Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543320
Yi-Tsung Chang, Ching-Tsang Chang, Wei-Chih Huang, T. Horng
In electrophoretic deposition, the quality of the deposition is closely related to both the electrolyte and electric field intensity. This study involved modifying the traditional electrophoresis setup and adjusting the variables of an experiment to deposit higher quality graphene a non-conductive silicon substrate. With a DC bias of 30 V and a 1 wt% Al2 (SO4)3 electrolytic solutions, the highest amount of graphene and the lowest number of graphene defects can be obtained. The defect ratio ID/IG is approximately 0.95.
{"title":"Electrophoretic deposition of graphene growth in a nonconductive substrate","authors":"Yi-Tsung Chang, Ching-Tsang Chang, Wei-Chih Huang, T. Horng","doi":"10.1109/ISNE.2016.7543320","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543320","url":null,"abstract":"In electrophoretic deposition, the quality of the deposition is closely related to both the electrolyte and electric field intensity. This study involved modifying the traditional electrophoresis setup and adjusting the variables of an experiment to deposit higher quality graphene a non-conductive silicon substrate. With a DC bias of 30 V and a 1 wt% Al2 (SO4)3 electrolytic solutions, the highest amount of graphene and the lowest number of graphene defects can be obtained. The defect ratio ID/IG is approximately 0.95.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"363 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122837324","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543402
W. Cheng, Pi-Chieh Cheng, Xinlun Li
In this paper, we propose an adaptive page allocation and buffer management methodology for the hierarchical DRAM/PCRAM memory architecture. A small DRAM is used as cache of PCRAM memory to reduce leakage power consumption, and an adaptive page allocation scheme is used to make better utilization of the small DRAM capacity, such that conflict misses of DRAM are minimized under the multi-core architecture. Therefore, the number of write back to PCRAM and data migration between PCRAM and DRAM is obviously reduced. Experimental results show that our methodology is effective in improving both the energy consumption and access latency of PCRAM by 25%.
{"title":"Adaptive page allocation of DRAM/PCRAM hybrid memory architecture","authors":"W. Cheng, Pi-Chieh Cheng, Xinlun Li","doi":"10.1109/ISNE.2016.7543402","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543402","url":null,"abstract":"In this paper, we propose an adaptive page allocation and buffer management methodology for the hierarchical DRAM/PCRAM memory architecture. A small DRAM is used as cache of PCRAM memory to reduce leakage power consumption, and an adaptive page allocation scheme is used to make better utilization of the small DRAM capacity, such that conflict misses of DRAM are minimized under the multi-core architecture. Therefore, the number of write back to PCRAM and data migration between PCRAM and DRAM is obviously reduced. Experimental results show that our methodology is effective in improving both the energy consumption and access latency of PCRAM by 25%.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"408 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132000648","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543382
Surachoke Thanapitak, C. Sawigun
ISFET readout circuits based on the flipped voltage follower is proposed. The circuits operate at 0.8 V providing an ability to sense pH linearly from 1 to 13 with 44.5mV/pH sensitivity. In comparison with relevant literature, the proposed circuits are the most power-efficient.
{"title":"Flipped voltage follower ISFET readout circuits","authors":"Surachoke Thanapitak, C. Sawigun","doi":"10.1109/ISNE.2016.7543382","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543382","url":null,"abstract":"ISFET readout circuits based on the flipped voltage follower is proposed. The circuits operate at 0.8 V providing an ability to sense pH linearly from 1 to 13 with 44.5mV/pH sensitivity. In comparison with relevant literature, the proposed circuits are the most power-efficient.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134448779","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543381
D. Kim, Ching-Hwa Cheng
Minimally Invasive Surgery (MIS) is a current prevalent technique for surgical operations. Compared with traditional surgical methods, MIS can reduce the post-surgical recovery time, as well as the costs and pain patients endure as a result of surgery. It is therefore of interest to both doctors and patients. The major problem of MIS is there being a narrow field of vision. We have developed and validated a MIS Panoramic Endoscope (MISPE) [4] to provide doctors with broad fields of view. MISPE features a combination of image overlapping and image stitching. The panoramic image apparatus has two side-by-side endoscopic lenses that provide wide-angle inputs for image stitching. MISPE can provide doctors with panoramic images, so that doctors can easily discriminate the organ's positions between surgical operations. The two issues of concern of MISPE are the quality and speed of image stitching. However, the image stitching results of MISPE cannot be obtained by using the conventional SIFT[1], SURF[2], or ORB[3] algorithms. Therefore, this paper proposes few novel techniques to improve the image stitching performance of MISPE. Experimental results show that MISPE can enhance the image size by up to 150%. We also obtained 2X performance improvement in comparison with the conventional techniques.
