This experiment designed and fabricated the controller of a brushless DC motor which equips with Hall sensors. The motor driver was fabricated with Microchip dsPIC30F4011 chip which read feedback signals from the Hall sensors. The chip connected to the three-phase six-arm switching inverter circuit then connected to the motor. In such a way the user can drive the motor by position control using the method of six-step square wave vector control. But this conventional control method can just reach a torque of 60 degree power angle. In this study the vector synthesis method was employed to produce a maximum torque of 90 degree power angle. This method can decrease the kinetic energy loss of torque. From the experimental results, it is found that with 90 degree power angle the motor power consumption decreased, torque enhanced and rotation speed increased when compared with 60 degree power angle.
{"title":"Energy-efficient and torque enhanced brushless DC motor controller","authors":"Chang-Chi Lee, Gwo-Jen Chiou, Jeng‐Yue Chen, Yao-Chun Tung, Shung-Hong Lu, F. Juang, Shengzhi Chen","doi":"10.1109/ISNE.2016.7543397","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543397","url":null,"abstract":"This experiment designed and fabricated the controller of a brushless DC motor which equips with Hall sensors. The motor driver was fabricated with Microchip dsPIC30F4011 chip which read feedback signals from the Hall sensors. The chip connected to the three-phase six-arm switching inverter circuit then connected to the motor. In such a way the user can drive the motor by position control using the method of six-step square wave vector control. But this conventional control method can just reach a torque of 60 degree power angle. In this study the vector synthesis method was employed to produce a maximum torque of 90 degree power angle. This method can decrease the kinetic energy loss of torque. From the experimental results, it is found that with 90 degree power angle the motor power consumption decreased, torque enhanced and rotation speed increased when compared with 60 degree power angle.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114724308","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543290
Q. Lu, Y. Qi, Cezhou Zhao, Chun Zhao, Stephen Taylor, P. Chalker
Anomalous behaviors in capacitance-voltage (CV) characteristics are observed on MOS devices with ZrO2 and HfO2 oxides. The relative positions of forward and reverse CV traces measured by pulse technique are opposite to those obtained by LCR meter. This unusual phenomenon cannot be consistently explained by trapping/de-trapping of charges. A hypothesis related to interface dipoles is proposed to provide a possible explanation.
{"title":"Anomalous capacitance-voltage hysteresis in MOS devices with ZrO2 and HfO2 dielectrics","authors":"Q. Lu, Y. Qi, Cezhou Zhao, Chun Zhao, Stephen Taylor, P. Chalker","doi":"10.1109/ISNE.2016.7543290","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543290","url":null,"abstract":"Anomalous behaviors in capacitance-voltage (CV) characteristics are observed on MOS devices with ZrO2 and HfO2 oxides. The relative positions of forward and reverse CV traces measured by pulse technique are opposite to those obtained by LCR meter. This unusual phenomenon cannot be consistently explained by trapping/de-trapping of charges. A hypothesis related to interface dipoles is proposed to provide a possible explanation.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127015724","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543403
V. Filip, H. Wong, Wing-Shan Tam, C. Kok
A simple model of a hetero-structured cathode for electron field emission was developed in order to compare resonant and sequential electron field emission currents. These two components were simultaneously computed through an iterative process. The model assumes that a certain fraction of the batch of electrons that failed to resonantly transit the structure will end up in its quasi-bound states. It was found that, while various slope changes appear in both current-field characteristics, for the sequential tunneling emission, such features are merely interference effects occurring in the potential energy barrier, prior to the electron's transition in the quasi-bound states. Thus, various space charges develop in the structure and reacts back on both the sequential and the resonant parts of the current.
{"title":"Study of composite cathodes in electron field emission devices: Relative contributions of resonant and sequential tunneling","authors":"V. Filip, H. Wong, Wing-Shan Tam, C. Kok","doi":"10.1109/ISNE.2016.7543403","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543403","url":null,"abstract":"A simple model of a hetero-structured cathode for electron field emission was developed in order to compare resonant and sequential electron field emission currents. These two components were simultaneously computed through an iterative process. The model assumes that a certain fraction of the batch of electrons that failed to resonantly transit the structure will end up in its quasi-bound states. It was found that, while various slope changes appear in both current-field characteristics, for the sequential tunneling emission, such features are merely interference effects occurring in the potential energy barrier, prior to the electron's transition in the quasi-bound states. Thus, various space charges develop in the structure and reacts back on both the sequential and the resonant parts of the current.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"36 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124984987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543280
Wenqiang Luo, X. Wu, Fang-Yuan Yuan, Huaqiang Wu, L. Pan, Ning Deng
In this paper, a memristor with structure of Ag/ PEDOT:PSS/ Ta was fabricated and measured at room temperature. The conductance of the device decreased continuously as the consecutive negative voltage scanning. But for positive voltage sweeping, the conductance value reduced initially then increased, which was quite different from previous reported experimental results. The relaxation phenomenon was observed under the consecutive voltage pulses, which can be used to achieve a synaptic learning behavior. It is found that the PEDOT:PSS layer was critical for the special characteristics.
