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2016 5th International Symposium on Next-Generation Electronics (ISNE)最新文献

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Digital calibration technique for subrange ADC based on SAR architecture 基于SAR结构的子距离ADC数字定标技术
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543358
Ying Ju, Fule Li, X. Gu, Chun Zhang, Zhihua Wang
A novel digital calibration technique to correct DAC errors from capacitor mismatch is presented in this paper. The jump height of transfer curve is measured for calibration and random interference introducing method helps to improve the measurement accuracy with seldom modification on analog circuits. An 11-bit 250Ms/s subrange ADC based on SAR architecture is designed to test this calibration technique. Simulation results show that significant improvements can be achieved with the proposed calibration technique.
本文提出了一种新的数字校正技术,用于校正由电容失配引起的DAC误差。通过测量传递曲线的跳高进行标定,引入随机干扰的方法在模拟电路上修正较少的情况下提高了测量精度。设计了一个基于SAR结构的11位250Ms/s子范围ADC来测试该校准技术。仿真结果表明,所提出的标定技术可以取得显著的改进效果。
{"title":"Digital calibration technique for subrange ADC based on SAR architecture","authors":"Ying Ju, Fule Li, X. Gu, Chun Zhang, Zhihua Wang","doi":"10.1109/ISNE.2016.7543358","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543358","url":null,"abstract":"A novel digital calibration technique to correct DAC errors from capacitor mismatch is presented in this paper. The jump height of transfer curve is measured for calibration and random interference introducing method helps to improve the measurement accuracy with seldom modification on analog circuits. An 11-bit 250Ms/s subrange ADC based on SAR architecture is designed to test this calibration technique. Simulation results show that significant improvements can be achieved with the proposed calibration technique.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"123 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124186219","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
A 88–98 GHz power amplifier in 90 nm CMOS 88-98 GHz功率放大器在90纳米CMOS
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543354
Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin
A 88 to 98 GHz broadband power amplifier (PA) using the low-cost 90 nm CMOS process technology is designed. The positive feedback of common-source (CS) configuration and Y-shaped power divider and combine are employed to improve performance of the PA. The proposed PA exhibits a simulated saturated output power (PSAT) of 17 dBm, output-referred 1 dB compression point (OP1dB) of 15.2 dBm, power added efficiency (PAE) of 16.4%, and gain of 20.4dB at 94 GHz. In addition, the input and output reflection coefficients is below -10dB at 94 GHz. Simulated results show that the methods applied to this PA can effectively improve gain, OP1dB and PAE of the PA.
设计了一种采用低成本90纳米CMOS工艺技术的88 ~ 98 GHz宽带功率放大器。采用了共源(CS)结构的正反馈和y型功率分配器和组合来提高功率放大器的性能。该放大器在94 GHz时的模拟饱和输出功率(PSAT)为17 dBm,输出参考1db压缩点(OP1dB)为15.2 dBm,功率附加效率(PAE)为16.4%,增益为20.4dB。此外,在94 GHz时,输入和输出反射系数都低于-10dB。仿真结果表明,所采用的方法可以有效地提高放大器的增益、OP1dB和PAE。
{"title":"A 88–98 GHz power amplifier in 90 nm CMOS","authors":"Van Kien Nguyen, Yo‐Sheng Lin, Chien-Chin Wang, M. H. Kao, Yu-Ching Lin","doi":"10.1109/ISNE.2016.7543354","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543354","url":null,"abstract":"A 88 to 98 GHz broadband power amplifier (PA) using the low-cost 90 nm CMOS process technology is designed. The positive feedback of common-source (CS) configuration and Y-shaped power divider and combine are employed to improve performance of the PA. The proposed PA exhibits a simulated saturated output power (PSAT) of 17 dBm, output-referred 1 dB compression point (OP1dB) of 15.2 dBm, power added efficiency (PAE) of 16.4%, and gain of 20.4dB at 94 GHz. In addition, the input and output reflection coefficients is below -10dB at 94 GHz. Simulated results show that the methods applied to this PA can effectively improve gain, OP1dB and PAE of the PA.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126596281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel speed-up coding method in quadruple-level-cell 3D NAND flash memory 一种新的四阶单元3D NAND快闪记忆体加速编码方法
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543285
Xu Jin, Huapeng Xiao, Dong Wu, Ning Deng, Huaqiang Wu, Kanyu Cao, H. Qian
As more and more demand on high density storage, 3D NAND Flash memories have developed into multi-level cell and triple-level cell. With the charge-trapping technology adopted in 3D NAND Flash, it is possible to achieve quadruple-level-cell (QLC) which brings higher density capability. Meanwhile, the program coding method makes significant impact on the efficiency of the lockout operation in the program verification. A novel speed-up coding method is presented in this paper, which reduces nearly 30% time delay and 40% power consumption during the verify lockout operation in the QLC memory.
