Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543343
Ke Zhu, C. Sum, W. Lee, P. Pong
Identification of voltage-energized cables can potentially prevent deadly consequences such as electrocution and explosion. We find that the voltage-energized status can be identified by measuring the distribution pattern of magnetic flux density around the cable surface. The weak magnetic fields emitted from the charging current of the voltage-energized cable are measured by sensitive magnetoresistive sensors in high spatial resolution. The feasibility of this non-destructive platform was verified on a 22 kV three-phase underground power cable. The platform can improve situational awareness of serviceman dramatically.
{"title":"Voltage-energized status identification of three-phase underground power cables via non-destructive magnetoresistive sensor","authors":"Ke Zhu, C. Sum, W. Lee, P. Pong","doi":"10.1109/ISNE.2016.7543343","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543343","url":null,"abstract":"Identification of voltage-energized cables can potentially prevent deadly consequences such as electrocution and explosion. We find that the voltage-energized status can be identified by measuring the distribution pattern of magnetic flux density around the cable surface. The weak magnetic fields emitted from the charging current of the voltage-energized cable are measured by sensitive magnetoresistive sensors in high spatial resolution. The feasibility of this non-destructive platform was verified on a 22 kV three-phase underground power cable. The platform can improve situational awareness of serviceman dramatically.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130058613","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543355
Yen-Long Lee, Soon-Jyh Chang
This paper presents a 6 Gb/s low-power half-rate equalizer. Compared with the current steering summation circuits, the proposed charge-average switched-capacitor equalizer achieves good energy and area efficiency, and thus is suitable for multi-lane applications. The proposed architecture are majorly constructed by switched-capacitor and digital circuitries, it is hence suitable for advanced manufacturing process. The proof-of-concept prototype was fabricated in TSMC 0.18 um CMOS technology. It occupies 0.0034 mm2 area and the figure of merit is 10 fJ/bit/dB while operating at a bit-error-rate <; 10-12 for 6 Gb/s data passed over a 100 cm FR4 PCB channel with 23.2 dB channel loss at 3 GHz.
本文提出了一种6gb /s低功耗半速率均衡器。与现有的转向求和电路相比，所提出的电荷平均开关电容均衡器具有良好的能量效率和面积效率，适合多车道应用。该结构主要由开关电容和数字电路构成，因此适合于先进的制造工艺。概念验证原型采用台积电0.18 um CMOS技术制造。它占地0.0034 mm2，在误码率<;10-12为6gb /s的数据通过100厘米的FR4 PCB通道，在3ghz下通道损耗为23.2 dB。
{"title":"A 10-fJ/bit/dB half-rate equalizer with charge-average switched-capacitor summation technique","authors":"Yen-Long Lee, Soon-Jyh Chang","doi":"10.1109/ISNE.2016.7543355","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543355","url":null,"abstract":"This paper presents a 6 Gb/s low-power half-rate equalizer. Compared with the current steering summation circuits, the proposed charge-average switched-capacitor equalizer achieves good energy and area efficiency, and thus is suitable for multi-lane applications. The proposed architecture are majorly constructed by switched-capacitor and digital circuitries, it is hence suitable for advanced manufacturing process. The proof-of-concept prototype was fabricated in TSMC 0.18 um CMOS technology. It occupies 0.0034 mm2 area and the figure of merit is 10 fJ/bit/dB while operating at a bit-error-rate <; 10-12 for 6 Gb/s data passed over a 100 cm FR4 PCB channel with 23.2 dB channel loss at 3 GHz.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128813708","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543304
C. Li, Wen-Jui Chiang, N. Lin, Jia-Huei Lyu, Yi-Zhen Liu, Bo-Yi Wu, S. Shei
Synthesis and application of InP/ZnS quantum dots (InP/ZnS QDs) were synthesized via non-coordinated system. The structural model of InP/ZnS QDs was completed by using composition analysis, absorption spectroscopy and emission spectroscopy. Furthermore, their applications as phosphors were investigated. The ZnS shell-growth temperature and time was controlled to obtain QDs with different sizes and the emission wavelength. Finally, a white LED was fabricated with InP/ZnS QDs.
{"title":"White LEDs with InP-ZnS quantum dots","authors":"C. Li, Wen-Jui Chiang, N. Lin, Jia-Huei Lyu, Yi-Zhen Liu, Bo-Yi Wu, S. Shei","doi":"10.1109/ISNE.2016.7543304","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543304","url":null,"abstract":"Synthesis and application of InP/ZnS quantum dots (InP/ZnS QDs) were synthesized via non-coordinated system. The structural model of InP/ZnS QDs was completed by using composition analysis, absorption spectroscopy and emission spectroscopy. Furthermore, their applications as phosphors were investigated. The ZnS shell-growth temperature and time was controlled to obtain QDs with different sizes and the emission wavelength. Finally, a white LED was fabricated with InP/ZnS QDs.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"70 3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125485571","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543288
Han-Wen Liu, Chien-hung Lin, Fang-Hsing Wang
The recovery characteristics of threshold voltage (Vth) for the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) stressed under the DC bias conditions are investigated. No matter what the positive or negative gate biased stresses, there are recovery phenomena existing in the Vth degradation. The larger the magnitude of the stress voltage is, the larger the amount of Vth recovery is. Owing to the lower energy level of the hole trapping center within silicon nitride film than that of an electron, the recovery amount of Vth for the a-Si:H TFTs stressed at negative gate biased stress is larger than those stressed at positive gate biased stress.
