Pub Date : 2024-06-24DOI: 10.1109/TCPMT.2024.3418342
Ziyuan Wang;Karanvir S. Sidhu;Roni Khazaka
This article investigates the application of tensor decomposition and the stochastic Galerkin method for the uncertainty quantification of complex systems characterized by high parameter dimensionality. By employing these methods, we construct surrogate models aimed at efficiently predicting system output uncertainty. The effectiveness of our approaches is demonstrated through a comparative analysis of accuracy and central processing unit (CPU) cost with conventional Galerkin methods, using two transmission line circuit examples with up to 25 parameters.
{"title":"High-Dimensional Uncertainty Quantification Using Stochastic Galerkin and Tensor Decomposition","authors":"Ziyuan Wang;Karanvir S. Sidhu;Roni Khazaka","doi":"10.1109/TCPMT.2024.3418342","DOIUrl":"10.1109/TCPMT.2024.3418342","url":null,"abstract":"This article investigates the application of tensor decomposition and the stochastic Galerkin method for the uncertainty quantification of complex systems characterized by high parameter dimensionality. By employing these methods, we construct surrogate models aimed at efficiently predicting system output uncertainty. The effectiveness of our approaches is demonstrated through a comparative analysis of accuracy and central processing unit (CPU) cost with conventional Galerkin methods, using two transmission line circuit examples with up to 25 parameters.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 8","pages":"1461-1473"},"PeriodicalIF":2.3,"publicationDate":"2024-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141524844","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-20DOI: 10.1109/TCPMT.2024.3417261
Mingming Yi;Wenhui Zhu;Ping Wu;Yiou Qiu;Guoliao Sun;Liancheng Wang
Copper-based conductive inks have been extensively researched due to their low sintering temperature and high anti-oxidation properties for various electrical devices. However, the unstable oxidation properties of copper (Cu) limit its practical application. The existing anti-oxidation methods adopted in copper sintering often reduce copper strength and reliability. Therefore, the study presents a novel copper composite ink comprising copper precursors, copper microparticles, organic protective agents, and antioxidants. The sintering process is simple, requiring only 20 min at $300~^{circ }$ C in nitrogen without any additional pressure. As a result, sintered copper with an oxidation rate of only 3.21 wt% was successfully obtained using the mixed ink of copper particles and precursors. The porosity of the sintered copper is 10.69%, which is a 71.77% reduction compared to the copper sintered by using pure copper precursor ink, due to the synergistic effect. Furthermore, the study discusses and analyzes the lattice growth mechanism and synergy mechanism of copper particles and their precursors during copper sintering.
{"title":"Enhanced Anti-Oxidation Copper-Based Conductive Inks for Low Porosity Copper Films in Power Electronics","authors":"Mingming Yi;Wenhui Zhu;Ping Wu;Yiou Qiu;Guoliao Sun;Liancheng Wang","doi":"10.1109/TCPMT.2024.3417261","DOIUrl":"10.1109/TCPMT.2024.3417261","url":null,"abstract":"Copper-based conductive inks have been extensively researched due to their low sintering temperature and high anti-oxidation properties for various electrical devices. However, the unstable oxidation properties of copper (Cu) limit its practical application. The existing anti-oxidation methods adopted in copper sintering often reduce copper strength and reliability. Therefore, the study presents a novel copper composite ink comprising copper precursors, copper microparticles, organic protective agents, and antioxidants. The sintering process is simple, requiring only 20 min at \u0000<inline-formula> <tex-math>$300~^{circ }$ </tex-math></inline-formula>\u0000C in nitrogen without any additional pressure. As a result, sintered copper with an oxidation rate of only 3.21 wt% was successfully obtained using the mixed ink of copper particles and precursors. The porosity of the sintered copper is 10.69%, which is a 71.77% reduction compared to the copper sintered by using pure copper precursor ink, due to the synergistic effect. Furthermore, the study discusses and analyzes the lattice growth mechanism and synergy mechanism of copper particles and their precursors during copper sintering.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 7","pages":"1149-1155"},"PeriodicalIF":2.3,"publicationDate":"2024-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141524845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-19DOI: 10.1109/TCPMT.2024.3416523
