅度优于-30dBc。可以测量到高达54Mbps的数据速率,大大超过了大多数主流无线传感器网络节点100k-2Mbps的常见数据速率。
{"title":"A sub-GHz high data-rate transceiver for wireless sensor network in IoT","authors":"Shenmin Zhang, Ning Chen, Min Lin","doi":"10.1109/ISNE.2016.7543376","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543376","url":null,"abstract":"A sub-GHz broadband RF transceiver for wireless sensor network nodes in Internet of Things was designed and implemented in 130nm CMOS process. Several methods like noise cancellation, inverter-based amplifier, 25% duty cycle LO specially for passive current-mode mixer are adopted and combined in the design process. The receiver presents -85dBm sensitivity at a packet error ratio of 1% and transmitter provides emission power up to 12dBm and error vector magnitude better than -30dBc. High data rate of 54Mbps can be measured, which substantially exceeds the common data rate of 100k-2Mbps of most mainstream wireless sensor network nodes.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114580026","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The opto-thermal effect on the encapsulated cholesteric liquid crystal 包封胆甾液晶的光热效应
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543398
Yu-Sung Liu, Hui-Chi Lin, K. Yang
In this paper, the transmittance of the micro-encapsulated cholesteric liquid crystal was changed by the pump beam. The opto-thermal effect, induced by the PEDOT absorbing layer, results in the variation of the transmittance on the cholesteric liquid crystal thin films. We discussed the possibility of utilizing this material for the application of flexible electronic papers by evaluating the thickness of cholesteric liquid crystal layer and the PEDOT layer, respectively. The results showed that the patterning effect is better for the sample of 12 μm thick cholesteric liquid crystal layer than that of 25 μm at the same excitation conditions and the same thickness of the PEDOT layer. And the patterning effect is better for the sample of 7.5 μm thick PEDOT than that of 5.5 μm at the same excitation conditions and the same thickness of the cholesteric liquid crystal layer. We also successfully achieved a gray-scale pattern on cholesteric liquid crystal using shutter to control the light excitation time. To explore the reason why the cholesteric liquid crystal appeared a transmittance variation when pumped, two experiments were checked: (1) Under the optical field within the pump intensity range of this experiment, the transmittance of cholesteric liquid crystal were irrelevant to the angles between the pump and probe polarizations. (2) As for the opto-thermal effects, a simple heat-conducting model was proposed to fit with the experimental results. The theoretical and experimental results agree well with this model.
本文研究了泵浦光束对微胶囊化胆甾液晶透光率的影响。PEDOT吸收层引起的光热效应导致胆甾液晶薄膜的透过率发生变化。通过对胆甾液晶层厚度和PEDOT层厚度的评价,探讨了该材料应用于柔性电子纸的可能性。结果表明,在相同激发条件和PEDOT层厚度下,12 μm厚的胆甾型液晶层的图像化效果优于25 μm厚的胆甾型液晶层。在相同的激发条件和相同的胆甾液晶层厚度下,7.5 μm PEDOT样品的图像化效果优于5.5 μm PEDOT样品。我们还利用快门控制光激发时间,成功地在胆甾液晶上实现了灰度图案。为了探究胆甾体液晶在泵浦作用下出现透射率变化的原因,通过两个实验进行了检验:(1)在本实验泵浦强度范围内的光场下,胆甾体液晶的透射率与泵浦与探针的偏振角度无关。(2)对于光热效应,提出了与实验结果拟合的简单导热模型。理论和实验结果与该模型吻合较好。
