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IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-03 DOI: 10.1109/TCPMT.2024.3521135
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引用次数: 0
TechRxiv: Share Your Preprint Research With the World! techxiv:与世界分享你的预印本研究!
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-03 DOI: 10.1109/TCPMT.2024.3521133
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引用次数: 0
Our Thanks to Reviewers IEEE Transactions on Components, Packaging and Manufacturing Technology 感谢IEEE元器件、封装与制造技术汇刊的审稿人
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-03 DOI: 10.1109/TCPMT.2024.3517192
{"title":"Our Thanks to Reviewers IEEE Transactions on Components, Packaging and Manufacturing Technology","authors":"","doi":"10.1109/TCPMT.2024.3517192","DOIUrl":"https://doi.org/10.1109/TCPMT.2024.3517192","url":null,"abstract":"","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"14 12","pages":"2147-2153"},"PeriodicalIF":2.3,"publicationDate":"2025-01-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10823080","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"142918472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"OA","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Foreword: Special Section on Multiphysics Aspects of Power Electronics Packaging—Power Die, Power Module, and Converter Level: Part 2 前言:电力电子封装的多物理场方面的特别部分-功率芯片,功率模块和转换器水平:第2部分
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-03 DOI: 10.1109/TCPMT.2024.3505652
Przemyslaw Gromala;Fang Luo;Sreekant Narumanchi
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引用次数: 0
IEEE Transactions on Components, Packaging and Manufacturing Technology Society Information IEEE元件、封装与制造技术学会汇刊
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-03 DOI: 10.1109/TCPMT.2024.3511828
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引用次数: 0
IEEE Open Access Publishing IEEE开放获取出版
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-03 DOI: 10.1109/TCPMT.2024.3521166
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引用次数: 0
TechRxiv: Share Your Preprint Research With the World! techxiv:与世界分享你的预印本研究!
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2025-01-03 DOI: 10.1109/TCPMT.2024.3521164
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引用次数: 0
Experimental Analysis on Reliability of Needle Electrodes in Ionic Wind
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-30 DOI: 10.1109/TCPMT.2024.3524430
Sambhav Prashit Kaphle;Anandaroop Bhattacharya
Electrohydrodynamic (EHD) cooling has gained prominence in recent years as a solid-state cooling technology due to lack of moving parts, low power consumption, silent operation, and superior thermal performance over passive cooling techniques. A common embodiment of such a cooling arrangement involves needles and finned heat sink acting as emitter and collector electrodes, respectively, to generate ionic wind. One of the major factors that affect the reliability of these air movers is the degradation of the needles over time. In this research, we have experimentally investigated the reliability of stainless-steel needles and characterized its performance over 60 cycles of operation. The results show considerable reduction in heat transfer as evidenced from the increase heat source temperature or thermal resistance. The cooling enhancement due to dc ionic wind dropped from a factor of 2.6–2.05. The surface of the needles was examined under a microscope and found to undergo oxidation, wear out, and micropitting when subjected to such repeated operations under high voltage. The degradation in thermal performance could be correlated to the change in the surface finish of the needles. The results point to the importance of ensuring the reliability of dc ionic winds produced under corona discharge for the cooling of electronic devices.
{"title":"Experimental Analysis on Reliability of Needle Electrodes in Ionic Wind","authors":"Sambhav Prashit Kaphle;Anandaroop Bhattacharya","doi":"10.1109/TCPMT.2024.3524430","DOIUrl":"https://doi.org/10.1109/TCPMT.2024.3524430","url":null,"abstract":"Electrohydrodynamic (EHD) cooling has gained prominence in recent years as a solid-state cooling technology due to lack of moving parts, low power consumption, silent operation, and superior thermal performance over passive cooling techniques. A common embodiment of such a cooling arrangement involves needles and finned heat sink acting as emitter and collector electrodes, respectively, to generate ionic wind. One of the major factors that affect the reliability of these air movers is the degradation of the needles over time. In this research, we have experimentally investigated the reliability of stainless-steel needles and characterized its performance over 60 cycles of operation. The results show considerable reduction in heat transfer as evidenced from the increase heat source temperature or thermal resistance. The cooling enhancement due to dc ionic wind dropped from a factor of 2.6–2.05. The surface of the needles was examined under a microscope and found to undergo oxidation, wear out, and micropitting when subjected to such repeated operations under high voltage. The degradation in thermal performance could be correlated to the change in the surface finish of the needles. The results point to the importance of ensuring the reliability of dc ionic winds produced under corona discharge for the cooling of electronic devices.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 2","pages":"428-431"},"PeriodicalIF":2.3,"publicationDate":"2024-12-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143446304","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Planar Multilayer Integrated Asymmetric MIMO Full-Digital Beamforming Array at 24.25–27.5 GHz
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-27 DOI: 10.1109/TCPMT.2024.3523638
Xian-Long Yang;Xiao-Wei Zhu;Yi Gong;Dong-Yi Huang
This article presents a planar multilayer integrated asymmetric multiple-input multiple-output (MIMO) full-digital beamforming (FDBF) array with “tile-type” at 24.25–27.5 GHz; 32-element transmitting (Tx) array and 16-element receiving (Rx) array are designed and integrated on ten-layer printed circuit board (PCB), in which multichannel up/down converter chips are assembled on top and bottom sides, respectively. The stacked-patch array antenna is divided into $2times 4$ subarray antennas and surface mounted on the feeding structure to simplify PCB design complexity. A miniaturized eighth-mode SIW cavity bandpass filter is proposed to provide out-of-band suppression for each radio frequency (RF) channel. To meet the antenna scanning characteristics, RF channels are spaced at $lambda $ /2 intervals at 25 GHz. These channels connect to the array antenna through a feeding structure, while the intermediate frequency (IF) ports are strategically arranged around the edge of the PCB board for convenient connection to the digital baseband. The proposed array operates within the frequency band of 24.25–27.5 GHz, offering a scanning coverage range of ±45° in both azimuth and elevation planes. The measured effective isotropic radiated power (EIRP) of the Tx array achieves 49 dBm at P1 dB. Moreover, the error vector magnitude (EVM) with the 5G NR FR2 400-MHz 64 QAM signal consistently remains below 3% across all scans at an EIRP of 39 dBm. This planar integrated beamforming array effectively addresses the challenge of accommodating a large number of ports in a full-digital MIMO array.