Zengkai Wu;Li Jun Jiang;Sheng Sun;Ping Li
In this article, a hard constraint (HC) and domain-decomposition-based physics-informed neural network (HCD-PINN) framework is introduced for nonhomogeneous transient thermal analysis. In general, physics-informed neural network (PINN) uses a global neural network to approximate the solutions of partial differential equations (PDEs), and its performance could decrease dramatically when the problem becomes big or complex. To get this deficiency addressed and simultaneously enhance the modeling capability of PINN, in this work, the domain decomposition method (DDM)-based strategy is introduced. In each subdomain, an independent neural network is used to approximate the solution. Thereby, the size and complexity of the neutral network are reduced. To facilitate effective integration of solutions across different regions, an HC method is proposed for automatic satisfaction of interface conditions between adjacent subdomains. At the interface, continuity conditions for temperature and heat flux are considered, with heat flux continuity expressed in terms of the derivative of temperature. Using the mixed residual method (MIM), continuity conditions at the interface can be transformed into a linear form of the neural network outputs. This eliminates the need for differentiation, enabling automatic satisfaction of conditions through the use of a predefined HC matrix. Ultimately, we merge neural networks responsible for subdomains and interfaces, along with the HC matrix, using a differentiable distance function. This integration establishes a cohesive and unified framework. To validate the efficiency and accuracy of HCD-PINN, several numerical examples are studied and compared with previous PINN methods, with COMSOL simulations as exact solutions. The experimental results demonstrate the superior accuracy of our proposed method.
本文介绍了一种基于硬约束（HC）和域分解的物理信息神经网络（HCD-PINN）框架，用于非均质瞬态热分析。一般来说，物理信息神经网络（PINN）使用全局神经网络来逼近偏微分方程（PDE）的解，当问题变得复杂或庞大时，其性能会急剧下降。为了解决这一不足，同时提高 PINN 的建模能力，本研究引入了基于域分解法（DDM）的策略。在每个子域中，使用一个独立的神经网络来近似求解。因此，中性网络的规模和复杂性都有所降低。为促进不同区域解决方案的有效整合，提出了一种 HC 方法，用于自动满足相邻子域之间的接口条件。在界面上，考虑了温度和热通量的连续性条件，热通量的连续性用温度的导数表示。利用混合残差法（MIM），界面上的连续性条件可以转化为神经网络输出的线性形式。这样就无需进行微分，通过使用预定义的 HC 矩阵就能自动满足条件。最后，我们利用可微分距离函数将负责子域和界面的神经网络与 HC 矩阵合并。这种整合建立了一个具有凝聚力的统一框架。为了验证 HCD-PINN 的效率和准确性，我们研究了几个数值示例，并将其与之前的 PINN 方法进行了比较，将 COMSOL 仿真作为精确解。实验结果表明，我们提出的方法具有更高的精确度。
{"title":"A Hard Constraint and Domain-Decomposition- Based Physics-Informed Neural Network Framework for Nonhomogeneous Transient Thermal Analysis","authors":"Zengkai Wu;Li Jun Jiang;Sheng Sun;Ping Li","doi":"10.1109/TCPMT.2024.3416523","DOIUrl":"10.1109/TCPMT.2024.3416523","url":null,"abstract":"In this article, a hard constraint (HC) and domain-decomposition-based physics-informed neural network (HCD-PINN) framework is introduced for nonhomogeneous transient thermal analysis. In general, physics-informed neural network (PINN) uses a global neural network to approximate the solutions of partial differential equations (PDEs), and its performance could decrease dramatically when the problem becomes big or complex. To get this deficiency addressed and simultaneously enhance the modeling capability of PINN, in this work, the domain decomposition method (DDM)-based strategy is introduced. In each subdomain, an independent neural network is used to approximate the solution. Thereby, the size and complexity of the neutral network are reduced. To facilitate effective integration of solutions across different regions, an HC method is proposed for automatic satisfaction of interface conditions between adjacent subdomains. At the interface, continuity conditions for temperature and heat flux are considered, with heat flux continuity expressed in terms of the derivative of temperature. Using the mixed residual method (MIM), continuity conditions at the interface can be transformed into a linear form of the neural network outputs. This eliminates the need for differentiation, enabling automatic satisfaction of conditions through the use of a predefined HC matrix. Ultimately, we merge neural networks responsible for subdomains and interfaces, along with the HC matrix, using a differentiable distance function. This integration establishes a cohesive and unified framework. To validate the efficiency and accuracy of HCD-PINN, several numerical examples are studied and compared with previous PINN methods, with COMSOL simulations as exact solutions. The experimental results demonstrate the superior accuracy of our proposed method.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 7","pages":"1215-1226"},"PeriodicalIF":2.3,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938965","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
