Pub Date : 2025-10-03DOI: 10.1109/TCPMT.2025.3617495
Yeonju Kim;Kyungmin Shin;Donghyeok Choi;Jongshin Hyun;Byungjoo Jin;Jong Kyung Park
This study explores the potential of SiCN films as a low-temperature alternative to SiO2 insulators for hybrid bonding in 3-D integration. SiCN films were deposited at $180~^{circ }$ C and $350~^{circ }$ C to investigate the effects of deposition temperature and composition on bonding performance. By optimizing precursor flow rates, we tailored the film properties, enhancing Si dangling bonds crucial for bonding. To achieve ultralow-temperature bonding below $100~^{circ }$ C, O2 plasma and potassium hydroxide (KOH) surface treatments were employed, significantly improving bonding interfaces by increasing Si-OH groups on the surface. Our results demonstrate that SiCN films deposited at low temperatures can achieve bonding characteristics comparable to those of high-temperature films. The enhanced bonding performance is attributed to surface treatments that mitigate hydrogen content and promote Si-OH formation. The low-temperature bonding capabilities of SiCN contribute to reducing thermal budgets, preventing device degradation, and advancing 3-D integration and hybrid bonding technologies for next-generation semiconductor applications.
{"title":"Ultralow-Temperature Deposition and Enhanced Bonding of SiCN Films for Advanced 3-D Integration","authors":"Yeonju Kim;Kyungmin Shin;Donghyeok Choi;Jongshin Hyun;Byungjoo Jin;Jong Kyung Park","doi":"10.1109/TCPMT.2025.3617495","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3617495","url":null,"abstract":"This study explores the potential of SiCN films as a low-temperature alternative to SiO<sub>2</sub> insulators for hybrid bonding in 3-D integration. SiCN films were deposited at <inline-formula> <tex-math>$180~^{circ }$ </tex-math></inline-formula>C and <inline-formula> <tex-math>$350~^{circ }$ </tex-math></inline-formula>C to investigate the effects of deposition temperature and composition on bonding performance. By optimizing precursor flow rates, we tailored the film properties, enhancing Si dangling bonds crucial for bonding. To achieve ultralow-temperature bonding below <inline-formula> <tex-math>$100~^{circ }$ </tex-math></inline-formula>C, O<sub>2</sub> plasma and potassium hydroxide (KOH) surface treatments were employed, significantly improving bonding interfaces by increasing Si-OH groups on the surface. Our results demonstrate that SiCN films deposited at low temperatures can achieve bonding characteristics comparable to those of high-temperature films. The enhanced bonding performance is attributed to surface treatments that mitigate hydrogen content and promote Si-OH formation. The low-temperature bonding capabilities of SiCN contribute to reducing thermal budgets, preventing device degradation, and advancing 3-D integration and hybrid bonding technologies for next-generation semiconductor applications.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 11","pages":"2501-2512"},"PeriodicalIF":3.0,"publicationDate":"2025-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145584668","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A novel low-temperature wafer-level hybrid bonding technique using metal microbumps (Cu/SnAg) and nonphotosensitive dry films has been developed and investigated. The bonding process is conducted at low temperatures: $160~^{circ }$ C for the dry film and within the range of $260~^{circ }$ C–$280~^{circ }$ C for the microbumps. The microbumps are fabricated using conventional electroplating, while patterning of the nonphotosensitive dry film is achieved through laser ablation, bypassing the need for traditional lithography. Furthermore, optimizing the thickness of the microbumps, the opening dimensions of the dry film, the maximum bonding pressure, and the bonding temperature has enabled the development of a stepped control profile, which allows a seam-free bonding interface between the microbumps and the dry films. For demonstration, superior interconnect performance with an average tensile strength of approximately 8.11 MPa is achieved. The nonphotosensitive dry film exhibits low transmission loss when applied to glass packaging due to its low dielectric constant and dissipation factor. Consequently, the proposed hybrid bonding technique provides a highly cost-effective and promising approach for future multilayer glass/polyimide (PI) radio frequency (RF) 3-D integration.