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引用次数: 0
Lumped Dual-Band Transformer With Chebyshev and Quasi-Elliptic Responses Based on GaAs-IPD
IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Pub Date : 2024-12-27 DOI: 10.1109/TCPMT.2024.3523326
Yu-Chen Wei;Cong Wang;Jing-Yang Gao;Fan-Yi Meng;Xiao-Long Wang;Yong-Le Wu;Nam-Young Kim
In this article, the design method of dual-band (DB) transformers with Chebyshev and quasi-elliptic responses has been proposed. This method not only enables arbitrary combinations of bandwidth and impedance transformation ratio but also achieves typical Chebyshev responses or conveniently introduces arbitrary transmission zeros (TZs) for quasi-elliptic responses, compared to conventional transformers. Ultra-compact lumped prototypes, fabricated using GaAs integrated passive device (IPD) technology, successfully realize DB Chebyshev transformer (DB-CT) and DB quasi-elliptic transformer (DB-QET) with impedance transformations from 10 to $50~Omega $ , operating at 2.25 and 3.1 GHz, respectively. The devices achieve a bandwidth of 22% in both operating bands, with minimum in-band insertion losses of 1.3 and 1.45 dB, respectively. Due to the lumped form and the introduced TZs of DB-QET, up to seventh-order harmonic suppression and rapid out-of-band attenuation can be observed. Additionally, the grounded-shielding metal fence (GSMF) structure added to the devices demonstrated excellent electromagnetic (EM) interference shielding performance. The simulated and measured results of the proposed devices exhibit good consistency.
{"title":"Lumped Dual-Band Transformer With Chebyshev and Quasi-Elliptic Responses Based on GaAs-IPD","authors":"Yu-Chen Wei;Cong Wang;Jing-Yang Gao;Fan-Yi Meng;Xiao-Long Wang;Yong-Le Wu;Nam-Young Kim","doi":"10.1109/TCPMT.2024.3523326","DOIUrl":"https://doi.org/10.1109/TCPMT.2024.3523326","url":null,"abstract":"In this article, the design method of dual-band (DB) transformers with Chebyshev and quasi-elliptic responses has been proposed. This method not only enables arbitrary combinations of bandwidth and impedance transformation ratio but also achieves typical Chebyshev responses or conveniently introduces arbitrary transmission zeros (TZs) for quasi-elliptic responses, compared to conventional transformers. Ultra-compact lumped prototypes, fabricated using GaAs integrated passive device (IPD) technology, successfully realize DB Chebyshev transformer (DB-CT) and DB quasi-elliptic transformer (DB-QET) with impedance transformations from 10 to <inline-formula> <tex-math>$50~Omega $ </tex-math></inline-formula>, operating at 2.25 and 3.1 GHz, respectively. The devices achieve a bandwidth of 22% in both operating bands, with minimum in-band insertion losses of 1.3 and 1.45 dB, respectively. Due to the lumped form and the introduced TZs of DB-QET, up to seventh-order harmonic suppression and rapid out-of-band attenuation can be observed. Additionally, the grounded-shielding metal fence (GSMF) structure added to the devices demonstrated excellent electromagnetic (EM) interference shielding performance. The simulated and measured results of the proposed devices exhibit good consistency.","PeriodicalId":13085,"journal":{"name":"IEEE Transactions on Components, Packaging and Manufacturing Technology","volume":"15 2","pages":"339-346"},"PeriodicalIF":2.3,"publicationDate":"2024-12-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"143446332","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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IEEE Transactions on Components, Packaging and Manufacturing Technology
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