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2016 5th International Symposium on Next-Generation Electronics (ISNE)最新文献

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Using the NH3 flush step to prevent Cu extrusion for improving stand-by current performance for 28nm-node Cu interconnect and beyond 采用NH3冲洗步骤防止Cu挤压,提高28nm节点Cu互连及以后的待机电流性能
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543277
C. Lai, Y. Lu, Wei Lin Wang, Chia-Yu Li, Hung-Ju Chien, T. Ying
The stand-by current (Isb) performance is impacted by the failure of Cu interconnects due to Cu extrusion forming Cu-loss. This paper provides the solution to overcome the formation of Cu-loss without modifying via etching reactant to keep the capability of via etching tuning. Cu-loss strongly depends on the existence of Cu-F produced by via etching process. By inserting the NH3 flush step, Cu-F is completely removed. Moreover, 5 times the queue time extension is achieved. The Isb failure by Cu-loss is obviously exterminated.
由于Cu挤压形成Cu损耗而导致的Cu互连失效影响了待机电流(Isb)性能。本文提出了在不改变蚀刻反应物的情况下克服铜损耗形成的解决方案,以保持蚀刻调谐的能力。铜的损耗很大程度上取决于蚀刻过程中产生的Cu-F的存在。通过插入NH3冲洗步骤,Cu-F被完全去除。此外,还实现了5倍的队列时间延长。铜损失导致的Isb失效明显消除。
{"title":"Using the NH3 flush step to prevent Cu extrusion for improving stand-by current performance for 28nm-node Cu interconnect and beyond","authors":"C. Lai, Y. Lu, Wei Lin Wang, Chia-Yu Li, Hung-Ju Chien, T. Ying","doi":"10.1109/ISNE.2016.7543277","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543277","url":null,"abstract":"The stand-by current (Isb) performance is impacted by the failure of Cu interconnects due to Cu extrusion forming Cu-loss. This paper provides the solution to overcome the formation of Cu-loss without modifying via etching reactant to keep the capability of via etching tuning. Cu-loss strongly depends on the existence of Cu-F produced by via etching process. By inserting the NH3 flush step, Cu-F is completely removed. Moreover, 5 times the queue time extension is achieved. The Isb failure by Cu-loss is obviously exterminated.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128171372","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Intelligent robotic applied to social development assistant teaching system of autistic children 智能机器人在自闭症儿童社会发展辅助教学系统中的应用
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543384
Yu-Tzu Wang, Yu-Wei Wang, Hsien-Ming Wang
The system is provided with humanized user interface and the function of facial recognition, which was completed through the cooperation with the Department of Special Education. In order to design and produce Jacky, this system (Figure 3), by ourselves, we actually found out the situation and needs of children with special education. The main function of Jacky (intelligent robot) is to track the face of subject target and then rating how much the subject pay attention to class. we had already finished the commissioning of the system on 9 subject respectively belong to 4 elementary schools, and this research had won the first place of Bio-Medical Electronics Education Consortium 2016 competition. Hope that this research would provide positive effects to autistic children, and help special education teachers on teaching further.