研究了一种利用金属微凸点（Cu/SnAg）和非光敏干膜的低温晶圆级杂化键合技术。结合过程在低温下进行：$160~^{circ}$ C用于干膜，$260~^{circ}$ C - $280~^{circ}$ C用于微凸起。微凸起是用传统的电镀方法制造的，而非光敏干膜的图案是通过激光烧蚀来实现的，绕过了传统光刻的需要。此外，优化微凸点的厚度、干膜的开口尺寸、最大键合压力和键合温度，使微凸点和干膜之间形成无接缝的键合界面成为可能。作为验证，该材料具有优异的互连性能，平均抗拉强度约为8.11 MPa。非光敏干膜由于介电常数和耗散系数较低，应用于玻璃封装时具有较低的传输损耗。因此，所提出的混合键合技术为未来多层玻璃/聚酰亚胺（PI）射频（RF）三维集成提供了一种极具成本效益和前景的方法。
{"title":"Hybrid Bonding of Nonphotosensitive Dry Films and Cu/SnAg Microbumps for Multilayer Glass Packaging","authors":"Qing Zhou;Ying Tian;Yaqing Zhou;Yi Zhong;Tian Yu;Miao Zhang;Daquan Yu","doi":"10.1109/TCPMT.2025.3616264","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3616264","url":null,"abstract":"A novel low-temperature wafer-level hybrid bonding technique using metal microbumps (Cu/SnAg) and nonphotosensitive dry films has been developed and investigated. The bonding process is conducted at low temperatures: <inline-formula> <tex-math>$160~^{circ }$ </tex-math></inline-formula>C for the dry film and within the range of <inline-formula> <tex-math>$260~^{circ }$ </tex-math></inline-formula>C–<inline-formula> <tex-math>$280~^{circ }$ </tex-math></inline-formula>C for the microbumps. The microbumps are fabricated using conventional electroplating, while patterning of the nonphotosensitive dry film is achieved through laser ablation, bypassing the need for traditional lithography. Furthermore, optimizing the thickness of the microbumps, the opening dimensions of the dry film, the maximum bonding pressure, and the bonding temperature has enabled the development of a stepped control profile, which allows a seam-free bonding interface between the microbumps and the dry films. For demonstration, superior interconnect performance with an average tensile strength of approximately 8.11 MPa is achieved. The nonphotosensitive dry film exhibits low transmission loss when applied to glass packaging due to its low dielectric constant and dissipation factor. Consequently, the proposed hybrid bonding technique provides a highly cost-effective and promising approach for future multilayer glass/polyimide (PI) radio frequency (RF) 3-D integration.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 11","pages":"2513-2520"},"PeriodicalIF":3.0,"publicationDate":"2025-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145584622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-29DOI: 10.1109/TCPMT.2025.3615235
So-Yeon Park;Yoonho Choi;Cha-Hee Kim;Seung-Ho Seo;Sarah Eunkyung Kim;Won-Jun Lee
There is a critical need to understand the optimal process conditions and pad design for hybrid bonding at progressively finer pitches. The finite element method (FEM) analysis is a valuable approach for elucidating the bonding mechanism and predicting the bonded area. In this study, we investigated hybrid bonding using FEM analysis to study bonding mechanisms and suggest optimal design strategies. Models were constructed for sub-micrometer copper pads with silicon carbonitride (SiCN) as the dielectric film at the bonding interface, with variations in copper pad dimensions and dishing depth. The postbond annealing process was simulated with different annealing temperatures. The results show that high annealing temperatures and low chemical mechanical polishing (CMP) dishing depths promote sufficient pad expansion to achieve complete copper-to-copper bonding, which is consistent with established observations in the field. Furthermore, the study highlights a strong dependence of the bonded area on the copper pad dimensions, emphasizing the need for proper optimization of pad dimensions. In particular, copper bonding was highly sensitive to pad thickness and aspect ratio. As the pad thickness increased, thermal expansion increased, resulting in a larger bonded area. For all pad thicknesses, maximum thermal expansion occurred at an aspect ratio of approximately 0.4. Therefore, a specific diameter range was identified where the maximum bonded area could be achieved for a given pad thickness.
