Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543277
C. Lai, Y. Lu, Wei Lin Wang, Chia-Yu Li, Hung-Ju Chien, T. Ying
The stand-by current (Isb) performance is impacted by the failure of Cu interconnects due to Cu extrusion forming Cu-loss. This paper provides the solution to overcome the formation of Cu-loss without modifying via etching reactant to keep the capability of via etching tuning. Cu-loss strongly depends on the existence of Cu-F produced by via etching process. By inserting the NH3 flush step, Cu-F is completely removed. Moreover, 5 times the queue time extension is achieved. The Isb failure by Cu-loss is obviously exterminated.
{"title":"Using the NH3 flush step to prevent Cu extrusion for improving stand-by current performance for 28nm-node Cu interconnect and beyond","authors":"C. Lai, Y. Lu, Wei Lin Wang, Chia-Yu Li, Hung-Ju Chien, T. Ying","doi":"10.1109/ISNE.2016.7543277","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543277","url":null,"abstract":"The stand-by current (Isb) performance is impacted by the failure of Cu interconnects due to Cu extrusion forming Cu-loss. This paper provides the solution to overcome the formation of Cu-loss without modifying via etching reactant to keep the capability of via etching tuning. Cu-loss strongly depends on the existence of Cu-F produced by via etching process. By inserting the NH3 flush step, Cu-F is completely removed. Moreover, 5 times the queue time extension is achieved. The Isb failure by Cu-loss is obviously exterminated.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128171372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543384
Yu-Tzu Wang, Yu-Wei Wang, Hsien-Ming Wang
The system is provided with humanized user interface and the function of facial recognition, which was completed through the cooperation with the Department of Special Education. In order to design and produce Jacky, this system (Figure 3), by ourselves, we actually found out the situation and needs of children with special education. The main function of Jacky (intelligent robot) is to track the face of subject target and then rating how much the subject pay attention to class. we had already finished the commissioning of the system on 9 subject respectively belong to 4 elementary schools, and this research had won the first place of Bio-Medical Electronics Education Consortium 2016 competition. Hope that this research would provide positive effects to autistic children, and help special education teachers on teaching further.
{"title":"Intelligent robotic applied to social development assistant teaching system of autistic children","authors":"Yu-Tzu Wang, Yu-Wei Wang, Hsien-Ming Wang","doi":"10.1109/ISNE.2016.7543384","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543384","url":null,"abstract":"The system is provided with humanized user interface and the function of facial recognition, which was completed through the cooperation with the Department of Special Education. In order to design and produce Jacky, this system (Figure 3), by ourselves, we actually found out the situation and needs of children with special education. The main function of Jacky (intelligent robot) is to track the face of subject target and then rating how much the subject pay attention to class. we had already finished the commissioning of the system on 9 subject respectively belong to 4 elementary schools, and this research had won the first place of Bio-Medical Electronics Education Consortium 2016 competition. Hope that this research would provide positive effects to autistic children, and help special education teachers on teaching further.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"05 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127434427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543365
Shushu Wei, X. Gu, Fule Li, Zhihua Wang
This paper presents an 11-bit 250MS/s subrange SAR ADC. The subrange SAR ADC in this paper consists of coarse conversions of 4-bit flash ADC and fine conversions of 8-bit SAR ADC, which fully combines high speed of flash ADC and low power consumption of SAR ADC. The design is fabricated in a 40nm low-leakage process, and the core area is 0.018mm2. The post layout simulation achieves an ENOB of 9.99 bits at Nyquist input and consumes 1.5mW from 1.1V supply, leading to a FOM of 5.86fJ/conv-step.
{"title":"An 11-bit 250MS/s subrange-SAR ADC in 40nm CMOS","authors":"Shushu Wei, X. Gu, Fule Li, Zhihua Wang","doi":"10.1109/ISNE.2016.7543365","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543365","url":null,"abstract":"This paper presents an 11-bit 250MS/s subrange SAR ADC. The subrange SAR ADC in this paper consists of coarse conversions of 4-bit flash ADC and fine conversions of 8-bit SAR ADC, which fully combines high speed of flash ADC and low power consumption of SAR ADC. The design is fabricated in a 40nm low-leakage process, and the core area is 0.018mm2. The post layout simulation achieves an ENOB of 9.99 bits at Nyquist input and consumes 1.5mW from 1.1V supply, leading to a FOM of 5.86fJ/conv-step.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127369460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543338
Jhong-Jyun Cai, H. X. Chen, Y. L. Guan, S. Chou, E. Jeng
The Surface Acoustic Wave (SAW) sensor technology using piezoelectric material and surface interdigital electrodes are realized as a 2-port oscillator. To improve the selectivity and sensitivity, three polymers are individually coated onto the SAW oscillators to detect organic vapors. The vapor-sensing capability is evaluated based on a 4-SAW array scheme wherein four kinds of flammable vapor like propylene, ether, butanone and benzene are under tested with polymer films including poly-vinylphenol (PVP), polystyrene (PS) and Ethyl Carbamate (EC). After obtaining the experimental result of vapor sensing, the fingerprint of their sensing characteristics can be successfully demonstrated for vapor recognition application.