该系统具有人性化的用户界面和人脸识别功能,是与特殊教育处合作完成的。为了设计和制作Jacky这个系统(图3),我们自己实际了解了特殊教育儿童的情况和需求。Jacky(智能机器人)的主要功能是跟踪受试者目标的面部,然后评估受试者对课堂的关注程度。我们已经完成了4所小学9个科目的系统调试,该研究获得了2016年生物医学电子教育联盟竞赛第一名。希望本研究能对自闭症儿童产生积极的影响,并对特殊教育教师的进一步教学有所帮助。
{"title":"Intelligent robotic applied to social development assistant teaching system of autistic children","authors":"Yu-Tzu Wang, Yu-Wei Wang, Hsien-Ming Wang","doi":"10.1109/ISNE.2016.7543384","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543384","url":null,"abstract":"The system is provided with humanized user interface and the function of facial recognition, which was completed through the cooperation with the Department of Special Education. In order to design and produce Jacky, this system (Figure 3), by ourselves, we actually found out the situation and needs of children with special education. The main function of Jacky (intelligent robot) is to track the face of subject target and then rating how much the subject pay attention to class. we had already finished the commissioning of the system on 9 subject respectively belong to 4 elementary schools, and this research had won the first place of Bio-Medical Electronics Education Consortium 2016 competition. Hope that this research would provide positive effects to autistic children, and help special education teachers on teaching further.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"05 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127434427","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
An 11-bit 250MS/s subrange-SAR ADC in 40nm CMOS 一个11位250MS/s子范围sar ADC在40nm CMOS
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543365
Shushu Wei, X. Gu, Fule Li, Zhihua Wang
This paper presents an 11-bit 250MS/s subrange SAR ADC. The subrange SAR ADC in this paper consists of coarse conversions of 4-bit flash ADC and fine conversions of 8-bit SAR ADC, which fully combines high speed of flash ADC and low power consumption of SAR ADC. The design is fabricated in a 40nm low-leakage process, and the core area is 0.018mm2. The post layout simulation achieves an ENOB of 9.99 bits at Nyquist input and consumes 1.5mW from 1.1V supply, leading to a FOM of 5.86fJ/conv-step.
本文提出了一种11位250MS/s子范围SAR ADC。本文的子量程SAR ADC由4位flash ADC的粗转换和8位SAR ADC的细转换组成,充分结合了flash ADC的高速和SAR ADC的低功耗。本设计采用40nm低漏工艺制造,核心面积为0.018mm2。后置布局仿真在Nyquist输入下实现了9.99位的ENOB,从1.1V电源消耗1.5mW,导致FOM为5.86fJ/反步。
{"title":"An 11-bit 250MS/s subrange-SAR ADC in 40nm CMOS","authors":"Shushu Wei, X. Gu, Fule Li, Zhihua Wang","doi":"10.1109/ISNE.2016.7543365","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543365","url":null,"abstract":"This paper presents an 11-bit 250MS/s subrange SAR ADC. The subrange SAR ADC in this paper consists of coarse conversions of 4-bit flash ADC and fine conversions of 8-bit SAR ADC, which fully combines high speed of flash ADC and low power consumption of SAR ADC. The design is fabricated in a 40nm low-leakage process, and the core area is 0.018mm2. The post layout simulation achieves an ENOB of 9.99 bits at Nyquist input and consumes 1.5mW from 1.1V supply, leading to a FOM of 5.86fJ/conv-step.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127369460","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study on the polymer-coated Surface Acoustic Wave sensors for organic vapor detection 有机蒸汽检测用聚合物包覆表面声波传感器的研究
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543338
Jhong-Jyun Cai, H. X. Chen, Y. L. Guan, S. Chou, E. Jeng
The Surface Acoustic Wave (SAW) sensor technology using piezoelectric material and surface interdigital electrodes are realized as a 2-port oscillator. To improve the selectivity and sensitivity, three polymers are individually coated onto the SAW oscillators to detect organic vapors. The vapor-sensing capability is evaluated based on a 4-SAW array scheme wherein four kinds of flammable vapor like propylene, ether, butanone and benzene are under tested with polymer films including poly-vinylphenol (PVP), polystyrene (PS) and Ethyl Carbamate (EC). After obtaining the experimental result of vapor sensing, the fingerprint of their sensing characteristics can be successfully demonstrated for vapor recognition application.