As the pitch and size of microbumps in 2.5-D/ 3-D packages decrease, void evolution in the solder joint volume accompanied by growth of Cu-Sn intermetallic (IMC) phase is a potential reliability concern necessitating further investigation into the underlying mechanisms. In this study, test devices are designed and fabricated to mimic the behavior of fine pitch microbumps of size $30~mu $ m. These test devices offer the capability of nondestructively observing IMC growth and void evolution. Consequently, they allow continuous observation of phase evolution. These devices also eliminate potential loss of information due to destructive processing techniques. Each fabricated test device consists of multiple Cu-Sn-Cu joints with varying sizes of Sn solder segments that are then aged at $175~ {mathrm {^{circ}C }}$ for a total time of 1000 h, with readouts every 50 or 100 h under scanning electron microscope (SEM). Additionally, trenches are milled in some samples using focused ion beam (FIB) to characterize the various material phases at the Cu-Sn junctions and monitor their growth with thermal aging. The observations from these investigations are reported, and a reaction-diffusion mechanism is proposed to explain the observed Cu-Sn IMC and void evolution due to thermal aging at elevated temperatures.
{"title":"Void Growth and Intermetallic Bridging in Microscale Solder Interconnects Under Thermal Annealing","authors":"Sudarshan Prasanna Prasad;Chetan Jois;Yuvraj Singh;Ganesh Subbarayan;Bharat Penmecha;Prasanna Raghavan","doi":"10.1109/TCPMT.2024.3416430","DOIUrl":"10.1109/TCPMT.2024.3416430","url":null,"abstract":"As the pitch and size of microbumps in 2.5-D/ 3-D packages decrease, void evolution in the solder joint volume accompanied by growth of Cu-Sn intermetallic (IMC) phase is a potential reliability concern necessitating further investigation into the underlying mechanisms. In this study, test devices are designed and fabricated to mimic the behavior of fine pitch microbumps of size \u0000<inline-formula> <tex-math>$30~mu $ </tex-math></inline-formula>\u0000m. These test devices offer the capability of nondestructively observing IMC growth and void evolution. Consequently, they allow continuous observation of phase evolution. These devices also eliminate potential loss of information due to destructive processing techniques. Each fabricated test device consists of multiple Cu-Sn-Cu joints with varying sizes of Sn solder segments that are then aged at \u0000<inline-formula> <tex-math>$175~ {mathrm {^{circ}C }}$ </tex-math></inline-formula>\u0000 for a total time of 1000 h, with readouts every 50 or 100 h under scanning electron microscope (SEM). Additionally, trenches are milled in some samples using focused ion beam (FIB) to characterize the various material phases at the Cu-Sn junctions and monitor their growth with thermal aging. The observations from these investigations are reported, and a reaction-diffusion mechanism is proposed to explain the observed Cu-Sn IMC and void evolution due to thermal aging at elevated temperatures.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 7","pages":"1308-1318"},"PeriodicalIF":2.3,"publicationDate":"2024-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141939182","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Cu-Cu bonding is widely used in 3-D stacking for chip interconnection. However, noncoplanarity of Cu pillars can significantly influence the reliability of the stacked chips. In this work, the impacts of bonding pressures on chip stacking with noncoplanar Cu pillars were investigated through finite element modeling and molecular dynamics (MDs) simulations. From finite element modeling, the maximum residual stress in the TSV was located in the bottom Cu pillar furthest from the center of the chip and increased with bonding pressure. It was also found that the overall warpage increased linearly with the number of chip layers initially and then stabilized when Cu pillars were noncoplanar. The linear increase rate raised with higher bonding pressure. Based on MDs simulations, the thickness of bonding layer in the shorter pillar increased continuously with bonding time and pressure. In contrast, the thickness in standard pillars grew over time and eventually stabilized. During this, the bonding pressure posed negligible effects on the bonding layer thickness in standard pillars, and dislocations were generally concentrated near the bonding layer, serving as channels for Cu atom diffusion into the bonding layer.