{"title":"The opto-thermal effect on the encapsulated cholesteric liquid crystal","authors":"Yu-Sung Liu, Hui-Chi Lin, K. Yang","doi":"10.1109/ISNE.2016.7543398","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543398","url":null,"abstract":"In this paper, the transmittance of the micro-encapsulated cholesteric liquid crystal was changed by the pump beam. The opto-thermal effect, induced by the PEDOT absorbing layer, results in the variation of the transmittance on the cholesteric liquid crystal thin films. We discussed the possibility of utilizing this material for the application of flexible electronic papers by evaluating the thickness of cholesteric liquid crystal layer and the PEDOT layer, respectively. The results showed that the patterning effect is better for the sample of 12 μm thick cholesteric liquid crystal layer than that of 25 μm at the same excitation conditions and the same thickness of the PEDOT layer. And the patterning effect is better for the sample of 7.5 μm thick PEDOT than that of 5.5 μm at the same excitation conditions and the same thickness of the cholesteric liquid crystal layer. We also successfully achieved a gray-scale pattern on cholesteric liquid crystal using shutter to control the light excitation time. To explore the reason why the cholesteric liquid crystal appeared a transmittance variation when pumped, two experiments were checked: (1) Under the optical field within the pump intensity range of this experiment, the transmittance of cholesteric liquid crystal were irrelevant to the angles between the pump and probe polarizations. (2) As for the opto-thermal effects, a simple heat-conducting model was proposed to fit with the experimental results. The theoretical and experimental results agree well with this model.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130654764","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
期刊
2016 5th International Symposium on Next-Generation Electronics (ISNE)
全部 Acc. Chem. Res. ACS Applied Bio Materials ACS Appl. Electron. Mater. ACS Appl. Energy Mater. ACS Appl. Mater. Interfaces ACS Appl. Nano Mater. ACS Appl. Polym. Mater. ACS BIOMATER-SCI ENG ACS Catal. ACS Cent. Sci. ACS Chem. Biol. ACS Chemical Health & Safety ACS Chem. Neurosci. ACS Comb. Sci. ACS Earth Space Chem. ACS Energy Lett. ACS Infect. Dis. ACS Macro Lett. ACS Mater. Lett. ACS Med. Chem. Lett. ACS Nano ACS Omega ACS Photonics ACS Sens. ACS Sustainable Chem. Eng. ACS Synth. Biol. Anal. Chem. BIOCHEMISTRY-US Bioconjugate Chem. BIOMACROMOLECULES Chem. Res. Toxicol. Chem. Rev. Chem. Mater. CRYST GROWTH DES ENERG FUEL Environ. Sci. Technol. Environ. Sci. Technol. Lett. Eur. J. Inorg. Chem. IND ENG CHEM RES Inorg. Chem. J. Agric. Food. Chem. J. Chem. Eng. Data J. Chem. Educ. J. Chem. Inf. Model. J. Chem. Theory Comput. J. Med. Chem. J. Nat. Prod. J PROTEOME RES J. Am. Chem. Soc. LANGMUIR MACROMOLECULES Mol. Pharmaceutics Nano Lett. Org. Lett. ORG PROCESS RES DEV ORGANOMETALLICS J. Org. Chem. J. Phys. Chem. J. Phys. Chem. A J. Phys. Chem. B J. Phys. Chem. C J. Phys. Chem. Lett. Analyst Anal. Methods Biomater. Sci. Catal. Sci. Technol. Chem. Commun. Chem. Soc. Rev. CHEM EDUC RES PRACT CRYSTENGCOMM Dalton Trans. Energy Environ. Sci. ENVIRON SCI-NANO ENVIRON SCI-PROC IMP ENVIRON SCI-WAT RES Faraday Discuss. Food Funct. Green Chem. Inorg. Chem. Front. Integr. Biol. J. Anal. At. Spectrom. J. Mater. Chem. A J. Mater. Chem. B J. Mater. Chem. C Lab Chip Mater. Chem. Front. Mater. Horiz. MEDCHEMCOMM Metallomics Mol. Biosyst. Mol. Syst. Des. Eng. Nanoscale Nanoscale Horiz. Nat. Prod. Rep. New J. Chem. Org. Biomol. Chem. Org. Chem. Front. PHOTOCH PHOTOBIO SCI PCCP Polym. Chem.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1