利用压电材料和表面数字间电极实现了表面声波传感器技术。为了提高选择性和灵敏度,将三种聚合物分别涂覆在SAW振荡器上以检测有机蒸汽。基于4-SAW阵列方案,对丙烯、乙醚、丁酮和苯等四种可燃蒸汽进行了测试,其中包括聚乙烯酚(PVP)、聚苯乙烯(PS)和氨基甲酸乙酯(EC)聚合物薄膜。在获得蒸汽传感实验结果后,其传感特征指纹可以成功地用于蒸汽识别应用。
{"title":"Study on the polymer-coated Surface Acoustic Wave sensors for organic vapor detection","authors":"Jhong-Jyun Cai, H. X. Chen, Y. L. Guan, S. Chou, E. Jeng","doi":"10.1109/ISNE.2016.7543338","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543338","url":null,"abstract":"The Surface Acoustic Wave (SAW) sensor technology using piezoelectric material and surface interdigital electrodes are realized as a 2-port oscillator. To improve the selectivity and sensitivity, three polymers are individually coated onto the SAW oscillators to detect organic vapors. The vapor-sensing capability is evaluated based on a 4-SAW array scheme wherein four kinds of flammable vapor like propylene, ether, butanone and benzene are under tested with polymer films including poly-vinylphenol (PVP), polystyrene (PS) and Ethyl Carbamate (EC). After obtaining the experimental result of vapor sensing, the fingerprint of their sensing characteristics can be successfully demonstrated for vapor recognition application.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130765220","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Effect of Y2O3:Eu3+ phosphor powder size on the performance of white LED lamp Y2O3:Eu3+荧光粉粒度对白光LED灯性能的影响
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543325
Thoai Phu Vo, N. Q. Anh
This study introduces an innovative multi-chip white LED (MCW-LEDs) that exploits a newly synthesized compound combining red Y2O3:Eu3+ with the in-cup phosphor package. The principal advantages of this solution is to enhance the color rendering index (CRI) of MCW-LEDs that have the correlated color temperature of 8500 K to a greater value than 84. In addition, impact of this red-color-adding approach on the light attenuation through silicone lens is also demonstrated using Beer-Lambert law.
本研究介绍了一种创新的多芯片白光LED (mcw -LED),该LED利用了一种新合成的化合物,将红色Y2O3:Eu3+与杯内荧光粉封装结合在一起。该方案的主要优点是将相关色温为8500 K的mcw - led的显色指数(CRI)提高到大于84。此外,还利用Beer-Lambert定律证明了这种加红方式对硅酮透镜光衰减的影响。
{"title":"Effect of Y2O3:Eu3+ phosphor powder size on the performance of white LED lamp","authors":"Thoai Phu Vo, N. Q. Anh","doi":"10.1109/ISNE.2016.7543325","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543325","url":null,"abstract":"This study introduces an innovative multi-chip white LED (MCW-LEDs) that exploits a newly synthesized compound combining red Y2O3:Eu3+ with the in-cup phosphor package. The principal advantages of this solution is to enhance the color rendering index (CRI) of MCW-LEDs that have the correlated color temperature of 8500 K to a greater value than 84. In addition, impact of this red-color-adding approach on the light attenuation through silicone lens is also demonstrated using Beer-Lambert law.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123393514","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A hardware design for imperceptible structured light application 一种用于不可察觉结构光应用的硬件设计
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543407
Yunpu Hu, Songping Mai, Xiang Xie
A hardware structure for general-purpose imperceptible structured light applications is proposed. The hardware aims to provide a robust solution for the extraction of complementary imperceptible structured light method. For solving the complicated synchronizing problem between the camera and the projector, a closed circle feedback strategy is proposed. Furthermore, some sample applications are utilized for evaluating the performance of the proposed structure.