{"title":"Impacts of Pressure on the Stability of Chip Stack Structures in the Presence of Noncoplanar Cu Pillars","authors":"Yu Li;Li Liu;Meng Ruan;Zhengzhi Wang;Sheng Liu;Zhiwen Chen","doi":"10.1109/TCPMT.2024.3416108","DOIUrl":"10.1109/TCPMT.2024.3416108","url":null,"abstract":"Cu-Cu bonding is widely used in 3-D stacking for chip interconnection. However, noncoplanarity of Cu pillars can significantly influence the reliability of the stacked chips. In this work, the impacts of bonding pressures on chip stacking with noncoplanar Cu pillars were investigated through finite element modeling and molecular dynamics (MDs) simulations. From finite element modeling, the maximum residual stress in the TSV was located in the bottom Cu pillar furthest from the center of the chip and increased with bonding pressure. It was also found that the overall warpage increased linearly with the number of chip layers initially and then stabilized when Cu pillars were noncoplanar. The linear increase rate raised with higher bonding pressure. Based on MDs simulations, the thickness of bonding layer in the shorter pillar increased continuously with bonding time and pressure. In contrast, the thickness in standard pillars grew over time and eventually stabilized. During this, the bonding pressure posed negligible effects on the bonding layer thickness in standard pillars, and dislocations were generally concentrated near the bonding layer, serving as channels for Cu atom diffusion into the bonding layer.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 7","pages":"1207-1214"},"PeriodicalIF":2.3,"publicationDate":"2024-06-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141939183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-13DOI: 10.1109/TCPMT.2024.3413723
Jiaxuan Wang;Pan Liu
With the development of power electronics, there is an increasing demand for high-temperature packaging materials, especially for encapsulants such as calcium aluminate, phosphate cement-based materials (CEs), etc. Therefore, environmental impact analysis for such novel encapsulants becomes necessary. In this article, four encapsulation materials were first evaluated through life cycle assessment (LCA) for environmental impact, including three polymer-based materials, namely epoxy (EP) resin, polyurethane (PU), and silicone gel (SG) and a novel calcium aluminate CE, with the utilization of software Simapro and the method ReCiPe2016. The LCA revealed that CE emerged as the most environmentally friendly option, followed by EP, PU, and SG. The results of LCA, together with six other criteria, namely maximum operating temperature, coefficient of thermal expansion (CTE), thermal conductivity (TC), volume resistivity (R $_{mathrm {V}}$ ), viscosity, and costs, were further taken into account for a multicriteria decision making (MCDM) calculation for suitability. With the analytic hierarchy process (AHP) weighting method and the technique of order preference similarity to the ideal solution (TOPSIS) evaluation method applied, the MCDM results presented the preference ranking order of the encapsulants which was CE, EP, PU, SG. According to the findings from LCA and MCDM, CE received an outstanding evaluation result, which indicates its great potential as an encapsulation material for power electronics packaging.
