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Aerosol-Jet Printed Transferable Millimeter-Wave Circuits 气溶胶喷射打印可转移毫米波电路
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-13 DOI: 10.1109/TCPMT.2024.3460655
Wesley Spain;John Papapolymerou;Prem Chahal;Matthew Hodek;John D. Albrecht
Printed millimeter-wave (mmW) electronics have been of high interest in the field of communications for some time now due to the potential ability to fabricate mmW systems that utilize 3-D heterogeneous integration (3DHI) to improve performance beyond traditional systems. In this article, a method for fabricating transferable mmW structures via aerosol-jet printing (AJP) is presented. A polydimethylsiloxane (PDMS) stamp-assisted liftoff procedure is developed to separate the printed part from a rigid printing support surface and apply it to an adhesive target surface. Several microstrip (MS) line structures are demonstrated to characterize the effect of stamp transfer on the RF performance of the printed circuits. The effects of printed vias on RF probe pads and shifts in the resonant frequencies of a Beatty standard line after transfer are considered and characterized using S-parameter measurements.
印刷毫米波(mmW)电子器件在通信领域受到高度关注已有一段时间,因为它具有制造毫米波系统的潜在能力,可利用三维异质集成(3DHI)提高性能,超越传统系统。本文介绍了一种通过气溶胶喷射打印(AJP)制造可转移毫米波结构的方法。开发了一种聚二甲基硅氧烷(PDMS)印章辅助升空程序,用于将打印部件从刚性打印支撑表面分离,并将其应用于粘合目标表面。演示了几种微带 (MS) 线路结构,以确定印章转移对印刷电路射频性能的影响。考虑了射频探针焊盘上印刷孔的影响以及转移后 Beatty 标准线路谐振频率的偏移,并使用 S 参数测量进行了表征。
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引用次数: 0
TechRxiv: Share Your Preprint Research With the World! TechRxiv:与世界分享您的预印本研究成果!
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-12 DOI: 10.1109/TCPMT.2024.3456649
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High-Selectivity Bandpass Filter-Integrated SPDT Switch Using Switchable Dual-Mode Hybrid Resonators 使用可切换双模混合谐振器的高选择性带通滤波器集成 SPDT 开关
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-12 DOI: 10.1109/TCPMT.2024.3459639
Na Ji;Guangxu Shen;Wenjie Feng;Quan Xue;Wenquan Che
This article proposes a high-selectivity bandpass filter-integrated single-pole double-throw (SPDT) switch based on switchable dual-mode hybrid resonators. To solve the intrinsic conflict between the high ON-state loss and high OFF-state suppression (OSS), a switchable dual-mode hybrid resonator with two resonant modes constructed by 16-mode SIW, microstrip stub, and PIN diode is proposed. The PIN diode loaded on the open end of the 16-mode SIW is used to switch the resonant state. To enhance the isolation between the ON and OFF channels, a common coupled feed line is used to provide two identical coupling paths, mitigating the impedance impact from the OFF-state channel. In addition, by adjusting the structural parameters of the proposed resonator, the transmission zeros (TZs) of the switch can be controlled independently. For theoretical analysis, the equivalent circuit modeling for the SPDT switch is investigated. Based on the equivalent circuit, the frequencies of TZs are calculated. For experimental verification, the second-order BPF-integrated SPDT switch at center frequency $f_{0} =4.9$ GHz with ripple bandwidth 400 MHz is designed, fabricated, and measured. Low insertion loss of only 1.18 dB, high upper stopband suppression, and multiple transmission zeroes are realized.
本文提出了一种基于可切换双模混合谐振器的高选择性带通滤波器集成单刀双掷(SPDT)开关。为了解决高导通损耗和高关断抑制(OSS)之间的内在矛盾,本文提出了一种由 16 模 SIW、微带存根和 PIN 二极管构成的具有两种谐振模式的可切换双模混合谐振器。加载在 16 模 SIW 开口端的 PIN 二极管用于切换谐振状态。为了增强导通和关断通道之间的隔离,使用了一条公共耦合馈电线来提供两个相同的耦合路径,从而减轻了关断状态通道的阻抗影响。此外,通过调整拟议谐振器的结构参数,开关的传输零点(TZ)可以独立控制。在理论分析方面,研究了 SPDT 开关的等效电路模型。根据等效电路,计算出了 TZ 的频率。为了进行实验验证,设计、制造并测量了中心频率为 $f_{0} =4.9$ GHz、纹波带宽为 400 MHz 的二阶 BPF 集成 SPDT 开关。实现了仅为 1.18 dB 的低插入损耗、高上止带抑制和多个传输零点。
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IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-11 DOI: 10.1109/TCPMT.2024.3458549
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IEEE Transactions on Components, Packaging and Manufacturing Technology Publication Information 电气和电子工程师学会《部件、封装和制造技术》期刊 出版信息
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-11 DOI: 10.1109/TCPMT.2024.3447513
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IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information 电气和电子工程师学会《元件、封装和制造技术》学会信息
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-11 DOI: 10.1109/TCPMT.2024.3447519
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IEEE Open Access Publishing IEEE 开放存取出版
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-11 DOI: 10.1109/TCPMT.2024.3456651
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TechRxiv: Share Your Preprint Research With the World! TechRxiv:与世界分享您的预印本研究成果!
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-11 DOI: 10.1109/TCPMT.2024.3453124
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IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors IEEE 《部件、封装和制造技术》期刊 为作者提供的信息
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-11 DOI: 10.1109/TCPMT.2024.3447517
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IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-09-11 DOI: 10.1109/TCPMT.2024.3453168
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