随着人们对高密度存储的要求越来越高,3D NAND闪存已经向多级单元和三级单元发展。3D NAND闪存采用电荷捕获技术,可以实现四能级单元(QLC),从而带来更高的密度性能。同时,在程序验证中,程序编码方法对锁定操作的效率有重要影响。本文提出了一种新的加速编码方法,可使QLC存储器中验证锁定操作的时延降低近30%,功耗降低40%。
{"title":"A novel speed-up coding method in quadruple-level-cell 3D NAND flash memory","authors":"Xu Jin, Huapeng Xiao, Dong Wu, Ning Deng, Huaqiang Wu, Kanyu Cao, H. Qian","doi":"10.1109/ISNE.2016.7543285","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543285","url":null,"abstract":"As more and more demand on high density storage, 3D NAND Flash memories have developed into multi-level cell and triple-level cell. With the charge-trapping technology adopted in 3D NAND Flash, it is possible to achieve quadruple-level-cell (QLC) which brings higher density capability. Meanwhile, the program coding method makes significant impact on the efficiency of the lockout operation in the program verification. A novel speed-up coding method is presented in this paper, which reduces nearly 30% time delay and 40% power consumption during the verify lockout operation in the QLC memory.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"63 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131126790","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A 10-bit segmented digital-to-time converter with 10-ps-level resolution and offset calibration circuits 一个10位分段数字时间转换器,具有10ps级分辨率和偏移校准电路
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543359
Keng-Hong Chu, Tse-An Chen, Chia-Ling Wei
A 10-bit segmented digital-to-time converter (DTC) with offset calibration is proposed. The segmented architecture (2-bit binary code + 8-bit thermometer code) is adopted in the proposed DTC to reduce the impact of process variation on linearity. Moreover, the relative time generation is used for getting high resolution, and the offset calibration circuit is also implemented to calibrate the offset error inherent in the relative time generation. The proposed DTC was fabricated using the TSMC 0.18μm 1P6M mixed-signal process. The resolution is designed to be in the order of 10ps, and the total output timing range is in the order of 10 ns. The core area is 0.7mm2.
提出了一种带偏移校准的10位分段数字时间转换器(DTC)。该DTC采用2位二进制码+ 8位温度计码的分段结构,减少了工艺变化对线性度的影响。此外,为了获得高分辨率,采用了相对时间生成,并实现了偏移校准电路来校准相对时间生成中固有的偏移误差。该DTC采用TSMC 0.18μm 1P6M混合信号工艺制备。分辨率设计为10ps级,总输出时序范围为10ns级。核心面积为0.7mm2。
{"title":"A 10-bit segmented digital-to-time converter with 10-ps-level resolution and offset calibration circuits","authors":"Keng-Hong Chu, Tse-An Chen, Chia-Ling Wei","doi":"10.1109/ISNE.2016.7543359","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543359","url":null,"abstract":"A 10-bit segmented digital-to-time converter (DTC) with offset calibration is proposed. The segmented architecture (2-bit binary code + 8-bit thermometer code) is adopted in the proposed DTC to reduce the impact of process variation on linearity. Moreover, the relative time generation is used for getting high resolution, and the offset calibration circuit is also implemented to calibrate the offset error inherent in the relative time generation. The proposed DTC was fabricated using the TSMC 0.18μm 1P6M mixed-signal process. The resolution is designed to be in the order of 10ps, and the total output timing range is in the order of 10 ns. The core area is 0.7mm2.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115159693","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
3D IC test scheduling with test pads considered 3D集成电路测试调度与测试垫考虑
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543363
Ming-Hsuan Hsu, Chun-Hua Cheng, Shih-Hsu Huang
As the design complexity increases, three-dimensional (3D) integrated circuit (IC) design has become an industry trend. However, the testing of a 3D IC is a design challenge. In addition to minimize the test application time (including pre-bond testing and post-bond testing), the number of test pads of each layer should also be taken into account. In this paper, we propose an integer linear programming (ILP) approach to perform the 3D IC test scheduling with test pads considered. Different from those previous works, our objective is to minimize the weighted sum of the test application time and the number of required test pads. Experimental results consistently show that our approach works well in practice.