{"title":"Life Cycle Assessment (LCA) and Multicriteria Decision Making (MCDM): An Evaluation of Encapsulants for Power Electronics Packaging","authors":"Jiaxuan Wang;Pan Liu","doi":"10.1109/TCPMT.2024.3413723","DOIUrl":"10.1109/TCPMT.2024.3413723","url":null,"abstract":"With the development of power electronics, there is an increasing demand for high-temperature packaging materials, especially for encapsulants such as calcium aluminate, phosphate cement-based materials (CEs), etc. Therefore, environmental impact analysis for such novel encapsulants becomes necessary. In this article, four encapsulation materials were first evaluated through life cycle assessment (LCA) for environmental impact, including three polymer-based materials, namely epoxy (EP) resin, polyurethane (PU), and silicone gel (SG) and a novel calcium aluminate CE, with the utilization of software Simapro and the method ReCiPe2016. The LCA revealed that CE emerged as the most environmentally friendly option, followed by EP, PU, and SG. The results of LCA, together with six other criteria, namely maximum operating temperature, coefficient of thermal expansion (CTE), thermal conductivity (TC), volume resistivity (R\u0000<inline-formula> <tex-math>$_{mathrm {V}}$ </tex-math></inline-formula>\u0000), viscosity, and costs, were further taken into account for a multicriteria decision making (MCDM) calculation for suitability. With the analytic hierarchy process (AHP) weighting method and the technique of order preference similarity to the ideal solution (TOPSIS) evaluation method applied, the MCDM results presented the preference ranking order of the encapsulants which was CE, EP, PU, SG. According to the findings from LCA and MCDM, CE received an outstanding evaluation result, which indicates its great potential as an encapsulation material for power electronics packaging.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 8","pages":"1501-1510"},"PeriodicalIF":2.3,"publicationDate":"2024-06-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938966","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-11DOI: 10.1109/TCPMT.2024.3412740
Abdullah S. Obeidat;Emuobosan Enakerakpo;Ashraf Umar;Waleed Al-Shaibani;Mohamed Abdelatty;Sara Lieberman;Olya Noruz Shamsian;Riadh Al-Haidari;Mohammed Alhendi;Mark D. Poliks
Direct writing methods created a revolution in the electronic industry due to their lower cost, fast processing, and lower wasted material. Microstrip line is an important electronic component that transfers the signal and the foundation for the communication between multiple components in any circuit board. Therefore, studying its electromechanical behavior against thermal and mechanical stresses is necessary for real-life applications. In this research, novel microstrip lines were printed on “polyethylene terephthalate” (PET) and “polyimide” (PI) flexible substrates using an aerosol jet printer (AJP) and dispensing system (DS). An advanced posttreatment technique was used to enhance the conductivity of the microstrip lines printed on low glass transition flexible PET substrate. Different microstrip line designs with various mesh ground planes were tested under mild and harsh mechanical bending and different environmental conditions and their losses were characterized. The results showed that the photonic curing enhanced the microstrip lines conductivity by 65% compared to the convectional curing. The in situ resistance measurements during harsh bending demonstrated conclusively that the robustness of the printed microstrip lines increased as the filling percentage of the ground plane became lower. The aging at $85~^{circ }$ C/85% RH had a significantly stronger effect on the microstrip lines conductivity compared to the aging at $85~^{circ }$ C without humidity due to the changes in the printed ink’s microstructure and the increment in ionic conductivity. Thermal aging led to a reduction in the microstrip line’s ductility and the cracking became easier in the microstructure of the printed films. The resistance of a sample aged at $85~^{circ }$ C increased by 81.7% after 10000 bending cycles compared to only 20.5% for a sample without thermal aging. Such findings provide important guidelines for those designing flexible hybrid electronics and for manufacturers who seek the assurance of these technologies for both maturing and reliable products.
直接写入法因其成本低、处理速度快、材料浪费少而在电子工业中掀起了一场革命。微带线是传输信号的重要电子元件，也是电路板中多个元件之间通信的基础。因此，研究微带线在热应力和机械应力作用下的机电行为对于实际应用非常必要。在这项研究中，使用气溶胶喷射打印机（AJP）和点胶系统（DS）在 "聚对苯二甲酸乙二醇酯"（PET）和 "聚酰亚胺"（PI）柔性基板上打印了新型微带线。先进的后处理技术用于提高在低玻璃转化率柔性 PET 基材上打印的微带线的导电性。在轻微和剧烈的机械弯曲以及不同的环境条件下，对带有各种网状接地平面的不同微带线设计进行了测试，并对其损耗进行了表征。结果表明，与对流固化相比，光子固化将微带线的导电率提高了 65%。严酷弯曲过程中的现场电阻测量结果表明，印刷微带线的稳健性随着地平面填充率的降低而提高。在 85~^{circ }$ C/85% RH 条件下老化与不含湿度的 85~^{circ }$ C 条件下老化相比，对微带线电导率的影响要大得多，这是因为印刷油墨的微观结构发生了变化，离子电导率也增加了。热老化导致微带线的延展性降低，印刷薄膜的微观结构更容易开裂。在 85~^{circ }$ C 下老化的样品在经过 10000 次弯曲循环后，电阻增加了 81.7%，而未经过热老化的样品仅增加了 20.5%。这些发现为设计柔性混合电子产品的人员和寻求这些技术成熟可靠产品保证的制造商提供了重要指导。