{"title":"Study on the polymer-coated Surface Acoustic Wave sensors for organic vapor detection","authors":"Jhong-Jyun Cai, H. X. Chen, Y. L. Guan, S. Chou, E. Jeng","doi":"10.1109/ISNE.2016.7543338","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543338","url":null,"abstract":"The Surface Acoustic Wave (SAW) sensor technology using piezoelectric material and surface interdigital electrodes are realized as a 2-port oscillator. To improve the selectivity and sensitivity, three polymers are individually coated onto the SAW oscillators to detect organic vapors. The vapor-sensing capability is evaluated based on a 4-SAW array scheme wherein four kinds of flammable vapor like propylene, ether, butanone and benzene are under tested with polymer films including poly-vinylphenol (PVP), polystyrene (PS) and Ethyl Carbamate (EC). After obtaining the experimental result of vapor sensing, the fingerprint of their sensing characteristics can be successfully demonstrated for vapor recognition application.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130765220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543325
Thoai Phu Vo, N. Q. Anh
This study introduces an innovative multi-chip white LED (MCW-LEDs) that exploits a newly synthesized compound combining red Y2O3:Eu3+ with the in-cup phosphor package. The principal advantages of this solution is to enhance the color rendering index (CRI) of MCW-LEDs that have the correlated color temperature of 8500 K to a greater value than 84. In addition, impact of this red-color-adding approach on the light attenuation through silicone lens is also demonstrated using Beer-Lambert law.
{"title":"Effect of Y2O3:Eu3+ phosphor powder size on the performance of white LED lamp","authors":"Thoai Phu Vo, N. Q. Anh","doi":"10.1109/ISNE.2016.7543325","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543325","url":null,"abstract":"This study introduces an innovative multi-chip white LED (MCW-LEDs) that exploits a newly synthesized compound combining red Y2O3:Eu3+ with the in-cup phosphor package. The principal advantages of this solution is to enhance the color rendering index (CRI) of MCW-LEDs that have the correlated color temperature of 8500 K to a greater value than 84. In addition, impact of this red-color-adding approach on the light attenuation through silicone lens is also demonstrated using Beer-Lambert law.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123393514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543407
Yunpu Hu, Songping Mai, Xiang Xie
A hardware structure for general-purpose imperceptible structured light applications is proposed. The hardware aims to provide a robust solution for the extraction of complementary imperceptible structured light method. For solving the complicated synchronizing problem between the camera and the projector, a closed circle feedback strategy is proposed. Furthermore, some sample applications are utilized for evaluating the performance of the proposed structure.
{"title":"A hardware design for imperceptible structured light application","authors":"Yunpu Hu, Songping Mai, Xiang Xie","doi":"10.1109/ISNE.2016.7543407","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543407","url":null,"abstract":"A hardware structure for general-purpose imperceptible structured light applications is proposed. The hardware aims to provide a robust solution for the extraction of complementary imperceptible structured light method. For solving the complicated synchronizing problem between the camera and the projector, a closed circle feedback strategy is proposed. Furthermore, some sample applications are utilized for evaluating the performance of the proposed structure.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122987562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543371
Daxiang Li, K. Pun
This paper presents a 3rd order continuous-time Delta-Sigma modulator with a tri-level quantizer, which provides 3-dB reduction of quantization noise without dynamic element matching (DEM). The tri-level DAC linearity is analyzed and it shows that a highly linear tri-level DAC can be realized in fully-differential active-RC Delta-Sigma modulator. The performance of the tri-level continuous-time Delta-Sigma modulator has been verified through simulations using a standard 0.18-μm CMOS process. It achieves 81-dB SNDR at 3.2-MS/s sampling rate and consumes 1.14-μW power with ideal amplifier.