随着设计复杂性的增加,三维(3D)集成电路(IC)设计已成为一种行业趋势。然而,3D集成电路的测试是一个设计挑战。除了尽量减少测试应用时间(包括粘接前测试和粘接后测试)外,还应考虑到每层测试垫的数量。在本文中,我们提出了一种整数线性规划(ILP)方法来执行三维集成电路测试调度。与之前的工作不同,我们的目标是最小化测试应用时间和所需测试垫数量的加权总和。实验结果一致表明,该方法在实际应用中效果良好。
{"title":"3D IC test scheduling with test pads considered","authors":"Ming-Hsuan Hsu, Chun-Hua Cheng, Shih-Hsu Huang","doi":"10.1109/ISNE.2016.7543363","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543363","url":null,"abstract":"As the design complexity increases, three-dimensional (3D) integrated circuit (IC) design has become an industry trend. However, the testing of a 3D IC is a design challenge. In addition to minimize the test application time (including pre-bond testing and post-bond testing), the number of test pads of each layer should also be taken into account. In this paper, we propose an integer linear programming (ILP) approach to perform the 3D IC test scheduling with test pads considered. Different from those previous works, our objective is to minimize the weighted sum of the test application time and the number of required test pads. Experimental results consistently show that our approach works well in practice.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"49 2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115969537","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Working distance dependence of trapping efficiency in fiber optical tweezers 光纤镊捕获效率与工作距离的关系
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543390
Shih‐Kun Liu, Yong-Jai Shen, Wei-Yi Sung, Hong-Zhang Lin
In this study, a fiber optical tweezer is successful integrated for trapping polystyrene particles at the wavelength of 650 nm. The experimental results show that the optimal trapping efficiency of 4.3% occurs at the working distance of 26 μm.
在本研究中,成功集成了一种光纤镊子,用于捕获波长为650 nm的聚苯乙烯颗粒。实验结果表明,当工作距离为26 μm时,捕集效率为4.3%。
{"title":"Working distance dependence of trapping efficiency in fiber optical tweezers","authors":"Shih‐Kun Liu, Yong-Jai Shen, Wei-Yi Sung, Hong-Zhang Lin","doi":"10.1109/ISNE.2016.7543390","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543390","url":null,"abstract":"In this study, a fiber optical tweezer is successful integrated for trapping polystyrene particles at the wavelength of 650 nm. The experimental results show that the optimal trapping efficiency of 4.3% occurs at the working distance of 26 μm.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"145 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116117142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
The defect reduction of Cu interconnects by optimized Cu seed layer 优化铜种子层对铜互连缺陷的降低
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543278
Shi-Jun Liu, Wei-Lin Wang, Yue-Yin Yen, C. Hsu, Hung-Ju Chien, Kuo-Tzu Peng, M. Yeh, Hsien-Chang Kuo, T. Ying
In Cu interconnects, the disadvantage of physical vapor deposited (PVD) Cu seed is the formation of over-hang on patterned trench. Ar plasma treatment (PT) is utilized to diminish undesirable over-hang profile after the deposition of Cu seed. Moreover, Ar PT improves the surface roughness of Cu seed and enhances the (111) texture of the subsequent electroplated Cu film. By applying Ar PT method, the defects of Cu interconnects have 73% reduction in improvement.