{"title":"Effect of Thermal and Mechanical Stresses on Novel Microstrip Lines Printed on Flexible Substrates","authors":"Abdullah S. Obeidat;Emuobosan Enakerakpo;Ashraf Umar;Waleed Al-Shaibani;Mohamed Abdelatty;Sara Lieberman;Olya Noruz Shamsian;Riadh Al-Haidari;Mohammed Alhendi;Mark D. Poliks","doi":"10.1109/TCPMT.2024.3412740","DOIUrl":"10.1109/TCPMT.2024.3412740","url":null,"abstract":"Direct writing methods created a revolution in the electronic industry due to their lower cost, fast processing, and lower wasted material. Microstrip line is an important electronic component that transfers the signal and the foundation for the communication between multiple components in any circuit board. Therefore, studying its electromechanical behavior against thermal and mechanical stresses is necessary for real-life applications. In this research, novel microstrip lines were printed on “polyethylene terephthalate” (PET) and “polyimide” (PI) flexible substrates using an aerosol jet printer (AJP) and dispensing system (DS). An advanced posttreatment technique was used to enhance the conductivity of the microstrip lines printed on low glass transition flexible PET substrate. Different microstrip line designs with various mesh ground planes were tested under mild and harsh mechanical bending and different environmental conditions and their losses were characterized. The results showed that the photonic curing enhanced the microstrip lines conductivity by 65% compared to the convectional curing. The in situ resistance measurements during harsh bending demonstrated conclusively that the robustness of the printed microstrip lines increased as the filling percentage of the ground plane became lower. The aging at \u0000<inline-formula> <tex-math>$85~^{circ }$ </tex-math></inline-formula>\u0000C/85% RH had a significantly stronger effect on the microstrip lines conductivity compared to the aging at \u0000<inline-formula> <tex-math>$85~^{circ }$ </tex-math></inline-formula>\u0000C without humidity due to the changes in the printed ink’s microstructure and the increment in ionic conductivity. Thermal aging led to a reduction in the microstrip line’s ductility and the cracking became easier in the microstructure of the printed films. The resistance of a sample aged at \u0000<inline-formula> <tex-math>$85~^{circ }$ </tex-math></inline-formula>\u0000C increased by 81.7% after 10000 bending cycles compared to only 20.5% for a sample without thermal aging. Such findings provide important guidelines for those designing flexible hybrid electronics and for manufacturers who seek the assurance of these technologies for both maturing and reliable products.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 8","pages":"1481-1492"},"PeriodicalIF":2.3,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-11DOI: 10.1109/tcpmt.2024.3410298
Vinay Kukutla, Ramachandra Achar, Wai Kong Lee
{"title":"TC-GVF: Tensor Core GPU based Vector Fitting via Accelerated Tall-Skinny QR Solvers","authors":"Vinay Kukutla, Ramachandra Achar, Wai Kong Lee","doi":"10.1109/tcpmt.2024.3410298","DOIUrl":"https://doi.org/10.1109/tcpmt.2024.3410298","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"49 1","pages":""},"PeriodicalIF":2.2,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938971","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-11DOI: 10.1109/TCPMT.2024.3412794
Belal Al-Khamaiseh;Yuri S. Muzychka
In microelectronic devices, the moment a high-power current is transmitted into the system, heat is simultaneously generated, and the thermal field keeps developing until it reaches a steady-state field after a period of time. In this work, transient analytical solutions for the temperature field and thermal resistance of a rectangular 3-D flux channel are obtained. The flux channel is assumed to have a small heat source on the top surface, whereas convective effects are considered on the bottom surface and lateral edges. The time-dependent solutions are presented explicitly as infinite Fourier series forms. In addition, the solutions are also presented in dimensionless forms as generalized solutions. Moreover, an existing, well-established simple model that represents the profile of the transient thermal spreading resistance for a semi-infinite flux tube is used to verify the presented forms of the analytical solutions, and the results compare very well when considering a flux channel of large thickness. Further, the solutions are used to study the behavior of temperature and thermal resistance over time for some dimensional and nondimensional problems.