提出了一种适用于通用型微结构光应用的硬件结构。硬件的目的是为互补不可见结构光的提取方法提供一个鲁棒的解决方案。针对摄像机与放映机之间复杂的同步问题,提出了一种闭环反馈策略。此外,还利用一些示例应用来评估所提出的结构的性能。
{"title":"A hardware design for imperceptible structured light application","authors":"Yunpu Hu, Songping Mai, Xiang Xie","doi":"10.1109/ISNE.2016.7543407","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543407","url":null,"abstract":"A hardware structure for general-purpose imperceptible structured light applications is proposed. The hardware aims to provide a robust solution for the extraction of complementary imperceptible structured light method. For solving the complicated synchronizing problem between the camera and the projector, a closed circle feedback strategy is proposed. Furthermore, some sample applications are utilized for evaluating the performance of the proposed structure.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122987562","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A 25-kHz 3rd-order continuous-time Delta-Sigma modulator using tri-level quantizer 一种采用三电平量化器的25khz三阶连续δ - σ调制器
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543371
Daxiang Li, K. Pun
This paper presents a 3rd order continuous-time Delta-Sigma modulator with a tri-level quantizer, which provides 3-dB reduction of quantization noise without dynamic element matching (DEM). The tri-level DAC linearity is analyzed and it shows that a highly linear tri-level DAC can be realized in fully-differential active-RC Delta-Sigma modulator. The performance of the tri-level continuous-time Delta-Sigma modulator has been verified through simulations using a standard 0.18-μm CMOS process. It achieves 81-dB SNDR at 3.2-MS/s sampling rate and consumes 1.14-μW power with ideal amplifier.
本文提出了一种带三电平量化器的三阶连续时间Delta-Sigma调制器,该调制器在不需要动态单元匹配(DEM)的情况下可将量化噪声降低3db。分析了三电平DAC的线性度,表明在全差分有源rc δ - σ调制器中可以实现高度线性的三电平DAC。采用标准的0.18 μm CMOS工艺对三电平连续时间Delta-Sigma调制器的性能进行了仿真验证。在3.2 ms /s的采样率下实现81 db的SNDR,理想放大器功耗为1.14 μ w。
{"title":"A 25-kHz 3rd-order continuous-time Delta-Sigma modulator using tri-level quantizer","authors":"Daxiang Li, K. Pun","doi":"10.1109/ISNE.2016.7543371","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543371","url":null,"abstract":"This paper presents a 3rd order continuous-time Delta-Sigma modulator with a tri-level quantizer, which provides 3-dB reduction of quantization noise without dynamic element matching (DEM). The tri-level DAC linearity is analyzed and it shows that a highly linear tri-level DAC can be realized in fully-differential active-RC Delta-Sigma modulator. The performance of the tri-level continuous-time Delta-Sigma modulator has been verified through simulations using a standard 0.18-μm CMOS process. It achieves 81-dB SNDR at 3.2-MS/s sampling rate and consumes 1.14-μW power with ideal amplifier.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121027452","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Graphene as a buffer layer for high quality GaN deposition on substrates in electronics 石墨烯作为电子衬底上高质量氮化镓沉积的缓冲层
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543408
Preetpal Singh, Chao-Sung Lai, C. Tan
Micro etched graphene is used to reduce the lattice mismatch as well as thermal mismatch between GaN and sapphire. 3 layers of graphene has shown to be more promising candidate as a buffer layer then monolayer graphene in improving the crystal quality of GaN on sapphire.
微蚀刻石墨烯用于减少氮化镓和蓝宝石之间的晶格失配以及热失配。三层石墨烯作为缓冲层比单层石墨烯更有希望改善蓝宝石上氮化镓的晶体质量。
{"title":"Graphene as a buffer layer for high quality GaN deposition on substrates in electronics","authors":"Preetpal Singh, Chao-Sung Lai, C. Tan","doi":"10.1109/ISNE.2016.7543408","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543408","url":null,"abstract":"Micro etched graphene is used to reduce the lattice mismatch as well as thermal mismatch between GaN and sapphire. 3 layers of graphene has shown to be more promising candidate as a buffer layer then monolayer graphene in improving the crystal quality of GaN on sapphire.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123873998","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots 锥形合金基合成铁磁纳米点的降低矫顽力和开关场
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543295
X. Li, C. Leung, K. Lin, M. Chan, P. Pong
The coercivity (Hc) and switching field (Hsw) of free layers increase remarkably with shrinking size, which reduces the sensitivity of spintronic devices. Conetic-alloy-based synthetic ferrimagnetic (SyF) trilayers are proposed to show reduced Hc and Hsw than single-layer in nanodots. The investigation on the thickness dependence reveals linear reliance of Hc and Hsw on amplification factor. Hc and Hsw are further reduced after field annealing at 200 °C. This work provides an approach to reduce the Hc and Hsw in nanomagnets.