{"title":"A panoramic stitching vision performance improvement technique for Minimally Invasive Surgery","authors":"D. Kim, Ching-Hwa Cheng","doi":"10.1109/ISNE.2016.7543381","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543381","url":null,"abstract":"Minimally Invasive Surgery (MIS) is a current prevalent technique for surgical operations. Compared with traditional surgical methods, MIS can reduce the post-surgical recovery time, as well as the costs and pain patients endure as a result of surgery. It is therefore of interest to both doctors and patients. The major problem of MIS is there being a narrow field of vision. We have developed and validated a MIS Panoramic Endoscope (MISPE) [4] to provide doctors with broad fields of view. MISPE features a combination of image overlapping and image stitching. The panoramic image apparatus has two side-by-side endoscopic lenses that provide wide-angle inputs for image stitching. MISPE can provide doctors with panoramic images, so that doctors can easily discriminate the organ's positions between surgical operations. The two issues of concern of MISPE are the quality and speed of image stitching. However, the image stitching results of MISPE cannot be obtained by using the conventional SIFT[1], SURF[2], or ORB[3] algorithms. Therefore, this paper proposes few novel techniques to improve the image stitching performance of MISPE. Experimental results show that MISPE can enhance the image size by up to 150%. We also obtained 2X performance improvement in comparison with the conventional techniques.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"191 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134368936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543317
Shih-Yun Huang, Pen-Cheng Wang
In this work, we used different PH value of Aniline-2-sulfonic acid solutions to prepare an aqueous dispersion of poly (3,4-ethylenedioxythiophene) (PEDOT). Besides, we used different concentrations, oxidizing agents, and solutions of the Aniline-2-sulfonic acid aqueous to manufacture the aqueous dispersion of PEDOT. According to this method, we evaluated a way which can make the aqueous of PEDOT dispersed in the solution. We also measured the sheet resistance, UV, FTIR, and SEM of the aqueous dispersion PEDOT. The applications of this product is to use in electrical and electronic device.
{"title":"Preparation poly (3,4-ethylenedioxythiophene) (PEDOT) by in different PH value solutions of polyaniline doped with Aniline-2-sulfonic acid","authors":"Shih-Yun Huang, Pen-Cheng Wang","doi":"10.1109/ISNE.2016.7543317","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543317","url":null,"abstract":"In this work, we used different PH value of Aniline-2-sulfonic acid solutions to prepare an aqueous dispersion of poly (3,4-ethylenedioxythiophene) (PEDOT). Besides, we used different concentrations, oxidizing agents, and solutions of the Aniline-2-sulfonic acid aqueous to manufacture the aqueous dispersion of PEDOT. According to this method, we evaluated a way which can make the aqueous of PEDOT dispersed in the solution. We also measured the sheet resistance, UV, FTIR, and SEM of the aqueous dispersion PEDOT. The applications of this product is to use in electrical and electronic device.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"153 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115121812","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543293
Yi-Ling Wei, H. X. Chen, S. Chou, E. Jeng
In this paper, we study the interface traps during program/erase (P/E) cycles. By using charge pumping measurement, the charge pumping currents (ICP) of the serial P/E cycled states are compared to the initial one. The ICP decreases after the programmed operation under a constant temperature within 5 P/E cycles. The observation on the recovery of the interface states has been attributed to the hot electron injection stress.
{"title":"On the interface recovery of SNOI devices during programming-erasing cycles","authors":"Yi-Ling Wei, H. X. Chen, S. Chou, E. Jeng","doi":"10.1109/ISNE.2016.7543293","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543293","url":null,"abstract":"In this paper, we study the interface traps during program/erase (P/E) cycles. By using charge pumping measurement, the charge pumping currents (ICP) of the serial P/E cycled states are compared to the initial one. The ICP decreases after the programmed operation under a constant temperature within 5 P/E cycles. The observation on the recovery of the interface states has been attributed to the hot electron injection stress.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114658365","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543394
J. Shie, Apisit Chittawanij, L. Hong, Chang-Jun Lai, Yun-Jr Lai, F. Juang, Pei-Hsun Yeh, Yu-Sheng Tsa
A hybrid approach integrating a Taguchi orthogonal table with an irregular design of experiments (DOE) method was proposed for selecting an optimal material structure of blue organic light emitting diodes in order to achieve multi-objective quality characteristics of devices. Analysis of variance (ANOVA) was adopted to identify significant factors before regression models were obtained. Finally, an optimal material structure was determined by maximizing a desirability function relating to selected critical quality characteristics including the driving voltage, the luminance, and luminance efficiency.