{"title":"Synaptic learning behavior based on a Ag/PEDOT:PSS/Ta memristor","authors":"Wenqiang Luo, X. Wu, Fang-Yuan Yuan, Huaqiang Wu, L. Pan, Ning Deng","doi":"10.1109/ISNE.2016.7543280","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543280","url":null,"abstract":"In this paper, a memristor with structure of Ag/ PEDOT:PSS/ Ta was fabricated and measured at room temperature. The conductance of the device decreased continuously as the consecutive negative voltage scanning. But for positive voltage sweeping, the conductance value reduced initially then increased, which was quite different from previous reported experimental results. The relaxation phenomenon was observed under the consecutive voltage pulses, which can be used to achieve a synaptic learning behavior. It is found that the PEDOT:PSS layer was critical for the special characteristics.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123549330","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543364
Meng-Lieh Sheu, Cheng-Han Wu
This work presents a 10-bit successive approximation ADC for low voltage and low power applications. The chip operating voltage is 0.6 V with single-ended rail-to-rail swing input signal. Binary-weighted multilayer sandwich capacitor array is used in the digital to analog converter employed in the ADC to reduce the overall capacitance value and power consumption effectively. The proposed ADC is designed with 0.18 μm CMOS process. The simulation results at 0.6 V supply voltage, 100 kS/s sampling rate, and 1.38 kHz rail-to-rail swing input, an SNDR of 60.4 dB is achieved with 0.43 μW power consumption. The FOM is 6.38 fJ per conversion step.
{"title":"A 6.38 fJ/conversion 0.6V 0.43μW 100 kS/s 10-bit successive approximation ADC","authors":"Meng-Lieh Sheu, Cheng-Han Wu","doi":"10.1109/ISNE.2016.7543364","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543364","url":null,"abstract":"This work presents a 10-bit successive approximation ADC for low voltage and low power applications. The chip operating voltage is 0.6 V with single-ended rail-to-rail swing input signal. Binary-weighted multilayer sandwich capacitor array is used in the digital to analog converter employed in the ADC to reduce the overall capacitance value and power consumption effectively. The proposed ADC is designed with 0.18 μm CMOS process. The simulation results at 0.6 V supply voltage, 100 kS/s sampling rate, and 1.38 kHz rail-to-rail swing input, an SNDR of 60.4 dB is achieved with 0.43 μW power consumption. The FOM is 6.38 fJ per conversion step.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"183 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133207102","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543372
P. V. Satya Challayya Naidu, Neeru Agarwal, Neeraj Agarwal
Comparator have important role in ADC as which generates valid signal to the clock generator as well as compares the DAC output. Speed and the resolution is determined by the comparator, so, it is most important part in the SAR ADC. Comparator act as input signal to the clock generator as well as the compares DAC output in SAR ADC. In this paper, the analysis of the different dynamic comparator and propose a better structure, which can run faster and provide more stable output signal than the traditional structures. Comparator is designed in 180nm CMOS technology and analyzed using Node analysis.
{"title":"Design & analysis of novel comparator without biasing for high performance application","authors":"P. V. Satya Challayya Naidu, Neeru Agarwal, Neeraj Agarwal","doi":"10.1109/ISNE.2016.7543372","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543372","url":null,"abstract":"Comparator have important role in ADC as which generates valid signal to the clock generator as well as compares the DAC output. Speed and the resolution is determined by the comparator, so, it is most important part in the SAR ADC. Comparator act as input signal to the clock generator as well as the compares DAC output in SAR ADC. In this paper, the analysis of the different dynamic comparator and propose a better structure, which can run faster and provide more stable output signal than the traditional structures. Comparator is designed in 180nm CMOS technology and analyzed using Node analysis.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131006667","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543328
Chao-Ting Chu, H. Chiang, Yung-Sheng Chang
This paper proposed clustering algorithms applied Gaussian basis function neural network compensator with fuzzy control for magnetic bearing system (MBS). The nonlinear MBS improved traditional bearing friction losses, and nonlinear system with fuzzy controller and neural network does not require precise MBS mathematical model. We used clustering algorithms which are fuzzy c-means and k-means adjusted Gaussian basis function in neural network. Finally, we used the Lyapunov stability to guarantee MBS convergence, and the experimental results shows proposed algorithm has satisfactory performance in MBS.