{"title":"A 25-kHz 3rd-order continuous-time Delta-Sigma modulator using tri-level quantizer","authors":"Daxiang Li, K. Pun","doi":"10.1109/ISNE.2016.7543371","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543371","url":null,"abstract":"This paper presents a 3rd order continuous-time Delta-Sigma modulator with a tri-level quantizer, which provides 3-dB reduction of quantization noise without dynamic element matching (DEM). The tri-level DAC linearity is analyzed and it shows that a highly linear tri-level DAC can be realized in fully-differential active-RC Delta-Sigma modulator. The performance of the tri-level continuous-time Delta-Sigma modulator has been verified through simulations using a standard 0.18-μm CMOS process. It achieves 81-dB SNDR at 3.2-MS/s sampling rate and consumes 1.14-μW power with ideal amplifier.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121027452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543408
Preetpal Singh, Chao-Sung Lai, C. Tan
Micro etched graphene is used to reduce the lattice mismatch as well as thermal mismatch between GaN and sapphire. 3 layers of graphene has shown to be more promising candidate as a buffer layer then monolayer graphene in improving the crystal quality of GaN on sapphire.
{"title":"Graphene as a buffer layer for high quality GaN deposition on substrates in electronics","authors":"Preetpal Singh, Chao-Sung Lai, C. Tan","doi":"10.1109/ISNE.2016.7543408","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543408","url":null,"abstract":"Micro etched graphene is used to reduce the lattice mismatch as well as thermal mismatch between GaN and sapphire. 3 layers of graphene has shown to be more promising candidate as a buffer layer then monolayer graphene in improving the crystal quality of GaN on sapphire.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123873998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543295
X. Li, C. Leung, K. Lin, M. Chan, P. Pong
The coercivity (Hc) and switching field (Hsw) of free layers increase remarkably with shrinking size, which reduces the sensitivity of spintronic devices. Conetic-alloy-based synthetic ferrimagnetic (SyF) trilayers are proposed to show reduced Hc and Hsw than single-layer in nanodots. The investigation on the thickness dependence reveals linear reliance of Hc and Hsw on amplification factor. Hc and Hsw are further reduced after field annealing at 200 °C. This work provides an approach to reduce the Hc and Hsw in nanomagnets.
{"title":"Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots","authors":"X. Li, C. Leung, K. Lin, M. Chan, P. Pong","doi":"10.1109/ISNE.2016.7543295","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543295","url":null,"abstract":"The coercivity (H<sub>c</sub>) and switching field (H<sub>sw</sub>) of free layers increase remarkably with shrinking size, which reduces the sensitivity of spintronic devices. Conetic-alloy-based synthetic ferrimagnetic (SyF) trilayers are proposed to show reduced H<sub>c</sub> and H<sub>sw</sub> than single-layer in nanodots. The investigation on the thickness dependence reveals linear reliance of H<sub>c</sub> and H<sub>sw</sub> on amplification factor. H<sub>c</sub> and H<sub>sw</sub> are further reduced after field annealing at 200 °C. This work provides an approach to reduce the H<sub>c</sub> and H<sub>sw</sub> in nanomagnets.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122395844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543313
Jieping Xin, C. Chang, Chih-han Hsueh, Jyhfu Lee, Jin‐Ming Chen, Hao-Hsiung Lin, N. Lu, I. Ferguson, Yongjing Guan, L. Wan, Qingyi Yang, Z. Feng
X-ray absorption fine structure has been used to study the electronic structure, and bond length of ZnO thin films grown on sapphire and Si substrates by metalorganic chemical vapor deposition. X-ray absorption near edge structure (XANES) of O and Zn K-edge were shown, and a detailed analysis of extended x-ray absorption fine structure (EXAFS) of Zn K-edge indicates that difference substrates results in the contraction of Zn-O bond length.
{"title":"X-ray absorption fine structure of ZnO thin film on Si and sapphire grown by MOCVD","authors":"Jieping Xin, C. Chang, Chih-han Hsueh, Jyhfu Lee, Jin‐Ming Chen, Hao-Hsiung Lin, N. Lu, I. Ferguson, Yongjing Guan, L. Wan, Qingyi Yang, Z. Feng","doi":"10.1109/ISNE.2016.7543313","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543313","url":null,"abstract":"X-ray absorption fine structure has been used to study the electronic structure, and bond length of ZnO thin films grown on sapphire and Si substrates by metalorganic chemical vapor deposition. X-ray absorption near edge structure (XANES) of O and Zn K-edge were shown, and a detailed analysis of extended x-ray absorption fine structure (EXAFS) of Zn K-edge indicates that difference substrates results in the contraction of Zn-O bond length.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122427922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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