{"title":"Analytical Solutions for Transient Thermal Spreading Resistance of a 3-D Flux Channel","authors":"Belal Al-Khamaiseh;Yuri S. Muzychka","doi":"10.1109/TCPMT.2024.3412794","DOIUrl":"10.1109/TCPMT.2024.3412794","url":null,"abstract":"In microelectronic devices, the moment a high-power current is transmitted into the system, heat is simultaneously generated, and the thermal field keeps developing until it reaches a steady-state field after a period of time. In this work, transient analytical solutions for the temperature field and thermal resistance of a rectangular 3-D flux channel are obtained. The flux channel is assumed to have a small heat source on the top surface, whereas convective effects are considered on the bottom surface and lateral edges. The time-dependent solutions are presented explicitly as infinite Fourier series forms. In addition, the solutions are also presented in dimensionless forms as generalized solutions. Moreover, an existing, well-established simple model that represents the profile of the transient thermal spreading resistance for a semi-infinite flux tube is used to verify the presented forms of the analytical solutions, and the results compare very well when considering a flux channel of large thickness. Further, the solutions are used to study the behavior of temperature and thermal resistance over time for some dimensional and nondimensional problems.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 9","pages":"1610-1619"},"PeriodicalIF":2.3,"publicationDate":"2024-06-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938969","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2024-06-06DOI: 10.1109/TCPMT.2024.3410379
Wei Wang;Bei Li;Sigeng Li;Xincheng Wang;Yanfeng Gong;Jian Wang;Hanwen Ren;Qingmin Li
As power electronic devices continue to advance toward higher voltage and power levels, the issue of insulation failure in silicone gel package materials is becoming more noticeable. Therefore, there is a pressing need to develop a high-performance silicone potting material. This research presents the preparation of a silicone gel filled with multiwalled carbon nanotubes (MWCNTs) and micrometer silicon carbide (SiC) using the physical blending method. Then, the composite’s electrothermal properties and high-frequency partial discharge characteristics are explicitly investigated. The experimental findings indicate that when the MWCNT filling ratio increases from 0%vol to 0.7%vol, the modified silicone gel has pronounced nonlinear conductivity properties, reaching a maximum nonlinear coefficient of 9.34. The rise in shallow and deep trap density ratio expedites the dissipation rate of surface charge. Also, the thermal conductivity is also augmented by 59.38%. Nevertheless, the dielectric loss exhibits a progressive increase. Finally, the modified silicone gel was used in the potting package module, and high-frequency partial discharge experiments were conducted. It was found that the silicone gel filled with 0.3%vol MWCNT/9.7%vol SiC could effectively inhibit the partial discharge. This study will provide practical ideas and a theoretical basis for developing new high-performance insulating materials for the insulated-gate bipolar transistor (IGBT) package.
{"title":"Improved Electrothermal Properties and High-Frequency Discharge Performance Verification of MWCNT/SiC Complex-Modified Silicone Gel","authors":"Wei Wang;Bei Li;Sigeng Li;Xincheng Wang;Yanfeng Gong;Jian Wang;Hanwen Ren;Qingmin Li","doi":"10.1109/TCPMT.2024.3410379","DOIUrl":"10.1109/TCPMT.2024.3410379","url":null,"abstract":"As power electronic devices continue to advance toward higher voltage and power levels, the issue of insulation failure in silicone gel package materials is becoming more noticeable. Therefore, there is a pressing need to develop a high-performance silicone potting material. This research presents the preparation of a silicone gel filled with multiwalled carbon nanotubes (MWCNTs) and micrometer silicon carbide (SiC) using the physical blending method. Then, the composite’s electrothermal properties and high-frequency partial discharge characteristics are explicitly investigated. The experimental findings indicate that when the MWCNT filling ratio increases from 0%vol to 0.7%vol, the modified silicone gel has pronounced nonlinear conductivity properties, reaching a maximum nonlinear coefficient of 9.34. The rise in shallow and deep trap density ratio expedites the dissipation rate of surface charge. Also, the thermal conductivity is also augmented by 59.38%. Nevertheless, the dielectric loss exhibits a progressive increase. Finally, the modified silicone gel was used in the potting package module, and high-frequency partial discharge experiments were conducted. It was found that the silicone gel filled with 0.3%vol MWCNT/9.7%vol SiC could effectively inhibit the partial discharge. This study will provide practical ideas and a theoretical basis for developing new high-performance insulating materials for the insulated-gate bipolar transistor (IGBT) package.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 8","pages":"1347-1358"},"PeriodicalIF":2.3,"publicationDate":"2024-06-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"141938951","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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