自由层的矫顽力(Hc)和开关场(Hsw)随尺寸的减小而显著增大,从而降低了自旋电子器件的灵敏度。提出了一种基于contic合金的合成铁磁(SyF)三层,在纳米点中表现出比单层更低的Hc和Hsw。对厚度依赖性的研究表明,Hc和Hsw与放大因子呈线性关系。在200℃现场退火后,Hc和Hsw进一步降低。本研究提供了一种降低纳米磁体中Hc和Hsw的方法。
{"title":"Reduced magnetic coercivity and switching field in conetic-alloy-based synthetic-ferrimagnetic nanodots","authors":"X. Li, C. Leung, K. Lin, M. Chan, P. Pong","doi":"10.1109/ISNE.2016.7543295","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543295","url":null,"abstract":"The coercivity (H<sub>c</sub>) and switching field (H<sub>sw</sub>) of free layers increase remarkably with shrinking size, which reduces the sensitivity of spintronic devices. Conetic-alloy-based synthetic ferrimagnetic (SyF) trilayers are proposed to show reduced H<sub>c</sub> and H<sub>sw</sub> than single-layer in nanodots. The investigation on the thickness dependence reveals linear reliance of H<sub>c</sub> and H<sub>sw</sub> on amplification factor. H<sub>c</sub> and H<sub>sw</sub> are further reduced after field annealing at 200 °C. This work provides an approach to reduce the H<sub>c</sub> and H<sub>sw</sub> in nanomagnets.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122395844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
X-ray absorption fine structure of ZnO thin film on Si and sapphire grown by MOCVD MOCVD生长在Si和蓝宝石上ZnO薄膜的x射线吸收精细结构
Pub Date : 2016-05-04 DOI: 10.1109/ISNE.2016.7543313
Jieping Xin, C. Chang, Chih-han Hsueh, Jyhfu Lee, Jin‐Ming Chen, Hao-Hsiung Lin, N. Lu, I. Ferguson, Yongjing Guan, L. Wan, Qingyi Yang, Z. Feng
X-ray absorption fine structure has been used to study the electronic structure, and bond length of ZnO thin films grown on sapphire and Si substrates by metalorganic chemical vapor deposition. X-ray absorption near edge structure (XANES) of O and Zn K-edge were shown, and a detailed analysis of extended x-ray absorption fine structure (EXAFS) of Zn K-edge indicates that difference substrates results in the contraction of Zn-O bond length.
采用x射线吸收精细结构研究了金属有机化学气相沉积法在蓝宝石和硅衬底上生长的ZnO薄膜的电子结构和键长。结果表明,不同的衬底会导致Zn-O键长收缩,而Zn- K-edge的扩展x射线吸收精细结构(EXAFS)则会导致Zn-O键长收缩。
{"title":"X-ray absorption fine structure of ZnO thin film on Si and sapphire grown by MOCVD","authors":"Jieping Xin, C. Chang, Chih-han Hsueh, Jyhfu Lee, Jin‐Ming Chen, Hao-Hsiung Lin, N. Lu, I. Ferguson, Yongjing Guan, L. Wan, Qingyi Yang, Z. Feng","doi":"10.1109/ISNE.2016.7543313","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543313","url":null,"abstract":"X-ray absorption fine structure has been used to study the electronic structure, and bond length of ZnO thin films grown on sapphire and Si substrates by metalorganic chemical vapor deposition. X-ray absorption near edge structure (XANES) of O and Zn K-edge were shown, and a detailed analysis of extended x-ray absorption fine structure (EXAFS) of Zn K-edge indicates that difference substrates results in the contraction of Zn-O bond length.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"223 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122427922","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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2016 5th International Symposium on Next-Generation Electronics (ISNE)
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