在铜互连中,物理气相沉积(PVD)铜种子的缺点是在图案沟槽上形成悬垂。氩等离子体处理(PT)用于减少铜种子沉积后的不良悬垂剖面。此外,Ar PT改善了Cu种子的表面粗糙度,增强了后续电镀Cu膜的(111)织构。采用Ar - PT方法,铜互连件的缺陷改善率降低了73%。
{"title":"The defect reduction of Cu interconnects by optimized Cu seed layer","authors":"Shi-Jun Liu, Wei-Lin Wang, Yue-Yin Yen, C. Hsu, Hung-Ju Chien, Kuo-Tzu Peng, M. Yeh, Hsien-Chang Kuo, T. Ying","doi":"10.1109/ISNE.2016.7543278","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543278","url":null,"abstract":"In Cu interconnects, the disadvantage of physical vapor deposited (PVD) Cu seed is the formation of over-hang on patterned trench. Ar plasma treatment (PT) is utilized to diminish undesirable over-hang profile after the deposition of Cu seed. Moreover, Ar PT improves the surface roughness of Cu seed and enhances the (111) texture of the subsequent electroplated Cu film. By applying Ar PT method, the defects of Cu interconnects have 73% reduction in improvement.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"34 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116147048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Preparation of nickel oxide on recessed ITO anodes for OLED applications OLED凹槽ITO阳极上氧化镍的制备
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543387
Wen-Tuan Wu, Ching-Ming Hsu, Wei-Ming Lin, Don-Han Tsai, U-Jin Peng
Optical, electrical and surface morphological properties of nickel oxide (NiOx)/recessed indium tin oxide (ITO) films were examined to realize their suitability for serving as an anode of OLEDs. Results showed that adding a top NiOx layer allows recessed ITO to exhibit slightly higher optical effects but degraded its electrical conductance. Due to the largely elevated surface work function with this NiOx interlayer recessed OLED exhibited improved current efficiency.
研究了氧化镍(NiOx)/凹槽氧化铟锡(ITO)薄膜的光学、电学和表面形态特性,以确定其作为oled阳极的适用性。结果表明,顶部添加NiOx层可以使凹槽ITO表现出略高的光学效果,但会降低其电导率。由于这种NiOx层间嵌式OLED的表面功功能大大提高,显示出更高的电流效率。
{"title":"Preparation of nickel oxide on recessed ITO anodes for OLED applications","authors":"Wen-Tuan Wu, Ching-Ming Hsu, Wei-Ming Lin, Don-Han Tsai, U-Jin Peng","doi":"10.1109/ISNE.2016.7543387","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543387","url":null,"abstract":"Optical, electrical and surface morphological properties of nickel oxide (NiOx)/recessed indium tin oxide (ITO) films were examined to realize their suitability for serving as an anode of OLEDs. Results showed that adding a top NiOx layer allows recessed ITO to exhibit slightly higher optical effects but degraded its electrical conductance. Due to the largely elevated surface work function with this NiOx interlayer recessed OLED exhibited improved current efficiency.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122881685","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Integrated continuous-time Sigma-Delta Modulator and low noise amplifier for tracheostomy tube wireless application 集成连续时间σ - δ调制器和低噪声放大器在气管造口管无线应用中的应用
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543373
W. Lai, M. Chung
This paper presents the design and experimental results of a continuous-time (CT) sigma-delta (ΣΔ) modulator and low noise amplifier (LNA) with data-weighted average (DWA) technology. A new image-reject low noise amplifier is designed for ECG communication and bio-signal wireless acquisitions. An inter-stage T-structure filter is used in the low noise amplifier design to provide 35-dB image rejection. The DWA technique is used for reducing DAC noise due to component mismatches. Experimental results show the ΣΔ modulator achieves 54-dB dynamic range, 51-dB SNR, and 48-dB SNDR over a 10-MHz signal bandwidth with an oversampling ratio (OSR) of 8, while dissipating 19.8 mW from a 1.2-V supply, which can be used for electroencephalogram (EEG) or electrocardiogram (ECG) signal acquisition systems by wireless sensor and communication. This provided sensor setup CO2 concentration detecting instruments on chip. Oxygen generator will real time to support when sensor monitor and wireless send bio-signal to doctor or health cloud.