{"title":"Effect of Process and Design Parameters in Cu/SiCN Hybrid Bonding Process: A Finite Element Analysis Study","authors":"So-Yeon Park;Yoonho Choi;Cha-Hee Kim;Seung-Ho Seo;Sarah Eunkyung Kim;Won-Jun Lee","doi":"10.1109/TCPMT.2025.3615235","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3615235","url":null,"abstract":"There is a critical need to understand the optimal process conditions and pad design for hybrid bonding at progressively finer pitches. The finite element method (FEM) analysis is a valuable approach for elucidating the bonding mechanism and predicting the bonded area. In this study, we investigated hybrid bonding using FEM analysis to study bonding mechanisms and suggest optimal design strategies. Models were constructed for sub-micrometer copper pads with silicon carbonitride (SiCN) as the dielectric film at the bonding interface, with variations in copper pad dimensions and dishing depth. The postbond annealing process was simulated with different annealing temperatures. The results show that high annealing temperatures and low chemical mechanical polishing (CMP) dishing depths promote sufficient pad expansion to achieve complete copper-to-copper bonding, which is consistent with established observations in the field. Furthermore, the study highlights a strong dependence of the bonded area on the copper pad dimensions, emphasizing the need for proper optimization of pad dimensions. In particular, copper bonding was highly sensitive to pad thickness and aspect ratio. As the pad thickness increased, thermal expansion increased, resulting in a larger bonded area. For all pad thicknesses, maximum thermal expansion occurred at an aspect ratio of approximately 0.4. Therefore, a specific diameter range was identified where the maximum bonded area could be achieved for a given pad thickness.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 11","pages":"2492-2500"},"PeriodicalIF":3.0,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145584621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-16DOI: 10.1109/TCPMT.2025.3602195
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Publication Information","authors":"","doi":"10.1109/TCPMT.2025.3602195","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3602195","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 9","pages":"C2-C2"},"PeriodicalIF":3.0,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11165616","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145100318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-16DOI: 10.1109/TCPMT.2025.3598876
Antonio Maffucci;Mihai Telescu
{"title":"Foreword: Special Section on Advances in Design, Modeling, and Simulation Methodologies for Modern Chip-Package-System Integration","authors":"Antonio Maffucci;Mihai Telescu","doi":"10.1109/TCPMT.2025.3598876","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3598876","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 9","pages":"1812-1813"},"PeriodicalIF":3.0,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11165608","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145100430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-16DOI: 10.1109/TCPMT.2025.3602199
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information","authors":"","doi":"10.1109/TCPMT.2025.3602199","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3602199","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 9","pages":"C3-C3"},"PeriodicalIF":3.0,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11165615","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073333","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-16DOI: 10.1109/TCPMT.2025.3602197
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Information for Authors","authors":"","doi":"10.1109/TCPMT.2025.3602197","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3602197","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 9","pages":"2053-2053"},"PeriodicalIF":3.0,"publicationDate":"2025-09-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11165613","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145073374","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-15DOI: 10.1109/TCPMT.2025.3610036
Fuhan Liu;Rui Zhang;Kanno Kimiyuki;Joon Woo Kim;Madhavan Swaminathan;Rao R. Tummala
Downscaling of microvias to approach the critical dimension (CD) of routing half-line pitch is crucial for advanced packaging but presents significant challenges. The state of the art (SOTA), achieved with nanosecond (ns) pulsed UV laser, results in via diameters of 20 $mu $ m. By employing a 5-ps pulsed UV laser, microvias of 5 $mu $ m were achieved in a 5-$mu $ m-thick Ajinomoto build-up film (ABF) through conventional laser ablation and could be reduced to 3 $mu $ m by adding a thin copper layer on top of the ABF as a buffer. With thinner and filler-free materials, the minimum demonstrated microvia size was further down to 1.26 $mu $ m on a 2-$mu $ m-thick JSR dielectric film. A via matrix of $26times 33$ (858) was presented. The heat-affected zone (HAZ) and defects were around 0.5 $mu $ m. The landing accuracy within $16times 16$ (256) with a via pitch of 5-$mu $ m matrix was analyzed, which was ±0.34 $mu $ m. Considerations for the next-generation system designs for 1 $mu $ m and submicrometer microvias are discussed.