{"title":"Recovery characteristics of threshold voltage degradation for hydrogenated amorphous silicon thin-film transistors under DC bias stresses","authors":"Han-Wen Liu, Chien-hung Lin, Fang-Hsing Wang","doi":"10.1109/ISNE.2016.7543288","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543288","url":null,"abstract":"The recovery characteristics of threshold voltage (Vth) for the hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) stressed under the DC bias conditions are investigated. No matter what the positive or negative gate biased stresses, there are recovery phenomena existing in the Vth degradation. The larger the magnitude of the stress voltage is, the larger the amount of Vth recovery is. Owing to the lower energy level of the hole trapping center within silicon nitride film than that of an electron, the recovery amount of Vth for the a-Si:H TFTs stressed at negative gate biased stress is larger than those stressed at positive gate biased stress.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"44 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125009177","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543309
Wei-Chieh Chen, Li-Hsing Chen, Yan-Ting Lin, Hao-Hsiung Lin
III-V nanowire (NW) integrates with (001) Si substrate is a promising issue due to its potential in developing future IC technology. In this study, we develop a two-step growth method which can effectively control the NW in single growth direction. TEM analysis has been used to study the NW growth mechanism.
{"title":"Structural properties of InAs nanowires on (001) Si","authors":"Wei-Chieh Chen, Li-Hsing Chen, Yan-Ting Lin, Hao-Hsiung Lin","doi":"10.1109/ISNE.2016.7543309","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543309","url":null,"abstract":"III-V nanowire (NW) integrates with (001) Si substrate is a promising issue due to its potential in developing future IC technology. In this study, we develop a two-step growth method which can effectively control the NW in single growth direction. TEM analysis has been used to study the NW growth mechanism.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"144 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123372015","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
To fit the development trend of future DC micro-grids, an intelligent DC power monitoring system and sensor network is proposed in this paper for smart homes. The system is mainly composed of DC smart socket, sensors, home gateway, cloud sever and remote monitor device. According to Internet of things (IoT), all devices are connected through wireless protocols, such as Zigbee, WiFi and 3G/4G mobile communications, to maximize the flexibility and ease the installation for users. All power consumption, real-time video streaming and environment sensing can be accessed remotely via smart phones, pads or computers to ensure the most security and comfortability for user homes. Alarms will be issued for any irregular condition sensed. The detail report and statistics for home appliances are also provided to help users reschedule the appliance usage to lower the electricity bills. The proposed system is realized with free open source software to minimize the overall cost.
{"title":"Intelligent DC power monitoring system and sensor network based on ZigBee-equipped smart sockets","authors":"Yi-shiun Tsai, Chun-Yi Chu, Min-che Li, Yuan-Hsiang Lin, Poki Chen","doi":"10.1109/ISNE.2016.7543404","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543404","url":null,"abstract":"To fit the development trend of future DC micro-grids, an intelligent DC power monitoring system and sensor network is proposed in this paper for smart homes. The system is mainly composed of DC smart socket, sensors, home gateway, cloud sever and remote monitor device. According to Internet of things (IoT), all devices are connected through wireless protocols, such as Zigbee, WiFi and 3G/4G mobile communications, to maximize the flexibility and ease the installation for users. All power consumption, real-time video streaming and environment sensing can be accessed remotely via smart phones, pads or computers to ensure the most security and comfortability for user homes. Alarms will be issued for any irregular condition sensed. The detail report and statistics for home appliances are also provided to help users reschedule the appliance usage to lower the electricity bills. The proposed system is realized with free open source software to minimize the overall cost.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126354125","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543345
Qing-Shan Chang, Shang-Hui Yang, Ding-Chin Chou
Lighting is closely related to our daily life; for different places, the types of the lighting designs and the energy-saving controls are very different; however, which can determine whether the lighting energy-saving control can succeed or not. The most frequently-used energy-saving methods include turning on/off lamps according to timing, turning on/off lamps by divided loops, using high-efficiency energy-saving lamps and the like; in addition to above methods, are there any other applicable energy-saving methods more energy-saving, safer and more comfortable? The paper takes a large underground parking lot as an example to propose using a dimming LED lamps to substitute for the currently used high-efficiency T5 lamps, and combines which with the sensor of the currently available vehicle searching system by system integration; the paper designs two scenarios, including the normal scenario and the car pick-up scenario; after we simulates the two scenarios, we found the energy-saving efficiency can be further increased to about 83%; therefore, the energy-saving efficiency is very obvious.