本文介绍了一种采用数据加权平均(DWA)技术的连续时间(CT) σ - δ (ΣΔ)调制器和低噪声放大器(LNA)的设计和实验结果。设计了一种用于心电通信和生物信号无线采集的新型图像抑制低噪声放大器。在低噪声放大器设计中使用了级间t结构滤波器,以提供35db的图像抑制。DWA技术用于降低由于组件不匹配引起的DAC噪声。实验结果表明,ΣΔ调制器在10 mhz的信号带宽下可实现54 db动态范围、51 db信噪比和48 db SNDR,过采样比(OSR)为8,在1.2 v电源下功耗为19.8 mW,可用于无线传感器和通信的脑电图(EEG)或心电图(ECG)信号采集系统。这就提供了在芯片上安装二氧化碳浓度检测仪器的传感器。当传感器监测和无线向医生或健康云发送生物信号时,氧气发生器将实时支持。
{"title":"Integrated continuous-time Sigma-Delta Modulator and low noise amplifier for tracheostomy tube wireless application","authors":"W. Lai, M. Chung","doi":"10.1109/ISNE.2016.7543373","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543373","url":null,"abstract":"This paper presents the design and experimental results of a continuous-time (CT) sigma-delta (ΣΔ) modulator and low noise amplifier (LNA) with data-weighted average (DWA) technology. A new image-reject low noise amplifier is designed for ECG communication and bio-signal wireless acquisitions. An inter-stage T-structure filter is used in the low noise amplifier design to provide 35-dB image rejection. The DWA technique is used for reducing DAC noise due to component mismatches. Experimental results show the ΣΔ modulator achieves 54-dB dynamic range, 51-dB SNR, and 48-dB SNDR over a 10-MHz signal bandwidth with an oversampling ratio (OSR) of 8, while dissipating 19.8 mW from a 1.2-V supply, which can be used for electroencephalogram (EEG) or electrocardiogram (ECG) signal acquisition systems by wireless sensor and communication. This provided sensor setup CO2 concentration detecting instruments on chip. Oxygen generator will real time to support when sensor monitor and wireless send bio-signal to doctor or health cloud.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122681836","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Grouping and placement of memory BIST controllers for test application time minimization 分组和放置内存BIST控制器,以最小化测试应用时间
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543369
Chang-Han Yeh, Chun-Hua Cheng, Shih-Hsu Huang
With the increasing number of embedded memories in the modern system-on-chips (SOCs), the cost of memory testing becomes significant. Built-in-self-test (BIST) is an effective technique for memory testing. However, BIST has a negative impact on physical design (e.g., area and routing). Moreover, the grouping and placement of memory BIST controllers also greatly influences the test application time. In this paper, we propose an integer linear programming (ILP) approach to optimize the memory BIST design with both physical design (grouping and placement of memory BIST controllers) and test application time considered. Experimental results consistently show that our approach works well in practice.
随着现代片上系统(soc)中嵌入式存储器数量的增加,存储器测试的成本变得非常重要。内置自测(BIST)是一种有效的记忆测试技术。然而,BIST对物理设计(例如,面积和路由)有负面影响。此外,内存BIST控制器的分组和放置也对测试应用时间有很大影响。在本文中,我们提出了一种整数线性规划(ILP)方法来优化内存BIST设计,同时考虑了物理设计(内存BIST控制器的分组和放置)和测试应用时间。实验结果一致表明,该方法在实际应用中效果良好。
{"title":"Grouping and placement of memory BIST controllers for test application time minimization","authors":"Chang-Han Yeh, Chun-Hua Cheng, Shih-Hsu Huang","doi":"10.1109/ISNE.2016.7543369","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543369","url":null,"abstract":"With the increasing number of embedded memories in the modern system-on-chips (SOCs), the cost of memory testing becomes significant. Built-in-self-test (BIST) is an effective technique for memory testing. However, BIST has a negative impact on physical design (e.g., area and routing). Moreover, the grouping and placement of memory BIST controllers also greatly influences the test application time. In this paper, we propose an integer linear programming (ILP) approach to optimize the memory BIST design with both physical design (grouping and placement of memory BIST controllers) and test application time considered. Experimental results consistently show that our approach works well in practice.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125836550","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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2016 5th International Symposium on Next-Generation Electronics (ISNE)
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