{"title":"Clustering algorithms applied Gaussian basis function neural network compensator with fuzzy control for magnetic bearing system","authors":"Chao-Ting Chu, H. Chiang, Yung-Sheng Chang","doi":"10.1109/ISNE.2016.7543328","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543328","url":null,"abstract":"This paper proposed clustering algorithms applied Gaussian basis function neural network compensator with fuzzy control for magnetic bearing system (MBS). The nonlinear MBS improved traditional bearing friction losses, and nonlinear system with fuzzy controller and neural network does not require precise MBS mathematical model. We used clustering algorithms which are fuzzy c-means and k-means adjusted Gaussian basis function in neural network. Finally, we used the Lyapunov stability to guarantee MBS convergence, and the experimental results shows proposed algorithm has satisfactory performance in MBS.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134613855","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543311
Xiao-bo Zhu, C. W. Liu, T.-H. Cheng
The fluctuation of Ga content in Cu(In, Ga)Se2 (CIGS) solar modules is investigated by 3-dimensional numerical simulation. The band gap of CIGS is increased by the increasing Ga content, and the residual compressive strain. Strain effect worsens the degradation of the power conversion efficiency of CIGS module in addition to Ga fluctuation. The intercell + intracell distributed fluctuation has the most significant degradation on power conversion efficiency.
{"title":"Strain-enhanced inhomogeneity effects on CIGS solar modules","authors":"Xiao-bo Zhu, C. W. Liu, T.-H. Cheng","doi":"10.1109/ISNE.2016.7543311","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543311","url":null,"abstract":"The fluctuation of Ga content in Cu(In, Ga)Se2 (CIGS) solar modules is investigated by 3-dimensional numerical simulation. The band gap of CIGS is increased by the increasing Ga content, and the residual compressive strain. Strain effect worsens the degradation of the power conversion efficiency of CIGS module in addition to Ga fluctuation. The intercell + intracell distributed fluctuation has the most significant degradation on power conversion efficiency.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"117 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124647189","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543330
Chao-Ting Chu, Yung-Sheng Chang, Yuan-Kai Wang
The paper proposed ultra-low power MSP432 microcontroller calculation for magnetic bearing system, and we design a PID-neural controller to control magnetic bearing position. Traditional bearing have many disadvantage that included rotor friction, rotor shake and lubricating oil be used. The magnetic bearing rotor was used magnetic levitation technology to improve traditional issue. This paper implemented MSP432 which is ARM cortex-M4F structure and low power consumption to design PID-neural controller control in magnetic bearing rotor position.
{"title":"Ultra low power MSP432 calculation for PID-neural control in magnetic bearing system","authors":"Chao-Ting Chu, Yung-Sheng Chang, Yuan-Kai Wang","doi":"10.1109/ISNE.2016.7543330","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543330","url":null,"abstract":"The paper proposed ultra-low power MSP432 microcontroller calculation for magnetic bearing system, and we design a PID-neural controller to control magnetic bearing position. Traditional bearing have many disadvantage that included rotor friction, rotor shake and lubricating oil be used. The magnetic bearing rotor was used magnetic levitation technology to improve traditional issue. This paper implemented MSP432 which is ARM cortex-M4F structure and low power consumption to design PID-neural controller control in magnetic bearing rotor position.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124073967","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543297
Xinyi Zhao, D. Jin, Wanrong Zhang, Xiao Wang, Yanling Guo, Di Wang
Based on the established thermal network of strained Si/SiGe HBT with segmented emitter, the effect of segment spacing and segment number on the peak temperature is studied. Increase both of segment spacing and segment number could lower the peak temperature, decrease the heating coupling factor, and hence improve the temperature uniformity. Furthermore, a novel strained-Si SiGe HBT with multi-segmented emitter and non-uniform segment spacing is proposed to further compensate the self-heating effect and the thermal coupling effect.
{"title":"Layout design of strained Si/SiGe HBT with segmented emitter to compensate the thermal effects","authors":"Xinyi Zhao, D. Jin, Wanrong Zhang, Xiao Wang, Yanling Guo, Di Wang","doi":"10.1109/ISNE.2016.7543297","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543297","url":null,"abstract":"Based on the established thermal network of strained Si/SiGe HBT with segmented emitter, the effect of segment spacing and segment number on the peak temperature is studied. Increase both of segment spacing and segment number could lower the peak temperature, decrease the heating coupling factor, and hence improve the temperature uniformity. Furthermore, a novel strained-Si SiGe HBT with multi-segmented emitter and non-uniform segment spacing is proposed to further compensate the self-heating effect and the thermal coupling effect.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127466375","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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