{"title":"Material structure selection of blue organic light emitting diodes utilizing a hybrid experimental design","authors":"J. Shie, Apisit Chittawanij, L. Hong, Chang-Jun Lai, Yun-Jr Lai, F. Juang, Pei-Hsun Yeh, Yu-Sheng Tsa","doi":"10.1109/ISNE.2016.7543394","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543394","url":null,"abstract":"A hybrid approach integrating a Taguchi orthogonal table with an irregular design of experiments (DOE) method was proposed for selecting an optimal material structure of blue organic light emitting diodes in order to achieve multi-objective quality characteristics of devices. Analysis of variance (ANOVA) was adopted to identify significant factors before regression models were obtained. Finally, an optimal material structure was determined by maximizing a desirability function relating to selected critical quality characteristics including the driving voltage, the luminance, and luminance efficiency.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123856099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543334
Shen-Che Huang, Tze-Ting Wang, T. Lu, Hsiang Chen
ZnO nanoscale structures were grown on the silver wire, utilizing the electro-hydrothermal method, which deposited to further grow flake-form with pellicle and floccule status via employing certain characterizations. The analysis reveals that ZnO nanoscale flake-form were successfully coated on Ag wire. Besides, the antibacterial testing of sample with ZnO nanoscale flake-form integrated on the polished silver wire may support future detection platforms.
{"title":"Antibacterial capability of ZnO-based nanostructures manipulated by flake-coated onto silver wires","authors":"Shen-Che Huang, Tze-Ting Wang, T. Lu, Hsiang Chen","doi":"10.1109/ISNE.2016.7543334","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543334","url":null,"abstract":"ZnO nanoscale structures were grown on the silver wire, utilizing the electro-hydrothermal method, which deposited to further grow flake-form with pellicle and floccule status via employing certain characterizations. The analysis reveals that ZnO nanoscale flake-form were successfully coated on Ag wire. Besides, the antibacterial testing of sample with ZnO nanoscale flake-form integrated on the polished silver wire may support future detection platforms.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123300018","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543327
W. Yeh, H. Moriyama
Single crystal Si bulk solar cells were fabricated by growing p+-Si film on n-type Si(100) substrate as a emitter layer by sputter epitaxy at 315°C for the first time. Internal quantum efficiency (IQE) at visible light wavelength was higher than 95%, resulting in a short circuit current of as high as 21 mA/cm2 even without surface texturing and anti-reflection films.
{"title":"DC sputter epitaxy of p+-emitters for fabrication of crystalline-Si solar cells","authors":"W. Yeh, H. Moriyama","doi":"10.1109/ISNE.2016.7543327","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543327","url":null,"abstract":"Single crystal Si bulk solar cells were fabricated by growing p+-Si film on n-type Si(100) substrate as a emitter layer by sputter epitaxy at 315°C for the first time. Internal quantum efficiency (IQE) at visible light wavelength was higher than 95%, resulting in a short circuit current of as high as 21 mA/cm2 even without surface texturing and anti-reflection films.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124305281","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-05-04DOI: 10.1109/ISNE.2016.7543386
Z. Feng, Xiaodong Jiang, Yueh-Chien Lee, H. Kuo, L. Wan
To explore the mechanism, breakthrough the current bottleneck and overcome the efficiency droop from green InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs). The photoluminescence properties and carrier dynamics of green InGaN/GaN MQW LEDs are investigated by temperature-dependent photoluminescence (PL) from 10 K to 300 K and time-resolved PL (TRPL) measurements at 10 K in our new-built lab. With increasing temperature, a blue shift of PL behavior is attributed to band-tail states formed in local potential minima resembling In-rich clusters. The energy-dependent TRPL experiments are measured at 10 K to study the carrier dynamics in the MQWs. The results show that the PL slow decays for the low-energy side are much slower than the high-energy side. The depth of carrier localization is obtained by fitting the reduced slow decay time with the emission energy increasing. All the results indicate that the PL peak is related to localized radiative recombination.
{"title":"Green light-emitting diodes with InGaN/GaN multiple quantum well structures: Time-resolved photoluminescence, emission dynamics and related studies","authors":"Z. Feng, Xiaodong Jiang, Yueh-Chien Lee, H. Kuo, L. Wan","doi":"10.1109/ISNE.2016.7543386","DOIUrl":"https://doi.org/10.1109/ISNE.2016.7543386","url":null,"abstract":"To explore the mechanism, breakthrough the current bottleneck and overcome the efficiency droop from green InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs). The photoluminescence properties and carrier dynamics of green InGaN/GaN MQW LEDs are investigated by temperature-dependent photoluminescence (PL) from 10 K to 300 K and time-resolved PL (TRPL) measurements at 10 K in our new-built lab. With increasing temperature, a blue shift of PL behavior is attributed to band-tail states formed in local potential minima resembling In-rich clusters. The energy-dependent TRPL experiments are measured at 10 K to study the carrier dynamics in the MQWs. The results show that the PL slow decays for the low-energy side are much slower than the high-energy side. The depth of carrier localization is obtained by fitting the reduced slow decay time with the emission energy increasing. All the results indicate that the PL peak is related to localized radiative recombination.","PeriodicalId":127324,"journal":{"name":"2016 5th International Symposium on Next-Generation Electronics (ISNE)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-05-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121562834","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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