{"title":"Advances in Package Microvia Interconnects: Breakthroughs With Picosecond UV Laser Ablation","authors":"Fuhan Liu;Rui Zhang;Kanno Kimiyuki;Joon Woo Kim;Madhavan Swaminathan;Rao R. Tummala","doi":"10.1109/TCPMT.2025.3610036","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3610036","url":null,"abstract":"Downscaling of microvias to approach the critical dimension (CD) of routing half-line pitch is crucial for advanced packaging but presents significant challenges. The state of the art (SOTA), achieved with nanosecond (ns) pulsed UV laser, results in via diameters of 20 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m. By employing a 5-ps pulsed UV laser, microvias of 5 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m were achieved in a 5-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-thick Ajinomoto build-up film (ABF) through conventional laser ablation and could be reduced to 3 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m by adding a thin copper layer on top of the ABF as a buffer. With thinner and filler-free materials, the minimum demonstrated microvia size was further down to 1.26 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m on a 2-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m-thick JSR dielectric film. A via matrix of <inline-formula> <tex-math>$26times 33$ </tex-math></inline-formula> (858) was presented. The heat-affected zone (HAZ) and defects were around 0.5 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m. The landing accuracy within <inline-formula> <tex-math>$16times 16$ </tex-math></inline-formula> (256) with a via pitch of 5-<inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m matrix was analyzed, which was ±0.34 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m. Considerations for the next-generation system designs for 1 <inline-formula> <tex-math>$mu $ </tex-math></inline-formula>m and submicrometer microvias are discussed.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 11","pages":"2531-2538"},"PeriodicalIF":3.0,"publicationDate":"2025-09-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145584666","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-09-11DOI: 10.1109/TCPMT.2025.3609236
Walter Hartner;Simon Kornprobst;Mathias Zinnoecker;Martin Niessner;Markus Fink;Franz-Peter Kalz;Peter Lutz
As the automotive industry continues to advance, the demand for high-performance radar systems increases. To address this need, we explored the potential of fan-out wafer-level packaging (FO-WLP) or embedded wafer-level ball grid Aarray (eWLB) for monolithic microwave integrated circuits (MMICs) in the 77-GHz range, with a focus on thermal management through top-side cooling (TSC). Our thermal simulations revealed that using a thin, high-thermal-conductivity thermal interface material (TIM) layer, the thermal resistance can be reduced by up to 75%. We assessed various scenarios, including TIM/absorber layer thickness and thermal conductivity variations, chip/package size influences, and overmold thickness impacts. To ensure reliability, we analyzed the mechanical aspects of pressure and force applied by TIM compression on the MMIC using thermomechanical simulations. Our results showed a zone with less than 10% loss in lifetime under certain top-force loading conditions. Experimental thermo-mechanical Temperature Cycling on Board (TCoB) board-level reliability tests verified these findings, highlighting the importance of avoiding excessive top-side forces and thermomechanical cycling numbers to prevent solder ball bridging. Electromagnetic characterization of TIM materials’ electrical properties and RF measurements of the radar system with TSC were also conducted. A key takeaway is the recommendation to use high-loss TIM materials to prevent RF performance deterioration when applying TSC with metallic components. By optimizing FO-WLP/eWLB packaging for MMICs in automotive radar applications, we can enable more efficient, reliable, and high-performance systems that make our roads safer and more efficient.
{"title":"Enabling Reliable and Efficient Automotive Radar Systems by Investigating FO-WLP/eWLB Packaging for 77-GHz MMICs With Top-Side Cooling","authors":"Walter Hartner;Simon Kornprobst;Mathias Zinnoecker;Martin Niessner;Markus Fink;Franz-Peter Kalz;Peter Lutz","doi":"10.1109/TCPMT.2025.3609236","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3609236","url":null,"abstract":"As the automotive industry continues to advance, the demand for high-performance radar systems increases. To address this need, we explored the potential of fan-out wafer-level packaging (FO-WLP) or embedded wafer-level ball grid Aarray (eWLB) for monolithic microwave integrated circuits (MMICs) in the 77-GHz range, with a focus on thermal management through top-side cooling (TSC). Our thermal simulations revealed that using a thin, high-thermal-conductivity thermal interface material (TIM) layer, the thermal resistance can be reduced by up to 75%. We assessed various scenarios, including TIM/absorber layer thickness and thermal conductivity variations, chip/package size influences, and overmold thickness impacts. To ensure reliability, we analyzed the mechanical aspects of pressure and force applied by TIM compression on the MMIC using thermomechanical simulations. Our results showed a zone with less than 10% loss in lifetime under certain top-force loading conditions. Experimental thermo-mechanical Temperature Cycling on Board (TCoB) board-level reliability tests verified these findings, highlighting the importance of avoiding excessive top-side forces and thermomechanical cycling numbers to prevent solder ball bridging. Electromagnetic characterization of TIM materials’ electrical properties and RF measurements of the radar system with TSC were also conducted. A key takeaway is the recommendation to use high-loss TIM materials to prevent RF performance deterioration when applying TSC with metallic components. By optimizing FO-WLP/eWLB packaging for MMICs in automotive radar applications, we can enable more efficient, reliable, and high-performance systems that make our roads safer and more efficient.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 11","pages":"2521-2530"},"PeriodicalIF":3.0,"publicationDate":"2025-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"145584637","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2025-08-22DOI: 10.1109/TCPMT.2025.3593032
{"title":"IEEE Transactions on Components, Packaging and Manufacturing Technology Publication Information","authors":"","doi":"10.1109/TCPMT.2025.3593032","DOIUrl":"https://doi.org/10.1109/TCPMT.2025.3593032","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 8","pages":"C2-C2"},"PeriodicalIF":3.0,"publicationDate":"2025-08-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=11134682","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"144891049","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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