{"title":"Simulation research of using PWM to control LED scenario energy-saving system — The case of large underground parking lot: Preparation of papers in two-column format for ISNE 2016","authors":"Qing-Shan Chang, Shang-Hui Yang, Ding-Chin Chou","doi":"10.1109/ISNE.2016.7543345","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543345","url":null,"abstract":"Lighting is closely related to our daily life; for different places, the types of the lighting designs and the energy-saving controls are very different; however, which can determine whether the lighting energy-saving control can succeed or not. The most frequently-used energy-saving methods include turning on/off lamps according to timing, turning on/off lamps by divided loops, using high-efficiency energy-saving lamps and the like; in addition to above methods, are there any other applicable energy-saving methods more energy-saving, safer and more comfortable? The paper takes a large underground parking lot as an example to propose using a dimming LED lamps to substitute for the currently used high-efficiency T5 lamps, and combines which with the sensor of the currently available vehicle searching system by system integration; the paper designs two scenarios, including the normal scenario and the car pick-up scenario; after we simulates the two scenarios, we found the energy-saving efficiency can be further increased to about 83%; therefore, the energy-saving efficiency is very obvious.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125671069","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543342
Ke Zhu, P. Pong
Space and cost limitations are inherent in installing magnetic core individually as the magnetic flux concentrator (MFC) of a multi-conductor current sensing system. In this study, we first examine the basic and compact MFC structure derived from the magnetic core for multi-conductor current sensing systems. Then we propose and experimentally verify the curved trapezoidal MFCs with covering the dense magnetic field area to further improve the amplification ratio. The design increases sensitivity considerably and is crucial when the sensing currents are extremely low.
{"title":"Curved trapezoidal magnetic flux concentrator design for improving sensitivity of magnetic sensor in multi-conductor current measurement","authors":"Ke Zhu, P. Pong","doi":"10.1109/ISNE.2016.7543342","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543342","url":null,"abstract":"Space and cost limitations are inherent in installing magnetic core individually as the magnetic flux concentrator (MFC) of a multi-conductor current sensing system. In this study, we first examine the basic and compact MFC structure derived from the magnetic core for multi-conductor current sensing systems. Then we propose and experimentally verify the curved trapezoidal MFCs with covering the dense magnetic field area to further improve the amplification ratio. The design increases sensitivity considerably and is crucial when the sensing currents are extremely low.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132089579","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543324
N. Q. Anh, Thoai Phu Vo
This study presents a novel solution, application of the red Y2O3:Eu3+ dopant phosphor, for enhancing color rendering index to more 86 for multi-chip white LED lamps (MCW-LEDs) having correlated color temperature (CCT) of 7700 K. Besides, the impacts of the Y2O3:Eu3+ phosphor on the attenuation of light through phosphor layers of the various packages is also demonstrated based on the Beer-Lambert law. Simulation results provide important conclusion for selecting and developing the phosphor materials in MCW-LEDs manufacturing.
{"title":"Improvement of color rendering ability for multi-chip LED packages by using Y2O3:Eu3+ phosphor","authors":"N. Q. Anh, Thoai Phu Vo","doi":"10.1109/ISNE.2016.7543324","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543324","url":null,"abstract":"This study presents a novel solution, application of the red Y<sub>2</sub>O<sub>3</sub>:Eu<sup>3+</sup> dopant phosphor, for enhancing color rendering index to more 86 for multi-chip white LED lamps (MCW-LEDs) having correlated color temperature (CCT) of 7700 K. Besides, the impacts of the Y<sub>2</sub>O<sub>3</sub>:Eu<sup>3+</sup> phosphor on the attenuation of light through phosphor layers of the various packages is also demonstrated based on the Beer-Lambert law. Simulation results provide important conclusion for selecting and developing the phosphor materials in MCW-LEDs manufacturing.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133262643","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543291
Chun-Chieh Lin, Chang-Chih Chung, Kuan-Jhih Hou, T. Tseng
Albumen of duck egg based, an environmentally friendly material, resistive switching memory is proposed in this work. The resistive switching properties of the device are improved by doping with Fe ions. The non-volatility of the device is demonstrated. A possible resistive switching filamentary model is proposed. The proposed memory device is possibly used in next-generation non-volatile memory application.
{"title":"Improved properties in albumen of duck egg based resistive switching memory by doping with Fe Ions","authors":"Chun-Chieh Lin, Chang-Chih Chung, Kuan-Jhih Hou, T. Tseng","doi":"10.1109/ISNE.2016.7543291","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543291","url":null,"abstract":"Albumen of duck egg based, an environmentally friendly material, resistive switching memory is proposed in this work. The resistive switching properties of the device are improved by doping with Fe ions. The non-volatility of the device is demonstrated. A possible resistive switching filamentary model is proposed. The proposed memory device is possibly used in next-generation non-volatile memory application.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123495757","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：